CN110061697A - Mm wave voltage controlled oscillator under low supply voltage, with broad tuning range - Google Patents
Mm wave voltage controlled oscillator under low supply voltage, with broad tuning range Download PDFInfo
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1228—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more field effect transistors
Abstract
The invention discloses the mm wave voltage controlled oscillators under a kind of low supply voltage, with broad tuning range, the voltage controlled oscillator is by negative resistance unit, tail current source, main vibration circuit, auxiliary circuit, output buffer stage circuit, wherein, negative resistance unit provides energy for resonant cavity to maintain to vibrate, and tail current source provides direct current biasing for negative resistance unit；Main vibration circuit is LC voltage controlled oscillator, realizes oscillation and carries out fine adjustments to frequency；Auxiliary circuit is made of switching capacity, realizes the coarse adjustment of frequency, and output buffer stage circuit uses common source level structure, and realization voltage controlled oscillator is isolated with late-class circuit.The present invention is based on 40nm CMOS technology devise it is a it is novel, work in mm wave voltage controlled oscillator under low supply voltage, with broad tuning range, low-power consumption, and realize good noiseproof feature.
Description
Technical field
The present invention relates to millimetre-wave generator field more particularly to it is a kind of it is based on CMOS technology, using switching capacity battle array
The LC voltage controlled oscillator of the broad tuning range of column.
Background technique
With the arrival in 5G epoch, wireless communication technique is rapidly developed, and demand of the system to bandwidth sharply increases, millimeter wave
The considerable frequency spectrum resource of frequency range (30G -300GHz) also seems more attractive.Radio-frequency system is as wireless communication system
Indispensable a part in system is just developing rapidly its research towards millimeter wave or even Terahertz frequency range.Millimeter-wave frequency
For synthesizer as the Key Circuit module in Millimeter-wave Wireless Communication System, main effect is in receive-transmit system to useful letter
Number carry out Up/Down Conversion.The noiseproof feature of millimeter-wave frequency synthesizer largely can generate interference to channel, influence letter
Number coding and decoding.Therefore there is very important research significance for the research of millimeter-wave frequency synthesizer.
Important composition module one of of the mm wave voltage controlled oscillator as millimeter-wave frequency synthesizer, performance is in certain journey
The performance of entire millimeter-wave frequency synthesizer is affected on degree.Voltage controlled oscillator (VCO) is that DC power supply energy is converted to friendship
Flow the circuit of signal energy.It can generate the oscillator signal of self―sustaining in the case where no external input, therefore, wide
General applies in frequency synthesizer, provides local oscillation signal for various radio receiving-transmitting units.It is voltage-controlled in various frequency synthesizers
Oscillator provides actual output signal, and performance directly determines most of performance parameter of frequency synthesizer.For example, voltage-controlled
The frequency tuning range of oscillator directly determines reference frequency output.In addition, the phase noise of voltage controlled oscillator determine it is comprehensive
The integrated circuit noise of clutch.The power consumption of voltage controlled oscillator accounts for the overwhelming majority of entire frequency synthesizer Power budgets.Therefore, right
The research of mm wave voltage controlled oscillator design has very important significance.
In recent years, being always both at home and abroad a hot spot about the research of voltage controlled oscillator, various novel structure sheafs go out
Not poor, the measured result that different technique obtains also is not quite similar.For example, on December 19th, 2017, Li Zheng great et al. application
A kind of low phase noise, wide frequency domain CMOS Integrated VCO (application number 201711371966.6), circuit include: main vibration electricity
Road and auxiliary circuit, the active load that main vibration circuit is made of LC passive network, at least one MOS and NMOS, auxiliary circuit by
LC filter circuit and capacitance tuning array composition.But this kind of structure is unable to satisfy all metal-oxide-semiconductors all at low supply voltages
Work in the saturated condition, is only suitable for the circuit compared with high power supply voltage, and tunable capacitor only controls operating at voltages in a tuning,
Voltage power supply section not can guarantee, the different capacitance maximum constant interval for surely obtaining tunable capacitor.On 2 1st, 2018, Xu Mei
Journey et al. proposes a kind of varistructure voltage controlled oscillator (application number 201820180361.2), changes pressure by cmos switch
The circuit structure for controlling oscillator, can reduce performance suitably both to meet power consumption index, and can also properly increase power consumption to meet
Performance indicator.But the circuit structure is not suitable for low power supply electricity still using NMOS and PMOS cross-coupling complementary structure
The application of volt circuit.Congruent people was built recklessly and has applied for a kind of low phase noise broad tuning bandwidth voltage controlled oscillator on March 16th, 2018
Circuit (application number 201820361519.6), negative resistance circuit are cascade cross coupling structure, and the signal of negative resistance circuit exports
Between the common source transistors and total gate transistor of cascode structure, output is kept apart with LC resonance circuit in this way, is avoided
Influence of the load to tuning bandwidth.But there are many inductance quoted in the circuit structure, will increase chip area, are unfavorable for dropping
Low cost reduces power consumption.
