CN203521436U - BIVP application-based light-transmitting back electrode of thin-film cell - Google Patents
BIVP application-based light-transmitting back electrode of thin-film cell Download PDFInfo
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- CN203521436U CN203521436U CN201320634794.8U CN201320634794U CN203521436U CN 203521436 U CN203521436 U CN 203521436U CN 201320634794 U CN201320634794 U CN 201320634794U CN 203521436 U CN203521436 U CN 203521436U
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- azo layer
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- 239000010409 thin film Substances 0.000 title abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 29
- 239000002184 metal Substances 0.000 claims abstract description 29
- 238000013084 building-integrated photovoltaic technology Methods 0.000 claims description 13
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 238000007639 printing Methods 0.000 claims description 7
- 239000004411 aluminium Substances 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000003475 lamination Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 19
- 238000002834 transmittance Methods 0.000 abstract description 8
- 238000009792 diffusion process Methods 0.000 abstract 1
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 230000009103 reabsorption Effects 0.000 abstract 1
- 230000005540 biological transmission Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 238000005265 energy consumption Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003892 spreading Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 230000029553 photosynthesis Effects 0.000 description 1
- 238000010672 photosynthesis Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02A—TECHNOLOGIES FOR ADAPTATION TO CLIMATE CHANGE
- Y02A30/00—Adapting or protecting infrastructure or their operation
- Y02A30/60—Planning or developing urban green infrastructure
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B10/00—Integration of renewable energy sources in buildings
- Y02B10/10—Photovoltaic [PV]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Abstract
The utility model relates to a building integrated photovoltaic (BIVP) application-based light-transmitting back electrode of a thin-film cell. The light-transmitting back electrode successively comprises an AZO layer I, a metal layer and an AZO layer II from top to bottom; and the thickness of the AZO layer I is 90nm, the thickness of the metal layer (2) is 22nm, and the thickness of the AZO layer II is 60nm. The AZO layer I is used for reflecting the light transmitted through a photoelectric conversion layer back to the photoelectric conversion layer for reabsorption, thereby enhancing the conversion efficiency of the cell; and ohmic contact is formed between the photoelectric conversion layer and the AZO, thereby preventing the diffusion of the metal layer (2) to the photoelectric conversion layer. The metal layer is mainly used for ensuring the good conductivity of the back electrode and improving the short-circuit current density of the cell. And the AZO layer II is used for protecting the metal layer to prolong the service life. When the thickness of the AZO layer I is 90nm, the thickness of the metal layer (2) is 22nm, and the thickness of the AZO layer II is 60nm, the conductivity is 4.36 ohm/square and the light transmittance mean value is 75.3%; and the comprehensive performance of the back electrode is optimum.
Description
Technical field
The utility model relates to technical field of thin-film solar, is specifically related to a kind of hull cell printing opacity back electrode based on BIPV application.
Background technology
BIPV(Building Integrated Photovoltaic) technology is that solar power generation (photovoltaic) product is integrated into architectural technology.According to statistics, building energy consumption accounts for 1/3 of world's total energy consumption, by the biggest market that is following solar energy power generating.BIPV has been not limited only to and Integration of building at present, and country's 12 planning delimited the pattern in photovoltaic Ecological Greenhouse power station for BIPV BIPV demonstrative project.
Amorphous silicon thin-film solar cell not only has that quality is light, the low light level is good, be easy to the feature integrated with construction material, and the main spectrum that amorphous silicon thin-film solar cell generating needs is 600nm, the effective growth effect of shielding of ultraviolet to plant, in the time of generating, guarantee that photosynthesis of plant effectively carries out, and play effective insulation effect.Therefore amorphous silicon thin-film solar cell has significant application advantage in BIPV field.The process route of preparing at present light transmission film solar cell is mainly laser scoring and two kinds of modes of the transparent back electrode of preparation.There is the shortcomings such as complex process, outward appearance is inharmonious, productive temp is long in laser scoring, transparent back electrode not only can overcome the shortcoming of laser scoring, can also, by regulating thicknesses of layers to prepare the hull cell of different light transmittances, therefore prepare the adjustable hull cell of light transmittance most important to the promotion and application of BIPV.
Back electrode of thin film solar cell Main Function absorbs on the one hand unabsorbed long-wave band light being reflected back to photoelectricity conversion layer again, improves the conversion efficiency of battery; As battery electrode, play electric action on the other hand.The general composite back electrode layer structure that adopts transparent conductive oxide film layer, metal in existing technology, as AZO/Al, AZO/Ag/NiCr/Al etc.Such battery structure has advantages of that reflectivity is high, good conductivity, is conducive to improve the conversion efficiency of battery.But also there is obvious shortcoming: because this structure has stronger albedo, the light that battery surface is crossed in transmission seldom, causes the translucent effect of battery poor, has restricted the application of film photovoltaic cell in BIPV field.
Summary of the invention
The utility model, in order to overcome the deficiency of above technology, provides the printing opacity that a kind of production efficiency is high, light transmittance is adjustable back electrode.
