CN111244047A - Double-sided heat dissipation full-bridge power module based on GaN device - Google Patents

Double-sided heat dissipation full-bridge power module based on GaN device Download PDF

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CN111244047A
CN111244047A CN202010081992.0A CN202010081992A CN111244047A CN 111244047 A CN111244047 A CN 111244047A CN 202010081992 A CN202010081992 A CN 202010081992A CN 111244047 A CN111244047 A CN 111244047A
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copper layer
gan
copper
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bridge
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CN111244047B (en
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李冰洋
王康平
朱弘铿
杨旭
王来利
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Xian Jiaotong University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits

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Abstract

The invention discloses a double-sided heat dissipation full-bridge power module based on a GaN device, which is formed by radiating heat by a double-sided ceramic substrate and forming a full-bridge circuit, wherein the full-bridge circuit is formed by two half-bridge circuits; each half-bridge circuit comprises two GaN tube cores and a power bus driving capacitor Cbus(ii) a Power bus driving capacitor CbusOne end of is connected with VbusThe other end of the GaN tube is connected with GND, the two GaN tube cores are respectively connected with corresponding driving chips, and each driving chip is provided with a driving bus decoupling capacitor Cdri. The invention has compact and light structure, and can effectively improve the power density; the heat dissipation performance of the GaN power module can be greatly improved, and the parasitic inductance in the GaN full-bridge power module is reduced.

Description

Double-sided heat dissipation full-bridge power module based on GaN device
Technical Field
The invention belongs to the technical field of power electronic power module design, and particularly relates to a double-sided heat dissipation full-bridge power module based on a GaN device.
Background
With the development of science and technology, the performance of the traditional silicon-based (Si) power device gradually reaches the theoretical upper limit, and the application requirement of the power converter cannot be met more and more. The wide-bandgap semiconductor gallium nitride (GaN) power device has the characteristics of low on-resistance, low parasitic capacitance, high switching speed and the like, can effectively improve the efficiency and the working frequency of the power converter, remarkably reduce the volume of the power converter, improve the power density, meet the development requirements of the power converter on the aspects of high efficiency, light weight, high power density and the like, and has wide application prospects.
However, since the power density of converters based on GaN devices is much greater than that of Si devices, but the volume of GaN devices at the same power level is much smaller than that of Si devices, and the thermal conductivity of GaN materials is lower than that of Si materials, GaN devices have to face serious heat dissipation problems. Meanwhile, due to the characteristics of high switching speed, low threshold voltage, small safety margin of grid voltage and the like of the GaN device, the GaN device is sensitive to the abnormal parasitic parameters of common source inductance, drain inductance and the like in the circuit. These problems not only increase the difficulty of GaN device application and design cost, but also severely limit the performance advantages of GaN devices.
In order to improve the working performance of GaN devices, the conventional solutions are mainly classified into two types:
1. in a single-sided PCB mode, the method can achieve the aim of effectively reducing key parasitic parameters in the circuit by optimizing circuit layout, but the heat dissipation problem of GaN becomes more serious due to extremely low thermal conductivity of PCB insulating materials;
2. the method for the single-side DBC ceramic substrate utilizes good heat dissipation performance of the ceramic substrate as a heat dissipation path, can effectively improve heat dissipation performance, but only comprises one heat dissipation path, a used GaN device comprises packaging thermal resistance, the heat dissipation performance is limited by the packaging thermal resistance, and meanwhile, due to poor wiring precision of the DBC ceramic substrate, parasitic parameters in a circuit are increased;
3. according to the method for adding the flexible PCB to the single-sided DBC ceramic substrate, due to the fact that the flexible PCB is added, parasitic parameters of a driving loop of a GaN device can be effectively reduced, but the parasitic parameters of a power loop are large, and the problem of heat dissipation still exists.
Therefore, in order to fully exert the advantages of the GaN device, it is necessary to improve the heat dissipation performance of the GaN device as much as possible and to properly process the parasitic parameters introduced into the circuit.
Disclosure of Invention
The technical problem to be solved by the present invention is to provide a double-sided heat dissipation full-bridge power module based on a GaN device, which can effectively improve the heat dissipation performance of the GaN device, reduce the key parasitic parameters in the circuit, and fully exert the advantages of the GaN device.
