CN203150604U - Flip chip light-emitting element - Google Patents
Flip chip light-emitting element Download PDFInfo
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- CN203150604U CN203150604U CN 201320040107 CN201320040107U CN203150604U CN 203150604 U CN203150604 U CN 203150604U CN 201320040107 CN201320040107 CN 201320040107 CN 201320040107 U CN201320040107 U CN 201320040107U CN 203150604 U CN203150604 U CN 203150604U
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- bearing substrate
- light
- crystal
- emitting element
- emitting diode
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Abstract
The utility model provides a flip chip light-emitting element comprising a bearing substrate, a light emitting diode chip and a wavelength transition material layer. The light emitting diode chip is reversely coated on the bearing substrate and is electrically connected with the bearing substrate; a surface area of the bearing substrate is between 1 and 1.2 times of an orthographic projection area on the bearing substrate by the light emitting diode chip; and the wavelength transition material layer is configured on the bearing substrate and wraps the light emitting diode chip.
Description
Technical field
The utility model relates to a kind of light-emitting component, and particularly relevant for a kind of crystal-coated light-emitting element.
Background technology
That light-emitting diode has is long such as the life-span, volume is little, high shock resistance, low-heat produces and advantage such as low power consumption, therefore has been widely used in indicating device or light source in family expenses and the various device.In recent years, light-emitting diode is towards the high power development, so its application has extended to road lighting, large-scale billboards, traffic lights and association area.In future, light-emitting diode even may become the main lighting source that has power saving and environment-friendly function concurrently.
Yet light-emitting diode chip for backlight unit can produce heat energy when running, can cause the light-emitting diode chip for backlight unit luminous efficiency to reduce or even damage if these heat energy are accumulated in time not remove in the light-emitting diode chip for backlight unit.Yet in order to reach preferable radiating effect, light-emitting diode regular meeting needs a bigger space planning, and thus, the thickness of light-emitting diode, volume and weight all can't reduce.Thereby, how to take into account volume size and the radiating effect of light-emitting diode simultaneously, be the target that present industry is made great efforts.
The utility model content
The utility model provides a kind of crystal-coated light-emitting element, has smaller volume.
The utility model proposes a kind of crystal-coated light-emitting element, it comprises a bearing substrate, a light-emitting diode chip for backlight unit and a material for transformation of wave length layer.Light-emitting diode chip for backlight unit overlays on the bearing substrate and with bearing substrate and electrically connects; One surface area of bearing substrate is between light-emitting diode chip for backlight unit 1 times to 1.2 times in the frontal projected area on the bearing substrate; The material for transformation of wave length layer is configured on the bearing substrate and coats light-emitting diode chip for backlight unit.
In an embodiment of the present utility model, the sidewall of above-mentioned material for transformation of wave length layer trims the sidewall in bearing substrate.
In an embodiment of the present utility model, the thickness of above-mentioned bearing substrate is between 10 microns to 100 microns.
In an embodiment of the present utility model, above-mentioned light-emitting diode chip for backlight unit comprises a chip substrate, semi-conductor layer and a plurality of electrode, and semiconductor layer is between chip substrate and electrode.
In an embodiment of the present utility model, the material of above-mentioned chip substrate is identical with the material of bearing substrate.
In an embodiment of the present utility model, the thickness of above-mentioned bearing substrate is between between 0.3 times to 0.9 times of the thickness of chip substrate.
In an embodiment of the present utility model, above-mentioned bearing substrate has a patterned line layer, and light-emitting diode chip for backlight unit electrically connects by patterned line layer and bearing substrate.
In an embodiment of the present utility model, above-mentioned bearing substrate has a upper surface, and patterned line layer is configured on the upper surface.
In an embodiment of the present utility model, above-mentioned bearing substrate has a upper surface, is embedded in bearing substrate in the patterned line layer.
Among the embodiment of the present utility model, a surface of above-mentioned patterned line layer trims the upper surface in bearing substrate.
In an embodiment of the present utility model, above-mentioned light-emitting diode chip for backlight unit is a blue LED chip.
In an embodiment of the present utility model, above-mentioned material for transformation of wave length layer is a yellow fluorescent material layer.
Based on above-mentioned, owing to only dispose single light-emitting diode chip for backlight unit on the bearing substrate of the present utility model, and the surface area of the bearing substrate of crystal-coated light-emitting element is between light-emitting diode chip for backlight unit 1 times to 1.2 times in the frontal projected area on the bearing substrate, and the material for transformation of wave length layer is configured on the bearing substrate and coats light-emitting diode chip for backlight unit.Therefore, crystal-coated light-emitting element of the present utility model is one single crystal-coated light-emitting diodes, can have smaller volume.In addition, the bearing substrate thickness of crystal-coated light-emitting element of the present utility model is thin compared to existing bearing substrate, thereby crystal-coated light-emitting element of the present utility model can have preferable radiating effect.
