CN203049078U - Zone-melting coil for preparation of silicon single crystals - Google Patents
Zone-melting coil for preparation of silicon single crystals Download PDFInfo
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- CN203049078U CN203049078U CN 201220640902 CN201220640902U CN203049078U CN 203049078 U CN203049078 U CN 203049078U CN 201220640902 CN201220640902 CN 201220640902 CN 201220640902 U CN201220640902 U CN 201220640902U CN 203049078 U CN203049078 U CN 203049078U
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Abstract
The utility model provides a zone-melting coil for preparation of silicon single crystals. The zone-melting coil comprises a coil framework and a coil cooling water pipe, wherein the coil cooling water pipe is embedded into the coil framework in a welding manner. The zone-melting coil is characterized in that the coil is of a flat single-turn structure, the upper surface of the coil framework is provided with steps which are depressed towards inside of the coil, cross-shaped cutting seams, namely a first cutting seam, a second cutting seam, a third cutting seam and a fourth cutting seam along the clockwise direction, which penetrate through the upper surface and the lower surface, are respectively formed in the inner circle of the coil framework, a flange connected with an electrode is arranged on the outer circle of the coil framework along one side of the first cutting seam, a main seam is formed between the flange and the first cutting seam, the coil framework is also provided with an auxiliary seam along the third cutting seam, and the width of the main seam and the width of the auxiliary beam are respectively smaller than the width of each cross-shaped cutting seam. The zone-melting coil has the beneficial effects that the zone-melting coil, for preparation of the silicon single crystals, with uniform thermal field, descending smoothness of molten silicon and high crystallization ratio is provided.
Description
Technical field
The utility model belongs to the zone melting technique field, especially relates to a kind of district's fuse circle for the silicon single-crystal preparation.
Background technology
Zone-melted silicon single crystal stable extremely important in process of growth, during preparation as occur that polysilicon edge lunge, melting zone solidify, situations such as waistband appears in the melting zone, the stove that collapses all will be interrupted whole process of preparation.Therefore, a thermal field stable, that be used for zone-melted silicon single crystal uniformly is very important.The core of thermal field is heater coil, and conventional step coil is prone to molten silicon when using the major diameter polycrystal descending smooth as going out bunch, going out the waistband phenomenon, influences crystal forming rate.
In addition, conventional single-turn circular coil has a main seam, and conventional single-turn circular coil has a main seam, for the pair of opening that the thermal field condition that reaches relative equilibrium need be relative with main seam is stitched, but along with the change of single crystal diameter is big, the degree of irregularity of thermal field is obvious, changes and expects into brilliant difficulty.
Summary of the invention
Problem to be solved in the utility model provide a kind of thermal field evenly, descending smooth and easy, a kind of district's fuse circle for the silicon single-crystal preparation that crystal forming rate is high of molten silicon.
For solving the problems of the technologies described above, the technical solution adopted in the utility model is: a kind of district's fuse circle for the silicon single-crystal preparation, comprise coil rack and coil water-cooled tube, described coil water-cooled tube welding embeds in the described coil rack, it is characterized in that: described coil is dull and stereotyped single turn structure, the upper surface of described coil rack is provided with to the step of coil inside depression, and the circle upper edge connects into the inclined-plane in described step bottom one end and the described coil rack, horizontal by a pitch angle; Described coil rack inner circle has the cross joint-cutting that connects upper and lower surface, be respectively first joint-cutting, second joint-cutting, the 3rd joint-cutting and the 4th joint-cutting along clockwise direction, be provided with the flange of connection electrode along a side of the first joint-cutting direction at described coil rack cylindrical, have a main seam between described flange and first joint-cutting, described coil rack upper edge the 3rd joint-cutting direction also has a secondary seam, and the width of described main seam and secondary seam is all less than the width of described cross joint-cutting.
The length of described secondary seam is 10-300mm.
Advantage and the positively effect that the utlity model has are: owing to adopt technique scheme, the design of secondary seam, the effectively balanced asymmetry of thermal field, the design of step inclined-plane coil, can the improvement material, solve on the waist and wrap up the not problem of melted silicon, can improve crystal forming rate and qualification rate effectively.
