CN110361349B - Multi-channel infrared spectrum detector based on integrated circuit technology and preparation method thereof - Google Patents
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- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
Abstract
The invention discloses a multi-channel infrared spectrum detector based on an integrated circuit process and a preparation method thereof. The detector comprises a plurality of detection array units and microbolometers, wherein the detection array units are composed of metal surface plasmon structures; the metal surface plasmon structure adopts metal cylinders which are arranged in a square cycle, and air is arranged around the metal cylinders; the microbolometer comprises a bridge pier, a bridge arm, an infrared absorber and a thermistor; the metal surface plasmon structure is deposited on an infrared absorber of the microbolometer; the parameters of the metal surface plasmon structures of the plurality of detection array units are different. The invention integrates modules such as a metal surface plasmon structure, an infrared detector and the like on the same infrared detector array chip through an integrated circuit process, can obtain detection signal light information of different wavelengths, can realize simultaneous detection of signals of various wavelengths, and has the advantages of simple structure, convenience for integration, low cost and the like.
Description
Technical Field
The invention relates to the field of infrared signal detection, in particular to an infrared spectrum detector integrated with a light splitting element based on an integrated circuit process and a preparation method thereof.
Background
The infrared spectrum is classified into near infrared (wavelength range of 0.75 to 2.5 μm), mid infrared (wavelength range of 2.5 to 25 μm) and far infrared (wavelength range of 25 to 300 μm) according to the relationship between the infrared spectrum and visible light. In organic molecules, the vibration frequency of atoms forming chemical bonds or functional groups is equivalent to the frequency of infrared light, and the infrared spectrum obtained by irradiating the organic molecules with the infrared light can be used for detecting information of various chemical bonds and functional groups of the organic molecules; the absorption intensity of the infrared absorption band is related to the content of chemical groups, and can be used for quantitative analysis and purity identification; the infrared spectrum has quite wide applicability to samples, can be applied to solid, liquid or gaseous samples, and can detect inorganic, organic and high molecular compounds; the infrared spectrum also has wide application in the research of the configuration, conformation and mechanical property of high polymers and the fields of physics, astronomy, meteorology, remote sensing, biology, medicine and the like.
The traditional infrared spectrum detection system is a dispersion type infrared spectrum detection system, and the principle of the system is that incident infrared light is separated according to wavelength by rotating dispersion devices (such as gratings, prisms and the like) and is detected by an infrared detector in sequence to obtain the spectral distribution of a signal to be detected. Such spectral analysis systems are single channel measurements, i.e. only one narrow band spectral element is measured at a time, and the scanning speed is slow, which greatly limits the detection efficiency of such optical analysis instruments.
The principle of the multi-channel near infrared spectrum detection system is that light emitted by a light source passes through a sample and is split by a holographic grating, the grating does not need to rotate, and the light dispersed by the grating is focused on a focal plane of a multi-channel detector and is detected at the same time, so that the infrared spectrum distribution is obtained. The multi-channel detector of the system has two types: one is a diode array (PDA) detector and the other is a charge coupled array (CCD) detector. The infrared spectrum analyzer has the advantages that a complete infrared spectrum is contained in single measurement, the detection efficiency is high, the light path is fixed, no moving part is arranged in the system, and the stability and the wavelength precision are high. However, the cost of the CCD detector and the PDA detector is very expensive, and the current multi-channel infrared detection system can only work in the near infrared band, thereby greatly limiting the application field.
For the detection of the medium and far infrared spectrums, a fourier infrared spectrometer (FTIR) designed based on the principle of optical coherence is the most common at present, and the principle is that the spectral distribution of a sample to be detected can be obtained by performing fourier transform on interfered infrared light through single measurement. The spectrometer has the advantages of large luminous flux, wide spectral range, high resolution, high scanning speed and the like, but the core component of the spectrometer is an interferometer with extremely high requirements on processing precision, the requirements on the working environment are very strict, a small amount of jitter can cause larger detection errors, the stability is poor, the manufacturing cost is high, the volume is larger, and the popularization in the industry is difficult. In order to make the infrared spectrum detection instrument have lower cost, higher efficiency and smaller volume, a multi-channel infrared detection chip capable of simultaneously realizing light splitting and optical signal detection has become the main development trend of the existing infrared spectrum detector.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides an infrared spectrum detector which integrates light splitting elements and realizes multi-channel simultaneous detection based on an integrated circuit process and a preparation method thereof.
The technical scheme adopted by the invention for solving the technical problem is as follows:
the multi-channel infrared spectrum detector based on the integrated circuit process comprises a plurality of detection array units and a microbolometer, wherein the detection array units are composed of metal surface plasmon structures; the metal surface plasmon structure adopts metal cylinders which are arranged in a square cycle, and air is arranged around the metal cylinders; the microbolometer comprises a bridge pier, a bridge arm, an infrared absorber and a thermistor; the metal surface plasmon structure is deposited on an infrared absorber of the microbolometer; the parameters of the metal surface plasmon structures of the plurality of detection array units are different.