The invention adopts the following technical scheme:
a double-sided heat dissipation full-bridge power module based on a GaN device is characterized in that a double-sided ceramic substrate dissipates heat and forms a full-bridge circuit, and the full-bridge circuit comprises two half-bridge circuits; each half-bridge circuit comprises two GaN tube cores and a power bus driving capacitor Cbus(ii) a Power bus driving capacitor CbusOne end of is connected with VbusThe other end of the GaN tube is connected with GND, the two GaN tube cores are respectively connected with corresponding driving chips, and each driving chip is provided with a driving bus decoupling capacitor Cdri。
Concretely, two half-bridge circuits are symmetrically arranged on the DPC ceramic substrate at the bottom and comprise a first half-bridge circuit and a second half-bridge circuit, the DPC ceramic substrate at the top is connected above the first half-bridge circuit and the second half-bridge circuit, and a power bus drives a capacitor CbusSymmetrically arranged at two sides of the bottom DPC ceramic substrate.
Furthermore, a first excess control copper filling and a third excess control copper filling are respectively arranged on two sides of the DPC ceramic substrate at the bottom, a second excess control copper filling is arranged at the center of the DPC ceramic substrate at the bottom, and a first GaN tube core and a second GaN tube core are arranged on the DPC ceramic substrate at intervals between the second excess control copper filling and the third excess control copper filling; and a third GaN tube core and a fourth GaN tube core are arranged on the bottom DPC ceramic substrate between the first over-control copper filling and the second over-control copper filling at intervals, and second ceramic is arranged among the first over-control copper filling, the second over-control copper filling and the third over-control copper filling.
Furthermore, a first driving circuit, a second driving circuit, a third driving circuit and a fourth driving circuit are arranged on the DPC ceramic substrate at intervals, and the first driving circuit, the second driving circuit, the third driving circuit and the fourth driving circuit are correspondingly connected with the first GaN tube core, the second GaN tube core, the third GaN tube core and the fourth GaN tube core.
Furthermore, the top surface of the bottom DPC ceramic substrate is provided with a first GND copper layer and a first V copper layer in sequencebus1Copper layer, SW1 copper layer, second GND copper layer, SW2 copper layer, Vbus2The power bus decoupling capacitors on two sides of the copper layer and the third GND copper layer are respectively connected with the first GND copper layer and the Vbus1Copper layer and Vbus2The copper layer is connected with the third GND copper layer; the first driving circuits are respectively connected with Vbus1The copper layer is connected with the SW1 copper layer, the second driving circuit is respectively connected with the SW1 copper layer and the second GND copper layer, the third driving circuit is respectively connected with the second GND copper layer and the SW2 copper layer, and the fourth driving circuit is respectively connected with the SW copper layer and the V copper layerbusThe copper layers are connected.
Further, the drain and source of the first GaN die are soldered to V and V, respectivelybus1The copper layer is electrically connected to the SW copper layer, and the top surface of the first GaN die is electrically connected to the SW1 copper layer through solder, the second copper layer and the first copper pillar; the drain and source of the second GaN die are electrically connected to the SW1 copper layer and the second GND copper layer, respectively, by solder, and the top surface of the second GaN die is electrically connected to the second GND copper layer by solder, the third copper layer, and the second copper pillar.
Furthermore, the first driving circuit, the second driving circuit, the third driving circuit and the fourth driving circuit respectively comprise a driving bus decoupling capacitor, a driving chip and a VdriThe copper layer, the PWM copper layer, the fourth GND copper layer, the driving copper layer and the soldering tin, and the driving chip is arranged on the driving copper layer.
Furthermore, the power supply and the driving signal required by the driving circuit are VdriThe copper layer, the PWM copper layer and the fourth GND copper layer are connected in, and the power input and the input are carried out through the first GND copper layer and the first GND copper layerbus1Copper layer, SW1 copper layer, second GND copper layer, SW2 copper layer, Vbus2The copper layer is connected with the third GND copper layer.
Furthermore, a first copper column, a second copper column and a third copper column are arranged among the first GaN tube core, the second GaN tube core, the third GaN tube core and the fourth GaN tube core at intervals.
Specifically, the top DPC ceramic substrate includes, from top to bottom, a first copper layer, a second copper layer, a third copper layer, and a fourth copper layer in sequence, with first ceramic disposed between the second copper layer, the third copper layer, and the fourth copper layer.
