CN203300652U - Porous substrate for terahertz Schottky diode - Google Patents
Porous substrate for terahertz Schottky diode Download PDFInfo
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- CN203300652U CN203300652U CN2013203052456U CN201320305245U CN203300652U CN 203300652 U CN203300652 U CN 203300652U CN 2013203052456 U CN2013203052456 U CN 2013203052456U CN 201320305245 U CN201320305245 U CN 201320305245U CN 203300652 U CN203300652 U CN 203300652U
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- schottky diode
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- porous
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Abstract
The utility model discloses a porous substrate for a terahertz Schottky diode and belongs to the field of semiconductor devices. The porous substrate comprises a semi-insulating substrate, the back of the semi-insulating substrate is provided with more than two air holes, and the depth of the air holes is smaller than the thickness of the semi-insulating substrate and greater than a third of the thickness of the semi-insulating substrate. As a porous structure is made on the back of the semi-insulating substrate, the parasitic capacitance of the Schottky diode can be greatly reduced, the cut-off frequency of the Schottky diode can be improved, the heat dissipation capability of the Schottky diode can be increased, and the conversion efficiency of the Schottky diode in frequency doubling can be improved.
Description
Technical field
The utility model belongs to field of semiconductor devices.
Background technology
THz wave refers to the electromagnetic wave of frequency in the 0.1-10THz scope, wherein 1THz=1000GHz.THz wave is occupied very special position in electromagnetic spectrum, Terahertz Technology is the very important intersection Disciplinary Frontiers that International Technology circle is generally acknowledged.
At terahertz wave band, Schottky diode can normal temperature work, therefore has been applied to the generation that the mixing of terahertz wave band detects and is used for THz source.
Owing to will making Schottky diode be operated in the Terahertz frequency range, require Schottky diode to have high cut-off frequency, cut-off frequency is higher, and the operating frequency of Schottky diode is just higher.The operating frequency of general Schottky diode is up to 1/10th of cut-off frequency.Cut-off frequency
, wherein
R s For the series resistance of Schottky diode, be generally several ohm to tens ohm,
C T =
C j0 +
C p The total capacitance of Schottky diode during for zero offset, be generally several flying methods to tens flying methods,
C j0 For the junction capacitance of Schottky diode,
C p Total parasitic capacitance for Schottky diode.Increase
f c , the total capacitance of Schottky diode in the time of need to reducing the series resistance of Schottky diode and zero offset.
In the situation that Schottky diode annode area and material doped concentration are certain, the series resistance of Schottky diode and the junction capacitance of Schottky diode are a fixed value, increase the cut-off frequency of Schottky diode, just need to reduce the parasitic capacitance of Schottky diode.The thickness of the parasitic capacitance of Schottky diode and Schottky diode substrate has much relations, and research shows, the Schottky diode substrate thickness is thicker, and parasitic capacitance is larger.Therefore can carry out by the substrate thickness of attenuate Schottky diode less parasitic capacitance.
The utility model content
The purpose of this utility model is to provide a kind of porous-substrates for the Terahertz Schottky diode, when this substrate is applied to the Terahertz Schottky diode, can reduce its parasitic capacitance, improve its cut-off frequency, strengthen its heat-sinking capability, improve the shg efficiency of Schottky diode.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of porous-substrates for the Terahertz Schottky diode, comprise SI-substrate, be provided with plural airport at the back side of described SI-substrate, the degree of depth of described airport is less than the thickness of SI-substrate.
The degree of depth of described airport is greater than 1/3rd of SI-substrate thickness.
The thickness of described SI-substrate is 10 microns to 100 microns.
The area of section of described airport accounts for the 40%-70% of SI-substrate area of section.
Described airport be shaped as rectangle, circle, ellipse or other polygons.
The technological progress of adopting technique scheme to obtain is: the back side that the utility model adopts has the substrate of a plurality of open-celled structures, can further significantly reduce the parasitic capacitance of Schottky diode, improve the cut-off frequency of Schottky diode, simultaneously also can increase the heat-sinking capability of Schottky diode, the conversion efficiency while improving Schottky diode for frequency multiplication.
Description of drawings
Fig. 1 is the front view of the utility model embodiment 1;
Fig. 2 be Fig. 1 along A-A to cutaway view;
Fig. 3 is the front view of embodiment 2;
Fig. 4 is the front view of embodiment 3;
Wherein, 1, SI-substrate, 2, airport.
Embodiment
Embodiment 1
By as can be known illustrated in figures 1 and 2, be used for the porous-substrates of Terahertz Schottky diode, comprise SI-substrate 1, the thickness of described SI-substrate 1 is 10 microns; Be provided with the circular airport 2 of 15 on described SI-substrate 1, every 5 is a row, is divided into three rows regularly arranged; The degree of depth of described airport 2 is 3/4ths of SI-substrate 1.The equal diameters deep equality of each airport 2, and the area of section of all airports 2 accounts for 40% of SI-substrate 1 area of section.Described SI-substrate 1 is GaAs.
