CN103095217A - Low phase noise voltage-controlled oscillator - Google Patents

Low phase noise voltage-controlled oscillator Download PDF

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Publication number
CN103095217A
CN103095217A CN2013100158754A CN201310015875A CN103095217A CN 103095217 A CN103095217 A CN 103095217A CN 2013100158754 A CN2013100158754 A CN 2013100158754A CN 201310015875 A CN201310015875 A CN 201310015875A CN 103095217 A CN103095217 A CN 103095217A
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inductance
differential
phase noise
controlled oscillator
resonant cavity
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CN2013100158754A
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CN103095217B (en
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樊祥宁
李斌
王加锋
施晓阳
王志功
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Southeast University
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Southeast University
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Abstract

The invention discloses a low phase noise voltage-controlled oscillator. The low phase noise voltage-controlled oscillator comprises a negative resistance circuit module, a difference coupling inductor capacitor resonant cavity and a source feedback inductor. The coupling inductance capacitor resonant cavity is used for improving an effective quality factor of the resonant cavity. Magnetic coupling between the source feedback inductor and the resonant cavity inductor is regarded as the feedback for increasing the amplitude of output signals of the resonant cavity, and the negative resistance circuit module adopts a current multiplexing structure to reduce power dissipation and remove deterioration of the phase noise by a second harmonic of a common mode node. The low phase noise voltage-controlled oscillator can effectively reduce phase noise.

