CN202889288U - High-precision on-chip clock oscillator realized based on CMOS technology - Google Patents
High-precision on-chip clock oscillator realized based on CMOS technology Download PDFInfo
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- CN202889288U CN202889288U CN201220466239.4U CN201220466239U CN202889288U CN 202889288 U CN202889288 U CN 202889288U CN 201220466239 U CN201220466239 U CN 201220466239U CN 202889288 U CN202889288 U CN 202889288U
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Abstract
The utility model discloses a high-precision on-chip clock oscillator realized based on a CMOS technology. The high-precision on-chip clock oscillator comprises a frequency voltage switching circuit, an integral circuit, a voltage-controlled oscillator, a current automatic adjusting circuit, a temperature coefficient adjustable current source and a band-gap reference circuit. The frequency voltage switching circuit, the integral circuit, and the voltage-controlled oscillator are connected in sequence to form a closed loop structure. Using the frequency voltage switching circuit, the integral circuit, and the voltage-controlled oscillator, an oscillator circuit controlled by the closed loop is formed, thereby ensuring output frequency of the oscillator circuit to be controlled by the whole closed loop and not to be influenced by process deviation of a MOS tube. Since the closed loop is used, the oscillator circuit has good temperature and process stability, and meanwhile the oscillator circuit is simple and clock precision is high. An external quartz crystal oscillator can be replaced by the oscillator.
Description
Technical field
The utility model relates to electricity field, is specifically related to a kind of clock oscillation circuit, relates in particular to a kind of high accuracy on chip clock oscillator based on CMOS technique.
Background technology
In various electronic systems, crystal oscillator (XTAL) is a kind of requisite clock reference signal.Be widely used in computer, remote controller and the automatic control circuit.It mainly is used in the frequency generator in communication system, is the synchronism of data processing equipment clocking with the inhibit signal transmission.Although crystal oscillator can produce accurately clock signal, but the clock signal by the crystal oscillator generation, exist cost taken by themselves higher, system power dissipation is high, and can not be integrated into the shortcoming of chip internal, have no idea to realize the requirement of low cost, low-power consumption and the miniaturization of electronic system, particularly aspect biomedical chip and Internet of Things chip application.
Along with the development of integrated circuit, a lot of research papers are arranged both at home and abroad, all propose some and realized the shake method and structure of device of crystal with active circuit.For example adopt MEMS (micro electro mechanical system) on the sheet (MEMS) to realize crystal oscillator on the sheet, but MEMS realizes existing power consumption high, cost is high and can not with the shortcoming of standard CMOS process realization, limit its application and development.Although some oscillator structure can be obtained good frequency stability, need the external passive device, and the temperature of frequency and voltage coefficient not fine abroad.The application has proposed a kind of on-chip active oscillating circuit that adopts closed-loop structure just for the shortcoming of present active oscillator.
The utility model content
The purpose of this utility model is to overcome the above problem that prior art exists, and a kind of high accuracy on chip clock oscillator of realizing based on CMOS technique is provided, and this circuit has the oscillator of closed loop control, thereby has good temperature characterisitic and noiseproof feature.
For realizing above-mentioned technical purpose, reach above-mentioned technique effect, the utility model is achieved through the following technical solutions:
A kind of high accuracy on chip clock oscillator of realizing based on CMOS technique, comprise that frequency-voltage conversion circuit, integrating circuit, voltage controlled oscillator, electric current repair bar circuit, temperature coefficient adjustable current source and band-gap reference circuit automatically, described frequency-voltage conversion circuit, described integrating circuit and described voltage controlled oscillator are in turn connected to form a closed-loop structure; Described frequency-voltage conversion circuit connects described temperature coefficient adjustable current source, and described electric current automatically repaiies the bar circuit and described band-gap reference circuit connects respectively described temperature coefficient adjustable current source, and described band-gap reference circuit also connects described integrating circuit; Described frequency-voltage conversion circuit changes into voltage with frequency dependence with described voltage controlled oscillator output frequency; Described integrating circuit compares the input voltage that produces voltage controlled oscillator with the voltage of described band-gap reference circuit and the output voltage of described frequency-voltage conversion circuit; Described voltage controlled oscillator produces corresponding clock signal according to the control voltage swing; Described electric current is repaiied the bar circuit automatically in order to control the output size of described temperature coefficient adjustable current source; Described temperature coefficient adjustable current source provides electric current for described frequency-voltage conversion circuit; Described band-gap reference circuit provides and the irrelevant reference voltage of temperature for described temperature coefficient adjustable current source and described integrating circuit.
