CN202918013U - Drive circuit of solar energy charging loop MOS tube - Google Patents
Drive circuit of solar energy charging loop MOS tube Download PDFInfo
- Publication number
- CN202918013U CN202918013U CN 201220570107 CN201220570107U CN202918013U CN 202918013 U CN202918013 U CN 202918013U CN 201220570107 CN201220570107 CN 201220570107 CN 201220570107 U CN201220570107 U CN 201220570107U CN 202918013 U CN202918013 U CN 202918013U
- Authority
- CN
- China
- Prior art keywords
- utmost point
- triode
- drive circuit
- resistance
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Control Of Electrical Variables (AREA)
Abstract
The present utility model discloses a drive circuit of a solar energy charging loop MOS tube. The drive circuit comprises the solar energy charging loop with an MOS tube Q1. The drive circuit is characterized in that a control end of the MOS tube Q1 is provided with a first grade drive circuit (1) and a second grade drive circuit (2); the first grade drive circuit (1) is formed by a microcontroller IC1, triodes (Q4-Q6), resistors (R2-R7) and a switch diode D1, the second grade drive circuit (2) is formed by a voltage stabilizing module (U1), a resistor (R1), driving triodes (Q2-Q3) and a filtering capacitor EC1; an output end of the microcontroller IC1 is connected with an input end of the second grade drive circuit (2) after successively passing through the triodes(Q6, Q5, Q4), the driving triodes(Q2,Q3) are connected in parallel, the output end is connected with a control end of the MOS tube Q1, an input end is connected with the first grade drive circuit (1), a voltage input end of the voltage stabilizing module (U1) connected with charging voltage of the solar energy charging loop, and a voltage output end is connected with the control end of the MOS tube Q1 through the driving triodes (Q2,Q3). By adopting the drive circuit, losses can be reduced, heating of the MOS tube can be reduced, and the MOS tube can be prevented from being burnt.
Description
Technical field
The utility model relates to a kind of drive circuit of metal-oxide-semiconductor, the drive circuit of metal-oxide-semiconductor in especially a kind of solar recharging loop.Belong to the solar charging electro-technical field.
Background technology
At present, semiconductor device development is swift and violent, and metal-oxide-semiconductor is high because of its switching frequency, the machinery-free loss, and switch replaces relay gradually without spark phenomenon become dc switch control element main on the control board.But in actual applications, there are various parasitic capacitances in metal-oxide-semiconductor, thereby in order to reach fast conducting and to turn-off the purpose that metal-oxide-semiconductor reduces switching loss as far as possible, usually can adopt transistor to form peripheral metal-oxide-semiconductor drive circuit.
As shown in Figure 1 and Figure 2, manage Q1 by PNP in the prior art, it is to use on the market the most extensively now and the plug-type driving of transistor homophase the most to one's profit that NPN pipe Q2 forms the MOSFET driving, sort circuit is simple in structure, principle understands, very effective to control current spikes, power loss, make PWM control more favourable, can be applied on the charging circuit of most fixed power source to the battery charging.
But in the switch control of solar charging circuit, as shown in Figure 2, if adopt the plug-type driving of transistor, required power supply will be provided by storage battery, the moment that does not have conducting at metal-oxide-semiconductor, solar cell and storage battery are ground altogether not, the metal-oxide-semiconductor gate drive voltage does not have reference point to solar cell, PWM control was lost efficacy, and the junction capacitance that metal-oxide-semiconductor itself exists make circuit at the in a flash metal-oxide-semiconductor of energising just by lightly conducting, so metal-oxide-semiconductor is in incomplete conducting state always, metal-oxide-semiconductor in this state switching loss obviously strengthens, heating is serious, when electric current is larger even cause metal-oxide-semiconductor to burn.Therefore, the plug-type driving of the transistor of prior art, the switch control of inapplicable solar charging circuit.
In sum, need to provide a kind of can in the situation that solar cell and battery not altogether fully the drive circuit of turn-on and turn-off metal-oxide-semiconductor solve above problem.
The utility model content
The purpose of this utility model is for the plug-type driving of the transistor that solves above-mentioned prior art, and the problem of the switch of inapplicable solar charging circuit control provides the drive circuit of metal-oxide-semiconductor in a kind of solar recharging loop.It has characteristics simple in structure, that reliability is high, cost is low.
