CN203630072U - Semiconductor gas sensor - Google Patents
Semiconductor gas sensor Download PDFInfo
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- CN203630072U CN203630072U CN201320818836.3U CN201320818836U CN203630072U CN 203630072 U CN203630072 U CN 203630072U CN 201320818836 U CN201320818836 U CN 201320818836U CN 203630072 U CN203630072 U CN 203630072U
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 136
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims description 7
- 150000004706 metal oxides Chemical class 0.000 claims description 7
- 229910000914 Mn alloy Inorganic materials 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 230000007423 decrease Effects 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical group O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 3
- 229910000925 Cd alloy Inorganic materials 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims description 3
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 3
- QVYYOKWPCQYKEY-UHFFFAOYSA-N [Fe].[Co] Chemical compound [Fe].[Co] QVYYOKWPCQYKEY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- OJIJEKBXJYRIBZ-UHFFFAOYSA-N cadmium nickel Chemical compound [Ni].[Cd] OJIJEKBXJYRIBZ-UHFFFAOYSA-N 0.000 claims description 3
- WBLJAACUUGHPMU-UHFFFAOYSA-N copper platinum Chemical compound [Cu].[Pt] WBLJAACUUGHPMU-UHFFFAOYSA-N 0.000 claims description 3
- TVZPLCNGKSPOJA-UHFFFAOYSA-N copper zinc Chemical compound [Cu].[Zn] TVZPLCNGKSPOJA-UHFFFAOYSA-N 0.000 claims description 3
- 239000002346 layers by function Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 2
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 239000002041 carbon nanotube Substances 0.000 description 15
- 229910021393 carbon nanotube Inorganic materials 0.000 description 15
- 239000000463 material Substances 0.000 description 13
- 230000006872 improvement Effects 0.000 description 9
- 229910000480 nickel oxide Inorganic materials 0.000 description 9
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 9
- 238000000034 method Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004088 simulation Methods 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BFDHFSHZJLFAMC-UHFFFAOYSA-L nickel(ii) hydroxide Chemical compound [OH-].[OH-].[Ni+2] BFDHFSHZJLFAMC-UHFFFAOYSA-L 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000010944 silver (metal) Substances 0.000 description 2
- 231100000331 toxic Toxicity 0.000 description 2
- 230000002588 toxic effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000004880 explosion Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000003211 malignant effect Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
The utility model discloses a semiconductor gas sensor. The semiconductor gas sensor comprises a substrate, a heating electrode and a signal sensing electrode, wherein the substrate is provided with a surface; the heating electrode is arranged on the surface; the signal sensing electrode is arranged in a thermal field formed by the heating electrode; the heating electrode is insulated from the signal sensing electrode; the heating electrode comprises a main heating part adjacent to the signal sensing electrode and auxiliary heating parts relatively far from the signal sensing electrode; the resistance of the main heating part is greater than that of the auxiliary heating parts. The semiconductor gas sensor has greater resistance by arranging the main heating part adjacent to the signal sensing electrode in the heating electrode into the auxiliary heating parts relatively far from the signal sensing electrode, ensures more effective utilization of heat generated by the heating electrode, reduces the surface power consumption and further reduces the power consumption of the sensor.
Description
Technical Field
The utility model belongs to the technical field of the electron device is made, concretely relates to semiconductor gas sensor.
Background
With the development of society and the advancement of science and technology, the scale of industrial production is gradually enlarged, but accidents caused by the accidents are also continuous, such as flammable, explosive, toxic and harmful gases generated in petrochemical industry and coal mine industry, once the gases exceed standards and leak, the health of production personnel and residents living around can be seriously affected, and casualties and property loss can be caused if the gases cause explosion. In addition, with the improvement of living standard of people and the transformation of decoration requirements of people on home environment, the problem of indoor air quality is increasingly outstanding, and malignant cases caused by toxic standard exceeding after decoration are reported more often. In order to ensure safety and prevent diseases, various detection methods and detection instruments have been developed, and among them, gas sensors have been widely used in the production and living fields of various industries.
Gas sensors are mainly classified into electrochemical type, semiconductor type, thermal conduction type, optical type, and the like. Among them, the semiconductor sensor is receiving more and more attention because of its high detection sensitivity, short response recovery time, small element size, long life and low price. Particularly, with the development of micro-machining technology in recent years, semiconductor gas sensors are more developed toward integration and intellectualization. Because the metal oxide semiconductor used as the gas sensitive material shows better sensitive characteristics when being heated to a higher temperature, a heating electrode of the gas sensitive material must be prepared first and then a signal sensing electrode must be prepared when the semiconductor gas sensor is prepared.
