CN203589023U - High-power UVLED chip integration module - Google Patents
High-power UVLED chip integration module Download PDFInfo
- Publication number
- CN203589023U CN203589023U CN201320774132.0U CN201320774132U CN203589023U CN 203589023 U CN203589023 U CN 203589023U CN 201320774132 U CN201320774132 U CN 201320774132U CN 203589023 U CN203589023 U CN 203589023U
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- China
- Prior art keywords
- support
- wafer
- wafers
- utility
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Led Device Packages (AREA)
Abstract
The utility model discloses a high-power UVLED chip integration module which comprises a support and several wafers connected on the support. The chip integration module also comprises quartz glass packaged on the support. The wafers are divided into several wafer groups which are parallelly arranged on the support. The wafers in each wafer group are connected with adjacent wafers to form a series connection. By the utilization of the quartz glass for packaging, the module provided by the utility model has advantages of high light transmittance and high temperature resistance, and yellowing, atomization and carbonization problems of silica gel packaging are solved. The wafers are integrated and packaged, thus increasing optical power intensity.
Description
Technical field
The utility model relates to curing technology, more particularly, relates in particular to the integrated chip module of a kind of high-power UVLED.
Background technology
Solidifying of current printing industry is mainly that application UV mercury lamp is realized, but due to mercury lamp have not energy-conservation, the life-span is short, mercurous not environmental protection, produce ozone, temperature high cannot printing thermal raw material, produce harmful ultraviolet light, by UVLED, substituted gradually.It is at present mainly the form of single lamp pearl that UVLED enters China, then applies lamp pearl or junior unit plate is integrated, forms a light-emitting area.Replace mercury lamp to irradiate UV ink, realize solidification effect.
But the integrated problem that has several aspects of lamp pearl:
1, luminous power is not strong, because every lamp pearl is certainly all by support, there are fin and both positive and negative polarity, this Area comparison that has just determined lamp pearl is large, and a lamp pearl is integrated, can only integrated a small amount of lamp pearl in relative areal extent, thus optical density is inadequate, the ultraviolet light sending is strong not, cannot meet the requirement of cured printing ink to light intensity.
2, bottleneck is met in heat radiation, lamp pearl is attached on heating panel, cooling by constant-temperature liquid material again after heating panel, between lamp pearl and heating panel, must there is heat-conducting cream to be fixedly linked, heat could be led away as early as possible, in heat-conducting cream, exist sticker, affected heat-transfer rate, directly affect radiating effect, thereby cause LED light decay serious, affect useful life and the effect of UVLED.
3, have bright spot dark space to produce, integrated because of lamp pearl, luminous point is separated by distant, thereby is again that the luminous UV light scattering out that causes of sphere is inhomogeneous, but has bright spot dark space to produce, and causes the light intensity inconsistency of zones of different, thereby affects result of use.
4, lamp pearl has the phenomenon of xanthochromia, atomization, carbonization to produce, in actual production, since long-term high hot high UV radiation, collection
The lamp pearl becoming just there will be xanthochromia, atomization, carbonization phenomenon after using a period of time, directly affects result of use and life-span.
Utility model content
The purpose of this utility model is for above-mentioned the deficiencies in the prior art, and the integrated chip module of a kind of high-power UVLED that increases luminous power closeness and excellent in heat dissipation effect is provided.
The technical solution of the utility model is achieved in that the integrated chip module of a kind of high-power UVLED, it comprises support and is connected to the some wafers on support, described integrated chip module also comprises the quartz glass being encapsulated on support, described wafer is divided into some wafer set and is set in parallel on support, and the wafer in each wafer set is connected with adjacent wafer and forms series connection.
Described support adopts copper material.
The utility model also comprises by described integrated chip module the quartz glass being encapsulated on support, described wafer is divided into some wafer set and is set in parallel on support, wafer in each wafer set is connected with adjacent wafer and forms series connection, the utility model adopts the support of copper material, is conducive to good heat radiating; Utilize quartz glass encapsulation, light transmittance is high, high temperature resistant and solved silica gel packaging flavescence and become the problem of atomization carbonization; Wafer integration packaging, can increase like this luminous power closeness.
Accompanying drawing explanation
Below in conjunction with the embodiment in accompanying drawing, the utility model is described in further detail, but do not form any restriction of the present utility model.
Fig. 1 is the structural representation of the utility model integrated chip module.
In figure: support 1, wafer 2, quartz glass 3.
Embodiment
Consult shown in Fig. 1, the utility model discloses the integrated chip module of a kind of high-power UVLED, and it comprises support 1, is connected to the some wafers 2 on support 1 and is encapsulated in the quartz glass 3 on support 1.
Described support 1 adopts copper material, adopts the fine copper sheet that 5mm is thick, is beneficial to like this good heat radiating.
Described wafer 2 is divided into some wafer set and is set in parallel on support 1.Wafer 2 in each wafer set is connected with adjacent wafer 2 and forms series connection.Adopt full-automatic die bond machine, neat wafer 2 being fixed on support 1, the gold thread of recycling automatic wire bonding machine first gets up wafer and adjacent wafer tandem, then by gold thread, the two ends of wafer set is connected on support.The utility model, by wafer integration packaging, can increase luminous power closeness.
Described quartz glass 3 utilizes special package technique to be encapsulated on support 1, has avoided like this wafer and gold thread oxidized, has also avoided traditional silica gel packaging flavescence to become the drawback of carbonization and non-refractory.
The utility model is based on wafer integrated metal glass for bonding encapsulation technology, can directly allow wafer be connected, and can mount 6-8 wafer in the areal extent of a lamp pearl, dwindles to greatest extent the distance of wafer and wafer, thereby makes luminous power reach maximum.In identical light-emitting area, luminous power can be original more than 5 to 7 times.Can meet the light irradiation intensity of UV ink solidification needs.Directly isothermal liquid is cooling for this integrated chip module, has reduced lamp pearl and has been mounted on the heat conduction link on heating panel, radiating effect is improved greatly, thereby improved result of use and the life-span of UVLED.The utility model light is even, and because luminous point is flat luminous and near apart, scattering out is exactly a UV light-emitting area very uniformly, and result of use is splendid.Because what use is the above quartz packaged of ability 1000 degree, thereby avoided xanthochromia, the atomization of single lamp pearl, the phenomenon of carbonization to occur, can long-life effective use UVLED.
Claims (2)
1. the integrated chip module of a high-power UVLED, it comprises support and is connected to the some wafers on support, it is characterized in that: described integrated chip module also comprises the quartz glass being encapsulated on support, described wafer is divided into some wafer set and is set in parallel on support, and the wafer in each wafer set is connected with adjacent wafer and forms series connection.
2. the integrated chip module of high-power UVLED as claimed in claim 1, is characterized in that: described support adopts copper material.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320774132.0U CN203589023U (en) | 2013-11-28 | 2013-11-28 | High-power UVLED chip integration module |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201320774132.0U CN203589023U (en) | 2013-11-28 | 2013-11-28 | High-power UVLED chip integration module |
Publications (1)
Publication Number | Publication Date |
---|---|
CN203589023U true CN203589023U (en) | 2014-05-07 |
Family
ID=50586891
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN201320774132.0U Expired - Fee Related CN203589023U (en) | 2013-11-28 | 2013-11-28 | High-power UVLED chip integration module |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN203589023U (en) |
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2013
- 2013-11-28 CN CN201320774132.0U patent/CN203589023U/en not_active Expired - Fee Related
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140507 Termination date: 20201128 |