Further, described frequency-voltage conversion circuit is comprised of charge and discharge capacitance, sampling capacitance, the charging and discharging currents source links to each other with described charge and discharge capacitance by the 3rd control signal switch, described sampling capacitance links to each other with described the 3rd control signal switch by the second control signal switch, and described the 3rd control signal switch also is connected with the first control signal switch; Described charging and discharging currents source is produced by described temperature coefficient adjustable current source, and described the first control signal switch, described the second control signal switch and described the 3rd control signal switch are produced by logic control circuit by described voltage controlled oscillator; The frequency size of the size of described frequency-voltage conversion circuit Voltage-output and described the first control signal switch, described the second control signal switch, described the 3rd control signal switch is linear.
Further, described voltage controlled oscillator is comprised of voltage-current converter circuit and current control oscillator, and described voltage-current converter circuit is connected with described current control oscillator; The output signal one tunnel of described voltage controlled oscillator is as described clock oscillator circuit output frequency, and another road produces corresponding control signal and feeds back to described frequency-voltage conversion circuit.
Further, described temperature coefficient adjustable current source comprises the first channel field-effect pipe and the second channel field-effect pipe, the gate input of described the first channel field-effect pipe and described the second channel field-effect pipe connects respectively supply voltage and bandgap voltage reference, described the first channel field-effect pipe is operated in dark linear zone, feedback is provided for described the second channel field-effect pipe; The first bias current is given the second channel field-effect pipe by the first channel field-effect pipe mirror image, described the second channel field-effect pipe is repaiied the control signal that the bar circuit produces automatically by many groups field effect transistor and described electric current, control the size of current of the second bias current, described the second bias current is given described frequency-voltage conversion circuit by the current mirror mirror image, as the charging current of described charge and discharge capacitance.
The beneficial effects of the utility model are:
The utility model is by utilizing frequency-voltage conversion circuit, integrating circuit and voltage controlled oscillator, a kind of pierce circuit with closed loop control is provided, thereby has guaranteed that this oscillating circuit output frequency is subjected to whole closed loop control not to be subjected to the process deviation influence of metal-oxide-semiconductor.So simultaneously owing to adopt the closed loop oscillating circuit to have good noiseproof feature, and whole loop has adopted temperature compensated current source and electric current automatically to repair the bar circuit, guaranteed that this oscillating circuit has good temperature and technology stability, this pierce circuit is simple simultaneously, clock accuracy is high, the external quartz crystal oscillator of replaceable electronic system.
Above-mentioned explanation only is the general introduction of technical solutions of the utility model, for can clearer understanding technological means of the present utility model, and can be implemented according to the content of specification, below with preferred embodiment of the present utility model and cooperate accompanying drawing to be described in detail as follows.Embodiment of the present utility model is provided in detail by following examples and accompanying drawing thereof.
Description of drawings
Accompanying drawing described herein is used to provide further understanding of the present utility model, consists of the application's a part, and illustrative examples of the present utility model and explanation thereof are used for explaining the utility model, do not consist of improper restriction of the present utility model.In the accompanying drawings:
Fig. 1 is clock oscillation circuit general principles block diagram on the utility model high-precision sheet;
Fig. 2 is the utility model frequency-voltage conversion circuit theory diagram;
Fig. 3 is the utility model voltage-controlled oscillator circuit figure;
Fig. 4 is the utility model temperature coefficient adjustable current source circuit theory diagrams;
Fig. 5 is the utility model integrating circuit block diagram.
Number in the figure explanation: 1, frequency-voltage conversion circuit, 2, integrating circuit, 3, voltage controlled oscillator, 4, electric current is repaiied the bar circuit automatically, 5, the temperature coefficient adjustable current source, 6, band-gap reference circuit, A0-A7, first group of field effect transistor, B0-B7, second group of field effect transistor, C1, charge and discharge capacitance, C2, sampling capacitance, clkp1, described the first control signal switch, clkp2, the second control signal switch, clkn, the 3rd control signal switch, Ibias1, the first bias current, Ibias2, the second bias current, ICO, current control oscillator, Icp, the charging and discharging currents source, P0, the first P-channel field-effect transistor (PEFT) pipe, P1, the second P-channel field-effect transistor (PEFT) pipe, N0, the one N channel field-effect pipe, N1, the 2nd N channel field-effect pipe, TRD0-TRD7, first group of control signal, TRU0-TRU7, second group of control signal, VDD, supply voltage, Vbg, bandgap voltage reference.
