CN203981623U - Functional areas have the semiconductor gas sensor of roughness - Google Patents
Functional areas have the semiconductor gas sensor of roughness Download PDFInfo
- Publication number
- CN203981623U CN203981623U CN201420374411.2U CN201420374411U CN203981623U CN 203981623 U CN203981623 U CN 203981623U CN 201420374411 U CN201420374411 U CN 201420374411U CN 203981623 U CN203981623 U CN 203981623U
- Authority
- CN
- China
- Prior art keywords
- substrate
- gas sensor
- roughness
- semiconductor gas
- conductive electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 64
- 239000000758 substrate Substances 0.000 claims abstract description 56
- 239000002346 layers by function Substances 0.000 claims abstract description 23
- 239000010410 layer Substances 0.000 claims abstract description 11
- 210000004027 cell Anatomy 0.000 claims description 29
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 9
- 210000002421 cell wall Anatomy 0.000 claims description 9
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- 229910052697 platinum Inorganic materials 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000012811 non-conductive material Substances 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 229910052681 coesite Inorganic materials 0.000 claims description 4
- 229910052593 corundum Inorganic materials 0.000 claims description 4
- 229910052906 cristobalite Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- 229910052682 stishovite Inorganic materials 0.000 claims description 4
- 229910052905 tridymite Inorganic materials 0.000 claims description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000005566 electron beam evaporation Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 238000001027 hydrothermal synthesis Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 238000001459 lithography Methods 0.000 claims description 3
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 3
- 229910052748 manganese Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 abstract description 8
- 230000004044 response Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 82
- 239000000463 material Substances 0.000 description 32
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 9
- 230000006872 improvement Effects 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 239000002041 carbon nanotube Substances 0.000 description 7
- 229910021393 carbon nanotube Inorganic materials 0.000 description 7
- 238000001514 detection method Methods 0.000 description 7
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910044991 metal oxide Inorganic materials 0.000 description 5
- 150000004706 metal oxides Chemical class 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000001413 cellular effect Effects 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000010944 silver (metal) Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000002109 single walled nanotube Substances 0.000 description 2
- 239000002341 toxic gas Substances 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 206010063385 Intellectualisation Diseases 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- PCEXQRKSUSSDFT-UHFFFAOYSA-N [Mn].[Mo] Chemical compound [Mn].[Mo] PCEXQRKSUSSDFT-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000012824 chemical production Methods 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 201000010099 disease Diseases 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- JUWSSMXCCAMYGX-UHFFFAOYSA-N gold platinum Chemical compound [Pt].[Au] JUWSSMXCCAMYGX-UHFFFAOYSA-N 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- WSFSSNUMVMOOMR-NJFSPNSNSA-N methanone Chemical compound O=[14CH2] WSFSSNUMVMOOMR-NJFSPNSNSA-N 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 1
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007784 solid electrolyte Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000006557 surface reaction Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Landscapes
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Abstract
The utility model has disclosed a kind of functional areas and has had the semiconductor gas sensor of roughness, comprises substrate; Be arranged on suprabasil signal sensing electrode, signal sensing electrode comprises two conductive electrodes and is electrically connected the functional layer of two conductive electrodes; Be arranged on suprabasil heating electrode, heating electrode and signal sensing electrode are insulated from each other; Wherein, the surfaceness in substrate region between two conductive electrodes is greater than suprabasil remaining area.The semiconductor gas sensor that the utility model provides, by increasing roughness in the substrate in region between conductive electrode, in the making of follow-up function layer, gas sensitive can and substrate between form more space, be convenient to passing through of gas to be detected, thus the sensitivity of lift gas sensor and the speed of response.
Description
Technical Field
The utility model belongs to the technical field of the electron device makes, concretely relates to functional area has semiconductor gas sensor of roughness.
