CN102157616B - Wash solution for removing laser damage layers - Google Patents
Wash solution for removing laser damage layers Download PDFInfo
- Publication number
- CN102157616B CN102157616B CN2011100321920A CN201110032192A CN102157616B CN 102157616 B CN102157616 B CN 102157616B CN 2011100321920 A CN2011100321920 A CN 2011100321920A CN 201110032192 A CN201110032192 A CN 201110032192A CN 102157616 B CN102157616 B CN 102157616B
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- CN
- China
- Prior art keywords
- wash solution
- hydrofluoric acid
- solution
- laser damage
- ammonium fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 20
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- 239000006210 lotion Substances 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Weting (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
The invention relates to the manufacture technology of solar batteries, in particular to a wash solution for removing laser damage layers The wash solution comprises water, ammonium fluoride, hydrofluoric acid and nitric acid, wherein the wash solution is prepared by adding 60-80g of ammonium fluoride, 10-20ml of hydrofluoric acid solution and 10-20ml of nitric acid solution into 1L water and mixing the constituents; the wash solution related by the invention can effectively remove the oxides and most of metal elements on the surfaces of silicon slices, can reduce PN (positive and negative) node leakage currents (also called as reverse saturation current or space charge region leakage currents), so that opening voltages are increased.
Description
Technical field
The present invention relates to the solar cell manufacturing technology, especially a kind of washing lotion of going laser damage.
Background technology
At present, the laboratory extensively adopts SE (selective emitter junction) to prepare high-efficiency battery, and it heavily expands the contact that is conducive to positive Ag motor under the grid line of battery, reduced Rs; Gently expand in the active region simultaneously, reduced surface recombination, improved to open and pressed and short stream.Yet, adopting traditional SE method, silicon chip will pass through many pyroprocesses, easily introduces impurity in high temperature is crossed, and affects the quality of silicon chip, and finally causes the decline of efficient; And at present also commonly usedly be laser grooving and mix simultaneously, form the heavily expansion district of grid line, yet the damage layer that laser doping causes on the electrical property impact very large (there are some researches show that damage floor district is the gettering center) of silicon chip, directly causes the drops of opening of cell piece.
Summary of the invention
In order to overcome defects, the technical problem to be solved in the present invention is: for the problem of the damage layer in the existing cell silicon chip, provide a kind of cleaning fluid that cleans the damage layer.
In order to overcome the defective that exists in the background technology, the technical solution adopted for the present invention to solve the technical problems is: a kind of laser damage layer washing lotion of going, formed by water, ammonium fluoride, hydrofluoric acid and nitric acid, in 1L water, add 60-80g ammonium fluoride, 10-20ml hydrofluoric acid solution and 10-20ml salpeter solution and be mixed.
The mass concentration of described hydrofluoric acid solution is 49% in the present invention, and the mass concentration of described salpeter solution is 65%～68%, adopts such hybrid mode to be conducive to oxide and the most metallic element of the silicon of place to go silicon chip surface among the present invention.
Beneficial effect: adopt washing lotion of the present invention can effectively remove oxide and the most metallic element of the silicon of silicon chip surface, can reduce PN junction leakage current (being also referred to as reverse saturation current or space charge region leakage current), opening of making presses liter.
Embodiment
Embodiment one
The salpeter solution that adds 80g ammonium fluoride, 20ml 49% hydrofluoric acid solution and 20ml65% in the 1L water is mixed and made into laser damage layer washing lotion, and adopt this washing lotion to monocrystalline silicon piece (P type, resistivity is 0.5～3), through alkali making herbs into wool (pyramid), diffusion (SHR=70), rear cleaning (trimming edge PN junction and back-etching thereof), PECVD, front laser also mixes (ShR=5-10ohm), removes the damage layer, the Suns-Voc test.
Embodiment two
The salpeter solution that adds 60g ammonium fluoride, 10ml 49% hydrofluoric acid solution and 10ml68% in the 1L water is mixed and made into laser damage layer washing lotion, and adopt this washing lotion to monocrystalline silicon piece (P type, resistivity is 0.5～3), through alkali making herbs into wool (pyramid), diffusion (SHR=70), rear cleaning (trimming edge PN junction and back-etching thereof), PECVD, front laser also mixes (ShR=5-10ohm), removes the damage layer, the Suns-Voc test.
The test result of embodiment one and embodiment two such as following table
Test result is as follows:
This table shows that this removes to damage the damage layer that layer solution can be removed laser preferably, and so that the electrical property of cell piece has larger lifting.
Claims (2)
1. one kind is gone laser damage layer washing lotion, it is characterized in that: be comprised of water, ammonium fluoride, hydrofluoric acid and nitric acid, add 60-80g ammonium fluoride, 10-20ml hydrofluoric acid solution and 10-20ml salpeter solution and be mixed in 1L water.
2. the laser damage layer washing lotion of going as claimed in claim 1, it is characterized in that: the mass concentration of described hydrofluoric acid solution is 49%, the mass concentration of described salpeter solution is 65%～68%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100321920A CN102157616B (en) | 2011-01-29 | 2011-01-29 | Wash solution for removing laser damage layers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011100321920A CN102157616B (en) | 2011-01-29 | 2011-01-29 | Wash solution for removing laser damage layers |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102157616A CN102157616A (en) | 2011-08-17 |
| CN102157616B true CN102157616B (en) | 2013-03-27 |
Family
ID=44438939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100321920A Active CN102157616B (en) | 2011-01-29 | 2011-01-29 | Wash solution for removing laser damage layers |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102157616B (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103296144A (en) * | 2013-06-17 | 2013-09-11 | 奥特斯维能源（太仓）有限公司 | Method for improving laser-induced damage of laser-doping SE (selective emitter) cell |
| CN104745195A (en) * | 2013-12-31 | 2015-07-01 | 苏州同冠微电子有限公司 | Dyeing solution for PN junction of VDMOS and application method thereof |
| CN105274626B (en) * | 2015-10-10 | 2017-12-01 | 浙江晶科能源有限公司 | A kind for the treatment of fluid and processing method for being used to optimize black silicon face structure |
| CN106711281A (en) * | 2016-12-13 | 2017-05-24 | 广东爱康太阳能科技有限公司 | Crystalline silicon cell manufacturing method |
| CN113506724B (en) * | 2021-07-05 | 2022-07-01 | 扬州虹扬科技发展有限公司 | Method for treating GPP silicon wafer before nickel plating |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| CN101705096A (en) * | 2009-11-06 | 2010-05-12 | 电子科技大学 | Etching solution for use in wet etching of bismuth-based thin films |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06338489A (en) * | 1993-05-28 | 1994-12-06 | Fuji Xerox Co Ltd | Method of manufacturing metal film |
| KR100734274B1 (en) * | 2005-09-05 | 2007-07-02 | 삼성전자주식회사 | Method of forming gate using the cleaning composition |
-
2011
- 2011-01-29 CN CN2011100321920A patent/CN102157616B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
| CN101705096A (en) * | 2009-11-06 | 2010-05-12 | 电子科技大学 | Etching solution for use in wet etching of bismuth-based thin films |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102157616A (en) | 2011-08-17 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
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| CP01 | Change in the name or title of a patent holder | ||
| CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
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| CP03 | Change of name, title or address |