At present, when a gas sensor is prepared by a microelectronic process, most of the gas sensors in the prior art have high power consumption and are not energy-saving, or the gas sensors are low in power consumption and high in cost by using expensive materials at one time; the other method achieves the purpose of reducing power consumption by etching the bottom of the substrate into inverted pyramid-shaped pits, but although the sensor with the structure has low power consumption, the preparation process needs to pass through a photoetching process, an etching process and a deposition process for many times, the process flow is more complex, and the cost is higher; in addition, the temperature of the heating electrode on the surface of the substrate is not uniform, and the regional temperature is different.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a semiconductor gas sensor of low-power consumption.
In order to realize the above object of the present invention, the present invention provides a semiconductor gas sensor, including:
a substrate having a surface;
a heating electrode disposed on the surface, and a signal sensing electrode located in a thermal field formed by the heating electrode, the heating electrode and the signal sensing electrode being insulated from each other, the heating electrode including a primary heating portion adjacent to the signal sensing electrode and a secondary heating portion relatively distant from the signal sensing electrode; wherein,
the resistance of the primary heating portion is greater than the resistance of the secondary heating portion.
As a further improvement of the present invention, the width of the main heating portion is smaller than the width of the sub heating portion.
As a further improvement of the present invention, the main heating portion has a first line width, and the sub-heating portion has a second line width.
As a further improvement of the present invention, the resistance of the heating electrode decreases gradually in the direction away from the signal sensing electrode.
As a further improvement of the present invention, the signal sensing electrode comprises a metal oxide thin film, or at least two conductive electrodes and a functional layer connecting the conductive electrodes.
As a further improvement of the present invention, the metal oxide film is selected from SnO2、ZnO、In2O3、WO3、NiO、TiO2、Fe2O3、CoO、Co3O, MnO.
As a further improvement of the present invention, the heating electrode surrounds the signal sensing electrode, the main heating portion is smaller than the resistance of the remaining main heating portion at the intersection of the extension lines in the longitudinal direction of the signal sensing electrode.
As a further improvement of the present invention, the main heating portion is larger than the line width of the remaining main heating portion in the line width of the intersection of the extension lines in the longitudinal direction of the signal sensing electrode.
As a further improvement of the present invention, the heating electrode and the conductive electrode are made of metal or alloy film, the metal is selected from one of Pt, Au, Ag, Cu, Al, Ni, and W, and the alloy film is selected from one of nickel-cadmium alloy film, molybdenum-manganese alloy film, copper-zinc alloy film, palladium-silver alloy film, platinum-copper alloy film, and iron-cobalt alloy film.
The above object of the present invention can also be achieved by a method of providing a semiconductor gas sensor, comprising:
a substrate having a surface;
a heater electrode disposed on the surface, and a signal sensing electrode located in a thermal field formed by the heater electrode, the heater electrode and the signal sensing electrode being insulated from each other; wherein,
the resistance of the part of the heating electrode which is away from the signal sensing electrode by more than the preset distance is less than that of the part of the heating electrode which is away from the signal sensing electrode by less than the preset distance.
Compared with the prior art, the utility model provides a semiconductor gas sensor sets up the secondary heating portion that sets up to keeping away from signal sensing electrode relatively for the main heating portion of neighbouring signal sensing electrode in with heating electrode has bigger resistance, has guaranteed the more effective utilization of the heat that heating electrode produced, has reduced the surface power consumption loss, and then has reduced the sensor consumption, and the thermal field is even.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of a semiconductor gas sensor according to the present invention;
FIG. 2 is a schematic view of the structure of a semiconductor gas sensor having the same heating electrode wiring pattern as that of FIG. 1 but having equal resistance in each portion of the heating electrode;
fig. 3 to 5 are schematic structural diagrams of three embodiments of the semiconductor gas sensor of the present invention;
fig. 6 is a schematic structural diagram of another embodiment of the semiconductor gas sensor of the present invention;
fig. 7 is a schematic structural diagram of another embodiment of the semiconductor gas sensor of the present invention;
FIG. 8 is a schematic view of the shape of a sawtooth waveform heating electrode;
FIG. 9 is a schematic view of the shape of a triangular wave-shaped heating electrode;
fig. 10 and 11 are schematic diagrams of the shape of the sine wave heating electrode.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. However, these embodiments are not intended to limit the present invention, and structural, methodical, or functional changes that may be made by one of ordinary skill in the art based on these embodiments are all included in the scope of the present invention.
