CN107834980A - Frequency mixer based on current multiplexing technology - Google Patents
Frequency mixer based on current multiplexing technology Download PDFInfo
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- CN107834980A CN107834980A CN201711239354.1A CN201711239354A CN107834980A CN 107834980 A CN107834980 A CN 107834980A CN 201711239354 A CN201711239354 A CN 201711239354A CN 107834980 A CN107834980 A CN 107834980A
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- 238000002347 injection Methods 0.000 claims description 10
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- 238000006243 chemical reaction Methods 0.000 abstract description 19
- 238000005265 energy consumption Methods 0.000 abstract description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1441—Balanced arrangements with transistors using field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03D—DEMODULATION OR TRANSFERENCE OF MODULATION FROM ONE CARRIER TO ANOTHER
- H03D7/00—Transference of modulation from one carrier to another, e.g. frequency-changing
- H03D7/14—Balanced arrangements
- H03D7/1425—Balanced arrangements with transistors
- H03D7/1491—Arrangements to linearise a transconductance stage of a mixer arrangement
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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Abstract
The present invention relates to the frequency mixer based on current multiplexing technology, including transconductance stage circuit, switching stage circuit and load stage circuit；Transconductance stage circuit, switching stage circuit and load stage circuit are sequentially connected；Transconductance stage circuit uses current multiplexing structure and source degeneracy induction structure；Load stage circuit transconductance stage circuit is used to access radio frequency voltage signal, and radio frequency voltage signal is converted into current radio frequency signal, and Reusability is carried out to current radio frequency signal；Switching stage circuit is used to access local oscillation signal and current radio frequency signal, its multiple switch pipe set is controlled to turn in turn according to local oscillation signal, turned in turn using multiple switch pipe and modulation is switched over to current radio frequency signal, generation current intermediate frequency signal is transmitted to load stage circuit；Load stage circuit is exported for current intermediate frequency signal to be converted into voltage signal.Compared with the prior art, the present invention is simple in construction, conversion gain is high, the linearity is good, noise is low, low in energy consumption, interport isolation is good.
Description
Technical field
The present invention relates to frequency mixer technical field, the more particularly to frequency mixer based on current multiplexing technology.
Background technology
With the high speed development of radio communication, the technology such as Internet of Things, mobile communication brings huge change to the life of people
Become.Technology of Internet of things develops rapidly so that people are continuously increased to communication equipment demand, and to its performance requirement increasingly
It is high.Radio-frequency transmitter is the important module of radio communication, and its performance indications affect whole wireless communication system, so radio frequency
The design of receiver front-end chip must develop towards low-power consumption, low cost, high-performance, high integration direction.Wherein frequency mixer
It is the chief component of radio-frequency transmitter, while is also the most strong part of radio-frequency front-end signal, so the performance of frequency mixer refers to
Mark affects the performance indications of whole radio-frequency front-end, therefore the performance for improving frequency mixer has great importance.Frequency mixer simultaneously
And the main energy dissipating portion of receiver front end circuit, after the linearity improves, its power consumption can increase again.Therefore, in frequency mixer
, it is necessary to consider to performance indications such as conversion gain, noise, the linearity, power consumption, isolations in design.
The content of the invention
It is an object of the invention to provide a kind of frequency mixer based on current multiplexing technology, technical problem to be solved is：
The performance that frequency mixer is improved on the basis of low-power consumption is restricted.
The technical scheme that the present invention solves above-mentioned technical problem is as follows：Based on the frequency mixer of current multiplexing technology, including across
Lead a grade circuit, switching stage circuit and load stage circuit；The transconductance stage circuit, switching stage circuit and load stage circuit connect successively
Connect；The transconductance stage circuit uses current multiplexing structure and source degeneracy induction structure；The transconductance stage circuit is used to access radio frequency
Voltage signal, radio frequency voltage signal is converted into current radio frequency signal, Reusability is carried out to current radio frequency signal；
The switching stage circuit is used to access local oscillation signal and current radio frequency signal, controls what it was set according to local oscillation signal
Multiple switch pipe turns in turn, is turned in turn using multiple switch pipe and modulation is switched over to current radio frequency signal, generates intermediate frequency
Current signal transfer is to load stage circuit；
The load stage circuit is exported for current intermediate frequency signal to be converted into voltage signal.
