CN110346326A - A kind of optical sensor - Google Patents
A kind of optical sensor Download PDFInfo
- Publication number
- CN110346326A CN110346326A CN201910495464.7A CN201910495464A CN110346326A CN 110346326 A CN110346326 A CN 110346326A CN 201910495464 A CN201910495464 A CN 201910495464A CN 110346326 A CN110346326 A CN 110346326A
- Authority
- CN
- China
- Prior art keywords
- optical sensor
- nanostructured layers
- sensor according
- conductive reflective
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/41—Refractivity; Phase-affecting properties, e.g. optical path length
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/55—Specular reflectivity
- G01N21/552—Attenuated total reflection
- G01N21/553—Attenuated total reflection and using surface plasmons
- G01N21/554—Attenuated total reflection and using surface plasmons detecting the surface plasmon resonance of nanostructured metals, e.g. localised surface plasmon resonance
Abstract
The invention discloses a kind of optical sensors, comprising: substrate from bottom to top, conductive reflective, insulating medium layer and nanostructured layers；The nanostructured layers are metalline material, and are prepared as optical grating construction；The conductive reflective, nanostructured layers and dielectric layer are formed together similar capacity plate antenna structure, and support the RESONANCE ABSORPTION mode of electromagnetic field local；Conductive reflective and nanostructure interlayer have electrical connection.The present invention can generate the characteristic of induced potential using the optical resonance absorbing structure of surface dielectric environment sensitive when forming capacitance structure, directly worked in a manner of electric signal output, the operating wavelength range of sensing is no longer limited by the energy band limitation of conventional semiconductor material, realizes big operating wavelength range.
Description
Technical field
The present invention relates to sensor technical field, in particular to a kind of light refractive index sensing based on surface photovoltage
Device.
Background technique
Currently, biomedicine, environmental monitoring, food safety even fields such as national defence all high sensitive sensor is proposed it is urgent
The demand cut.Optical sensor has the characteristics that high sensitivity, non-marked, thus obtains extensive concern and greatly develop.Usually
Optical sensor all enhances refractive index sensing performance using optical resonance structure, is felt by testing the wavelength movement of formant
Know the variation of measured object.Wherein sensing sensitivity is defined as the wavelength shifting of formant under the conditions of measured object unit variations in refractive index
It is dynamic.Sensing sensitivity is bigger, formant line width is smaller, is advantageously implemented lower detection limit, i.e., the performance of sensor is better.It is logical
Normal optical refractive index sensor is typically necessary huge and expensive spectroscopic analysis system, no to obtain optical detector signal
Conducive to portable instant detection demand.Such as 2007 volume 317 page 783 of Science periodical report it is a kind of based on height
The optical sensor of quality factor optical microcavity illustrates monomolecular detection, however test needs high-precision spectrometer and height
The fiber coupling system etc. of stability.2003 volume 91 page 266 of SensorsandActuatorsB periodical report one kind
Commercial optical sensing equipment based on Surface Plasmon Resonance Technology, refractive index sensing precision reach 0.2%, however this equipment
The test of angle spectrum is carried out including prism, reflecting mirror, detector array etc., it is bulky.
For this purpose, the optical sensor of electrical readout has recently received great interest, optical information is exported by electric signal, is realized more
Step up to gather and simple optical sensor.2014 volume 53 page 5969 of AppliedOptics periodical report it is a kind of by glass
The metal grating filter of glass substrate is attached to the integrated-type optical sensor on silicon detector surface, the measured object on metal grating surface
The light for influencing filter penetrates characteristic, to change the incident optical signal of following silicon detector, and then influences detector output light
Electric current realizes the sensing of integrated form.SPIE magazine in 2015 reports one kind in the paper that the number of volume 9724 is 97240M
Metal nano-void filter is directly accomplished to the integrated-type optical sensor on the surface of pin type GeSi detector.However this kind of device
Part requires semiconductor material to carry out photoelectric conversion, so that sensor processing is complicated, higher cost.
