CN203573968U - Igbt module - Google Patents
Igbt module Download PDFInfo
- Publication number
- CN203573968U CN203573968U CN201320652532.4U CN201320652532U CN203573968U CN 203573968 U CN203573968 U CN 203573968U CN 201320652532 U CN201320652532 U CN 201320652532U CN 203573968 U CN203573968 U CN 203573968U
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- dbc substrate
- igbt module
- chip
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- Expired - Lifetime
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- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000012212 insulator Substances 0.000 claims description 12
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000009514 concussion Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model provides an IGBT module. The IGBT module comprises a DBC substrate, at least one chip, a housing, electrodes and lead wires; the chips are fixedly arranged on the upper surface of the DBC substrate; the housing covers the upper parts of the chips and the upper part of the DBC substrate; the electrodes are fixedly arranged on the upper surface of the housing; and one end of each lead wire is connected to the corresponding electrode, and the other ends of the lead wires are connected to the chips. Compared with an existing IGBT module, the IGBT module provided by the utility model is free of a structure, i.e., a base, so that heat generated by the chips can only be transmitted and radiated just through one layer of medium, i.e., the DBC substrate, heat-radiation efficiency is improved thus, and the chips are protected; and, because the base is omitted, the size is reduced, and the cost is lowered.
Description
Technical field
The utility model relates to power semiconductor modular field, relates in particular to a kind of IGBT module.
Background technology
IGBT(Insulated Gate Bipolar Transistor, insulated gate bipolar transistor) be the compound power electronic device of one that the mid-80 comes out, from structure, say, be equivalent to one by MOSFET(Metal Oxide Semiconductor Field Effect Transistor, Metal-oxide-semicondutor field-effect transistor) the BJT(Bipolar Junction Transistor of thick base that drives, bipolar junction transistor), the quick response of the existing MOSFET of IGBT, high input impedance, Heat stability is good, the simple characteristic of drive circuit, also the current density that possesses BJT is high, on-state voltage drop is low, withstand voltage high characteristic, be widely used in power electronic equipment.
Fig. 1 is the sectional structure chart of a kind of IGBT module of providing of prior art, and with reference to figure 1, described IGBT module comprises copper pedestal 11, is welded on the multiple DBC(Direct Bonding Cooper on copper pedestal 11; Cover copper ceramic substrate) substrate 12, be welded on the chip 13 on DBC substrate 12, cover the plastic casing 14 of described chip 13, DBC substrate 12 and copper pedestal 11 upper surfaces, be fixedly installed on the electrode 15 of described plastic casing 14 tops and be electrically connected the lead-in wire 16 of described electrode 15 and chip 13.When using, by bolt (not shown), described IGBT module is fixed on radiator 18, so that the heat in time chip 13 being produced distributes by radiator 17, thereby play the effect of protecting chip.
There is the deficiency of the following aspects in the IGBT module that prior art provides:
(1) caloric requirement that chip 13 produces just can distribute through the transmission of DBC substrate 12, copper pedestal 11 two layer medium, thereby the not high chip area temperature that causes of heat transfer efficiency sharply rises, and high temperature can cause the hydraulic performance decline of chip 13, so even can cause for a long time chip 13 to lose efficacy;
(2) owing to having DBC substrate 12, copper pedestal 11 two layer medium, can cause IGBT module bulky, cost is higher.
Utility model content
The utility model one of is intended to solve the problems of the technologies described above at least to a certain extent or at least provides a kind of useful business to select.For this reason, the purpose of this utility model is to propose a kind of IGBT module, adopts described IGBT module not only can protect chip, and reduced volume, reduces costs.
According to IGBT module of the present utility model, comprise DBC substrate; Chip, described chip comprises at least one, described chip is fixedly installed on the upper surface of described DBC substrate; Shell, described shell covers the top of described chip, DBC substrate; Electrode, described electrode is fixedly installed on described upper surface of outer cover; And lead-in wire, described lead-in wire one end connects described electrode, and the other end connects described chip.
IGBT module of the present utility model has been saved this structure of base compared with the existing, thereby makes the heat that chip produces only by this one deck medium of DBC substrate, can be transmitted and be distributed, thereby has improved radiating efficiency, has protected chip; Owing to saving base, dwindle volume simultaneously, reduced cost.
In addition, the IGBT module above-mentioned according to the utility model, can also have following additional technical characterictic:
Described shell also covers the sidepiece of described DBC substrate.
Described IGBT module also comprises the insulator being filled in the cavity that described shell and described chip, DBC substrate surround.
Described IGBT module also comprises the radiator that is fixedly installed on described DBC substrate below.