The specific implementation technique of this embodiment is: positive photoresist is coated at the back side at SI-substrate 1,, by photoetching, opens the position of airport 2 at needs positive photoresist is exposed, and removes the positive photoresist of airport 2 positions by development; Remove the SI-substrate 1 at airport 2 places by reactive ion etching,, by controlling etch period, make the degree of depth of institute's etching airport 2 reach predetermined value.After etching is completed, remove the positive photoresist on SI-substrate 1.
The diameter of airport 2 can design according to the number of the size of SI-substrate 1 and the airport 2 that needs.
Embodiment 2
By as can be known shown in Figure 3, as different from Example 1, the thickness of described SI-substrate 1 is 50 microns to embodiment 2; Be provided with the rectangle airport 2 of 16 on described SI-substrate 1, three arrange irregular arrangement totally.The area of section of all airports 2 accounts for 50% of SI-substrate 1 area of section.Described substrate 1 is GaN.
In the present embodiment, the area of section of each airport 2 is unequal, and the degree of depth of airport 2 is 1/2nd of SI-substrate 1.
Embodiment 3
By as can be known shown in Figure 4, as different from Example 1, the thickness of described SI-substrate 1 is 100 microns to embodiment 3; Airport 2 has three kinds of shapes: hexagon, rectangle, ellipse, and irregular alignment.In the present embodiment, each shape is arranged a row, arranges three rows.Can also comprise various shape in a row.The area of section of all airports 2 accounts for 70% of SI-substrate 1 area of section.
The degree of depth of the present embodiment hollow pore 2 is 3/5ths of SI-substrate 1.
The degree of depth of each airport 2 can be different, and area is not identical yet.
The 40%-70% of the gross area that in the utility model, the area of section of all airports 2 occupies whole substrate 1 is for best, other ratios also can, also can select greater or lesser ratio according to actual needs.
The setting of airport 2 is very random, and shape, size, arrangement etc. are selected according to the actual requirements voluntarily.
The back side that the utility model adopts has the substrate of a plurality of open-celled structures, can further significantly reduce the parasitic capacitance of Schottky diode, improve the cut-off frequency of Schottky diode, simultaneously also can increase the heat-sinking capability of Schottky diode, the conversion efficiency while improving Schottky diode for frequency multiplication.
Claims (5)
1. porous-substrates that is used for the Terahertz Schottky diode, it is characterized in that comprising SI-substrate (1), be provided with plural airport (2) at the back side of described SI-substrate (1), the degree of depth of described airport (2) is less than the thickness of SI-substrate (1).
2. the porous-substrates for the Terahertz Schottky diode according to claim 1, is characterized in that the degree of depth of described airport (2) is greater than 1/3rd of SI-substrate (1) thickness.
3. the porous-substrates for the Terahertz Schottky diode according to claim 1 and 2, the thickness that it is characterized in that described SI-substrate (1) is 10 microns to 100 microns.
4. the porous-substrates for the Terahertz Schottky diode according to claim 1 and 2, is characterized in that the area of section of described airport (2) accounts for the 40%-70% of SI-substrate (1) area of section.
5. the porous-substrates for the Terahertz Schottky diode according to claim 1 and 2, what it is characterized in that described airport (2) is shaped as rectangle, circle, ellipse.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203052456U CN203300652U (en) | 2013-05-30 | 2013-05-30 | Porous substrate for terahertz Schottky diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2013203052456U CN203300652U (en) | 2013-05-30 | 2013-05-30 | Porous substrate for terahertz Schottky diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203300652U true CN203300652U (en) | 2013-11-20 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013203052456U Expired - Lifetime CN203300652U (en) | 2013-05-30 | 2013-05-30 | Porous substrate for terahertz Schottky diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203300652U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258843A (en) * | 2013-05-30 | 2013-08-21 | 中国电子科技集团公司第十三研究所 | Multi-hole substrate for terahertz Schottky diode |
| CN112992675A (en) * | 2021-02-05 | 2021-06-18 | 中国电子科技集团公司第十三研究所 | Preparation method of porous diamond substrate for terahertz Schottky diode |
-
2013
- 2013-05-30 CN CN2013203052456U patent/CN203300652U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103258843A (en) * | 2013-05-30 | 2013-08-21 | 中国电子科技集团公司第十三研究所 | Multi-hole substrate for terahertz Schottky diode |
| CN103258843B (en) * | 2013-05-30 | 2016-06-15 | 中国电子科技集团公司第十三研究所 | For the porous substrate of Terahertz schottky diode |
| CN112992675A (en) * | 2021-02-05 | 2021-06-18 | 中国电子科技集团公司第十三研究所 | Preparation method of porous diamond substrate for terahertz Schottky diode |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20131120 |