CN202795115U - Voltage regulating circuit - Google Patents
Voltage regulating circuit Download PDFInfo
- Publication number
- CN202795115U CN202795115U CN 201220485329 CN201220485329U CN202795115U CN 202795115 U CN202795115 U CN 202795115U CN 201220485329 CN201220485329 CN 201220485329 CN 201220485329 U CN201220485329 U CN 201220485329U CN 202795115 U CN202795115 U CN 202795115U
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- China
- Prior art keywords
- resistance
- ground
- bipolar transistor
- regulating circuit
- resistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Abstract
The utility model discloses a voltage regulating circuit which comprises an N-channel metal oxide semiconductor (NMOS) transistor, a negative-positive-negative (NPN) bipolar transistor, a first resistor, a second resistor, an adjustable resistor and a schottky barrier diode (SBD). A grid of the NMOS transistor is connected to a voltage source through the first resistor and connected to the ground through the adjustable resistor, a source electrode is connected to the ground, and a drain electrode is connected to a negative electrode end of the SBD and a base electrode of the NPN bipolar transistor and is connected to the voltage source through the second resistor. A positive electrode end of the SBD is connected to the ground. A source electrode of the NPN bipolar transistor is connected to the ground, and a collector electrode of the NPN bipolar transistor serves as a negative electrode of an output end. The voltage regulating circuit is small in size, low in power consumption, high in speed, suitable for integration, and simple in structure.
Description
Technical field
The utility model relates to a kind of regulating circuit.
Background technology
Pressure regulation is the circuit module of often using in the circuit, is used for Circuit tuning function voltage.Generally adopt thyristor as the part of pressure regulation in the available circuit, but the area of thyristor is larger, it is larger to generate heat, and the power of consumption is also larger, is not applicable to integrated circuit, generally is at the external regulating circuit of chip.
The utility model content
Goal of the invention of the present utility model is: for the problem of above-mentioned existence, provide a kind of regulating circuit of MOS structure.
The technical solution adopted in the utility model is such: a kind of regulating circuit of the present utility model, this circuit comprise nmos pass transistor, NPN bipolar transistor, the first resistance, the second resistance, adjustable resistance and Schottky-barrier diode; The grid of described nmos pass transistor is connected to voltage source and is connected to ground by adjustable resistance by the first resistance, source ground, drain electrode be connected to Schottky-barrier diode negative pole end, NPN bipolar transistor base stage and be connected to voltage source by the second resistance; The positive terminal ground connection of Schottky-barrier diode; The source ground of NPN bipolar transistor, collector is as the negative pole of output terminal.
In above-mentioned circuit, described the first resistance is the identical resistance of parameter with the second resistance.
In sum, owing to adopted technique scheme, the beneficial effects of the utility model are: this circuit body is less, power consumption is little, speed is high, it is integrated to be applicable to, and circuit structure is simple.
Description of drawings
Fig. 1 is the circuit theory diagrams of the utility model regulating circuit.
Embodiment
Below in conjunction with accompanying drawing, the utility model is described in detail.
In order to make the purpose of this utility model, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the utility model is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the utility model, and be not used in restriction the utility model.
As shown in Figure 1, be the circuit theory diagrams of the utility model regulating circuit.
Below in conjunction with Fig. 1 the annexation between above-mentioned each electronic devices and components of the utility model is elaborated: a kind of regulating circuit, this circuit comprise nmos pass transistor Q1, NPN bipolar transistor T1, the first resistance R 1, the second resistance R 2, adjustable resistance RW1 and Schottky-barrier diode Z1; The grid of described nmos pass transistor Q1 is connected to voltage source V DD and is connected to ground GND by adjustable resistance RW1 by the first resistance R 1, source ground GND, drain electrode be connected to Schottky-barrier diode Z1 negative pole end, NPN bipolar transistor T1 base stage and be connected to voltage source V DD by the second resistance R 2; The positive terminal ground connection of Schottky-barrier diode Z1; The source ground GND of NPN bipolar transistor T1, collector is as the negative pole of output end vo ut.
In the above-mentioned circuit of the utility model, described the first resistance R 1 is the identical resistance of parameter with the second resistance R 2.
The above only is preferred embodiment of the present utility model; not in order to limit the utility model; all any modifications of within spirit of the present utility model and principle, doing, be equal to and replace and improvement etc., all should be included within the protection domain of the present utility model.
Claims (2)
1. a regulating circuit is characterized in that, comprises nmos pass transistor (Q1), NPN bipolar transistor (T1), the first resistance (R1), the second resistance (R2), adjustable resistance (RW1) and Schottky-barrier diode (Z1); The grid of described nmos pass transistor (Q1) is connected to voltage source (VDD) and is connected to ground (GND) by adjustable resistance (RW1) by the first resistance (R1), source ground (GND), drain electrode be connected to Schottky-barrier diode (Z1) negative pole end, NPN bipolar transistor (T1) base stage and be connected to voltage source (VDD) by the second resistance (R2); The positive terminal ground connection of Schottky-barrier diode (Z1); The source ground (GND) of NPN bipolar transistor (T1), collector is as the negative pole of output terminal (Vout).
2. regulating circuit according to claim 1 is characterized in that, described the first resistance (R1) is the identical resistance of parameter with the second resistance (R2).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220485329 CN202795115U (en) | 2012-09-21 | 2012-09-21 | Voltage regulating circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 201220485329 CN202795115U (en) | 2012-09-21 | 2012-09-21 | Voltage regulating circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
CN202795115U true CN202795115U (en) | 2013-03-13 |
Family
ID=47822349
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN 201220485329 Expired - Fee Related CN202795115U (en) | 2012-09-21 | 2012-09-21 | Voltage regulating circuit |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN202795115U (en) |
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2012
- 2012-09-21 CN CN 201220485329 patent/CN202795115U/en not_active Expired - Fee Related
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C17 | Cessation of patent right | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130313 Termination date: 20130921 |