CN207410303U - Frequency mixer based on current multiplexing technology - Google Patents
Frequency mixer based on current multiplexing technology Download PDFInfo
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- CN207410303U CN207410303U CN201721641860.9U CN201721641860U CN207410303U CN 207410303 U CN207410303 U CN 207410303U CN 201721641860 U CN201721641860 U CN 201721641860U CN 207410303 U CN207410303 U CN 207410303U
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Abstract
The utility model is related to the frequency mixer based on current multiplexing technology, including transconductance stage circuit, switching stage circuit and load stage circuit；Transconductance stage circuit, switching stage circuit and load stage circuit are sequentially connected；Transconductance stage circuit uses current multiplexing structure and source degeneracy induction structure；Radio frequency voltage signal is converted into current radio frequency signal, Reusability is carried out to current radio frequency signal by load stage circuit transconductance stage circuit for accessing radio frequency voltage signal；Switching stage circuit is used to access local oscillation signal and current radio frequency signal, according to local oscillation signal its multiple switch pipe set is controlled to turn in turn, it is turned in turn using multiple switch pipe and modulation is switched over to current radio frequency signal, generation current intermediate frequency signal is transmitted to load stage circuit；Load stage circuit exports for current intermediate frequency signal to be converted into voltage signal.Compared with the prior art, the utility model is simple in structure, conversion gain is high, the linearity is good, noise is low, low in energy consumption, interport isolation is good.
Description
Technical field
The utility model is related to frequency mixer technical fields, the more particularly to frequency mixer based on current multiplexing technology.
Background technology
With the high speed development of wireless communication, the technologies such as Internet of Things, mobile communication bring huge change to people’s lives
Become.The rapid development of technology of Internet of things causes people to be continuously increased communication equipment demand, and to its performance requirement increasingly
It is high.Radio-frequency transmitter is the important module of wireless communication, its performance indicator affects entire wireless communication system, so radio frequency
The design of receiver front-end chip must develop towards low-power consumption, low cost, high-performance, high integration direction.Wherein frequency mixer
It is the chief component of radio-frequency transmitter, while is also the most strong part of radio-frequency front-end signal, so the performance of frequency mixer refers to
Mark affects the performance indicator of entire radio-frequency front-end, therefore the performance for improving frequency mixer has great importance.Frequency mixer simultaneously
And the main energy dissipating portion of receiver front end circuit, after the linearity improves, power consumption can increase again.Therefore, in frequency mixer
, it is necessary to consider to performance indicators such as conversion gain, noise, the linearity, power consumption, isolations in design.
Utility model content
The purpose of this utility model is to provide a kind of frequency mixer based on current multiplexing technology, technical problem to be solved
It is：The performance that frequency mixer is improved on the basis of low-power consumption is restricted.
The technical solution that the utility model solves above-mentioned technical problem is as follows：Based on the frequency mixer of current multiplexing technology, bag
Include transconductance stage circuit, switching stage circuit and load stage circuit；The transconductance stage circuit, switching stage circuit and load stage circuit are successively
Connection；The transconductance stage circuit uses current multiplexing structure and source degeneracy induction structure；The transconductance stage circuit is penetrated for accessing
Radio frequency voltage signal is converted into current radio frequency signal by frequency voltage signal, and Reusability is carried out to current radio frequency signal；
The switching stage circuit controls what it was set for accessing local oscillation signal and current radio frequency signal, according to local oscillation signal
Multiple switch pipe turns in turn, is turned in turn using multiple switch pipe and modulation is switched over to current radio frequency signal, generates intermediate frequency
Current signal transfer is to load stage circuit；
The load stage circuit exports for current intermediate frequency signal to be converted into voltage signal.
The beneficial effects of the utility model are：Transconductance stage circuit uses current multiplexing structure, reduces energy consumption, greatly improves
The conversion gain of frequency mixer；Simultaneously using source degeneracy induction structure, also so that the linearity is improved.
