CN102157616B - Wash solution for removing laser damage layers - Google Patents
Wash solution for removing laser damage layers Download PDFInfo
- Publication number
- CN102157616B CN102157616B CN2011100321920A CN201110032192A CN102157616B CN 102157616 B CN102157616 B CN 102157616B CN 2011100321920 A CN2011100321920 A CN 2011100321920A CN 201110032192 A CN201110032192 A CN 201110032192A CN 102157616 B CN102157616 B CN 102157616B
- Authority
- CN
- China
- Prior art keywords
- wash solution
- hydrofluoric acid
- solution
- laser damage
- ammonium fluoride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 20
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 8
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 4
- 239000006210 lotion Substances 0.000 claims description 10
- 238000005406 washing Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 9
- 229910052710 silicon Inorganic materials 0.000 abstract description 9
- 239000010703 silicon Substances 0.000 abstract description 9
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 239000000470 constituent Substances 0.000 abstract 1
- 238000004140 cleaning Methods 0.000 description 3
- 239000003513 alkali Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000009966 trimming Methods 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Weting (AREA)
- Battery Electrode And Active Subsutance (AREA)
Abstract
Description
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011100321920A CN102157616B (en) | 2011-01-29 | 2011-01-29 | Wash solution for removing laser damage layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2011100321920A CN102157616B (en) | 2011-01-29 | 2011-01-29 | Wash solution for removing laser damage layers |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102157616A CN102157616A (en) | 2011-08-17 |
CN102157616B true CN102157616B (en) | 2013-03-27 |
Family
ID=44438939
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2011100321920A Active CN102157616B (en) | 2011-01-29 | 2011-01-29 | Wash solution for removing laser damage layers |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN102157616B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103296144A (en) * | 2013-06-17 | 2013-09-11 | 奥特斯维能源(太仓)有限公司 | Method for improving laser-induced damage of laser-doping SE (selective emitter) cell |
CN104745195A (en) * | 2013-12-31 | 2015-07-01 | 苏州同冠微电子有限公司 | Dyeing solution for PN junction of VDMOS and application method thereof |
CN105274626B (en) * | 2015-10-10 | 2017-12-01 | 浙江晶科能源有限公司 | A kind for the treatment of fluid and processing method for being used to optimize black silicon face structure |
CN106711281A (en) * | 2016-12-13 | 2017-05-24 | 广东爱康太阳能科技有限公司 | Crystalline silicon cell manufacturing method |
CN113506724B (en) * | 2021-07-05 | 2022-07-01 | 扬州虹扬科技发展有限公司 | Method for treating GPP silicon wafer before nickel plating |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
CN101705096A (en) * | 2009-11-06 | 2010-05-12 | 电子科技大学 | Etching solution for use in wet etching of bismuth-based thin films |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338489A (en) * | 1993-05-28 | 1994-12-06 | Fuji Xerox Co Ltd | Method of manufacturing metal film |
KR100734274B1 (en) * | 2005-09-05 | 2007-07-02 | 삼성전자주식회사 | Method of forming gate using the cleaning composition |
-
2011
- 2011-01-29 CN CN2011100321920A patent/CN102157616B/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1334312A (en) * | 2000-07-25 | 2002-02-06 | 关东化学株式会社 | Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution |
CN101705096A (en) * | 2009-11-06 | 2010-05-12 | 电子科技大学 | Etching solution for use in wet etching of bismuth-based thin films |
Also Published As
Publication number | Publication date |
---|---|
CN102157616A (en) | 2011-08-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: TRINASOLAR Co.,Ltd. Address before: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee before: trina solar Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP03 | Change of name, title or address |
Address after: Solar photovoltaic industry park Tianhe Road 213031 north of Jiangsu Province, Changzhou City, No. 2 Patentee after: trina solar Ltd. Address before: 213031, No. 2, Tianhe Road, Xinbei Industrial Park, Jiangsu, Changzhou Patentee before: CHANGZHOU TRINA SOLAR ENERGY Co.,Ltd. |
|
CP03 | Change of name, title or address |