Embodiment
Below with reference to the accompanying drawings and in conjunction with the embodiments, describe the utility model in detail.
With reference to shown in Figure 1, a kind of high accuracy on chip clock oscillator of realizing based on CMOS technique, comprise that frequency-voltage conversion circuit 1, integrating circuit 2, voltage controlled oscillator 3, electric current repair bar circuit 4, temperature coefficient adjustable current source 5 and band-gap reference circuit 6 automatically, described frequency-voltage conversion circuit 1, described integrating circuit 2 and described voltage controlled oscillator 3 are in turn connected to form a closed-loop structure; Described frequency-voltage conversion circuit 1 connects described temperature coefficient adjustable current source 5, and described electric current automatically repaiies bar circuit 4 and described band-gap reference circuit 6 connects respectively described temperature coefficient adjustable current source 5, and described band-gap reference circuit 6 also connects described integrating circuit 2; Described frequency-voltage conversion circuit 1 changes into voltage with frequency dependence with described voltage controlled oscillator 3 output frequencies; Described integrating circuit 2 compares the input voltage that produces voltage controlled oscillator 3 with the voltage of described band-gap reference circuit 6 and the output voltage of described frequency-voltage conversion circuit 1; Described voltage controlled oscillator 3 produces corresponding clock signal according to the control voltage swing; Described electric current is repaiied bar circuit 4 automatically in order to control the output size of described temperature coefficient adjustable current source 5; Described temperature coefficient adjustable current source 5 provides electric current for described frequency-voltage conversion circuit 1; Described band-gap reference circuit 6 provides and the irrelevant reference voltage of temperature for described temperature coefficient adjustable current source 5 and described integrating circuit 2.
With reference to shown in Figure 2, further, described frequency-voltage conversion circuit 1 is comprised of charge and discharge capacitance C1, sampling capacitance C2, charging and discharging currents source Icp links to each other with described charge and discharge capacitance C1 by the 3rd control signal switch clkn, described sampling capacitance C2 links to each other with described the 3rd control signal switch clkn by the second control signal switch clkp2, and described the 3rd control signal switch clkn also is connected with the first control signal switch clkp1; Described charging and discharging currents source Icp is produced by described temperature coefficient adjustable current source 5, and described the first control signal switch clkp1, described the second control signal switch clkp2 and described the 3rd control signal switch clkn are produced by logic control circuit by described voltage controlled oscillator 3; The frequency size of the size of described frequency-voltage conversion circuit 1 Voltage-output and described the first control signal switch clkp1, described the second control signal switch clkp2, described the 3rd control signal switch clkn is linear.
With reference to shown in Figure 3, further, described voltage controlled oscillator 3 is comprised of voltage-current converter circuit and current control oscillator ICO, and described voltage-current converter circuit is connected with described current control oscillator ICO; The output signal one tunnel of described voltage controlled oscillator 3 is as described clock oscillator circuit output frequency, and another road produces corresponding control signal and feeds back to described frequency-voltage conversion circuit 1.
With reference to shown in Figure 4, further, described temperature coefficient adjustable current source 5 comprises a N channel field-effect pipe N0 and the 2nd N channel field-effect pipe N1, the gate input of a described N channel field-effect pipe N0 and described the 2nd N channel field-effect pipe N1 meets respectively supply voltage VDD and bandgap voltage reference Vbg, a described N channel field-effect pipe N0 is operated in dark linear zone, feedback is provided for described the 2nd N channel field-effect pipe N1; Can adjust the temperature coefficient of the first bias current Ibias1 by the breadth length ratio of adjusting a described N channel field-effect pipe N0 and described the 2nd N channel field-effect pipe N1; Described the first bias current Ibias1 gives the second P-channel field-effect transistor (PEFT) pipe P1 by the first P-channel field-effect transistor (PEFT) pipe P0 mirror image, described the second P-channel field-effect transistor (PEFT) pipe P1 is by first group of field effect transistor A0-A7, second group of field effect transistor B0-B7, and described electric current is repaiied first group of control signal TRD0-TRD7, second group of control signal TRU0-TRU7 that bar circuit 4 produces automatically, control the size of current of the second bias current Ibias2, described the second bias current Ibias2 gives described frequency-voltage conversion circuit 1 by the current mirror mirror image, as the charging current of described charge and discharge capacitance C1.