For above-mentioned feature and advantage of the present utility model can be become apparent, embodiment cited below particularly, and conjunction with figs. is described in detail below.
Description of drawings
Figure 1A is depicted as the generalized section of a kind of crystal-coated light-emitting element of an embodiment of the present utility model;
Figure 1B illustrates the schematic top plan view of the crystal-coated light-emitting element of Figure 1A;
Fig. 2 is depicted as the generalized section of a kind of crystal-coated light-emitting element of another embodiment of the present utility model.
Description of reference numerals:
100a, 100b: crystal-coated light-emitting element;
110a, 110b: bearing substrate;
111,131: sidewall;
112a, 112b: upper surface;
114a, 114b: patterned line layer;
115a: surface;
120: light-emitting diode chip for backlight unit;
122: chip substrate;
123: the first type semiconductor layer;
124: semiconductor layer;
125: luminescent layer;
126: the first electrodes;
127: the second type semiconductor layer;
128: the second electrodes;
130: the material for transformation of wave length layer;
T, t: thickness.
Embodiment
Figure 1A is depicted as the generalized section of a kind of crystal-coated light-emitting element of an embodiment of the present utility model.Figure 1B illustrates the schematic top plan view of the crystal-coated light-emitting element of Figure 1A.Please also refer to Figure 1A and Figure 1B, in the present embodiment, crystal-coated light-emitting element 100a comprises a bearing substrate 110a, a light-emitting diode chip for backlight unit 120 and a material for transformation of wave length layer 130.Light-emitting diode chip for backlight unit 120 overlays on bearing substrate 110a and goes up and electrically connect with bearing substrate 110a.The surface area of bearing substrate 110a is between light-emitting diode chip for backlight unit 120 1 times to 1.2 times in the frontal projected area on the bearing substrate 110a.Material for transformation of wave length layer 130 is configured in bearing substrate 110a and goes up and coat light-emitting diode chip for backlight unit 120.
More particularly, in the present embodiment, the thickness T of bearing substrate 110a is between 10 microns to 100 microns.Bearing substrate 110a has a upper surface 112a and a patterned line layer 114a, and wherein light-emitting diode chip for backlight unit 120 electrically connects by patterned line layer 114a and bearing substrate 110a.Be embedded in bearing substrate 110a in the patterned line layer 114a, and the surperficial 115a of patterned line layer 114a trims the upper surface 112a in bearing substrate 110a.Light-emitting diode chip for backlight unit 120 comprises a chip substrate 122, semi-conductor layer 124 and a plurality of electrode 126,128, and wherein semiconductor layer 124 is between chip substrate 122 and electrode 126,128.Specifically, semiconductor layer 124 is made up of one first type semiconductor layer 123, a luminescent layer 125 and one second type semiconductor layer 127, wherein electrode 126,128 is configured in respectively on first type semiconductor layer 123 and second type semiconductor layer 127, and material for transformation of wave length layer 130 fills up the gap between the electrode 126,128.But in unshowned diagram, material for transformation of wave length layer 130 also can not fill up the gap between the electrode 126,128, is not limited at this.Particularly, the material of the chip substrate 122 of the present embodiment material with bearing substrate 110a in fact is identical, and preferably, the material of bearing substrate 110a for example is sapphire.Specifically, the thickness T of bearing substrate 110a is less than the thickness t of chip substrate 122, and more preferably, the thickness T of bearing substrate 110a is between between 0.3 times to 0.9 times of the thickness t of chip substrate 122.Thus, can make crystal-coated light-emitting element 100a can have littler volume.In addition, shown in Figure 1A, the sidewall 131 of the material for transformation of wave length layer 130 of present embodiment trims the sidewall 111 in bearing substrate 110a.Herein, light-emitting diode chip for backlight unit 120 is a blue LED chip for example, and material for transformation of wave length layer 130 is a yellow fluorescent material layer.In other words, the crystal-coated light-emitting element 100a of present embodiment is a crystal covering type white light emitting diode.
Owing to only dispose single light-emitting diode chip for backlight unit 120 on the bearing substrate 110a of present embodiment, and the surface area of the bearing substrate 110a of crystal-coated light-emitting element 100a is between light-emitting diode chip for backlight unit 120 1 times to 1.2 times in the frontal projected area on the bearing substrate 110a, and the sidewall 131 of material for transformation of wave length layer 130 trims the sidewall 111 in bearing substrate 110a.Therefore, the crystal-coated light-emitting element 100a of present embodiment is one single crystal-coated light-emitting diodes, and can have smaller volume.In addition, because the thickness of the bearing substrate 110a of present embodiment is more detailed only between 10 microns to 100 microns, be bearing substrate more than 150 microns compared to existing usual thickness, present embodiment can have thinner thickness and preferable radiating effect.
