CN103457555B - Adopt the millimeter wave amplifier unilateralization network of arbitrarily coupling coefficient on-chip transformer - Google Patents
Adopt the millimeter wave amplifier unilateralization network of arbitrarily coupling coefficient on-chip transformer Download PDFInfo
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- CN103457555B CN103457555B CN201310414938.3A CN201310414938A CN103457555B CN 103457555 B CN103457555 B CN 103457555B CN 201310414938 A CN201310414938 A CN 201310414938A CN 103457555 B CN103457555 B CN 103457555B
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Abstract
The invention discloses the millimeter wave amplifier unilateralization network that a kind of use has the on-chip transformer of arbitrarily coupling coefficient, it comprises common source configuration amplifier (1), on-chip spiral transformer (2), the primary coil (21) of described transformer (2) and secondary coil (22) are connected on respectively the grid of described common source configuration amplifier (1) with in drain electrode, introduce voltage-current feedback, specific unidirectional condition is met by regulating the self-inductance value of secondary coil, grid-leakage the parasitic capacitance of transistor is balanced out with resonance, thus significantly improve the reverse isolation degree of common-source amplifier, solve traditional millimeter wave common-source amplifier high to transformer coupling coefficient requirement, the shortcoming of reverse isolation degree difference.
Description
Technical field
The present invention relates to a kind of millimeter wave amplifier unilateralization network, is that a kind of semiconductor integrated circuit technique making, use on-chip spiral transformer of adopting is to improve the circuit network structure of millimeter wave common-source amplifier reverse isolation degree specifically.
Background technology
The electric capacity of the parasitism between the parasitic capacitance of transistor internal, especially grid and drain electrode, can introduce parasitic reverse signal coupling path at tube interior, and the feedback network of this inside brings adverse influence usually can to the design of millimeter wave amplifier.Such as, when a design multistage common-source amplifier, when regulating the output matching network of every first stage amplifier, input impedance can be affected, and needs to redesign input matching network; After designing input matching network, the output impedance of transistor can change again, needs again conversely to redesign output matching network, thus affects the design of whole amplifier.In order to solve the bad problem of millimeter wave amplifier isolation, usually needing to use the amplifier of cascodes, to gather into folds use by the transistor of a common source configuration and the transistor of a common gate structure.But compared to common source configuration, cascodes needs the drain voltage of twice, be unfavorable for being applied in low supply voltage environment.In addition, the common gate structure transistor in cascodes usually can introduce extra noise, affects the noiseproof feature of whole amplifier.
Another method improving amplifier reverse isolation degree is by increasing extra circuit network in transistor periphery, resonance or balance out the parasitic capacitance of tube interior, thus improves reverse isolation degree.This method is usually called as amplifier unilateralization technology.Traditional unilateralization technology is mainly included on common-source amplifier and adds extra on-chip inductor and on-chip transformer etc.Connect extra inductance between transistor gate and drain electrode after, shunt-resonant circuit can be formed between inductance and transistor gate-drain capacitance, offset the impact of parasitic capacitance, improve reverse isolation.But this method usually needs the stray inductance using inductance value very large, need to take larger chip area.After using the unilateralization technology of on-chip transformer, the area comparing inductance domain can be effectively reduced.Traditional transformer unilateralization technology is the primary and secondary coil adding transformer between the drain electrode and source electrode of transistor, need use coupling coefficient close to 1 close coupling transformer.But at millimeter wave frequency band, realize coupling coefficient more difficult close to the close coupling on-chip transformer of 1, because usually more multiparasitization electric capacity can be introduced in transformer while increasing the primary and secondary coil coupling of transformer, thus reduce the self-resonant frequency of transformer.
Therefore, need to invent a kind of can use there is arbitrarily coupling coefficient on-chip transformer, be applied to millimeter wave amplifier unilateralization circuit network in low supply voltage common-source amplifier structure simultaneously.
