CN202434471U - Surface processing and corrosion device for carrying out sample preparation on surface of silicon chip - Google Patents
Surface processing and corrosion device for carrying out sample preparation on surface of silicon chip Download PDFInfo
- Publication number
- CN202434471U CN202434471U CN 201120521680 CN201120521680U CN202434471U CN 202434471 U CN202434471 U CN 202434471U CN 201120521680 CN201120521680 CN 201120521680 CN 201120521680 U CN201120521680 U CN 201120521680U CN 202434471 U CN202434471 U CN 202434471U
- Authority
- CN
- China
- Prior art keywords
- silicon chip
- ozone
- nitrogen
- corrosion
- sample preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Images
Landscapes
- Sampling And Sample Adjustment (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The utility model relates to a surface processing and corrosion device for carrying out sample preparation on the surface of a silicon chip, which comprises a corrosion cavity body (1), a cover (2) and an external HF (Hydrogen Fluoride) container (5), wherein a silicon chip station (4), an ozone or nitrogen filling inlet (1-1), a HF gas inlet (1-2) using nitrogen as a carrier and an exhaust port (1-4) are arranged in the cavity body; the ozone or nitrogen filling inlet (1-1) is connected in series with a valve V2 and a flow regulating valve MFC1; the other end of the MFC1 is connected with a three-way joint; one end of the three-way joint is connected with a nitrogen pipeline; and the other end of the three-way joint is connected with an outlet of an ozone pipeline. The surface processing and corrosion device has the advantages that according to the device, a compact oxide film can be firstly formed on the surface of the silicon chip by ozone, then the surface oxide film is effectively corroded and the surface of the silicon chip is ensured hydrophobic; the surface processing and corrosion device is beneficial for scanning the hydrophobic surface of the silicon chip and collecting metal impurities by droplets in the next step; and the device has compact structure, is easy to operate and has a good effect.
Description
Technical field
The utility model relates to a kind of improvement of corrosion device of silicon chip surface sample preparation, is particularly useful for the silicon chip that the surface has only natural oxide film.
Background technology
Silicon chip is a most popular backing material in the integrated circuit; Have in semi-conductive processing technology that to surpass 50% finished product loss late be that pollution by silicon face causes; Be accompanied by the raising day by day of circuit level; The unit figure size is microminiaturized day by day, and pollutant is also outstanding further to the influence of device.Metal contamination can destroy integrality, increase leakage current density, the minimizing minority carrier life time of thin oxide layer, influences the stability of MOS device.When metal contamination is serious, also can form vaporific defective (Haze) therefore, we need carry out the metal contamination test to silicon chip, and purpose is to confirm that whether in allowed limits metal contamination gets in the procedure subsequently to avoid defective item on the silicon chip.
Before using ICP-MS (inductivity coupled plasma mass spectrometry analysis), TXRF (x-ray fluorescence analysis) etc. that the content of metal contamination is analyzed; We at first need collect the metal contamination impurity of silicon chip surface; Present collection method is mainly carried out in two steps: at first; The oxide-film on corrosion of silicon surface makes silicon chip surface be hydrophobicity; Then, collect impurity, produce sample to be analyzed through the drop scanning method.
The corrosion of silicon chip surface is the committed step of silicon chip surface sample preparation, can influence the collection of next step sample to be analyzed, and its principle is: utilize hydrofluoric acid (HF) and silicon chip surface oxide-film (SiO
2) reaction, and silicon (Si) itself is corroded hardly, reaction equation is: SiO
2+ 4HF=SiF
4↑+2H
2O.In corrosion process, can be dissolved in attached to the surface metal on the natural oxide film among the moisture film of surface generation, silicon chip surface also is hydrophobicity, has been convenient to next step drop scanning and collection.
In practical operation, because the natural oxide film of some silicon chip surface as thin as a wafer, the epitaxial wafer of especially just having accomplished does not almost have oxide-film, even this just causes through after the HF corrosion process, still can't well collect the sample of metallic contaminants from surface.Therefore,, be necessary in carrying out corrosion process, make its surface form dense oxidation film earlier and corrode again, with the collection of convenient follow-up middle metallic contaminants from surface for such silicon chip.
Summary of the invention
The utility model purpose provides a kind of surface treatment and corrosion device of silicon chip surface sample preparation, this device help next step with drop to the scanning of silicon chip hydrophobic surface and the collection of metal impurities.
For achieving the above object, the utility model adopts following technical scheme:
This surface treatment and the corrosion device that is used for the silicon chip surface sample preparation comprises: corrosion cavity (1), housing (2); Be provided with silicon chip platform (4) and logical ozone or nitrogen inlet (1-1) in the cavity, by HF gas access (1-2) and the exhaust outlet (1-4) of nitrogen as carrier; The HF container (5) that also comprises peripheral hardware, inlet (1-1) the serial connection valve V2 of logical ozone or nitrogen, flow control valve MFC
1, MFC
1Another termination threeway, a termination nitrogen pipeline of threeway, the outlet on another termination ozonizer road of threeway.
