CN202796935U - Double-iron-electrode rectification chip - Google Patents
Double-iron-electrode rectification chip Download PDFInfo
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- CN202796935U CN202796935U CN 201220326000 CN201220326000U CN202796935U CN 202796935 U CN202796935 U CN 202796935U CN 201220326000 CN201220326000 CN 201220326000 CN 201220326000 U CN201220326000 U CN 201220326000U CN 202796935 U CN202796935 U CN 202796935U
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Abstract
The utility model relates to the structural design of double-iron-electrode rectification chip products and is characterized in that the product entity of a rectification chip is composed of a rectification silicon chip, a large-diameter electrode, a small-diameter electrode, brazing sheets and insulating protection cement. The rectification silicon chip is internally provided with a PN junction. Products provided with the above double-iron-electrode rectification chip has the following characteristics: (1) the internal stress of products is reduced and the reliability of the product quality is improved; (2) the production scale is enlarged and the production cost is reduced, due to the reason that the vacuum sintering or nitrogen-filling type sintering process is performed by means of a sintering mold; (3) the appearance size of products is standardized to facilitate the subsequent automatic packaging process by utilizing pasters and the like, so as to realize the packaging automation.
Description
Technical field
The utility model relates to a kind of pair of iron rectification chip product structure design, belongs to power electronics chip-Size semiconductor technical field.
Background technology
Rectifier tube chip is the base unit product of electronic devices and components, is widely used in the fields such as unsteady flow, metallurgy, automobile, generating, automation control and household electrical appliance, and market demand is very large.Have the industry survey data to show, rated current is the rectifier tube chip of 5-100A, and China's year volume of production and marketing is about 1,000,000,000 at present.Along with popularizing of expanding economy and automation, market demand is also increasing progressively in the speed with every year about 10%.
The structure of tradition 5-100A rectification chip electrode, take so-called " single ferroelectric utmost point " as main, a slice had rectification characteristic and thin silicon sheet and the slightly large tagger of a slice Area Ratio silicon chip of two-sided nickel dam are arranged, be combined, immerse in the slicker solder stove, just formed the agent structure of product after taking-up is solidified: the major diameter electrode is the iron plate that is wrapped in slicker solder, and another minor diameter electrode then is the slicker solder layer of piling up on the silicon chip.After the techniques such as acid corrosion cleaning, upper insulation protection glue, make product again.Above-mentioned product structure pattern, the sector have been used nearly two more than ten years.This product structure pattern exists following weak point:
1, dipping slicker solder technique is all finished by hand, and the product design size fluctuation of producing is very large, and diameter error is greater than 10%, and thickness error is greater than 50%.So that rear road user also can only adopt the method for manual welding to assemble this product, can not adopt advanced paster technique to realize the automation assembling.
2, the minor diameter electrode of product is the slicker solder material, and its thermal coefficient of expansion is 29.3 approximately; Major diameter electrode electrode is iron material, and its thermal coefficient of expansion is 12.2 approximately; The Coefficient of Thermal Expansion value of the two differs about 2.4 times.Rectification chip belongs to power product, and temperature rise changes up to 150 degree when electric current of make-and-break, and two electrodes increase the withstand voltage decline of product, electric leakage because the stress that the thermal coefficient of expansion difference will cause can cause the wherein warpage of silicon chip, can cause damage of product when serious.
Above-mentioned binomial shortcoming can by improving the structural design of product, be solved.
Summary of the invention
The utility model changes traditional " single ferroelectric utmost point " structure into " two ferroelectric utmost point " structure, can solve 2 above-mentioned deficiencies.
The utility model relates to the product structure design of a kind of pair of iron rectification chip, it is characterized in that: described rectification chip adopts inner rectification silicon chip (1), major diameter electrode (2), minor diameter electrode (3), soldering lug (4), insulation protection glue (5) with a PN junction jointly to form product entity.Its appearance structure can be referring to Figure of description.
