CN203536723U - Packaging structure of semiconductor laser unit with adjustable wavelength - Google Patents
Packaging structure of semiconductor laser unit with adjustable wavelength Download PDFInfo
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- CN203536723U CN203536723U CN201320516107.2U CN201320516107U CN203536723U CN 203536723 U CN203536723 U CN 203536723U CN 201320516107 U CN201320516107 U CN 201320516107U CN 203536723 U CN203536723 U CN 203536723U
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Abstract
The utility model discloses a packaging structure of a semiconductor laser unit with an adjustable wavelength. The packaging structure includes a TO packaging housing and a TO tube cap, and the TO tube cap is provided with a window sheet. The packaging structure is characterized in that a TEC is disposed in the TO tube cap and on the TO packaging housing, a heat conducting sheet is welded on the TEC, an LD chip is disposed on the heat conducting sheet, and the TEC is further provided with an aspheric collimating lens used for collimating an output light of the LD chip, and a rectangular prism used for changing the direction of the collimated output light by 90 degrees and emitting the changed light along the window sheet. A built-in temperature control TO packaging structure is adopted by the packaging structure of the semiconductor laser unit with the adjustable wavelength, a produced laser beam is outputted after being collimated, the output power can be effectively monitored through a power detection element, the output center wavelength of a laser unit and the wavelength of a channel stated by ITU are identical by disposing an inner temperature control system and a work current, and requirements of laser output power are satisfied. The packaging structure of the semiconductor laser unit with the adjustable wavelength is simple in structure, small in size, low in cost and has a continuous and adjustable wavelength.
Description
Technical field
The utility model patent relates to laser and communication field, relates in particular to a kind of wavelength tuneable semiconductor laser encapsulating structure.
Background technology
Inner in order can normally to work in making transmitter at wavelength division multiplexing (WDM) EPON (PON), the necessary strict conformance of the emission wavelength of light source and optical network path wavelength, and the breadth of spectrum line of emission wavelength is also had to strict requirement; And transmitter adopts the very wide LED light source of emission spectra more in Time Division Multiplexing EPON, its general spectrum width is greater than 5nm.The requirement of the high-precision wavelength control of WDM-PON optical sender light source and breadth of spectrum line makes device fabrication business must strictly control or adopt other technologies to carry out modeling to the operation wavelength of laser to the emission wavelength of laser could meet actual needs.Although the cost of TDM-PON optical sender is lower, under high speed, jumbo broadband services, it has been difficult to meet jumbo demand a few days ago.
Under the drive of large capacity business, a kind of new EPON standard TWDM-PON arises at the historic moment, and TWDM abbreviation itself is the abbreviation in conjunction with TDM time division multiplexing and WDM wavelength division multiplexing, and it is by a plurality of wavelength channels, to pile up the TDM-PON of 10G.
Summary of the invention
The utility model patent object be to provide a kind of simple in structure, size is little, low-cost, the continuously adjustable capsulation structure for semiconductor laser of wavelength.
For reaching described object, the technical scheme that the utility model proposes is: a kind of wavelength tuneable semiconductor laser encapsulating structure, comprise TO package casing, TO pipe cap, described TO pipe cap is provided with a diaphragm, it is characterized in that, on described TO package casing, in TO pipe cap, be provided with a TEC, on TEC, be welded with a conducting strip, described conducting strip is provided with a LD chip, is also provided with one the aspheric collimation lens of the output optical alignment of LD chip and is changed to 90 degree along the right-angle prism of diaphragm outgoing by the output light after collimation on described TEC.
Preferably, be also provided with a photodiode that is used for monitoring the power output of LD chip on described TEC, described photodiode is located in the backward light path of LD chip.
Preferably, described conducting strip is sheet metal or gold plated ceramic sheet.
Further, be also provided with a platform on described TEC, described conducting strip, photodiode, aspheric collimation lens, right-angle prism are located on platform, and described platform is metal platform or ceramic platform.
