CN203607374U - A workpiece bench of a laser annealing device - Google Patents
A workpiece bench of a laser annealing device Download PDFInfo
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- CN203607374U CN203607374U CN201320661587.1U CN201320661587U CN203607374U CN 203607374 U CN203607374 U CN 203607374U CN 201320661587 U CN201320661587 U CN 201320661587U CN 203607374 U CN203607374 U CN 203607374U
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- reception
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- laser annealing
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Abstract
The utility model discloses a workpiece bench of a laser annealing device. The workpiece bench of the laser annealing device comprises a workpiece bench plane and more than three reception and sending columns. The reception and sending columns are arranged below the workpiece bench plane. Holes, corresponding to the reception and sending columns, are arranged in the workpiece bench plane. The reception and sending columns can be freely elevated and lowered through the holes in the workpiece bench plane. The workpiece bench of a laser annealing device is characterized in that: an umbrella-shaped reception and sending platform is arranged inside each reception and sending column; the umbrella-shaped reception and sending platforms can automatically expand to be umbrella-shaped planes when the reception and sending columns are raised to the workpiece bench plane, and can automatically withdraw to the reception and sending columns when the reception and sending columns are lowered below the workpiece bench plane. According to the utility model, through the reduction of the diameters of the reception and sending columns, the reduction of the sizes of workpiece perforated holes and the arrangement of the umbrella-shaped reception and sending platforms in the reception and sending columns, the safety of silicon chip transmission is guaranteed, and the area without support of a back surface of a silicon chip during annealing is reduced, so that fragment problems due to that the silicon chip and the workpiece bench are contactless are solved.
Description
Technical field
The utility model relates to integrated circuit and manufactures field, particularly relates to laser annealing apparatus.
Background technology
At IGBT(insulated gate bipolar transistor) etc. in project, need to carry out the ion-activated of silicon chip back side, because the temperature of ion-activated needs is higher, can affect front side of silicon wafer metal line and device performance, therefore can not use conventional boiler tube heating, it is ion-activated that common use backside laser annealing process carries out the back side at present.
What backside laser annealing utilized is that the high temperature that laser produced in moment activates the ion of silicon chip surface, because this high-temperature duration is short, therefore can front not produced and be destroyed and impact.But the silicon chip that carries out backside laser annealing is all the thin slice after attenuate conventionally, in the time that silicon chip is thinner, under moment high temperature, be easy to occur sliver phenomenon, therefore must there be good heat-transfer device and supporting bable tops.
Existing laser annealing process of silicon wafer equipment work-piece platform is in the time of application; generally use vacuum suction design, but in order to realize picking and the function such as prealignment before silicon chip annealing, conventionally can hold at the center of work stage three holes; and be thereunder designed with three and pick post, as shown in Figure 1.For ease of transmission thin slice, the hole at work stage center is generally all more than 10mm, in the time of annealing, opening area just there will be the state of the contactless or vacuum suction of silicon chip back side, simultaneously capacity of heat transmission also with slightly difference of other regions, now, silicon chip is easy to occur sliver phenomenon in the time being annealed to this region.
In the time that work stage center drilling is less than certain limit, when completely contactless or while reducing without vacuum suction area, can greatly improve the fragment rate of silicon chip, but the diameter that reduces to pick post can reduce to pick the contact area of post and silicon chip equally, this for thin silicon sheet, the fragment rate can greatly be increased in silicon chip equally and pick time.
Utility model content
The technical problems to be solved in the utility model is to provide a kind of work stage of laser annealing apparatus, fragment rate when it can reduce silicon chip annealing.
For solving the problems of the technologies described above, the work stage of laser annealing apparatus of the present utility model, comprise that work stage plane and three pick post above, pick post and be arranged on work stage plane below, in work stage plane, correspondence is picked the perforate of post position, picking post can be by the hole free lifting in work stage plane, it is characterized in that, each pick post inside be provided with one can automatic open-close umbrella shape pick platform, this umbrella shape is picked platform can be in the time picking post and be increased in work stage plane, Automatic-expanding becomes a umbrella shape plane, in the time picking post and be reduced to below work stage plane, automatic drawing back is to picking in post.
The utility model is by dwindling the diameter of picking post, reduce workpiece perforate size, and in post, arrange one and can self-jacked umbrella shape pick platform common picking, in guaranteeing chip transmission fail safe, the unsupported area of silicon chip back side while having reduced annealing, thus the fragment rate while having reduced silicon chip annealing solved because of silicon chip and the contactless fragment problems causing of work stage, improve the annealing temperature that silicon chip can bear simultaneously, widened the scope of application of thin slice back process.
Accompanying drawing explanation
Fig. 1 is the common work stage of laser annealing apparatus.Wherein, (A) be the vertical view of work stage; (B) be the schematic diagram that post is picked in three of work stage plane belows.
Fig. 2 is that the umbrella shape that three of laser annealing apparatus work stage of the utility model embodiment pick post and pick post inside is picked platform schematic diagram.