Based on the above technical solutions, the utility model can also do following improvement.
Further, the transconductance stage circuit include PMOS tube M1, PMOS tube M3, NMOS tube M2, NMOS tube M4, capacitance C1~
Capacitance C5 and inductance L1~inductance L4；The positive terminal RF+ connections of the grid and radio frequency voltage signal of the PMOS tube M1, source level
It is connected with supply voltage VDD；The positive terminal RF+ connections of the grid and radio frequency voltage signal of NMOS tube M2, drain electrode and PMOS tube
The drain electrode connection of M1, source level are connected through capacitance C1 with its grid；One end of the capacitance C2 is connected with the drain electrode of NMOS tube M2,
The other end is connected with the source electrode of NMOS tube M2；One end of the inductance L2 is connected with the source electrode of NMOS tube M2, and the other end is through inductance
L4 is grounded；The capacitance C5 is in parallel with inductance L4；
The negative pole end RF- connections of the grid and radio frequency voltage signal of the PMOS tube M3, source level connect with supply voltage VDD
It connects；The positive terminal RF- connections of the grid and radio frequency voltage signal of NMOS tube M4, drain electrode are connected with the drain electrode of PMOS tube M3,
Source level is connected through capacitance C3 with its grid；One end of the capacitance C4 is connected with the drain electrode of NMOS tube M4, the other end and NMOS tube
The source electrode connection of M4；One end of inductance L3 is connected with the source electrode of NMOS tube M4, the other end respectively with inductance L2, inductance L4 and capacitance
The tie point connection of C5；One end of the inductance L1 is connected with the drain electrode of NMOS tube M2, the drain electrode connection of other end NMOS tube M4.
Advantageous effect using above-mentioned further scheme is：Pass through the source level series passive device of metal-oxide-semiconductor M2 and metal-oxide-semiconductor M4
The linearity can be improved by forming serial Feedback；Noise is reduced, power consumption is reduced, substantially increases the conversion gain of frequency mixer.
Further, the switching stage circuit includes NMOS tube M5, NMOS tube M6, NMOS tube M7 and NMOS tube M8, described
The positive terminal LO+ connections of the grid and local oscillation signal of NMOS tube M5, source level are connected with the drain electrode of NMOS tube M2, and drain electrode is with bearing
Carry the connection of grade circuit；The negative pole end LO- connections of the grid and local oscillation signal of the NMOS tube M6, the source of source level and NMOS tube M5
Pole connects, and drain electrode is connected with the drain electrode of NMOS tube M8；The grid of the NMOS tube M7 and the negative pole end LO- of local oscillation signal connect
It connects, source level is connected with the drain electrode of NMOS tube M4, and drain electrode is connected with the drain electrode of NMOS tube M5；The grid of the NMOS tube M8 with
The negative pole end LO+ connections of local oscillation signal, source level are connected with the drain electrode of NMOS tube M4, and drain electrode is connected with load stage circuit.
Advantageous effect using above-mentioned further scheme is：Access local oscillation signal, using metal-oxide-semiconductor the big signal of local oscillator control
Lower whorl conductance processed leads to, and modulation is switched over to electric current, to realize the conversion of frequency.
Further, the load stage circuit includes resistance R1, resistance R2 and capacitance C6；One end of the resistance R1 and NMOS
The drain electrode connection of pipe M5, the other end are connected with supply voltage VDD；One end of the resistance R2 is connected with the drain electrode of NMOS tube M8,
The other end is connected with supply voltage VDD；One end of the capacitance C6 is connected with the drain electrode of NMOS tube M5, the other end and NMOS tube M8
Drain electrode connection.
Advantageous effect using above-mentioned further scheme is：Capacitance C6 equivalent can arrive branch on both sides of the road, can provide conversion
Load needed for gain, moreover it is possible to play the role of filtering；Capacitance C6 is equivalent can not only to amplify capacitance to circuit both sides, moreover it is possible to make
The area of domain reduces.