The lower surface of described radiator is fixedly installed multiple the first thermal columns.
Described radiator and described DBC substrate are integrally formed.
The lower surface of described DBC substrate is fixedly installed multiple the second thermal columns.
Multiple described the second thermal columns are evenly distributed in the lower surface of described DBC substrate.
Described the second thermal column is top fuller shape or cylindrical or cube shaped or terrace with edge shape.
Multiple described the second thermal columns and DBC substrate are integrally formed.
IGBT module of the present utility model has been saved this structure of base compared with the existing, thereby makes the heat that chip produces only by this one deck medium of DBC substrate, can be transmitted and be distributed, thereby has improved radiating efficiency, has protected chip; Owing to saving base, dwindle volume simultaneously, reduced cost.
Additional aspect of the present utility model and advantage in the following description part provide, and part will become obviously from the following description, or recognize by practice of the present utility model.
Accompanying drawing explanation
Above-mentioned and/or additional aspect of the present utility model and advantage accompanying drawing below combination is understood becoming the description of embodiment obviously and easily, wherein:
Fig. 1 is the profile of an IGBT module of the prior art;
Fig. 2 is the profile of the IGBT module of the first embodiment of the present utility model;
Fig. 3 is the enlarged drawing at A place in Fig. 2;
Fig. 4 is the profile of the IGBT module of the second embodiment of the present utility model;
Fig. 5 is the profile of the IGBT module of the 3rd embodiment of the present utility model;
Fig. 6 is the profile of the IGBT module of the 4th embodiment of the present utility model;
Fig. 7 is the profile of the IGBT module of the 5th embodiment of the present utility model;
Fig. 8 is the profile of the IGBT module of the 6th embodiment of the present utility model;
Fig. 9 is the structure chart of a kind of shape of multiple the second thermal columns in Fig. 8;
Figure 10 is the profile of the IGBT module of the 7th embodiment of the present utility model; And
Figure 11 is the structure chart of the another kind of shape of multiple the second thermal columns in Figure 10.
Embodiment
Describe embodiment of the present utility model below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Below by the embodiment being described with reference to the drawings, be exemplary, be intended to for explaining the utility model, and can not be interpreted as restriction of the present utility model.
Fig. 2 is the profile of the IGBT module of the first embodiment of the present utility model, and Fig. 3 is the enlarged drawing at A place in Fig. 2, and with reference to figure 2-Fig. 3, a kind of IGBT module that the utility model provides, comprises DBC substrate 12; Chip 13, described chip 13 comprises one or more, described chip 13 is welded on the upper surface of described DBC substrate 12 by scolding tin (not shown); Shell 14, described shell 14 is generally plastic casing, and described shell 14 covers the top of described chip 13, DBC substrate 12; Electrode 15, described electrode 15 is fixedly installed on the upper surface of described shell 14; And lead-in wire 16, described lead-in wire 16 one end connect described electrode 15, and the other end connects described chip 13.IGBT module of the present utility model has been saved this structure of base compared with the existing, thereby makes the heat that chip 13 produces only by DBC substrate 12 these one deck media, can be transmitted and be distributed, thereby has improved radiating efficiency, has protected chip 13; Owing to saving base, dwindle volume simultaneously, reduced cost.
Fig. 4 is the profile of the IGBT module of the second embodiment of the present utility model, with reference to figure 4, the shell 14 of described IGBT module not only covers the top of described chip 13 and DBC substrate 12, also cover the sidepiece of described DBC substrate 12, be top and the sidepiece that described shell 14 covers described DBC substrate 12, thereby only the bottom of described DBC substrate 12 exposed to described shell 14.Described shell 14 covers top and the sidepiece of DBC substrate 12, thereby DBC substrate 12 is fixed in shell 14 securely, prevents that DBC substrate 12 from coming off from shell 14.
Fig. 5 is the profile of the IGBT module of the 3rd embodiment of the present utility model, and with reference to figure 5, described IGBT module comprises DBC substrate 12; Chip 13, described chip 13 comprises one or more, described chip 13 is welded on the upper surface of described DBC substrate 12 by scolding tin (not shown); Shell 14, described shell 14 covers top and the sidepiece of described chip 13, DBC substrate 12; Electrode 15, described electrode 15 is fixedly installed on the upper surface of described shell 14; Lead-in wire 16, described lead-in wire 16 one end connect described electrode 15, and the other end connects described chip 13; And insulator 17, described insulator 17 is filled in the cavity that described shell 14 and described chip 13, DBC substrate 12 surround, and described insulator 17 is generally silica gel.By filling insulator 17 in the cavity surrounding at described shell 14 and chip 13, DBC substrate 12, thereby make described chip 13 and shell 14 electric insulations, can also prevent the concussion of DBC substrate 12 and/or chip 13 simultaneously, protection chip 13.