The beneficial effects of the invention are as follows：Transconductance stage circuit uses current multiplexing structure, reduce energy consumption, substantially increase it is mixed
The conversion gain of frequency device；Source degeneracy induction structure is used simultaneously, also the linearity is improved.
On the basis of above-mentioned technical proposal, the present invention can also do following improvement.
Further, the transconductance stage circuit includes PMOS M1, PMOS M3, NMOS tube M2, NMOS tube M4, and electric capacity C1~
Electric capacity C5 and inductance L1~inductance L4；The positive terminal RF+ connections of the grid and radio frequency voltage signal of the PMOS M1, its source class
It is connected with supply voltage VDD；The positive terminal RF+ connections of NMOS tube M2 grid and radio frequency voltage signal, it drains and PMOS
M1 drain electrode connection, its source class are connected through electric capacity C1 with its grid；One end of the electric capacity C2 is connected with NMOS tube M2 drain electrode,
The other end is connected with NMOS tube M2 source electrode；One end of the inductance L2 is connected with NMOS tube M2 source electrode, and the other end is through inductance
L4 is grounded；The electric capacity C5 is in parallel with inductance L4；
The negative pole end RF- connections of the grid and radio frequency voltage signal of the PMOS M3, its source class connect with supply voltage VDD
Connect；The positive terminal RF- connections of NMOS tube M4 grid and radio frequency voltage signal, its drain electrode are connected with PMOS M3 drain electrode, its
Source class is connected through electric capacity C3 with its grid；One end of the electric capacity C4 is connected with NMOS tube M4 drain electrode, the other end and NMOS tube
M4 source electrode connection；Inductance L3 one end is connected with NMOS tube M4 source electrode, the other end respectively with inductance L2, inductance L4 and electric capacity
C5 tie point connection；One end of the inductance L1 is connected with NMOS tube M2 drain electrode, other end NMOS tube M4 drain electrode connection.
It is using the above-mentioned further beneficial effect of scheme：Pass through metal-oxide-semiconductor M2 and metal-oxide-semiconductor M4 source class series passive device
The linearity can be improved by forming serial Feedback；Noise is reduced, power consumption is reduced, substantially increases the conversion gain of frequency mixer.
Further, the switching stage circuit includes NMOS tube M5, NMOS tube M6, NMOS tube M7 and NMOS tube M8, described
The positive terminal LO+ connections of NMOS tube M5 grid and local oscillation signal, its source class are connected with NMOS tube M2 drain electrode, and it drains and born
Carry the connection of level circuit；The negative pole end LO- connections of the grid and local oscillation signal of the NMOS tube M6, the source of its source class and NMOS tube M5
Pole is connected, and its drain electrode is connected with NMOS tube M8 drain electrode；The grid of the NMOS tube M7 and the negative pole end LO- of local oscillation signal connect
Connect, its source class is connected with NMOS tube M4 drain electrode, and its drain electrode is connected with NMOS tube M5 drain electrode；The grid of the NMOS tube M8 with
The negative pole end LO+ connections of local oscillation signal, its source class are connected with NMOS tube M4 drain electrode, and its drain electrode is connected with load stage circuit.
It is using the above-mentioned further beneficial effect of scheme：Access local oscillation signal, using metal-oxide-semiconductor the big signal of local oscillator control
Lower whorl conductance processed leads to, and modulation is switched over to electric current, to realize the conversion of frequency.