Further, further include current injection circuit, the current injection circuit include PMOS tube M9, PMOS tube M10 and
The grid connection of PMOS tube M11, the PMOS tube M9 are connected with DC offset voltage V0, and source electrode is connected with supply voltage VDD,
Its drain electrode is connected with the source electrode of PMOS tube M10；The grid of the PMOS tube M10 is connected with the drain electrode of PMOS tube M11, drain electrode with
The drain electrode connection of NMOS tube M2；The grid of the PMOS tube M11 is connected with the drain electrode of PMOS tube M10, drain electrode and NMOS tube M4
Drain electrode connection, source level is connected with the source level of PMOS tube M10.
Advantageous effect using above-mentioned further scheme is：The amplitude of noise current pulse can be significantly reduced, from
And 1/f noise is reduced, additional thermal noise will not be caused as injecting quiescent current, realize conversion gain, noise, linear
Degree performance parameter can be improved.
Description of the drawings
Fig. 1 is the circuit diagram of frequency mixer of the utility model based on current multiplexing technology.
Fig. 2 is the analogous diagram that conversion gain changes with local oscillation power in the utility model.
Fig. 3 is the analogous diagram that conversion gain changes with output frequency in the utility model.
Fig. 4 is the utility model noise coefficient simulation result figure.
Fig. 5 is the utility model linearity simulation result figure.
Fig. 6 is the power consumption sectional drawing of the utility model.
In attached drawing, parts list represented by the reference numerals is as follows：
1st, transconductance stage circuit, 2, switching stage circuit, 3, load stage circuit, 4, current injection circuit.
Specific embodiment
The principle and feature of the utility model are described below in conjunction with attached drawing, example is served only for explaining this practicality
It is new, it is not intended to limit the scope of the utility model.
As shown in Figure 1, the frequency mixer based on current multiplexing technology, including transconductance stage circuit 1, switching stage circuit 2 and load
Grade circuit 3；The transconductance stage circuit 1, switching stage circuit 2 and load stage circuit 3 are sequentially connected；The transconductance stage circuit 1 uses
Current multiplexing structure and source degeneracy induction structure；
The transconductance stage circuit 1 is used to access radio frequency voltage signal, and radio frequency voltage signal is converted into current radio frequency signal,
Reusability is carried out to current radio frequency signal；
The switching stage circuit 2 controls its setting for accessing local oscillation signal and current radio frequency signal according to local oscillation signal
Multiple switch pipe turn in turn, turned in turn using multiple switch pipe and modulation switched over to current radio frequency signal, in generation
Frequency current signal transfer is to load stage circuit 3；
The load stage circuit 3 exports for current intermediate frequency signal to be converted into voltage signal.
In above-described embodiment, transconductance stage circuit 1 uses current multiplexing structure, substantially increases the conversion gain of frequency mixer；
Simultaneously using source degeneracy induction structure, also so that the linearity is improved.
Optionally, one embodiment as the utility model：The transconductance stage circuit 1 includes PMOS tube M1, PMOS tube
M3, NMOS tube M2, NMOS tube M4, capacitance C1~capacitance C5 and inductance L1~inductance L4；The grid and radio frequency of the PMOS tube M1
The positive terminal RF+ connections of voltage signal, source level are connected with supply voltage VDD；The grid and radio frequency voltage signal of NMOS tube M2
Positive terminal RF+ connections, drain electrode be connected with the drain electrode of PMOS tube M1, source level is connected through capacitance C1 with its grid；The electricity
The one end for holding C2 is connected with the drain electrode of NMOS tube M2, and the other end is connected with the source electrode of NMOS tube M2；One end of the inductance L2 with
The source electrode connection of NMOS tube M2, the other end are grounded through inductance L4；The capacitance C5 is in parallel with inductance L4；
The negative pole end RF- connections of the grid and radio frequency voltage signal of the PMOS tube M3, source level connect with supply voltage VDD
It connects；The positive terminal RF- connections of the grid and radio frequency voltage signal of NMOS tube M4, drain electrode are connected with the drain electrode of PMOS tube M3,
Source level is connected through capacitance C3 with its grid；One end of the capacitance C4 is connected with the drain electrode of NMOS tube M4, the other end and NMOS tube
The source electrode connection of M4；One end of inductance L3 is connected with the source electrode of NMOS tube M4, the other end respectively with inductance L2, inductance L4 and capacitance
The tie point connection of C5；One end of the inductance L1 is connected with the drain electrode of NMOS tube M2, the drain electrode connection of other end NMOS tube M4.