The external form of two iron rectification chips is oblate bar shape, and its outside dimension is 4.4～9.5 millimeters ± 0.1 millimeter, the D1 shown in Figure of description.Thickness is 1.4～2.1 millimeters ± 0.1 millimeter, the H1 shown in Figure of description.The used rectification silicon chip of rectification chip (1) architectural feature is, base resistance rate 5～50 ohmcms, thickness 180-310 micron, silicon chip inside has the PN junction that diffusion technology forms, its P type and N-type near surperficial 20 microns parts, form respectively P+ and the N+ type impurity of high concentration with diffusion technology, in order to lowering on-state voltage drop, the surface of silicon chip, plating scribbles the metal nickel dam, forms good ohmic contact with favourable with brazing layer.
What the above rectification silicon chip base resistivity was selected 5～50 ohmcms according to a tree name is, the relational expression of and silicon chip resistivity withstand voltage about rectifier tube chip according to General Electric Apparatus Co.(U.S.A.): withstand voltage=94x resistivity (0.75 power), resistivity is that the silicon chip of 5～50 ohmcms can produce 300～1800 volts of reverse withstand voltage rectification chips, can satisfy at present the market of rectifier tube chip 95% both at home and abroad.
The above rectification silicon wafer thickness select 180～310 microns according to a tree name be, the relational expression of depletion width and resistivity in the root a tree name rectifier tube chip: depletion width=4.95x resistivity (0.875 power), resistivity is the silicon chip of 5～50 ohmcms, its corresponding depletion width is 20～150 microns, add 160 microns of P and n type diffused layer gross thickness, so the silicon chip gross thickness is elected 180～310 microns as.
The above rectification silicon chip, its outward flange shape can be circular, can be regular hexagon, also can be square, choose which kind of shape in the production, depend primarily on the requirement of withstand voltage of product, wherein, the withstand voltage regular hexagon that is better than of circular configuration, and the withstand voltage square that is better than of regular hexagon structure.The plane geometry dimension size of various shape silicon chips must be determined according to the forward current rating of product aborning, and its principle is, every square millimeter of silicon chip can safety 1.5 amperes forward current rating.
The used major diameter electrode of rectification chip (2) is characterized in that: material is irony, and its outside dimension is 4.4～9.5 millimeters ± 0.1 millimeter, the D1 shown in Figure of description.Thickness is 0.4～0.75 millimeter ± 0.1 millimeter, the H1 shown in Figure of description.
The used minor diameter electrode of rectification chip (3) is characterized in that: material is irony, and its outside dimension is 2.2～8.3 millimeters ± 0.1 millimeter, the D2 shown in Figure of description.Thickness is 0.4～0.75 millimeter ± 0.1 millimeter, and concrete gauge is identical with the major diameter electrode.
The used soldering lug of rectification chip (4) is characterized in that: each product has two, is shaped as disk.The effect of soldering lug is to connect silicon chip and two ferroelectric utmost point, making current and derivation heat.Should consider to select and be stained with the metal or alloy that the profit ability is good, plastic deformation is large, can be terne metal sheet or unleaded weld tabs among the present invention, also can be aluminium flake or sial sheet.Its diameter is identical with major diameter electrode, minor diameter electrode respectively.Selecting of the thickness of brazing layer is to consider that namely soldering is stained with the full needs of profit, prevents again soldering flux surplus drippage and two electric pole short circuits that occur are unexpected.Through repetition test, determine that thickness is the 30-60 micron.
Description of drawings
Accompanying drawing is product profile of the present utility model.
Among the figure, (1) is the silicon chip with rectification characteristic, and (2) are the major diameter electrodes, and (3) are the minor diameter electrodes, and (4) are soldering lugs, and (5) are insulation protection glue.(D1) being the external diameter of product, also is the diameter of major diameter electrode; (D2) be the diameter of minor diameter electrode; (H1) be the gross thickness of product; (H2) be the thickness of major diameter electrode, the thickness of minor diameter electrode is identical with this value.
Embodiment
The utility model belongs to the semiconductor fabrication category, below narrates its concrete effectively execution mode by the precedence of technological process:
1, some material accessories all adopt cooperation part to buy.As: by the surface with rectification characteristic of resistivity, thickness, diffusion junction depth and the concentration set the round silicon chip of nickel coating, diameter is 3 inches or 4 inches; Set two iron circle electrodes of thickness and diameter; Set the soldering disk of thickness and diameter.