Researcher has carried out numerous studies in terms of the circuit structure of cmos vco, in noise, tuning range
It is traded off in terms of centre frequency.Although many structures all obtain the optimization of certain performance in some aspects, it
Optimization be all to be completed under the premise of sacrificing a certain item index, be difficult to realize the Multiple Optimization of multiple indexs.Therefore, if
Counting a low noise, broad tuning range, mm wave voltage controlled oscillator low in energy consumption has particularly important meaning.
Summary of the invention
In order to overcome above-mentioned difficulties, the present invention is based on 40nmCMOS technological design it is a it is novel, work in low power supply
Mm wave voltage controlled oscillator under voltage, with broad tuning range, low-power consumption, and good noiseproof feature is realized, it is detailed in
It is described below:
Under a kind of low supply voltage, the mm wave voltage controlled oscillator with broad tuning range, the voltage controlled oscillator is by bearing
Unit, tail current source, main vibration circuit, auxiliary circuit, output buffer stage circuit are hindered,
Wherein, negative resistance unit for resonant cavity provides energy to maintain to vibrate, and it is inclined that tail current source for negative resistance unit provides direct current
It sets；Main vibration circuit is LC voltage controlled oscillator, realizes oscillation and carries out fine adjustments to frequency；
Auxiliary circuit is made of switching capacity, realizes the coarse adjustment of frequency, output buffer stage circuit uses common source level structure, real
Existing voltage controlled oscillator is isolated with late-class circuit.
Further, the negative resistance unit uses NMOS type voltage controlled oscillator, reduces parasitic capacitance and PMOS cross-coupling
The additional noise that pipe introduces.
Preferably, the tail current source uses NMOS tube MnIt realizes, guarantees voltage controlled oscillator work in current limited area
With the edge of voltage restricted area.
Wherein, the main vibration circuit uses LC oscillator structure, comprising: an inductance L and two groups of tunable capacitors,
By choosing inductance inductance value and capacitor's capacity, frequency of oscillation is controlled.
Preferably, under the control of two groups of bias voltages, make the maximum curve control of the capacitance curvilinear motion rate of tunable capacitor
System controls the frequency variation of voltage controlled oscillator, makes high frequency and low frequency in each band limits in the range of controlling voltage
Part has frequency overlapping with connected frequency range.
The auxiliary circuit uses Kind of Switched Capacitor Array, and extended frequency range controls three by three groups of voltages respectively
The conducting and disconnection of group capacitor, every three metal-oxide-semiconductors constitute one group of switch.
Preferably, the output buffer stage circuit uses common source level structure.
The minimum and maximum frequency of oscillation of the voltage controlled oscillator are as follows:
Wherein, L is tap inductor；Cvmin~CvmaxFor the capacitance constant interval of tunable capacitor；CpFor parasitic capacitance；C1、C3、
C5It is capacitor.
The beneficial effect of the technical scheme provided by the present invention is that:
1, negative resistance unit uses NMOS type voltage controlled oscillator, and this structure has bigger phase margin, 40nm technique
Ceiling voltage is no more than 1V, and NMOS type is compared to being more suitable for low supply voltage circuit for previous cross-coupling complementary structure
Using.Unlike complementary type, NMOS type structure can exchange the performance of phase noise for by sacrificing power consumption, export direct current
It is flat directly to be determined by supply voltage, reduce the phase that the DC offset voltage at current source noise modulated variable capacitance both ends introduces
Noise penalty.