When radio frequency+conducting, PMOS tube M1, NMOS tube M2 conducting, PMOS tube M3, NMOS tube M4 cut-off；When radio frequency-
During conducting, PMOS tube M3, NMOS tube M4 conducting, PMOS tube M1, NMOS tube M2 cut-off.Fully differential transconductance stage uses source degeneracy inductance
Structure exports radio-frequency current, has preferable input matching properties, also improves the linearity of circuit.In radio-frequency transmitter,
The conversion gain of previous stage frequency mixer is higher, and the noise perfomiance requirements of rear stage circuit can be reduced.The gain table of frequency mixer
It is up to formula：
gmIt is the mutual conductance of frequency mixer, RLFor load resistance.From above formula, can by increase mutual conductance and load resistance come
Improve the gain of frequency mixer.If improving the mutual conductance of frequency mixer, the power consumption of circuit can be increased.If improve load resistance, loading resistor
On direct current pressure drop can increase, reduce output voltage swing so that switching stage and the metal-oxide-semiconductor of transconductance stage are not operate at saturation region,
Influence the linearity of circuit.Therefore current multiplexing structure, the so item in low current are constituted using metal-oxide-semiconductor M1 to metal-oxide-semiconductor M4
Higher mutual conductance is obtained under part, also reduces the power consumption of frequency mixer.
The linear of frequency mixer can be improved by forming serial Feedback by the source level series passive device of metal-oxide-semiconductor M2, metal-oxide-semiconductor M4
Degree.There is part document to improve the linearity of frequency mixer as feedback device using resistance, capacitance, inductance in some documents.
But during according to resistance, additional Resistance Thermal Noise can be caused so that the noiseproof feature of frequency mixer reduces.According to capacitance or
Inductance will not then reduce noiseproof feature as negative-feedback.But it needs to increase additional direct current during using capacitance as feedback device
So using using inductance L2, inductance L3 as feedback device, current multiplexing is constituted using metal-oxide-semiconductor M1 to metal-oxide-semiconductor M4 for access
Structure so obtains higher mutual conductance under conditions of low current, also so that the power consumption of frequency mixer is reduced；Capacitance
C1, capacitance C3, inductance L2, inductance L3 provide preferable input matching properties, also improve the linearity of circuit；Tail current is adopted
A resonant tank is formd with inductance L4, capacitance C5, forms the AC current sources of a zero net sky.In order to eliminate parasitic capacitance
Influence, connected an inductance L1 between transconductance stage circuit 1 and switching stage circuit 2 so that the linearity of frequency mixer obtains
Improve.
Optionally, one embodiment as the utility model：The switching stage circuit 2 includes NMOS tube M5, NMOS tube
The positive terminal LO+ connections of the grid and local oscillation signal of M6, NMOS tube M7 and NMOS tube M8, the NMOS tube M5, source level with
The drain electrode connection of NMOS tube M2, drain electrode are connected with load stage circuit 3；The grid of the NMOS tube M6 and the cathode of local oscillation signal
LO- connections are held, source level is connected with the source electrode of NMOS tube M5, and drain electrode is connected with the drain electrode of NMOS tube M8；The NMOS tube M7
Grid and local oscillation signal negative pole end LO- connections, source level is connected with the drain electrode of NMOS tube M4, and drain electrode is with NMOS tube M5's
Drain electrode connection；The negative pole end LO+ connections of the grid and local oscillation signal of the NMOS tube M8, the drain electrode of source level and NMOS tube M4 connect
It connects, drain electrode is connected with load stage circuit 3.
