CN203455364U - Silicon vibrating-beam accelerometer of high precision temperature measurement structure based on plate-type integration - Google Patents
Silicon vibrating-beam accelerometer of high precision temperature measurement structure based on plate-type integration Download PDFInfo
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- CN203455364U CN203455364U CN201320548882.6U CN201320548882U CN203455364U CN 203455364 U CN203455364 U CN 203455364U CN 201320548882 U CN201320548882 U CN 201320548882U CN 203455364 U CN203455364 U CN 203455364U
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Abstract
The utility model discloses a silicon vibrating-beam accelerometer of a high precision temperature measurement structure based on plate-type integration. An upper layer is a vacuum packaged cover plate, a lower layer is a substrate, and middle layer monocrystalline silicon is provided with an accelerometer mechanical structure. The accelerometer mechanical structure comprises an outer frame, a mass block, two rigidity adjustment assembles, two accelerated speed measuring resonators, two temperature measurement resonators, and four one-level lever amplification mechanisms. The accelerated speed measuring resonators are disposed on an upper end and a lower end of the mass block symmetrically. Ends of the two accelerated speed measuring resonator are connected with the outer frame, and the other ends are connected with output ends of the one-level lever amplification mechanisms through the rigidity adjustment assembles, the one-level lever amplification mechanisms being symmetric in left and right manner. A pivot end of each one-level lever amplification mechanism is connected with the outer frame, and an input end is respectively connected with the mass block. The temperature measurement resonators are symmetrically arranged on two sides of the left side and the right side of the mass block. The outer frame makes the mechanical structure suspend above the lower layer monocrystalline silicon substrate through a fixing base. The silicon vibrating-beam accelerometer improves precision of temperature compensation, and real-time property is good and sensitivity is high.
Description
Technical field
The utility model belongs to the micro-inertia sensor technical field in micro-electromechanical system (MEMS), particularly a kind of silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip.
Background technology
Silicon micro accerometer is typical MEMS inertial sensor, and its research starts from early 1970s, the various ways such as existing condenser type, piezoelectric type, pressure resistance type, thermal convection, tunnel current formula and resonant mode.The unique features of the micro-resonance beam accelerometer of silicon is that its output signal is frequency signal, its accurate digital output can be directly used in complicated digital circuit, there is very high antijamming capability and stability, and removed the inconvenience of other type accelerometer aspect signal transmission from, be directly connected with digital processing unit.U.S. Draper laboratory is to the research of resonance type accelerometer in first place in the world at present, and the micro-mechanical accelerometer of research and development is mainly used in strategic missile, and zero bias stability and constant multiplier stability reach respectively 5 μ g and 3ppm.Therefore silicon micro-resonance type accelerometer has good development prospect.Silicon vibrating beam accelerometer structure is generally comprised of resonance beam and sensitive-mass piece, sensitive-mass piece degree of will speed up is converted to inertial force, inertial force acts on the axial of resonance beam, and the frequency of resonance beam is changed, and by test resonance frequency, extrapolates by measuring acceleration.
Chinese patent 1(Qiu An duckweed, Shi Qin, Su Yan. silicon micro-resonance type accelerometer, Institutes Of Technology Of Nanjing, application number: 2008100255749) disclose a kind of silicon vibrating beam accelerometer structure, this construction machine structure is comprised of mass, resonator and lever amplifying mechanism etc., two resonators are positioned in the middle of mass, adjacent symmetric layout, mass supports by being positioned at its folded beam of four jiaos, has improved stability and the impact resistance of structure.But because mismachining tolerance makes the resonance frequency of two resonators and not exclusively equates, act on two thermal stress on resonator also not identical, cannot eliminate by the mode of Differential Detection the impact of thermal stress; And two resonators of this structure are directly connected with fixed pedestal, forming residual stress and thermal stress are very large on the impact of resonance frequency; Temperature experiment within the scope of full temperature finds, the temperature coefficient of accelerometer frequency is up to 160Hz/ ℃, the temperature coefficient of constant multiplier is 0.67%/℃; In this external test process, find that this accelerometer exists larger electric coupling, when the resonance frequency of two resonators is close, can produces adjacent frequency and disturb, thus the acceleration signal of None-identified effect.