With reference to shown in Figure 5, these integrating circuit 2 input signals are respectively the output signal of frequency-voltage conversion circuit 1 and band-gap reference circuit 6, amplify by the differential signal to input signal, the output signal of generation and input differential signal Amplitude correlation, the size of these output signal control voltage controlled oscillator 3 output frequencies.
The above is preferred embodiment of the present utility model only, is not limited to the utility model, and for a person skilled in the art, the utility model can have various modifications and variations.All within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.
Claims (4)
1. high accuracy on chip clock oscillator of realizing based on CMOS technique, it is characterized in that: comprise that frequency-voltage conversion circuit (1), integrating circuit (2), voltage controlled oscillator (3), electric current repair bar circuit (4), temperature coefficient adjustable current source (5) and band-gap reference circuit (6) automatically, described frequency-voltage conversion circuit (1), described integrating circuit (2) and described voltage controlled oscillator (3) are in turn connected to form a closed-loop structure; Described frequency-voltage conversion circuit (1) connects described temperature coefficient adjustable current source (5), described electric current automatically repaiies bar circuit (4) and described band-gap reference circuit (6) connects respectively described temperature coefficient adjustable current source (5), and described band-gap reference circuit (6) also connects described integrating circuit (2);
Described frequency-voltage conversion circuit (1) changes into voltage with frequency dependence with described voltage controlled oscillator (3) output frequency;
Described integrating circuit (2) compares the input voltage that produces voltage controlled oscillator (3) with the voltage of described band-gap reference circuit (6) and the output voltage of described frequency-voltage conversion circuit (1);
Described voltage controlled oscillator (3) produces corresponding clock signal according to the control voltage swing;
Described electric current is repaiied bar circuit (4) automatically in order to control the output size of described temperature coefficient adjustable current source (5);
Described temperature coefficient adjustable current source (5) provides electric current for described frequency-voltage conversion circuit (1);
Described band-gap reference circuit (6) provides and the irrelevant reference voltage of temperature for described temperature coefficient adjustable current source (5) and described integrating circuit (2).
2. the high accuracy on chip clock oscillator of realizing based on CMOS technique according to claim 1, it is characterized in that: described frequency-voltage conversion circuit (1) is by charge and discharge capacitance (C1), sampling capacitance (C2) forms, charging and discharging currents source (Icp) links to each other with described charge and discharge capacitance (C1) by the 3rd control signal switch (clkn), described sampling capacitance (C2) links to each other with described the 3rd control signal switch (clkn) by the second control signal switch (clkp2), and described the 3rd control signal switch (clkn) also is connected with the first control signal switch (clkp1); Described charging and discharging currents source (Icp) is produced by described temperature coefficient adjustable current source (5), and described the first control signal switch (clkp1), described the second control signal switch (clkp2) and described the 3rd control signal switch (clkn) are produced by logic control circuit by described voltage controlled oscillator (3); The frequency size of the size of described frequency-voltage conversion circuit (1) Voltage-output and described the first control signal switch (clkp1), described the second control signal switch (clkp2), described the 3rd control signal switch (clkn) is linear.
3. the high accuracy on chip clock oscillator of realizing based on CMOS technique according to claim 1, it is characterized in that: described voltage controlled oscillator (3) is comprised of voltage-current converter circuit and current control oscillator (ICO), and described voltage-current converter circuit is connected with described current control oscillator (ICO); The output signal one tunnel of described voltage controlled oscillator (3) is as described clock oscillator circuit output frequency, and another road produces corresponding control signal and feeds back to described frequency-voltage conversion circuit (1).
4. the high accuracy on chip clock oscillator of realizing based on CMOS technique according to claim 1 and 2, it is characterized in that: described temperature coefficient adjustable current source (5) comprises a N channel field-effect pipe (N0) and the 2nd N channel field-effect pipe (N1), the gate input of a described N channel field-effect pipe (N0) and described the 2nd N channel field-effect pipe (N1) connects respectively supply voltage (VDD) and bandgap voltage reference (Vbg), a described N channel field-effect pipe (N0) is operated in dark linear zone, feedback is provided for described the 2nd N channel field-effect pipe (N1);
The first bias current (Ibias1) is given the second P-channel field-effect transistor (PEFT) pipe (P1) by the first P-channel field-effect transistor (PEFT) pipe (P0) mirror image, described the second P-channel field-effect transistor (PEFT) pipe (P1) is repaiied the control signal that bar circuit (4) produces automatically by many groups field effect transistor and described electric current, control the size of current of the second bias current (Ibias2), described the second bias current (Ibias2) is given described frequency-voltage conversion circuit (1) by the current mirror mirror image, as the charging current of described charge and discharge capacitance (C1).