Summary of the invention
Goal of the invention: the object of the invention is to design a kind of can use there is arbitrarily coupling coefficient on-chip transformer, be applied to millimeter wave amplifier unilateralization circuit network in low supply voltage common-source amplifier structure simultaneously.
The present invention adopts following technical scheme:
Use a millimeter wave amplifier unilateralization network for on-chip transformer, it comprises common source configuration amplifier, on-chip spiral transformer.On-chip spiral transformer is connected between the grid of common source configuration amplifier and drain electrode.Wherein, the secondary coil induced voltage of transformer, by transformer coupled in primary coil, then feeds back on grid, the structure of coating-forming voltage-Current Negative Three-Point Capacitance in the form of electric current.Suppose that the turn ratio of the primary and secondary coil of transformer is n, the coupling coefficient of transformer is k, and the gate-drain parasitic capacitances value of transistor is C
gd, the self-inductance value of secondary coil is L
sc, ω is the angular frequency of amplifier operation frequency range, when these parameters meet following relational expression:
Common-source amplifier can be made in this frequency range to meet unidirectional condition, the gate-drain parasitic capacitances of resonance offseting transistor, significantly improve the reverse isolation degree of transistor.As can be seen from above-mentioned formula, the coupling coefficient of this unilateralization network to on-chip transformer has no particular limits, and can use arbitrary coupling coefficient, be suitable for use on millimeter wave frequency band.If need the working frequency range changing amplifier, only need to change the self-inductance value of transformer secondary coil or the turn ratio of primary and secondary coil.
The present invention has the following advantages:
1) the reverse isolation degree of millimeter wave common-source amplifier is significantly improved.
2) special requirement be there is no to on-chip transformer, the on-chip spiral transformer of arbitrarily coupling coefficient can be selected.
3) application scenario of low supply voltage millimeter wave amplifier is suitable for.
Accompanying drawing explanation
Fig. 1 is the basic structure schematic diagram of the millimeter wave amplifier unilateralization network using arbitrarily coupling coefficient on-chip transformer in the present invention;
The present invention is applied in the circuit theory diagrams in a Q-band millimeter wave common-source amplifier by Fig. 2;
The present invention is applied in the on-chip transformer structural representation in a Q-band millimeter wave common-source amplifier by Fig. 3;
Fig. 4 is reverse isolation degree test result the present invention being applied in amplifier after a Q-band millimeter wave common-source amplifier;
Fig. 5 is the gain, the input and output standing wave S parameter test result that the present invention are applied in amplifier after a Q-band millimeter wave common-source amplifier.
Embodiment
Below in conjunction with accompanying drawing the present invention done and further explain.
As shown in Figure 1, basic structure of the present invention is a kind of millimeter wave amplifier unilateralization network using on-chip transformer, and it comprises common source configuration amplifier 1, on-chip spiral transformer 2.On-chip spiral transformer 2 is connected between the grid of common source configuration amplifier 1 and drain electrode.Wherein, the secondary coil 22 induced drain voltage of transformer, by transformer coupled in primary coil 21, then feeds back on grid, the structure of coating-forming voltage-Current Negative Three-Point Capacitance in the form of electric current.
The present invention is applied in the circuit theory diagrams in a Q-band millimeter wave common-source amplifier by Fig. 2.As shown in the figure, this amplifier first order 3 adopts the degenerative structure of source electrode perception; The unilateralization network of the use arbitrarily coupling coefficient transformer that the second level 4 and the third level 5 adopt the present invention to propose.In figure, drain power voltage is 1.2V, and gate bias voltage is 0.7V.