Chinese patent 2(Qiu An duckweed, Shi Qin, Su Yan. silicon micro-resonance type accelerometer, Institutes Of Technology Of Nanjing, the patent No.: the new construction that 201010293127.9) discloses a kind of silicon vibrating beam accelerometer, this structure consists of upper and lower two-layer, upper strata is the accelerometer physical construction being produced on monocrystalline silicon piece, lower floor is the signal lead being produced in glass substrate, physical construction is by mass, outside framework, resonator, the composition such as guiding mechanism and lever amplifying mechanism, mass is positioned in the middle of structure, by four rotational symmetry, roll over beam is connected with outside framework more, stability and the impact resistance of arrangements of accelerometers have been improved, and the sensitivity that has improved to a certain extent accelerometer.Two identical resonators are arranged symmetrically with up and down at mass, greatly reduce electric coupling, and the centre of two resonance beam is connected, has reduced the interference of high order mode.Resonator, lever, guiding mechanism and mass are all connected with fixed pedestal by outside framework, have reduced forming residual stress and operating ambient temperature and have changed the impact on structural vibration frequency of the thermal stress that produces.Temperature experiment within the scope of full temperature finds, the temperature coefficient of this accelerometer frequency is down to 24～25Hz/ ℃ from 160Hz/ ℃ of original structure, has reduced by 84.4%; Due to mismachining tolerance and residual stress distribution inhomogeneous, the temperature coefficient of two resonators is poor is 3～5Hz/ ℃, performance test shows that the zero bias stability of this accelerometer is better than 50 μ g, constant multiplier stability is better than 100ppm.As can be seen here, reducing temperature error is to improve the key of resonance type accelerometer precision.The method that reduces temperature error has reasonable structure design, Optimization Technology and temperature compensation, and wherein temperature compensation precision is subject to the impact of temperature measurement accuracy.At present, temp measuring method adopts platinum resistance or the outside temperature survey of accelerometer inside conventionally, and these two kinds of methods are subject to the impact of thermograde and temperature time delay, and temperature measurement accuracy is not high, thereby temperature compensation precision is not high, cannot meet the requirement of high precision resonance type accelerometer.
Utility model content
The purpose of this utility model is to provide the silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip that a kind of real-time is good, temperature coefficient is low, and this silicon vibrating beam accelerometer is highly sensitive, good stability, strong shock resistance and be easy to realize high-acruracy survey.
The technical solution that realizes the utility model object is: a kind of silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip, by upper, middle and lower-ranking monocrystalline silicon, formed, upper strata monocrystalline silicon is the accelerometer Vacuum Package cover plate that is furnished with signal input and output line, lower floor's monocrystalline silicon is the substrate of accelerometer, on the monocrystalline silicon of middle level, be manufactured with accelerometer physical construction, and accelerometer physical construction is connected with lower floor monocrystalline silicon by fixed pedestal, the mass that described accelerometer physical construction comprises outside framework and is positioned at outside framework, two rigidity are adjusted assembly, two measuring acceleration resonators, two thermometric resonators and four one-level lever amplifying mechanisms, wherein mass is positioned at integrally-built centre, first, two measuring acceleration resonators are arranged symmetrically in the upper of mass, lower two ends, the upper end of this first measuring acceleration resonator is connected with outside framework, assembly and symmetrical first is adjusted by the first rigidity in the lower end of the first measuring acceleration resonator, the output terminal of two one-level lever amplifying mechanisms is connected, the lower end of the second measuring acceleration resonator is connected with outside framework, assembly and the symmetrical the 3rd is adjusted by the second rigidity in the upper end of the second measuring acceleration resonator, the output terminal of four one-level lever amplifying mechanisms is connected, the support end of each one-level lever amplifying mechanism is all connected with outside framework, and the input end of each one-level lever amplifying mechanism is connected with mass by a corresponding straight beam respectively, and mass is connected with outside framework by the beam of folding more than four, first and second thermometric resonator is arranged symmetrically in the arranged on left and right sides of mass, and these two thermometric resonator place straight lines are vertical to y with sensitive axes, and the two ends of each thermometric resonator are all connected with outside framework, outside framework makes the physical construction part of accelerometer unsettled on the monocrystalline substrate part of lower floor by 12 with the centrosymmetric fixed pedestal of mass.