The purpose of this utility model can reach by the following technical programs:
The drive circuit of metal-oxide-semiconductor in a kind of solar recharging loop comprises the solar recharging loop with metal-oxide-semiconductor Q1, it is characterized in that:
1) control end at metal-oxide-semiconductor Q1 is provided with first order drive circuit and second level drive circuit; First order drive circuit is made of microcontroller IC1, triode Q4～Q6, resistance R 2～R7 and switching diode D1, and second level drive circuit is by Voltage stabilizing module U1, resistance R 1, driving triode Q2～Q3 and filter capacitor EC1; The output of microcontroller IC1 connects the input of second level drive circuit successively by triode Q6, Q5, Q4, drive control end, its input that triode Q2, Q3 are connected in parallel, its output connects metal-oxide-semiconductor Q1 and connect first order drive circuit, the voltage input end of Voltage stabilizing module U1 connects the charging voltage in solar recharging loop, voltage output end connects metal-oxide-semiconductor Q1 by driving triode Q2～Q3 control end;
2) utilize the variation of current potential under the metal-oxide-semiconductor Q1 turn-on and turn-off state, realize the PWM of second level drive circuit is driven control with first order drive circuit, in the situation on the extremely floating ground of S of metal-oxide-semiconductor Q1 at the beginning, make metal-oxide-semiconductor Q1 enter normal operating conditions; Enter operating state and have energy when electricity just automatically to charge the battery at solar charging circuit, cross at solar array voltage and stop charging when low.
The purpose of this utility model can also reach by the following technical programs:
A kind of Technological improvement plan of the present utility model is: in the first order drive circuit, resistance R 7 is connected between the pin 11 and pin 20 of microcontroller IC1, resistance R 2 is connected between the B utmost point and the E utmost point of triode Q4, resistance R 4 is connected between the B utmost point and the E utmost point of triode Q5, the B utmost point of triode Q6 connects the pin 11 of microcontroller IC1 and the common port of resistance R 7 by resistance R 6, the C utmost point is by the B utmost point of resistance R 5 connecting triode Q5 and the common port of resistance R 4, and the C utmost point of triode Q5 is successively by switching diode D1, the B utmost point of resistance R 3 connecting triode Q4 and the common port of resistance R 2; In the drive circuit of the second level, filter capacitor EC1 is connected between the pin 2 and pin 3 of Voltage stabilizing module U1, one end of resistance R 1 connects the C utmost point that drives triode Q2 is connected pin 3 and is connected the E utmost point that drives triode Q2 and the E utmost point that drives triode Q3 with common port, the other end of filter capacitor EC1 with Voltage stabilizing module U1, the G utmost point of described metal-oxide-semiconductor Q1 connects the E utmost point that drives triode Q2 and the E utmost point of driving triode Q3; Drive the E utmost point and the common port of resistance R 2, the C utmost point of described triode Q4 and the pin that the B utmost point is connected, the E utmost point is connected Voltage stabilizing module U1 2 of driving triode Q3 and the common port of filter capacitor EC1 of the C utmost point connecting triode Q4 of triode Q3.
A kind of Technological improvement plan of the present utility model is: described resistance R 1, R5 and R6 can consist of current-limiting resistance, and resistance R 4 and R7 can consist of pull-up resistor, and resistance R 2 and R3 can consist of divider resistance.
A kind of Technological improvement plan of the present utility model is: the E utmost point of the 20th pin of described microcontroller IC1 and the common port of resistance R 7, triode Q5 and the common port of resistance R 4 can connect the 5V power supply.
A kind of Technological improvement plan of the present utility model is: the D of the pin 10 of described microcontroller IC1, the E utmost point of triode Q6, metal-oxide-semiconductor Q1 extremely can ground connection.
A kind of Technological improvement plan of the present utility model is: the pin 1 of described Voltage stabilizing module U1 can connect the solar cell positive pole.
A kind of Technological improvement plan of the present utility model is: the pin 2 of described Voltage stabilizing module U1 is connected the solar cell negative pole with the E utmost point of the common port of filter capacitor EC1, triode Q4 with the common port of resistance R 2, the S utmost point of metal-oxide-semiconductor Q1.