The utility model overcomes the technical scheme that its technical problem adopts:
This hull cell printing opacity back electrode based on BIPV application, comprises AZO layer I, metal level and AZO layer II from top to bottom successively, and the thickness of described AZO layer I is 90nm, and the thickness of described metal level 2 is 22nm, and the thickness of described AZO layer II is 60nm.
Above-mentioned metal level 2 is metal aluminium lamination or metallic silver layer.
The beneficial effects of the utility model are: the acting as of AZO layer I is reflected back photoelectricity conversion layer by the light that sees through photoelectric conversion layer and absorbs, increase the conversion efficiency of battery, secondly between photoelectric conversion layer and AZO, form ohmic contact, can also prevent that metal level 2 from spreading to photoelectric conversion layer.The Main Function of metal level has good conductivity for guaranteeing back electrode, improves the short-circuit current density of battery.The effect of AZO layer II is mainly protection metal level, improves useful life.The thickness of AZO layer I is that the thickness of 90nm, metal level is the thickness of 22nm, AZO layer II while being 60nm, and conductivity is that 4.36 Ω/mouth light transmittance averages are 75.3%, and now the combination property of back electrode is best.The conversion efficiency that meets battery can be not too low, can keep higher light transmission again.
Accompanying drawing explanation
Fig. 1 is section structure schematic diagram of the present utility model;
In figure, 1.AZO layer I 2. metal level 3.AZO layer II.
Embodiment
Below in conjunction with 1 pair of the utility model of accompanying drawing, be described further.
This hull cell printing opacity back electrode based on BIPV application, comprise successively AZO layer I 1, metal level 2 and AZO layer II 3 from top to bottom, the thickness of described AZO layer I 1 is 90nm, and the thickness of described metal level 2 is 22nm, and the thickness of described AZO layer II 3 is 60nm.The acting as of AZO layer I 1 is reflected back photoelectricity conversion layer by the light that sees through photoelectric conversion layer and absorbs, increases the conversion efficiency of battery, secondly between photoelectric conversion layer and AZO, forms ohmic contact, can also prevent that metal level 2 from spreading to photoelectric conversion layer.The Main Function of metal level 2 has good conductivity for guaranteeing back electrode, improves the short-circuit current density of battery.The effect of AZO layer II 3 is mainly protection metal level 2, improves useful life.As shown in Table 1 when AZO layer I 1 is 144nm, AZO layer II 3 during for 60nm, sheet resistance average when metal level 2 is respectively metal aluminium lamination or metallic silver layer and light transmittance average.
| AZO layer I (nm) | Metal level | AZO layer II (nm) | Sheet resistance average (Ω/mouth) | Light transmittance average (%) |
| 144 | 22(Ag) | 60 | 6.94 | 72.58 |
| 144 | 22(Al) | 60 | 4.39 | 27.49 |
Table one
Therefore by table one, can draw, the photoelectric comprehensive performance of metallic silver layer is obviously better than aluminium.
| AZO layer I (nm) | Metallic silver layer (nm) | AZO layer II (nm) | Sheet resistance average (Ω/mouth) | Light transmittance average (%) |
| 144 | 12 | 70 | 13.58 | 69.40 |
| 144 | 17 | 60 | 6.53 | 72.58 |
| 144 | 22 | 60 | 4.39 | 74.61 |
| 144 | 24 | 60 | 3.08 | 63.10 |
| 144 | 29 | 60 | 2.48 | 58.11 |
| 72 | 22 | 60 | 4.44 | 72.76 |
| 90 | 22 | 60 | 4.36 | 75.30 |
| 126 | 22 | 60 | 4.28 | 73.47 |
| 54 | 22 | 60 | 4.63 | 74.93 |
| 90 | 22 | 75 | 4.84 | 73.59 |
| 90 | 22 | 45 | 4.35 | 69.37 |
| 90 | 22 | 105 | 4.45 | 65.18 |
Table two
As can be seen from Table II, at AZO layer I 1 and AZO layer II 3 thickness constant in the situation that, the square resistance of combination electrode increases and reduces with the thickness of metallic silver layer, and light transmission first raises with the increase of metallic silver layer thickness and reduces, when metallic silver layer is 22nm, light transmission is best.In this composite back electrode, square resistance can calculate by formula: 1/R=1/RAZO(1)+1/RAg+1/RAZO (2).When Ag layer is thinner, membrane structure is isolated each other island structure, so its conductivity and light transmission are slightly poor.AZO layer I 1 is little on the impact of light transmission.When AZO layer II 3 is 60nm, light transmission is best.In conjunction with the square resistance of back electrode and light transmission, show that the thickness of AZO layer I 1 in composite back electrode is that the thickness of 90nm, metal level 2 is the thickness of 22nm, AZO layer II 3 while being 60nm, the combination property of back electrode is best.
Claims (2)
1. the hull cell printing opacity back electrode based on BIPV application, it is characterized in that: comprise successively AZO layer I (1), metal level (2) and AZO layer II (3) from top to bottom, the thickness of described AZO layer I (1) is 90nm, the thickness of described metal level (2) is 22nm, and the thickness of described AZO layer II (3) is 60nm.