Compared with the prior art, the invention has at least the following beneficial effects:
the invention relates to a double-sided heat dissipation full-bridge power module based on a GaN device, which comprises an upper heat dissipation path and a lower heat dissipation path, wherein the total heat resistance is half of that of single-sided heat dissipation, and the heat dissipation effect is doubled; a GaN tube core is adopted, a GaN packaging thermal resistance is not included in a module radiating path, and the radiating performance is not limited by the GaN packaging thermal resistance; parasitic inductance of the power loop can be effectively reduced, the oscillation phenomenon of voltage and current in the switching-on and switching-off processes is reduced, and overvoltage and overcurrent conditions of the GaN tube core are avoided; the packaging parasitic inductance of the GaN device is reduced, and the loop parasitic inductance of the power module is further reduced; parasitic inductance of the driving circuit can be effectively reduced, and the condition of mistaken turning-on of the GaN tube core is avoided; the upper ceramic substrate and the lower ceramic substrate of the module are connected through the copper columns, so that the working stability of the GaN tube core is improved; the module forms a basic full bridge circuit, and the universality is strong.
Furthermore, in order to improve the heat dissipation performance of the GaN device, two ceramic substrates are adopted for heat dissipation, the two ceramic substrates are respectively placed on the upper surface and the lower surface of the GaN device, and the GaN device is directly and electrically connected with the ceramic substrates through soldering tin. Because a heat dissipation path is added in the double-sided heat dissipation mode compared with the single-sided heat dissipation mode, the heat resistance from the shell of the GaN device to the environment is almost reduced to half of that of the single-sided heat dissipation mode.
Furthermore, in order to reduce the incrustation thermal resistance of the GaN device, the GaN tube core is directly adopted, at the moment, the heat dissipation performance of the power module is further improved due to the reduction of the packaging thermal resistance of the GaN device, and meanwhile, the loop parasitic inductance of the power module is further reduced due to the reduction of the packaging parasitic inductance of the GaN device.
Further, to reduce power loop parasitic inductance, a power bus decoupling capacitor is integrated into the GaN power module. The characteristic of high wiring precision of the DPC ceramic substrate is utilized, an upper layer and a lower layer are adopted for wiring the power loop, and parasitic inductance of the power loop is effectively reduced.
Furthermore, in order to reduce the parasitic inductance of the GaN device loop and improve the heat dissipation performance of the GaN device, a DPC ceramic substrate is adopted for wiring. Compared with a DBC (dielectric ceramic) ceramic substrate, the DPC ceramic substrate has high wiring precision and can meet the requirement of a driving circuit, and the parasitic inductance of the driving circuit can be effectively reduced in a power module by integrating the driving circuit.
Furthermore, in order to improve the stability of the GaN tube core, the source electrode of the GaN tube core is electrically connected with the top surface of the GaN tube core through a copper column, and meanwhile, a full-bridge structure is adopted, so that the GaN tube core has universality.
In conclusion, the invention has compact and light structure and can effectively improve the power density; the heat dissipation performance of the GaN power module can be greatly improved, and the parasitic inductance in the GaN full-bridge power module is reduced.
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
Drawings
FIG. 1 is a full bridge circuit topology according to the present invention;
FIG. 2 is a front view of the overall structure of the present invention;
FIG. 3 is a top view of the overall structure of the present invention;
FIG. 4 is a cross-sectional view of the overall structure A-A of the present invention;
FIG. 5 is a top view of a top DPC ceramic substrate of the present invention;
FIG. 6 is a bottom view of the top DPC ceramic substrate of the present invention;
FIG. 7 is a top view of the bottom DPC ceramic substrate of the present invention;
FIG. 8 is a bottom view of the bottom DPC ceramic substrate of the present invention.
Wherein: 101. a top DPC ceramic substrate; 102. a bottom DPC ceramic substrate; 103. a first drive circuit; 104. a second drive circuit; 105. a third drive circuit; 106. a fourth driving circuit; 107. a first half-bridge loop; 108. a second half-bridge loop; 1. a first GaN die; 2. a second GaN die;3. a third GaN die; 4. a fourth GaN die; 5. a first copper pillar; 6. a second copper pillar; 7. a third copper pillar; 8. first copper overfill control; 9. second over-control copper filling; 10. third over-control copper filling; 11. power bus driving capacitor Cbus(ii) a 12. Soldering tin; 13. a first ceramic; 14. a second ceramic; 15. a first GND copper layer; 16.Vbus1A copper layer; SW1 copper layer; 18. a second GND copper layer; SW2 copper layer; 20.Vbus2A copper layer; 21. a third GND copper layer; 22.VdriA copper layer; a PWM copper layer; 24. a fourth GND copper layer; 25. driving the copper layer; 26. a fifth GND copper layer; 27. a first copper layer; 28. a second copper layer; 29. a third copper layer; 30. a fourth copper layer; 31. decoupling capacitor C of drive busdri(ii) a 32. And a driving chip.
