CN202757591U - Measurement system of layer thickness of polybase photoelectric cathodic coating - Google Patents
Measurement system of layer thickness of polybase photoelectric cathodic coating Download PDFInfo
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- CN202757591U CN202757591U CN 201220357118 CN201220357118U CN202757591U CN 202757591 U CN202757591 U CN 202757591U CN 201220357118 CN201220357118 CN 201220357118 CN 201220357118 U CN201220357118 U CN 201220357118U CN 202757591 U CN202757591 U CN 202757591U
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- polybase
- catoptron
- optical splitter
- photoelectric
- negative electrode
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Abstract
The utility model discloses a measurement system of the layer thickness of a polybase photoelectric cathodic coating and is mainly used for the measurement of the layer thickness of the polybase photoelectric cathodic coating of a low-light-level image intensifier in a vacuum state. The main technical scheme of the measurement system of the layer thickness of the polybase photoelectric cathodic coating is that a light source is installed on the left side in a box body; a monochromator and an optical splitter are also installed on the left side in a box body; a reflector is arranged above the optical splitter; a photomultiplier is installed above the optical splitter; the photomultiplier is connected with a computer; a reflection rate detecting component is installed in the rear of the lower part of the optical splitter; and a reflector is also arranged in the rear of the lower part of the optical splitter. Through practical application, the utility model proves that defects that the quality of a polybase photoelectric cathode of the low-light-level image intensifier is unstable and technical requirements are difficult to satisfy are made up fundamentally, so that the sensibility of the polybase photoelectric cathode and the integral performance level of the low-light-level image intensifier are improved effectively.
Description
Technical field
The utility model relates to a kind of system that photocathode thicknesses of layers under the vacuum state is measured, be mainly used in gleam image intensifier measurement to its multialkali photocathode thicknesses of layers under vacuum state, also can be used for the cathodic coating layer thickness of similar photoelectric device is measured.
Background technology
Gleam image intensifier is the core component of low-light level night vision device, its structure (see figure 1), and it is comprised of glass input window 1, polybase negative electrode rete 2, microchannel plate 3, phosphor powder layer 4, output window 5 etc.Polybase negative electrode rete 2 is directly to be produced on the glass surface, has two interfaces, i.e. the interface of glass and polybase negative electrode rete and the interface of polybase negative electrode rete and vacuum, and the gleam image intensifier internal vacuum is about 10
-8Torr.Its principle of work; At night, when faint light enters gleam image intensifier, it is rear by 2 absorptions of polybase negative electrode rete to see through glass input window 1, utilizing emitted light electronics after the polybase negative electrode absorption optical, photoelectron enters microchannel plate 3 under electric field action, obtained multiplication through microchannel plate quantity, impact fluorescence bisque 4 is luminous more at last for the multiplication photoelectron of microchannel plate output, and by output window 5 outputs, the luminous flux of output is compared with the luminous flux of input and has been amplified more than tens thousand of times like this, be the brightness that output brightness reaches the eye-observation target, therefore realized the in the dark purpose of object observing of human eye.Yet the core technology of gleam image intensifier is multialkali photocathode (hereinafter to be referred as the polybase negative electrode), the polybase negative electrode is made by the principle of vacuum evaporation, the thickness of control rete is the key parameter of making the polybase negative electrode in manufacturing process, and the polybase negative electrode can only be present in the vacuum state, will soon damage in case be exposed at atmosphere, therefore up to the present, also there be not a kind of method or system of effectively measuring polybase cathodic coating layer thickness.Traditional method is to judge roughly by the Film color of observing the polybase negative electrode: color is deeply thick for rete, of light color is that rete is thin, the precision of control is not high, and the thicknesses of layers of polybase negative electrode is the height that directly affects cathode sensitivity, determining the performance quality of gleam image intensifier, the technique that causes present polybase negative electrode to be made is unstable, and quality index is difficult to guarantee.Therefore in the urgent need to a kind of method or device of measuring comparatively accurately polybase cathodic coating layer thickness, study the making of instructing gleam image intensifier polybase negative electrode.
Summary of the invention
The main technical problems to be solved in the utility model and purpose are: according to the few measurement means of present gleam image intensifier polybase cathodic coating break, can't obtain accurately thicknesses of layers data, hinder the defective of best film layer thickness research.Utilize the interference of light principle, design a kind of special measuring system, accurately measure the polybase cathodic coating layer thickness that is under the vacuum state, foundation is provided for the research of best polybase negative electrode rete, fundamentally overcome the phenomenon that quality is unstable, technical indicator is difficult to arrive in the manufacturing of polybase negative electrode.Effectively improve the sensitivity of polybase negative electrode and the overall performance level of gleam image intensifier.
