CN203657947U - Electrostatic chuck basic performance detection apparatus - Google Patents
Electrostatic chuck basic performance detection apparatus Download PDFInfo
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- CN203657947U CN203657947U CN201320800730.0U CN201320800730U CN203657947U CN 203657947 U CN203657947 U CN 203657947U CN 201320800730 U CN201320800730 U CN 201320800730U CN 203657947 U CN203657947 U CN 203657947U
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- vacuum chamber
- electrostatic chuck
- vacuum
- pulling force
- wafer
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Abstract
The utility model discloses an electrostatic chuck basic performance detection apparatus in the field of integrated circuit manufacturing. The apparatus is composed of a driving device, a transmission device, a tension sensor, a temperature measuring device, an electrostatic chuck, a vacuum cavity, a vacuum obtaining device and a data acquisition system. The apparatus is integrated with three functions including electrostatic force size measurement, wafer desorption time measurement and wafer surface temperature measurement; the principle is simple, the structure is compact, and space can be effectively saved; the adaptability is wide, the apparatus can be applied to a plasma environment, and the sealing property of the vacuum cavity can be effectively ensured; and the operation is convenient, wafer deformation and damage are not caused, and the measuring precision is high.
Description
Technical field
The utility model belongs to integrated circuit and manufactures field, relates in particular to a kind of electrostatic chuck key property pick-up unit.
Background technology
In the current process of manufacturing at integrated circuit (IC), extensively adopt electrostatic chuck equipment, electrostatic chuck utilize electrostatic absorption principle by wafer adsorption to be processed on its surface, and can control the temperature of crystal column surface by back of the body blowing.It is placed on vacuum technology cavity bottom conventionally, generally comprise pedestal and the dielectric layer above pedestal, wafer is placed on the dielectric layer of being made up of the good pottery of thermal conductivity, give the electrode access being embedded in dielectric layer direct supply, dielectric layer surface can produce polarization charge, and then generate different in nature polarization charge in the relevant position of crystal column surface, by this Coulomb force forming between dielectric layer and wafer or J-R power, wafer is firmly absorbed and fixed on electrostatic chuck.Simultaneously, in electrostatic chuck, pass into inert gas as helium, make it evenly spread to electrostatic chuck upper surface, utilize the helium back of the body to blow the heat interchange that realizes wafer and electrostatic chuck, by the recirculated cooling water of electrostatic chuck inside, heat is taken away again, finally played the object that regulates wafer temperature.On the other hand, wafer is after machining, need to remove in time adsorbed state (desorption), generally when disconnecting after direct supply, due to the existence of residual charge, electrostatic force can not disappear at once, if now wafer is by thimble jack-up or captured by mechanical arm, be easy to break, therefore desorption time should be as far as possible short.
Therefore, the Electrostatic Absorption power of electrostatic chuck, wafer desorption time and wafer temperature become the important performance index of electrostatic chuck.Electrostatic force is too small, can not balance carry on the back blowing pressure, cannot fix wafer; Electrostatic force is excessive, has extended first desorption time, and production efficiency is reduced, and second blows and exerts an influence filling helium in wafer and the electrostatic chuck gap back of the body, and remote effect arrive the temperature control effect to wafer.And technological process is very strict to the requirement of wafer temperature, temperature height and homogeneity thereof are directly connected to final crudy and the yields of product.So, determine exactly electrostatic force size, wafer desorption time and the wafer temperature distribution situation of electrostatic chuck, just seem very necessary.
Existing pick-up unit generally adopts the mode that lifts straight up wafer to carry out static force measurement, but because wafer area is larger, there is the local phenomenon of desorption in advance often lifting in process unbalance stress, be difficult to ensure evenly desorption of wafer entirety, not only can make measuring error increase, also easily cause wafer distortion even to break.Meanwhile, the drive disk assembly of wafer top has blocked a part of active area of vacuum chamber applying plasma, and the sheath layer that has affected wafer top distributes, and also can strengthen measuring error.In addition, drive disk assembly and chamber upper wall are generally motive seal mode, and sealing effectiveness often can not meet the requirement of chamber condition of high vacuum degree.Further, existing pick-up unit is measurement of electrostatic absorption affinity, wafer desorption time and these three key property indexs of wafer temperature simultaneously, and range of application has larger limitation.