Embodiment
Understand for technology contents of the present utility model, feature and effect being had more specifically, existing in conjunction with illustrated execution mode, details are as follows:
The laser annealing apparatus work stage of the present embodiment offers three apertures in work stage plane.The position in hole can arrange arbitrarily, but to be arranged on symmetrically near the center of work stage plane as good, for 8 cun of work stage, the position in hole is with better apart from work stage planar central 10～700mm, for 12 cun of work stage, the position in hole is with better apart from work stage planar central 25～1200mm.The diameter in hole is generally better between 1～20mm, and diameter is less, is more conducive to thin slice technique.
The below in hole, corresponding to the position in hole, is provided with three and picks post, and the diameter of picking post is slightly less than the diameter in hole (the general smaller 0.1～3mm in comparable hole), is beneficial to pick post lifting and not touching with hole in hole.Each pick post inside be provided with one can automatic open-close umbrella shape pick platform, as shown in Figure 2, this umbrella shape is picked platform can become a plane by Automatic-expanding in the time picking post and be increased in work stage plane, and in the time picking post and be reduced to below work stage plane, automatic drawing back is to picking in post.Planar diameter when umbrella shape is picked platform expansion can, according to the size of bore dia, be selected suitable ratio between 1～30 times of bore dia.Pick on platform and can further design Incision Machine's, the adsorption effect while picking to strengthen in umbrella shape.The material that umbrella shape is picked platform should be selected nonmetal, while contact, silicon chip is produced damage and is broken to avoid umbrella shape to pick platform with silicon chip.Other designs of picking post, can be by the aperture free lifting in work stage all with common to pick post the same.
While carrying out silicon chip annealing process, silicon chip is sent to work stage top by mechanical transfer arm, picks post and rise by the aperture work stage plane from below.In the time picking post emersion work stage surface, umbrella shape is picked platform appliance for releasing single and is split into the chain-wales of flat parachute shape, mechanical arm declines, silicon chip is placed on to umbrella shape to be picked on platform, umbrella shape is picked after platform is accepted silicon chip and is declined, silicon chip is placed in work stage plane, and then umbrella shape is picked platform and is automatically withdrawn into and picks in post, picks post and drops to work stage plane below.Silicon chip is annealed in work stage plane, after annealing finishes, picks post and rises to work stage surface, umbrella shape is picked platform and is risen, give mechanical transfer arm by the silicon chip that completes annealing, then umbrella shape is picked platform and is automatically withdrawn into and picks in post, picks post and drops under work stage.
Claims (8)
1. laser annealing apparatus work stage, comprise that work stage plane and three pick post above, pick post and be arranged on work stage plane below, in work stage plane, correspondence is picked the perforate of post position, picking post can be by the hole free lifting in work stage plane, it is characterized in that, each pick post inside be provided with one can automatic open-close umbrella shape pick platform, this umbrella shape is picked platform can be in the time picking post and be increased in work stage plane, Automatic-expanding becomes a umbrella shape plane, in the time picking post and be reduced to below work stage plane, automatic drawing back is to picking in post.
2. laser annealing apparatus work stage according to claim 1, is characterized in that, the hole in work stage plane is symmetric.
3. laser annealing apparatus work stage according to claim 1 and 2, is characterized in that, 8 cun of work stage, the positional distance work stage center 10～700mm in hole; 12 cun of work stage, the positional distance work stage center 25～1200mm in hole.
4. laser annealing apparatus work stage according to claim 1, is characterized in that, the diameter in the hole in work stage plane is 1～20mm.
5. according to the laser annealing apparatus work stage described in claim 1 or 4, it is characterized in that, pick the diameter of post than the little 0.1～3mm of the diameter in hole.
6. laser annealing apparatus work stage according to claim 1, is characterized in that, planar diameter when umbrella shape is picked platform and launched is bore dia 1～30 times.
7. laser annealing apparatus work stage according to claim 1, is characterized in that, umbrella shape is picked platform and had Incision Machine's.
8. laser annealing apparatus work stage according to claim 1, is characterized in that, the material that umbrella shape is picked platform is nonmetal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320661587.1U CN203607374U (en) | 2013-10-24 | 2013-10-24 | A workpiece bench of a laser annealing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320661587.1U CN203607374U (en) | 2013-10-24 | 2013-10-24 | A workpiece bench of a laser annealing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203607374U true CN203607374U (en) | 2014-05-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320661587.1U Expired - Fee Related CN203607374U (en) | 2013-10-24 | 2013-10-24 | A workpiece bench of a laser annealing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203607374U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377158A (en) * | 2014-11-17 | 2015-02-25 | 上海华力微电子有限公司 | Heating bearing platform of laser annealing machine table |
| CN105355579A (en) * | 2015-12-11 | 2016-02-24 | 清华大学 | Non-enclosed argon protection workpiece stage |
-
2013
- 2013-10-24 CN CN201320661587.1U patent/CN203607374U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104377158A (en) * | 2014-11-17 | 2015-02-25 | 上海华力微电子有限公司 | Heating bearing platform of laser annealing machine table |
| CN105355579A (en) * | 2015-12-11 | 2016-02-24 | 清华大学 | Non-enclosed argon protection workpiece stage |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140521 Termination date: 20151024 |
|
| EXPY | Termination of patent right or utility model |