CN203707126U - 一种新型陶瓷cob封装结构 - Google Patents
一种新型陶瓷cob封装结构 Download PDFInfo
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- CN203707126U CN203707126U CN201420023221.6U CN201420023221U CN203707126U CN 203707126 U CN203707126 U CN 203707126U CN 201420023221 U CN201420023221 U CN 201420023221U CN 203707126 U CN203707126 U CN 203707126U
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- 239000000919 ceramic Substances 0.000 title claims abstract description 65
- 238000004806 packaging method and process Methods 0.000 title abstract 4
- 239000000758 substrate Substances 0.000 claims abstract description 47
- 239000000853 adhesive Substances 0.000 claims abstract description 5
- 230000001070 adhesive effect Effects 0.000 claims abstract description 5
- 239000000084 colloidal system Substances 0.000 claims description 6
- 238000012856 packing Methods 0.000 claims description 6
- 241000218202 Coptis Species 0.000 claims description 3
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 6
- 239000003292 glue Substances 0.000 abstract 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 238000007789 sealing Methods 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000004313 glare Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
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Abstract
本实用新型公开了一种新型陶瓷COB封装结构，包括陶瓷基板，所述陶瓷基板上集成具有抗高压保护电路，所述陶瓷基板上设有通过固晶胶固定在陶瓷基板上的发光晶片，所述发光晶片和陶瓷基板之间使用金线连接，所述陶瓷基板上设有用于密封保护所述发光晶片的封装胶体，所述封装胶体覆盖在发光晶片上部。本实用新型是一种低热阻、高导热、耐高压、出光均匀、无眩光的新型陶瓷COB封装结构。
Description
技术领域
本发明涉及一种COB封装结构，尤其涉及一种低热阻、高导热、耐高压、出光均匀的新型的陶瓷COB封装结构。
背景技术
LED（发光二极管）应用非常广泛，由于现有技术提供的白光SMD（表面贴装型，SurfaceMountedDevices）热阻大，并且散热性差，热量没有及时散出来，功率小只能应用于对产品性能要求不高的照明领域，LED光源分立器件→MCPCB光源模组→LED灯具，没有现成合适的核心光源组件而采取的做法，不但耗工费时，而且成本较高。COB封装将“LED光源分立器件→MCPCB光源模组”合二为一，直接将LED灯具集成在MCPCB上做成COB光源模块，走“COB光源模块→LED灯具”的路线，不但省工省时，而且可以节省器件封装的成本，但是现在的COB封装技术普遍存在LED灯珠色光不均，眩光或抗高压性能不佳等问题。
实用新型内容
本实用新型的目的在于针对已有技术方案的不足，提供一种抗高压、散热好、色光均匀、无眩光的新型陶瓷COB封装结构。
为实现上述目的，本实用新型提供的技术方案为：提供一种新型陶瓷COB封装结构，包括陶瓷基板,所述陶瓷基板上集成具有抗高压保护电路，所述陶瓷基板上设有通过固晶胶固定在陶瓷基板上的发光晶片，所述发光晶片和陶瓷基板之间使用金线连接，所述陶瓷基板上设有用于密封保护所述发光晶片的封装胶体，所述封装胶体覆盖在发光晶片上部。
所述发光晶片为蓝色晶片。
所述陶瓷基板的表面镀有银膜。
所述陶瓷基板的长度为13.5毫米，宽度为13.5毫米。
所述陶瓷基板的两端具有正负极连接线。
本实用新型的有益效果在于，所述陶瓷基板具有优良电绝缘性能，高可靠性，陶瓷平面光源的陶瓷基板为高温烧结银涂层，将芯片直接安装到陶瓷基板上，热量直接在陶瓷基板上传导，散热快，具有高导热特性，表提高出光效率，整个COB封装结构耐高压、出光均匀、无眩光，极大满足了人们的品质生活。
