CN203521408U - 基于镀银铝基板的led光源 - Google Patents
基于镀银铝基板的led光源 Download PDFInfo
- Publication number
- CN203521408U CN203521408U CN201320700886.1U CN201320700886U CN203521408U CN 203521408 U CN203521408 U CN 203521408U CN 201320700886 U CN201320700886 U CN 201320700886U CN 203521408 U CN203521408 U CN 203521408U
- Authority
- CN
- China
- Prior art keywords
- light source
- aluminum substrate
- silver
- led
- led chips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 229910052782 aluminium Inorganic materials 0.000 title claims abstract description 45
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 title claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 31
- 239000004332 silver Substances 0.000 claims abstract description 31
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000741 silica gel Substances 0.000 claims abstract description 8
- 229910002027 silica gel Inorganic materials 0.000 claims abstract description 8
- 239000004411 aluminium Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- 241000218202 Coptis Species 0.000 claims description 8
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 8
- 150000001398 aluminium Chemical class 0.000 claims description 6
- 150000003378 silver Chemical class 0.000 claims description 6
- 230000017525 heat dissipation Effects 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract 6
- 238000000151 deposition Methods 0.000 abstract 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 230000010354 integration Effects 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Abstract
基于镀银铝基板的LED光源，其包括铝基板、LED芯片和荧光硅胶层，该铝基板包括铝底板、沉镍层和镀银层；沉镍层设于该铝底板上，镀银层电镀于该沉镍层上，该铝基板的外缘设有围坝，该围坝高于该镀银层；LED芯片贴装于镀银层上；LED芯片的电极通过金线连接铝底板的接口；该荧光硅胶层填充于该围坝内，并覆盖于该镀银层和LED芯上。本实用新型的LED光源的铝基板设有镀银层，可降低成本，且有效抗氧化。另外，减小了光源热阻，增强了光线反射，有效散热的同时提高了发光效率，并且能使多个LED芯片集成到很小的面积，提高LED芯片的集成度。
Description
技术领域
本实用新型涉及基于镀银铝基板的LED光源。
背景技术
LED光源采用铝基板来散热保证LED芯片发光效果及使用寿命，但传统的铝基板的散热主要是通过铝基板的绝缘层来实现，散热效果较差，且成本高；而且传统的铝基板采用一片LED芯片对应一个固晶点的方式，使用多个LED芯片时，难以集成到很小的面积上。
实用新型内容
针对上述现有技术不足，本实用新型要解决的技术问题是提供一种散热效果好且成本低的基于镀银铝基板的LED光源。
为解决上述技术问题，本实用新型采用以下技术方案：
一种基于镀银铝基板的LED光源，其包括铝基板、LED芯片和荧光硅胶层，该铝基板包括铝底板、沉镍层和镀银层；沉镍层设于该铝底板上，镀银层电镀于该沉镍层上，该铝基板的外缘设有围坝，该围坝高于该镀银层；LED芯片贴装于镀银层上；LED芯片的电极通过金线连接铝底板的接口；该荧光硅胶层填充于该围坝内，并覆盖于该镀银层和LED芯上。
LED芯片与铝基板之间没有绝缘层，形成热电分离结构，降低了热阻，使LED芯片的热量能更快地散出去；镀银层同时提高了光源的光效。
优选地，LED芯片的数量为多个；相邻LED芯片的电极之间通过金线连接。LED芯片之间直接由金线连接，使得LED芯片电极与电极之间直接连接，节约了铝基板的焊盘位置，使多个LED芯片能集成在很小的面积上。
相比现有的抛光铝板，本实用新型的LED光源的铝基板设有镀银层，可降低成本，且有效抗氧化。另外，减小了光源热阻，增强了光线反射，有效散热的同时提高了发光效率，并且能使多个LED芯片集成到很小的面积，提高LED芯片的集成度。
附图说明
图1为本实用新型基于镀银铝基板的LED光源的结构示意图。
图2为图1的LED光源的A方向示意图。
图3为图1的LED光源的铝基板的剖面结构示意图。
具体实施方式
如图1至图3所示，本实用新型的较佳实施方式涉及一种基于镀银铝基板的LED光源，其包括铝基板1、LED芯片2和荧光硅胶层5，该铝基板1包括铝底板11、沉镍层12和镀银层13；沉镍层13设于该铝底板11上，镀银层13电镀于该沉镍层12上，该铝基板1的外缘设有围坝3，该围坝3高于该镀银层13；LED芯片2贴装于镀银层12上；LED芯片2的电极通过金线4连接铝底板的11接口；该荧光硅胶层5填充于该围坝内，并覆盖于该镀银层13和LED芯2上，以使得LED芯片2、金线4藏于荧光胶5的内部，与外界分隔开，并优化LED光源的光效。
LED芯片2的数量为多个；相邻LED芯片2的电极之间也通过金线4连接，得LED芯片电极与电极之间直接连接，节约了铝基板的焊盘位置，使多个LED芯片能集成在很小的面积上。
对本领域的技术人员来说，可根据以上描述的技术方案以及构思，做出其它各种相应的改变以及形变，而所有的这些改变以及形变都应该属于本实用新型权利要求的保护范围之内。
Claims (2)
1.一种基于镀银铝基板的LED光源，其特征在于：其包括铝基板、LED芯片和荧光硅胶层，该铝基板包括铝底板、沉镍层和镀银层；沉镍层设于该铝底板上，镀银层电镀于该沉镍层上，该铝基板的外缘设有围坝，该围坝高于该镀银层；LED芯片贴装于镀银层上；LED芯片的电极通过金线连接铝底板的接口；该荧光硅胶层填充于该围坝内，并覆盖于该镀银层和LED芯上。
