CN202949042U - Fe/SiO2纳米多层膜电磁波吸波材料 - Google Patents
Fe/SiO2纳米多层膜电磁波吸波材料 Download PDFInfo
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- CN202949042U CN202949042U CN 201220698487 CN201220698487U CN202949042U CN 202949042 U CN202949042 U CN 202949042U CN 201220698487 CN201220698487 CN 201220698487 CN 201220698487 U CN201220698487 U CN 201220698487U CN 202949042 U CN202949042 U CN 202949042U
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CN 201220698487 CN202949042U (zh) | 2012-12-14 | 2012-12-14 | Fe/SiO2纳米多层膜电磁波吸波材料 |
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CN 201220698487 CN202949042U (zh) | 2012-12-14 | 2012-12-14 | Fe/SiO2纳米多层膜电磁波吸波材料 |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104716440A (zh) * | 2015-03-27 | 2015-06-17 | 电子科技大学 | 一种基于磁性薄膜的电磁吸波体结构及其设计方法 |
CN107342148A (zh) * | 2017-06-13 | 2017-11-10 | 电子科技大学 | 一种宽频带吸波多层薄膜及其制备方法 |
CN113050205A (zh) * | 2019-12-27 | 2021-06-29 | 比亚迪股份有限公司 | 黑色材料及其制备方法和应用 |
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2012
- 2012-12-14 CN CN 201220698487 patent/CN202949042U/zh not_active Expired - Lifetime
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104716440A (zh) * | 2015-03-27 | 2015-06-17 | 电子科技大学 | 一种基于磁性薄膜的电磁吸波体结构及其设计方法 |
CN107342148A (zh) * | 2017-06-13 | 2017-11-10 | 电子科技大学 | 一种宽频带吸波多层薄膜及其制备方法 |
CN113050205A (zh) * | 2019-12-27 | 2021-06-29 | 比亚迪股份有限公司 | 黑色材料及其制备方法和应用 |
CN113050205B (zh) * | 2019-12-27 | 2021-09-21 | 比亚迪股份有限公司 | 黑色材料及其制备方法和应用 |
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Legal Events
Date | Code | Title | Description |
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C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
CB03 | Change of inventor or designer information |
Inventor after: Liu Cheng Inventor after: Gu Dawei Inventor after: Peng Chuancai Inventor after: Ma Jiefang Inventor before: Liu Cheng Inventor before: Li Jingzeng Inventor before: Peng Chuancai Inventor before: Ma Jiefang |
|
COR | Change of bibliographic data | ||
TR01 | Transfer of patent right |
Effective date of registration: 20161229 Address after: Kangtuo science and Technology Building No. 61 Beijing 100190 Haidian District Zhichun Road 8 Patentee after: Beijing Tianyu new aerospace Mstar Technology Ltd. Address before: 100080 Haidian District, Zhichun Road, No. 61, Patentee before: BEIJING CONTROL TECHNOLOGY Co.,Ltd. |
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CX01 | Expiry of patent term |
Granted publication date: 20130522 |
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CX01 | Expiry of patent term |