CN203128192U - Preparation device of chemical reagent for improving surface sample preparation of silicon wafer - Google Patents
Preparation device of chemical reagent for improving surface sample preparation of silicon wafer Download PDFInfo
- Publication number
- CN203128192U CN203128192U CN 201220706322 CN201220706322U CN203128192U CN 203128192 U CN203128192 U CN 203128192U CN 201220706322 CN201220706322 CN 201220706322 CN 201220706322 U CN201220706322 U CN 201220706322U CN 203128192 U CN203128192 U CN 203128192U
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- hydrofluoric acid
- chemical reagent
- ozone
- valve
- sample preparation
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- Sampling And Sample Adjustment (AREA)
Abstract
The utility model provides a preparation device of a chemical reagent for improving the surface sample preparation of a silicon wafer. The preparation device comprises an ozone generator and a hydrofluoric acid container, wherein the gas inlet end of the ozone generator is connected with an oxygen bottle through a first valve, and the gas outlet end of the ozone generator is connected with the hydrofluoric acid container through a flow controller and a second valve; and the hydrofluoric acid container is provided with a gas exhaust pipeline controlled by a third valve. The preparation device is simple in structure; and the concentration of ozone in a prepared mixed chemical reagent containing ozone and hydrofluoric acid is close to saturation and can reach 25-30ppm. As oxygen ions and radicals generated after the ozone is decomposed in a solvent can oxidize the silicon surface, and the hydrofluoric acid can effectively corrode an oxide film on the surface under the action of the ozone, and therefore the chemical reagent prepared by using the preparation device is especially suitable for surface sample preparation of the silicon wafer of which a natural oxide film is only formed on the surface.
Description
Technical field
The utility model relates to a kind of device for making of the chemical reagent for improvement of the silicon chip surface sample preparation, and the chemical reagent of producing by this device is suitable for the surperficial sample preparation that the surface has only the silicon chip of natural oxide film.
Background technology
Silicon chip is most popular substrate material in the unicircuit, to surpass 50% finished product rate of loss be that pollution by silicon face causes and have in semi-conductive complete processing, be accompanied by the raising day by day of circuit level, the unit figure size is microminiaturized day by day, and pollutent is also outstanding further to the influence of device.Metal contamination can destroy integrity, increase leakage current density, the minimizing minority carrier life time of thin oxide layer, influences the stability of MOS device.When metal contamination is serious, also can form vaporific defective (Haze).Therefore, need carry out metal contamination test to silicon chip, purpose be confirm on the silicon chip metal contamination whether in allowed limits, enter in subsequently the work program to avoid unacceptable product.
Before using inductivity coupled plasma mass spectrometry analysis (ICP-MS), x-ray fluorescence analysis (TXRF) etc. that the content of metal contamination is analyzed, at first need the metal contamination impurity of silicon chip surface is collected.Present collection method is mainly carried out in two steps: at first, the oxide film on corrosion of silicon surface makes silicon chip surface be hydrophobicity, then, adopts special-purpose chemical reagent to collect impurities on surface of silicon chip by the drop scanning method, produces sample to be analyzed.
When the collection of the scanner uni sample to be analyzed that carries out silicon chip surface, need special-purpose chemical reagent.Present special-purpose chemical reagent is: hydrogen peroxide (H
2O
2) with the mixed solution of hydrofluoric acid (HF), be called for short VPD liquid.Utilize the oxidisability of hydrogen peroxide, hydrofluoric acid and silicon chip surface oxide film (SiO
2) reaction, also make silicon chip surface be hydrophobicity simultaneously, be convenient to the collection of sample.
Because the oxide film of some silicon chip surface as thin as a wafer, even cause through after the HF corrosion process, still can't well collect the sample of metallic contaminants from surface.For this situation, adopt hydrogen peroxide (H
2O
2) with the mixed solution of hydrofluoric acid (HF), utilize the oxidisability of hydrogen peroxide that silicon chip surface is carried out oxidation, increased the operability that its sample is produced.But in actually operating, some silicon chip surface has only natural oxide film as thin as a wafer, and the epitaxial wafer of especially just having finished does not almost have oxide film, and this just makes VPD liquid can't finish the process of sample preparation.We need the chemical reagent of strong oxidizing property more to finish the collection of sample for this reason.
The utility model content
The purpose of this utility model is to provide a kind of device for making of the chemical reagent for improvement of the silicon chip surface sample preparation, adopts this device to produce and has the more ozone hydrofluoric acid mixed chemical reagent of strong oxidizing property.