Fig. 6 is the profile of the IGBT module of the 4th embodiment of the present utility model, and with reference to figure 6, described IGBT module comprises DBC substrate 12; Chip 13, described chip 13 comprises one or more, described chip 13 is welded on the upper surface of described DBC substrate 12 by scolding tin (not shown); Shell 14, described shell 14 covers top and the sidepiece of described chip 13, DBC substrate 12; Electrode 15, described electrode 15 is fixedly installed on the upper surface of described shell 14; Lead-in wire 16, described lead-in wire 16 one end connect described electrode 15, and the other end connects described chip 13; Insulator 17, described insulator 17 is filled in the cavity that described shell 14 and described chip 13, DBC substrate 12 surround; And radiator 18, described radiator 18 is fixedly installed on the below of described DBC substrate 12.Described radiator 18 is transmitted and is distributed by DBC substrate 12 for the heat that chip 13 is produced, thus protection chip 13.
Fig. 7 is the profile of the IGBT module of the 5th embodiment of the present utility model, and with reference to figure 7, described IGBT module comprises DBC substrate 12; Chip 13, described chip 13 comprises one or more, described chip 13 is welded on the upper surface of described DBC substrate 12 by scolding tin (not shown); Shell 14, described shell 14 covers top and the sidepiece of described chip 13, DBC substrate 12; Electrode 15, described electrode 15 is fixedly installed on the upper surface of described shell 14; Lead-in wire 16, described lead-in wire 16 one end connect described electrode 15, and the other end connects described chip 13; Insulator 17, described insulator 17 is filled in the cavity that described shell 14 and described chip 13, DBC substrate 12 surround; Radiator 18, described radiator 18 is fixedly installed on the below of described DBC substrate 12; And first thermal column 19, described the first thermal column 19 comprises multiple, multiple described the first thermal columns 19 are fixedly installed on the lower surface of described radiator 18.By be fixedly installed multiple the first thermal columns 19 at the lower surface of radiator 18; the heat producing according to chip described in heat transfer effect 13 is delivered to multiple described the first thermal columns 19 by DBC substrate 12, radiator 18; thereby heat can be distributed in time; guarantee that chip 13 is operated at suitable temperature, has protected chip 13.
In concrete enforcement, described radiator 18 is integrally formed with described DBC substrate 12.In process of production, described radiator 18, multiple described the first thermal column 19 and DBC substrate 12 are integrally formed, described radiator 18 is fixedly installed on the lower surface of DBC substrate 12, multiple described the first thermal columns 19 are fixedly installed on the lower surface of radiator 18, not only Stability Analysis of Structures, and reduce costs.
In concrete enforcement, described the first thermal column 19 can present various shapes, for example, be top fuller shape, cylindrical, cube shaped, terrace with edge shape etc.In the present embodiment, described the first thermal column 19 is preferably cylindrical.
Fig. 8 is the profile of the IGBT module of the 6th embodiment of the present utility model, Fig. 9 is the structure chart of a kind of shape of multiple the second thermal columns in Fig. 8, Figure 10 is the profile of the IGBT module of the 7th embodiment of the present utility model, Figure 11 is the structure chart of the another kind of shape of multiple the second thermal columns in Figure 10, with reference to figure 8-Figure 11, described IGBT module comprises DBC substrate 12; Chip 13, described chip 13 comprises one or more, described chip 13 is welded on the upper surface of described DBC substrate 12 by scolding tin (not shown); Shell 14, described shell 14 covers top and the sidepiece of described chip 13, DBC substrate 12; Electrode 15, described electrode 15 is fixedly installed on described shell 14 upper surfaces; Lead-in wire 16, described lead-in wire 16 one end connect described electrode 15, and the other end connects described chip 13; Insulator 17, described insulator 17 is filled in the cavity that described shell 14 and described chip 13, DBC substrate 12 surround; And second thermal column 20, described the second thermal column 20 comprises multiple, multiple described the second thermal columns 20 are fixedly installed on the lower surface of described DBC substrate 12.IGBT module of the present utility model is by being fixedly installed multiple the second thermal columns 20 at the lower surface of DBC substrate 12, the heat that described chip 13 produces only just can directly be distributed by DBC substrate 12 and multiple described the second thermal column 20, the radiating efficiency that has further improved chip 13, has reduced cost.
