CN202830162U - Wafer loading platform structure - Google Patents
Wafer loading platform structure Download PDFInfo
- Publication number
- CN202830162U CN202830162U CN201220435143.1U CN201220435143U CN202830162U CN 202830162 U CN202830162 U CN 202830162U CN 201220435143 U CN201220435143 U CN 201220435143U CN 202830162 U CN202830162 U CN 202830162U
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- Prior art keywords
- wafer carrier
- wafer
- thimble
- breach
- base plate
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Abstract
The utility model relates to a semiconductor thin film deposition device, in particular to a wafer loading platform structure. The wafer loading platform structure comprises a wafer loading platform and an external base, wherein a plurality of center holes are arranged in the wafer loading platform and a plurality of clamp mouths are evenly and circumferentially arranged in the edge of the wafer loading platform. The external base comprises a base plate provided with centers corresponding to the center holes. The wafer loading platform is arranged on the base plate of the external base. The centers penetrate through the center holes to support a wafer. The wafer loading platform structure is capable of separating the wafer which is not cooled from a wafer loading platform under a thermal state, reducing cooling time, increasing using rate of a deposition facility, and facilitating collection of the wafer.
Description
Technical field
The utility model relates to the semiconductor film film deposition apparatus, specifically a kind of wafer carrier structure.
Background technology
The principle of film deposition techniques is that wafer is placed vacuum environment, passes into an amount of reactant gases, utilizes physical change and the chemical reaction of gas, forms solid film at crystal column surface.
The Chinese patent relevant with wafer carrier: open day is that August 25, publication number in 2010 are the Chinese patent of CN201562672U, open day is that June 25, publication number in 2003 are the Chinese patent of CN2558077Y, open day is that April 28, publication number in 1999 are the Chinese patent of CN1215226A, open day is that January 6, publication number in 2010 are CN101621020A, open day is September 16, publication number in 2009 Chinese patent that is CN201311921Y etc.Above patent is applicable to the depositing device that mechanical manipulator transmits wafer automatically, but is not suitable for the small-sized depositing device of manual loading wafer.
At present, small size wafer (wafer of placing on the microscope carrier surpasses 1 and is the small size wafer) batch production, adopt wafer carrier as shown in Figure 1, process the placement groove of at least one and diameter wafer coupling in wafer carrier, be placed on respectively wafer in the groove, after depositing operation is finished, treat the wafer cooling, use tweezers gripping wafer.Adopt above-mentioned microscope carrier, the cooling time of wafer is long, and wafer picks up inconvenience.
The utility model content
The purpose of this utility model is to provide a kind of wafer carrier structure.This wafer carrier structure is utilized thimble on the external base and the centre hole on the wafer carrier, with wafer jack-up, can reduce wafer cooling time, and be convenient to pick up wafer with vacuum pad or tweezers.
The purpose of this utility model is achieved through the following technical solutions:
The utility model comprises wafer carrier and the external base, wherein has a plurality of centre holes on the wafer carrier, along the circumferential direction is evenly equipped with a plurality of clipping ports at the edge of wafer carrier; The described external base comprises base plate, is provided with the thimble corresponding with described centre hole at base plate; Described wafer carrier drops on the base plate of the external base, thimble by centre hole pass, supporting wafer.
Wherein: the upper surface of described wafer carrier is provided with at least one groove, and wafer is placed in this groove, and described centre hole is all opened in groove; All have three centre holes that are triangularly arranged in each groove, the thimble on the corresponding base plate of centre hole in each groove also is triangularly arranged; Described centre hole is through hole, and the hole wall of its underpart is cone surface; The edge of described wafer carrier is evenly equipped with a plurality of breach, and this breach and described clipping port interval arrange; Described base plate is provided with the pin corresponding with described breach; Described breach is semi-cylindrical, arranges vertically, and namely the height of breach is identical with the height of wafer carrier; Described pin is cylindric, and wafer carrier drops on the external base, and this pin leans against on the semi-cylindrical of breach; The inscribed circle diameter of described pin is greater than the inscribed circle diameter of breach; Described pin is positioned at the periphery of thimble, near the edge of base plate; The height of described pin is greater than the thickness sum of height and the base plate of thimble; The diameter of described thimble is less than the diameter of centre hole, and the height of thimble is greater than the thickness of wafer carrier.
Advantage of the present utility model and positively effect are:
1. the utility model can separate wafer under uncolled state with the wafer carrier under hot, reduces cooling time, increases the rate of utilization of depositing device.