Comprise ozone generator (6) in the ozone pipeline, ozone generator is oxygen forms ozone through ultraviolet irradiation a ozone generator.
Described by being provided with flow control valve MFC in the HF gas access pipeline of nitrogen as carrier
2And nitrogen pressure control valve V6.
In this corrosion device, corrosion cavity 1 and housing 2, HF container 5, and the part of continuous pipeline system utilizes the existing device of market sale, and (model is: WSPS PAD-Fume producer: GeMeTec).Ozone pipeline described in the utility model is to be connected to MFC in nitrogen pipeline
1Hold a parallelly connected ozone pipeline.
This device at first utilizes ozone (O
3) strong oxidizing property, rapidly silicon chip surface is formed fine and close oxide-film, again surface film oxide is effectively corroded, reach the purpose of being convenient to next step drop scanning and sample collection.
The employed material of the utility model all adopts the high-purity material that meets the integrated circuit requirement, acidproof corruption, and can not bring particle, metal contamination.Like PTFE or macromolecule polyethylene material.Nitrogen and oxygen all adopt high-purity gas.
The utility model has the advantages that: utilize ozone that silicon chip surface is formed fine and close oxide-film earlier earlier; Again surface film oxide is effectively corroded; And make silicon chip surface be hydrophobicity, so just help next step with drop to the scanning of silicon chip hydrophobic surface and the collection of metal impurities.
Description of drawings
Fig. 1: surface treatment that the utility model provides and corrosion device sketch map
Fig. 2: Fig. 1 corrodes the vertical view of cavity silicon chip platform
Fig. 3: the ozone generator sketch map among Fig. 1
Among Fig. 1, Fig. 2, Fig. 3,1 is the corrosion cavity, and 2 is housing, and 3 is the control arm of cover cap; 1-1 is the ozone or the nitrogen inlet of cavity, and 1-2 is that 1-4 is an exhaust outlet by the HF gas access of nitrogen as carrier; 4 is the silicon chip platform, and the silicon chip platform is provided with and carries silicon chip post 4-1 (totally 3), and 5 is the HF container; 6 is ozone generator, and 6-1 is a quartz burner, and V6 is the nitrogen pressure control valve.V1, V2, V3, V4, V5 are valve, MFC
1, MFC
2Be flow control valve, V7 is a pressure reliability valve.
Embodiment
This device comprises: corrosion cavity 1 and housing 2, cavity be provided with ozone or nitrogen inlet 1-1, by HF gas access 1-2 and the exhaust outlet 1-4 of nitrogen as carrier, silicon chip platform 4.
The ozone that uses in the utility model is that the method for common ultraviolet irradiation produces, and adopts the fluorescent tube of the ultraviolet light of wavelength X=185nm, irradiation oxygen molecule (O
2) decompose and aggregate into ozone (O
3).Ozone gets in the corrosion cavity of sealing; Contact with silicon chip surface, rapidly silicon chip surface is oxidized to fine and close oxide-film, and then hydrofluoric acid (HF) steam fog is brought in the corrosion cavity with nitrogen; Silicon chip platform below lowers the temperature simultaneously; Make the HF steam fog can be good at better oxide-film being eroded, enter special sour discharge duct through steam vent 1-4 more than gas at the silicon chip surface congealing reaction.Continue then in the corrosion cavity of sealing, to feed nitrogen, to guarantee the no longer including HF steam fog in the cavity, the lid that can open the corrosion cavity takes out silicon chip carries out silicon chip surface to next silicon chip scanning means scanning and sample collection.
The concrete operations step:
The first step: silicon chip is put on the support column of corrosion device silicon chip platform; Close the lid of corrosion cavity again; Open valve V1, V2, make oxygen get into ozone generator, the ozone of generation gets into cavity through flow controller and valve V2; The valve V5 of gas extraction system opens simultaneously, and process control was at 3 to 5 minutes;
Second step: valve-off V1, V2, open valve V3, V4, make nitrogen through pressure-control valve and flow control; The a part of entering in the HF container, HF concentration is 38%, and the HF atomizing is sent in the corrosion cavity; Another part is brought the HF steam fog that produces in the HF container into cavity by the road through valve V3, the V4 of series connection; Silicon chip platform below uses common recirculated cooling water device that silicon chip is lowered the temperature simultaneously, uses thermostat that temperature is controlled at 14 ℃-16 ℃, and the time is controlled between 10 minutes to 15 minutes; In this process, guarantee that total nitrogen pressure is not less than 1000hPa; Simultaneously, because the danger of HF gets into HF container place at nitrogen; Adorn a pressure reliability valve V7; When this road nitrogen pressure during greater than 500hPa, open automatically, (this step adopts existing model to be: this step in the WSPS PAD-Fume equipment) to carry out exhaust.