Background
With the rapid development of industry, the environmental pollution problem is more and more serious, for example, CO and NO in automobile exhaustx、SOxSuch harmful gases as formaldehyde, toluene and the like existing in indoor decoration, methane gas leaked from coal mines, flammable, explosive and toxic gases generated in chemical production and the like, and the toxic gases cause serious threats to the health of people. In order to ensure personal safety and prevent diseases, various detection methods and detection instruments have been developed, in which gas sensors play an important role in the fields of home life, emission monitoring, aviation, medical care, hygiene, and the like.
At present, gas sensors are widely available in various types and application ranges, and can be roughly classified into a semiconductor type, an electrochemical type, a contact combustion type, a solid electrolyte type, an infrared type, and the like. Among them, the semiconductor sensor is receiving more and more attention because of its high detection sensitivity, short response recovery time, small element size, long life and low price. Particularly, with the development of micro-machining technology in recent years, semiconductor gas sensors are more developed toward integration and intellectualization.
In a semiconductor gas sensor, a metal oxide is generally used as a sensitive material, and a gas to be detected is monitored by adsorbing the gas on the surface of the metal oxide and causing the change of self resistance through surface reaction. The stronger the adsorption capacity of the metal oxide is, the higher the selectivity and sensitivity of the gas sensitive element are, and in order to achieve the above effects, gaps which can allow gas to be detected to pass through are usually required to be formed among the gas sensitive materials, and due to the structure, the gas sensitive materials cannot have more additive amount, so that the gaps are prevented from being excessively filled, and the detection of the gas to be detected is prevented from being influenced; however, if the amount of the gas sensitive material added is too small, the performance of the sensor may be deteriorated due to oxidation or peeling of the gas sensitive material during long-term use.
Disclosure of Invention
An object of the utility model is to provide a functional area has semiconductor gas sensor of roughness, and it can improve the gas detection performance of sensor.
In order to solve the above problem, the present invention provides a semiconductor gas sensor with roughness in functional area, including:
a substrate;
the signal sensing electrode is arranged on the substrate and comprises two conductive electrodes and a functional layer electrically connected with the two conductive electrodes;
a heating electrode disposed on the substrate, the heating electrode and the signal sensing electrode being insulated from each other; wherein,
the surface roughness of the substrate in the area between the two conductive electrodes is larger than the remaining area on the substrate.
The utility model discloses above-mentioned purpose can also solve through following mode, provides a semiconductor gas sensor that functional area has roughness, include:
a substrate;
the signal sensing electrode is arranged on the substrate and comprises two conductive electrodes and a functional layer electrically connected with the two conductive electrodes;
a heating electrode disposed on the substrate, the heating electrode and the signal sensing electrode being insulated from each other; wherein,
the surface roughness of the substrate in the area between the two conductive electrodes is 100 nm-50 mu m.
As a further improvement of the present invention, the functional layer includes at least two layers stacked on each other.
As a further improvement of the present invention, the region on the substrate between the two conductive electrodes is formed with grooves and/or ridges.
As a further improvement of the utility model, the cross section of the groove is in a geometrical shape selected from the group consisting of a U shape, a flat-bottom U shape, a triangular waveform and a sawtooth waveform.
As a further improvement of the present invention, the rib is in a grid shape including a plurality of cells, and the plurality of cells are separated from or connected to each other.
As a further development of the invention, the grid has a geometry selected from the group consisting of quadrilateral, pentagonal, hexagonal, pentagonal.
As a further improvement of the utility model, the cell has a cell wall, and at least part of the cell wall is provided with a vent.
As a further improvement of the present invention, the protruding edge is honeycomb-shaped including a plurality of cells, the honeycomb-shaped protruding edge includes at least two-layer dislocation superimposed honeycomb layer.
As a further improvement of the utility model, the preparation method of the convex edge is selected from one of silk screen printing, sol-gel, hydrothermal synthesis, magnetron sputtering, electron beam evaporation and chemical vapor deposition; the manufacturing method of the groove is selected from one of electron beam exposure lithography, ion beam etching and nano imprinting.