Summary of the invention
, easy damaged wafer large for the existing electrostatic chuck pick-up unit measuring error of mentioning in background technology, cavity seal be not good, cannot be applied to the deficiencies such as plasma environment, the utility model proposes a kind of electrostatic chuck key property pick-up unit.
A kind of electrostatic chuck key property pick-up unit, is characterized in that, described device comprises that drive unit, gearing, pulling force sensor, electrostatic chuck, vacuum chamber, vacuum obtain device, temperature measuring equipment and data acquisition system (DAS); Described drive unit comprises air pump, cylinder and air control unit; Described air control unit comprises pressure control valve, flowrate control valve and directional control valve;
Wherein, described air pump is placed in outside vacuum chamber, is fixed on experiment table top, and two tracheaes of air pump pass from the sidewall of vacuum chamber, are connected with the corresponding interface on cylinder; Described cylinder is fixed on the base of vacuum chamber inside; Piston rod and the pulling force sensor of described cylinder are connected; Described pressure control valve, flowrate control valve and directional control valve are arranged on the pipeline between air pump and cylinder;
Described gearing, pulling force sensor and electrostatic chuck are installed in vacuum chamber; Described gearing is connected with wafer with described pulling force sensor respectively; Described electrostatic chuck is arranged on chamber bottom;
Described vacuum obtains device and is positioned at vacuum chamber below, is connected with the vacuum pumping hole of chamber bottom by ring flange; Described vacuum obtains device and comprises mechanical pump and molecular pump;
Described temperature measuring equipment is positioned at outside vacuum chamber; Described temperature measuring equipment comprises infrared thermometer and infrared thermometer support, and infrared thermometer is fixed on infrared thermometer support, and infrared thermometer support is installed on experiment table;
Described data acquisition system (DAS) is connected with the cable of pulling force sensor and temperature measuring equipment respectively by general fast interface.
Described drive unit also comprises sealing block and air cylinder support; Between two tracheaes of described air pump and vacuum chamber sidewall, realize static seal by sealing block; Described cylinder is fixed on the base of vacuum chamber inside by air cylinder support.
Described gearing comprises contiguous block and Bonded Ring; Outrigger shaft and the pulling force sensor of described contiguous block are connected, and contiguous block is connected and fixed by bolt and Bonded Ring; Described Bonded Ring comprises Bonded Ring and lower Bonded Ring two parts, by the mode of uniform gluing, respectively with a section of one section of top surface edge, side and one section of bonding of lower surface edge of wafer.
Described vacuum chamber comprises upper cover plate, vacuum meter, remote plasma input port, view window, temperature acquisition window and cable pipeline transmit port; Wherein, between described upper cover plate and vacuum chamber body, by the opening and closing of clip control upper cover plate, between upper cover plate and vacuum chamber body, realize static seal by O-ring seal; Described vacuum meter is arranged on vacuum chamber exterior side wall; Described remote plasma input port is positioned at the central authorities of upper cover plate; Described view window is positioned at vacuum chamber sidewall; Described temperature acquisition window is installed on vacuum chamber sidewall; Described cable pipeline transmit port is positioned at chamber bottom.
Described O-ring seal adopts O RunddichtringO.
The back of the body blowing pipeline of the data line of described pulling force sensor, the power cable of electrostatic chuck and electrostatic chuck is drawn from cable pipeline transmit port.
