CN102637747A - Double-copper-electrode rectifying tube chip made of coated environment-friendly material, and coating process - Google Patents
Double-copper-electrode rectifying tube chip made of coated environment-friendly material, and coating process Download PDFInfo
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- CN102637747A CN102637747A CN201210105760XA CN201210105760A CN102637747A CN 102637747 A CN102637747 A CN 102637747A CN 201210105760X A CN201210105760X A CN 201210105760XA CN 201210105760 A CN201210105760 A CN 201210105760A CN 102637747 A CN102637747 A CN 102637747A
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Abstract
The invention relates to a process structure with a double-copper-electrode rectifying tube chip coated made of a coated environment-friendly material. Rectifying tube chip products about multiple contradictions, such as the quality, the cost, the resource consumption and the environment protection, can be well coordinated. The process structure has the advantages of low production cost of the conventional lead-surface process structure product and high electrothermal performance of a silver-coated double-copper-electrode product, is environment-friendly during production, does not waste noble metal and is a great technical innovation during production of the rectifying tube chip home and abroad within recent 20 years. A solid structure of the product consists of a silicon slice (1) with a rectification characteristic, a brazing layer (2), copper electrodes (3), a coated environment-friendly material layer (4) and insulative protection rubber (5).
Description
Technical field
The present invention relates to the process structure design that a kind of plating is coated with the two copper electrode rectifier tube chip of environment-friendly materials, belong to semiconductor fabrication.
Background technology
Rectifier tube chip is the base unit product of electronic devices and components, is widely used in fields such as unsteady flow, metallurgy, automobile, generating, automation control and household electrical appliance, and market demand is very big.Have the industry survey data to show, rated current is the rectifier tube chip of 3～100A, and China's year volume of production and marketing is about 1,000,000,000 at present.Along with popularizing of expanding economy and automation, market demand is also increasing progressively in the speed with every year about 10%.
Since the last century the nineties, the technology of producing rectifier tube chip improves through repeatedly improving, and is tending towards ripe basically.Yet, further improve the quality of product, reduce production cost of products, reduce resource, energy resource consumption and the environmental pollution of unit product, be still invariable scientific and technological theme.
The process structure of the rectifier tube chip of bipolar electrode is arranged on the market now, mainly contains two kinds of forms, its advantage and deficiency are all arranged, analyze as follows:
1, traditional plumbous face process structure
(account for domestic market share 65%).Its design feature is: the middle silicon chip that partly adopts with rectification characteristic, and the ferrous metal or the kovar alloy electrode of slicker solder parcel adopted on two limits, utilizes brazing layer that silicon chip and electrode are welded together, and the insulating cement protection is adopted in its marginal portion.The advantage of this structure is: the technology cost is lower.Shortcoming is: because the conduction and the heat conductivility of ferrous metal or kovar alloy are very poor, influenced the conduction and the thermal conduction characteristic of product; More because it must wrap up with slicker solder, and the prescription ratio of slicker solder is 95: 5, a large amount of heavy metal leads exposes at product surface, and environment is brought great pollution hidden trouble.2004, European Union has just carried out envelope to the electronic product that contains six kinds of environmental pollutants closed, and in six kinds of pollutants, heavy metal lead comes in third, and this also is China's rectifier tube chip main cause of being difficult to export so far.In recent years, because repeatedly serious environmental is polluted the blood lead accident, China has strengthened renovation dynamics to relating to plumbous product and relating to plumbous industry, and the product of this process structure is closed down category when belonging to.
2, silver-plated two copper electrode process structures
(account for domestic market share 35%).Its design feature is: the middle silicon chip that partly adopts with rectification characteristic, and two-sided silver-plated two copper electrode is adopted on two limits, utilizes brazing layer that silicon chip and electrode are welded together, and the insulating cement protection is adopted in its marginal portion.The advantage of this structure is: the product electrical and thermal conductivity performance is good.Shortcoming is: owing to used noble metal silver to be the plating coating of copper electrode, cause the technology cost very high, the production cost of equal rated current specification exceeds 40% than traditional handicraft product; If amount is all used argent in hundred million product,, be unfavorable for human sustainable development with the significant wastage scarce resource; When plating was coated with silver layer, more use cyanide belonged to severe toxicity, administers difficulty, and environment is had severe contamination.This process structure does not have the improvement of matter so far after last century end is imported the continent into from Taiwan.Owing to the cost reason, the market share that accounts in the continent is less, but because the compliance with environmental protection requirements of finished product own becomes first-selected product in American-European market.