It should be noted that the same reference numbers or signs may be used in different embodiments, but this does not represent structural similarities or relationships, but merely for convenience of description.
Referring to fig. 1, a specific embodiment of a semiconductor gas sensor 100 according to the present invention is described, the semiconductor gas sensor 100 including a substrate 10, a signal sensing electrode 30, and a heating electrode 20.
The substrate 10 has a surface 11, the surface 11 is relatively determined for subsequent circuit layout, the heating electrode 20 is fabricated on the surface 11, the signal sensing electrode 30 is located in a thermal field formed by the heating electrode 20, and is insulated from the heating electrode 20. In the present embodiment, the heating electrode 20 has a substantially square wave shape.
The signal sensing electrode 30 as referred to herein is preferably placed in the thermal field formed by the heater electrode 20 in two layouts. One, the heating electrode 20 and the signal sensing electrode 30 are both disposed on the surface 11, and the heating electrode 20 and the signal sensing electrode 30 are spaced apart from each other to be insulated; alternatively, an insulating dielectric layer (not shown) is disposed between the heating electrode 20 and the signal sensing electrode 30 to perform an insulating function. The insulating medium layer can be made of one or more materials selected from aluminum oxide, silicon dioxide and hafnium dioxide, the thickness of the insulating medium layer is thinner than that of the substrate, so that the requirement for the heating efficiency of the heating electrode 20 is not high, the insulating medium layer can be made in an ink jet printing mode, the ink jet printing resolution is high, the pattern can be printed to several micrometers accurately in a positioning mode, and the process flow is simple, the operation is convenient and the cost is low.
The substrate 10 can be one selected from a silicon wafer, a glass sheet, a quartz sheet, an alumina ceramic sheet, an aluminum nitride ceramic sheet, a zirconia ceramic sheet and a polyimide film with oxidized surfaces, and the thickness of the substrate 10 is 100 um-1000 um. The material of the heating electrode 20 is selected from one of gold, silver, platinum, copper, tungsten, platinum-gold alloy, silver-palladium alloy, nickel-chromium alloy, molybdenum-manganese alloy, titanium nitride, and ruthenium oxide.
The signal sensing electrode 30 includes two conductive electrodes 31, and a nanometal oxide functionalized carbon nanotube material electrically connecting the two conductive electrodes 31. The conductive electrode 31 may be made of a metal such as one of Pt, Au, Ag, Cu, Al, Ni, W, or an alloy film such as one of a nickel-cadmium alloy film, a molybdenum-manganese alloy film, a copper-zinc alloy film, a palladium-silver alloy film, a platinum-copper alloy film, and an iron-cobalt alloy film. At least two signal sensing electrodes 30 are included in one semiconductor gas sensor 100, and more signal sensing electrodes 30 may be provided depending on the kind of sensor. The signal sensing electrodes are shown as being linear, and in some other embodiments, the signal sensing electrodes may be comb-shaped.
The nano metal oxide functionalized carbon nanotube material comprises a carbon nanotube and nickel oxide, wherein the mass ratio of the carbon nanotube to the nickel oxide is 1: 0.1-1: 30. Further preferably, the mass ratio of the carbon nanotubes to the nickel oxide is 1:1 to 1:20, or even more preferably 1:1.7 to 1: 18. The carbon nanotube has hydroxyl bond on its surface to adsorb nickel oxide and to maintain the nickel oxide.
The microcosmic carbon nanotubes in the provided nano metal oxide functionalized carbon nanotube material are overlapped randomly, more gaps exist between the microcosmic carbon nanotubes, the nickel oxide is adsorbed on the surface of the functional layer, and the nickel oxide can be adsorbed in the gaps in the whole carbon nanotube material area, so that gas to be detected can flow between the gaps formed by overlapping the carbon nanotubes, and the detection effect of the semiconductor gas sensor is better.
In the specific manufacturing process, in order to ensure the effective formation of the gap, firstly a layer of carbon nano tube is printed on the substrate, then nickel hydroxide is deposited in the carbon nano tube area, and the deposited nickel hydroxide is converted into nickel oxide through sintering, so that the overlapping randomness between the carbon nano tubes and the stability of the combination relationship between the nickel oxide and the carbon nano tubes are ensured.
In the present embodiment, the heating electrode 20 surrounds the signal sensing electrode 30, the heating electrode 20 and the signal sensing electrode 30 are not staggered with each other, and the surrounding heating electrode 20 can provide a uniform thermal field to generate a better heating effect on the signal sensing electrode 30.