The beneficial effects of the utility model are:
1. this electrostatic chuck pick-up unit has been realized the comprehensive integration of three functions such as the measurement of electrostatic force size, the measurement of wafer desorption time and wafer surface temperature measurement;
2. this electrostatic chuck pick-up unit principle is simple, easy to operate, measuring accuracy is high;
3. the cylinder piston throw of lever in this electrostatic chuck pick-up unit is very little, thereby compact conformation, can effectively save space;
4. this electrostatic chuck pick-up unit has avoided existing upwards pull-type pick-up unit to block the plasma of wafer top, can be applicable in plasma environment;
5. all sealings of this electrostatic chuck pick-up unit position is static seal, has overcome existing pick-up unit because the cavity seal that running part adopts motive seal to bring is difficult to meet the requirements of drawback;
6. this electrostatic chuck pick-up unit has been eliminated existing detection method and has easily been caused wafer distortion or cracked possibility, and it is smooth that whole measuring process wafer keeps.
Brief description of the drawings
The electrostatic chuck pick-up unit external structure schematic diagram that Fig. 1 provides for the utility model;
The electrostatic chuck pick-up unit inner structure schematic diagram that Fig. 2 provides for the utility model;
The driving of electrostatic chuck pick-up unit and gearing schematic diagram that Fig. 3 provides for the utility model;
Wherein, 1-upper cover plate; 2-clip; 3-sealing block; 4-tracheae; 5-air pump; 6-view window; 7-molecular pump; 8-mechanical pump; 9-experiment table; 10-infrared thermometer support; 11-infrared thermometer; 12-temperature acquisition window; 13-remote plasma input port; 14-wafer; 15-cylinder; 16-air cylinder support; 17-cable pipeline transmit port; 18-vacuum pumping hole; 19-electrostatic chuck; 20-vacuum meter; 21-Bonded Ring; 22-pulling force sensor; The piston rod of 23-cylinder; 24-contiguous block.
Embodiment
Below in conjunction with accompanying drawing, preferred embodiment is elaborated.Should be emphasized that following explanation is only exemplary, instead of in order to limit scope of the present utility model and application thereof.
Electrostatic chuck pick-up unit external structure schematic diagram, electrostatic chuck pick-up unit inner structure schematic diagram, electrostatic chuck pick-up unit that Fig. 1～Fig. 3 is respectively the utility model to be provided drive and gearing schematic diagram.A kind of electrostatic chuck key property pick-up unit, is characterized in that, described device comprises that drive unit, gearing, pulling force sensor, electrostatic chuck, vacuum chamber, vacuum obtain device, temperature measuring equipment and data acquisition system (DAS); Described drive unit comprises air pump 5, cylinder 15 and air control unit; Described air control unit comprises pressure control valve, flowrate control valve and directional control valve;
Wherein, described air pump 5 is placed in outside vacuum chamber, is fixed on 9 of experiment tablees upper, and two tracheaes 4 of air pump 5 pass from the sidewall of vacuum chamber, are connected with the corresponding interface on cylinder 5; Described cylinder 5 is fixed on the base of vacuum chamber inside; Piston rod 23 and the pulling force sensor 22 of described cylinder are connected; Described pressure control valve, flowrate control valve and directional control valve are arranged on the pipeline between air pump and cylinder;
Described gearing, pulling force sensor 22 and electrostatic chuck 19 are installed in vacuum chamber; Described gearing is connected with wafer 14 with described pulling force sensor 22 respectively; Described electrostatic chuck 19 is arranged on chamber bottom;
Described vacuum obtains device and is positioned at vacuum chamber below, is connected with the vacuum pumping hole 18 of chamber bottom by ring flange; Described vacuum obtains device and comprises mechanical pump 8 and molecular pump 7;
Described temperature measuring equipment is positioned at outside vacuum chamber; Described temperature measuring equipment comprises infrared thermometer 11 and infrared thermometer support 10, and infrared thermometer 11 is fixed on infrared thermometer support 10, and infrared thermometer support 10 is installed on experiment table;
Described data acquisition system (DAS) is connected with the cable of pulling force sensor 22 and temperature measuring equipment respectively by general fast interface, for Real-time Collection and the pulling force size and the Temperature numerical that read pulling force sensor and temperature measuring equipment.