As a further improvement of the present invention, the rib is made of conductive material or non-conductive material, the conductive material comprises metal and alloy film, the metal is selected from one of Pt, Au, Ag, Cu, Ni and W, the alloy film is selected from one of Ni/Cr, Mo/Mn, Cu/Zn, Ag/Pd, Pt/Au and Fe/CoThe non-conductive material is selected from SiO2、Al2O3、ZrO2MgO and CaO.
Compared with the prior art, the utility model provides a semiconductor gas sensor that functional area has roughness, through increase roughness on the regional basement between the conductive electrode, in the preparation of follow-up functional layer, gas sensitive material can form more spaces with the basement between, is convenient for wait to detect the passing of gas; meanwhile, when the gas sensor is used as a functional layer, the gas sensitive materials are manufactured on the substrate in batches, so that the layering sense of the gas sensitive materials during construction is increased, and gaps among the gas sensitive materials are further increased, thereby improving the sensitivity and the response speed of the gas sensor.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of a semiconductor gas sensor according to the present invention;
FIG. 2 is a schematic diagram of a semiconductor gas sensor according to the present invention in which a functional layer is formed;
FIG. 3 is a schematic structural diagram of a heating electrode according to an embodiment of the semiconductor gas sensor of the present invention;
FIG. 4 is a schematic view of the shape of a sawtooth waveform heating electrode;
FIG. 5 is a schematic view of the shape of a triangular wave-shaped heating electrode;
FIGS. 6 and 7 are schematic views of the shape of a sine wave-shaped heating electrode;
fig. 8 is a schematic structural view of a semiconductor gas sensor according to another embodiment of the present invention;
fig. 9 is a schematic structural view of another embodiment of the semiconductor gas sensor of the present invention;
fig. 10 is a schematic structural view of a semiconductor gas sensor according to another embodiment of the present invention;
fig. 11 is a schematic structural view of a semiconductor gas sensor according to another embodiment of the present invention;
FIG. 12 is a schematic diagram of the structure of a single cell of FIG. 11;
fig. 13 is a schematic structural view of a semiconductor gas sensor according to another embodiment of the present invention;
fig. 14 is a cross-sectional view of a substrate in yet another embodiment of a semiconductor gas sensor in accordance with the present invention;
fig. 15 is a cross-sectional view of a substrate in yet another embodiment of a semiconductor gas sensor in accordance with the present invention;
fig. 16 is a cross-sectional view of a substrate in yet another embodiment of a semiconductor gas sensor in accordance with the present invention.
Detailed Description
The present invention will be described in detail below with reference to specific embodiments shown in the drawings. However, these embodiments are not intended to limit the present invention, and structural, methodical, or functional changes that may be made by one of ordinary skill in the art based on these embodiments are all included in the scope of the present invention.
Referring to fig. 1, a semiconductor gas sensor with roughness in the functional region according to an embodiment of the present invention will be described. In the present embodiment, the semiconductor gas sensor 100 includes a substrate 40, a signal sensing electrode 10, and a heating electrode 20.
The signal sensing electrode 10 and the heating electrode 20 are disposed on the substrate 40. Here, it should be noted that the substrate 40 generally has two opposite surfaces with a larger surface area for circuit layout, and the sidewall in the thickness direction of the substrate 40 is generally considered to be unsuitable for circuit element arrangement due to the smaller area defined, so unless otherwise specified, the reference "disposed on the substrate" in this embodiment should be understood as the larger surface, rather than the sidewall surface of the substrate 40.
The signal sensing electrode 10 and the heating electrode 20 may be disposed on the same surface or opposite surfaces of the substrate 40, and in contrast, if the signal sensing electrode 10 and the heating electrode 20 are respectively fabricated on two opposite surfaces of the substrate 40, the heating electrode 20 is required to have higher heating power, which unnecessarily increases the power consumption of the sensor 100, so the signal sensing electrode 10 and the heating electrode 20 are more preferably fabricated on the same surface of the substrate 40 in this embodiment.
The substrate 40 can be one selected from a silicon wafer, a glass sheet, a quartz sheet, an alumina ceramic sheet, an aluminum nitride ceramic sheet, a zirconia ceramic sheet and a polyimide film with oxidized surfaces, and the thickness of the substrate 40 is 100 um-1000 um.