To sum up state, more than two kinds of product process structures its major defect is all arranged, how to get the length of the two, mend both sides' weak point, develop a kind of product technology and structure that meets China's actual conditions, be the sector expectation for many years.
Summary of the invention
In order to solve the rectifier tube chip product about many contradictions such as quality, cost, resource consumption, environmental protection; The present invention proposes the process structure that uses plating to be coated with the two copper electrode rectifier tube chip of environment-friendly materials, can make above-mentioned contradiction obtain good united and coordinating.This process structure had both possessed the low production cost of traditional plumbous face process structure product; Have the good electric hot property of silver-plated two copper electrode products again concurrently; And non-environmental-pollution in production; Do not consume precious metal, can be described as a significant technology innovation in the domestic and international rectifier tube chip production of recent two decades.
The entity structure of product is coated with environment-friendly materials layer (4), insulation protection glue (5) formation with reference to Figure of description 1 by the silicon chip with rectification characteristic (1), brazing layer (2), copper electrode (3), plating.
The silicon chip architectural feature of rectification chip is base resistance rate 5～50 ohmcms, 180～310 microns of thickness; Silicon chip inside has the PN junction that diffusion technology forms, its P type and N type near the 20 microns parts in surface, respectively with the P+ and the N+ type impurity of diffusion technology formation high concentration; In order to lowering on-state voltage drop; The surface of silicon chip, plating scribbles the metal nickel dam, forms good Ohmic contact with favourable with brazing layer.
What the above silicon chip base resistivity was selected 5～50 ohmcms according to a tree name is; The relational expression of and silicon chip resistivity withstand voltage about rectifier tube chip: withstand voltage=94x resistivity (0.75 power) according to General Electric Apparatus Co.(U.S.A.); Resistivity is that the silicon chip of 5～50 ohmcms can produce 300～1800 volts of reverse withstand voltage rectification chips, can satisfy at present the market of rectifier tube chip 95% both at home and abroad.
The above silicon wafer thickness select 180～310 microns according to a tree name be; The relational expression of depletion width and resistivity in the root a tree name rectifier tube chip: depletion width=4.95x resistivity (0.875 power); Resistivity is the silicon chip of 5～50 ohmcms; Its corresponding depletion width is 20～150 microns, adds 160 microns of P and n type diffused layer gross thickness, so the silicon chip gross thickness is elected 180～310 microns as.
The above silicon chip, its outward flange shape can be a garden shape, can be regular hexagon, also can be square.Choose which kind of shape in the production, depend primarily on the requirement of withstand voltage of product, wherein, the withstand voltage regular hexagon that is superior to of garden shape structure, and the withstand voltage square that is superior to of regular hexagon structure.The plane geometry dimension size of different shape silicon chip must be confirmed according to the forward current rating of product aborning, and its principle is that every square millimeter of silicon chip can pass through 1.5 amperes forward current rating safely.Consider that the forward current rating of two copper electrode rectifier tube chip all concentrates on 3～100 amperes of scopes both at home and abroad, so the plane biggest size of element of the different shape silicon chip that the present invention selects for use is the 3-9 millimeter.
The brazing layer of product has two layers, is shaped as garden sheet shape, and its diameter is identical with two copper upper and lower two plate electrodes respectively, is the 4.5-8.5 millimeter.The effect of brazing layer is to connect silicon chip and two copper electrodes, making current and derivation heat.Considered is selected for use and is stained with the metal or alloy that the profit ability is good, plastic deformation is big, can use the terne metal sheet among the present invention, also can be with aluminium flake or sial sheet.Selecting for use of the thickness of brazing layer is to consider that promptly soldering is stained with the full needs of profit, prevents soldering flux surplus drippage again and two electric pole short circuits that take place are unexpected.Through repetition test, confirm that thickness is the 30-60 micron.