2.根据权利要求1所述的基于镀银铝基板的LED光源，其特征在于：LED芯片的数量为多个；相邻LED芯片的电极之间通过金线连接。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320700886.1U CN203521408U (zh) | 2013-11-06 | 2013-11-06 | 基于镀银铝基板的led光源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320700886.1U CN203521408U (zh) | 2013-11-06 | 2013-11-06 | 基于镀银铝基板的led光源 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203521408U true CN203521408U (zh) | 2014-04-02 |
Family
ID=50380295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201320700886.1U Expired - Lifetime CN203521408U (zh) | 2013-11-06 | 2013-11-06 | 基于镀银铝基板的led光源 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203521408U (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916593A (zh) * | 2015-06-02 | 2015-09-16 | 三星半导体(中国)研究开发有限公司 | 封装件和制造封装件的方法 |
| US9741633B2 (en) | 2015-06-02 | 2017-08-22 | Samsung Electronics Co., Ltd. | Semiconductor package including barrier members and method of manufacturing the same |
| WO2020244490A1 (zh) * | 2019-06-03 | 2020-12-10 | 史杰 | 一种光源线路板及低发热led灯泡 |
-
2013
- 2013-11-06 CN CN201320700886.1U patent/CN203521408U/zh not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104916593A (zh) * | 2015-06-02 | 2015-09-16 | 三星半导体(中国)研究开发有限公司 | 封装件和制造封装件的方法 |
| CN106910719A (zh) * | 2015-06-02 | 2017-06-30 | 三星半导体(中国)研究开发有限公司 | 封装件和制造封装件的方法 |
| US9741633B2 (en) | 2015-06-02 | 2017-08-22 | Samsung Electronics Co., Ltd. | Semiconductor package including barrier members and method of manufacturing the same |
| WO2020244490A1 (zh) * | 2019-06-03 | 2020-12-10 | 史杰 | 一种光源线路板及低发热led灯泡 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN203521408U (zh) | 基于镀银铝基板的led光源 | |
| CN205752232U (zh) | 一种cob光模组 | |
| CN204045633U (zh) | 发光二极管板上芯片封装结构 | |
| CN203351667U (zh) | 隔离式cob光源模组 | |
| CN203082797U (zh) | Led光源的镜面铝基板 | |
| CN201910445U (zh) | 一种led封装结构 | |
| CN201893369U (zh) | 一种发光二极管 | |
| CN102544300A (zh) | 一种led封装结构 | |
| CN203103348U (zh) | 具有cob基板结构的led灯源 | |
| CN202871854U (zh) | Led基板结构 | |
| CN202469643U (zh) | 一种无铝基板大功率led灯组 | |
| CN203398158U (zh) | 一种led封装结构 | |
| CN205069686U (zh) | 一种led点状式cob模组 | |
| CN205303506U (zh) | 高光效led光源 | |
| CN102620164A (zh) | 一种无铝基板大功率led灯组及其制备工艺 | |
| CN202501250U (zh) | 一种直接对外壳散热的大功率led光源 | |
| CN204834676U (zh) | 基于镜面铝基板的led光源模块 | |
| CN203377258U (zh) | 一种提高发光效率的双晶贴片led封装结构 | |
| CN203596351U (zh) | 一种led-cob光源 | |
| CN204114805U (zh) | 太阳能led杀虫灯 | |
| CN203398152U (zh) | 一种led | |
| CN203883001U (zh) | 一种白光led封装结构 | |
| CN203628572U (zh) | 一种大功率高散热led灯珠 | |
| AU2013100167A4 (en) | Led circuit board with bowl like cups therein | |
| CN202395031U (zh) | 一种大功率led支架结构 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 510000 Room 201, building A4, No. 11, Kaiyuan Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Silicon energy photoelectric semiconductor (Guangzhou) Co.,Ltd. Address before: 510000 second floor, building A4, No. 11, Kaiyuan Avenue, Science City, Guangzhou high tech Industrial Development Zone, Guangzhou, Guangdong Province Patentee before: GUANGZHOU LEDTEEN OPTOELECTRONICS Co.,Ltd. |
|
| CP03 | Change of name, title or address | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140402 |
|
| CX01 | Expiry of patent term |