It can be seen that depending on spectroscopic analysis system or high system costly by the prior art of representative of above-mentioned example
The semiconductor photoelectric device for causing this, is unfavorable for the large-scale application of portable instant sensing technology, and operating wavelength range
It is limited to the band structure of semiconductor material.
Summary of the invention
The purpose of the present invention is to overcome the shortcomings of the existing technology and deficiency, provides a kind of optical sensor, utilizes surface
The optical resonance absorbing structure of media environment sensitivity can generate the characteristic of induced potential when forming capacitance structure, directly with electricity
The mode of signal output works, and the operating wavelength range of sensing is no longer limited by the band structure limitation of semiconductor material, realizes
Big operating wavelength range.
The purpose of the present invention is realized by the following technical solution:
A kind of optical sensor, comprising: substrate from bottom to top, conductive reflective, insulating medium layer and nanostructured layers；
The nanostructured layers are metalline material, and are prepared as optical grating construction；
The conductive reflective, nanostructured layers and dielectric layer are formed together similar capacity plate antenna structure, and support electromagnetism
The RESONANCE ABSORPTION mode of field local；Conductive reflective and nanostructure interlayer have electrical connection；
The nanostructured layers generate electronics after absorbing incident light, and form induced potential in capacity plate antenna structure, institute
The variation for stating nanostructure layer surface measured object has an impact RESONANCE ABSORPTION mode, and then causes the variation of induced potential, from
And realize the electric signal output of optical sensing.
Preferably, the material of the conductive reflective includes gold, platinum, silver, copper, aluminium, titanium, nickel, chromium, titanium nitride and zirconium nitride
At least one of Deng.
Further, the thickness of the conductive reflective is greater than 100 nanometers.
Preferably, the dielectric layer is insulation material layer or is made of transparent conductive oxide and insulating materials compound
Layer.
Further, the insulating materials include silica, it is silicon nitride, aluminium oxide, hafnium oxide, magnesium fluoride, organic
At least one of insulating polymer etc..
Further, the transparent conductive oxide includes at least one of tin indium oxide and zinc oxide etc..
Further, the thickness of the transparent conductive oxide is less than 200 nanometers.
Preferably, the material of the nanostructured layers includes gold, platinum, silver, copper, aluminium, titanium, nickel, chromium, titanium nitride, zirconium nitride
At least one of with graphene.
Further, the thickness of the nanostructured layers is less than 200 nanometers.
Further, the nanostructured layers are One Dimension Periodic structure or two-dimensionally periodic structure.
Further, the period of the nanostructured layers is the optical sensor operating wavelength range central wavelength
0.2 times~2 times.
Compared with the prior art, the invention has the following advantages and beneficial effects:
(1) optical sensor of the invention is sensed using the induced potential of generation, directly in a manner of electric signal output
Work, the operating wavelength range of sensing are no longer limited by the energy band limitation of conventional semiconductor material, realize big operating wavelength range.
(2) optical sensor of the invention is worked in a manner of the output of direct electric signal, is not necessarily to external spectrometer or imaging
Equipment etc. significantly improves the portability of sensor-based system.
(3) by being formed together capacity plate antenna structure by conductive reflective, dielectric layer and nanostructured layers, and electromagnetism is supported
Field local enhances sensitivities in the RESONANCE ABSORPTION mode of nanostructure layer surface simultaneously in terms of photoelectric conversion and light sensing two
Energy.
Detailed description of the invention
Fig. 1 is the surface photovoltage optical sensor diagrammatic cross-section of the embodiment of the present invention one.
Fig. 2 is the surface photovoltage optical sensor nanostructure layer plane schematic diagram of the embodiment of the present invention one.
Fig. 3 is that the surface photovoltage optical sensor surface of the embodiment of the present invention one has the water layer of 5 nano thickness to cover respectively
The calculated result of absorption spectrum when lid and no water layer covering.