The two copper electrode that product uses, it is shaped as garden sheet shape, and each a slice of top electrode and bottom electrode is arranged, and the top electrode diameter is slightly less than the bottom electrode diameter, and such diameter design helps pouring into insulation protection glue and user and recognizes electric polarity.As aforementioned, various rated current Different products have different diameter seriess, and for the garden silicon chip, the top electrode somewhat larger in diameter is the silicon chip diameter in the garden; For positive hexagonal or square silicon chip, the top electrode somewhat larger in diameter is line length in the diagonal angle of silicon chip.Among the present invention, the diameter range of two electrodes is the 4.5-9.5 millimeter.Electrode material is an oxygen-free copper, and because of it has good electrical and thermal conductivity performance, and resistance to corrosion is strong.Bipolar electrode selects for use top electrode slightly thicker than bottom electrode, and the thickness range of two electrodes is the 0.5-1 millimeter.
One of core technology of the present invention is the improvement invention of product structure.Outer surface plating at product is coated with environment-friendly materials.The selection principle that plating is coated with material is:
(1) can not contain heavy metals such as lead, chromium, mercury.
(2) can not contain carcinogenic type organic and radioelement.
(3) weldability and non-oxidizability are arranged.
(4) cheap.
(5) not rare, valuable, the nearly exhausted material of resource.
Plating according to the invention is coated with the environment-friendly materials layer, and what select for use can be the tin metal layer, also can be nickel metal layer, can also be titanium bazar metal layer.Said material respectively has its characteristics, respectively like table 1:
Table 1
| The environment-friendly materials layer | Advantage | Shortcoming |
| The tin metal layer | Cheap, weldability is good | Non-oxidizability is slightly poor |
| Nickel metal layer | Non-oxidizability is better, and price is lower | Weldability is slightly poor |
| Titanium bazar metal layer | Good combination property | Price is expensive partially |
In the actual production, according to the purposes of product, requirement of client etc., the highest material of optional price ratio is coated with environment-friendly materials as plating as far as possible.
Shown in Figure of description 1, plating is coated with the single outer surface that the environment-friendly materials layer is only limited to two copper electrodes, is coated with material 50% so structure of the present invention has just been practiced thrift plating than two-sided all silver-plated structure theoretically.In addition; Because the technological innovation measure of the present invention that following joint will be explained, choosing of plating coating thickness only need consider that the weldability and the non-oxidizability of two copper electrode surfaces gets final product; And need not consider its corrosion resistance in product processes, so plating be coated with thickness can be thinner.The improvement of the above two structural factor can be saved about 65% plating and is coated with material, has reduced the production cost significantly.Confirm that from the sample of having produced as a trial the thickness that plating is coated with environment-friendly materials is the 3-8 micron, can satisfy needing of product manufacturing.
Two of core technology of the present invention is improvement inventions of product process flow.Now the process characteristic comparison of two copper electrode products that existing silver-plated two copper electrode products on the market and plating of the present invention is coated with environment-friendly materials is like table 2:
Table 2
Know by last table; The key improvements of technological process of the present invention is that soldering becomes accurate product (promptly to form the product entity shape, but also be not finished product with silicon chip with the naked copper electrode earlier; Also need the abbreviation at line products of PROCESS FOR TREATMENT), plating is coated with environment-friendly materials after the burn into gluing.Like this, the two-sided electrosilvering of electrode has just made the single face plating environment-friendly materials of electrode into, has practiced thrift plating and has been coated with material; To damage the chemical etching technology of damage to electrode surface, by after former technology silver-plated, the plating that has moved on to technology of the present invention is coated with before the environment-friendly materials, has not only protected electrode surface, has also further saved plating and has been coated with material.