Detailed Description
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "one side", "one end", "one side", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1, the invention relates to a double-sided heat dissipation full-bridge power module based on a GaN device, which adopts a double-sided ceramic substrate to dissipate heat and form a full-bridge circuit, wherein the full-bridge circuit topology specifically comprises:
the full-bridge circuit comprises two half-bridge circuits, each half-bridge circuit comprises two switching tubes Q1 and Q2 or Q3 and Q4 and a power bus decoupling capacitor Cbus(ii) a Each switch tube is driven by a driving chip and comprises a driving bus decoupling capacitor Cdri(ii) a Switching tubes Q1-Q4 actually employ a first GaN tube core 1, a second GaN tube core 2, a third GaN tube core 3, and a fourth GaN tube core 4.
Referring to fig. 2, fig. 3 and fig. 4, a dual-sided heat dissipation full-bridge power module based on a GaN device according to the present invention includes:
top DPC ceramic substrate 101, bottom DPC ceramic substrate 102, first GaN die 1, second GaN die 2, third GaN die 3, fourth GaN die 4, power bus drive capacitor CbusA first driving circuit 103, a second driving circuit 104, a third driving circuit 105 and a fourth driving circuit 106.
A first GaN tube core 1, a second GaN tube core 2, a third GaN tube core 3 and a fourth GaN tube core 4 are arranged on a bottom DPC ceramic substrate 102 at intervals, a top DPC ceramic substrate 101 is arranged above the first GaN tube core 1, the second GaN tube core 2, the third GaN tube core 3 and the fourth GaN tube core 4, a first copper column 5, a second copper column 6 and a third copper column 7 are arranged between the first GaN tube core 1, the second GaN tube core 2, the third GaN tube core 3 and the fourth GaN tube core 4 at intervals, and a power bus driving capacitor CbusThe two sides of the DPC ceramic substrate 102 are provided with a second over-control copper filling 9, the two sides of the DPC ceramic substrate 102 are corresponding to the power bus driving capacitor CbusA first over-control copper filling 8 and a third over-control copper filling 10 are respectively arranged, a first half-bridge loop 107 is formed between the second over-control copper filling 9 and the third over-control copper filling 10, and the first over-control copper filling 8 and the second over-control copper filling 8And a second half-bridge loop 108 is formed between the over-control copper filling 9.
The first GaN tube core 1, the second GaN tube core 2, the third GaN tube core 3 and the fourth GaN tube core 4 are correspondingly connected with a first driving circuit 103, a second driving circuit 104, a third driving circuit 105 and a fourth driving circuit 106, wherein the first driving circuit 103, the second driving circuit 104, the third driving circuit 105 and the fourth driving circuit 106 respectively comprise a driving bus decoupling capacitor 31, a driving chip 32 and a VdriThe copper layer 22, the PWM copper layer 23, the fourth GND copper layer 24, the copper driver layer 25, and the solder 12, and the driver chip 32 is disposed on the copper driver layer 25.
Referring to fig. 5 and 6, the top DPC ceramic substrate 101 includes a first copper layer 27, a second copper layer 28, a third copper layer 29, a fourth copper layer 30, and a ceramic 13, the top surface of the top DPC ceramic substrate 101 is covered by the first copper layer 27, the bottom surface of the top DPC ceramic substrate 101 includes the second copper layer 28, the third copper layer 29, and the fourth copper layer 30, and in conjunction with fig. 2, the first ceramic 13 is in the middle of the top DPC ceramic substrate 101.
Referring to FIGS. 7 and 8, the top surface of the bottom DPC ceramic substrate 102 includes a first GND copper layer 15, Vbus1Copper layer 16, SW1 copper layer 17, second GND copper layer 18, SW2 copper layer 19, Vbus2Copper layer 20 and third GND copper layer 21, and only fifth GND copper layer 26 is present on the bottom surface of bottom DPC ceramic substrate 102. Referring to fig. 2, the middle of the bottom DPC ceramic substrate 102 includes the second ceramic 14, the first copper overfill 8, the second copper overfill 9, and the third copper overfill 10.
In the power module, a plurality of power bus decoupling capacitors 11 are respectively disposed at two sides of the power module to form two half-bridge power bus decoupling capacitors C in fig. 1busOn both sides of the center of fig. 2 are a first half-bridge circuit 107 and a second half-bridge circuit 108, respectively, corresponding to the two half-bridge circuits of fig. 1.
