CN202758866U - Glass seal structure for metal sealing device of semiconductor - Google Patents

Glass seal structure for metal sealing device of semiconductor Download PDF

Info

Publication number
CN202758866U
CN202758866U CN 201220307138 CN201220307138U CN202758866U CN 202758866 U CN202758866 U CN 202758866U CN 201220307138 CN201220307138 CN 201220307138 CN 201220307138 U CN201220307138 U CN 201220307138U CN 202758866 U CN202758866 U CN 202758866U
Authority
CN
China
Prior art keywords
shell
glass
connecting portion
sealing device
meniscus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 201220307138
Other languages
Chinese (zh)
Inventor
杨正义
唐勇
杨辉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
China Zhenhua Group Yongguang Electronics Coltd
Original Assignee
China Zhenhua Group Yongguang Electronics Coltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by China Zhenhua Group Yongguang Electronics Coltd filed Critical China Zhenhua Group Yongguang Electronics Coltd
Priority to CN 201220307138 priority Critical patent/CN202758866U/en
Application granted granted Critical
Publication of CN202758866U publication Critical patent/CN202758866U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

The utility model relates to the field of semiconductors and particularly discloses a glass seal structure for a metal sealing device of a semiconductor. The glass seal structure comprises a shell, an external lead arranged in the shell and insulating glass filled between the shell and the external lead. One end face of the insulating glass forms a crescent surface; and the external lead comprises an end portion, a connecting portion and a welding portion, wherein the end portion, the connecting portion and the welding portion are coaxially arranged in sequence, the end portion is arranged at one side of the shell, the connecting portion is arranged at the inner side of the shell and is contacted with the insulating glass, the welding portion extends out of the other side of the shell, the radius of the connecting portion is larger than the radius of the welding portion, and a step structure is formed between the connecting portion and the welding portion and at the crescent surface. According to the glass seal structure for the metal sealing device of the semiconductor, the phenomenon of glass insulator assembly cracking is effectively prevented, and the elimination rate of glass cracking of a semiconductor metal shell is reduced.