Compared with prior art, its remarkable advantage is the utility model: (1) two thermometric resonator is positioned at the mass left and right sides, and thermometric resonator provides the real time temperature of accelerometer inside; Two points for measuring temperature have reflected the thermograde of arrangements of accelerometers, are conducive to set up the temperature model of degree of precision, thereby have improved the precision of temperature compensation; (2) output terminal of one-level lever amplifying mechanism is adjusted assembly by rigidity and is connected with measuring acceleration resonator, and rigidity is adjusted the side direction sensitivity that assembly has suppressed accelerometer, and rigidity is adjusted the mass property that assembly has simultaneously, has improved accelerometer response; (3) input end of one-level lever amplifying mechanism adopts thin beam structure, has reduced the amplification of the lever force transmission error that mismachining tolerance causes; The y directional stiffness that rigidity is adjusted assembly is large, has reduced the loss of lever output efficiency; (4) use a plurality of discrete fixed pedestals to be connected with outside framework, effectively reduced interference modal, and improved stability and the impact resistance of arrangements of accelerometers.
Accompanying drawing explanation
Fig. 1 is the structural representation of the silicon vibrating beam accelerometer of the utility model based on the integrated high precision measuring temperature structure of chip.
Fig. 2 is the structural representation that resonator of the present utility model, rigidity are adjusted assembly and one-level lever amplifying mechanism.
Embodiment
Below in conjunction with drawings and the specific embodiments, the utility model is described in further detail.
The silicon vibrating beam accelerometer of the utility model based on the integrated high precision measuring temperature structure of chip, adopt the preparation of SOI technique, for measuring the surveying instrument that is parallel to base level, in conjunction with Fig. 1, be somebody's turn to do the silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip, by upper, in, lower three layers of monocrystalline silicon form, upper strata monocrystalline silicon is the accelerometer Vacuum Package cover plate that is furnished with signal input and output line, lower floor's monocrystalline silicon is the substrate of accelerometer, on the monocrystalline silicon of middle level, be manufactured with accelerometer physical construction, and accelerometer physical construction is connected with lower floor monocrystalline silicon by fixed pedestal, 1, two rigidity adjustment assembly 3a of mass that described accelerometer physical construction comprises outside framework 2 and is positioned at outside framework 2, 3b, two measuring acceleration resonator 4a, 4b, two thermometric resonator 4c, 4d and four one-level lever amplifying mechanism 5a, 5b, 5c, 5d, wherein mass 1 is positioned at integrally-built centre, first, two measuring acceleration resonator 4a, 4b is arranged symmetrically in the upper of mass 1, lower two ends, the upper end of this first measuring acceleration resonator 4a is connected with outside framework 2, and assembly 3a and symmetrical first is adjusted by the first rigidity in the lower end of the first measuring acceleration resonator 4a, two one-level lever amplifying mechanism 5a, the output terminal of 5b is connected, and the lower end of the second measuring acceleration resonator 4b is connected with outside framework 2, and assembly 3b and the symmetrical the 3rd is adjusted by the second rigidity in the upper end of the second measuring acceleration resonator 4b, four one-level lever amplifying mechanism 5c, the output terminal of 5d is connected, these two measuring acceleration resonator 4a, one end of 4b is all connected with fixed pedestal 6a～6n by outside framework 2, has reduced the impact on resonator resonance frequency of unrelieved stress and thermal stress, greatly reduces the temperature coefficient of frequency, the support end of each one-level lever amplifying mechanism is all connected with outside framework 2, the input end of each one-level lever amplifying mechanism is connected with mass 1 by a corresponding straight beam respectively, mass 1 is connected with outside framework 2 by four many foldings beam 7a, 7b, 7c, 7d as brace summer, increased the stability of accelerometer, and improve its impact resistance, and axisymmetric many folding beam 7a, 7b, 7c, 7d not only effectively discharge unrelieved stress, and have reduced intersecting axle sensitivity, first and second thermometric resonator 4c, 4d are arranged symmetrically in the arranged on left and right sides of mass 1, these two thermometric resonator 4c, 4d place straight line are vertical to y with sensitive axes, the two ends of each thermometric resonator are all connected with outside framework 2, two thermometric resonator 4c, 4d provide the real time temperature of accelerometer inside, two points for measuring temperature have reflected the thermograde of arrangements of accelerometers, be conducive to set up the temperature model of degree of precision, thereby improved the precision of temperature compensation, outside framework 2 makes the physical construction part of accelerometer unsettled on the monocrystalline substrate part of lower floor by 12 with centrosymmetric fixed pedestal 6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h, 6j, 6k, 6m, the 6n of mass 1, a plurality of discrete fixed pedestal 6a～6n are connected with outside framework, interference modal be can effectively reduce, and stability and the impact resistance of arrangements of accelerometers improved.