Three of core technology of the present invention is to have invented the technology of coating the environment-friendly materials layer in the plating of the surface of product.The present invention has two kinds of processes:
(1) uses electroplating process
Through oversintering, corrode, went up the accurate product of insulation protection glue; After preliminary treatment, put into the electroplating device that contains the additional conductive object and carry out barrel plating, coat the environment-friendly materials layer with plating; Current density is selected 6-10A/KG for use, and the electrodeposit liquid temp is controlled at the 40-60 degree, and electroplating time is 80-120 minute.
(2) use evaporation process method
Through oversintering, corrode, went up the accurate product of insulation protection glue; After preliminary treatment; Put into the evaporation equipment of high vacuum, with process environment-friendly materials layer in coating by vaporization on the surface of rectifier tube chip of evaporation, the time of evaporation selected for use 5～15 minutes; The burning infiltration temperature of evaporation back substrate is controlled at 200～280 degree, and the burning infiltration time is 10～20 minutes.Because surface that at every turn can only a direction of coating by vaporization, each product must evaporation two times.
Different environment-friendly materials all can use above-mentioned two kinds of technologies to plate respectively and be coated with, but after test, recommend the selection process such as the table 3 of use:
Table 3
| Environment-friendly materials | Electroplating technology | Evaporation technology |
| Tin metal | Preferably | ? |
| The nickel metal | Preferably | ? |
| The titanium bazar metal | ? | Preferably |
Description of drawings
Fig. 1 is a product profile of the present invention.
Among Fig. 1, (1) is the silicon chip with rectification characteristic, and every product contains a slice; (2) be brazing layer, every product contains two layers; (3) be copper electrode, every product contains two; (4) be that plating is coated with the environment-friendly materials layer, every product contains two superficial layers; (5) be insulation protection glue, every product contains a garden ring bodies.
Embodiment
The invention belongs to the semiconductor fabrication category, below narrate its concrete useful embodiment by the precedence of technological process:
1, some material accessories all adopt the cooperation part formula to buy.As: by the resistivity of setting, the thickness of setting, the surface with rectification characteristic of setting diffusion junction depth and concentration is the garden silicon chip of nickel coating, and its diameter can be 3 inches or 4 inches; Set the oxygen-free copper garden electrode of thickness and diameter; Set the soldering garden sheet of thickness and diameter.
2, use wire cutting machine, silicon chip is cut into set the garden shape that requires, or regular hexagon, or foursquare monolithic chip.
3, the structural order shown in silicon chip, soldering lug, the copper electrode by specification accompanying drawing 1 is overlapped placement, the sintering mold of packing into pushes vacuum sintering furnace, sinters accurate product entity into.
4, with hydrofluoric acid, nitric acid, glacial acetic acid, sulfuric acid hybrid corrosion liquid, the silicon chip vertical edge of the accurate product of corrosion removal is removed injured layer of machinery and pollutant, and forms certain appearance on the surface.Behind the cleaning, drying, be coated with mould at silicon chip edge immediately and apply the insulating cement protection.
5, to through pretreated accurate product, implement plating and be coated with environment-friendly materials.
6, deposit product in baking oven, progressively be raised to high temperature from low temperature, until rated junction temperature, aging certain hour is in order to passivation silicon chip table top and heavy insulation protection glue, stable prod electrical characteristics.
7, each item electrical characteristics data of measurement products are rejected defective products.
Specification is finished.
Claims (7)
1. a plating is coated with the two copper electrode rectifier tube chip of environment-friendly materials, it is characterized in that: said chip by the silicon chip with rectification characteristic (1), brazing layer (2), copper electrode (3), plating be coated with environment-friendly materials layer (4), insulation protection glue (5) constitutes.
2. the silicon chip of rectifier tube chip according to claim 1, it is characterized in that: said silicon chip, thickness are 180～310 microns; Its outward flange shape can be a garden shape; Can be regular hexagon, also can be square, and the plane biggest size of element of different shape silicon chip is the 3-9 millimeter.
3. the brazing layer of rectifier tube chip according to claim 1 is characterized in that: said brazing layer, there are two layers, and be shaped as garden sheet shape, its diameter is identical with two copper upper and lower two plate electrodes respectively, is the 4.5-8.5 millimeter.