Main technical schemes of the present utility model: concrete structure is, from the left side in the casing, by support and gluing mode, a light source is installed, monochromator of coaxial installation afterwards, optical splitter, a catoptron is installed in dead ahead, optical splitter top, become with catoptron 90 ° under a catoptron is installed again, after catoptron along the optical axis extended line of monochromator, a photomultiplier is installed, the output terminal of photomultiplier is connected with casing computing machine outward, measuring reflectance parts are installed at rear, optical splitter bottom, a catoptron is installed after the exit end of measuring reflectance parts, a catoptron is installed directly over becoming 90 ° with catoptron again.
The utility model proves by practical application: reach the development purpose fully, system can accurately measure the one-tenth-value thickness 1/10 of the polybase negative electrode rete that is under the vacuum state, has found out the optimum thickness of polybase negative electrode rete by research; On technique, control, produce optimum thickness or near the polybase negative electrode rete of optimum thickness.Be applied at present in the products such as 1XZ18/18WHS high-performance gleam image intensifier series, 1XZ25/25WS two generations gleam image intensifier series, 1XZ18/18WS two generations gleam image intensifier series.With originally compared, the sensitivity of polybase negative electrode has improved more than 20 percent, supporting night vision instrument operating distance has improved more than 25 percent with it, has promoted steadily the overall performance level of gleam image intensifier.
Description of drawings
Below in conjunction with accompanying drawing, embodiment of the present utility model is described in further detail.
Fig. 1 is the structural representation of measured gleam image intensifier.
Fig. 2 is each parts of the utility model, apparatus installation arrangement synoptic diagram.
Fig. 3 is the structure for amplifying synoptic diagram of the utility model measuring reflectance parts 11.
Fig. 4 is operational flowchart of the present utility model.
Fig. 5 is that the utility model is to the spectral reflectivity curve map of gleam image intensifier polybase negative electrode actual measurement.
Fig. 6 is the curve map of gleam image intensifier polybase negative electrode refractive index n.
Embodiment
With reference to Fig. 1, according to photoemissive theory, polybase cathodic coating layer thickness affects two processes, the one, absorption process, the 2nd, diffusion process in the photoemission.To absorption process, make polybase negative electrode rete that good light absorption is arranged, as long as increase the thickness of polybase negative electrode rete.Yet the polybase negative electrode is a kind of polycrystalline semiconductor thin film, electronics is in diffusion process, can there be energy loss when passing through the crystal grain face, therefore the escaped depth of the electronics weak point of comparing with single crystal semiconductor, so increase polybase cathodic coating layer thickness, although can improve the absorptivity to incident light, particularly improved the absorptivity to the long wave incident light, but then because the absorption degree of depth of shortwave is short, increase the escape probability that polybase cathodic coating layer thickness will reduce the shortwave photon, also just reduced the photoelectric sensitivity of polybase negative electrode shortwave, so the polybase negative electrode exists the problem of an optimum thickness.When polybase negative electrode rete reaches optimum thickness, naturally that its sensitivity also reaches is the highest.
With reference to Fig. 1,2, main technical schemes of the present utility model is described: the utility model is comprised of casing 9, light source 6, monochromator 7, optical splitter 8, gleam image intensifier 10, measuring reflectance parts 11, catoptron 12, photomultiplier 13, computing machine 14, case lid 15 etc.Concrete structure is, from the left side in the casing 9, by support and gluing mode, a light source 6 is installed, monochromator 7 of coaxial installation afterwards, optical splitter 8, a catoptron 12 is installed in dead ahead, optical splitter 8 top, with under 12 one-tenth 90 ° of the catoptrons catoptron 12 is installed again, after catoptron 12 along the optical axis extended line of monochromator 7, a photomultiplier 13 is installed, the output terminal of photomultiplier 13 is connected with casing computing machine 14 outward, measuring reflectance parts 11 are installed at rear, optical splitter 8 bottom, a catoptron 12 is installed after the exit end of measuring reflectance parts 11, and directly over 12 one-tenth 90 ° of the catoptrons catoptron 12 is installed again.