The material of the heating electrode 20 is selected from one of gold, silver, platinum, copper, tungsten, platinum-gold alloy, silver-palladium alloy, nickel-chromium alloy, molybdenum-manganese alloy, titanium nitride, and ruthenium oxide.
Referring to fig. 2, the signal sensing electrode 10 includes two conductive electrodes 11 and 12 and a functional layer 30 electrically connecting the two conductive electrodes 11 and 12. The conductive electrodes 11, 12 can be made of metal, such as one of Pt, Au, Ag, Cu, Al, Ni, W, or alloy thin film, such as one of Ni/Cr, Mo/Mn, Cu/Zn, Ag/Pd, Pt/Au, Fe/Co. One semiconductor gas sensor 100 includes at least two signal sensing electrodes, and a required number of signal sensing electrodes may be provided according to the type of the sensor.
According to the difference of the materials of the functional layer 30, the targeted gas can be effectively detected, and in one embodiment, for example, the nickel oxide functionalized carbon nanotube is adopted, so that the formaldehyde gas can be well detected. As known to those of ordinary skill in the art, carbon nanotubes are classified into multi-walled carbon nanotubes, which are carbon nanotubes having a metallic property, and single-walled carbon nanotubes, which are classified into carbon nanotubes having a semiconductor property and carbon nanotubes having a metallic property. And adopt single-walled carbon nanotube material to make the utility model discloses a nanometer metal oxide functionalized carbon nanotube has fine response to being very much like formaldehyde gas, utilizes the gas sensor that this kind of nanometer metal oxide functionalized carbon nanotube material made to realize detecting formaldehyde gas's high sensitivity, and the selectivity is good, and the consumption is lower.
The surface roughness of the area a of the substrate 40 between the two conductive electrodes 11, 12 is greater than the remaining area on the substrate 40. Here, the surface roughness of the region A is preferably 100nm to 50 μm. Generally speaking, the surface smoothness of a cut substrate is high, when a functional layer is manufactured on the substrate, a gap cannot be formed between a gas-sensitive material in the functional layer and the substrate, a gas to be detected cannot be in full contact with the gas-sensitive material, the roughness of the substrate is particularly large, a relatively ideal gap can be formed between the gas-sensitive material in the functional layer and the substrate when the gas-sensitive material is built, the gas to be detected can be enabled to circulate through the gaps, the surface active sites of the gas-sensitive material are increased, and the sensitivity and the response rate of the sensor are improved.
Specifically, the substrate 40 is formed with a plurality of grooves and/or ridges in the region a between the two conductive electrodes 11, 12. The ribs may be made by vacuum or non-vacuum processes, such as, for example, screen printing, sol-gel, hydrothermal synthesis, magnetron sputtering, electron beam evaporation, chemical vapor deposition; the grooves may be made by processes such as e-beam exposure lithography, ion beam etching, nanoimprinting, and the like.
In some embodiments, the ribs may be made of a conductive material, such as a metal or alloy film, the metal may be one selected from Pt, Au, Ag, Cu, Ni, W, and the alloy film may be SiO2、Al2O3、ZrO2One of MgO and CaO; in other embodiments, the ribs may be made of a non-conductive material, such as SiO2、Al2O3、ZrO2MgO, CaO, etc.
In order to increase the roughness, the same substrate 40 may be formed with ribs and grooves, or only one of them may be used.
Referring to fig. 2, in order to further increase the space between the gas-sensitive materials in the functional layer 30, in the present embodiment, the functional layer 30 is provided as at least two layers 31, 32 that are stacked on each other. That is, when the functional layer 30 is manufactured, the same amount of gas sensitive material as the original amount is manufactured on the substrate 40 in batches, after a layer of gas sensitive material is manufactured, high temperature annealing is performed, and the steps are repeated on the layer of gas sensitive material until the functional layer 30 is manufactured. Therefore, the functional layer 30 is formed by overlapping multiple layers of gas sensitive materials, the layering sense of the gas sensitive materials during construction is increased, and meanwhile, the functional layer 30 manufactured in the mode can ensure that more gaps among the gas sensitive materials are reserved, the gas sensitive materials can be conveniently in full contact with gas to be detected, and the detection effect of the gas sensor is optimized.