Further, the load stage circuit includes resistance R1, resistance R2 and electric capacity C6；One end of the resistance R1 and NMOS
Pipe M5 drain electrode connection, the other end are connected with supply voltage VDD；One end of the resistance R2 is connected with NMOS tube M8 drain electrode,
The other end is connected with supply voltage VDD；One end of the electric capacity C6 is connected with NMOS tube M5 drain electrode, the other end and NMOS tube M8
Drain electrode connection.
It is using the above-mentioned further beneficial effect of scheme：Electric capacity C6 can arrive branch on both sides of the road with equivalent, can provide conversion
Load needed for gain, moreover it is possible to play a part of filtering；Electric capacity C6 is equivalent can not only to amplify capacitance to circuit both sides, moreover it is possible to make
The area of domain reduces.
Further, in addition to current injection circuit, the current injection circuit include PMOS M9, PMOS M10 and
PMOS M11, the PMOS M9 grid connection are connected with DC offset voltage V0, and its source electrode is connected with supply voltage VDD,
Its drain electrode is connected with PMOS M10 source electrode；The grid of the PMOS M10 is connected with PMOS M11 drain electrode, its drain with
NMOS tube M2 drain electrode connection；The grid of the PMOS M11 is connected with PMOS M10 drain electrode, and it drains and NMOS tube M4
Drain electrode connection, its source class is connected with PMOS M10 source class.
It is using the above-mentioned further beneficial effect of scheme：The amplitude of noise current pulse can be significantly reduced, from
And 1/f noise is reduced, it also will not cause extra thermal noise as injecting quiescent current, realize conversion gain, noise, linear
Degree performance parameter can be improved.
Brief description of the drawings
Fig. 1 is the circuit theory diagrams of the frequency mixer of the invention based on current multiplexing technology.
Fig. 2 is the analogous diagram that conversion gain changes with local oscillation power in the present invention.
Fig. 3 is the analogous diagram that conversion gain changes with output frequency in the present invention.
Fig. 4 is noise coefficient simulation result figure of the present invention.
Fig. 5 is linearity simulation result figure of the present invention.
Fig. 6 is the power consumption sectional drawing of the present invention.
In accompanying drawing, the list of parts representated by each label is as follows：
1st, transconductance stage circuit, 2, switching stage circuit, 3, load stage circuit, 4, current injection circuit.
Embodiment
The principle and feature of the present invention are described below in conjunction with accompanying drawing, the given examples are served only to explain the present invention, and
It is non-to be used to limit the scope of the present invention.
As shown in figure 1, the frequency mixer based on current multiplexing technology, including transconductance stage circuit 1, switching stage circuit 2 and load
Level circuit 3；The transconductance stage circuit 1, switching stage circuit 2 and load stage circuit 3 are sequentially connected；The transconductance stage circuit 1 uses
Current multiplexing structure and source degeneracy induction structure；
The transconductance stage circuit 1 is used to access radio frequency voltage signal, and radio frequency voltage signal is converted into current radio frequency signal,
Reusability is carried out to current radio frequency signal；
The switching stage circuit 2 is used to access local oscillation signal and current radio frequency signal, and its setting is controlled according to local oscillation signal
Multiple switch pipe turn in turn, turned in turn using multiple switch pipe and modulation switched over to current radio frequency signal, in generation
Frequency current signal transfer is to load stage circuit 3；
The load stage circuit 3 is exported for current intermediate frequency signal to be converted into voltage signal.
In above-described embodiment, transconductance stage circuit 1 uses current multiplexing structure, substantially increases the conversion gain of frequency mixer；
Source degeneracy induction structure is used simultaneously, also the linearity is improved.