附图说明
图1为本实用新型实施例的结构示意图；
图2为本实用新型实施例陶瓷基板的结构示意图。
具体实施方式
为了使本实用新型的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本实用新型进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本实用新型，并不用于限定本实用新型。
参考图1-2所示，本实用新型实施例提供了一种新型陶瓷COB封装结构，包括陶瓷基板105,所述陶瓷基板105上集成具有抗高压保护电路106，所述陶瓷基板105上设有通过固晶胶102固定在陶瓷基板105上的发光晶片101，所述发光晶片101和陶瓷基板105之间使用金线103连接，所述陶瓷基板105上设有用于密封保护所述发光晶片101的封装胶体104，所述封装胶体104覆盖在发光晶片101上部。
其中，所述发光晶片101为蓝色晶片，所述陶瓷基板105的表面镀有银膜。
如图2所示，所述陶瓷基板105的长度为13.5毫米，宽度为13.5毫米，所述陶瓷基板105的两端具有正负极连接线107。
所述陶瓷基板105是指银层在高温下直接键合到氧化铝(AL2Q3)或氮化铝(ALN)陶瓷基片表面上的特殊工艺板，所制成的超薄复合基板具有优良电绝缘性能，高可靠性，高导热特性，优异的软钎焊性和高的附着强度，陶瓷基板耐高压4000V，安全性好，匹配高压低电流电源。
所述陶瓷基板表面按光学设计采用高折射率的材料，表面镀银，提高出光效率，获得较高的光通量和光电转换效率，出光面宽，发光效率高。
所述陶瓷基板采用灵活的电路设计，灵活性比较强，可承载高电压，可以根据需要串联任意个数的LED以得到所需的伏安特性，也可以进行串并联得到更为灵活的特性。
所述陶瓷基板平面光源模板可靠性高，陶瓷和芯片都是AL203氧化铝材料，膨胀系数相近，不会因温度变化引起晶粒开焊，导致衰减与死灯，保证了芯片的稳定性。相比贴片SMD的LED灯，SMD封装在进行贴片的时候，需要过回流焊，其高温对晶片造成很大伤害，然而陶瓷COB封装不需要回流焊，也不需要购买贴片机和焊接等设备，省去了器件工序，不仅降低了应用企业的门槛，同时可大幅度下降成本。
整个陶瓷COB封装结构，热阻低，陶瓷平面光源的陶瓷基板为高温烧结银涂层，将芯片直接安装到陶瓷基板上，热量直接在陶瓷基板上传导，散热快，比之发光二极管安装在铝基板上制作LED灯可免去器件结构热阻和器件与铝基板的接触热阻，有利于降低PN结温度。由于整个COB面光源是整面封装，无需做防眩光处理，先进的工艺完美的解决了led灯珠色光不均的问题，整面出光，光照均匀光效好。
结合图1和图2，本实用新型所述陶瓷基板具有优良电绝缘性能，高可靠性，高导热特性，表面镀有银膜，提高出光效率，整个COB封装结构耐高压、出光均匀、无眩光，极大满足了人们的品质生活。
以上所述，仅为本实用新型较佳的具体实施方式，但本实用新型的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本实用新型揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本实用新型的保护范围之内。因此，本实用新型的保护范围应该以权利要求的保护范围为准。
Claims (5)
1.一种新型陶瓷COB封装结构，其特征在于，包括陶瓷基板,所述陶瓷基板上集成具有抗高压保护电路，所述陶瓷基板上设有通过固晶胶固定在陶瓷基板上的多个发光晶片，所述发光晶片和陶瓷基板之间使用金线连接，所述陶瓷基板上设有用于密封保护所述发光晶片的封装胶体，所述封装胶体覆盖在发光晶片上部。
2.如权利要求1所述的一种新型陶瓷COB封装结构，其特征在于，所述发光晶片为蓝色晶片。
3.如权利要求1所述的一种新型陶瓷COB封装结构，其特征在于，所述陶瓷基板的表面镀有银膜。
4.如权利要求1所述的一种新型陶瓷COB封装结构，其特征在于，所述陶瓷基板的长度为13.5毫米，宽度为13.5毫米。
5.如权利要求1所述的一种新型陶瓷COB封装结构，其特征在于，所述陶瓷基板的两端具有正负极连接线。
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405933A (zh) * | 2014-09-09 | 2016-03-16 | 无锡华润华晶微电子有限公司 | 一种led晶片粘合方法 |
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2014
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105405933A (zh) * | 2014-09-09 | 2016-03-16 | 无锡华润华晶微电子有限公司 | 一种led晶片粘合方法 |
| CN105405933B (zh) * | 2014-09-09 | 2018-01-26 | 无锡华润华晶微电子有限公司 | 一种led晶片粘合方法 |
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