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| CN201220466239.4U CN202889288U (en) | 2012-09-14 | 2012-09-14 | High-precision on-chip clock oscillator realized based on CMOS technology |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882471A (en) * | 2012-09-14 | 2013-01-16 | 苏州锐控微电子有限公司 | Complementary metal oxide semiconductor (CMOS) process-based high-accuracy on-chip clock oscillator |
| CN104104386A (en) * | 2014-07-28 | 2014-10-15 | 三星半导体(中国)研究开发有限公司 | Frequency voltage switching circuit and oscillator |
| CN104320111A (en) * | 2014-09-25 | 2015-01-28 | 中国兵器工业集团第二一四研究所苏州研发中心 | Clock source automatic management circuit |
| CN105811966A (en) * | 2016-02-26 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | Frequency-to-voltage circuit |
| CN106788258A (en) * | 2015-12-22 | 2017-05-31 | 中国电子科技集团公司第二十研究所 | A kind of clock circuit of frequency stabilization |
| CN108241401A (en) * | 2016-12-23 | 2018-07-03 | 原相科技股份有限公司 | Voltage-current conversion circuit and voltage-controlled oscillator device |
| CN108562373A (en) * | 2018-04-24 | 2018-09-21 | 电子科技大学 | A kind of high-precision temperature sensor circuit |
| CN108572034A (en) * | 2018-04-24 | 2018-09-25 | 电子科技大学 | A kind of temperature sensor circuit of embedded clock |
| CN116094526A (en) * | 2022-12-31 | 2023-05-09 | 成都电科星拓科技有限公司 | Method and device for converting pulse frequency into voltage |
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2012
- 2012-09-14 CN CN201220466239.4U patent/CN202889288U/en not_active Expired - Lifetime
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102882471A (en) * | 2012-09-14 | 2013-01-16 | 苏州锐控微电子有限公司 | Complementary metal oxide semiconductor (CMOS) process-based high-accuracy on-chip clock oscillator |
| CN102882471B (en) * | 2012-09-14 | 2016-01-20 | 苏州锐控微电子有限公司 | Based on the high accuracy on chip clock oscillator that CMOS technology realizes |
| CN104104386B (en) * | 2014-07-28 | 2017-02-22 | 三星半导体(中国)研究开发有限公司 | Frequency voltage switching circuit and oscillator |
| CN104104386A (en) * | 2014-07-28 | 2014-10-15 | 三星半导体(中国)研究开发有限公司 | Frequency voltage switching circuit and oscillator |
| CN104320111B (en) * | 2014-09-25 | 2017-05-17 | 中国兵器工业集团第二一四研究所苏州研发中心 | Clock source automatic management circuit |
| CN104320111A (en) * | 2014-09-25 | 2015-01-28 | 中国兵器工业集团第二一四研究所苏州研发中心 | Clock source automatic management circuit |
| CN106788258A (en) * | 2015-12-22 | 2017-05-31 | 中国电子科技集团公司第二十研究所 | A kind of clock circuit of frequency stabilization |
| CN105811966A (en) * | 2016-02-26 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | Frequency-to-voltage circuit |
| CN105811966B (en) * | 2016-02-26 | 2019-06-04 | 上海华虹宏力半导体制造有限公司 | Frequency turns potential circuit |
| CN108241401A (en) * | 2016-12-23 | 2018-07-03 | 原相科技股份有限公司 | Voltage-current conversion circuit and voltage-controlled oscillator device |
| CN108562373A (en) * | 2018-04-24 | 2018-09-21 | 电子科技大学 | A kind of high-precision temperature sensor circuit |
| CN108572034A (en) * | 2018-04-24 | 2018-09-25 | 电子科技大学 | A kind of temperature sensor circuit of embedded clock |
| CN108572034B (en) * | 2018-04-24 | 2020-11-13 | 电子科技大学 | Temperature sensor circuit with built-in clock |
| CN116094526A (en) * | 2022-12-31 | 2023-05-09 | 成都电科星拓科技有限公司 | Method and device for converting pulse frequency into voltage |
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Granted publication date: 20130417 |