2. the utility model vacuum pad easy to use or tweezers pick up wafer.
3. the utility model can accurately be located by breach and pin.
4. the utility model is simple in structure, and is with low cost.
Description of drawings
Fig. 1 is the structural representation of existing wafer carrier;
Fig. 2 is the structural representation (take a wafer as example) of the utility model wafer carrier;
Fig. 3 is the diagrammatic cross-section of centre hole among Fig. 2;
Fig. 4 is the structural representation of the utility model external base;
Fig. 5 is the synoptic diagram of placing wafer microscope carrier on the external base;
Wherein: 1 is wafer carrier, and 11 is the wafer groove, and 12 is centre hole, and 13 is breach, and 14 is clipping port, and 2 is the external base, and 21 is thimble, and 22 is pin, and 23 is base plate, and 3 for picking and placeing the instrument of wafer carrier, and 4 are wafer (being shown as transparent).
Embodiment
The utility model is described in further detail below in conjunction with accompanying drawing.
Shown in Fig. 2～4, the utility model comprises wafer carrier 1 and the external base 2, and wafer carrier 1 is rosette, and material can be 6061 aluminium alloys; The groove that the upper surface of wafer carrier 1 is provided with at least one groove 11(present embodiment is one), wafer 4 is placed in this groove 11; Have a plurality of centre holes 12 on the wafer carrier 1, all centre holes 12 are all opened in groove 11, and the centre hole 12 in each groove 11 is three, is triangularly arranged; Centre hole 12 is through hole, and the hole wall of its underpart is cone surface, and namely the top of centre hole 12 axial sections is rectangle, and the bottom is isosceles trapezoid.Along the circumferential direction be evenly equipped with a plurality of clipping ports 14 and a plurality of breach 13 at the edge of wafer carrier 1, breach 13 is arranged with clipping port 14 intervals, respectively three of the clipping port 14 of present embodiment and breach 13.Breach 13 is semi-cylindrical, arranges vertically, and namely the height of breach 13 is identical with the height of wafer carrier 1.
The external base 2 comprises base plate 23, is respectively equipped with the thimble 21 that pin 22 that quantity equates with breach 13 and quantity equate with centre hole 12 on the base plate 23, and pin 22 is positioned at the periphery of thimble 21, near the edge of base plate 23, and each pin 22 all corresponding breach 13; In order to locate wafer carrier 1, in situation that cannot see thimble 21 (sight line is blocked by wafer carrier), make thimble 21 can waltz through centre hole 12, the height of pin 22 is greater than the thickness sum of height and the base plate 23 of thimble 21.Thimble 21 on the centre hole 12 corresponding base plates 23 in each groove 11 also is triangularly arranged, and the diameter of thimble 21 is less than the diameter of centre hole 12; The height of thimble 21 is greater than the thickness of wafer carrier 1, so that jack-up wafer 4.Respectively three on the thimble 21 of present embodiment, pin 22, pin 22 is cylindric, when wafer carrier 1 drops on the external base 2, thimble 21 by centre hole 12 pass, with wafer 4 jack-up, 22 on pin leans against on the semi-cylindrical of breach 13, and the inscribed circle diameter of pin 22 is greater than the inscribed circle diameter of breach 13.
As shown in Figure 5, during use, be clamped in the clipping port 14 with the instrument 3 that picks and places wafer carrier, wafer carrier 1 is proposed the top of the external base 2 from processing chamber, aim at the position of three breach 13 with three pins 22 of the external base 2 of microscope carrier 1, gently wafer carrier 1 is put on the external base 2, the thimble 21 on the base 2 passes the centre hole 12 on the wafer carrier 1, with wafer 4 jack-up.Treat wafer 4 coolings, pick up wafer 4 with vacuum pad or tweezers.
Claims (10)
1. a wafer carrier structure is characterized in that: comprise wafer carrier (1) and the external base (2), wherein have a plurality of centre holes (12) on the wafer carrier (1), along the circumferential direction be evenly equipped with a plurality of clipping ports (14) at the edge of wafer carrier (1); The described external base (2) comprises base plate (23), is provided with the thimble (21) corresponding with described centre hole (12) at base plate (23); Described wafer carrier (1) drops on the base plate (23) of the external base (2), thimble (21) by centre hole (12) pass, supporting wafer (4).