Optionally, as one embodiment of the present of invention：The transconductance stage circuit 1 includes PMOS M1, PMOS M3,
NMOS tube M2, NMOS tube M4, electric capacity C1~electric capacity C5 and inductance L1~inductance L4；The grid and radio-frequency voltage of the PMOS M1
The positive terminal RF+ connections of signal, its source class are connected with supply voltage VDD；NMOS tube M2 grid and radio frequency voltage signal is just
Extreme RF+ connections, its drain electrode are connected with PMOS M1 drain electrode, and its source class is connected through electric capacity C1 with its grid；The electric capacity C2
One end be connected with NMOS tube M2 drain electrode, the other end is connected with NMOS tube M2 source electrode；One end of the inductance L2 and NMOS
Pipe M2 source electrode connection, the other end are grounded through inductance L4；The electric capacity C5 is in parallel with inductance L4；
The negative pole end RF- connections of the grid and radio frequency voltage signal of the PMOS M3, its source class connect with supply voltage VDD
Connect；The positive terminal RF- connections of NMOS tube M4 grid and radio frequency voltage signal, its drain electrode are connected with PMOS M3 drain electrode, its
Source class is connected through electric capacity C3 with its grid；One end of the electric capacity C4 is connected with NMOS tube M4 drain electrode, the other end and NMOS tube
M4 source electrode connection；Inductance L3 one end is connected with NMOS tube M4 source electrode, the other end respectively with inductance L2, inductance L4 and electric capacity
C5 tie point connection；One end of the inductance L1 is connected with NMOS tube M2 drain electrode, other end NMOS tube M4 drain electrode connection.
When radio frequency+conducting, PMOS M1, NMOS tube M2 conducting, PMOS M3, NMOS tube M4 cut-off；When radio frequency-
During conducting, PMOS M3, NMOS tube M4 conducting, PMOS M1, NMOS tube M2 cut-off.Fully differential transconductance stage uses source degeneracy inductance
Structure, radio-frequency current is exported, there are preferably input matching properties, also improve the linearity of circuit.In radio-frequency transmitter,
The conversion gain of previous stage frequency mixer is higher, and the noise perfomiance requirements of rear stage circuit can be reduced.The gain table of frequency mixer
It is up to formula：
gmIt is the mutual conductance of frequency mixer, RLFor load resistance.From above formula, can by increase mutual conductance and load resistance come
Improve the gain of frequency mixer.If improving the mutual conductance of frequency mixer, the power consumption of circuit can be increased.If improve load resistance, loading resistor
On direct current pressure drop can increase, reduce output voltage swing so that switching stage and the metal-oxide-semiconductor of transconductance stage are not operate at saturation region,
Influence the linearity of circuit.Therefore current multiplexing structure, the so bar in low current are constituted using metal-oxide-semiconductor M1 to metal-oxide-semiconductor M4
Higher mutual conductance is obtained under part, also reduces the power consumption of frequency mixer.
The linear of frequency mixer can be improved by forming serial Feedback by metal-oxide-semiconductor M2, metal-oxide-semiconductor M4 source class series passive device
Degree.There is part document to improve the linearity of frequency mixer as feedback device using resistance, electric capacity, inductance in some documents.
But during according to resistance, extra Resistance Thermal Noise can be caused so that the noiseproof feature of frequency mixer reduces.According to electric capacity or
Inductance will not then reduce noiseproof feature as negative-feedback.But need to increase extra direct current during using electric capacity as feedback device
Path, so using using inductance L2, inductance L3 as feedback device, current multiplexing is constituted using metal-oxide-semiconductor M1 to metal-oxide-semiconductor M4
Structure, so obtains higher mutual conductance under conditions of low current, also make it that the power consumption of frequency mixer is reduced；Electric capacity
C1, electric capacity C3, inductance L2, inductance L3 provide preferably input matching properties, also improve the linearity of circuit；Tail current is adopted
A resonant tank is formd with inductance L4, electric capacity C5, forms the empty AC current sources of a zero net.In order to eliminate parasitic capacitance
Influence, connected an inductance L1 between transconductance stage circuit 1 and switching stage circuit 2 so that the linearity of frequency mixer obtains
Improve.