2. the hull cell printing opacity back electrode based on BIPV application according to claim 1, is characterized in that: described metal level (2) is metal aluminium lamination or metallic silver layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320634794.8U CN203521436U (en) | 2013-10-15 | 2013-10-15 | BIVP application-based light-transmitting back electrode of thin-film cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320634794.8U CN203521436U (en) | 2013-10-15 | 2013-10-15 | BIVP application-based light-transmitting back electrode of thin-film cell |
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| CN203521436U true CN203521436U (en) | 2014-04-02 |
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| CN201320634794.8U Expired - Lifetime CN203521436U (en) | 2013-10-15 | 2013-10-15 | BIVP application-based light-transmitting back electrode of thin-film cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140311A (en) * | 2015-07-10 | 2015-12-09 | 福建铂阳精工设备有限公司 | Back electrode, manufacturing method thereof and battery assembly |
| CN111682114A (en) * | 2020-06-16 | 2020-09-18 | 电子科技大学 | Organic photoelectric detector bottom electrode and preparation method and application thereof |
-
2013
- 2013-10-15 CN CN201320634794.8U patent/CN203521436U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105140311A (en) * | 2015-07-10 | 2015-12-09 | 福建铂阳精工设备有限公司 | Back electrode, manufacturing method thereof and battery assembly |
| CN111682114A (en) * | 2020-06-16 | 2020-09-18 | 电子科技大学 | Organic photoelectric detector bottom electrode and preparation method and application thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: HANERGY SOLAR PHOTOVOLTAIC TECHNOLOGY LIMITED Effective date: 20141027 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| C53 | Correction of patent of invention or patent application | ||
| CB03 | Change of inventor or designer information |
Inventor after: Shao Chuanbing Inventor after: Liu Xiaoyu Inventor after: Tian Zi Inventor after: Li Shigang Inventor after: Liu Shengbo Inventor after: Wang Qi Inventor after: Li Jingang Inventor after: Wang Zhiqiang Inventor before: Shao Chuanbing Inventor before: Liu Xiaoyu Inventor before: Tian Zi Inventor before: Li Shigang Inventor before: Liu Shengbo Inventor before: Wang Qi |
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| COR | Change of bibliographic data |
Free format text: CORRECT: INVENTOR; FROM: SHAO CHUANBING LIU XIAOYU TIAN ZI LI SHIGANG LIU SHENGBO WANG QI TO: SHAO CHUANBING LIU XIAOYU TIAN ZI LI SHIGANG LIU SHENGBO WANG QI LI JINGANG WANG ZHIQIANG |
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| TR01 | Transfer of patent right |
Effective date of registration: 20141027 Address after: High tech Zone 251200 Shandong city of Dezhou province Yucheng City revitalization Road hina photovoltaic industrial park Patentee after: SHANDONG YUCHENG HANERGY PHOTOVOLTAIC Co.,Ltd. Patentee after: Hanenergy Solar Photovoltaic Technology Co.,Ltd. Address before: High tech Zone 251200 Shandong city of Dezhou province Yucheng City revitalization Road hina photovoltaic industrial park Patentee before: SHANDONG YUCHENG HANERGY PHOTOVOLTAIC Co.,Ltd. |
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| C56 | Change in the name or address of the patentee |
Owner name: SHANDONG YUCHENG HANERGY THIN FILM SOLAR CO., LTD. Free format text: FORMER NAME: SHANDONG YUCHENG HANERGY PHOTOVOLTAIC CO., LTD. |
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| CP01 | Change in the name or title of a patent holder |
Address after: High tech Zone 251200 Shandong city of Dezhou province Yucheng City revitalization Road hina photovoltaic industrial park Patentee after: SHANDONG YUCHENG HANERGY FILM SOLAR ENERGY CO.,LTD. Patentee after: Hanenergy Solar Photovoltaic Technology Co.,Ltd. Address before: High tech Zone 251200 Shandong city of Dezhou province Yucheng City revitalization Road hina photovoltaic industrial park Patentee before: SHANDONG YUCHENG HANERGY PHOTOVOLTAIC Co.,Ltd. Patentee before: Hanenergy Solar Photovoltaic Technology Co.,Ltd. |
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Effective date of registration: 20190131 Address after: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee after: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. Address before: 251200 Haneng Photovoltaic Industrial Park, Revitalization Avenue, Yucheng High-tech Zone, Dezhou City, Shandong Province Co-patentee before: Hanenergy Solar Photovoltaic Technology Co.,Ltd. Patentee before: SHANDONG YUCHENG HANERGY FILM SOLAR ENERGY CO.,LTD. |
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| TR01 | Transfer of patent right |
Effective date of registration: 20190307 Address after: Room 107, Building 2, Olympic Village Street Comprehensive Office District, Chaoyang District, Beijing Patentee after: HANERGY MOBILE ENERGY HOLDING GROUP Co.,Ltd. Address before: Room 103, Building 2, Office District, Olympic Village, Chaoyang District, Beijing Patentee before: HANERGY PHOTOVOLTAIC TECHNOLOGY Co.,Ltd. |
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Granted publication date: 20140402 |