Description

Semiconductor alloy sealing device glass capsulation structure
Technical field
The utility model relates to field of semiconductor devices, relates in particular to a kind of hermetically-sealed construction of semiconductor alloy sealing device.
Background technology
The metallic packaging parts such as the B that adopts in semiconductor device, F type are because its mechanical strength is high, air-tightness is good, cost moderate three large advantages are widely used.As shown in Figure 1, be the overall structure schematic diagram of a kind of F type metallic packaging part base in the prior art, it forms by glass insulation sub-component 2 and metab 1 soldering.Wherein this glass insulation sub-component 2(is shown in Figure 2) by in the metal shell 4 that glass blank 3 is packed into, again outer lead 5 is inserted glass blank 3, can form glass insulation sub-component 2 behind the sealing by fusing.
After metab 1 soldering, in the subsequent product production process, because the outer lead 5 of metab 1 unavoidably can be subject to external active force when production and processing, thereby the phenomenon that causes glass insulation sub-component 2 crackings, not only affect quality and the outward appearance of product, can have influence on what is more metab 1 reliability in use.The main cause that causes glass to split is as follows: because the glass insulation sub-component is at the meeting nature meniscus that the position height of formation shown in the A differs in Fig. 2 behind the glass head seal, the U-shaped degree of depth drop H of meniscus is larger, and the glass of metab 1 splits also larger than row in the production process.Although have some technologies can control theoretically the size of the U-shaped degree of depth drop H of meniscus, in actual production, but be difficult to effectively implement.Moreover, because the distinctive fragility of glass itself, when the outer lead 5 of glass insulation sub-component 2 is subject to vertical, active force acts directly on the A place, the footpath outward force will be directly transferred to glass and can cut down the sealing by fusing interface, even thereby to cause the U-shaped degree of depth drop H of meniscus be 0 o'clock, the glass that larger proportion also can occur splits phenomenon.Therefore, be necessary to provide a kind of structure, to avoid the phenomenon of glass insulation sub-component cracking.
The utility model content
The purpose of this utility model is, proposes a kind of semiconductor alloy sealing device glass capsulation structure, and it can effectively avoid the phenomenon of glass insulation sub-component cracking, reduces the mortality that semiconductor alloy shell glass splits.
For achieving the above object, the utility model provides a kind of semiconductor alloy sealing device glass capsulation structure, comprise: shell, be located at the outer lead in the shell and be filled in shell and outer lead between insulating glass, this insulating glass one end face is formed with a meniscus, this outer lead comprises the end of successively coaxial setting, connecting portion and weld part, shell one side is located in this end, connecting portion is located at the shell inboard and is contacted with insulating glass, the weld part extension is arranged at the shell opposite side, the radius of this connecting portion forms a ledge structure at the meniscus place greater than the radius of weld part between this connecting portion and the weld part.
Wherein, described shell is a metal shell.Outer lead is metal lead wire, and the end of this outer lead, connecting portion and weld part integral type arrange.
The degree of depth drop of meniscus is less than 0.20mm in the utility model.
Semiconductor alloy sealing device glass capsulation structure of the present utility model, it is by rational structure setting, so that how many meniscus level that forms behind glass head seal can controlling by amount of glass; Simultaneously, when outer lead is subject to vertical external active force, also can obtain buffering, reduce glass and can cut down the suffered active force in sealing by fusing interface, thereby improved the rate of finished products of product in parts and the subsequent production process.
Description of drawings
In order to be illustrated more clearly in the utility model embodiment or technical scheme of the prior art, the below will do to introduce simply to the accompanying drawing of required use in embodiment or the description of the Prior Art, apparently, accompanying drawing in the following describes only is embodiment more of the present utility model, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is the overall structure schematic diagram of a kind of F type metallic packaging part base in the prior art;
Fig. 2 is a kind of structural representation of specific embodiment behind glass insulation sub-component 2 sealings by fusing in the prior art;
Fig. 3 is the structural representation of a kind of specific embodiment of semiconductor alloy sealing device glass capsulation structure in the utility model.
Embodiment
Below in conjunction with the accompanying drawing among the utility model embodiment, the technical scheme among the utility model embodiment is clearly and completely described, obviously, described embodiment only is the utility model part embodiment, rather than whole embodiment.Based on the embodiment in the utility model, those of ordinary skills are not making the every other embodiment that obtains under the creative work prerequisite, all belong to the scope of the utility model protection.
As shown in Figure 3, the utility model provides a kind of semiconductor alloy sealing device glass capsulation structure, it comprises shell 10, be located at the outer lead 20 in the shell 10 and be filled in shell 10 and outer lead 20 between insulating glass 30, these insulating glass 30 1 end faces are formed with a meniscus 32, this outer lead 20 comprises the end 22 of successively coaxial setting, connecting portion 24 and weld part 26, shell 10 1 sides are located in this end 22, connecting portion 24 is located at shell 10 inboards and is contacted with insulating glass 30, weld part 26 extensions are arranged at shell 10 opposite sides, the radius of this connecting portion 24 forms a ledge structure 28 at meniscus 32 places greater than the radius of weld part 26 between this connecting portion 24 and the weld part 26.The utility model is by arranging connecting portion 24 radiuses greater than this variable-diameter structure of weld part 26 radiuses, thereby form a ledge structure 28 at meniscus 32 places, and in conjunction with the structural design of dwindling meniscus 32 radians, can effectively avoid the phenomenon of glass insulation sub-component cracking, reduce the mortality that semiconductor alloy shell glass splits.
In the utility model, described shell 10 is a metal shell, and outer lead 20 is metal lead wire, the end 22 of this outer lead 20, connecting portion 24 and weld part 26 integral type settings.Wherein, this connecting portion 24 contacts with insulating glass 30, and insulating glass 30 can play good insulating effect to shell 10 and outer lead 20.Weld part 26 is used for the metab of packing into vertically downward, and carries out soldering to form F type base with metab.Outer lead of the prior art, its side with glass contact is identical with a side radius that extends the shell setting, therefore form easily glass melting piles up at the meniscus place, and the utility model is by the reducing setting of connecting portion 24, thereby form a ledge structure 28 at meniscus 32 places between connecting portion 24 and weld part 26, this ledge structure 28 can effectively avoid behind the glass melting forming at meniscus 32 places the phenomenon of piling up.
As a kind of specific embodiment of the present utility model, the U-shaped degree of depth drop H of described meniscus 32 is less than 0.20mm.In the prior art, the U-shaped degree of depth drop H of meniscus is between 0.45mm-0.55mm on this insulating glass end face.
In sum, semiconductor alloy sealing device glass capsulation structure of the present utility model, it is by improving the structure of outer lead 20, theoretical according to flexural deformation, i.e. " weak district is out of shape first, and distortion must weakly be distinguished " is when outer lead 20 is subject to vertical external active force, stress concentrates on ledge structure 28 places that connecting portion 24 variable-diameter structure form, thereby active force is eased.Simultaneously, because the setting of connecting portion 24 variable-diameter structure, insulating glass 30 when sealing by fusing owing to be subject to the restriction of ledge structure 28, the height of the meniscus 32 of its formation can be by insulating glass 30 amount how much be controlled at ledge structure 28 places, thereby the radian of control meniscus, namely can control the size of the U-shaped degree of depth drop H of meniscus 32, thereby reduce glass and can cut down the suffered active force in sealing by fusing interface, improve parts and rear portion finished product rate.Moreover, the utility model is by the improvement to the glass insulator modular construction, improved the working strength at glass insulator place after the base soldering, make base in the glass mortality of production, transportation and use procedure, before the architecture advances 30% ease down to after the improvement below 10%, greatly reduced cost consumption.
The above only is preferred embodiment of the present utility model; not in order to limit the utility model; all within spirit of the present utility model and principle, any modification of doing, be equal to replacement, improvement etc., all should be included within the protection range of the present utility model.