Optionally, as one embodiment of the present of invention：The switching stage circuit 2 include NMOS tube M5, NMOS tube M6,
The positive terminal LO+ connections of NMOS tube M7 and NMOS tube M8, the NMOS tube M5 grid and local oscillation signal, its source class and NMOS tube
M2 drain electrode connection, its drain electrode are connected with load stage circuit 3；The grid of the NMOS tube M6 and the negative pole end LO- of local oscillation signal
Connection, its source class are connected with NMOS tube M5 source electrode, and its drain electrode is connected with NMOS tube M8 drain electrode；The grid of the NMOS tube M7
It is connected with the negative pole end LO- of local oscillation signal, its source class is connected with NMOS tube M4 drain electrode, and its drain electrode to drain with NMOS tube M5 connects
Connect；The negative pole end LO+ connections of the grid and local oscillation signal of the NMOS tube M8, its source class are connected with NMOS tube M4 drain electrode, its
Drain electrode is connected with load stage circuit 3.
In examples detailed above, the switching stage accesses local oscillation signal, using metal-oxide-semiconductor the big signal of local oscillator control lower whorl conductance
Logical, when LO+ is turned on, NMOS tube M5 and NMOS tube M8 conductings, NMOS tube M6 and NMOS tube M7 end；When LO- is turned on, NMOS
Pipe M6 and NMOS tube M7 conductings, NMOS tube M5 and NMOS tube M8 cut-offs, switch over modulation to electric current with this, realize frequency
Conversion.
Optionally, as one embodiment of the present of invention：The load stage circuit 3 includes resistance R1, resistance R2 and electric capacity
C6；One end of the resistance R1 is connected with NMOS tube M5 drain electrode, and the other end is connected with supply voltage VDD；The resistance R2's
One end is connected with NMOS tube M8 drain electrode, and the other end is connected with supply voltage VDD；One end of the electric capacity C6 is with NMOS tube M5's
Drain electrode connection, the other end are connected with NMOS tube M8 drain electrode.
In examples detailed above, when inputting difference mode signal, electric capacity C6 impedance values are usually AC earth, can arrive branch road with equivalent
Both sides, with for providing the load needed for conversion gain, moreover it is possible to play a part of filtering.The electric capacity C6 of bridge joint is equivalent to arrive circuit two
Side can not only amplify capacitance, moreover it is possible to reduce the area of domain.
Optionally, as one embodiment of the present of invention：Also include current injection circuit 4, the current injection circuit 4 wraps
The grid connection for including PMOS M9, PMOS M10 and PMOS M11, the PMOS M9 is connected with DC offset voltage V0, its
Source electrode is connected with supply voltage VDD, and its drain electrode is connected with PMOS M10 source electrode；The grid and PMOS of the PMOS M10
M11 drain electrode connection, its drain electrode are connected with NMOS tube M2 drain electrode；The grid of the PMOS M11 and PMOS M10 drain electrode
Connection, its drain electrode are connected with NMOS tube M4 drain electrode, and its source class is connected with PMOS M10 source class.
Current injection circuit 4 employs dynamic current injection technique, simultaneously turn in PMOS M10 and PMOS M11 or
The moment of person's switch motion, current impulse can be produced；When switching a pair of metal-oxide-semiconductor conductings of centering, the cut-off of another pair metal-oxide-semiconductor, stream
The electric current for crossing metal-oxide-semiconductor is determined by the electric current of mutual conductance pipe, and noise is not contributed；This circuit is using a kind of dynamic electric current injection skill
Art, when switch simultaneously turns on to NMOS tube, the voltage at the common source node of switching stage circuit 2 reaches minimum, PMOS M9, PMOS
Pipe M10 and PMOS M11 conductings, take away switching to the electric current of common source node, when simultaneously the NMOS tube of switch centering is not led
When logical, the voltage at common source node is very high, PMOS M9, PMOS M10 and PMOS M11 cut-offs, does not take electric current away；Can have
The amplitude of noise current pulse is reduced to effect, so as to reduce 1/f noise, will not also be caused as injecting quiescent current extra
Thermal noise, due to only having switching moments to extract electric current, therefore thermal noise will not be introduced substantially；We are by setting rational electricity
Feel L1 values, make it that resonance occur with parasitic capacitance；When resonant frequency resonance is in ωRFWhen, the conversion gain of frequency mixer is changed
It is kind；When resonant frequency point selection is in 2 ωRFWhen, parasitic capacitance impedance is reduced to original 1/3, makes secondary caused by parasitic capacitance
Harmonic non-linear is reduced to minimum；Analysis more than can be seen that when resonance point is in different frequencies, the linearity or gain
Performance can reach good optimization in specific frequency；In this example, by selecting suitable inductance L1 so that source node together
Total parasitic capacitance resonant frequency at place is between radio frequency fundamental wave and radio frequency second harmonic, the conversion gain of this programme, noise, line
Property degree performance parameter can be improved.
