CN203037746U - Test device used for double-unit 73mm power device module capacitor - Google Patents
Test device used for double-unit 73mm power device module capacitor Download PDFInfo
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- CN203037746U CN203037746U CN 201320024327 CN201320024327U CN203037746U CN 203037746 U CN203037746 U CN 203037746U CN 201320024327 CN201320024327 CN 201320024327 CN 201320024327 U CN201320024327 U CN 201320024327U CN 203037746 U CN203037746 U CN 203037746U
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Abstract
The utility model discloses a test device used for a double-unit 73mm power device module capacitor comprising a test circuit. The test device also comprises a pedestal made of insulation materials and three pedestal pins disposed on the pedestal. The three pedestal pins are respectively a grid pedestal pin, a drain electrode pedestal pin, and a source pedestal pin. During the test, the three pedestal pins are respectively contacted with corresponding modules of the power device module, and the module pins comprises a grid module pin, a drain electrode module pin, and a source module pin. The utility model provides the test device used for the double-unit 73mm power device module capacitor, and the power device module can be used to guarantee the well contact between the module pins of the modules and the pins of the pedestal with the help of the own gravity, the elastic force of the lower spring, and the pressure of the upper cover plate, therefore the reliability of the connection can be guaranteed, less leads are used for the connection, and the parasitic effect can be greatly reduced.
Description
Technical field
The utility model relates to the field tests of power device module dynamic perfromance, particularly for the proving installation of IGBT two cell power device blocks dynamic perfromances.
Background technology
Power semiconductor device device junction capacity parameter generally comprises input capacitance, output capacitance, three contents of feedback capacity, is the important indicator of reaction member architectural characteristic, dynamic time parameter.According to the test condition requirement, need connect different measurement circuits, simultaneously according to the difference of the architectural characteristic of parameter in device during test, passive device elements such as external shunt capacitance, bypass resistance apply DC voltage and high-frequency signal is tested corresponding capacitance parameter to device pin.In the prior art, the method of measured power semiconductor devices junction capacity is generally: the connecting circuit between measured device and LCR (LCR) tester with test probe or crocodile clip, when adopting this method to test, at different tested junction capacity parameters, need to use different test circuits, not only test job is loaded down with trivial details, and testing efficiency is low.
In addition, the stray inductance in the measurement circuit or electric capacity can be coupled in the test result, cause the error of test result.Because 73mm IGBT module volume is big, pin-pitch is big, is easy to during test because test lead is long to be caused test result inaccurate by peripheral spuious Electromagnetic Interference.
Existing method of testing is that the screw of corresponding size is installed at three utmost point places in the middle of the power device module, uses crocodile clip to clamp screw then,, is connected with the switching characteristic measuring instrument then to module different poles lead-in wire with the method for bonding wire or coiling.
The shortcoming that existing method of testing exists: during this method test component switching characteristic, module of every survey all needs thread-changing, troublesome poeration not only, make mistakes easily, test speed is slow, efficient is low, and crocodile clip partly exposes in Metal Contact, and external signal produces the high-frequency test signal easily and disturbs, particularly outer spreading line test can be introduced more ghost effect, has a strong impact on test result; The operator causes accidents such as short circuit, electric shock easily as because of carelessness simultaneously, causes equipment, device failure, and is also relatively poor to safety of persons.In addition, the pin of welding generally links to each other with device grids, and the high temperature during welding also causes damage to grid easily.
The utility model content
The proving installation that is used for the 73 millimeters power device module capacitance in Unit two that the utility model provides, having solved the existing behaviour who exists for the proving installation of the 73 millimeters power device module capacitance in Unit two bothers, make mistakes slow, the inefficient problem of test speed easily.
In order to solve the problems of the technologies described above, the proving installation that is used for the 73 millimeters power device module capacitance in Unit two that the utility model provides comprises test circuit, and proving installation also comprises:
Base, it is made by insulating material;
Be provided with three base pins at described base, be grid base pin, drain electrode base pin and source electrode base pin, when test, described three base pins contact with corresponding module pin on the power device module respectively, and described module pin has comprised grid module pin, drain electrode module pin and source electrode module pin.
Further, this proving installation also comprises:
Metal case is placed with described base in it.
Further, also be provided with power connector end mouth and low-voltage current connectivity port on described base or metal case, described power connector end mouth is connected with power connection points, and described low-voltage current connectivity port is connected with the low-voltage current tie point.
