CN203049079U - Polycrystalline silicon vacuum zone-melting coil - Google Patents
Polycrystalline silicon vacuum zone-melting coil Download PDFInfo
- Publication number
- CN203049079U CN203049079U CN 201220641842 CN201220641842U CN203049079U CN 203049079 U CN203049079 U CN 203049079U CN 201220641842 CN201220641842 CN 201220641842 CN 201220641842 U CN201220641842 U CN 201220641842U CN 203049079 U CN203049079 U CN 203049079U
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- cutting
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- seam
- coil rack
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Abstract
The utility model provides a polycrystalline silicon vacuum zone-melting coil which comprises a coil framework and a coil cooling water pipe, wherein the coil cooling water pipe is welded and embedded in the coil framework. The polycrystalline silicon vacuum zone-melting coil is characterized by being in a flat single-turn structure, wherein the upper surface of the coil framework is provided with a step sunk inwards the coil; and one end of the bottom of the step is connected with the upper edge of an inner circle of the coil framework to form an inclined surface which forms an inclined angle with the horizontal surface. The polycrystalline silicon vacuum zone-melting coil has the beneficial effects that a heat file is uniform, the silicon melting running is smooth, the silicon forming rate is high.
Description
Technical field
The utility model belongs to the zone melting technique field, especially relates to a kind of district's fuse circle for the silicon single-crystal preparation.
Background technology
Zone-melted silicon single crystal stable extremely important in process of growth, during preparation as occur that polysilicon edge lunge, melting zone solidify, situations such as waistband appears in the melting zone, the stove that collapses all will be interrupted whole process of preparation.Therefore, a thermal field stable, that be used for zone-melted silicon single crystal uniformly is very important.The core of thermal field is heater coil, and conventional step coil is prone to molten silicon when using the major diameter polycrystal descending smooth as going out bunch, going out the waistband phenomenon, influences crystal forming rate.
In addition, conventional single-turn circular coil has a main seam, and conventional single-turn circular coil has a main seam, for the pair of opening that the thermal field condition that reaches relative equilibrium need be relative with main seam is stitched, but along with the change of single crystal diameter is big, the degree of irregularity of thermal field is obvious, changes and expects into brilliant difficulty.
Summary of the invention
Problem to be solved in the utility model provide a kind of thermal field evenly, descending smooth and easy, a kind of polysilicon vacuum district fuse circle that crystal forming rate is high of molten silicon.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: comprise coil rack and coil water-cooled tube, described coil water-cooled tube welding embeds in the described coil rack, it is characterized in that: described coil is dull and stereotyped single turn structure, the upper surface of described coil rack is provided with to the step of coil inside depression, the circle upper edge connects into the inclined-plane in described step bottom one end and the described coil rack, horizontal by a pitch angle;
Described coil rack inner circle has the cross joint-cutting that connects upper and lower surface, be respectively first joint-cutting, second joint-cutting, the 3rd joint-cutting and the 4th joint-cutting, be provided with the flange of connection electrode along a side of the first joint-cutting direction at described coil rack cylindrical, have a main seam between described flange and first joint-cutting, also have the first secondary seam, the second secondary seam and the 3rd secondary seam in the direction of described coil rack upper edge second joint-cutting, the 3rd joint-cutting and the 4th joint-cutting, the width of described main seam and secondary seam is all less than the width of described cross joint-cutting.
The length of the described first secondary seam, the second secondary seam and the 3rd secondary seam is 10-300mm.
Advantage and the positively effect that the utlity model has are: owing to adopt technique scheme, the design of secondary seam, the effectively balanced asymmetry of thermal field, the design of step inclined-plane coil, can the improvement material, solve on the waist and wrap up the not problem of melted silicon, can improve crystal forming rate and qualification rate effectively.