In examples detailed above, the switching stage accesses local oscillation signal, using metal-oxide-semiconductor the big signal of local oscillator control lower whorl conductance
Logical, when LO+ is turned on, NMOS tube M5 and NMOS tube M8 conductings, NMOS tube M6 and NMOS tube M7 end；When LO- is turned on, NMOS
Pipe M6 and NMOS tube M7 conductings, NMOS tube M5 and NMOS tube M8 cut-offs, switch over electric current modulation with this, realize frequency
Conversion.
Optionally, one embodiment as the utility model：The load stage circuit 3 include resistance R1, resistance R2 and
Capacitance C6；One end of the resistance R1 is connected with the drain electrode of NMOS tube M5, and the other end is connected with supply voltage VDD；The resistance
One end of R2 is connected with the drain electrode of NMOS tube M8, and the other end is connected with supply voltage VDD；One end of the capacitance C6 and NMOS tube
The drain electrode connection of M5, the other end are connected with the drain electrode of NMOS tube M8.
In examples detailed above, when inputting difference mode signal, capacitance C6 impedance values are usually AC earth, can be equivalent to branch
Both sides, with the load for being used for providing needed for conversion gain, moreover it is possible to play the role of filtering.The capacitance C6 of bridge joint is equivalent to circuit two
Side can not only amplify capacitance, moreover it is possible to reduce the area of domain.
Optionally, one embodiment as the utility model：Further include current injection circuit 4, the electric current injection electricity
Road 4 includes PMOS tube M9, PMOS tube M10 and the grid connection of PMOS tube M11, the PMOS tube M9 connect with DC offset voltage V0
It connects, source electrode is connected with supply voltage VDD, and drain electrode is connected with the source electrode of PMOS tube M10；The grid of the PMOS tube M10 with
The drain electrode connection of PMOS tube M11, drain electrode are connected with the drain electrode of NMOS tube M2；The grid of the PMOS tube M11 and PMOS tube M10
Drain electrode connection, drain electrode be connected with the drain electrode of NMOS tube M4, source level is connected with the source level of PMOS tube M10.
Current injection circuit 4 employs dynamic current injection technique, simultaneously turn in PMOS tube M10 and PMOS tube M11 or
The moment of person's switch motion can generate current impulse；When switching the conducting of centering a pair of metal-oxide-semiconductor, the cut-off of another pair metal-oxide-semiconductor, stream
The electric current for crossing metal-oxide-semiconductor is determined by the electric current of mutual conductance pipe, and noise is not contributed；This circuit is using a kind of dynamic electric current injection skill
Art, when switch simultaneously turns on NMOS tube, the voltage at 2 common source node of switching stage circuit reaches minimum, PMOS tube M9, PMOS
Pipe M10 and PMOS tube M11 conductings, switch takes the electric current of common source node away, when the NMOS tube of switch centering is not led simultaneously
When logical, the voltage at common source node is very high, and electric current is not taken in PMOS tube M9, PMOS tube M10 and PMOS tube M11 cut-offs away；Can have
The amplitude of noise current pulse is reduced to effect, so as to reduce 1/f noise, will not be caused as injecting quiescent current additional
Thermal noise, due to only have switching moments extract electric current, thermal noise will not be introduced substantially；We are by setting rational electricity
Feel L1 values, make it that resonance occur with parasitic capacitance；When resonant frequency resonance is in ωRFWhen, the conversion gain of frequency mixer is changed
It is kind；When resonant frequency point selection is in 2 ωRFWhen, parasitic capacitance impedance is reduced to original 1/3, makes secondary caused by parasitic capacitance
Harmonic non-linear is reduced to minimum；From above analysis as can be seen that when resonance point is in different frequencies, the linearity or gain
Performance can reach good optimization in specific frequency；In this example, by selecting suitable inductance L1 so that source node together
Total parasitic capacitance resonant frequency at place is between radio frequency fundamental wave and radio frequency second harmonic, the conversion gain of this programme, noise, line
Property degree performance parameter can be improved.