Description of drawings
Fig. 1 is schematic top plan view of the present utility model
Fig. 2 be Fig. 1 the A-A diagrammatic cross-section
Among the figure:
1, coil rack 2.1, joint-cutting 2.2, joint-cutting
2.3, joint-cutting 2.4, joint-cutting 3, flange
4, main seam 5, secondary seam 6, step
7, inclined-plane 8, water-cooled tube
Embodiment
As shown in Figure 1, 2, the utility model comprises coil rack 1 and coil water-cooled tube 8, and 8 welding of coil water-cooled tube embed in the coil rack 1.This structure can improve water-cooled effect, is easy to the processing of coil surface simultaneously.
Described coil is dull and stereotyped single turn structure, and the upper surface of described coil rack 1 is provided with to the step 6 of coil inside depression, and the circle upper edge connects into inclined-plane 7 in described step 6 bottoms, one end and the described coil rack 1, horizontal by a pitch angle; Step 6 all is slightly larger than the diameter of polysilicon, and this structure strengthens the described local electromagnetic field that produces of heater coil for preparing silicon single-crystal for zone melting method, avoids the polysilicon outer of larger diameter size burr to occur; Inclined-plane 7 can make electromagnetic field energy unlikely reduction gradually from inside to outside, is the smooth and ecto-entad inclination in polycrystalline fusing interface, and the molten silicon in fusing interface is tending towards flowing to the center, melting zone, has increased the flowability of molten silicon.
More than an embodiment of the present utility model is had been described in detail, but described content only is preferred embodiment of the present utility model, can not be considered to for limiting practical range of the present utility model.All equalizations of doing according to the utility model application range change and improve etc., all should still belong within the patent covering scope of the present utility model.
Claims (2)
1. one kind is used for district's fuse circle that silicon single-crystal prepares, comprise coil rack and coil water-cooled tube, described coil water-cooled tube welding embeds in the described coil rack, it is characterized in that: described coil is dull and stereotyped single turn structure, the upper surface of described coil rack is provided with to the step of coil inside depression, the circle upper edge connects into the inclined-plane in described step bottom one end and the described coil rack, horizontal by a pitch angle; Described coil rack inner circle has the cross joint-cutting that connects upper and lower surface, be respectively first joint-cutting, second joint-cutting, the 3rd joint-cutting and the 4th joint-cutting along clockwise direction, be provided with the flange of connection electrode along a side of the first joint-cutting direction at described coil rack cylindrical, have a main seam between described flange and first joint-cutting, described coil rack upper edge the 3rd joint-cutting direction also has a secondary seam, and the width of described main seam and secondary seam is all less than the width of described cross joint-cutting.
2. district according to claim 1 fuse circle, it is characterized in that: the length of described secondary seam is 10-300mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220640902 CN203049078U (en) | 2012-11-28 | 2012-11-28 | Zone-melting coil for preparation of silicon single crystals |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220640902 CN203049078U (en) | 2012-11-28 | 2012-11-28 | Zone-melting coil for preparation of silicon single crystals |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203049078U true CN203049078U (en) | 2013-07-10 |
Family
ID=48732055
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220640902 Expired - Lifetime CN203049078U (en) | 2012-11-28 | 2012-11-28 | Zone-melting coil for preparation of silicon single crystals |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203049078U (en) |
-
2012
- 2012-11-28 CN CN 201220640902 patent/CN203049078U/en not_active Expired - Lifetime
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20181106 Address after: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Area (outside the ring) Hai Tai Road 12 Patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Address before: 300384 Tianjin Binhai New Area high tech Zone Huayuan Industrial Park (outside the ring) Hai Tai Road 12 Patentee before: TIANJIN HUANOU SEMICONDUCTOR MATERIAL TECHNOLOGY Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191212 Address after: 214200 Dongfen Avenue, Yixing Economic and Technological Development Zone, Wuxi City, Jiangsu Province Co-patentee after: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. Patentee after: Zhonghuan leading semiconductor materials Co.,Ltd. Address before: 300384 in Tianjin Binhai high tech Zone Huayuan Industrial Zone (outer ring) Haitai Road No. 12 Patentee before: TIANJIN ZHONGHUAN ADVANCED MATERIAL TECHNOLOGY Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130710 |