The analogous diagram that changes with local oscillation power of conversion gain of the frequency mixer of the present invention is illustrated in figure 2, can be with from figure
Find out, the conversion gain of the frequency mixer can reach more than 25.4dB.
The analogous diagram that changes with output frequency of conversion gain of the frequency mixer of the present invention is illustrated in figure 3, can be with from figure
Find out, the conversion gain of the frequency mixer is 25.4dB.
The analogous diagram of the noise coefficient of the frequency mixer of the present invention is illustrated in figure 4, it can be seen that the frequency mixer
Noise coefficient is 7.78dB.
The analogous diagram of the linearity of the frequency mixer of the present invention is illustrated in figure 5, it can be seen that the line of the frequency mixer
Property degree is 26.04dBm.
The power consumption diagram of the frequency mixer of the present invention is illustrated in figure 6, it can be seen that the power consumption of the frequency mixer is 8mW.
The foregoing is only presently preferred embodiments of the present invention, be not intended to limit the invention, it is all the present invention spirit and
Within principle, any modification, equivalent substitution and improvements made etc., it should be included in the scope of the protection.
Claims (4)
1. the frequency mixer based on current multiplexing technology, it is characterised in that：Including transconductance stage circuit (1), switching stage circuit (2) and bear
Carry level circuit (3)；The transconductance stage circuit (1), switching stage circuit (2) and load stage circuit (3) are sequentially connected；The transconductance stage
Circuit (1) uses current multiplexing structure and source degeneracy induction structure；
The transconductance stage circuit (1) is used to access radio frequency voltage signal, and radio frequency voltage signal is converted into current radio frequency signal, right
Current radio frequency signal carries out Reusability；
The switching stage circuit (2) is used to access local oscillation signal and current radio frequency signal, controls what it was set according to local oscillation signal
Multiple switch pipe turns in turn, is turned in turn using multiple switch pipe and modulation is switched over to current radio frequency signal, generates intermediate frequency
Current signal transfer is to load stage circuit (3)；
The load stage circuit (3) is exported for current intermediate frequency signal to be converted into voltage signal；The transconductance stage circuit
(1) PMOS M1, PMOS M3, NMOS tube M2, NMOS tube M4, electric capacity C1~electric capacity C5 and inductance L1~inductance L4 are included；Institute
The positive terminal RF+ connections of PMOS M1 grid and radio frequency voltage signal are stated, its source class is connected with supply voltage VDD；NMOS tube
The positive terminal RF+ connections of M2 grid and radio frequency voltage signal, its drain electrode are connected with PMOS M1 drain electrode, and its source class is through electric capacity
C1 is connected with its grid；One end of the electric capacity C2 is connected with NMOS tube M2 drain electrode, and the source electrode of the other end and NMOS tube M2 connects
Connect；One end of the inductance L2 is connected with NMOS tube M2 source electrode, and the other end is grounded through inductance L4；The electric capacity C5 and inductance L4
It is in parallel；
The negative pole end RF- connections of the grid and radio frequency voltage signal of the PMOS M3, its source class are connected with supply voltage VDD；
The positive terminal RF- connections of NMOS tube M4 grid and radio frequency voltage signal, its drain electrode are connected with PMOS M3 drain electrode, its source class
It is connected through electric capacity C3 with its grid；One end of the electric capacity C4 is connected with NMOS tube M4 drain electrode, and the other end is with NMOS tube M4's
Source electrode connects；Inductance L3 one end is connected with NMOS tube M4 source electrode, the other end respectively with inductance L2, inductance L4 and electric capacity C5
Tie point connects；One end of the inductance L1 is connected with NMOS tube M2 drain electrode, other end NMOS tube M4 drain electrode connection.