With reference to Fig. 3, described measuring reflectance parts 11 are comprised of incidence reflection mirror 11-1, turning mirror 11-2, outgoing catoptron 11-5 and bearing 11-3.Its structure is, in housing 11-4, press successively the location arrangements of incident catoptron 11-1, turning mirror 11-2, outgoing catoptron 11-5, after the requirement assembling correction by certain incident angle and emergence angle, gluingly fixedly form, in upper shed place of housing 11-4, be fixedly connected with a bearing 11-3 by screw.
With reference to Fig. 2, described light source 6, its composition is: in light source shell 6-1, by the fixing Halogen lamp LED 6-2 of support, (wavelength is 360-2000nm).
With reference to Fig. 2, monochromator 7, optical splitter 8, catoptron 12, photomultiplier 13, computing machine 14 are the country that can purchase in market or photoelectric instrument and the electronic devices and components of industry standard.
With reference to Fig. 2, reflectivity collection of the present utility model and data processing software are voluntarily Programming.
With reference to Fig. 2,3,4,5,6, the utility model is operated under the dark room conditions.It measures operating process: A, equipment preheating.The power supply of at first opening measuring system and computing machine carried out preheating about 2～3 minutes; B, system light path inspection.Whether opening light source 6 and function software, to carry out the system light path inspection normal, checked by Computer display to get final product; C, inspection reference path.Open the box cover 15 of measuring system and the guard shield of measuring reflectance parts 11, check whether reference path is normal, then closes cover plate and guard shield; D, spectral range are set.The spectral range 360nm that need to test according to gleam image intensifier～1000nm sets; E, the empty reflectivity of surveying.Opening operation software, the collection of beginning reflected light are carried out empty survey of spectral reflectivity and once (are not put by the side part), and reflectance test 100% makes zero; F, cleaning measured piece.With the glass input window surface of alcohol and the wiping of ether mixed solution gleam image intensifier 10 to be measured, (see figure 3) to be measured after the cleaning; G, the measured piece of packing into.Open the box cover 15 of measuring system and the guard shield of measuring reflectance parts 11, the gleam image intensifier 10(polybase cathode plane of packing into to be measured is seen Fig. 3 down), close cover plate 15; H, measure reflectance curve.Carry out the measuring reflectance of reflected light collection and spectral range, the light that sent by light source 6 this moment, isolate continuously monochromatic light through monochromator 7, be divided into the two-beam line by optical splitter 8, a branch of is reference light, a branch of for measuring light, measurement light shines the polybase negative electrode of gleam image intensifier 10, light reflection is turned back by measuring reflectance parts 11 and catoptron 12, alternately receive the reflected light of reference light and polybase negative electrode by highly sensitive photomultiplier 13, and the reflected light that collects, reference optical signal is transformed into electric signal, exports to computing machine 14, process through software, draw polybase negative electrode spectral reflectance rate curve (see figure 5); I, calculating thicknesses of layers.From Fig. 5 spectral reflectance rate curve, find the one-level interference and weaken wavelength X corresponding to peak, from Fig. 6 refractive index curve, find the one-level interference and weaken refractive index n corresponding to peak wavelength X, N=1 interferes equation 2nd=λ N for the people, calculates the one-tenth-value thickness 1/10 d of polybase negative electrode rete.
With reference to Fig. 1,5,6, can find out from the spectral reflectance curve of Fig. 5, curve is compared with the reflectance curve of ordinary optical rete, not very regular, there is interference peaks, reason is that polybase negative electrode rete is a kind of semiconductive thin film with strong absorption coefficient, and different wave length is existed different refractive indexes and extinction coefficient, and the incident light of its corresponding wavelength two is restrainted the result that reflected light interfere what the reflection of glass and cathodic coating bed interface and negative electrode rete and vacuum interface reflected.If the catoptrical phase differential of this two bundle differs the odd-multiple of λ/2, to occur so interfering and weaken the peak, if differ the even-multiple of λ/2, the reinforcement peak will appear interfering, that is to say, two interference weaken corresponding wavelength place, peak on the spectral reflectance rate curve, the catoptrical phase differential of on glass and cathodic coating bed interface and negative electrode rete and the vacuum interface two bundle must differ the odd-multiple of λ/2, but consider at glass and cathodic coating bed interface reflex time and have half-wave loss, therefore, two interference weaken corresponding wavelength place, peak on the spectral reflectance rate curve, in fact the catoptrical phase differential of two bundles of glass and cathodic coating bed interface and negative electrode rete and vacuum interface differs the even-multiple of λ/2, satisfies and interferes equation: 2nd=
λN
N represents that the interference of polybase negative electrode rete one-level weakens the refractive index of peak corresponding wavelength, (check in, also can look into) from Fig. 6 wavelength and index of refraction relationship curve from the optics handbook in the formula; D represents polybase cathodic coating layer thickness; N represents coefficient, and the one-level interference weakens the peak and gets 1.(one-level is interfered first the ebb weaken that the peak refers to occur in the curve).