2, tail current source uses a NMOS tube, guarantees voltage controlled oscillator work in voltage restricted area and current limited area
Overlapping part provides direct current biasing, and obtains good phase noise.
3, main vibration circuit uses inductance and capacitance type structure, and inductance uses a tap inductor L, is obtained by adjusting inductance parameters
Suitable inductance value is obtained, circuit layout area is saved, reduces power consumption and ghost effect, two groups of tunable capacitors work are in different biass
Vb1、Vb2Under control, to obtain the maximum constant interval of capacitor, frequency-tuning range is improved.
4, auxiliary circuit uses switched capacitor array, capacitor C1、C2、C3、C4、C5、C6Using three groups of different capacitances, pass through
Three groups of control words s1, s2, s3 are controlled, eight frequency sub-band to overlap each other are obtained, to obtain a large range of frequency.Separately
Outside, using the higher metal-oxide-semiconductor of Q value as switch, the capacitor of different capacitances corresponds to the metal-oxide-semiconductor breadth length ratio of different capacitances, optimizes phase
Position noise.
Detailed description of the invention
Fig. 1 gives the circuit diagram of voltage controlled oscillator designed by the present invention；
The simulation result diagram of starting of oscillation when Fig. 2 gives Transient；
Fig. 3 gives the simulation result diagram of Transient sine wave；
Fig. 4 gives the simulation result diagram of phase noise Pnoise；
Fig. 5 gives the simulation result diagram of DC power；
Fig. 6 gives the simulation result diagram of voltage controlled oscillator tuning range.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, embodiment of the present invention is made below further
Ground detailed description.
Embodiment 1
The embodiment of the invention provides the mm wave voltage controlled oscillator under a kind of low supply voltage, with broad tuning range,
The voltage controlled oscillator is made of negative resistance unit, tail current source, main vibration circuit, auxiliary circuit, output buffer stage circuit.
Wherein, to provide endlessly energy in resonant cavity, to maintain to vibrate, tail current source is negative resistance list to negative resistance unit
Member provides direct current biasing, and main vibration circuit is LC voltage controlled oscillator, realizes oscillation and carries out fine adjustments, auxiliary to frequency
Electric routing switch capacitor is constituted, and realizes the coarse adjustment of frequency, and output buffer stage uses common source level structure, realizes voltage controlled oscillator with after
The isolation of grade circuit module.
1, negative resistance unit uses NMOS type voltage controlled oscillator, uses NMOS type and pmos type cross-coupling pipe complementary with previous
Unlike structure, this structure has lacked a pair of of PMOS tube, there is bigger phase margin, and tail current source can have more times
Work is more suitable for the circuit application of low supply voltage in saturation region, while reducing parasitic capacitance and PMOS cross-coupling pipe draws
The additional noise entered.Negative resistance unit is by NMOS tube M in the design1、M2It realizes, provides external energy for resonant cavity to maintain to vibrate.
2, tail current source uses a NMOS tube MnIt realizes, provides direct current biasing for negative resistance unit, guarantee voltage controlled oscillation
Device works at the edge in current limited area and voltage restricted area, enables the circuitry to normal starting of oscillation, and obtain good phase noise.
3, main vibration circuit uses LC oscillator structure, comprising: an inductance L and two groups of tunable capacitor Cv1、Cv2、
Cv3、Cv4, by choosing suitable inductance inductance value and capacitor's capacity, control frequency of oscillation.This structure is characterized in that inductance uses
One tap inductor L, rather than two inductance in previous structure, not only save chip area, but also can reduce power consumption.Separately
Outside, the characteristic changed according to tunable capacitor capacitance with the variation of control voltage, in two groups of bias voltage Vb1、Vb2Control under,
It controls the capacitance curvilinear motion rate maximum curve of tunable capacitor in the range of vctrl, accurately fine controls voltage controlled oscillation
The frequency of device changes, its high frequency in each band limits is made to have enough frequency weights with low frequency part with the frequency range being connected
It is folded.