The purpose of this utility model can also reach by the following technical programs:
A kind of embodiment of the present utility model is: described resistance R 1, R5 and R6 are current-limiting resistance, and resistance R 4 and R7 are pull-up resistor, and resistance R 2 and R3 are divider resistance.
A kind of embodiment of the present utility model is: the E utmost point of the 20th pin of described microcontroller IC1 and the common port of resistance R 7, triode Q5 and the common port of resistance R 4 can connect the 5V power supply.
A kind of embodiment of the present utility model is: the D of the pin 10 of described microcontroller IC1, the E utmost point of triode Q6, metal-oxide-semiconductor Q1 extremely can ground connection.
A kind of embodiment of the present utility model is: the pin 1 of described Voltage stabilizing module U1 can connect the solar cell positive pole.
A kind of embodiment of the present utility model is: the pin 2 of described Voltage stabilizing module U1 extremely can be connected the solar cell negative pole with the E utmost point of the common port of filter capacitor EC1, triode Q4 with the common port of resistance R 2, the S of metal-oxide-semiconductor Q1.
The utlity model has following outstanding beneficial effect:
1, the utility model is owing to utilizing the variation of current potential under the metal-oxide-semiconductor Q1 turn-on and turn-off state, realize the PWM of second level drive circuit is driven control with first order drive circuit and resistance, in the situation on the extremely floating ground of S of metal-oxide-semiconductor Q1 at the beginning, make metal-oxide-semiconductor Q1 enter normal operating conditions; After solar charging circuit is entering operating state; as long as solar cell has energy just can automatically charge the battery; cross the low charging that then stops when solar array voltage, therefore can protect solar cell, have reducing the wastage, reduce the metal-oxide-semiconductor heating, prevent the beneficial effect that metal-oxide-semiconductor burns.Extensively be fit to be widely used in the MOS driving of solar charging circuit.
2, whole circuit of the present utility model all is conventional components and parts, and is simple in structure, reliability is high, cost is low, and the machine maintenance of using this circuit is convenient, has broad application prospects.
Description of drawings
Fig. 1, Fig. 2 are the metal-oxide-semiconductor driving circuit principle figure of prior art fixed power source charging circuit.
Fig. 3 is the circuit theory diagrams of the utility model specific embodiment 1.
Wherein, 1-first order drive circuit, 2-second level drive circuit, the Q1-MOS pipe, Q2, Q3-drive triode, Q4, Q5, Q6-triode, R1～R7-resistance, D1-switching diode, EC1-filter capacitor, U1-Voltage stabilizing module.
Embodiment
Specific embodiment 1:
Fig. 3 consists of specific embodiment of the utility model 1.
With reference to Fig. 3, the present embodiment comprises the solar recharging loop with metal-oxide-semiconductor Q1, is provided with first order drive circuit 1 and second level drive circuit 2 at the control end of metal-oxide-semiconductor Q1; First order drive circuit 1 is made of microcontroller IC1, triode Q4～Q6, resistance R 2～R7 and switching diode D1, and second level drive circuit 2 is by Voltage stabilizing module U1, resistance R 1, driving triode Q2～Q3 and filter capacitor EC1; The output of microcontroller IC1 connects the input of second level drive circuit 2 successively by triode Q6, Q5, Q4, drive control end, its input that triode Q2, Q3 are connected in parallel, its output connects metal-oxide-semiconductor Q1 and connect first order drive circuit 1, the voltage input end of Voltage stabilizing module U1 connects the charging voltage in solar recharging loop, voltage output end connects metal-oxide-semiconductor Q1 by driving triode Q2～Q3 control end.