The calculating thicknesses of layers is given an example: with reference to Fig. 5,6, from Fig. 5, can read corresponding one-level interference and weaken peak wavelength X=840nm, from Fig. 6, find again refractive index n corresponding to 840nm=2.2, N=1, for interfering equation more than the people: 2nd=λ N, obtain polybase cathodic coating layer thickness d=190.9 nm.
The application of the utility model in gleam image intensifier polybase negative electrode is made: rule of thumb, choose the higher gleam image intensifier of some polybase cathode sensitivities, carry out the measurement to its polybase cathodic coating layer thickness, measured value is set as the optimum thickness value after processing.During the polybase negative electrode is made, if thicknesses of layers does not reach the requirement of optimum thickness value, take negative electrode rete remedial measures, in the general evaporated device of photocathode, remove the polybase negative electrode rete of evaporation, re-start evaporation, the evaporation time of proper extension polybase negative electrode rete is until reach till the requirement of best film layer thickness value; If thicknesses of layers exceeds the requirement of optimum thickness value, just reduce the evaporation time of polybase negative electrode rete, until reach or get final product near best film layer thickness value.
The utility model is to utilize the interference of the spectral reflectance rate curve of actual measurement to weaken the thicknesses of layers that spike length calculates, and is basically identical with actual conditions, so this measuring method and institute's Thickness Measurement by Microwave data are reliable.
Claims (2)
1. the measuring system of a multialkali photocathode thicknesses of layers, it is characterized in that: concrete structure is, from the left side in the casing (9), by support and gluing mode, a light source (6) is installed, a monochromator of coaxial installation (7) afterwards, optical splitter (8), a catoptron (12) is installed in optical splitter (8) dead ahead, top, become with catoptron (12) 90 ° under a catoptron (12) is installed again, at catoptron (12) afterwards along the optical axis extended line of monochromator (7), a photomultiplier (13) is installed, the output terminal of photomultiplier (13) is connected with casing computing machine (14) outward, measuring reflectance parts (11) are installed at optical splitter (8) rear, bottom, a catoptron (12) is installed after the exit end of measuring reflectance parts (11), and a catoptron (12) is installed directly over catoptron (12) becomes 90 ° again.
2. the measuring system of multialkali photocathode thicknesses of layers according to claim 1, it is characterized in that: the structure of measuring reflectance parts (11) is, in housing (11-4), press successively the location arrangements of incident catoptron (11-1), turning mirror (11-2), outgoing catoptron (11-5), after the requirement assembling correction by incident angle and emergence angle, gluingly fixedly form, in upper shed place of housing (11-4), be fixedly connected with a bearing (11-3) by screw.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220357118 CN202757591U (en) | 2012-07-23 | 2012-07-23 | Measurement system of layer thickness of polybase photoelectric cathodic coating |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201220357118 CN202757591U (en) | 2012-07-23 | 2012-07-23 | Measurement system of layer thickness of polybase photoelectric cathodic coating |
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| CN202757591U true CN202757591U (en) | 2013-02-27 |
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| CN 201220357118 Expired - Lifetime CN202757591U (en) | 2012-07-23 | 2012-07-23 | Measurement system of layer thickness of polybase photoelectric cathodic coating |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104613882A (en) * | 2015-02-12 | 2015-05-13 | 江苏宇迪光学股份有限公司 | Lens center thickness measuring device based on optical phase demodulation and measuring method using same |
| CN112880594A (en) * | 2021-01-14 | 2021-06-01 | 北方夜视技术股份有限公司 | Image alignment calibration and inspection method applied to low-light-level image intensifier |
-
2012
- 2012-07-23 CN CN 201220357118 patent/CN202757591U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104613882A (en) * | 2015-02-12 | 2015-05-13 | 江苏宇迪光学股份有限公司 | Lens center thickness measuring device based on optical phase demodulation and measuring method using same |
| CN112880594A (en) * | 2021-01-14 | 2021-06-01 | 北方夜视技术股份有限公司 | Image alignment calibration and inspection method applied to low-light-level image intensifier |
| CN112880594B (en) * | 2021-01-14 | 2022-06-03 | 北方夜视技术股份有限公司 | Image alignment calibration and inspection method applied to low-light-level image intensifier |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20130227 |