CN109935528A - A kind of silicon chip surface processing method - Google Patents
A kind of silicon chip surface processing method Download PDFInfo
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- CN109935528A CN109935528A CN201711360731.7A CN201711360731A CN109935528A CN 109935528 A CN109935528 A CN 109935528A CN 201711360731 A CN201711360731 A CN 201711360731A CN 109935528 A CN109935528 A CN 109935528A
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Abstract
The invention discloses a kind of silicon chip surface processing methods, method includes the following steps: (1) chooses clean polished silicon slice or epitaxial silicon chip；(2) high-temperature oxydation is carried out to silicon chip surface, grows oxidation film layer；(3) surface treatment sampling is carried out using sampling liquid, by carrying out analysis test to sampling liquid, obtains silicon chip surface tenor, assess silicon chip surface metal contamination situation.Using silicon chip surface processing method of the invention, can quickly, efficiently, the carry out silicon chip surface processing of batch, timely the content of test analysis silicon chip surface metal, achievees the purpose that monitor silicon chip surface metal level.
Description
Technical field
The present invention relates to a kind of silicon chip surface processing methods, belong to silicon chip process technology field.
Background technique
In recent years, semiconductor is higher and higher with silicon wafer utilization rate, and dosage is also increasing, and the size of silicon wafer also gradually increases
Greatly, to 12 inches, even 18 inches, but silicon wafer integrated level used in semiconductor integrated circuit increases, line width reduces,
Just the requirement of Si wafer quality is increasingly stringenter, the mass parameter of silicon wafer mainly includes surface particles or defect, surface metal
Content, in-vivo metal (FE) content, the parameters such as minority carrier life time, diffusion length, it is stringent right during producing and processing silicon wafer
The monitoring and analysis of these performance parameters.
Semiconductor foundry silicon wafer is met the requirements by processing, cleaning detection, surface metal, is packed into film magazine, plant area's transmitting
Or extension producer and device producer are transported in factory.The surface metal of silicon chip surface will affect electrical property in integrated circuit
Can, surface metal includes light metal (Na, Mg, Al, K, Ca etc.), and heavy metal (Cr, Mn, Fe, Ni, Cu, Zn etc.), silicon wafer is subsequent
Perhaps surface metal levels excessively will lead to device lifetime and reduce or component failure processing extension in device process, and then lead
Product quality loss is caused, finished product rate is caused to reduce.This just needs strict control silicon chip surface tenor.
Summary of the invention
The purpose of the present invention is to provide a kind of silicon chip surface processing methods, with quick, efficient, batch carry out silicon wafer table
Surface treatment, the content of timely test analysis silicon chip surface metal achieve the purpose that monitor silicon chip surface metal level.
To achieve the above object, the invention adopts the following technical scheme:
A kind of silicon chip surface processing method, method includes the following steps:
(1) clean polished silicon slice or epitaxial silicon chip are chosen；
(2) high-temperature oxydation is carried out to silicon chip surface, grows oxidation film layer；
(3) surface treatment sampling is carried out using sampling liquid, by carrying out analysis test to sampling liquid, obtains silicon chip surface gold
Belong to content, assesses silicon chip surface metal contamination situation.
Wherein, 10~5000 angstroms of the thickness of the oxidation film layer.
The hydrofluoric acid of hydrogen peroxide and mass percent concentration 38% that the sampling liquid is 35% by mass percent concentration
Solution is formulated, and wherein the volume fraction of hydrogen peroxide is 90~98%.Wherein, impurity in the hydrogen peroxide and hydrofluoric acid solution
Content is less than 10ppt.
The present invention has the advantages that
Using silicon chip surface processing method of the invention, can quickly, efficiently, the carry out silicon chip surface processing of batch, and
When test analysis silicon chip surface metal content, achieve the purpose that monitor silicon chip surface metal level.
Detailed description of the invention
Fig. 1 is the flow diagram of silicon chip surface processing method.
Specific embodiment
Below by drawings and examples, the present invention will be further described, but is not meant to the scope of the present invention
Limitation.
It is as shown in Figure 1 the schematic diagram of silicon chip surface processing method of the present invention.Specific steps are as follows:
1, it needs to prepare clean polished silicon wafer or epitaxial wafer, it is ensured that surface does not have large area particle contamination.To polished silicon wafer or
The surface of epitaxial wafer carries out high-temperature oxydation, grows oxidation film layer, can be controlled according to test needs, thicknesses of layers at 10~5000 angstroms
In the range of.The equipment of high-temperature oxydation needs cleaning, will not bring additional contamination, or has and stain magnitude monitoring.
2, sampling liquid is prepared, H is used2O2(35%) it is prepared with HF (38%) solution, samples H in liquid2O2(35%) body
Fraction can be adjusted, thickness is thicker, H 90~98% according to oxidation film layer thickness change2O2Volume fraction is smaller.
3, sampling liquid is drawn, silicon chip surface center after oxidation is dropped to, is pressed using sampler automatic sampling or manually
It is sampled according to process shown in Fig. 1.
4, sampling process needs for the mobile entire silicon chip surface of covering of drop finally drop to be drawn in test bottle, into
The test of row surface metal.
Embodiment
The present embodiment illustrates by taking 12 inches of polished silicon slices and epitaxial silicon chip as an example.
1, take same batch polished silicon wafer 6, take 3 epitaxial growths, after by remaining 3 12 inches of polished silicon slices and 3 12 English
Very little epitaxial silicon chip carries out metal analysis test；
2,6 12 inch silicon wafer surface particles are tested using surface particles tester KLA Tencor SP1, it is ensured that surface
There is no large area particle contaminant；
3,3 12 inches of polished silicon slices and 3 12 inches of epitaxial wafers are fitted into high temperature oxidation furnace respectively, are passed through high pure oxygen
Gas and argon gas, carry out 1100 DEG C of high-temperature oxydations, and surface grows 1000 angstroms of oxidation film.