Described two measuring acceleration resonator 4a, 4b, two thermometric resonator 4c, 4d, four one-level lever amplifying mechanism 5a, 5b, 5c, 5d and the beam of folding more than four 7a, 7b, 7c, 7d are all connected with the fixed pedestal of correspondence position by outside framework 2, the impact of the thermal stress that has greatly reduced forming residual stress and environmental change generation on accelerometer performance; The described beam of folding more than four 7a, 7b, 7c, 7d are axially symmetric structures, in x direction, have very large rigidity, and less at y directional stiffness.
In conjunction with Fig. 2, the concrete structure of measuring acceleration resonator of the present utility model, rigidity adjustment assembly and one-level lever amplifying mechanism is as follows:
(1) two measuring acceleration resonator 4a, 4b and two thermometric resonator 4c, the structure of 4d is identical, each measuring acceleration resonator is by two resonance beam 17a, 17b, two fixed drive electrode 14a, 14b, four fixed test electrode 15a, 15b, 15c, 15d and movable broach 16 form, two resonance beam 17a wherein, the center section of 17b is connected, reduced interference modal, adopt bilateral driving, at two resonance beam 17a, the both sides layout activity broach 16 of 17b, in the outside of movable broach 16, arrange fixed drive electrode 14a, 14b, four fixed test electrode 15a of disposed inboard of movable broach 16, 15b, 15c, 15d, movable broach 16 and fixed drive electrode 14a, fixed fingers on 14b drives electric capacity to inserting to form, at fixed drive electrode 14a, on 14b, apply the anti-phase alternating voltage with direct current biasing, movable broach 16 and fixed test electrode 15a, 15b, 15c, fixed fingers on 15d forms Detection capacitance to inserting.
(2) two rigidity is adjusted assembly 3a, 3b structure is identical, each rigidity is adjusted assembly and is formed by semi-girder 8 and rigid member 9, the mass property that rigidity adjustment assembly 3a, 3b have has improved accelerometer response, and its y directional stiffness is very large, can effectively the inertial force of lever output be passed to resonance beam;
The structure of (3) four one-level lever amplifying mechanism 5a, 5b, 5c, 5d is identical, each one-level lever amplifying mechanism is comprised of lever 13, support end 11, input end 10 and output terminal 12, wherein support end 11, input end 10 and output terminal 12 all adopt thin beam structure, can reduce the amplification of the lever force transmission error that mismachining tolerance causes, and can be so that force amplifying function approaches the ideal value of lever amplifying mechanism through appropriate design; The output terminal 12 of described one-level lever amplifying mechanism 5a, 5b, 5c, 5d is all adjusted assembly by rigidity and is connected with measuring acceleration resonator, semi-girder 8 two ends that rigidity is adjusted assembly 3a, 3b are all connected with outside framework 2, in x direction, there is very large rigidity, and less at y directional stiffness, isolated preferably the impact of x direction motion on resonator.
The silicon vibrating beam accelerometer of the utility model based on the integrated high precision measuring temperature structure of chip be for measuring the input acceleration of y direction, when have in the y-direction acceleration a input time, at mass m
1upper generation inertial force F
1=m
1a, this inertial force acts on respectively on four one-level lever amplifying mechanisms, at rigid member m
2upper generation inertial force F
2=m
2a, under the effect of lever and little mass, the acting force acting in every resonance beam of resonator is:
In formula, A is the enlargement factor of one-level lever amplifying mechanism.Wherein going up the power that resonator is subject to is pressure, and resonance frequency reduces, and the power being subject to of lower resonator is pulling force, and resonance frequency increases, and the difference on the frequency of two resonators is:
Δf＝2f
0κ(Am
1+2m
2)a
In formula, κ is the constant with resonant beam structure parameter correlation.Visible, the difference on the frequency of upper and lower resonator is directly proportional to input acceleration a, by detecting the difference on the frequency of upper and lower resonator, measures input acceleration.