The analogous diagram that the conversion gain of the frequency mixer of the utility model changes with local oscillation power is illustrated in figure 2, from figure
As can be seen that the conversion gain of the frequency mixer can reach more than 25.4dB.
The analogous diagram that the conversion gain of the frequency mixer of the utility model changes with output frequency is illustrated in figure 3, from figure
As can be seen that the conversion gain of the frequency mixer is 25.4dB.
The analogous diagram of the noise coefficient of the frequency mixer of the utility model is illustrated in figure 4, it can be seen from the figure that the mixing
The noise coefficient of device is 7.78dB.
The analogous diagram of the linearity of the frequency mixer of the utility model is illustrated in figure 5, it can be seen from the figure that the frequency mixer
The linearity be 26.04dBm.
The power consumption diagram of the frequency mixer of the utility model is illustrated in figure 6, it can be seen from the figure that the power consumption of the frequency mixer is
8mW。
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all in this practicality
Within new spirit and principle, any modifications, equivalent replacements and improvements are made should be included in the guarantor of the utility model
Within the scope of shield.
Claims (4)
1. the frequency mixer based on current multiplexing technology, it is characterised in that：Including transconductance stage circuit (1), switching stage circuit (2) and bear
Carry grade circuit (3)；The transconductance stage circuit (1), switching stage circuit (2) and load stage circuit (3) are sequentially connected；The transconductance stage
Circuit (1) uses current multiplexing structure and source degeneracy induction structure；
The transconductance stage circuit (1) is used to access radio frequency voltage signal, and radio frequency voltage signal is converted into current radio frequency signal, right
Current radio frequency signal carries out Reusability；
The switching stage circuit (2) controls what it was set for accessing local oscillation signal and current radio frequency signal, according to local oscillation signal
Multiple switch pipe turns in turn, is turned in turn using multiple switch pipe and modulation is switched over to current radio frequency signal, generates intermediate frequency
Current signal transfer is to load stage circuit (3)；
The load stage circuit (3) exports for current intermediate frequency signal to be converted into voltage signal；The transconductance stage circuit
(1) PMOS tube M1, PMOS tube M3, NMOS tube M2, NMOS tube M4, capacitance C1~capacitance C5 and inductance L1~inductance L4 are included；Institute
The positive terminal RF+ connections of the grid and radio frequency voltage signal of PMOS tube M1 are stated, source level is connected with supply voltage VDD；NMOS tube
The positive terminal RF+ connections of the grid and radio frequency voltage signal of M2, drain electrode are connected with the drain electrode of PMOS tube M1, and source level is through capacitance
C1 is connected with its grid；One end of the capacitance C2 is connected with the drain electrode of NMOS tube M2, and the source electrode of the other end and NMOS tube M2 connects
It connects；One end of the inductance L2 is connected with the source electrode of NMOS tube M2, and the other end is grounded through inductance L4；The capacitance C5 and inductance L4
It is in parallel；
The negative pole end RF- connections of the grid and radio frequency voltage signal of the PMOS tube M3, source level are connected with supply voltage VDD；
The positive terminal RF- connections of the grid and radio frequency voltage signal of NMOS tube M4, drain electrode are connected with the drain electrode of PMOS tube M3, source level
It is connected through capacitance C3 with its grid；One end of the capacitance C4 is connected with the drain electrode of NMOS tube M4, and the other end is with NMOS tube M4's
Source electrode connects；One end of inductance L3 is connected with the source electrode of NMOS tube M4, the other end respectively with inductance L2, inductance L4 and capacitance C5
Tie point connects；One end of the inductance L1 is connected with the drain electrode of NMOS tube M2, the drain electrode connection of other end NMOS tube M4.