Description

Low Phase Noise Voltage-controlled Oscillator
Technical field
The invention belongs to wireless radiofrequency receiver ic technical field, be specifically related to a kind of Low Phase Noise Voltage-controlled Oscillator.
Background technology
Voltage controlled oscillator be in communication system for generation of the module of local oscillation signal, its performance directly determines the performance of communication system.Phase noise affects the sensitivity of receiver and the adjacent channel of transmitter and disturbs as a main performance index of voltage controlled oscillator.Therefore the voltage controlled oscillator that designs a low phase noise is to aobvious particularly important of modern wireless communication systems.
The way of realization of voltage controlled oscillator mainly contains ring oscillator and voltage controlled oscillator.Ring oscillator mainly is used to produce clock signal on sheet because phase noise performance is relatively poor.And voltage controlled oscillator is because its good phase noise performance is widely used in wireless communication field.
According to D.B.Lesson phase noise model formula, the phase noise L of voltage controlled oscillator (Δ f) can be expressed as:
L ( Δf ) ∝ Fk B T Q 2 R P V p 2 ( f 0 Δf ) 2 - - - ( 1 )
Wherein Δ f is deviation frequency, f oBe frequency of oscillation, F is noise figure, and k is Boltzmann constant, and T is kelvin rating, and Q is the resonant cavity quality factor, V pBe internal oscillation signal amplitude, R pBe the resonant cavity equivalent parallel resistance.
From formula (1) as can be known, for optimizing phase noise performance, can be by the quality factor q that improves resonant cavity and the amplitude V that improves oscillator signal pRealize.Be far longer than the quality factor of on-chip inductor due to the quality factor of electric capacity on sheet, the quality factor of resonant cavity are mainly determined by on-chip inductor.Yet, the impact of the factors such as high loss of skin effect and substrate, the obtainable quality factor of on-chip inductor are limited.On the other hand, along with reducing of CMOS technology characteristics size, the corresponding reduction of supply voltage, the voltage controlled oscillator output signal amplitude also reduces thereupon, and this makes very difficult that the optimal design of low phase noise becomes.
Summary of the invention
The object of the present invention is to provide a kind of Low Phase Noise Voltage-controlled Oscillator, the technical scheme of taking is as follows:
A kind of Low Phase Noise Voltage-controlled Oscillator is characterized in that: comprise negative resistance circuit module, differential coupling inductance capacitance resonant cavity, wherein:
The negative resistance circuit module comprises PMOS pipe M p, NMOS manages M n, two source class feedback inductance L that inductance value equates s1And L s2Power vd D series connection source class feedback inductance L s1Rear connection PMOS pipe M pSource electrode, NMOS manages M nSource series source class feedback inductance L s2Rear ground connection, PMOS manages M pGrid connect NMOS pipe M nDrain electrode as output V p, NMOS manages M nGrid connect PMOS pipe M pDrain electrode as output V n
The differential coupling inductance capacitance resonant cavity comprises differential inductance L dWith differential inductance L cAnd two variable capacitance C vDifferential inductance L dBy inductance L d1With inductance L d2Be composed in series, and inductance L d1With inductance L d2Inductance value equate, inductance L d1With inductance L d2An end that does not link together respectively with negative resistance circuit module output V pWith output V nConnect; Differential inductance L cBy inductance L c1With inductance L c2Be composed in series, and inductance L c1With inductance L c2Inductance value equate, inductance L c1With inductance L c2Butt end and dc offset voltage V bBe connected; Two variable capacitance C vDocking back-to-back, butt end and analog tuner voltage V CtrlBe connected, two variable capacitance C vAn end that does not link together respectively with inductance L c1With inductance L c2An end that does not link together connects.
Said differential inductance L d, differential inductance L c, source class feedback inductance L s1With source class feedback inductance L s2All be formed on substrate differential inductance L dAnd L cAll adopt symmetric difference structure and inductance L cBe formed at inductance L dUnder, source class feedback inductance L s1With L s2Be symmetrically formed in differential inductance L dAround, inductance L d1With inductance L c1, inductance L d2With inductance L c2Between coupling coefficient be 0.94, inductance L d1With inductance L s1, inductance L d2With inductance L s2Between coupling coefficient be 0.38, inductance L c1With inductance L s1, inductance L c2With inductance L s2Between coupling coefficient be 0.37.
Advantage of the present invention and beneficial effect: compared with prior art, Low Phase Noise Voltage-controlled Oscillator provided by the present invention adopts coupling inductance capacitor resonance chamber to improve the effective quality factor of resonant cavity.Utilize magnetic coupling between source class feedback inductance and resonant cavity inductance as feedback, improve effective grid of metal-oxide-semiconductor in the negative resistance element circuit-source overdrive voltage and increase the amplitude of resonant cavity output signal.The negative resistance element circuit adopts the current multiplexing structure, removes the common-mode node in traditional negative resistance element circuit, thereby eliminates the second harmonic of common-mode node in traditional structure to the deterioration of phase noise.Therefore, the present invention can effectively improve the phase noise performance of voltage controlled oscillator.
Description of drawings
Fig. 1 is the Low Phase Noise Voltage-controlled Oscillator structural representation of the embodiment of the present invention;
Fig. 2 is traditional difference complementary structure voltage-controlled oscillator circuit schematic diagram;
Fig. 3 is the inductance L of the embodiment of the present invention d, L c, L s1And L s2The oblique view of arrangement;
Fig. 4 is Low Phase Noise Voltage-controlled Oscillator of the present invention and adopts voltage controlled oscillator shown in Figure 2 phase noise curve comparison schematic diagram under same output frequency.
Embodiment
For the technological means that further illustrates advantage of the present invention place and specifically take, describe specific embodiments of the invention in detail below in conjunction with each accompanying drawing.Understand these embodiment and only be used for explanation the present invention and be not used in and limit the scope of the invention, after having read the present invention, those skilled in the art all should fall within the application's claim protection range to the modification of the various equivalent form of values of the present invention.
With reference to Fig. 1, Low Phase Noise Voltage-controlled Oscillator of the present invention comprises negative resistance circuit module, differential coupling inductance capacitance resonant cavity, wherein:
The negative resistance circuit module comprises PMOS pipe M p, NMOS manages M n, power vd D series connection source class feedback inductance L s1Rear connection PMOS pipe M pSource electrode, NMOS manages M nSource series source class feedback inductance L s2Rear ground connection, source class feedback inductance L s1With source class feedback inductance L s2Inductance value equate, PMOS manages M pGrid connect NMOS pipe M nDrain electrode as output V p, NMOS manages M nGrid connect PMOS pipe M pDrain electrode as output V n
The differential coupling inductance capacitance resonant cavity comprises differential inductance L d, differential inductance L cAnd two variable capacitance C vWherein:
Differential inductance L dBy inductance L d1With inductance L d2Be composed in series, and inductance L d1With inductance L d2Inductance value equate, inductance L d1With inductance L d2An end that does not link together respectively with output V pWith output V nConnect.
Differential inductance L cBy inductance L c1With inductance L c2Be composed in series, and inductance L c1With inductance L c2Inductance value equate, inductance L c1With inductance L c2Butt end and dc offset voltage V bBe connected.
Two variable capacitance C vDocking back-to-back, butt end and analog tuner voltage V CtrlBe connected, two variable capacitance C vAn end that does not link together respectively with inductance L c1With inductance L c2An end that does not link together connects.
Differential inductance L cBe formed at differential inductance L dUnder; Source class feedback inductance L s1With source class feedback inductance L s2Be symmetrically formed in differential inductance L dAround.
The definition of the Q value of cavity is essentially energy that resonant cavity stores and the ratio between the loss of resonator, is to improve the Q value of cavity, and the present invention adopts two differential inductance L dWith L cWith two variable capacitance C vConsist of the differential coupling inductance capacitance resonant cavity, and inductance L dWith inductance L cHas coupling coefficient k dcFor the single inductance capacitance resonant cavity that adopts in traditional voltage controlled oscillator structure shown in Figure 2, the existence of coupling inductance coupling effect, make coupling inductance capacitor resonance chamber have more magnetic field energy at the resonance frequency place, corresponding have higher Q value, thereby promote phase noise performance.
In one embodiment of the invention, adopt two variable capacitance C vAs the analog tuner part.L cCentre cap meets dc offset voltage V bIn order to give two variable capacitance C vProvide suitable direct current biasing, by regulating analog tuner voltage V CtrlThereby change the capacitance that is linked into resonant cavity, realize the fine tuning of frequency.The differential vibrating signal is from output V pWith output V nOutput.
In the present invention, the negative resistance circuit module adopts the current multiplexing structure.Adopt a NMOS pipe M nWith a PMOS pipe M pCross-couplings provides negative resistance, replenishes the energy loss of resonant cavity.To pipe (Fig. 2), this structure only needs the bias current of half just can provide identical negative resistance with respect to traditional complementary chiasma coupled differential.In addition, due to PMOS pipe and NMOS pipe conducting simultaneously or shutoff when voltage controlled oscillator is worked, do not have the common source node in traditional structure, this makes its impact that can be avoided the second harmonic frequency in the common source node that phase noise is brought.
The present invention introduces the source feedback inductance L s1With L s2Utilize the source feedback inductance L s1, L s2With inductance L in resonant cavity d, L cMagnetic coupling as feedback, make NMOS pipe M nWith PMOS pipe M pDrain voltage and source voltage change in the same way, make output V pWith output V nOutput amplitude is not clamped down on by supply voltage VDD and earth potential, can obtain higher oscillator signal amplitude under equal bias condition.
The given Low Phase Noise Voltage-controlled Oscillator of the present invention uses a plurality of inductance, and these inductance need very large chip area.Fig. 3 shows an example of the present invention, is formed at the inductance L on substrate d, L c, L s1And L s2Oblique view.Inductance L dAnd inductance L cAll adopt symmetric difference structure and inductance L cBe formed at inductance L dUnder, in order to reuse same chip area, inductance L dAnd inductance L cInductance value be 1.0nH.Inductance L s1With inductance L s2Be symmetrically formed in inductance L dThe periphery, inductance L s1With inductance L s2Inductance value be 0.2nH.Inductance L d1With inductance L c1, inductance L d2With inductance L c2Between coupling coefficient k dcBe about 0.94.Inductance L d1With inductance L s1, inductance L d2With inductance L s2Between coupling coefficient k dsBe about 0.38, inductance L c1With inductance L s1, inductance L c2With inductance L s2Between coupling coefficient k csBe about 0.37.
Figure 4 shows that Low Phase Noise Voltage-controlled Oscillator of the present invention and adopt voltage controlled oscillator shown in Figure 2 phase noise curve comparison schematic diagram under same output frequency.Adopt TSMC0.18-μ m CMOS technique, resonance frequency is 12GHz, adopt structure of the present invention, all under identical condition, phase noise performance has obtained great lifting, at 1MHz frequency deviation place at power consumption and output frequency, phase noise reduces approximately 8.8dB, at 100kHz frequency deviation place, phase noise reduces approximately 13.2dB, and this explanation structure of the present invention can effectively promote phase noise performance.

Claims (2)

1. Low Phase Noise Voltage-controlled Oscillator is characterized in that: comprise negative resistance circuit module, differential coupling inductance capacitance resonant cavity, wherein:
The negative resistance circuit module comprises PMOS pipe M p, NMOS manages M n, two source class feedback inductance L that inductance value equates s1And L s2Power vd D series connection source class feedback inductance L s1Rear connection PMOS pipe M pSource electrode, NMOS manages M nSource series source class feedback inductance L s2Rear ground connection, PMOS manages M pGrid connect NMOS pipe M nDrain electrode as output V p, NMOS manages M nGrid connect PMOS pipe M pDrain electrode as output V n
The differential coupling inductance capacitance resonant cavity comprises differential inductance L dWith differential inductance L cAnd two variable capacitance C vDifferential inductance L dBy inductance L d1With inductance L d2Be composed in series, and inductance L d1With inductance L d2Inductance value equate, inductance L d1With inductance L d2An end that does not link together respectively with negative resistance circuit module output V pWith output V nConnect; Differential inductance L cBy inductance L c1With inductance L c2Be composed in series, and inductance L c1With inductance L c2Inductance value equate, inductance L c1With inductance L c2Butt end and dc offset voltage V bBe connected; Two variable capacitance C vDocking back-to-back, butt end and analog tuner voltage V CtrlBe connected, two variable capacitance C vAn end that does not link together respectively with inductance L c1With inductance L c2An end that does not link together connects.
2. Low Phase Noise Voltage-controlled Oscillator according to claim 1, is characterized in that: differential inductance L d, differential inductance L c, source class feedback inductance L s1With source class feedback inductance L s2All be formed on substrate differential inductance L dAnd L cAll adopt symmetric difference structure and inductance L cBe formed at inductance L dUnder, source class feedback inductance L s1With L s2Be symmetrically formed in differential inductance L dAround, inductance L d1With inductance L c1, inductance L d2With inductance L c2Between coupling coefficient be 0.94, inductance L d1With inductance L s1, inductance L d2With inductance L s2Between coupling coefficient be 0.38, inductance L c1With inductance L s1, inductance L c2With inductance L s2Between coupling coefficient be 0.37.
CN201310015875.4A 2013-01-16 2013-01-16 Low Phase Noise Voltage-controlled Oscillator Expired - Fee Related CN103095217B (en)

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CN105577119A (en) * 2014-10-29 2016-05-11 联发科技（新加坡）私人有限公司 Cross-coupled oscillator, integrated circuit and electronic device
CN105611193A (en) * 2014-11-13 2016-05-25 三星电子株式会社 Depth sensing method, 3D image generation method, 3D image sensor, and apparatus including the same
CN105720973A (en) * 2016-01-15 2016-06-29 东南大学 Microwave monolithic integrated voltage-controlled oscillator tuning gain linearization method
WO2017011936A1 (en) * 2015-07-17 2017-01-26 无锡中星微电子有限公司 Integrated circuit with low common mode coupling effect
CN106411264A (en) * 2016-10-31 2017-02-15 深圳市华讯方舟微电子科技有限公司 Millimeter wave fundamental frequency oscillation circuit and millimeter wave oscillator
CN107896516A (en) * 2016-08-02 2018-04-10 华为技术有限公司 Voltage Waveform Shaping Oscillator
CN108777565A (en) * 2018-06-04 2018-11-09 成都仕芯半导体有限公司 The voltage controlled oscillator of inductive coupling resonator and its composition
CN111277222A (en) * 2020-02-17 2020-06-12 电子科技大学 Current multiplexing voltage-controlled oscillator based on grid-source transformer feedback
CN111404487A (en) * 2020-04-02 2020-07-10 电子科技大学 Harmonic current multiplexing millimeter wave voltage-controlled oscillator
CN112003569A (en) * 2020-09-07 2020-11-27 华南理工大学 High-stability ultra-wideband tuning voltage-controlled oscillator based on three-inductance coupling
CN113014200A (en) * 2015-01-27 2021-06-22 华为技术有限公司 Radio frequency oscillator
CN115549587A (en) * 2022-09-02 2022-12-30 电子科技大学 Low-temperature voltage-controlled oscillator circuit with low flicker noise, chip and quantum measurement and control system
CN116614089A (en) * 2023-07-21 2023-08-18 浙江大学 Low-phase-noise multi-core voltage-controlled oscillator layout structure and oscillator structure
CN117240220A (en) * 2023-11-13 2023-12-15 成都明夷电子科技有限公司 Radio frequency voltage controlled oscillator and electronic equipment

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Cited By (26)

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CN105577119B (en) * 2014-10-29 2018-11-13 联发科技（新加坡）私人有限公司 Cross coupled oscillator arrangement, integrated circuit and electronic equipment
CN105577119A (en) * 2014-10-29 2016-05-11 联发科技（新加坡）私人有限公司 Cross-coupled oscillator, integrated circuit and electronic device
CN105611193A (en) * 2014-11-13 2016-05-25 三星电子株式会社 Depth sensing method, 3D image generation method, 3D image sensor, and apparatus including the same
CN113014200A (en) * 2015-01-27 2021-06-22 华为技术有限公司 Radio frequency oscillator
US11770101B2 (en) 2015-01-27 2023-09-26 Huawei Technologies Co., Ltd. Radio frequency oscillator
CN113014200B (en) * 2015-01-27 2023-12-15 华为技术有限公司 Radio frequency oscillator
CN108028248A (en) * 2015-07-17 2018-05-11 无锡中感微电子股份有限公司 The integrated circuit of low common mode coupling effect
WO2017011936A1 (en) * 2015-07-17 2017-01-26 无锡中星微电子有限公司 Integrated circuit with low common mode coupling effect
CN108028248B (en) * 2015-07-17 2020-12-25 无锡中感微电子股份有限公司 Integrated circuit with low common mode coupling effect
CN105720973B (en) * 2016-01-15 2018-05-08 东南大学 A kind of method of microwave monolithic Integrated VCO tuning gain linearisation
CN105720973A (en) * 2016-01-15 2016-06-29 东南大学 Microwave monolithic integrated voltage-controlled oscillator tuning gain linearization method
CN107896516A (en) * 2016-08-02 2018-04-10 华为技术有限公司 Voltage Waveform Shaping Oscillator
CN106411264B (en) * 2016-10-31 2018-09-14 深圳市华讯方舟微电子科技有限公司 A kind of millimeter wave base frequency oscillation circuit and millimetre-wave generator
WO2018076933A1 (en) * 2016-10-31 2018-05-03 深圳市华讯方舟微电子科技有限公司 Millimeter wave fundamental-frequency oscillating circuit and millimeter wave oscillator
CN106411264A (en) * 2016-10-31 2017-02-15 深圳市华讯方舟微电子科技有限公司 Millimeter wave fundamental frequency oscillation circuit and millimeter wave oscillator
CN108777565B (en) * 2018-06-04 2022-08-09 成都仕芯半导体有限公司 Inductive coupling resonator and voltage-controlled oscillator formed by same
CN108777565A (en) * 2018-06-04 2018-11-09 成都仕芯半导体有限公司 The voltage controlled oscillator of inductive coupling resonator and its composition
CN111277222A (en) * 2020-02-17 2020-06-12 电子科技大学 Current multiplexing voltage-controlled oscillator based on grid-source transformer feedback
CN111277222B (en) * 2020-02-17 2023-04-25 电子科技大学 Current multiplexing voltage-controlled oscillator based on feedback of gate-source transformer
CN111404487A (en) * 2020-04-02 2020-07-10 电子科技大学 Harmonic current multiplexing millimeter wave voltage-controlled oscillator
CN112003569A (en) * 2020-09-07 2020-11-27 华南理工大学 High-stability ultra-wideband tuning voltage-controlled oscillator based on three-inductance coupling
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CN116614089A (en) * 2023-07-21 2023-08-18 浙江大学 Low-phase-noise multi-core voltage-controlled oscillator layout structure and oscillator structure
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CN117240220A (en) * 2023-11-13 2023-12-15 成都明夷电子科技有限公司 Radio frequency voltage controlled oscillator and electronic equipment

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