Claims (7)
1. the silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip, it is characterized in that: by upper, middle and lower-ranking monocrystalline silicon, formed, upper strata monocrystalline silicon is the accelerometer Vacuum Package cover plate that is furnished with signal input and output line, lower floor's monocrystalline silicon is the substrate of accelerometer, on the monocrystalline silicon of middle level, be manufactured with accelerometer physical construction, and accelerometer physical construction is connected with lower floor monocrystalline silicon by fixed pedestal, the mass (1) that described accelerometer physical construction comprises outside framework (2) and is positioned at outside framework (2), two rigidity are adjusted assembly (3a, 3b), two measuring acceleration resonator (4a, 4b), two thermometric resonator (4c, 4d) He four one-level lever amplifying mechanism (5a, 5b, 5c, 5d), wherein mass (1) is positioned at integrally-built centre, first, two measuring acceleration resonator (4a, 4b) be arranged symmetrically in the upper of mass (1), lower two ends, the upper end of this first measuring acceleration resonator (4a) is connected with outside framework (2), and assembly (3a) and symmetrical first is adjusted by the first rigidity in the lower end of the first measuring acceleration resonator (4a), two one-level lever amplifying mechanism (5a, output terminal 5b) is connected, and the lower end of the second measuring acceleration resonator (4b) is connected with outside framework (2), and assembly (3b) and the symmetrical the 3rd is adjusted by the second rigidity in the upper end of the second measuring acceleration resonator (4b), four one-level lever amplifying mechanism (5c, output terminal 5d) is connected, the support end of each one-level lever amplifying mechanism is all connected with outside framework (2), the input end of each one-level lever amplifying mechanism is connected with mass (1) by a corresponding straight beam respectively, and mass (1) is connected with outside framework (2) by folding beam (7a, 7b, 7c, 7d) more than four, first and second thermometric resonator (4c, 4d) is arranged symmetrically in the arranged on left and right sides of mass (1), and this two thermometric resonators (4c, 4d) place straight line is vertical to y with sensitive axes, and the two ends of each thermometric resonator are all connected with outside framework (2), outside framework (2) makes the physical construction part of accelerometer unsettled on the monocrystalline substrate part of lower floor by 12 with the centrosymmetric fixed pedestal (6a, 6b, 6c, 6d, 6e, 6f, 6g, 6h, 6j, 6k, 6m, 6n) of mass (1).
2. the silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip according to claim 1, it is characterized in that: it is identical that described two rigidity are adjusted assembly (3a, 3b) structure, each rigidity is adjusted assembly and is formed by semi-girder (8) and rigid member (9).
3. the silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip according to claim 1, is characterized in that: described two measuring acceleration resonators (4a, 4b), two thermometric resonators (4c, 4d), four one-level lever amplifying mechanisms (5a, 5b, 5c, 5d) and folding beam (7a, 7b, 7c, 7d) more than four are all connected with the fixed pedestal of correspondence position by outside framework (2).
4. the silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip according to claim 1, it is characterized in that: the structure of described four one-level lever amplifying mechanisms (5a, 5b, 5c, 5d) is identical, each one-level lever amplifying mechanism is comprised of lever (13), support end (11), input end (10) and output terminal (12), and wherein support end (11), input end (10) and output terminal (12) all adopt thin beam structure.
5. the silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip according to claim 1, is characterized in that: described two measuring acceleration resonator (4a, structure 4b) is identical, each measuring acceleration resonator (4a, 4b) by two resonance beam (17a, 17b), two fixed drive electrode (14a, 14b), four fixed test electrode (15a, 15b, 15c, 15d) and movable broach (16) form, two resonance beam (17a wherein, center section 17b) is connected, and adopts bilateral driving, at two resonance beam (17a, both sides layout activity broach (16) 17b), arranges fixed drive electrode (14a in the outside of movable broach (16), 14b), four fixed test electrode (15a of disposed inboard of movable broach (16), 15b, 15c, 15d), movable broach (16) and fixed drive electrode (14a, fixed fingers 14b) drives electric capacity to inserting to form, movable broach (16) and fixed test electrode (15a, 15b, 15c, fixed fingers 15d) forms Detection capacitance to inserting.
6. the silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip according to claim 1, is characterized in that: described folding beam (7a, 7b, 7c, 7d) more than four is axially symmetric structure.
7. the silicon vibrating beam accelerometer based on the integrated high precision measuring temperature structure of chip according to claim 4, it is characterized in that: the output terminal (12) of described one-level lever amplifying mechanism (5a, 5b, 5c, 5d) is all adjusted assembly by rigidity and is connected with measuring acceleration resonator, semi-girder (8) two ends that rigidity is adjusted assembly (3a, 3b) are all connected with outside framework (2).
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103439529A (en) * | 2013-09-04 | 2013-12-11 | 南京理工大学 | Silicon-vibrating-beam accelerometer based on chip-type integrated high-precision temperature measurement structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103439529A (en) * | 2013-09-04 | 2013-12-11 | 南京理工大学 | Silicon-vibrating-beam accelerometer based on chip-type integrated high-precision temperature measurement structure |
| CN103439529B (en) * | 2013-09-04 | 2016-01-20 | 南京理工大学 | Based on the silicon vibrating beam accelerometer of the integrated high precision measuring temperature structure of chip |
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