Referring to fig. 3 in combination, the heater electrode 20 is disposed to surround the signal sensing electrode 10 and insulated from each other, so that the heater electrode 20 configured in this way can provide a uniform thermal field to generate a better heating effect on the signal sensing electrode 10. In this embodiment, the surrounding is "non-closed" so as to facilitate electrical connection between the signal sensing electrode 10 and an external circuit.
The heating electrode 20 includes a main heating part 21 and a sub-heating part 22 connected to the main heating part 21, the main heating part 21 includes a first main heating section 211 and a second main heating section 212 symmetrically disposed, and the signal sensing electrode 10 is located between the first main heating section 211 and the second main heating section 212. The main heating portion 21 is located closer to the signal sensing electrode 10 than the sub-heating portion 22, and it should be understood that the terms "main heating portion" and "sub-heating portion" are merely defined for convenience of description, and do not represent fundamental differences in manufacturing processes or structures.
In the main heating section 21, the temperature difference of the thermal field generated by the first main heating section 211 and the second main heating section 212 is less than 100 ℃, and further, the temperature difference of the thermal field is controlled to be less than 50 ℃ to ensure the sensitivity and reliability of the semiconductor gas sensor 100 to the detection of the target gas. Of course, in the most desirable alternative embodiment, the first main heating section 211 and the second main heating section 212 have equal resistance values to ensure that the temperature of the thermal field generated by the first main heating section 211 and the second main heating section 212 is the same.
The distance between the first main heating section 211 and the adjacent first conductive electrode 11 is equal to the distance between the second main heating section 212 and the adjacent conductive electrode 12 to ensure uniform heating of the conductive electrode, the secondary heating section 22 includes a first secondary heating section 221 and a second secondary heating section 222 connected to the first main heating section 211 and the second main heating section 212, respectively, and the resistance values of the first secondary heating section 221 and the second secondary heating section 222 are also preferably equal.
The first heating stage 221 and the second heating stage 222 form an identical pattern in a plan view, and more preferably, the first heating stage 221 and the second heating stage 222 are symmetrically disposed with respect to each other.
While the above-described limitations on all or part of the features of the heating electrode 20 are satisfied, various specific shapes of the heating electrode may be designed, without being limited to the square-wave heating electrode shown in the drawings, and for example, the heating electrode may be designed in a sawtooth waveform as shown in fig. 4, a triangular waveform as shown in fig. 5, or a sinusoidal waveform as shown in fig. 6 and 7.
Specific examples are provided below to better explain the present embodiment
Example one
Referring to fig. 8, in the gas sensor 100a, a signal sensing electrode 10 and a heating electrode 20 are disposed on a substrate 40, the heating electrode 20 is disposed around the signal sensing electrode 10, a line width of the heating electrode 20 is 10 μm to 200 μm, and a distance between each portion varies between 10 μm to 100 μm; in the signal sensing electrode 10, the conductive electrodes 11 and 12 are symmetrically arranged, and the line width is 20 μm to 200 μm.
The base 40 of the region between the conductive electrodes 11 and 12 is provided with ribs 50a, the ribs 50a are in a grid shape including a plurality of cells 501a, and the cells 501a are connected with each other. The grid adopts the regular hexagon design, and the length of side scope of regular hexagon is 10um ~200um, and the linewidth of regular hexagon is 5um ~100um, and the height that cell 501a protruding substrate surface is 100nm ~50 um.
Example two
Referring to fig. 9, similar to the embodiment, in the gas sensor 100b, the base 40 in the region between the conductive electrodes 11 and 12 is provided with the ribs 50b, the ribs 50b are in a grid shape including a plurality of cells 501b, and the cells 501b are connected to each other. The difference is that the grid adopts the rhombus design, and the length of side of rhombus scope is 10um ~200um, and the linewidth of rhombus is 5um ~100um, and the height that cell 501b arch substrate surface is 100nm ~80 um.