Fig. 4 is the meter of absorption spectrum when the surface photovoltage sensor of the embodiment of the present invention one is immersed in water and alcohol respectively
Calculate result.
Fig. 5 is that the electric field xy of the RESONANCE ABSORPTION surface modes of the surface photovoltage optical sensor of the embodiment of the present invention one is cutd open
EDS maps.
Fig. 6 is that absorption power of the surface photovoltage optical sensor of the embodiment of the present invention one at resonant absorption wavelengths is close
Spend xy Soil profile.
Fig. 7 is the surface photovoltage optical sensor diagrammatic cross-section of the embodiment of the present invention two.
Fig. 8 is the calculating of absorption spectrum when the surface photovoltage optical sensor of the embodiment of the present invention two is covered without determinand
As a result.
Fig. 9 is absorption spectrum when the surface photovoltage optical sensor of the embodiment of the present invention two is immersed in water and alcohol respectively
Calculated result.
Figure 10 is that the electric field of the RESONANCE ABSORPTION surface modes of the surface photovoltage optical sensor of the embodiment of the present invention two cuts open
EDS maps.
Figure 11 is absorption power of the surface photovoltage optical sensor of the embodiment of the present invention two at resonant absorption wavelengths
Density profile distribution.
Wherein: 1-substrate；2-conductive reflectives；3-dielectric layers；4-nanostructured layers；5-incident lights.
Specific embodiment
For a better understanding of the technical solution of the present invention, the implementation that the present invention is described in detail provides with reference to the accompanying drawing
Example, embodiments of the present invention are not limited thereto.
What the nanostructured layers from top to bottom of optical sensor of the present invention, dielectric layer and three layers of conductive reflective had both been constituted
The structure of similar capacity plate antenna also constitutes structure optically with RESONANCE ABSORPTION.Consider from electrical point, top layer nano junction
Structure layer and bottom conductive reflective can be conductive, and dielectric layer plays insulating effect, and similar capacity plate antenna generates induced potential.It is passed
When sensing examination, determinand is located on nanostructured layers, and the refractive index of determinand, which changes, causes the variation of RESONANCE ABSORPTION, in turn
It causes nanostructured layers electron concentration to change, induced potential is caused to change, and then pass through the mutation analysis determinand of potential.
Embodiment one
As shown in Figure 1, a kind of surface photovoltage optical sensor, preparation process are as follows:
Conductive reflective 2 is prepared in 1 upper surface of substrate, then in 2 upper surface preparation media layer 3 of conductive reflective, finally
Nanostructured layers 4 are prepared in 3 upper surface of dielectric layer.Wherein nanostructured layers 4 form nanometer circular hole periodic structure.Finally exist respectively
Lead completes the preparation of entire sensor to export electric signal in conductive reflective 2 and nanostructured layers 4.