The present invention is applied in the on-chip transformer structural representation in a Q-band millimeter wave common-source amplifier by Fig. 3.Wherein one end 6 of the primary coil of transformer connects the gate bias voltage of transistor, and the other end 8 of primary coil connects the grid of transistor.One end 7 of the secondary coil of transformer connects the drain power voltage of transistor, and the other end 9 of secondary coil connects the drain electrode of transistor
Fig. 4 is the reverse isolation degree test result after the present invention being applied in a Q-band millimeter wave common-source amplifier.As can be seen from the figure, when not using unilateralization network, reverse isolation degree is within 26dB, and after the unilateralization network using the present invention to propose, reverse isolation degree can be improved to more than 40dB.
Fig. 5 is gain after the present invention being applied in a Q-band millimeter wave common-source amplifier, input and output standing wave S parameter test result.As can be seen from the figure, the maximum gain (S21 result) that this amplifier reaches when frequency is 46GHz is 18.3dB, and input standing wave (S11 result), below-5dB, exports standing wave (S22 result) below-10dB.
The present invention and the Q-band millimeter wave common-source amplifier be applied in thereof all adopt silicon-based complementary metal oxide semiconductor integrated circuit technology to realize.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.
Claims (3)
1. a use has the millimeter wave amplifier unilateralization network of the on-chip transformer of arbitrarily coupling coefficient, it is characterized in that, described millimeter wave amplifier unilateralization network comprises common source configuration amplifier (1), on-chip spiral transformer (2), and described on-chip spiral transformer (2) comprises primary coil (21) and secondary coil (22), the primary coil (21) of on-chip spiral transformer (2) and secondary coil (22) are connected to the grid of common source configuration amplifier (1) with in drain electrode, described secondary coil (22) induced drain voltage, be coupled in primary coil (21) by described on-chip spiral transformer (2), feed back in the form of electric current again on grid, the structure of coating-forming voltage-Current Negative Three-Point Capacitance, by regulating the self-inductance value of described secondary coil (22), and with the turn ratio of transformer primary and secondary coil, the coupling coefficient of transformer and the gate-drain parasitic capacitances value of transistor combine, thus formation unidirectional condition, wherein, described on-chip spiral transformer (2) can use arbitrary coupling coefficient, described unidirectional condition is:
Wherein, L
scfor the self-inductance value of secondary coil, n is the turn ratio of the primary and secondary coil of transformer, and k is the coupling coefficient of transformer, C
gdfor the gate-drain parasitic capacitances value of transistor, ω is the angular frequency of amplifier operation frequency range.
2. millimeter wave amplifier unilateralization network according to claim 1, it is characterized in that, if need the working frequency range changing described common source configuration amplifier (1), only need the self-inductance value of secondary coil (22) or the turn ratio of primary and secondary coil that change described on-chip spiral transformer (2).
3. the millimeter wave amplifier unilateralization network according to claim 1 to 2 any one, is characterized in that, described common source configuration amplifier (1) adopts silicon-based complementary metal oxide semiconductor integrated circuit technology to realize.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103684275B (en) * | 2013-12-31 | 2016-08-31 | 电子科技大学 | Low-noise amplifier based on noise cancellation structure |
| US9853614B2 (en) * | 2014-12-04 | 2017-12-26 | Qualcomm Incorporated | Amplifier with triple-coupled inductors |
| US10171112B2 (en) * | 2016-03-24 | 2019-01-01 | Qualcomm Incorporated | RF multiplexer with integrated directional couplers |
| CN107592079B (en) * | 2017-08-25 | 2021-03-09 | 加特兰微电子科技(上海)有限公司 | Differential amplifier circuit |
| CN111106823B (en) * | 2019-11-27 | 2023-04-11 | 杭州电子科技大学 | Millimeter wave on-off keying modulator with high isolation and stable input matching |
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| CN102104362A (en) * | 2011-03-01 | 2011-06-22 | 北京大学 | Millimeter-wave frequency multiplier and cascaded frequency multipliers |
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| CN102104362A (en) * | 2011-03-01 | 2011-06-22 | 北京大学 | Millimeter-wave frequency multiplier and cascaded frequency multipliers |
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