Described drive unit also comprises sealing block 3 and air cylinder support 16; Between two tracheaes 4 of described air pump 5 and vacuum chamber sidewall, realize static seal by sealing block 3; Described cylinder 5 is fixed on the base of vacuum chamber inside by air cylinder support 16.
Described gearing comprises contiguous block 24 and Bonded Ring 21; The outrigger shaft of described contiguous block 24 and pulling force sensor 22 are connected, and contiguous block 24 is connected and fixed by bolt and Bonded Ring 21; Described Bonded Ring 21 comprises Bonded Ring and lower Bonded Ring two parts, by the mode of uniform gluing, respectively with a section of one section of top surface edge, side and one section of bonding of lower surface edge of wafer 14; The output pulling force of drive unit is spread out on wafer 14, avoid wafer 14 local pressures excessive and damaged.
Described vacuum chamber comprises upper cover plate 1, vacuum meter 20, remote plasma input port 13, view window 6, temperature acquisition window 12 and cable pipeline transmit port 17; Wherein, between described upper cover plate 1 and vacuum chamber body, control the quick opening and closing of upper cover plate 1 by clip 2, between upper cover plate 1 and vacuum chamber body, realize static seal by O RunddichtringO; Described vacuum meter 20 is arranged on vacuum chamber exterior side wall, for the vacuum tightness in Real-Time Monitoring chamber; Described remote plasma input port 13 is positioned at the central authorities of upper cover plate 1; Be conducive to plasma and be full of fast, equably whole chamber; Described view window 6 is positioned at vacuum chamber sidewall; Described temperature acquisition window 12 is installed on vacuum chamber sidewall, realizes temperature measuring equipment and by this window, the surperficial each point Temperature numerical of wafer 14 is gathered and read; Described cable pipeline transmit port 13 is positioned at chamber bottom.
The back of the body blowing pipeline of the data line of described pulling force sensor 22, the power cable of electrostatic chuck 19 and electrostatic chuck 19 is drawn from cable pipeline transmit port 13.
The above; it is only preferably embodiment of the utility model; but protection domain of the present utility model is not limited to this; any be familiar with those skilled in the art the utility model disclose technical scope in; the variation that can expect easily or replacement, within all should being encompassed in protection domain of the present utility model.Therefore, protection domain of the present utility model should be as the criterion with the protection domain of claim.
Claims (6)
1. an electrostatic chuck key property pick-up unit, is characterized in that, described device comprises that drive unit, gearing, pulling force sensor, electrostatic chuck, vacuum chamber, vacuum obtain device, temperature measuring equipment and data acquisition system (DAS); Described drive unit comprises air pump, cylinder and pneumatic control transposition; Described air control unit comprises pressure control valve, flowrate control valve and directional control valve;
Wherein, described air pump is placed in outside vacuum chamber, is fixed on experiment table top, and two tracheaes of air pump pass from the sidewall of vacuum chamber, are connected with the corresponding interface on cylinder; Described cylinder is fixed on the base of vacuum chamber inside; Piston rod and the pulling force sensor of described cylinder are connected; Described pressure control valve, flowrate control valve and directional control valve are arranged on the pipeline between air pump and cylinder;
Described gearing, pulling force sensor and electrostatic chuck are installed in vacuum chamber; Described gearing is connected with wafer with described pulling force sensor respectively; Described electrostatic chuck is arranged on chamber bottom;
Described vacuum obtains device and is positioned at vacuum chamber below, is connected with the vacuum pumping hole of chamber bottom by ring flange; Described vacuum obtains device and comprises mechanical pump and molecular pump;
Described temperature measuring equipment is positioned at outside vacuum chamber; Described temperature measuring equipment comprises infrared thermometer and infrared thermometer support, and infrared thermometer is fixed on infrared thermometer support, and infrared thermometer support is installed on experiment table;
Described data acquisition system (DAS) is connected with the cable of pulling force sensor and temperature measuring equipment respectively by general fast interface.