The material of substrate is using quartz in the present embodiment；The material of conductive reflective is using silver, with a thickness of 200nm, in this way
Incident light does not transmit, and incident light part is absorbed by conductive reflective, is partially absorbed by nanostructured layers；The material of dielectric layer is adopted
With the composite layer of aluminium oxide and tin indium oxide, with a thickness of 125nm；For the material of nanostructured layers using gold, thickness is preferably 20nm,
And a nanometer circular hole periodic structure is formed, the radius referring to Fig. 2, period 320nm, circular hole is 60nm, and the depth of circular hole is
20nm.Conductive reflective, dielectric layer and nanostructured layers support RESONANCE ABSORPTION surface local area mode jointly.Referring to Fig. 3, can see
Arrive, at resonant wavelength 817nm, incident light occur 99.2% high-selenium corn, while as shown in figure 5, resonance wave strong point electric field
Local is in nanostructure layer surface, the variations in refractive index of perception measured object that can be highly sensitive.For example, when entire device submerges respectively
When in Yu Shui (refractive index 1.33) with alcoholic solution (refractive index 1.362), referring to Fig. 4, the central wavelength of RESONANCE ABSORPTION
846nm is moved on to from 843nm, body refractive index sensitivity is 94nm/RIU.When nanostructure layer surface is covered with the thin of 5nm thickness
When layer water, absorption spectrum is calculated referring to shown in Fig. 3, its surface density of the pellicular water of 5nm is 500ng/cm2, it can be seen that in wave
Absorptivity at long 817nm changes to 28.7% by 99.2%, variable quantity 70.5%.When with the monochrome of resonant wavelength 817nm
When light incidence, light absorption power density is as shown in Figure 6, it can be seen that the energy absorbed at this time is concentrated mainly on upper surface.This
When, the induced potential generated should be zero；When the wavelength of incident light is less than the wavelength of formant, nanostructured layers obtain electricity
Son, to make the induced potential generated less than zero；When the wavelength of incident light is greater than the wavelength of formant, nanostructured layers are lost
Electronics, so that the induced potential generated be made to be greater than zero.Using narrow band laser as monochromatic pumping light source, sensor and determinand
(red) move of subtle indigo plant that will lead to formant after effect will be in the variation for observantly showing electric potential signal.Pass through positive negative potential
Difference qualitative can identify test substance；And then quantitatively determinand can be measured according to potential change amplitude.
Embodiment two
As shown in fig. 7, a kind of surface photovoltage optical sensor, the preparation method phase of preparation method and embodiment one
Together, but the material of dielectric layer is using the composite layer of aluminium oxide and zinc oxide, and thickness is preferably 150nm；The material of nanostructured layers
Gold can be used, thickness is preferably 120nm, and forms a nanometer circular hole periodic structure, and the radius of period 800nm, circular hole are
200nm, the depth of circular hole are 100nm.The thickness of nanostructured layers is sufficiently thick at this time, and rarely transmitted light passes through nanostructure
Layer, incident light are absorbed by nanostructured layers substantially.Nanostructured layers and medium interlayer form surface plasma wave at this time, also have
RESONANCE ABSORPTION, only nanostructured layers have light absorption substantially here.
Conductive reflective, dielectric layer and nanostructured layers support RESONANCE ABSORPTION surface local area mode jointly.Referring to Fig. 9 and figure
10, it can be seen that at resonant wavelength 835nm, 82.6% high-selenium corn, while the electric field office of resonance wave strong point occur for incident light
Domain can perceive the variations in refractive index of measured object in nanostructure layer surface with sensitivity.When entire device is immersed in water (folding respectively
Penetrate rate be 1.33) in alcoholic solution (refractive index 1.362) when, the central wavelength of RESONANCE ABSORPTION is moved on to from 1091nm
1126nm, body refractive index sensitivity are 1094nm/RIU；When with the monochromatic light incidence of resonant wavelength 835nm, light absorption
Power density is as shown in figure 11, and the energy absorbed all concentrates on upper surface, at this point, its induced potential generated should be zero；
When the wavelength of incident light is not equal to resonant wavelength, the light induced electron generated in nanostructured layers can effectively improve induced potential,
Wherein when the wavelength of incident light is less than the wavelength of formant, nanostructured layers obtain electronics, to make the induced potential generated
Less than zero；When the wavelength of incident light is greater than the wavelength of formant, nanostructured layers lose electronics, to make the induced electricity generated
Gesture is greater than zero.Using narrow band laser as monochromatic pumping light source, operation wavelength is the resonant positions of metal Nano structure,
Induced potential is zero as initial reference potential at this time；It will lead to subtle blue (red) of formant after sensor and determinand effect
Shifting will be in the variation for observantly showing electric potential signal.Qualitative test substance can be identified by the difference of positive negative potential；
And then quantitatively determinand can be measured according to potential change amplitude.