The heating electrode 20 includes a main heating part 21 and a sub-heating part 22 connected to the main heating part 21, the main heating part 21 is adjacent to the signal sensing electrode 30 and the sub-heating part 22 is relatively distant from the signal sensing electrode 30, and the resistance of the main heating part 21 is greater than the resistance of the sub-heating part 22. The heating electrode portion having a larger resistance value may provide a relatively higher heating efficiency at the same voltage, and providing the secondary heating portion 22 farther from the signal sensing electrode 30 with a relatively smaller resistance may reduce surface power consumption lost by heating the electrode portion; meanwhile, the relative increase in the resistance value of the main heating portion 21 can improve the response rate of the sensor to the detection gas without increasing the overall power consumption of the sensor.
Preferably, the resistance of the heating electrode 20 decreases gradually in a direction away from the signal sensing electrode 30, and a uniform decreasing resistance can provide a better thermal field, further reducing the surface power consumption of the sensor.
The resistance of the heater electrode 20 may be changed in various ways, such as by changing the material. In the present embodiment, the resistance value of the heating electrode 20 is preferably changed by changing the cross-sectional area thereof, and since the heating electrode 20 is designed to have the same thickness when manufactured, the width of the primary heating portion 21 is smaller than the width of the secondary heating portion 22 in the present embodiment, and more preferably, the width of the heating electrode 20 is gradually increased in a direction away from the signal sensing electrode 30.
In some alternative embodiments, the main heating part 21 and the sub heating part 22 may also have a certain first line width and a certain second line width, respectively; alternatively, the line widths of the main heating unit 21 and the sub-heating unit 22 are in multiple stages, and the line width of each stage of the main heating unit 21 or the sub-heating unit 22 is constant, and the resistance tends to decrease gradually as a whole.
The resistance of the intersection 211 of the main heating part 21 and the extension line of the signal sensing electrode 30 in the longitudinal direction is smaller than that of the remaining part 212. Accordingly, the line width of the intersection 211 of the main heating part 21 and the extension line of the signal sensing electrode 30 in the longitudinal direction is greater than the line width of the remaining part 212. The design ensures the uniformity of the thermal field generated by the main heating part. For the heating electrode that has fixed linewidth, the utility model provides a heating electrode 20 can reduce the loss of surface consumption under the condition of the same consumption, promotes the response rate of sensor.
The following comparative explanation is provided to better explain the present invention, as in 100 'of the semiconductor gas sensor of fig. 2, the resistance of the heating electrode 20' is controlled to be equal to the resistance of the heating electrode 20 of fig. 1, except that the heating electrode 20 'of fig. 2 has a constant width, that is, the unit resistance of the heating electrode 20' is equal. The power consumption of the heater electrodes shown in fig. 1 and 2 is the same at the same voltage.
In the simulation of the thermal field generated by the heating electrode in fig. 2 and fig. 1, it is known that the temperature at the signal sensing electrode in fig. 1 is uniformly heated, the requirement of heating the gas sensitive material is met, and the temperature is reduced by 20K after regulation and control, but still in the response range of the gas sensitive material. And, after the Comsol Multiphysics 4.3a calculates, the heating electrode surface loss consumption is 5.2024W in fig. 2, and the heating electrode surface loss consumption is 5.08237W in fig. 1, the utility model provides a semiconductor gas sensor's consumption has reduced 0.12003W, and the consumption reduces.
Referring to fig. 3-5, for the three embodiments of the semiconductor gas sensor of the present invention, Thermal Stress (ts), Electric Currents Shell (ecs), Shell (Shell) modules in Comsol Multiphysics 4.3a multi-field physical coupling software are used to simulate the Thermal field generated by the heating electrode in fig. 5-7. Wherein the specific material characteristics are as follows:
the simulation parameters were as follows:
it is known from the simulations of the thermal fields generated by the heating electrodes in fig. 3 to 5 that the temperature fields between the heating electrodes 20 are uniformly distributed without significant gradient changes, and the temperatures are 940K, 580K, and 360K, respectively.
While the above limitations on all or some of the features of the heater electrode 20 are satisfied, various specific heater electrode shapes can be designed, and specific embodiments are preferably selected for the exemplary description below.
Referring to the embodiment shown in fig. 6, the main heating part 21 is substantially in a coupled stacked U-shape, and the lengths of the heating electrodes on both sides of the signal sensing electrode are substantially equal to provide a uniform thermal field.