4, auxiliary circuit uses Kind of Switched Capacitor Array, extended frequency range.Divided by three groups of voltages s1, s2, s3
The conducting and disconnection of three groups of capacitors are not controlled, and every three metal-oxide-semiconductors constitute one group of switch, such as M3、M4、M5, by giving control voltage s1
The voltage of 0V and 0.9V is accessed, realizes capacitor C1、C2Control.
5, output buffer stage circuit is as preferably using common source level structure, comprising: resistance R1And R2, metal-oxide-semiconductor M12And M13, electricity
Hold C7、C8, voltage controlled oscillator core electrocardio road and subsequent circuit are kept apart, resistance R1、R2Realize output impedance matching.
In conclusion the embodiment of the present invention based on 40nm CMOS technology devise it is a it is novel, work in low power supply electricity
Mm wave voltage controlled oscillator depress, with broad tuning range, low-power consumption, and realize good noiseproof feature.
Embodiment 2
Below with reference to specific attached drawing, calculation formula, the scheme in embodiment 1 is further introduced, is detailed in down
Text description:
Fig. 1 is the circuit theory for the mm wave voltage controlled oscillator based on 40nm CMOS technology that the embodiment of the present invention proposes
Figure.The voltage controlled oscillator is made of negative resistance unit, tail current source, main vibration circuit, auxiliary circuit and output buffer stage circuit.
Wherein, negative resistance unit uses NMOS type voltage controlled oscillator structure, and tail current source uses a NMOS tube Mn, main vibration electricity
Road uses inductance and capacitance type structure, and auxiliary circuit uses switched capacitor array, and output buffer stage uses common-source stage circuit.Using this
The voltage controlled oscillator of inventive embodiments design, can obtain low phase noise, low-power consumption, the millimetric wave voltage-controlled vibration of broad tuning range
Swing device.
Wherein, the specific connection type of integrated circuit is as follows:
Negative resistance unit metal-oxide-semiconductor M1、M2Grid drain electrode interconnect, i.e. M1Grid and M2Drain electrode be connected, M2Grid
With M1Drain electrode be connected, M1、M2Source level be connected and be connected to tail current source MnDrain electrode, MnSource level ground connection, grid connects partially
Set voltage vbias.
The both ends inductance L in main vibration circuit are separately connected two groups of tunable capacitor Cv1、Cv2、Cv3、Cv4, each group of tunable capacitor
One end be connected respectively with its biasing resistor, the other end of biasing resistor connects bias voltage Vb1、Vb2, power vd D connection L's
The resistance R of tap port and output buffer stage1、R2, the other end of tunable capacitor, which links together, is connected to control voltage vctrl, opens
Close the metal-oxide-semiconductor M in capacitor array3、M4、M5The grid of three is connected with each other, and is connected to switch control voltage s1, M jointly4、M5Source
Grade ground connection, drain electrode are respectively connected to M3Drain electrode and source level, and with capacitor C1、C2One end be connected, the other company of two groups of switching capacities
It is identical with this group to connect mode, three groups of capacitor C1With C2、C3With C4、C5With C6One end be connected with each other, be connected to jointly adjustable
The both ends of capacitor export the metal-oxide-semiconductor M of buffer stage12、M13Grid respectively with Cv1、Cv2Both ends be connected, source level ground connection, drain electrode
Respectively with resistance R1、R2It is connected, capacitor C7、C8One end connect metal-oxide-semiconductor M12、M13Drain electrode, the other end connect output end
outa、outb。
Wherein, oscillator does not need dynamic excitation signal exactly as its name suggests, itself can turn the energy of DC power supply
Turn to the circuit of periodic AC signal.Oscillator shows as positive feedback at frequency of oscillation, and oscillating condition must satisfy bar
Ke Haosen criterion, it may be assumed that
In formula, T (s) is loop gain.When being commonly designed circuit, it is contemplated that the influence of the factors such as ghost effect and temperature,
Loop gain is generally required to be greater than 3.
In LC resonance network, there are dead resistance R in resonant cavityp, this will cause the energy loss in resonant cavity, therefore humorous
Energy in vibration chamber is constantly reduced, and output amplitude exponentially decays, and just external energy is needed to be continually injected into LC in a steady stream at this time
In resonant cavity, energy loss is made up, resonant network can maintain oscillation.