What deserves to be mentioned is that the utility model is the structure kenel of limiting pattern line layer 114a not, though patterned line layer 114a mentioned herein is embodied as an embedded line layer.But in other embodiment; please refer to Fig. 2; the bearing substrate 110b of the crystal-coated light-emitting element 100b of present embodiment also can have the patterned line layer 114b that is configured on the upper surface 112b; be general line layer; this still belongs to the adoptable technical scheme of the utility model, does not break away from the scope of the utility model institute desire protection.
In sum, owing to only dispose single light-emitting diode chip for backlight unit on the bearing substrate of the present utility model, and the surface area of the bearing substrate of crystal-coated light-emitting element is between light-emitting diode chip for backlight unit 1 times to 1.2 times in the frontal projected area on the bearing substrate, and the material for transformation of wave length layer is configured on the bearing substrate and coats light-emitting diode chip for backlight unit.Therefore, crystal-coated light-emitting element of the present utility model is one single crystal-coated light-emitting diodes, and can have smaller volume.In addition, the bearing substrate thickness of crystal-coated light-emitting element of the present utility model is thin compared to existing bearing substrate, thereby crystal-coated light-emitting element of the present utility model can have preferable radiating effect.
It should be noted that at last: above each embodiment is not intended to limit only in order to the technical solution of the utility model to be described; Although have been described in detail with reference to the utility model of aforementioned each embodiment, those of ordinary skill in the art is to be understood that: it still can be made amendment to the technical scheme that aforementioned each embodiment puts down in writing, and perhaps some or all of technical characterictic wherein is equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution break away from the scope of each embodiment technical scheme of the utility model.
Claims (12)
1. a crystal-coated light-emitting element is characterized in that, comprising:
One bearing substrate;
One light-emitting diode chip for backlight unit overlays on this bearing substrate and electrically connects with this bearing substrate, and wherein a surface area of this bearing substrate is between this light-emitting diode chip for backlight unit 1 times to 1.2 times in the frontal projected area on this bearing substrate; And
One material for transformation of wave length layer is configured on this bearing substrate and coats this light-emitting diode chip for backlight unit.
2. crystal-coated light-emitting element according to claim 1 is characterized in that, the sidewall of this material for transformation of wave length layer trims the sidewall in this bearing substrate.
3. crystal-coated light-emitting element according to claim 1 is characterized in that, the thickness of this bearing substrate is between 10 microns to 100 microns.
4. crystal-coated light-emitting element according to claim 1 is characterized in that, this light-emitting diode chip for backlight unit comprises a chip substrate, semi-conductor layer and a plurality of electrode, and this semiconductor layer is between this chip substrate and those electrodes.
5. crystal-coated light-emitting element according to claim 4 is characterized in that, the material of this chip substrate is identical with the material of this bearing substrate.
6. crystal-coated light-emitting element according to claim 4 is characterized in that, the thickness of this bearing substrate is between between 0.3 times to 0.9 times of the thickness of this chip substrate.
7. crystal-coated light-emitting element according to claim 1 is characterized in that, this bearing substrate has a patterned line layer, and this light-emitting diode chip for backlight unit electrically connects by this patterned line layer and this bearing substrate.
8. crystal-coated light-emitting element according to claim 7 is characterized in that, this bearing substrate has a upper surface, and this patterned line layer is configured on this upper surface.
9. crystal-coated light-emitting element according to claim 7 is characterized in that, this bearing substrate has a upper surface, is embedded in this bearing substrate in this patterned line layer.
10. crystal-coated light-emitting element according to claim 9 is characterized in that, a surface of this patterned line layer trims this upper surface in this bearing substrate.
11. crystal-coated light-emitting element according to claim 1 is characterized in that, this light-emitting diode chip for backlight unit is a blue LED chip.
12. crystal-coated light-emitting element according to claim 1 is characterized in that, this material for transformation of wave length layer is a yellow fluorescent material layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320040107 CN203150604U (en) | 2013-01-24 | 2013-01-24 | Flip chip light-emitting element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320040107 CN203150604U (en) | 2013-01-24 | 2013-01-24 | Flip chip light-emitting element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203150604U true CN203150604U (en) | 2013-08-21 |
Family
ID=48978108
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320040107 Expired - Lifetime CN203150604U (en) | 2013-01-24 | 2013-01-24 | Flip chip light-emitting element |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203150604U (en) |
-
2013
- 2013-01-24 CN CN 201320040107 patent/CN203150604U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130821 |
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| CX01 | Expiry of patent term |