In addition, passing through the material of nanostructured layers, the dielectric layer and the conductive reflective described in numerical simulation of optimum
Structural parameters, it can be achieved that resonance wave strong point hypersorption.
Surface photovoltage optical sensor of the invention organically combines optical sensing and photoelectric conversion in a device
In, the working method of direct electric signal output is realized, significantly improves the portability of sensor-based system, and by by conducting reflective
Layer, dielectric layer and nanostructured layers are formed together capacity plate antenna structure, and support electromagnetic field local in nanostructure layer surface
RESONANCE ABSORPTION mode enhances sensing capabilities simultaneously in terms of photoelectric conversion and light sensing two, in addition, the operation wavelength of this device
Range is no longer limited by the energy band limitation of conventional semiconductor material, and is determined by the wavelength of RESONANCE ABSORPTION mode, realizes big work
Wave-length coverage.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of optical sensor characterized by comprising substrate from bottom to top, conductive reflective and are received insulating medium layer
Rice structure sheaf；The nanostructured layers are metalline material, and are prepared as optical grating construction；Conductive reflective and nanostructure
Interlayer has electrical connection.
2. optical sensor according to claim 1, which is characterized in that the material of the conductive reflective include gold, platinum,
At least one of silver, copper, aluminium, titanium, nickel, chromium, titanium nitride and zirconium nitride.
3. optical sensor according to claim 2, which is characterized in that the thickness of the conductive reflective is greater than 100 and receives
Rice.
4. optical sensor according to claim 1, which is characterized in that the dielectric layer is for insulation material layer or by transparent
The composite layer of conductive oxide and insulating materials composition.
5. optical sensor according to claim 4, which is characterized in that the insulating materials includes silica, nitridation
At least one of silicon, aluminium oxide, hafnium oxide, magnesium fluoride, organic insulation polymer.
6. optical sensor according to claim 4, which is characterized in that the thickness of the transparent conductive oxide is less than
200 nanometers.
7. optical sensor according to claim 1, which is characterized in that the material of the nanostructured layers include gold, platinum,
At least one of silver, copper, aluminium, titanium, nickel, chromium, titanium nitride, zirconium nitride and graphene.
8. optical sensor according to claim 7, which is characterized in that the thickness of the nanostructured layers is received less than 200
Rice.
9. optical sensor according to claim 7, which is characterized in that the nanostructured layers be One Dimension Periodic structure or
Person's two-dimensionally periodic structure.
10. optical sensor according to claim 7, which is characterized in that the period of the nanostructured layers is the light
0.2 times~2 times for learning working sensor wave-length coverage central wavelength.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910495464.7A CN110346326B (en) | 2019-06-10 | 2019-06-10 | Optical sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910495464.7A CN110346326B (en) | 2019-06-10 | 2019-06-10 | Optical sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110346326A true CN110346326A (en) | 2019-10-18 |
| CN110346326B CN110346326B (en) | 2022-11-11 |
Family
ID=68181669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910495464.7A Active CN110346326B (en) | 2019-06-10 | 2019-06-10 | Optical sensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110346326B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111735799A (en) * | 2020-07-02 | 2020-10-02 | 燕山大学 | Guided wave surface plasma resonance sensor |
| WO2022165937A1 (en) * | 2021-02-04 | 2022-08-11 | 苏州大学 | Optical sensing apparatus for direct readout of electrical signal, and manufacturing method therefor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102696114A (en) * | 2010-01-07 | 2012-09-26 | 夏普株式会社 | Photoelectric transducer |