The 3rd step: valve-off V3, V4, open valve V2, make nitrogen continue to get into cavity, HF remaining in the cavity to be discharged through steam vent, process control got final product at 6 to 8 minutes.Can open the lid of cavity at last, silicon chip is fetched into scanning and the sample collection that next silicon chip scanning means carries out silicon chip surface.
Claims (3)
1. a surface treatment and corrosion device that is used for the silicon chip surface sample preparation; It comprises: corrosion cavity (1), housing (2); Be provided with silicon chip platform (4) and logical ozone or nitrogen inlet (1-1) in the cavity, by HF gas access (1-2) and the exhaust outlet (1-4) of nitrogen as carrier; Also comprise the HF container (5) of peripheral hardware, it is characterized in that: inlet (1-1) the serial connection valve V2 of logical ozone or nitrogen, flow control valve MFC
1, MFC
1Another termination threeway, a termination nitrogen pipeline of threeway, the outlet on another termination ozonizer road of threeway.
2. a kind of surface treatment and corrosion device that is used for the silicon chip surface sample preparation according to claim 1 is characterized in that: comprise ozone generator (6) in the ozone pipeline, ozone generator is oxygen forms ozone through ultraviolet irradiation a ozone generator.
3. a kind of surface treatment and corrosion device that is used for the silicon chip surface sample preparation according to claim 1 is characterized in that: described by being provided with flow control valve MFC in the HF gas access pipeline of nitrogen as carrier
2And nitrogen pressure control valve V6.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120521680 CN202434471U (en) | 2011-12-14 | 2011-12-14 | Surface processing and corrosion device for carrying out sample preparation on surface of silicon chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201120521680 CN202434471U (en) | 2011-12-14 | 2011-12-14 | Surface processing and corrosion device for carrying out sample preparation on surface of silicon chip |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202434471U true CN202434471U (en) | 2012-09-12 |
Family
ID=46783898
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201120521680 Expired - Lifetime CN202434471U (en) | 2011-12-14 | 2011-12-14 | Surface processing and corrosion device for carrying out sample preparation on surface of silicon chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202434471U (en) |
-
2011
- 2011-12-14 CN CN 201120521680 patent/CN202434471U/en not_active Expired - Lifetime
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103165407B (en) | A kind of for the surface treatment of silicon slice surface sample preparation and the technique of corrosion and device | |
| CN101800264B (en) | Process for texturing crystalline silicon solar cell by dry etching | |
| TWI591022B (en) | Fluorine-containing water treatment method and treatment device | |
| CN101891161A (en) | Preparation method of ultra-pure sulfuric acid | |
| TWI815714B (en) | Device and method for collecting metal ions at the edge of silicon wafer | |
| CN104741335A (en) | Method for cleaning quartz boat for diffusion | |
| US5846387A (en) | On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing | |
| CN202434471U (en) | Surface processing and corrosion device for carrying out sample preparation on surface of silicon chip | |
| CN104591462B (en) | A kind of fluoride coprecipitation processing highly acid height fluorine waste water | |
| CN105932097A (en) | Silicon chip oxidation method | |
| CN106621757B (en) | Chlorosilane analysis waste gas recovery treatment device and treatment method | |
| CN205248242U (en) | A surface corrosion device that before is used for silicon chip surface system appearance | |
| JP3437716B2 (en) | Semiconductor substrate cleaning method and cleaning apparatus used therefor | |
| CN101706473B (en) | Method and device for detecting purity of trichlorosilane | |
| CN101293625B (en) | Apparatus and method for recycling discharged gas in enclosed pour-in process of phynol, acetone | |
| CN203128192U (en) | Preparation device of chemical reagent for improving surface sample preparation of silicon wafer | |
| WO1996039264A1 (en) | On-site manufacture of ultra-high-purity hydrochloric acid for semiconductor processing | |
| CN207556918U (en) | A kind of hydrofluoric acid sampler | |
| CN112337271A (en) | Water removal method and device for hydrogen chloride steel cylinder | |
| KR101856854B1 (en) | Apparatus for hydrogen-dissolving water | |
| JP2013138097A (en) | Acid mixture liquid recovery system, acid mixture liquid recovery method, and silicon material cleaning method | |
| JP2002148156A (en) | Sampling vessel for metal impurity | |
| CN204637983U (en) | The device of purifying is reclaimed in cold-rolled steel sheet heat treatment with nitrogen hydrogen mixed tail gas | |
| CN219292245U (en) | Apparatus for cleaning SiC powder | |
| JP5037748B2 (en) | Ozone water concentration adjustment method and ozone water supply system |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM Semiconductor Materials Co., Ltd. |
|
| ASS | Succession or assignment of patent right |
Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150612 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20150612 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: You Yan Semi Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
|
| CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20120912 |
|
| CX01 | Expiry of patent term |