4. the copper electrode of rectifier tube chip according to claim 1; It is characterized in that: said copper electrode, it is shaped as garden sheet shape, and each a slice of top electrode and bottom electrode is arranged; The top electrode diameter is slightly less than the bottom electrode diameter; The diameter range of two electrodes is the 4.5-9.5 millimeter, and electrode material is an oxygen-free copper, and thickness range is the 0.5-1 millimeter.
5. the plating of rectifier tube chip according to claim 1 is coated with the environment-friendly materials layer, it is characterized in that: said plating is coated with the environment-friendly materials layer, can be the tin metal layer, also can be nickel metal layer, can also be titanium bazar metal layer, and thickness is the 3-8 micron.
6. rectifier tube chip according to claim 1, the key improvements of its technological process is that soldering becomes accurate product with silicon chip with the naked copper electrode earlier, plating is coated with environment-friendly materials after the burn into gluing.
7. plating according to claim 5 is coated with the environment-friendly materials layer, and the present invention has two kinds of processes:
(1) use electroplating process, through oversintering, corrosion; Went up the accurate product of insulation protection glue, and after preliminary treatment, put into the electroplating device that contains the additional conductive object and carry out barrel plating; Coat the environment-friendly materials layer with plating; Current density is selected 6-10A/KG for use, and the electrodeposit liquid temp is controlled at the 40-60 degree, and electroplating time is 80-120 minute
(2) use evaporation process method, through oversintering, corrosion; Go up the accurate product of insulation protection glue, after preliminary treatment, put into the evaporation equipment of high vacuum; With process environment-friendly materials layer in coating by vaporization on the surface of rectifier tube chip of evaporation, the time of evaporation selected for use 5～15 minutes, and the burning infiltration temperature of evaporation back substrate is controlled at 200～280 degree; The burning infiltration time is 10～20 minutes, and each product must evaporate two times.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199713A (en) * | 2013-04-09 | 2013-07-10 | 黄山市祁门新飞电子科技发展有限公司 | Environment-friendly type bridge rectifier |
| CN105448900A (en) * | 2015-01-26 | 2016-03-30 | 湖北台基半导体股份有限公司 | High-frequency low-pressure-drop power semiconductor module |
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| CN101302634A (en) * | 2008-06-24 | 2008-11-12 | 彭旭林 | Plating solution formula of copper wire tin plating process and copper wire tin plating process |
| CN201360006Y (en) * | 2009-02-12 | 2009-12-09 | 常州银河电器有限公司 | Commutation diode |
| US20110012263A1 (en) * | 2009-07-16 | 2011-01-20 | Renesas Electronics Corporation | Semiconductor device and manufacturing method of the same |
| CN202651121U (en) * | 2012-04-05 | 2013-01-02 | 黄山硅鼎电子有限公司 | Double-copper-electrode rectifier tube chip plated with environmentally-friendly material |
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2012
- 2012-04-05 CN CN201210105760XA patent/CN102637747A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101302634A (en) * | 2008-06-24 | 2008-11-12 | 彭旭林 | Plating solution formula of copper wire tin plating process and copper wire tin plating process |
| CN201360006Y (en) * | 2009-02-12 | 2009-12-09 | 常州银河电器有限公司 | Commutation diode |
| US20110012263A1 (en) * | 2009-07-16 | 2011-01-20 | Renesas Electronics Corporation | Semiconductor device and manufacturing method of the same |
| CN202651121U (en) * | 2012-04-05 | 2013-01-02 | 黄山硅鼎电子有限公司 | Double-copper-electrode rectifier tube chip plated with environmentally-friendly material |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103199713A (en) * | 2013-04-09 | 2013-07-10 | 黄山市祁门新飞电子科技发展有限公司 | Environment-friendly type bridge rectifier |
| CN105448900A (en) * | 2015-01-26 | 2016-03-30 | 湖北台基半导体股份有限公司 | High-frequency low-pressure-drop power semiconductor module |
| CN105448900B (en) * | 2015-01-26 | 2019-02-26 | 湖北台基半导体股份有限公司 | A kind of high frequency low voltage drop power semiconductor modular |
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Application publication date: 20120815 |