In the first order drive circuit 1, resistance R 7 is connected between the pin 11 and pin 20 of microcontroller IC1, resistance R 2 is connected between the B utmost point and the E utmost point of triode Q4, resistance R 4 is connected between the B utmost point and the E utmost point of triode Q5, the B utmost point of triode Q6 connects the pin 11 of microcontroller IC1 by resistance R 6 and common port, the C utmost point of resistance R 7 passes through the B utmost point of resistance R 5 connecting triode Q5 and the common port of resistance R 4, and the C utmost point of triode Q5 is successively by switching diode D1, the B utmost point of resistance R 3 connecting triode Q4 and the common port of resistance R 2; In the second level drive circuit 2, filter capacitor EC1 is connected between the pin 2 and pin 3 of Voltage stabilizing module U1, one end of resistance R 1 connects the C utmost point that drives triode Q2 is connected pin 3 and is connected the E utmost point that drives triode Q2 and the E utmost point that drives triode Q3 with common port, the other end of filter capacitor EC1 with Voltage stabilizing module U1, the G utmost point of described metal-oxide-semiconductor Q1 connects the E utmost point that drives triode Q2 and the E utmost point of driving triode Q3; Drive the E utmost point and the common port of resistance R 2, the C utmost point of described triode Q4 and the pin that the B utmost point is connected, the E utmost point is connected Voltage stabilizing module U1 2 of driving triode Q3 and the common port of filter capacitor EC1 of the C utmost point connecting triode Q4 of triode Q3.
In the present embodiment, described resistance R 1, R5 and R6 are current-limiting resistance, and resistance R 4 and R7 are pull-up resistor, and resistance R 2 and R3 are divider resistance.The E utmost point of the 20th pin of described microcontroller IC1 and the common port of resistance R 7, triode Q5 and the public termination 5V power supply of resistance R 4.The D utmost point ground connection of the pin 10 of described microcontroller IC1, the E utmost point of triode Q6, metal-oxide-semiconductor Q1.It is anodal that the pin 1 of described Voltage stabilizing module U1 connects solar cell.The pin 2 of described Voltage stabilizing module U1 is connected the solar cell negative pole with the E utmost point of the common port of filter capacitor EC1, triode Q4 with the common port of resistance R 2, the S utmost point of metal-oxide-semiconductor Q1.
The operation principle of the present embodiment:
The present embodiment utilizes the variation of current potential under the metal-oxide-semiconductor Q1 turn-on and turn-off state, realizes the PWM of second level drive circuit is driven control with first order drive circuit, makes metal-oxide-semiconductor Q1 enter normal operating conditions in the situation on the extremely floating ground of S of metal-oxide-semiconductor Q1 at the beginning; Enter operating state and have energy when electricity just automatically to charge the battery at solar charging circuit, cross at solar array voltage and stop charging when low.
With reference to Fig. 3, metal-oxide-semiconductor Q1 is in when turn-offing at the beginning, the current potential that the current potential that A is ordered and B are ordered equates, when the pin 11 of microcontroller IC1 is exported high level, triode Q6 conducting, electric current is from 5V power supply process resistance R 4, resistance R 5, triode Q6 is to ground, the B of triode Q5 has electric current extremely equally, so also conducting of triode Q5, electric current is from 5V power supply process switching diode D1 to the D point, and when turn-offing owing to metal-oxide-semiconductor Q1, the current potential that the current potential that A is ordered and B are ordered equates, add 5V so the voltage that the D point is ordered with respect to C just equals the A point voltage, this voltage is through divider resistance R2, obtain the E point voltage after the R3 dividing potential drop; When the relative C point voltage of E point voltage during greater than 0.7V, triode Q4 conducting, electric current flows to the solar cell negative pole from the pin 3 of Voltage stabilizing module U1 by resistance R 1, triode Q4, so triode Q3 conducting, the G utmost point of metal-oxide-semiconductor Q1 does not have voltage, and metal-oxide-semiconductor Q1 is turned off; When pin 11 output low level of microcontroller IC1, triode Q3, Q4, Q5, Q6 cut-off, triode Q2 conducting, the G pole tension of metal-oxide-semiconductor Q1 equals pin 3 voltages of Voltage stabilizing module, if this voltage is greater than the threshold voltage of metal-oxide-semiconductor conducting, metal-oxide-semiconductor Q1 is switched on so; When solar cell does not have voltage; the pin 3 of Voltage stabilizing module U1 does not have voltage too; even during pin 11 output low level of microcontroller IC1, the G utmost point of metal-oxide-semiconductor Q1 does not have voltage to come conducting metal-oxide-semiconductor Q1 yet, can play like this effect of protection solar cell.
The above; it only is the better specific embodiment of the utility model; but protection range of the present utility model is not limited to this; anyly be familiar with those skilled in the art in the scope that the utility model discloses; be equal to replacement or change according to the technical solution of the utility model and utility model design thereof, all belonged to protection range of the present utility model.