Main vibration circuit L, C in the designv1、Cv2Constitute resonant network, negative resistance unit M1、M2External energy is provided for main vibration circuit
Amount.If M1、M2Mutual conductance be gm, then total negative resistance of negative resistance unit is -2/gm, to meet starting condition for oscillation, then negative resistance and dead resistance
Between to must satisfy relational expression as follows:
I.e.
gmRp≥2 (3)
After starting condition for oscillation meets, reasonable capacitor and inductance are designed, the frequency of oscillation of the millimeter wave needed could be obtained.This
In design, the frequency of oscillation of voltage controlled oscillator are as follows:
Wherein, L is inductance inductance value, CfixFor the capacitance of the fixed capacity of switched capacitor array, CvFor tunable capacitor capacitance, Cp
For the parasitic capacitance of circuit.
By control voltage s1, s2, s3 in control switch capacitor array, eight groups of different fixed capacities can be obtained and held
Value, along with the capacitance of tunable capacitor changes with the variation of control voltage vctrl, if variation range is Cvmin~Cvmax, then may be used
Obtain the minimum and maximum frequency of oscillation of voltage controlled oscillator in the design are as follows:
Wherein, C5=C6=2C3=2C4=4C1=4C2, it is contemplated that the influence of parasitic capacitance, the capacitance of fixed capacity
Have deviation.In addition, metal-oxide-semiconductor drain parasitic capacitance will affect tune when the control voltage in switched capacitor array is low level
Humorous range, it is therefore desirable to which the reasonably breadth length ratio of three groups of switch metal-oxide-semiconductors of design optimizes oscillator performance.
Based on TSMC 40nm CMOS technology, the embodiment of the present invention has carried out simulation optimization to foregoing circuit structure.Fig. 2 and
Fig. 3 show the simulation result of Transient sine-wave oscillation.As seen from the figure, the Induction Peried of designed voltage controlled oscillator is about
1.3ns, oscillation amplitude are about 0.52V, and Induction Peried and amplitude are functional, and sine waveform is stablized.
Fig. 4 gives the simulation curve figure of phase noise of voltage controlled oscillator.Two curves are respectively optimal and most bad phase
Position noise curve, as seen from the figure, under the control of three-position switch voltage, the optimal reachable -102.5dBc/Hz@1MHz of phase noise.
Fig. 5 gives the DC power simulation result of voltage controlled oscillator, Power=15.35dBm, about 34mW.
Fig. 6 is the tuning range simulation curve of voltage controlled oscillator in the design.As seen from the figure, in the control of three-position switch voltage
Under system, the frequency range of 8 frequency curves covering is 26~37GHz, and tuning range is about 35%.
It devises in conclusion the embodiment of the present invention is based on TSMC 40nm CMOS technology and a works in low supply voltage
Under, the mm wave voltage controlled oscillator of broad tuning range, it is negative using switched capacitor array and NMOS type under the operating voltage of 0.9V
Structure is hindered, main vibration circuit uses a tap inductor and two groups of bias voltage control tunable capacitor arrays, saves chip area, covering frequency
Rate is 26~37GHz, obtains 35% broad tuning range, and have good noiseproof feature, meets current frequency synthesizer
Requirement.
The embodiment of the present invention to the model of each device in addition to doing specified otherwise, the model of other devices with no restrictions,
As long as the device of above-mentioned function can be completed.
It will be appreciated by those skilled in the art that attached drawing is the schematic diagram of a preferred embodiment, the embodiments of the present invention
Serial number is for illustration only, does not represent the advantages or disadvantages of the embodiments.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (6)
1. the mm wave voltage controlled oscillator under a kind of low supply voltage, with broad tuning range, which is characterized in that the voltage-controlled vibration
Swing device by negative resistance unit, tail current source, main vibration circuit, auxiliary circuit, output buffer stage circuit,
Wherein, negative resistance unit provides energy for resonant cavity to maintain to vibrate, and tail current source provides direct current biasing for negative resistance unit；It is main
Vibration circuit is LC voltage controlled oscillator, realizes oscillation and carries out fine adjustments to frequency；
Auxiliary circuit is made of switching capacity, realizes the coarse adjustment of frequency, and output buffer stage circuit uses common source level structure, realizes pressure
Control oscillator is isolated with late-class circuit.