In concrete enforcement, multiple described the second thermal columns 20 are evenly distributed in the lower surface of described DBC substrate 12, that is to say that each the second thermal column 20 is identical or roughly the same with the spacing of other the second thermal columns 20 adjacent one another are.IGBT module of the present utility model is by being arranged to multiple described the second thermal columns 20 to be evenly distributed in the lower surface of described DBC substrate 12; thereby the heat that described chip 13 produces can be distributed by multiple described the second thermal column 20 Transmit evenlies, protected chip.
In concrete enforcement, described the second thermal column 20 can present various shapes, for example, be top fuller shape, cylindrical, cube shaped, terrace with edge shape etc.With reference to figure 9, Figure 11, Fig. 9 is the embodiment that multiple described second thermal column 20 of IGBT module of the present utility model is top fuller shape, and Figure 11 is the cylindrical embodiment of multiple described the second thermal column 20 of IGBT module of the present utility model.In the utility model, described the second thermal column 20 is preferably cylindrical.
In concrete enforcement, multiple described the second thermal columns 20 are integrally formed with DBC substrate 12.In process of production, described DBC substrate 12 is integrally formed with multiple described the second thermal column 20 that is positioned at DBC substrate 12 lower surfaces, not only Stability Analysis of Structures, and reduce costs.
IGBT module of the present utility model has been saved this structure of base compared with the existing, thereby makes the heat that chip 13 produces only by DBC substrate 12 these one deck media, can be transmitted and be distributed, thereby has improved radiating efficiency, has protected chip 13; Owing to saving base, dwindle volume simultaneously, reduced cost.
In the description of this specification, the description of reference term " embodiment ", " some embodiment ", " example ", " concrete example " or " some examples " etc. means to be contained at least one embodiment of the present utility model or example in conjunction with specific features, structure, material or the feature of this embodiment or example description.In this manual, the schematic statement of above-mentioned term is not necessarily referred to identical embodiment or example.And specific features, structure, material or the feature of description can be with suitable mode combination in any one or more embodiment or example.
Although illustrated and described embodiment of the present utility model above, be understandable that, above-described embodiment is exemplary, can not be interpreted as restriction of the present utility model, those of ordinary skill in the art can change above-described embodiment in the situation that not departing from principle of the present utility model and aim in scope of the present utility model, modification, replacement and modification.
Claims (10)
1. an IGBT module, is characterized in that, comprising:
DBC substrate;
Chip, described chip comprises at least one, described chip is fixedly installed on the upper surface of described DBC substrate;
Shell, described shell covers the top of described chip, DBC substrate;
Electrode, described electrode is fixedly installed on described upper surface of outer cover; And
Lead-in wire, described lead-in wire one end connects described electrode, and the other end connects described chip.
2. IGBT module as claimed in claim 1, is characterized in that, described shell also covers the sidepiece of described DBC substrate.
3. IGBT module as claimed in claim 2, is characterized in that, also comprises the insulator being filled in the cavity that described shell and described chip, DBC substrate surround.
4. IGBT module as claimed in claim 2 or claim 3, is characterized in that, also comprises the radiator that is fixedly installed on described DBC substrate below.
5. IGBT module as claimed in claim 4, is characterized in that, the lower surface of described radiator is fixedly installed multiple the first thermal columns.
6. IGBT module as claimed in claim 5, is characterized in that, described radiator and described DBC substrate are integrally formed.
7. IGBT module as claimed in claim 2 or claim 3, is characterized in that, the lower surface of described DBC substrate is fixedly installed multiple the second thermal columns.
8. IGBT module as claimed in claim 7, is characterized in that, multiple described the second thermal columns are evenly distributed in the lower surface of described DBC substrate.
9. IGBT module as claimed in claim 8, is characterized in that, described the second thermal column is top fuller shape or cylindrical or cube shaped or terrace with edge shape.
10. IGBT module as claimed in claim 9, is characterized in that, multiple described the second thermal columns and DBC substrate are integrally formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320652532.4U CN203573968U (en) | 2013-10-23 | 2013-10-23 | Igbt module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320652532.4U CN203573968U (en) | 2013-10-23 | 2013-10-23 | Igbt module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203573968U true CN203573968U (en) | 2014-04-30 |
Family
ID=50541682
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320652532.4U Expired - Lifetime CN203573968U (en) | 2013-10-23 | 2013-10-23 | Igbt module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203573968U (en) |
-
2013
- 2013-10-23 CN CN201320652532.4U patent/CN203573968U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191226 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140430 |
|
| CX01 | Expiry of patent term |