EXAMPLE III
Referring to fig. 10, similar to the embodiment, in the gas sensor 100c, the base 40 in the area between the conductive electrodes 11 and 12 is provided with the ribs 50c, the ribs 50c are in a grid shape including a plurality of cells 501c, and the grid is also in a regular hexagon design. In contrast, several cells 501c are separated from each other.
Example four
Referring to fig. 11 and 12, similar to the third embodiment, in the gas sensor 100d, the base 40 in the area between the conductive electrodes 11 and 12 is provided with the ribs 50d, the ribs 50d are in a grid shape including a plurality of cells 501d, and the cells 501d are separated from each other, but specifically, the cell walls 5011d of the cells 501d are provided with the vent holes 5012d, and preferably, the vent holes 5012d may be defined by the cut-off portions provided on the cell walls 5011 d. Of course, these vent holes 5012d may be provided only on a part of the cell 501d, and the vent holes 5012d may allow the gas to be detected to more easily enter the cell 501d and to sufficiently contact the gas sensitive material attached inside the cell 501 d.
EXAMPLE five
Referring to fig. 13, unlike the previous embodiments, the protruding rib 50 of the substrate 40 in the area between the conductive electrodes 11 and 12 is in the shape of a honeycomb including a plurality of cells, and the honeycomb protruding rib 50 includes at least two honeycomb layers 51 and 52 stacked in a staggered manner.
One skilled in the art will appreciate that a honeycomb structure is a member arranged to form an edge or face of a unit cell. (see, for example, Cellular Solids: structures and Properties, L.J. Gibson and M.F. Ashby (2 nd edition, 1997, Cambridge university Press, Cambridge, UK.) or "Multifunctional Periodic Cellular Metals," H.N.G.Walley (Photocosmetic Transactions of the Royal Society A, Vol.206, pp.31-68,2006), the Cellular ribs 50 of the present embodiment are explained further herein in the manner mentioned.
Here, it should be further noted that, in each honeycomb layer 51, 52, between adjacent cells, each cell may be constructed with an independent cell wall as shown in the figure, or the cell walls may be shared by the connection portions of the adjacent cells, which may be alternatively or jointly present in the honeycomb-shaped protruding rib 50 of the present invention; in a preferred embodiment, the cell walls are shared by the adjoining portions of the cells in the honeycomb rib 50.
EXAMPLE six
Referring to fig. 14, in the present embodiment, a groove 60a is formed in a region of the substrate 40 between the conductive electrodes 11 and 12. The cross section of the groove 60a is in a flat-bottom U shape, and the groove depth is 400 nm-50 μm. And the heights of the side walls of different grooves are not consistent, so that the gas sensitive material is convenient to build.
EXAMPLE seven
Referring to fig. 15, the sectional shape of the groove 60b is a triangular wave shape, similar to the sixth embodiment.
Example eight
Referring to fig. 16, similar to the sixth embodiment, except that the sectional shape of the groove 60c is U-shaped.
It should be noted that although the above embodiments exemplarily show a specific manner of increasing the surface roughness of the substrate 40 by using the ribs and the grooves, the specific shapes of the ribs and the grooves are not limited by the above embodiments, for example, in the application of manufacturing the ribs, the grid may have a geometric shape selected from a quadrangle, a pentagon, a hexagon, and a pentagon; in the application of manufacturing the groove, the cross section of the groove can be in a sawtooth waveform and the like.
The utility model discloses an above-mentioned embodiment, following beneficial effect has: the utility model provides a semiconductor gas sensor, through increase roughness on the regional base between the conductive electrode, in the preparation of follow-up functional layer, the gas sensitive material can form more spaces with the base between, is convenient for wait to detect the passing of gas; meanwhile, when the gas sensor is used as a functional layer, the gas sensitive materials are manufactured on the substrate in batches, so that the layering sense of the gas sensitive materials during construction is increased, and gaps among the gas sensitive materials are further increased, thereby improving the sensitivity and the response speed of the gas sensor.