| CN104851929A (en) * | 2015-04-02 | 2015-08-19 | 中国人民解放军国防科学技术大学 | Photoelectric material adjustable absorption enhancing layer based on graphene surface plasmon |
| CN109524486A (en) * | 2018-09-28 | 2019-03-26 | 暨南大学 | A kind of electrical readout optical sensor |
-
2019
- 2019-06-10 CN CN201910495464.7A patent/CN110346326B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102696114A (en) * | 2010-01-07 | 2012-09-26 | 夏普株式会社 | Photoelectric transducer |
| CN104851929A (en) * | 2015-04-02 | 2015-08-19 | 中国人民解放军国防科学技术大学 | Photoelectric material adjustable absorption enhancing layer based on graphene surface plasmon |
| CN109524486A (en) * | 2018-09-28 | 2019-03-26 | 暨南大学 | A kind of electrical readout optical sensor |
Non-Patent Citations (2)
| Title |
|---|
| HAMIDREZA CHALABI ET AL: ""Hot-Electron Photodetection with a a Plasmonic Nanostripe Antenna"", 《NANO LETTERS》 * |
| LINLONG TANG ETAL: "Complete optical asborption in graphene by using nano-gratings to excite graphence surface plasmons", 《MICROELECTRONIC ENGINEERING》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111735799A (en) * | 2020-07-02 | 2020-10-02 | 燕山大学 | Guided wave surface plasma resonance sensor |
| WO2022165937A1 (en) * | 2021-02-04 | 2022-08-11 | 苏州大学 | Optical sensing apparatus for direct readout of electrical signal, and manufacturing method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110346326B (en) | 2022-11-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Wen et al. | Multiband and ultrahigh figure-of-merit nanoplasmonic sensing with direct electrical readout in Au-Si nanojunctions | |
| CN103776790B (en) | A kind of infrared spectrum based on graphene nano antenna strengthens and detection method and device | |
| CN108572162B (en) | Terahertz waveband metamaterial sensor based on quasi-electromagnetic induced transparency effect | |
| CN110530820B (en) | Dual-waveband plasmon sensor based on gold nano-antenna/graphene structure | |
| CN104795410A (en) | Graphene nanoribbon array terahertz sensor based on optical waveguide | |
| CN111060466B (en) | Portable optical gas sensor | |
| CN110346326A (en) | A kind of optical sensor | |
| US11362233B2 (en) | Electrical readout optical sensor | |
| Yang et al. | Hybrid modes in plasmonic cavity array for enhanced hot-electron photodetection | |
| Sui et al. | Simultaneously performing optical and electrical responses from a plasmonic sensor based on gold/silicon Schottky junction | |
| Kim et al. | Single-layer metamaterial bolometer for sensitive detection of low-power terahertz waves at room temperature | |
| Hernández et al. | Prism-based surface plasmon resonance for dual-parameter sensing | |
| Guo et al. | Time-frequency double domain resolving by electromagnetically induced transparency metasensors for rapid and label-free detection of cancer biomarker midkine | |
| CN2589968Y (en) | Multifunctional photoelectric parameter measuring device | |
| CN110361349B (en) | Multi-channel infrared spectrum detector based on integrated circuit technology and preparation method thereof | |
| CN109490279A (en) | The rotary SPR sensorgram chip of D-shaped microtrabeculae mirror | |
| CN102393380A (en) | Surface plasma resonance sensor | |
| Lotfiani et al. | Monolithic silicon-based photovoltaic-nanoplasmonic biosensor with enhanced limit of detection and minimum detectable power | |
| CN110261350A (en) | A kind of optical sensor system and sensing testing method | |
| CN113406017A (en) | High-integration surface plasma resonance sensor system | |
| CN105181605B (en) | A kind of spectrometer based on Bragg reflection effect | |
| CN103575221B (en) | A kind of measuring method of multialkali photocathode thicknesses of layers measuring system | |
| Ma et al. | Hybrid plasmonic biosensor for simultaneous measurement of both thickness and refractive index | |
| Gao et al. | Seawater refractive index sensor based on a cascaded double grating structure | |
| Wei et al. | Performance evaluation of bimetallic surface plasmon resonance biosensor based on copper and MXene (Ti3C2Tx) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |