CN108964613A - A kind of active mixer - Google Patents
A kind of active mixer Download PDFInfo
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- CN108964613A CN108964613A CN201810715340.0A CN201810715340A CN108964613A CN 108964613 A CN108964613 A CN 108964613A CN 201810715340 A CN201810715340 A CN 201810715340A CN 108964613 A CN108964613 A CN 108964613A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1458—Double balanced arrangements, i.e. where both input signals are differential
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Abstract
The invention discloses a kind of active mixers, belong to frequency mixer technical field.The frequency mixer includes transconductance stage, switching stage and load stage three parts；The radio-frequency differential voltage signal of input, to circuit, is converted into current signal using third rank mutual conductance coefficient correcting current mirror by transconductance stage；Switching stage metal-oxide-semiconductor is logical in the control lower whorl conductance of the big signal of local oscillator；Current signal after load stage resistance converts switching stage is converted into voltage signal；The frequency mixer uses follow-on dynamic current injection technique, reduces the flicker noise of frequency mixer；Compared with the prior art, the configuration of the present invention is simple, conversion gain are high, the linearity is good, noise is low, interport isolation is good.
Description
Technical field
The invention belongs to field of radio frequency integrated circuits, are related to a kind of active mixer, specially high-conversion-gain, High Linear
Degree, low noise, high-isolation frequency mixer.
Background technique
With the high speed development of wireless communication, Wifi, bluetooth are widely used in the working in life of people, wirelessly communicate
Rapid development so that people are continuously increased communication equipment demand, and more stringent requirements are proposed to its performance.Radio frequency connects
Receipts machine is the important module of wireless communication, its performance indicator affects entire wireless communication system, so RF IC
Design must develop towards miniaturization, low cost, low-power consumption, high-performance, high integration direction.Frequency mixer is radio-frequency transmitter
Nucleus module, it realize radio frequency to intermediate frequency conversion.Active mixer to local oscillation power require it is lower, and can provide compared with
High gain reduces the noise requirements of frequency mixer late-class circuit.Therefore, it in the design of frequency mixer, needs to conversion gain, make an uproar
The performance indicators such as sound, the linearity, power consumption, isolation are comprehensively considered.
Summary of the invention
The object of the present invention is to provide a kind of active mixer circuit, the technical problem to be solved is that: in low-power consumption
On the basis of improve frequency mixer performance be restricted.
The technical scheme to solve the above technical problems is that a kind of active mixer circuit, including transconductance stage, open
Close grade and load stage.Transconductance stage module uses third rank mutual conductance coefficient correcting current mirror technology, noise cancellation technique and source degeneracy
Induction structure is connect with external input device, accesses radio frequency voltage signal, converts radio-frequency current letter for radio frequency voltage signal
Number；Switching stage accesses local oscillation signal, logical in the control lower whorl conductance of the big signal of local oscillator using metal-oxide-semiconductor, switches over tune to electric current
System, to realize the conversion of frequency；The load stage RC circuit is responsible for the current intermediate frequency signal after frequency conversion to be converted into output voltage
Signal.
The beneficial effects of the present invention are: transconductance stage is made of third rank mutual conductance coefficient correcting current mirror technology (M1-M10),
So that the conversion gain and the linearity of frequency mixer are improved.Source degeneracy induction structure is used simultaneously, and inductance L4, L5 are provided
Preferable input matching properties, also improve the linearity of circuit.For the noise for reducing input stage, noise is used in transconductance stage
Technology for eliminating.Circuit inductance L1 in parallel at the common source node of two switching stages, for eliminating parasitic capacitance to noise
With the influence of the linearity.In order to improve the conversion gain of frequency mixer, circuit is used using follow-on dynamic current injection technique
To reduce flicker noise.
Based on the above technical solution, the present invention can also be improved as follows.
Further, transconductance stage includes NMOS tube M1, NMOS tube M2, NMOS tube M3, NMOS tube M4, NMOS tube M9, NMOS tube
M10, PMOS tube M5, NMOS tube M6, NMOS tube M7, NMOS tube M8, inductance L1, inductance L2, inductance L3, inductance L4 and inductance L5.
Wherein the positive terminal RF+ connection of one end of inductance L2 and radio frequency voltage signal, the other end are connect with the grid of NMOS tube M1；NMOS
The source level of pipe M1 is connect with the source level of NMOS tube M2, and drain electrode is connect with the drain electrode of NMOS tube M9；The grid of NMOS tube M9 and drain electrode
Connection, source level are connect with the grid of NMOS tube M1；The grid of NMOS tube M2 is connect with the grid of NMOS tube M1, source level and NMOS tube
The source level of M1 connects, and drain electrode is connect with the drain electrode of PMOS tube M6；One end of inductance L4 is connect with the source level of NMOS tube M1, the other end
Ground connection；The drain electrode of PMOS tube M5 is connect with the drain electrode of NMOS tube M1, and grid is connect with the grid of PMOS tube M6, source level and biased electrical
Press V0 connection；The grid and drain electrode connection, source level of PMOS tube M6 is connect with bias voltage V0；
One end of inductance L3 and the negative pole end RF- connection of radio frequency voltage signal, the other end are connect with the grid of NMOS tube M3；
The source level of NMOS tube M3 is connect with the source level of NMOS tube M4, and drain electrode is connect with the drain electrode of NMOS tube M10；The grid of NMOS tube M10
It is connected with drain electrode, source level is connect with the grid of NMOS tube M3；The grid of NMOS tube M4 is connect with the grid of NMOS tube M3, source level with
The source level of NMOS tube M3 connects, and drain electrode is connect with the drain electrode of PMOS tube M7；One end of inductance L5 is connect with the source level of NMOS tube M3,
Other end ground connection；The drain electrode of PMOS tube M8 is connect with the drain electrode of NMOS tube M3, and grid is connect with the grid of PMOS tube M7, source level with
Bias voltage V0 connection；The grid and drain electrode connection, source level of PMOS tube M7 is connect with bias voltage V0；One end of inductance L1 with
The drain electrode of NMOS tube M1 connects, the drain electrode connection of the other end NMOS tube M3 of inductance L1；
Further scheme the utility model has the advantages that transconductance stage uses NMOS tube M1, M2, current mirror M5, M6 constitute third rank
Mutual conductance coefficient correcting current mirror is to circuit.The current signal of output is injected into switching stage and carries out frequency conversion.By in frequency mixer
The source level series passive device of transconductance stage metal-oxide-semiconductor M1, M3 constitute serial Feedback the linearity of frequency mixer can be improved.Some
Someone uses resistance, capacitor, inductance as feedback device in document, to improve the linearity of frequency mixer.But when according to resistance,
It can cause additional Resistance Thermal Noise, so that the noiseproof feature of frequency mixer reduces.According to capacitor or inductance as negative-feedback
Will not then noiseproof feature be made to reduce.But need to increase additional DC channel when using capacitor as feedback device, so using
The present invention is using inductance L4, L5 as feedback device.L2-L5 forms preferable impedance matching circuit, also improves circuit
The linearity.In order to eliminate the influence of parasitic capacitance, connected an inductance L1 between transconductance stage and switching stage, so that frequency mixer
The linearity be improved.For the noise for reducing input stage, input is constituted using NMOS tube M9, M10 in transconductance stage and is made an uproar
Sound eliminates circuit.
Further, switching stage includes NMOS tube M11, NMOS tube M12, NMOS tube M13, NMOS tube M14.Wherein NMOS tube
The positive terminal LO+ connection of the grid and local oscillation signal of M11, source level are connect with the drain electrode of NMOS tube M1, drain electrode and load stage electricity
Hinder one end connection of R1；The negative pole end LO- connection of the grid and local oscillation signal of NMOS tube M12, the source of source level and NMOS tube M11
Pole connection, drain electrode are connect with the drain electrode of NMOS tube M14；The negative pole end LO- connection of the grid and local oscillation signal of NMOS tube M13,
Source level is connect with the drain electrode of NMOS tube M3, and drain electrode is connect with the drain electrode of NMOS tube M11；The grid and local oscillation signal of NMOS tube M14
Negative pole end LO+ connection, source level connect with the drain electrode of NMOS tube M3, and drain electrode is connect with one end of load stage resistance R1；
Further scheme the utility model has the advantages that switching stage accesses local oscillation signal, using metal-oxide-semiconductor under the control of the big signal of local oscillator
It is connected in turn, modulation is switched over to electric current, to realize the conversion of frequency；
Further, load stage includes resistance R1, resistance R2, capacitor C1 and capacitor C2.Wherein one end of R1 and NMOS tube M11
Drain electrode connection, the other end connect with supply voltage VDD；One end of capacitor C1 is connect with the drain electrode of NMOS tube M11, the other end with
Supply voltage VDD connection；One end of R2 is connect with the drain electrode of NMOS tube M14, and the other end is connect with supply voltage VDD；Capacitor C2
One end connect with the drain electrode of NMOS tube M14, the other end is connect with supply voltage VDD.
Further scheme the utility model has the advantages that when inputting difference mode signal, capacitor C1, C2 impedance value is AC earth, can be with
Load needed for conversion gain is provided.
Further, modified current injection includes PMOS tube M15, PMOS tube M16, PMOS tube M17.Wherein PMOS tube
The grid of M15 is connect with DC offset voltage V1, and source electrode is connect with supply voltage VDD, and drain electrode and the source electrode of PMOS tube M16 connect
It connects；The grid of PMOS tube M16 is connect with the drain electrode of PMOS tube M17, and drain electrode is connect with the drain electrode of NMOS tube M1；PMOS tube M17's
Grid is connect with the drain electrode of PMOS tube M16, and drain electrode is connect with the drain electrode of NMOS tube M3, and source level is connect with the source electrode of PMOS tube M16；
Further scheme the utility model has the advantages that simultaneously turned on or the moment of switch motion in two switching tubes, electricity can be generated
Flow pulse.When switching the conducting of centering a pair of metal-oxide-semiconductor, the cut-off of another pair metal-oxide-semiconductor flows through the electric current of metal-oxide-semiconductor by the electricity of mutual conductance pipe
Stream determines, does not contribute noise.It is therefore possible to use a kind of dynamic current injection, when switch to NMOS tube simultaneously
When conducting, the voltage at switching stage common source node reaches minimum, PMOS tube M16, M17 conducting, by switch to the electricity of common source node
Stream is taken away, and when the NMOS tube for switching centering does not simultaneously turn on, the voltage at common source node is very high, and PMOS tube M16, M17 is cut
Only, electric current is not taken away.This scheme can significantly reduce the amplitude of noise current pulse, to reduce 1/f noise, also not
It can cause additional thermal noise as quiescent current injection, due to only having switching moments to extract electric current, will not draw substantially
Enter thermal noise.
Detailed description of the invention
Fig. 1 is circuit diagram in the present invention；
Fig. 2 is the analogous diagram that conversion gain changes with local oscillation power in the present invention；
Fig. 3 is the analogous diagram that conversion gain changes with output frequency in the present invention；
Fig. 4 is noise coefficient simulation result diagram of the present invention；
Fig. 5 is linearity simulation result diagram of the present invention；
In attached drawing, parts list represented by the reference numerals are as follows:
1, transconductance stage, 2, switching stage, 3, load stage, 4, current injection circuit.
Specific embodiment
The principle and features of the present invention will be described below with reference to the accompanying drawings, and the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the invention.
A kind of active mixer circuit, including transconductance stage, switching stage and load stage.Transconductance stage module uses the mutual conductance of third rank
Coefficient correcting current mirror technology, noise cancellation technique and source degeneracy induction structure, connect with external input device, access radio frequency electrical
Signal is pressed, converts current radio frequency signal for radio frequency voltage signal；Switching stage accesses local oscillation signal, big in local oscillator using metal-oxide-semiconductor
The control lower whorl conductance of signal is logical, modulation is switched over to electric current, to realize the conversion of frequency；The load stage RC circuit is responsible for
Current intermediate frequency signal after frequency conversion is converted into output voltage signal.
Optionally, as an embodiment of the present invention: transconductance stage include NMOS tube M1, NMOS tube M2, NMOS tube M3,
NMOS tube M4, NMOS tube M9, NMOS tube M10, PMOS tube M5, NMOS tube M6, NMOS tube M7, NMOS tube M8, inductance L1, inductance
L2, inductance L3, inductance L4 and inductance L5.The wherein positive terminal RF+ connection of one end of inductance L2 and radio frequency voltage signal, the other end
It is connect with the grid of NMOS tube M1；The source level of NMOS tube M1 is connect with the source level of NMOS tube M2, the drain electrode of drain electrode and NMOS tube M9
Connection；The grid and drain electrode connection, source level of NMOS tube M9 is connect with the grid of NMOS tube M1；The grid and NMOS tube of NMOS tube M2
The grid of M1 connects, and source level is connect with the source level of NMOS tube M1, and drain electrode is connect with the drain electrode of PMOS tube M6；One end of inductance L4 with
The source level of NMOS tube M1 connects, other end ground connection；The drain electrode of PMOS tube M5 is connect with the drain electrode of NMOS tube M1, grid and PMOS tube
The grid of M6 connects, and source level is connect with bias voltage V0；The grid of PMOS tube M6 and drain electrode connection, source level and bias voltage V0 connect
It connects；
One end of inductance L3 and the negative pole end RF- connection of radio frequency voltage signal, the other end are connect with the grid of NMOS tube M3；
The source level of NMOS tube M3 is connect with the source level of NMOS tube M4, and drain electrode is connect with the drain electrode of NMOS tube M10；The grid of NMOS tube M10
It is connected with drain electrode, source level is connect with the grid of NMOS tube M3；The grid of NMOS tube M4 is connect with the grid of NMOS tube M3, source level with
The source level of NMOS tube M3 connects, and drain electrode is connect with the drain electrode of PMOS tube M7；One end of inductance L5 is connect with the source level of NMOS tube M3,
Other end ground connection；The drain electrode of PMOS tube M8 is connect with the drain electrode of NMOS tube M3, and grid is connect with the grid of PMOS tube M7, source level with
Bias voltage V0 connection；The grid and drain electrode connection, source level of PMOS tube M7 is connect with bias voltage V0；One end of inductance L1 with
The drain electrode of NMOS tube M1 connects, the drain electrode connection of the other end NMOS tube M3 of inductance L1；
In above-described embodiment, fully differential transconductance stage is using third rank mutual conductance coefficient correcting current mirror to circuit, metal-oxide-semiconductor work
In different regions, mutual conductance is all different.When adjust auxiliary MOS transistor bias voltage make its work in sub-threshold region, can make
The third rank mutual conductance coefficient of its third rank mutual conductance coefficient and main amplifier tube is cancelled out each other, and the linearity of circuit is improved with this.It is logical
It crosses the source level series inductance in transconductance stage metal-oxide-semiconductor M1, M3 of frequency mixer and constitutes serial Feedback and improve the linearity of frequency mixer.
L2-L5 forms preferable impedance matching circuit, also improves the linearity of circuit.In order to eliminate the influence of parasitic capacitance,
Connected an inductance L1 between transconductance stage and switching stage, so that the linearity of frequency mixer is improved.To reduce input stage
Noise, transconductance stage use NMOS tube M9, M10 constitute input noise eliminate circuit, make NMOS tube M9, M10 work exist
Deep linear zone, can be equivalent at resistance, any between metal-oxide-semiconductor both ends to be equivalent to current source for noise elimination structure
Noise can be eliminated by the structure.But flicker noise caused by metal-oxide-semiconductor itself cannot but completely eliminate, and can only eliminate to inflow
Part, and flow out part and then cannot.Nonetheless, this structure is still in terms of obtaining low noise with very big excellent
Gesture.
Optionally, as an embodiment of the present invention: switching stage includes NMOS tube M11, NMOS tube M12, NMOS tube
M13, NMOS tube M14.The wherein positive terminal LO+ connection of the grid of NMOS tube M11 and local oscillation signal, source level and NMOS tube M1's
Drain electrode connection, drain electrode are connect with one end of load stage resistance R1；The grid of NMOS tube M12 and the negative pole end LO- of local oscillation signal connect
It connects, source level is connect with the source electrode of NMOS tube M11, and drain electrode is connect with the drain electrode of NMOS tube M14；The grid and sheet of NMOS tube M13
The negative pole end LO- connection of vibration signal, source level are connect with the drain electrode of NMOS tube M3, and drain electrode is connect with the drain electrode of NMOS tube M11；
The negative pole end LO+ connection of the grid and local oscillation signal of NMOS tube M14, source level are connect with the drain electrode of NMOS tube M3, are drained and negative
Carry one end connection of grade resistance R1.
In examples detailed above, switching stage accesses local oscillation signal, logical in the control lower whorl conductance of the big signal of local oscillator using metal-oxide-semiconductor,
Modulation is switched over to electric current, to realize the conversion of frequency.
Optionally, load stage includes resistance R1, resistance R2, capacitor C1 and capacitor C2 as an embodiment of the present invention.
Wherein one end of R1 is connect with the drain electrode of NMOS tube M11, and the other end of R1 is connect with supply voltage VDD；One end of capacitor C1 with
The drain electrode of NMOS tube M11 connects, and the other end of capacitor C1 is connect with supply voltage VDD；One end of R2 and the drain electrode of NMOS tube M14
Connection, the other end of R2 are connect with supply voltage VDD；One end of capacitor C2 is connect with the drain electrode of NMOS tube M14, and capacitor C2's is another
One end is connect with supply voltage VDD.
In examples detailed above, when inputting difference mode signal, capacitor C1, C2 impedance value is AC earth, can provide conversion and increase
The required load of benefit.
Optionally, as an embodiment of the present invention: modified current injection includes PMOS tube M15, PMOS tube
M16, PMOS tube M17.Wherein the grid of PMOS tube M15 is connect with DC offset voltage V1, and source electrode is connect with supply voltage VDD,
Drain electrode is connect with the source electrode of PMOS tube M16；The grid of PMOS tube M16 is connect with the drain electrode of PMOS tube M17, drain electrode and NMOS tube M1
Drain electrode connection；The grid of PMOS tube M17 is connect with the drain electrode of PMOS tube M16, and drain electrode is connect with the drain electrode of NMOS tube M3, source level
It is connect with the source electrode of PMOS tube M16.
In examples detailed above, dynamic current injection technique is used, is simultaneously turned on or switch motion in two switching tubes
Moment can generate current impulse.When switching the conducting of centering a pair of metal-oxide-semiconductor, the electric current of metal-oxide-semiconductor is flowed through in the cut-off of another pair metal-oxide-semiconductor
It is determined by the electric current of mutual conductance pipe, noise is not contributed.It is therefore possible to use a kind of dynamic current injection, works as switch
When simultaneously turning on to NMOS tube, the voltage at switching stage common source node reaches minimum, the conducting of PMOS tube M16, M17, by switch pair
The electric current of common source node is taken away, and when the NMOS tube for switching centering does not simultaneously turn on, the voltage at common source node is very high, PMOS
Pipe M16, M17 cut-off, do not take electric current away.This scheme can significantly reduce the amplitude of noise current pulse, to reduce
1/f noise will not cause additional thermal noise as injecting quiescent current, due to only having switching moments to extract electric current, because
This will not introduce thermal noise substantially.We make it that resonance occur with parasitic capacitance by the way that reasonable inductance L1 value is arranged.Work as resonance
Frequency resonance is in ωRFWhen, the conversion gain of frequency mixer is improved.When resonant frequency point is selected in 2 ωRFWhen, parasitic capacitance
Impedance is reduced to original 1/3, makes second harmonic caused by parasitic capacitance is non-linear to be reduced to minimum.It can be with from above analysis
Find out, when resonance point is in different frequencies, the linearity or gain performance can reach good optimization in specific frequency.This reality
In example, by selecting suitable inductance L1 so that together total parasitic capacitance resonance frequency at source node between radio frequency fundamental wave and
Between radio frequency second harmonic, conversion gain, noise, the linearity performance parameter of frequency mixer can be improved.
The present invention uses TSMC 0.18um CMOS technology parameter, just emulates in Cadence Spectre to circuit,
The dimensional parameters of circuit are as shown in table 1.
The dimensional parameters of 1 circuit of table
| Device | Parameter | Device | Parameter | Device | Parameter |
| M1、M3 | 40u/0.18u | M11、M12 | 120u/0.18u | C1、C2 | 500p |
| M2、M4 | 80u/0.18u | M13、M14 | 120u/0.18u | L1 | 5n |
| M5、M8 | 27u/0.4u | M15 | 60u/0.4 | L2、L3 | 3n |
| M6、M7 | 3u/0.4u | M16、M17 | 8u/0.4u | L4、L5 | 2n |
| M9、M10 | 256u/0.4u | R1、R2 | 167 |
Active mixer of the invention is compared with the frequency mixer performance delivered in recent years, as shown in table 2.
The active mixer of the invention of table 2
The bibliography of comparison is respectively as follows:
[1]Wei K C,Ramiah H,Vitee N.A 0.12-,2.4-GHz CMOS Inductorless High
Isolation Subharmonic Mixer With Effective Current-Reuse Transconductance[J]
.IEEE Transactions on Microwave Theory&Techniques,2015,63(8):2427-2437.
[2] Jiang Mei, Zhang Xing, Wang Xinan wait a high-performance double flat weighing apparatus with active load for working in 2.4GHz frequency range of
Active mixer [J] Peking University journal: natural science edition, 2012,48 (4): 538-544.
[3]Yoon J,Kim H,Park C,et al.A New RF CMOS Gilbert Mixer With
Improved Noise Figure and Linearity[J].IEEE Transactions on Microwave Theory&
Techniques,2008,56(3):626-631.
As the above analysis, circuit structure of the present invention is simple, conversion gain is high, the linearity is good, noise is low, port isolation
Degree is high.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (5)
1. a kind of mixer, it is characterised in that: including transconductance stage, switching stage and the load stage being sequentially connected electrically, it is described across
It leads grade and circuit and source degeneracy induction structure, transconductance stage and external input device is connected using third rank mutual conductance coefficient correcting current mirror
It connects, accesses radio-frequency voltage, convert radio-frequency current for radio-frequency voltage；
The switching stage accesses local oscillation signal, logical in the control lower whorl conductance of the big signal of local oscillator using metal-oxide-semiconductor, cuts to electric current
Modulation is changed, to realize the conversion of frequency；
The load stage resistance is responsible for the current intermediate frequency signal after frequency conversion to be converted into output voltage signal.
2. frequency mixer according to claim 1, it is characterised in that: the transconductance stage include NMOS tube M1, NMOS tube M2,
NMOS tube M3, NMOS tube M4, NMOS tube M9, NMOS tube M10, PMOS tube M5, NMOS tube M6, NMOS tube M7, NMOS tube M8, inductance
L1, inductance L2, inductance L3, inductance L4 and inductance L5；One end of the inductance L2 and the positive terminal RF+ of radio frequency voltage signal connect
It connects, the other end is connect with the grid of NMOS tube M1；The source level of NMOS tube M1 is connect with the source level of NMOS tube M2, drain electrode and NMOS tube
The drain electrode of M9 connects；The grid and drain electrode connection, source level of NMOS tube M9 is connect with the grid of NMOS tube M1；The grid of NMOS tube M2
It is connect with the grid of NMOS tube M1, source level is connect with the source level of NMOS tube M1, and drain electrode is connect with the drain electrode of PMOS tube M6；Inductance L4
One end connect with the source level of NMOS tube M1, the other end ground connection；The drain electrode of PMOS tube M5 is connect with the drain electrode of NMOS tube M1, grid
It is connect with the grid of PMOS tube M6, source level is connect with bias voltage V0；The grid of PMOS tube M6 and drain electrode connection, source level and biasing
Voltage V0 connection；
One end of inductance L3 and the negative pole end RF- connection of radio frequency voltage signal, the other end are connect with the grid of NMOS tube M3；NMOS
The source level of pipe M3 is connect with the source level of NMOS tube M4, and drain electrode is connect with the drain electrode of NMOS tube M10；The grid of NMOS tube M10 and leakage
Pole connection, source level are connect with the grid of NMOS tube M3；The grid of NMOS tube M4 is connect with the grid of NMOS tube M3, source level and NMOS
The source level of pipe M3 connects, and drain electrode is connect with the drain electrode of PMOS tube M7；One end of inductance L5 is connect with the source level of NMOS tube M3, another
End ground connection；The drain electrode of PMOS tube M8 is connect with the drain electrode of NMOS tube M3, and grid is connect with the grid of PMOS tube M7, source level and biasing
Voltage V0 connection；The grid and drain electrode connection, source level of PMOS tube M7 is connect with bias voltage V0；One end of inductance L1 and NMOS tube
The drain electrode of M1 connects, the drain electrode connection of the other end NMOS tube M3 of inductance L1.
3. frequency mixer according to claim 2, it is characterised in that: the switching stage include NMOS tube M11, NMOS tube M12,
NMOS tube M13, NMOS tube M14；The positive terminal LO+ connection of the grid and local oscillation signal of the NMOS tube M11, source level and NMOS
The drain electrode of pipe M1 connects, and drain electrode is connect with one end of load stage resistance R1；The grid of NMOS tube M12 and the negative pole end of local oscillation signal
LO- connection, source level are connect with the source electrode of NMOS tube M11, and drain electrode is connect with the drain electrode of NMOS tube M14；The grid of NMOS tube M13
It is connect with the negative pole end LO- of local oscillation signal, source level is connect with the drain electrode of NMOS tube M3, and drain electrode and the drain electrode of NMOS tube M11 connect
It connects；The negative pole end LO+ connection of the grid and local oscillation signal of NMOS tube M14, source level are connect with the drain electrode of NMOS tube M3, drain electrode with
One end of load stage resistance R2 connects.
4. frequency mixer according to claim 3, it is characterised in that: the load stage includes resistance R1, resistance R2, capacitor C1
With capacitor C2；One end of the resistance R1 is connect with the drain electrode of NMOS tube M11, and the other end of R1 is connect with supply voltage VDD；Electricity
The one end for holding C1 is connect with the drain electrode of NMOS tube M11, and the other end is connect with supply voltage VDD；One end of the resistance R2 with
The drain electrode of NMOS tube M14 connects, and the other end of R2 is connect with supply voltage VDD；One end of capacitor C2 and the drain electrode of NMOS tube M14
Connection, the other end are connect with supply voltage VDD.
5. frequency mixer according to claim 4, it is characterised in that: the modified current injection includes PMOS tube
M15, PMOS tube M16, PMOS tube M17；The grid of the PMOS tube M15 is connect with DC offset voltage V1, source electrode and power supply electricity
VDD connection is pressed, drain electrode is connect with the source electrode of PMOS tube M16；The grid of PMOS tube M16 is connect with the drain electrode of PMOS tube M17, drain electrode
It is connect with the drain electrode of NMOS tube M1；The grid of PMOS tube M17 is connect with the drain electrode of PMOS tube M16, the leakage of drain electrode and NMOS tube M3
Pole connection, source level are connect with the source electrode of PMOS tube M16.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810715340.0A CN108964613A (en) | 2018-06-29 | 2018-06-29 | A kind of active mixer |
| DE212018000151.0U DE212018000151U1 (en) | 2018-06-29 | 2018-08-23 | mixer circuit |
| PCT/CN2018/101970 WO2020000616A1 (en) | 2018-06-29 | 2018-08-23 | Active mixer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810715340.0A CN108964613A (en) | 2018-06-29 | 2018-06-29 | A kind of active mixer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108964613A true CN108964613A (en) | 2018-12-07 |
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Cited By (6)
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| CN109905339A (en) * | 2019-02-28 | 2019-06-18 | 闫巧琴 | Informative library signal compensation circuit |
| CN110492850A (en) * | 2019-08-26 | 2019-11-22 | 许昌富奥星智能科技有限公司 | A kind of frequency mixer integrated circuit of high-gain, low noise |
| CN110535441A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of high-isolation broadband millimeter-wave frequency mixer applied to 5G communication |
| WO2020172893A1 (en) * | 2019-02-28 | 2020-09-03 | 华为技术有限公司 | Frequency mixer and communication device |
| CN112054770A (en) * | 2020-09-04 | 2020-12-08 | 中筑科技股份有限公司 | Mixer circuit applied to remote control system and radio frequency tag circuit |
| CN116827271A (en) * | 2023-08-31 | 2023-09-29 | 成都通量科技有限公司 | Self-adaptive bias transconductance stage active down-mixer based on current injection |
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| CN109905339A (en) * | 2019-02-28 | 2019-06-18 | 闫巧琴 | Informative library signal compensation circuit |
| WO2020172893A1 (en) * | 2019-02-28 | 2020-09-03 | 华为技术有限公司 | Frequency mixer and communication device |
| CN109905339B (en) * | 2019-02-28 | 2021-07-09 | 闫巧琴 | Signal compensation circuit for information library |
| CN113273086A (en) * | 2019-02-28 | 2021-08-17 | 华为技术有限公司 | Mixer and communication equipment |
| CN110492850A (en) * | 2019-08-26 | 2019-11-22 | 许昌富奥星智能科技有限公司 | A kind of frequency mixer integrated circuit of high-gain, low noise |
| CN110535441A (en) * | 2019-09-06 | 2019-12-03 | 电子科技大学 | A kind of high-isolation broadband millimeter-wave frequency mixer applied to 5G communication |
| CN112054770A (en) * | 2020-09-04 | 2020-12-08 | 中筑科技股份有限公司 | Mixer circuit applied to remote control system and radio frequency tag circuit |
| CN116827271A (en) * | 2023-08-31 | 2023-09-29 | 成都通量科技有限公司 | Self-adaptive bias transconductance stage active down-mixer based on current injection |
| CN116827271B (en) * | 2023-08-31 | 2023-11-07 | 成都通量科技有限公司 | Self-adaptive bias transconductance stage active down-mixer based on current injection |
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| WO2020000616A1 (en) | 2020-01-02 |
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