2. the frequency mixer according to claim 1 based on current multiplexing technology, it is characterised in that：The switching stage circuit
(2) grid and local oscillation signal of NMOS tube M5, NMOS tube M6, NMOS tube M7 and NMOS tube M8, the NMOS tube M5 are being included just
Extreme LO+ connections, source level are connected with the drain electrode of NMOS tube M2, and drain electrode is connected with load stage circuit (3)；The NMOS tube M6
Grid and local oscillation signal negative pole end LO- connections, source level is connected with the source electrode of NMOS tube M5, and drain electrode is with NMOS tube M8's
Drain electrode connection；The negative pole end LO- connections of the grid and local oscillation signal of the NMOS tube M7, the drain electrode of source level and NMOS tube M4 connect
It connects, drain electrode is connected with the drain electrode of NMOS tube M5；The negative pole end LO+ connections of the grid and local oscillation signal of the NMOS tube M8,
Source level is connected with the drain electrode of NMOS tube M4, and drain electrode is connected with load stage circuit (3).
3. the frequency mixer according to claim 2 based on current multiplexing technology, it is characterised in that：The load stage circuit
(3) resistance R1, resistance R2 and capacitance C6 are included；One end of the resistance R1 is connected with the drain electrode of NMOS tube M5, the other end and electricity
Source voltage VDD connections；One end of the resistance R2 is connected with the drain electrode of NMOS tube M8, and the other end is connected with supply voltage VDD；Institute
The one end for stating capacitance C6 is connected with the drain electrode of NMOS tube M5, and the other end is connected with the drain electrode of NMOS tube M8.
4. the frequency mixer according to claim 3 based on current multiplexing technology, it is characterised in that：Further include electric current injection electricity
Road (4), the current injection circuit (4) include PMOS tube M9, PMOS tube M10 and PMOS tube M11, the grid of the PMOS tube M9
Connection is connected with DC offset voltage V0, and source electrode is connected with supply voltage VDD, and drain electrode is connected with the source electrode of PMOS tube M10；
The grid of the PMOS tube M10 is connected with the drain electrode of PMOS tube M11, and drain electrode is connected with the drain electrode of NMOS tube M2；The PMOS
The grid of pipe M11 is connected with the drain electrode of PMOS tube M10, and drain electrode is connected with the drain electrode of NMOS tube M4, source level and PMOS tube M10
Source level connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721641860.9U CN207410303U (en) | 2017-11-30 | 2017-11-30 | Frequency mixer based on current multiplexing technology |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721641860.9U CN207410303U (en) | 2017-11-30 | 2017-11-30 | Frequency mixer based on current multiplexing technology |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207410303U true CN207410303U (en) | 2018-05-25 |
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ID=62317248
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721641860.9U Expired - Fee Related CN207410303U (en) | 2017-11-30 | 2017-11-30 | Frequency mixer based on current multiplexing technology |
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| Country | Link |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107834980A (en) * | 2017-11-30 | 2018-03-23 | 广西师范大学 | Frequency mixer based on current multiplexing technology |
| CN110492850A (en) * | 2019-08-26 | 2019-11-22 | 许昌富奥星智能科技有限公司 | A kind of frequency mixer integrated circuit of high-gain, low noise |
| WO2020000616A1 (en) * | 2018-06-29 | 2020-01-02 | 樊璠 | Active mixer |
-
2017
- 2017-11-30 CN CN201721641860.9U patent/CN207410303U/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107834980A (en) * | 2017-11-30 | 2018-03-23 | 广西师范大学 | Frequency mixer based on current multiplexing technology |
| CN107834980B (en) * | 2017-11-30 | 2024-02-13 | 广西师范大学 | Mixer based on current multiplexing technology |
| WO2020000616A1 (en) * | 2018-06-29 | 2020-01-02 | 樊璠 | Active mixer |
| CN110492850A (en) * | 2019-08-26 | 2019-11-22 | 许昌富奥星智能科技有限公司 | A kind of frequency mixer integrated circuit of high-gain, low noise |
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