It should be understood that although the present description refers to embodiments, not every embodiment contains only a single technical solution, and such description is for clarity only, and those skilled in the art should make the description as a whole, and the technical solutions in the embodiments can also be combined appropriately to form other embodiments understood by those skilled in the art.
The above list of details is only for the practical implementation of the present invention, and they are not intended to limit the scope of the present invention, and all equivalent implementations or modifications that do not depart from the technical spirit of the present invention should be included in the scope of the present invention.
Claims (11)
1. A semiconductor gas sensor having a functional region with roughness, comprising:
a substrate;
the signal sensing electrode is arranged on the substrate and comprises two conductive electrodes and a functional layer electrically connected with the two conductive electrodes;
a heating electrode disposed on the substrate, the heating electrode and the signal sensing electrode being insulated from each other; wherein,
the surface roughness of the substrate in the area between the two conductive electrodes is larger than the remaining area on the substrate.
2. A semiconductor gas sensor having a functional region with roughness, comprising:
a substrate;
the signal sensing electrode is arranged on the substrate and comprises two conductive electrodes and a functional layer electrically connected with the two conductive electrodes;
a heating electrode disposed on the substrate, the heating electrode and the signal sensing electrode being insulated from each other; wherein,
the surface roughness of the substrate in the area between the two conductive electrodes is 100 nm-50 mu m.
3. The semiconductor gas sensor having a functional region with roughness according to claim 1 or 2, characterized in that the functional layer comprises at least two layers superimposed on each other.
4. The semiconductor gas sensor with a functional region having roughness as claimed in claim 1 or 2, wherein a region of the substrate between the two conductive electrodes is formed with grooves and/or ridges.
5. The semiconductor gas sensor with roughness on the functional region according to claim 4, wherein the cross section of the groove has a geometric shape selected from the group consisting of a U shape, a flat-bottomed U shape, a triangular waveform, and a sawtooth waveform.
6. The semiconductor gas sensor with roughness as claimed in claim 4, wherein the rib is in a grid shape including a plurality of cells, and the plurality of cells are separated from or coupled to each other.
7. The semiconductor gas sensor with roughness as claimed in claim 6, wherein the mesh has a geometrical shape selected from the group consisting of quadrangle, pentagon, hexagon, pentagon.
8. The semiconductor gas sensor with roughness on the functional region according to claim 6, wherein the unit cell has a unit cell wall, and at least a part of the unit cell wall is provided with a vent.
9. The semiconductor gas sensor with roughness on functional area according to claim 4, wherein the rib is in a honeycomb shape including a plurality of cells, and the honeycomb-shaped rib includes at least two honeycomb layers stacked in a staggered manner.
10. The semiconductor gas sensor with roughness functional areas according to claim 4, wherein the rib is formed by a method selected from one of screen printing, sol-gel, hydrothermal synthesis, magnetron sputtering, electron beam evaporation, and chemical vapor deposition; the manufacturing method of the groove is selected from one of electron beam exposure lithography, ion beam etching and nano imprinting.