The first half-bridge loop 107 includes a power bus bar decoupling capacitor 11, a first GND copper layer 15, a third overfill copper 10, a fifth GND copper layer 26, a second overfill copper 9, a second GND copper layer 18, a second GaN die 2, a SW1 copper layer 17, a first GaN die 1, and a Vbus1 A copper layer 16.
The drain and source of the first GaN die 1 are soldered 12 and V, respectivelybus1 Copper layer 16 and SW1 copper layer 17 are electrically connected, while the top surface of first GaN die 1 is electrically connected to SW1 copper layer 17 by solder 12, second copper layer 28 and first copper pillar 5.
The drain and source of the second GaN die 2 are electrically connected to the SW1 copper layer 17 and the second GND copper layer 18, respectively, by solder 12, while the top surface of the second GaN die 2 is electrically connected to the second GND copper layer 18 by solder 12, the third copper layer 29 and the second copper pillar 6.
The power bus decoupling capacitor 11 is connected with the first GND copper layer 15 and the first GND copper layer V through the soldering tin 12bus1The copper layer 16 is electrically connected.
The second half-bridge loop 108 is symmetrical with the first half-bridge loop 107 about the center of the second overfill copper 9 and shares the second overfill copper 9.
The power supply required for driving and the driving signal are VdriCopper layer 22, PWM copper layer 23 and fourth GND copper layer 24 are connected in, and power is input and output through first GND copper layer 15, Vbus1Copper layer 16, SW1 copper layer 17, second GND copper layer 18, SW2 copper layer 19, Vbus2Copper layer 20 and third GND copper layer 21.
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of the embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations. Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention relates to a double-sided heat dissipation full-bridge power module based on a GaN device, which is divided into four parts: the structure of the GaN power module is different from other GaN power modules which only comprise a PCB substrate or a DBC ceramic substrate and a PCB substrate.
The GaN module with a PCB substrate structure has poor heat dissipation performance due to the small thermal conductivity of the PCB insulating material. In order to make the GaN device work stably, a packaged GaN device is needed, which not only increases the area of the power loop, but also makes the power loop include a package inductor, and finally the parasitic inductance of the power loop is usually above 1.1 nH. The GaN module comprises a DBC ceramic substrate and a GaN module comprising a DBC ceramic substrate and a PCB substrate, the heat dissipation performance is improved due to high heat conductivity of the ceramic substrate, but due to poor wiring accuracy of the DBC ceramic substrate, only packaged GaN devices can be adopted, and the final parasitic inductance of a power loop is usually more than 2 nH.
According to the invention, double-sided ceramic is adopted for heat dissipation, the heat dissipation performance is doubled compared with that of single-sided ceramic verified by ANSYS, and meanwhile, the parasitic inductance of the power loop can be reduced to below 1nH through testing, and the inductance of the driving turn-on loop and the inductance of the turn-off loop are extracted by ANSYS to be 1.7nH and 2.4nH respectively. Compared with the three structures, the heat dissipation performance of the invention is greatly improved, and the key parasitic parameters of the circuit are effectively reduced.
In conclusion, the radiating performance of the GaN power module can be greatly improved by adopting the structural arrangement mode, and the parasitic inductance in the GaN full-bridge power module is reduced.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.

Claims (10)

1. A double-sided heat dissipation full-bridge power module based on a GaN device is characterized in that a double-sided ceramic substrate dissipates heat and forms a full-bridge circuit, and the full-bridge circuit comprises two half-bridge circuits; each half-bridge circuit comprises two GaN tube cores and a power bus driving capacitor Cbus(ii) a Power bus driving capacitor CbusOne end of (A)Connection VbusThe other end of the GaN tube is connected with GND, the two GaN tube cores are respectively connected with corresponding driving chips, and each driving chip is provided with a driving bus decoupling capacitor Cdri。
2. The GaN-device-based double-sided heat dissipation full-bridge power module of claim 1, wherein two half-bridge circuits are symmetrically arranged on the bottom DPC ceramic substrate (102) and comprise a first half-bridge circuit (107) and a second half-bridge circuit (108), the top DPC ceramic substrate (101) is connected above the first half-bridge circuit (107) and the second half-bridge circuit (108), and a power bus drives a capacitor CbusSymmetrically arranged on both sides of the bottom DPC ceramic substrate (102).