Further, be provided with to place the groove of described power device module in the middle of the described base, described base pin is located in the described groove.
Further, described base pin is pogo pin.
Further, this proving installation also comprises:
Be used for the power device module is compressed and be fixed on stationary installation on the described base, the one end comprises clamp, and is arranged on the draw-in groove on the described base;
The other end of described stationary installation and described base flexibly connect.
Further, this proving installation also comprises: be used for to select the station selector switch of the module half-bridge that will test, it is arranged on the described base or on the metal case.
Further, this proving installation also comprises: the switch module that can test, drain at source electrode and switch between three kinds of tests of test and grid test, it is arranged on the described base or on the metal case.
The proving installation that is used for the 73 millimeters power device module capacitance in Unit two that the utility model provides, the power device module relies on the pressure of the elastic force of the gravity of self, following spring and top cover plate that the module pin on the module is contacted well with pin on the negative, guaranteed the reliability that connects, less use lead-in wire connects, and has reduced ghost effect significantly.Because need be at module grid bonding wire, have eliminated the risk of destroying the module grid because produce high temperature during welding.
Description of drawings
Fig. 1 is the connection diagram of the proving installation test circuit that is used for the 73 millimeters power device module capacitance in Unit two that provides of the utility model;
Fig. 2 is the proving installation vertical view that is used for the 73 millimeters power device module capacitance in Unit two that the utility model provides;
Fig. 3 is the perspective view of the proving installation that is used for the 73 millimeters power device module capacitance in Unit two that provides of the utility model;
Reference numeral:
Base-18, cover plate-19, cover plate buckle-20, slot cover-21, groove-22, gold plating spring pin-23, translation interface-24, switch module-25, station selector switch-26, hinge-27.
Embodiment
The proving installation that is used for the 73 millimeters power device module capacitance in Unit two that the embodiment of the invention provides, the test circuit that comprises comprises:
As shown in Figure 1,14, two transistor units 16 of the second II feedback capacity have source electrode test point 5, drain electrode test point 3 and grid test point 4.Drain electrode test point 3 is connected in power connection points 1, grid test point 4 is connected in low-voltage current tie point 2, source electrode test point 5 is connected in an end of resistance 6, the other end of resistance 6 is connected in low-voltage current tie point 2, I input capacitance 9 is connected in power connection points 1 by short circuit capacitance 8, I output capacitance 10 and the 11 unsettled settings of I feedback capacity, II input capacitance 12 is connected in ground voltage tie point 7 by inductance 15, II output capacitance 13 is connected in low-voltage current tie point 2, the II feedback capacities 14 and is connected in ground voltage tie point 7.
Wherein, source electrode test point 5 can form by two transistor units source electrode separately is continuous.
Wherein, drain electrode test point 3 can form by two transistor unit drain electrodes separately are continuous.
Wherein, grid test point 4 can form by two transistor units grid separately is continuous.
The proving installation that is used for the 73 millimeters power device module capacitance in Unit two that the embodiment of the invention provides in the metal case that comprises, is provided with base, shows that as Fig. 2 and Fig. 3 power device is positioned on the base; Base is provided with power connector end mouth, low-voltage current connectivity port, and power connection points 1 is connected in the power connector end mouth, and low-voltage current tie point 2 is connected in the low-voltage current connectivity port; Base is provided with switch module 25, and switch module 25 includes three switch contacts, and 3 of source electrode test points 5, drain electrode test are connected with a switch contact respectively with grid test point 4; Also be provided with L, L, H and four translation interfaces 24 of H on the base, use translation interface 24 and testing tool on the BNC concentric cable connection metal case.
Wherein, base 18 is made by insulating material.Be provided with three base pins at base 18, i.e. grid base pin, drain electrode base pin and source electrode base pin, the base pin can be pogo pin, and is gold plating spring pin 23.When test, three base pins contact with corresponding module pin on the power device module respectively, the module pin has comprised grid module pin, drain electrode module pin and source electrode module pin, thereby makes each pin fixing more firm of two transistor units in the module.
Wherein, be provided with to place the groove of described power device module in the middle of the described base 18, three base pins are located in the described groove.