Claims (7)
1. the drive circuit of metal-oxide-semiconductor in the solar recharging loop comprises the solar recharging loop with metal-oxide-semiconductor Q1, it is characterized in that:
1) control end at metal-oxide-semiconductor Q1 is provided with first order drive circuit (1) and second level drive circuit (2); First order drive circuit (1) is made of microcontroller IC1, triode Q4～Q6, resistance R 2～R7 and switching diode D1, and second level drive circuit (2) is by Voltage stabilizing module U1, resistance R 1, driving triode Q2～Q3 and filter capacitor EC1; The output of microcontroller IC1 connects the input of second level drive circuit (2) successively by triode Q6, Q5, Q4, drive control end, its input that triode Q2, Q3 are connected in parallel, its output connects metal-oxide-semiconductor Q1 and connect first order drive circuit (1), the voltage input end of Voltage stabilizing module U1 connects the charging voltage in solar recharging loop, voltage output end connects metal-oxide-semiconductor Q1 by driving triode Q2～Q3 control end;
2) utilize the variation of current potential under the metal-oxide-semiconductor Q1 turn-on and turn-off state, realize the PWM of second level drive circuit is driven control with first order drive circuit, in the situation on the extremely floating ground of S of metal-oxide-semiconductor Q1 at the beginning, make metal-oxide-semiconductor Q1 enter normal operating conditions; Enter operating state and have energy when electricity just automatically to charge the battery at solar charging circuit, cross at solar array voltage and stop charging when low.
2. the drive circuit of metal-oxide-semiconductor in a kind of solar recharging according to claim 1 loop, it is characterized in that: in the first order drive circuit (1), resistance R 7 is connected between the pin 11 and pin 20 of microcontroller IC1, resistance R 2 is connected between the B utmost point and the E utmost point of triode Q4, resistance R 4 is connected between the B utmost point and the E utmost point of triode Q5, the B utmost point of triode Q6 connects the pin 11 of microcontroller IC1 and the common port of resistance R 7 by resistance R 6, the C utmost point is by the B utmost point of resistance R 5 connecting triode Q5 and the common port of resistance R 4, and the C utmost point of triode Q5 is successively by switching diode D1, the B utmost point of resistance R 3 connecting triode Q4 and the common port of resistance R 2; In the second level drive circuit (2), filter capacitor EC1 is connected between the pin 2 and pin 3 of Voltage stabilizing module U1, one end of resistance R 1 connects the C utmost point that drives triode Q2 is connected pin 3 and is connected the E utmost point that drives triode Q2 and the E utmost point that drives triode Q3 with common port, the other end of filter capacitor EC1 with Voltage stabilizing module U1, the G utmost point of described metal-oxide-semiconductor Q1 connects the E utmost point that drives triode Q2 and the E utmost point of driving triode Q3; Drive the E utmost point and the common port of resistance R 2, the C utmost point of described triode Q4 and the pin that the B utmost point is connected, the E utmost point is connected Voltage stabilizing module U1 2 of driving triode Q3 and the common port of filter capacitor EC1 of the C utmost point connecting triode Q4 of triode Q3.
3. the drive circuit of metal-oxide-semiconductor in a kind of solar recharging according to claim 1 and 2 loop, it is characterized in that: described resistance R 1, R5 and R6 consist of current-limiting resistance, and resistance R 4 and R7 consist of pull-up resistor, and resistance R 2 and R3 consist of divider resistance.
4. the drive circuit of metal-oxide-semiconductor in a kind of solar recharging according to claim 1 and 2 loop is characterized in that: the E utmost point of the 20th pin of described microcontroller IC1 and the common port of resistance R 7, triode Q5 and the public termination 5V power supply of resistance R 4.
5. the drive circuit of metal-oxide-semiconductor in a kind of solar recharging according to claim 1 and 2 loop is characterized in that: the D utmost point ground connection of the pin 10 of described microcontroller IC1, the E utmost point of triode Q6, metal-oxide-semiconductor Q1.
6. the drive circuit of metal-oxide-semiconductor in a kind of solar recharging according to claim 1 and 2 loop, it is characterized in that: it is anodal that the pin 1 of described Voltage stabilizing module U1 connects solar cell.