11. The semiconductor gas sensor with roughness functional regions according to claim 4, wherein the ribs are made of a conductive material or a non-conductive material, the conductive material comprises a metal selected from one of Pt, Au, Ag, Cu, Ni, W and an alloy thin film selected from one of Ni/Cr, Mo/Mn, Cu/Zn, Ag/Pd, Pt/Au, Fe/Co, and the non-conductive material is selected from SiO2、Al2O3、ZrO2MgO and CaO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420374411.2U CN203981623U (en) | 2014-07-08 | 2014-07-08 | Functional areas have the semiconductor gas sensor of roughness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420374411.2U CN203981623U (en) | 2014-07-08 | 2014-07-08 | Functional areas have the semiconductor gas sensor of roughness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203981623U true CN203981623U (en) | 2014-12-03 |
Family
ID=51979055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201420374411.2U Expired - Lifetime CN203981623U (en) | 2014-07-08 | 2014-07-08 | Functional areas have the semiconductor gas sensor of roughness |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203981623U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104048999A (en) * | 2014-07-08 | 2014-09-17 | 苏州纳格光电科技有限公司 | Semiconductor gas sensor with roughness in functional area |
| CN105606661A (en) * | 2016-03-09 | 2016-05-25 | 中国科学院微电子研究所 | Film type MOS gas sensor integrated with nano structure and manufacturing method thereof |
| CN115032241A (en) * | 2022-01-02 | 2022-09-09 | 黄辉 | Low-power-consumption photo-excitation gas sensor and preparation method thereof |
-
2014
- 2014-07-08 CN CN201420374411.2U patent/CN203981623U/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104048999A (en) * | 2014-07-08 | 2014-09-17 | 苏州纳格光电科技有限公司 | Semiconductor gas sensor with roughness in functional area |
| CN105606661A (en) * | 2016-03-09 | 2016-05-25 | 中国科学院微电子研究所 | Film type MOS gas sensor integrated with nano structure and manufacturing method thereof |
| CN105606661B (en) * | 2016-03-09 | 2019-02-12 | 中国科学院微电子研究所 | Film type MOS gas sensor integrated with nano structure and manufacturing method thereof |
| CN115032241A (en) * | 2022-01-02 | 2022-09-09 | 黄辉 | Low-power-consumption photo-excitation gas sensor and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104569061B (en) | Metal-oxide semiconductor (MOS) gas sensor and preparation method thereof | |
| KR101772575B1 (en) | Micro Semiconducting Gas Sensors for Low power operation and its fabrication method | |
| CN107407624B (en) | Sensor for detecting electrically conductive and/or polarizable particles, sensor system, method for operating a sensor, method for manufacturing a sensor of this type, and use of a sensor of this type | |
| CN203981623U (en) | Functional areas have the semiconductor gas sensor of roughness | |
| US8702962B1 (en) | Carbon dioxide gas sensors and method of manufacturing and using same | |
| JP6228018B2 (en) | Particulate matter detection element, particulate matter detection sensor, and method for manufacturing particulate matter detection element | |
| KR20080040670A (en) | Multilayer ceramic nox gas sensor device | |
| Vincenzi et al. | Development of a low-power thick-film gas sensor deposited by screen-printing technique onto a micromachined hotplate | |
| US11987891B2 (en) | Sensor in an internet-of-things | |
| WO2022052392A1 (en) | Side-heating type silicon-based thin film catalytic hydrogen sensor and processing method therefor | |
| CN103543183A (en) | High-sensitivity gas sensor based on microchannel plate three-dimensional structure and production method of high-density gas sensor | |
| Hsueh et al. | A La2O3 nanoparticle SO2 gas sensor that uses a ZnO thin film and Au adsorption | |
| CN114384124B (en) | Anti-drift double-gas-sensitive-film gas sensor | |
| CN104048999B (en) | Functional areas have the semiconductor gas sensor of roughness | |
| CN203616277U (en) | Semiconductor gas sensor | |
| CN113514498A (en) | Common-chip heating array type gas detection microchip and preparation method thereof | |
| CN103698359B (en) | Semiconductor gas sensor | |
| CN103675028B (en) | Semiconductor gas sensor and preparation method thereof | |
| CN104062321B (en) | Functional areas are latticed semiconductor gas sensor | |
| JP3106971B2 (en) | Oxygen sensor | |
| CN203941123U (en) | Functional areas are latticed semiconductor gas sensor | |
| US20210239638A1 (en) | Method for fabrication of mems integrated sensor and sensor thereof | |
| KR100961988B1 (en) | gas sensor using nano material and method for preparing the same | |
| CN106198714B (en) | A kind of gold-plated carbon nano-tube film ionization type methane transducer | |
| CN214734497U (en) | Novel snowflake-like micro-heating plate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20141203 Effective date of abandoning: 20180327 |
|
| AV01 | Patent right actively abandoned |