4, sampling liquid is prepared, TAMA-AA10-H is used2O2Specification, 35%H2O2(impurity content is less than 10ppt) 90mL,
AMA-AA10-HF specification, 38%HF10mL.Entire process for preparation needs carry out in ten grades of environment, avoid external belt to stain.
5, illustrate according to shown in Fig. 1, draw 200 μ L chemical liquids using liquid-transfering gun, instill among oxidized silicon chip, carry out surface
Processing, mobile trace is unlimited when processing, but needs the entire silicon chip surface of chemical liquids moving contact, preparation surface treatment chemical solution
Liquid after the completion of preparation, recycles solution, is titrated to 1mL, and using the metal magnitude in ICPMS test solution, assessment surface metal contains
Amount, the results are shown in Table 1.
Table 1
By above-mentioned test result, polished silicon wafer surface metal meets 1E10atoms/cm substantially2Level, by high temperature epitaxy
There is Ni metal in part silicon wafer afterwards and contamination situation occurs in Ni, this two kinds of metals pass through traditional SPV (surface photovoltage test)
It can not monitor, but various metals can be tested and be identified using method of the invention.
Claims (4)
1. a kind of silicon chip surface processing method, which comprises the following steps:
(1) clean polished silicon slice or epitaxial silicon chip are chosen；
(2) high-temperature oxydation is carried out to silicon chip surface, grows oxidation film layer；
(3) surface treatment sampling is carried out using sampling liquid, by carrying out analysis test to sampling liquid, obtains silicon chip surface metal and contain
Amount assesses silicon chip surface metal contamination situation.
2. silicon chip surface processing method according to claim 1, which is characterized in that the thickness 10 of the oxidation film layer~
5000 angstroms.
3. silicon chip surface processing method according to claim 1, which is characterized in that the sampling liquid is dense by mass percent
Degree is formulated for 35% hydrogen peroxide and the hydrofluoric acid solution of mass percent concentration 38%, wherein the volume fraction of hydrogen peroxide
It is 90~98%.
4. silicon chip surface processing method according to claim 3, which is characterized in that the mass percent concentration is 35%
Hydrogen peroxide and mass percent concentration 38% hydrofluoric acid solution in impurity content be less than 10ppt.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201711360731.7A CN109935528A (en) | 2017-12-15 | 2017-12-15 | A kind of silicon chip surface processing method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112059736A (en) * | 2020-09-08 | 2020-12-11 | 有研半导体材料有限公司 | Silicon wafer manufacturing process |
| CN112713103A (en) * | 2021-03-29 | 2021-04-27 | 西安奕斯伟硅片技术有限公司 | Method for measuring metal content in silicon wafer |
| CN112798543A (en) * | 2021-01-19 | 2021-05-14 | 杭州中欣晶圆半导体股份有限公司 | Method for measuring copper content on surface of silicon polished wafer |
| CN112816424A (en) * | 2021-01-19 | 2021-05-18 | 杭州中欣晶圆半导体股份有限公司 | Method for measuring iron content on surface of silicon polished wafer |
| CN112924532A (en) * | 2021-01-28 | 2021-06-08 | 上海华力微电子有限公司 | Method for detecting metal ion content |
| CN117191932A (en) * | 2023-11-06 | 2023-12-08 | 山东有研艾斯半导体材料有限公司 | Method and system for testing metal recovery rate of silicon wafer surface |
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| CN102980938A (en) * | 2012-12-03 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for testing metal ions on surface of wafer of solar battery |
| CN104733337A (en) * | 2013-12-23 | 2015-06-24 | 有研新材料股份有限公司 | Testing method for analyzing metal contamination in silicon wafers |
| CN107389663A (en) * | 2017-06-30 | 2017-11-24 | 天津中环领先材料技术有限公司 | A kind of method for detecting metal ion content in silicon chip surface oxide-film |
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| CN102565182A (en) * | 2011-12-16 | 2012-07-11 | 天津中环领先材料技术有限公司 | Method for testing content of metal ions on surface of 8-inch silicon polished wafer for insulated gate bipolar transistor (IGBT) |
| CN102980938A (en) * | 2012-12-03 | 2013-03-20 | 天津中环领先材料技术有限公司 | Method for testing metal ions on surface of wafer of solar battery |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112059736A (en) * | 2020-09-08 | 2020-12-11 | 有研半导体材料有限公司 | Silicon wafer manufacturing process |
| CN112798543A (en) * | 2021-01-19 | 2021-05-14 | 杭州中欣晶圆半导体股份有限公司 | Method for measuring copper content on surface of silicon polished wafer |
| CN112816424A (en) * | 2021-01-19 | 2021-05-18 | 杭州中欣晶圆半导体股份有限公司 | Method for measuring iron content on surface of silicon polished wafer |
| CN112924532A (en) * | 2021-01-28 | 2021-06-08 | 上海华力微电子有限公司 | Method for detecting metal ion content |
| CN112713103A (en) * | 2021-03-29 | 2021-04-27 | 西安奕斯伟硅片技术有限公司 | Method for measuring metal content in silicon wafer |
| CN112713103B (en) * | 2021-03-29 | 2021-06-25 | 西安奕斯伟硅片技术有限公司 | Method for measuring metal content in silicon wafer |
| CN117191932A (en) * | 2023-11-06 | 2023-12-08 | 山东有研艾斯半导体材料有限公司 | Method and system for testing metal recovery rate of silicon wafer surface |
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Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Applicant after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Applicant before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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