Referring to the embodiment shown in fig. 7, the heater electrode 20 has an overall serpentine shape, and the lengths of the heater electrodes on both sides of the signal sensing electrode are approximately equal to provide a uniform thermal field.
The heating electrode may have a sawtooth waveform as shown in fig. 8, a triangular waveform as shown in fig. 9, or a sinusoidal waveform as shown in fig. 10 and 11.
With continued reference to fig. 1, yet another embodiment of the semiconductor gas sensor 100 of the present invention will be described. Unlike the above-described embodiment, in the present embodiment, the resistance of the portion of the heating electrode spaced apart from the signal sensing electrode 30 by a distance greater than the preset pitch is smaller than the resistance of the portion of the heating electrode spaced apart from the signal sensing electrode 30 by a distance less than the preset pitch. Through setting for and predetermineeing the interval, when carrying out heating electrode's wiring, can conveniently confirm this part heating electrode's that needs set up resistance according to the heating electrode part with the wiring apart from signal sensing electrode, convenient and fast more to, owing to carried out regulation and control to heating electrode's resistance, can reduce heating electrode's surface power consumption loss.
The utility model discloses an above-mentioned embodiment, following beneficial effect has: the utility model provides a semiconductor gas sensor sets up the secondary heating portion that sets up to keeping away from signal sensing electrode relatively for through the main heating portion with adjacent signal sensing electrode in the heating electrode has bigger resistance, has guaranteed the more effective utilization of the heat that the heating electrode produced, has reduced the surface power consumption loss, and then has reduced the sensor consumption, and the thermal field is even.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the practical implementation of the present invention, and they are not intended to limit the scope of the present invention, and all equivalent implementations or modifications that do not depart from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (10)
1. A semiconductor gas sensor, comprising:
a substrate having a surface;
a heating electrode disposed on the surface, and a signal sensing electrode located in a thermal field formed by the heating electrode, the heating electrode and the signal sensing electrode being insulated from each other, the heating electrode including a primary heating portion adjacent to the signal sensing electrode and a secondary heating portion relatively distant from the signal sensing electrode; wherein,
the resistance of the primary heating portion is greater than the resistance of the secondary heating portion.
2. The semiconductor gas sensor according to claim 1, wherein a width of the primary heating portion is smaller than a width of the secondary heating portion.
3. The semiconductor gas sensor according to claim 2, wherein the primary heating portion has a first line width, and the secondary heating portion has a second line width.
4. The semiconductor gas sensor according to claim 1, wherein the heating electrode gradually decreases in resistance in a direction away from the signal sensing electrode.
5. The semiconductor gas sensor according to claim 1, wherein the signal sensing electrode comprises a metal oxide thin film, or at least two conductive electrodes and a functional layer connecting the conductive electrodes.
6. The semiconductor gas sensor according to claim 5, wherein the metal oxide thin film is selected from SnO2、ZnO、In2O3、WO3、NiO、TiO2、Fe2O3、CoO、Co3O, MnO.
7. The semiconductor gas sensor according to claim 1, wherein the heating electrode is provided around the signal sensing electrode, and an intersection of the main heating portion and an extension line of the signal sensing electrode in a longitudinal direction has a smaller resistance than that of a remaining portion of the main heating portion.
8. The semiconductor gas sensor according to claim 7, wherein a line width of an intersection of the main heating portion and an extension line in a longitudinal direction of the signal sensing electrode is larger than a line width of a remaining portion of the main heating portion.
9. The semiconductor gas sensor according to claim 5, wherein the heating electrode and the conductive electrode are made of a metal selected from one of Pt, Au, Ag, Cu, Al, Ni, W or an alloy film selected from one of a nickel-cadmium alloy film, a molybdenum-manganese alloy film, a copper-zinc alloy film, a palladium-silver alloy film, a platinum-copper alloy film, and an iron-cobalt alloy film.
10. A semiconductor gas sensor, comprising:
a substrate having a surface;
a heater electrode disposed on the surface, and a signal sensing electrode located in a thermal field formed by the heater electrode, the heater electrode and the signal sensing electrode being insulated from each other; wherein,
the resistance of the part of the heating electrode which is away from the signal sensing electrode by more than the preset distance is less than that of the part of the heating electrode which is away from the signal sensing electrode by less than the preset distance.
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| CN103698359A (en) * | 2013-12-13 | 2014-04-02 | 苏州纳格光电科技有限公司 | Semiconductor gas sensor |
| CN103698359B (en) * | 2013-12-13 | 2016-06-15 | 苏州纳格光电科技有限公司 | Semiconductor gas sensor |
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