Further, between described diaphragm and TO pipe cap, the mode by glass sintering is bonded together the two.
Further, between described TO pipe cap and TO package casing, can bond or scolding tin by different temperatures welds together by heat-conducting glue.
Further, on described TO package casing, by glass sintering, be fixed with six roots of sensation PIN pin.
Further, on described TO package casing, be also provided with a thermal component.
Adopt technique scheme, wavelength tuneable semiconductor laser encapsulating structure described in the utility model, the TO encapsulating structure that adopts built-in temperature to control, the laser beam producing is collimation State-output, can to power output, effectively monitor by power detecting element, setting by inner temperature control system and operating current fits like a glove the output center wavelength of laser and the channel wavelength of ITU regulation and meets the requirement of laser output power, and have simple in structure, size is little, the continuous advantage such as adjustable of low-cost, wavelength.
Accompanying drawing explanation
Fig. 1 is described wavelength tuneable semiconductor laser encapsulating structure schematic diagram;
Fig. 2 is described wavelength tuneable semiconductor laser encapsulating structure outside drawing.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be further described.
As shown in Figure 1, LD chip 105 forward light, export light, are transformed into collimating status hot spot after aspheric collimation lens 107, by right-angle prism 108 rears, to changing the surface of 90 degree along vertical TO package casing 101, through diaphragm 109, leave encapsulating structure and outgoing.The backward light of LD chip 105 is directly got on photodiode 106, is used for the power output of monitoring laser.Conducting strip 104(is preferably sheet metal or gold plated ceramic sheet) effect is in order to guarantee that LD emergent light center and non-spherical lens center design in the same horizontal line.Above-mentioned optical element is put in to TEC102 upper surface one by one, or is put in platform 103(metal platform or a ceramic platform) be positioned over again TEC102 upper surface after upper.Finally TEC102 is put in to the upper surface of TO package casing 101.Mode by glass sintering between diaphragm 109 and TO pipe cap 110 is bonded together the two, and then bond by heat-conducting glue with TO package casing 101 or the mode of the welding of the scolding tin by different temperatures combines, form wavelength tuneable semiconductor laser encapsulating structure.
As shown in Fig. 2 wavelength tuneable semiconductor laser encapsulating structure outside drawing, mode by parallel soldering and sealing between TO package casing 101 and TO pipe cap 110 connects and seals, thermal component 111 is the heat radiation that strengthens inner TEC as its effect of a part of package casing, on TO package casing 101, six roots of sensation PIN pin 112 is realized insulation and sealing by glass sintering, and inner each element electrode can be realized the inside and outside electrical connection of encapsulation by mode and six PIN pin 112 of routing mode or welding.
Although specifically show and introduced the utility model in conjunction with preferred embodiment; but those skilled in the art should be understood that; within not departing from the spirit and scope of the present utility model that appended claims limits; the various variations of in the form and details the utility model being made, are protection range of the present utility model.
Claims (9)
1. a wavelength tuneable semiconductor laser encapsulating structure, comprise TO package casing, TO pipe cap, described TO pipe cap is provided with a diaphragm, it is characterized in that, on described TO package casing, in TO pipe cap, be provided with a TEC, on TEC, be welded with a conducting strip, described conducting strip is provided with a LD chip, is also provided with one the aspheric collimation lens of the output optical alignment of LD chip and is changed to 90 degree along the right-angle prism of diaphragm outgoing by the output light after collimation on described TEC.
2. a kind of wavelength tuneable semiconductor laser encapsulating structure according to claim 1, it is characterized in that: on described TEC, be also provided with a photodiode that is used for monitoring the power output of LD chip, described photodiode is located in the backward light path of LD chip.
3. a kind of wavelength tuneable semiconductor laser encapsulating structure according to claim 1, is characterized in that: described conducting strip is sheet metal or gold plated ceramic sheet.
4. a kind of wavelength tuneable semiconductor laser encapsulating structure according to claim 1, is characterized in that: on described TEC, be also provided with a platform, described conducting strip, photodiode, aspheric collimation lens, right-angle prism are located on platform.