2. the frequency mixer according to claim 1 based on current multiplexing technology, it is characterised in that：The switching stage circuit
(2) NMOS tube M5, NMOS tube M6, NMOS tube M7 and NMOS tube M8, the NMOS tube M5 grid and local oscillation signal are being included just
Extreme LO+ connections, its source class are connected with NMOS tube M2 drain electrode, and its drain electrode is connected with load stage circuit (3)；The NMOS tube M6
Grid and local oscillation signal negative pole end LO- connections, its source class is connected with NMOS tube M5 source electrode, and it drains and NMOS tube M8's
Drain electrode connection；The negative pole end LO- connections of the grid and local oscillation signal of the NMOS tube M7, the drain electrode of its source class and NMOS tube M4 connect
Connect, its drain electrode is connected with NMOS tube M5 drain electrode；The negative pole end LO+ connections of the grid and local oscillation signal of the NMOS tube M8, its
Source class is connected with NMOS tube M4 drain electrode, and its drain electrode is connected with load stage circuit (3).
3. the frequency mixer according to claim 2 based on current multiplexing technology, it is characterised in that：The load stage circuit
(3) resistance R1, resistance R2 and electric capacity C6 are included；One end of the resistance R1 is connected with NMOS tube M5 drain electrode, the other end and electricity
Source voltage VDD connections；One end of the resistance R2 is connected with NMOS tube M8 drain electrode, and the other end is connected with supply voltage VDD；Institute
The one end for stating electric capacity C6 is connected with NMOS tube M5 drain electrode, and the other end is connected with NMOS tube M8 drain electrode.
4. the frequency mixer according to claim 3 based on current multiplexing technology, it is characterised in that：Also include electric current injection electricity
Road (4), the current injection circuit (4) include PMOS M9, PMOS M10 and PMOS M11, the grid of the PMOS M9
Connection is connected with DC offset voltage V0, and its source electrode is connected with supply voltage VDD, and its drain electrode is connected with PMOS M10 source electrode；
The grid of the PMOS M10 is connected with PMOS M11 drain electrode, and its drain electrode is connected with NMOS tube M2 drain electrode；The PMOS
Pipe M11 grid is connected with PMOS M10 drain electrode, and its drain electrode is connected with NMOS tube M4 drain electrode, its source class and PMOS M10
Source class connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711239354.1A CN107834980B (en) | 2017-11-30 | 2017-11-30 | Mixer based on current multiplexing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711239354.1A CN107834980B (en) | 2017-11-30 | 2017-11-30 | Mixer based on current multiplexing technology |
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| CN107834980B CN107834980B (en) | 2024-02-13 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020000614A1 (en) * | 2018-06-29 | 2020-01-02 | 樊璠 | Frequency mixer circuit |
| CN112054770A (en) * | 2020-09-04 | 2020-12-08 | 中筑科技股份有限公司 | Mixer circuit applied to remote control system and radio frequency tag circuit |
| CN112910416A (en) * | 2021-01-14 | 2021-06-04 | 温州大学 | High-gain millimeter wave mixer applied to automobile radar |
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| US10903807B2 (en) | 2018-06-29 | 2021-01-26 | Fan FAN | Mixer circuit |
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| CN112910416A (en) * | 2021-01-14 | 2021-06-04 | 温州大学 | High-gain millimeter wave mixer applied to automobile radar |
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