Description of drawings
Fig. 1 is schematic top plan view of the present utility model
Fig. 2 be Fig. 1 the A-A diagrammatic cross-section
Among the figure:
1, coil rack 2.1, joint-cutting 2.2, joint-cutting
2.3, joint-cutting 2.4, joint-cutting 3, flange
4, main seam 5.1, secondary seam 5.2, secondary seam
5.3, secondary seam 6, step 7, inclined-plane
8, water-cooled tube
Embodiment
As shown in Figure 1, 2, the utility model comprises coil rack 1 and coil water-cooled tube 8, and 8 welding of coil water-cooled tube embed in the coil rack 1.This structure can improve water-cooled effect, is easy to the processing of coil surface simultaneously.
Described coil is dull and stereotyped single turn structure, and the upper surface of described coil rack 1 is provided with to the step 6 of coil inside depression, and the circle upper edge connects into inclined-plane 7 in described step 6 bottoms, one end and the described coil rack 1, horizontal by a pitch angle; Step 6 all is slightly larger than the diameter of polysilicon, and this structure strengthens the described local electromagnetic field that produces of heater coil for preparing silicon single-crystal for zone melting method, avoids the polysilicon outer of larger diameter size burr to occur; Inclined-plane 7 can make electromagnetic field energy unlikely reduction gradually from inside to outside, is the smooth and ecto-entad inclination in polycrystalline fusing interface, and the molten silicon in fusing interface is tending towards flowing to the center, melting zone, has increased the flowability of molten silicon.
More than an embodiment of the present utility model is had been described in detail, but described content only is preferred embodiment of the present utility model, can not be considered to for limiting practical range of the present utility model.All equalizations of doing according to the utility model application range change and improve etc., all should still belong within the patent covering scope of the present utility model.
Claims (2)
1. polysilicon vacuum district fuse circle, comprise coil rack and coil water-cooled tube, described coil water-cooled tube welding embeds in the described coil rack, it is characterized in that: described coil is dull and stereotyped single turn structure, the upper surface of described coil rack is provided with to the step of coil inside depression, the circle upper edge connects into the inclined-plane in described step bottom one end and the described coil rack, horizontal by a pitch angle;
Described coil rack inner circle has the cross joint-cutting that connects upper and lower surface, be respectively first joint-cutting, second joint-cutting, the 3rd joint-cutting and the 4th joint-cutting, be provided with the flange of connection electrode along a side of the first joint-cutting direction at described coil rack cylindrical, have a main seam between described flange and first joint-cutting, also have the first secondary seam, the second secondary seam and the 3rd secondary seam in the direction of described coil rack upper edge second joint-cutting, the 3rd joint-cutting and the 4th joint-cutting, the width of described main seam and secondary seam is all less than the width of described cross joint-cutting.
2. district according to claim 1 fuse circle, it is characterized in that: the length of the described first secondary seam, the second secondary seam and the 3rd secondary seam is 10-300mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220641842 CN203049079U (en) | 2012-11-28 | 2012-11-28 | Polycrystalline silicon vacuum zone-melting coil |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220641842 CN203049079U (en) | 2012-11-28 | 2012-11-28 | Polycrystalline silicon vacuum zone-melting coil |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203049079U true CN203049079U (en) | 2013-07-10 |
Family
ID=48732056
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220641842 Expired - Lifetime CN203049079U (en) | 2012-11-28 | 2012-11-28 | Polycrystalline silicon vacuum zone-melting coil |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203049079U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087035A (en) * | 2016-07-29 | 2016-11-09 | 天津市环欧半导体材料技术有限公司 | A kind of loop construction of the molten radially resistivity evenness in upgrading area |
-
2012
- 2012-11-28 CN CN 201220641842 patent/CN203049079U/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106087035A (en) * | 2016-07-29 | 2016-11-09 | 天津市环欧半导体材料技术有限公司 | A kind of loop construction of the molten radially resistivity evenness in upgrading area |
| CN106087035B (en) * | 2016-07-29 | 2019-05-07 | 天津中环领先材料技术有限公司 | A kind of loop construction of the molten radial resistivity evenness in upgrading area |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181029 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191217 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130710 |