3. The GaN-device-based double-sided heat dissipation full-bridge power module according to claim 2, wherein a first overcontrol copper filling (8) and a third overcontrol copper filling (10) are respectively arranged on two sides of the bottom DPC ceramic substrate (102), a second overcontrol copper filling (9) is arranged at the center of the bottom DPC ceramic substrate (102), and a first GaN tube core (1) and a second GaN tube core (2) are arranged on the bottom DPC ceramic substrate (102) between the second overcontrol copper filling (9) and the third overcontrol copper filling (10) at intervals; third GaN tube cores (3) and fourth GaN tube cores (4) are arranged on the bottom DPC ceramic substrate (102) between the first over-control copper filling (8) and the second over-control copper filling (9) at intervals, and second ceramics (14) are arranged among the first over-control copper filling (8), the second over-control copper filling (9) and the third over-control copper filling (10).
4. The GaN-device-based double-sided heat dissipation full-bridge power module according to claim 3, wherein a first driving circuit (103), a second driving circuit (104), a third driving circuit (105) and a fourth driving circuit (106) are arranged on the bottom DPC ceramic substrate (102) at intervals, and the first driving circuit (103), the second driving circuit (104), the third driving circuit (105) and the fourth driving circuit (106) are correspondingly connected with the first GaN die (1), the second GaN die (2), the third GaN die (3) and the fourth GaN die (4).
5. The base of claim 4The double-sided heat dissipation full-bridge power module of the GaN device is characterized in that a first GND copper layer (15) and a first GND copper layer V are sequentially arranged on the top surface of a bottom DPC ceramic substrate (102)bus1Copper layer (16), SW1 copper layer (17), second GND copper layer (18), SW2 copper layer (19), Vbus2A copper layer (20) and a third GND copper layer (21), and power bus decoupling capacitors (11) at two sides and the first GND copper layer (15) and the third GND copper layer (21) respectivelybus1Copper layer (16) and Vbus2The copper layer (20) is connected with the third GND copper layer (21); the first driving circuit (103) is connected to Vbus1The copper layer (16) is connected with the SW1 copper layer (17), the second drive circuit (104) is respectively connected with the SW1 copper layer (17) and the second GND copper layer (18), the third drive circuit (105) is respectively connected with the second GND copper layer (18) and the SW2 copper layer (19), and the fourth drive circuit (106) is respectively connected with the SW (2) copper layer (19) and the V copper layer (19)bus(2)The copper layers (20) are connected.
6. The GaN-device-based double-sided heat dissipation full-bridge power module of claim 5, wherein the drain and source of the first GaN die (1) are soldered to Vbus1The copper layer (16) and the SW (1) copper layer (17) are electrically connected, and the top surface of the first GaN die (1) is electrically connected with the SW1 copper layer (17) through soldering tin, a second copper layer (28) and a first copper pillar (5); the drain and source of the second GaN die (2) are electrically connected to the SW1 copper layer (17) and the second GND copper layer (18) by solder, respectively, and the top surface of the second GaN die (2) is electrically connected to the second GND copper layer (18) by solder, the third copper layer (29), and the second copper pillar (6).
7. The GaN-device-based double-sided heat dissipation full-bridge power module according to claim 5, wherein the first driving circuit (103), the second driving circuit (104), the third driving circuit (105) and the fourth driving circuit (106) respectively comprise a driving bus decoupling capacitor (31), a driving chip (32), and a VdriThe driving chip (32) is arranged on the driving copper layer (25).
8. The GaN-device-based double-sided heat dissipation full-bridge power module of claim 7Wherein the power supply required by the driving circuit and the driving signal are VdriThe copper layer (22), the PWM copper layer (23) and the fourth GND copper layer (24) are connected, and the power input and the input are carried out through the first GND copper layer (15) and the Vbus1Copper layer (16), SW1 copper layer (17), second GND copper layer (18), SW2 copper layer (19), Vbus2The copper layer (20) is connected to a third GND copper layer (21).
9. The GaN-device-based double-sided heat dissipation full-bridge power module according to claim 3, wherein a first copper pillar (5), a second copper pillar (6) and a third copper pillar (7) are arranged at intervals among the first GaN tube core (1), the second GaN tube core (2), the third GaN tube core (3) and the fourth GaN tube core (4).
10. The GaN-device-based double-sided heat-dissipation full-bridge power module according to claim 1, wherein the top DPC ceramic substrate (101) comprises, in order from top to bottom, a first copper layer (27), a second copper layer (28), a third copper layer (29), and a fourth copper layer (30), and the first ceramic (13) is disposed between the second copper layer (28), the third copper layer (29), and the fourth copper layer (30).
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