2. device according to claim 1, is characterized in that, described drive unit also comprises sealing block and air cylinder support; Between two tracheaes of described air pump and vacuum chamber sidewall, realize static seal by sealing block; Described cylinder is fixed on the base of vacuum chamber inside by air cylinder support.
3. device according to claim 1, is characterized in that, described gearing comprises contiguous block and Bonded Ring; Outrigger shaft and the pulling force sensor of described contiguous block are connected, and contiguous block is connected and fixed by bolt and Bonded Ring; Described Bonded Ring comprises Bonded Ring and lower Bonded Ring two parts, by the mode of uniform gluing, respectively with a section of one section of top surface edge, side and one section of bonding of lower surface edge of wafer.
4. device according to claim 1, is characterized in that, described vacuum chamber comprises upper cover plate, vacuum meter, remote plasma input port, view window, temperature acquisition window and cable pipeline transmit port; Wherein, between described upper cover plate and vacuum chamber body, by the opening and closing of clip control upper cover plate, between upper cover plate and vacuum chamber body, realize static seal by O-ring seal; Described vacuum meter is arranged on vacuum chamber exterior side wall; Described remote plasma input port is positioned at the central authorities of upper cover plate; Described view window is positioned at vacuum chamber sidewall; Described temperature acquisition window is installed on vacuum chamber sidewall; Described cable pipeline transmit port is positioned at chamber bottom.
5. device according to claim 4, is characterized in that, described O-ring seal adopts O RunddichtringO.
6. device according to claim 4, is characterized in that, the back of the body blowing pipeline of the data line of described pulling force sensor, the power cable of electrostatic chuck and electrostatic chuck is drawn from cable pipeline transmit port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320800730.0U CN203657947U (en) | 2013-12-06 | 2013-12-06 | Electrostatic chuck basic performance detection apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320800730.0U CN203657947U (en) | 2013-12-06 | 2013-12-06 | Electrostatic chuck basic performance detection apparatus |
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| Publication Number | Publication Date |
|---|---|
| CN203657947U true CN203657947U (en) | 2014-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320800730.0U Withdrawn - After Issue CN203657947U (en) | 2013-12-06 | 2013-12-06 | Electrostatic chuck basic performance detection apparatus |
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| CN (1) | CN203657947U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103698068A (en) * | 2013-12-06 | 2014-04-02 | 清华大学 | Electrostatic chuck basic performance detection device and detection method thereof |
| CN104062040A (en) * | 2014-07-08 | 2014-09-24 | 北京华卓精科科技有限公司 | Device for measuring electrostatic adsorption force of electrostatic chuck |
| CN105241599A (en) * | 2015-11-05 | 2016-01-13 | 清华大学 | Detection system and detection method for electrostatic force of electrostatic chuck |
-
2013
- 2013-12-06 CN CN201320800730.0U patent/CN203657947U/en not_active Withdrawn - After Issue
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103698068A (en) * | 2013-12-06 | 2014-04-02 | 清华大学 | Electrostatic chuck basic performance detection device and detection method thereof |
| CN103698068B (en) * | 2013-12-06 | 2014-11-12 | 清华大学 | Electrostatic chuck basic performance detection device and detection method thereof |
| CN104062040A (en) * | 2014-07-08 | 2014-09-24 | 北京华卓精科科技有限公司 | Device for measuring electrostatic adsorption force of electrostatic chuck |
| CN104062040B (en) * | 2014-07-08 | 2016-08-24 | 北京华卓精科科技股份有限公司 | The measurement apparatus of electrostatic chuck electrostatic adsorption force |
| CN105241599A (en) * | 2015-11-05 | 2016-01-13 | 清华大学 | Detection system and detection method for electrostatic force of electrostatic chuck |
| CN105241599B (en) * | 2015-11-05 | 2017-09-22 | 清华大学 | The detecting system and detection method of electrostatic chuck electrostatic force |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20140618 Effective date of abandoning: 20141112 |
|
| RGAV | Abandon patent right to avoid regrant |