5. a kind of wavelength tuneable semiconductor laser encapsulating structure according to claim 4, is characterized in that: described platform is metal platform or ceramic platform.
6. a kind of wavelength tuneable semiconductor laser encapsulating structure according to claim 1, is characterized in that: the mode by glass sintering between described diaphragm and TO pipe cap is bonded together the two.
7. a kind of wavelength tuneable semiconductor laser encapsulating structure according to claim 1, is characterized in that: between described TO pipe cap and TO package casing, can bond or scolding tin by different temperatures welds together by heat-conducting glue.
8. a kind of wavelength tuneable semiconductor laser encapsulating structure according to claim 1, is characterized in that: on described TO package casing, by glass sintering, be fixed with six roots of sensation PIN pin.
9. a kind of wavelength tuneable semiconductor laser encapsulating structure according to claim 1, is characterized in that: on described TO package casing, be also provided with a thermal component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320516107.2U CN203536723U (en) | 2013-08-23 | 2013-08-23 | Packaging structure of semiconductor laser unit with adjustable wavelength |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320516107.2U CN203536723U (en) | 2013-08-23 | 2013-08-23 | Packaging structure of semiconductor laser unit with adjustable wavelength |
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| Publication Number | Publication Date |
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| CN203536723U true CN203536723U (en) | 2014-04-09 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201320516107.2U Expired - Fee Related CN203536723U (en) | 2013-08-23 | 2013-08-23 | Packaging structure of semiconductor laser unit with adjustable wavelength |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201557A (en) * | 2014-08-28 | 2014-12-10 | 青岛海信宽带多媒体技术有限公司 | Packaging structure of adjustable laser device and packaging method therefor |
| CN104752950A (en) * | 2015-04-07 | 2015-07-01 | 王胤 | Laser collaboration temperature control and seal mounting base |
| CN105161973A (en) * | 2015-09-23 | 2015-12-16 | 北京凯普林光电科技有限公司 | Packaging structure and packaging method for fiber coupled semiconductor laser |
| CN111490441A (en) * | 2020-05-21 | 2020-08-04 | 王志杰 | High-bandwidth laser signal light and backlight separation processing technology |
| CN113175629A (en) * | 2021-04-26 | 2021-07-27 | 中国科学院半导体研究所 | Laser lighting system based on perovskite quantum dot phosphor powder |
-
2013
- 2013-08-23 CN CN201320516107.2U patent/CN203536723U/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104201557A (en) * | 2014-08-28 | 2014-12-10 | 青岛海信宽带多媒体技术有限公司 | Packaging structure of adjustable laser device and packaging method therefor |
| CN104752950A (en) * | 2015-04-07 | 2015-07-01 | 王胤 | Laser collaboration temperature control and seal mounting base |
| CN104752950B (en) * | 2015-04-07 | 2017-07-14 | 王胤 | A kind of collimation temperature control sealed installing seat of laser |
| CN105161973A (en) * | 2015-09-23 | 2015-12-16 | 北京凯普林光电科技有限公司 | Packaging structure and packaging method for fiber coupled semiconductor laser |
| CN105161973B (en) * | 2015-09-23 | 2018-01-16 | 北京凯普林光电科技股份有限公司 | The encapsulating structure and method for packing of a kind of fiber coupled laser diode |
| CN111490441A (en) * | 2020-05-21 | 2020-08-04 | 王志杰 | High-bandwidth laser signal light and backlight separation processing technology |
| CN111490441B (en) * | 2020-05-21 | 2022-04-05 | 王志杰 | High-bandwidth laser signal light and backlight separation processing structure |
| CN113175629A (en) * | 2021-04-26 | 2021-07-27 | 中国科学院半导体研究所 | Laser lighting system based on perovskite quantum dot phosphor powder |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20140409 Termination date: 20170823 |
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| CF01 | Termination of patent right due to non-payment of annual fee |