For achieving the above object, the utility model is by the following technical solutions:
A kind of device for making of the chemical reagent for improvement of the silicon chip surface sample preparation, comprise ozonizer and hydrofluoric acid container, the inlet mouth end of this ozonizer is connected with oxygen cylinder by first valve, its air outlet end is connected with the hydrofluoric acid container by flow director and second valve, and described hydrofluoric acid container has the exhaust line by the control of the 3rd valve.
Be provided with quartz burner in the described ozonizer.
The ultraviolet wavelength that described quartz burner sends is 185nm.
Advantage of the present utility model is:
Chemical reagent device for making of the present utility model is simple in structure, and the concentration of producing that contains ozone in ozone and the hydrofluoric acid mixed chemical reagent is tending towards saturated, can reach 25～30ppm.Because ozone decomposes oxonium ion and the rapid silicon oxide surface of free radical energy that the back produces in solution, and hydrofluoric acid can effectively corrode surface film oxide under the effect of ozone, and therefore the chemical reagent of producing by this device is particularly useful for the surperficial sample preparation that the surface has only the silicon chip of natural oxide film.
Description of drawings
Fig. 1 is structural representation of the present utility model.
Fig. 2 is the sectional view of ozonizer in the utility model.
Embodiment
As shown in Figure 1, device for making of the present utility model, comprise ozonizer 1 and hydrofluoric acid container 2, the inlet mouth end of this ozonizer 1 is connected with oxygen cylinder by the first valve V1, its air outlet end is connected with hydrofluoric acid container 2 by flow director 3 and the second valve V2, described hydrofluoric acid container 2 has the exhaust line 4 by the 3rd valve V3 control, and this exhaust line 4 connects exhaust gas processing device.
Ozonizer described in the utility model can adopt the method for common uviolizing to produce ozone, as shown in Figure 2, is provided with quartz burner 5 in the described ozonizer 1.The wavelength that this quartz burner sends is λ=185nm.Open valve V1, make oxygen enter ozonizer, oxygen molecule decomposes and polymerization generation ozone molecule through uviolizing.
The ozone that produces enters through flow director and the second valve V2 and fills in the hydrofluoric acid container 2 of hydrofluoric acid solution that concentration is 0.5wt%, opens the 3rd valve V3 on the exhaust line 4 simultaneously, discharges tail gas to exhaust gas processing device.
According to the physical properties of ozone, it at room temperature feeds ozone in 0.5% the hydrofluoric acid solution behind the 20min in said apparatus, and its concentration in solution just is tending towards saturated, can reach 25～30ppm.The chemical reagent that obtains just can be directly used in the sample preparation of silicon chip surface.
The employed material of the utility model all adopts the high-purity material that meets the unicircuit requirement, acidproof corruption, and can not bring particle, metal contamination.As PTFE or polymer polyethylene material.Oxygen all adopts high-purity gas.
The chemical reagent that device for making of the present utility model obtains utilizes the ozone oxidisability stronger than hydrogen peroxide, can better produce sample with respect to original VPD liquid.In addition, ozone does not produce pollution after decomposing in water, the protection environment, and use ozone more can guarantee not bring into new pollutent.
Claims (3)
1. device for making for improvement of the chemical reagent of silicon chip surface sample preparation, it is characterized in that, comprise ozonizer and hydrofluoric acid container, the inlet mouth end of this ozonizer is connected with oxygen cylinder by first valve, its air outlet end is connected with the hydrofluoric acid container by flow director and second valve, and described hydrofluoric acid container has the exhaust line by the control of the 3rd valve.
2. the device for making of the chemical reagent for improvement of the silicon chip surface sample preparation according to claim 1 is characterized in that, is provided with quartz burner in the described ozonizer.
3. the device for making of the chemical reagent for improvement of the silicon chip surface sample preparation according to claim 2 is characterized in that the ultraviolet wavelength that described quartz burner sends is 185nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220706322 CN203128192U (en) | 2012-12-19 | 2012-12-19 | Preparation device of chemical reagent for improving surface sample preparation of silicon wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220706322 CN203128192U (en) | 2012-12-19 | 2012-12-19 | Preparation device of chemical reagent for improving surface sample preparation of silicon wafer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203128192U true CN203128192U (en) | 2013-08-14 |
Family
ID=48936190
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220706322 Expired - Lifetime CN203128192U (en) | 2012-12-19 | 2012-12-19 | Preparation device of chemical reagent for improving surface sample preparation of silicon wafer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203128192U (en) |
-
2012
- 2012-12-19 CN CN 201220706322 patent/CN203128192U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM ADVANCED MATERIALS CO.,LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150611 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150611 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM ADVANCED MATERIALS CO.,LTD. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130814 |