2. by wafer carrier structure claimed in claim 1, it is characterized in that: the upper surface of described wafer carrier (1) is provided with at least one groove (11), and wafer (4) is placed in this groove (11), and described centre hole (12) is all opened in groove (11).
3. by wafer carrier structure claimed in claim 2, it is characterized in that: all have three centre holes that are triangularly arranged (12) in each groove (11), the thimble (21) on the corresponding base plate of centre hole (23) in each groove (11) also is triangularly arranged.
4. by claim 1,2 or 3 described wafer carrier structures, it is characterized in that: described centre hole (12) is through hole, and the hole wall of its underpart is cone surface.
5. by claim 1,2 or 3 described wafer carrier structures, it is characterized in that: the edge of described wafer carrier (1) is evenly equipped with a plurality of breach (13), and this breach (13) arranges with described clipping port (14) interval; Described base plate (23) is provided with the pin (22) corresponding with described breach (13).
6. by wafer carrier structure claimed in claim 5, it is characterized in that: described breach (13) is semi-cylindrical, arranges vertically, and namely the height of breach (13) is identical with the height of wafer carrier (1); Described pin (22) is cylindric, and wafer carrier (1) drops on the external base (2), and this pin (22) leans against on the semi-cylindrical of breach (13).
7. by wafer carrier structure claimed in claim 6, it is characterized in that: the inscribed circle diameter of described pin (22) is greater than the inscribed circle diameter of breach (13).
8. by wafer carrier structure claimed in claim 5, it is characterized in that: described pin (22) is positioned at the periphery of thimble (21), near the edge of base plate (23).
9. by wafer carrier structure claimed in claim 5, it is characterized in that: the height of described pin (22) is greater than the thickness sum of height and the base plate (23) of thimble (21).
10. by claim 1,2 or 3 described wafer carrier structures, it is characterized in that: the diameter of described thimble (21) is less than the diameter of centre hole (12), and the height of thimble (21) is greater than the thickness of wafer carrier (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220435143.1U CN202830162U (en) | 2012-08-29 | 2012-08-29 | Wafer loading platform structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201220435143.1U CN202830162U (en) | 2012-08-29 | 2012-08-29 | Wafer loading platform structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202830162U true CN202830162U (en) | 2013-03-27 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201220435143.1U Expired - Lifetime CN202830162U (en) | 2012-08-29 | 2012-08-29 | Wafer loading platform structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202830162U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105648509A (en) * | 2014-11-12 | 2016-06-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Electroplating clamp compatible with single wafers of multiple sizes |
| CN111235551A (en) * | 2020-01-20 | 2020-06-05 | 北京北方华创微电子装备有限公司 | Susceptor for epitaxial apparatus and epitaxial growth apparatus |
| CN116855892A (en) * | 2023-09-05 | 2023-10-10 | 上海陛通半导体能源科技股份有限公司 | Deposition method of high-yield AlSi or AlSiCu film |
-
2012
- 2012-08-29 CN CN201220435143.1U patent/CN202830162U/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105648509A (en) * | 2014-11-12 | 2016-06-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Electroplating clamp compatible with single wafers of multiple sizes |
| CN105648509B (en) * | 2014-11-12 | 2019-02-01 | 中国科学院苏州纳米技术与纳米仿生研究所 | More size compatibility single-wafer electroplating clamps |
| CN111235551A (en) * | 2020-01-20 | 2020-06-05 | 北京北方华创微电子装备有限公司 | Susceptor for epitaxial apparatus and epitaxial growth apparatus |
| CN111235551B (en) * | 2020-01-20 | 2022-05-27 | 北京北方华创微电子装备有限公司 | Susceptor for epitaxial apparatus and epitaxial growth apparatus |
| CN116855892A (en) * | 2023-09-05 | 2023-10-10 | 上海陛通半导体能源科技股份有限公司 | Deposition method of high-yield AlSi or AlSiCu film |
| CN116855892B (en) * | 2023-09-05 | 2023-12-08 | 上海陛通半导体能源科技股份有限公司 | Deposition method of high-yield AlSi or AlSiCu film |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 110168 no.900 Shuijia, Hunnan District, Shenyang City, Liaoning Province Patentee after: Tuojing Technology Co.,Ltd. Address before: Hunnan Shenyang 110168 Liaoning province Xinyuan street, No. 1 Patentee before: SHENYANG PIOTECH Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130327 |
|
| CX01 | Expiry of patent term |