7. the drive circuit of metal-oxide-semiconductor in a kind of solar recharging according to claim 1 and 2 loop, it is characterized in that: the pin 2 of described Voltage stabilizing module U1 is connected the solar cell negative pole with the E utmost point of the common port of filter capacitor EC1, triode Q4 with the common port of resistance R 2, the S utmost point of metal-oxide-semiconductor Q1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220570107 CN202918013U (en) | 2012-11-01 | 2012-11-01 | Drive circuit of solar energy charging loop MOS tube |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220570107 CN202918013U (en) | 2012-11-01 | 2012-11-01 | Drive circuit of solar energy charging loop MOS tube |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202918013U true CN202918013U (en) | 2013-05-01 |
Family
ID=48166289
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220570107 Expired - Fee Related CN202918013U (en) | 2012-11-01 | 2012-11-01 | Drive circuit of solar energy charging loop MOS tube |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202918013U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113472029A (en) * | 2021-06-15 | 2021-10-01 | 深圳市云鼠科技开发有限公司 | Power tree circuit applied to control circuit board of sweeping robot |
-
2012
- 2012-11-01 CN CN 201220570107 patent/CN202918013U/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113472029A (en) * | 2021-06-15 | 2021-10-01 | 深圳市云鼠科技开发有限公司 | Power tree circuit applied to control circuit board of sweeping robot |
| CN113472029B (en) * | 2021-06-15 | 2024-02-06 | 深圳市云鼠科技开发有限公司 | Power tree circuit applied to control circuit board of sweeping robot |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201975986U (en) | Full-bridge drive circuit of square wave inverter | |
| CN103825436B (en) | A kind of power field effect tube drive circuit of high speed big current | |
| CN203278782U (en) | Drive and protection circuit of high-frequency low-power MOSFET | |
| CN103944361A (en) | Field effect transistor high-speed drive circuit high in power and resistant to interference | |
| CN203313043U (en) | Negative-voltage drive circuit of high-frequency MOSFET | |
| CN205051676U (en) | Half -bridge drive circuit | |
| CN202513892U (en) | High power MOS (Metal Oxide Semiconductor) field-effect transistor driving circuit | |
| CN201750125U (en) | Short circuit self-locking protection circuit | |
| CN201860094U (en) | Short circuit protection circuit for switch power | |
| CN203313051U (en) | Efficient release circuit structure | |
| CN203788258U (en) | Novel IGBT/MOSFET driving circuit | |
| CN203933358U (en) | A kind of field effect transistor drive circuit for high frequency low voltage system | |
| CN202918013U (en) | Drive circuit of solar energy charging loop MOS tube | |
| CN105322948B (en) | Half-bridge drive circuit | |
| CN204012687U (en) | There is the protective circuit of the pooling feature that powers on | |
| CN203840190U (en) | High-power anti-interference field effect transistor high-speed drive circuit | |
| CN103677050A (en) | Voltage-controlled constant flow source circuit | |
| CN102969704A (en) | Pre-charging circuit | |
| CN203554739U (en) | LED constant current drive circuit | |
| CN201403045Y (en) | MOS tube driver circuit | |
| CN202121561U (en) | Novel MOS transistor drive circuit for switching power supply | |
| CN205141990U (en) | Soft start power controller | |
| CN103247411B (en) | A kind of solenoid driver circuit | |
| CN203352441U (en) | High-side output drive circuit | |
| CN207166838U (en) | A kind of backlight constant current drive circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C56 | Change in the name or address of the patentee |
Owner name: GUANGDONG REAL-DESIGN INTELLIGENT TECHNOLOGY CO., Free format text: FORMER NAME: FOSHAN SHUNDE REALDESIGN ELECTRONICS INDUSTRY CO., LTD. |
|
| CP03 | Change of name, title or address |
Address after: 528300 Shunde, Guangdong, Daliang Industrial Park, Fengxiang, Xiang Xiang Road, No. 1 Patentee after: GUANGDONG REAL-DESIGN INTELLIGENT TECHNOLOGY CO., LTD. Address before: 528300 Guangdong province Foshan city Shunde District Daliang Industrial Park Fengxiang Huaye Road No. 1 Patentee before: Foshan Shunde Realdesign Electronics Industry Co., Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130501 Termination date: 20171101 |