Wherein, this proving installation also comprises: be used for the power device module is compressed and be fixed on stationary installation on the described base, it comprises cover plate 19 and clamping apparatus, one end of this cover plate 19 is connected by loose-leaf 27 with base 18, the other end comprises clamp, be that cover plate buckles 20, be provided with slot cover 21 on the base 18 accordingly.Power device is positioned over cover plate 19 and cover plate is buckled between 20, thus make between power device and the base contact more firm.
Wherein, this proving installation also comprises: for the station selector switch 26 of the module half-bridge of selecting to test, it is arranged on the described base 18.
Wherein, switch module 25 can be change-over switch, and change-over switch can be switched between the switch contact of source electrode test point 5, drain electrode test point 3 and grid test point 4, thereby, make the switching of test point can realize that this has just saved the replacing time by switch module, can improve testing efficiency.
The power semiconductor device junction capacity test circuit that the utility model provides and device can be applicable to the 62mm power device that comprises two transistor units.
It should be noted last that, above embodiment is only unrestricted in order to the technical solution of the utility model to be described, although with reference to example the utility model is had been described in detail, those of ordinary skill in the art is to be understood that, can make amendment or be equal to replacement the technical solution of the utility model, and not breaking away from the spirit and scope of technical solutions of the utility model, it all should be encompassed in the middle of the claim scope of the present utility model.
Claims (8)
1. be used for the proving installation of the 73 millimeters power device module capacitance in Unit two, comprise test circuit, it is characterized in that described proving installation also comprises:
Base, it is made by insulating material;
Be provided with three base pins at described base, be grid base pin, drain electrode base pin and source electrode base pin, when test, described three base pins contact with corresponding module pin on the power device module respectively, and described module pin has comprised grid module pin, drain electrode module pin and source electrode module pin.
2. proving installation as claimed in claim 1 is characterized in that, this proving installation also comprises:
Metal case is placed with described base in it.
3. proving installation as claimed in claim 2, it is characterized in that, also be provided with power connector end mouth and low-voltage current connectivity port on described base or metal case, described power connector end mouth is connected with power connection points, and described low-voltage current connectivity port is connected with the low-voltage current tie point.
4. proving installation as claimed in claim 1 is characterized in that, is provided with to place the groove of described power device module in the middle of the described base, and described base pin is located in the described groove.
5. proving installation as claimed in claim 4 is characterized in that, described base pin is pogo pin.
6. proving installation as claimed in claim 5 is characterized in that, this proving installation also comprises:
Be used for the power device module is compressed and be fixed on stationary installation on the described base, the one end comprises clamp, and is arranged on the draw-in groove on the described base;
The other end of described stationary installation and described base flexibly connect.
7. proving installation as claimed in claim 6 is characterized in that, this proving installation also comprises: be used for to select the station selector switch of the module half-bridge that will test, it is arranged on the described base or on the metal case.
8. proving installation as claimed in claim 7 is characterized in that, this proving installation also comprises: the switch module that can test, drain at source electrode and switch between three kinds of tests of test and grid test, it is arranged on the described base or on the metal case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320024327 CN203037746U (en) | 2013-01-17 | 2013-01-17 | Test device used for double-unit 73mm power device module capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201320024327 CN203037746U (en) | 2013-01-17 | 2013-01-17 | Test device used for double-unit 73mm power device module capacitor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN203037746U true CN203037746U (en) | 2013-07-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201320024327 Expired - Lifetime CN203037746U (en) | 2013-01-17 | 2013-01-17 | Test device used for double-unit 73mm power device module capacitor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN203037746U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108333433A (en) * | 2018-01-08 | 2018-07-27 | 杭州长川科技股份有限公司 | Junction capacity parameter detecting circuit and its test method |
| CN110456246A (en) * | 2019-06-18 | 2019-11-15 | 天津工业大学 | A kind of the test circuit and compression bonding apparatus of high frequency power semiconductor devices |
-
2013
- 2013-01-17 CN CN 201320024327 patent/CN203037746U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108333433A (en) * | 2018-01-08 | 2018-07-27 | 杭州长川科技股份有限公司 | Junction capacity parameter detecting circuit and its test method |
| CN108333433B (en) * | 2018-01-08 | 2020-05-05 | 杭州长川科技股份有限公司 | Junction capacitance parameter test circuit and test method thereof |
| CN110456246A (en) * | 2019-06-18 | 2019-11-15 | 天津工业大学 | A kind of the test circuit and compression bonding apparatus of high frequency power semiconductor devices |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130703 |