2. under a kind of low supply voltage according to claim 1, the mm wave voltage controlled oscillator with broad tuning range,
It is characterized in that,
The negative resistance unit uses NMOS type voltage controlled oscillator, reduces parasitic capacitance and the additional of PMOS cross-coupling pipe introducing is made an uproar
Sound.
3. under a kind of low supply voltage according to claim 1, the mm wave voltage controlled oscillator with broad tuning range,
It is characterized in that,
The main vibration circuit uses LC oscillator structure, comprising: an inductance L and two groups of tunable capacitors pass through selection
Inductance inductance value and capacitor's capacity control frequency of oscillation.
4. under a kind of low supply voltage according to claim 3, the mm wave voltage controlled oscillator with broad tuning range,
It is characterized in that,
Under the control of two groups of bias voltages, control the maximum curve of the capacitance curvilinear motion rate of tunable capacitor in control voltage
In the range of, control the frequency variation of voltage controlled oscillator, make high frequency in each band limits and low frequency part be connected
Frequency range has frequency overlapping.
5. under a kind of low supply voltage according to claim 1, the mm wave voltage controlled oscillator with broad tuning range,
It is characterized in that,
The auxiliary circuit uses Kind of Switched Capacitor Array, and extended frequency range controls three groups of electricity by three groups of voltages respectively
The conducting and disconnection of appearance, every three metal-oxide-semiconductors constitute one group of switch.
6. under a kind of low supply voltage according to claim 1, the mm wave voltage controlled oscillator with broad tuning range,
It is characterized in that, the minimum and maximum frequency of oscillation of the voltage controlled oscillator are as follows:
Wherein, L is tap inductor；Cvmin~CvmaxFor the capacitance constant interval of tunable capacitor；CpFor parasitic capacitance；C1、C3、C5?
For capacitor.
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Cited By (4)
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| CN110729967A (en) * | 2019-09-12 | 2020-01-24 | 天津大学 | Narrow-band switching millimeter wave voltage-controlled oscillator with wide tuning range |
| CN111988034A (en) * | 2020-07-07 | 2020-11-24 | 东南大学 | Variable capacitor of millimeter wave number controlled oscillator and preparation method thereof |
| CN112104328A (en) * | 2020-09-02 | 2020-12-18 | 华东师范大学 | Wide-range low-power fluctuation voltage-controlled oscillator using cooperative tuning buffer |
| CN114002634A (en) * | 2021-11-15 | 2022-02-01 | 安徽工程大学 | Calibration device and method for magnetic field-voltage coefficient of multi-channel magnetocardiogram detection system |
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| 李竹: "基于CMOS工艺的微波毫米波宽带压控振荡器研究与芯片设计", 《中国博士学位论文全文数据库 信息科技辑》 * |
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| CN110729967A (en) * | 2019-09-12 | 2020-01-24 | 天津大学 | Narrow-band switching millimeter wave voltage-controlled oscillator with wide tuning range |
| CN110729967B (en) * | 2019-09-12 | 2023-06-27 | 天津大学 | Narrow-band switching millimeter wave voltage-controlled oscillator with wide tuning range |
| CN111988034A (en) * | 2020-07-07 | 2020-11-24 | 东南大学 | Variable capacitor of millimeter wave number controlled oscillator and preparation method thereof |
| CN111988034B (en) * | 2020-07-07 | 2023-10-31 | 东南大学 | Variable capacitor of millimeter wave numerical control oscillator and preparation method thereof |
| CN112104328A (en) * | 2020-09-02 | 2020-12-18 | 华东师范大学 | Wide-range low-power fluctuation voltage-controlled oscillator using cooperative tuning buffer |
| CN112104328B (en) * | 2020-09-02 | 2023-07-25 | 华东师范大学 | Wide-range low-power fluctuation voltage-controlled oscillator using co-tuned buffer |
| CN114002634A (en) * | 2021-11-15 | 2022-02-01 | 安徽工程大学 | Calibration device and method for magnetic field-voltage coefficient of multi-channel magnetocardiogram detection system |
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