2, use the wire cutting machine cutting technique, perhaps use whirl coating, photoetching, sour cutting technique, the great circle silicon chip is cut into set circle or regular hexagon or the foursquare chip that requires.
3, silicon chip, soldering lug, two ferroelectric utmost point by specification structural order shown in the drawings are overlapped and place, the major diameter electrode (2) of in sintering mold, packing into first, pack into successively again soldering lug (4), rectification silicon chip (1), another soldering lug (4), the minor diameter electrode (3) of packing at last, push in the sintering furnace, use vacuum or fill the nitrogen sintering process, sinter accurate product entity into.The structure of product change into two ferroelectric extremely after, can use vacuum or fill the nitrogen sintering process, this manufacturing link enters production status in enormous quantities, semi-automatic, the outline dimension standard of finished product, production cost decrease.
4, with hydrofluoric acid, nitric acid, glacial acetic acid, sulfuric acid hybrid corrosion liquid, the silicon chip edge of the accurate product of corrosion removal is removed the injured layer of machinery and pollutant, behind the cleaning, drying, is coated with mould at silicon chip edge immediately and applies insulation protection glue (5).
5, deposit product in baking oven, progressively be raised to high temperature from low temperature, until rated junction temperature, aging certain hour is in order to passivation silicon chip table top and heavy insulation protection glue, stable prod electrical characteristics.
6, every electrical characteristics data of measurement products are rejected defective products.
In sum, the product of two iron rectification chips has following characteristics: the internal stress that (1) has reduced product, improved product quality reliability; (2) can adopt sintering mold to implement vacuum or fill the nitrogen sintering process, production lot increases, and production cost reduces; (3) product design dimensional standard is conducive to later process and adopts the automatic packaging techniques such as paster, realizes the encapsulation automation.
Specification is finished.
Claims (5)
1. two iron rectification chip; its architectural feature is: described rectification chip adopts inner rectification silicon chip (1), major diameter electrode (2), minor diameter electrode (3), soldering lug (4), insulation protection glue (5) with a PN junction jointly to form product entity; its outside dimension is 4.4～9.5 millimeters ± 0.1 millimeter, and thickness is 1.4～2.1 millimeters ± 0.1 millimeter.
2. rectification chip according to claim 1, it is characterized in that: the base resistance rate of rectification silicon chip (1) is 5～50 ohmcms, and thickness is 180～310 microns, and its outward flange shape can be circle, regular hexagon, square.
3. rectification chip according to claim 1, it is characterized in that: major diameter electrode (2) material is irony, and its outside dimension is 4.4～9.5 millimeters ± 0.1 millimeter, and thickness is 0.4～0.75 millimeter ± 0.1 millimeter.
4. rectification chip according to claim 1, it is characterized in that: minor diameter electrode (3) material is irony, and its outside dimension is 2.2～8.3 millimeters ± 0.1 millimeter, and thickness is 0.4～0.75 millimeter ± 0.1 millimeter.
5. rectification chip according to claim 1, it is characterized in that: soldering lug (4), each product has two, be shaped as disk, material can be terne metal sheet or unleaded weld tabs, also can be aluminium flake or sial sheet, its diameter is identical with major diameter electrode, minor diameter electrode respectively, and thickness is 30～60 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220326000 CN202796935U (en) | 2012-06-26 | 2012-06-26 | Double-iron-electrode rectification chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220326000 CN202796935U (en) | 2012-06-26 | 2012-06-26 | Double-iron-electrode rectification chip |
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| Publication Number | Publication Date |
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| CN202796935U true CN202796935U (en) | 2013-03-13 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN 201220326000 Expired - Fee Related CN202796935U (en) | 2012-06-26 | 2012-06-26 | Double-iron-electrode rectification chip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103624349A (en) * | 2013-09-02 | 2014-03-12 | 黄山市恒悦电子有限公司 | Wire electrical discharge machining method for silicon wafers without surface metal coating |
-
2012
- 2012-06-26 CN CN 201220326000 patent/CN202796935U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103624349A (en) * | 2013-09-02 | 2014-03-12 | 黄山市恒悦电子有限公司 | Wire electrical discharge machining method for silicon wafers without surface metal coating |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20190626 |