Claims (4)

1. semiconductor alloy sealing device glass capsulation structure, comprise shell, be located at the outer lead in the shell and be filled in shell and outer lead between insulating glass, this insulating glass one end face is formed with a meniscus, it is characterized in that, this outer lead comprises the end of successively coaxial setting, connecting portion and weld part, shell one side is located in this end, connecting portion is located at the shell inboard and is contacted with insulating glass, the weld part extension is arranged at the shell opposite side, the radius of this connecting portion forms a ledge structure at the meniscus place greater than the radius of weld part between this connecting portion and the weld part.
2. semiconductor alloy sealing device glass capsulation structure as claimed in claim 1 is characterized in that described shell is metal shell.
3. semiconductor alloy sealing device glass capsulation structure as claimed in claim 1 is characterized in that described outer lead is metal lead wire, and its end, connecting portion and weld part integral type arrange.
4. semiconductor alloy sealing device glass capsulation structure as claimed in claim 1 is characterized in that the degree of depth drop of described meniscus is less than 0.20mm.
CN 201220307138 2012-06-27 2012-06-27 Glass seal structure for metal sealing device of semiconductor Expired - Fee Related CN202758866U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 201220307138 CN202758866U (en) 2012-06-27 2012-06-27 Glass seal structure for metal sealing device of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 201220307138 CN202758866U (en) 2012-06-27 2012-06-27 Glass seal structure for metal sealing device of semiconductor

Publications (1)

Publication Number Publication Date
CN202758866U true CN202758866U (en) 2013-02-27

Family

ID=47738032

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 201220307138 Expired - Fee Related CN202758866U (en) 2012-06-27 2012-06-27 Glass seal structure for metal sealing device of semiconductor

Country Status (1)

Country Link
CN (1) CN202758866U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104439784A (en) * 2014-11-17 2015-03-25 中国电子科技集团公司第四十三研究所 Butt-joint low-resistance lead for electronic packaging and manufacturing method thereof
CN104712761A (en) * 2013-12-13 2015-06-17 中国科学院大连化学物理研究所 Metal and glass seal structure for alkali metal sample cell
CN109454356A (en) * 2018-11-12 2019-03-12 合肥圣达电子科技实业有限公司 A kind of method that high frequency assembly encapsulates transition piece and guarantee transition piece welding airtightness

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104712761A (en) * 2013-12-13 2015-06-17 中国科学院大连化学物理研究所 Metal and glass seal structure for alkali metal sample cell
CN104439784A (en) * 2014-11-17 2015-03-25 中国电子科技集团公司第四十三研究所 Butt-joint low-resistance lead for electronic packaging and manufacturing method thereof
CN109454356A (en) * 2018-11-12 2019-03-12 合肥圣达电子科技实业有限公司 A kind of method that high frequency assembly encapsulates transition piece and guarantee transition piece welding airtightness

Similar Documents

Publication Publication Date Title
CN202758866U (en) Glass seal structure for metal sealing device of semiconductor
CN204144243U (en) A kind of structure of chip diode
CN102569102A (en) Hermetic package method and structure of transistor base and transistor pin
CN203536467U (en) LED device having transition substrate
CN205789919U (en) A kind of hydrid integrated circuit aluminium silicon carbide integral packaging shell
CN210535686U (en) Structure for improving flip LED die bonding yield
CN104795278A (en) Sealing structure of DC contactor
CN203056237U (en) A sealing connector of an integral glass insulator
CN201194226Y (en) Highly reliable diode device applying lead wire pre-welding construction
CN201112375Y (en) Semiconductor device seal packaging metal foundation
CN201549629U (en) USB plug
CN208608129U (en) The Hermetical connecting structure of D.C. contactor
CN203707034U (en) DC contactor sealed structure
CN202473892U (en) Airtight packaging structure of transistor tube seat and base pin
CN103745935B (en) A kind of vacuole-free transparent glass shell and metal sealing method
CN203481208U (en) Novel ceramic-shell diode
CN202042523U (en) Copper particles and crystal particles combined prewelding plate for manufacturing diode
CN202585399U (en) Lead frame
CN204257601U (en) A kind of semiconductor die package magazine of anti-collapse silk
CN203733782U (en) TO-220HF waterproof seal lead frame
CN207183284U (en) A kind of TVS diode encapsulating structure
CN205984897U (en) Use high withstand voltage fast helping of chip of recovering and weld diode
CN203260743U (en) Cable crimping pipe
CN201887037U (en) Internal lead wire structure for encapsulating field-effect tube
CN202678316U (en) Axial diode electrode leading wire with diversion trenches

Legal Events

Date Code Title Description
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20130227

Termination date: 20150627

EXPY Termination of patent right or utility model