Preferably, the period of the metal surface plasmon structure is 7 to 12 μm, the diameter of the metal cylinder is 5 to 10 μm, and the height is 2.17 μm.
Preferably, the material of the metal cylinder is aluminum.
The invention discloses a method for preparing the multi-channel infrared spectrum detector based on the integrated circuit technology, which comprises the following specific steps: in the integrated circuit process, a layer of metal cylinders in square periodic arrangement is deposited on an infrared absorber of a microbolometer, then a silicon dioxide layer with the same thickness as the cylinders is deposited around the metal cylinders, the silicon dioxide layer is etched by using an inductive coupling plasma etching method, the etching speed is 140nm/min, the etching time is 15.5min, and the metal cylinders in square periodic arrangement can be formed, wherein air is arranged around the metal cylinders.
Wherein, the process steps of the microbolometer are as follows:
(1) depositing a silicon dioxide layer with the thickness of 0.85 mu m above the metal sacrificial layer of the fourth layer of the integrated circuit, depositing a metal aluminum with the thickness of 0.53 mu m and the shape of S on the silicon dioxide layer to be used as a thermistor of the microbolometer, and finally depositing a silicon dioxide layer with the thickness of 1 mu m on the thermistor to be used as an infrared absorber of the microbolometer;
(2) coating photoresist with a fixed thickness on the microbolometer, covering a mask plate capable of protecting the infrared absorber, the supporting arm and the bridge pier above the photoresist, and then performing exposure and development;
(3) etching the unprotected silicon dioxide area by an ICP etching method, wherein the etching speed is 140nm/min, and the etching time is 30.5 min;
(4) placing the microbolometer in an etching solution composed of 10ml of water, 80ml of phosphoric acid, 5ml of acetic acid and 5ml of nitric acid to etch off the metal sacrificial layer on the fourth layer, wherein the etching time is 40 min;
(5) and finally, sequentially cleaning redundant corrosive liquid and photoresist by using water and acetone to form a heat-insulating air cavity.
The detection mechanism of the detector structure of the invention is as follows: the infrared light is incident on the metal surface plasmon structure, and after the surface plasmon is excited at the interface between the metal and the air, only the incident infrared light with a specific narrow frequency can penetrate through the metal structure through the surface plasmon resonance. The transmitted infrared light is absorbed by the absorber of the microbolometer, converted into heat and transmitted to the thermistor of the external constant current source to cause the change of the resistance, thereby outputting a voltage signal which is strongly related to the infrared light signal and realizing the detection of the transmitted infrared light.
The mechanism of narrow-band transmission of the metal surface plasmon structure to infrared wavelengths is as follows: when infrared light is incident to the metal surface plasmon structure, if the incident wavelength satisfies the wave vector matching condition at the metal/dielectric material (such as air) interface, surface plasmons can be generated at the interface. Evanescent waves generated by excitation of surface plasmons couple energy to the lower surface of the metal through collective oscillation of electrons in the metal to form surface evanescent waves, and transmittable infrared light is formed through a reradiation process and is radiated from the lower surface, so that the phenomenon of extraordinary transmission is called. That is, the infrared light transmission efficiency in the vicinity of the surface plasmon excitation wavelength is greatly enhanced. Assuming that infrared light is perpendicularly incident to the metal surface plasmon structure, the excitation wavelength of the surface plasmon is:
wherein u isxAnd uyThe unit reciprocal lattice vectors of the periodic structure in the x and y directions, i and j being integers corresponding to different diffraction orders, εdAnd εmrIs the real part of the dielectric constant of the metal and the surrounding medium on the upper surface of the metal, axAnd ayIs the period of the metal surface plasmon structure in the x and y directions. Therefore, the excitation wavelength of the surface plasmon can be adjusted by changing the period of the metal surface plasmon structure, namely, the central wavelength of the transmission region of the metal surface plasmon structure is changed, and selective transmission to different narrow frequencies is realized.
The invention has the beneficial effects that:
(1) the multi-channel infrared spectrum detector is combined with a standard integrated circuit process technology, can realize high integration of functions, is low in power consumption and has the advantage of cost.
(2) Utilize low-cost, ripe integrated circuit technology, integrated beam splitting component and infrared detector use metal surface plasmon structure to replace traditional optics beam splitting component to the same chip, realize the function of beam splitting equally to can detect the infrared light signal of multiple wavelength simultaneously, reduce manufacturing cost, improve the stability of detector.
(3) The multi-channel infrared spectrum detector has simple structure and convenient integration, can greatly reduce the volume of an infrared spectrum detecting instrument, and is favorable for realizing the miniaturization and the miniaturization of an infrared spectrum detecting system.
(4) The invention adopts the aluminum column surface plasmon structure arranged in a square shape, and the structure has high transmissivity to infrared light, narrow transmission wave band and lower polarization dependence.
Drawings
FIG. 1 is a schematic diagram of a multi-channel infrared spectrum detector according to an embodiment of the present invention.
Fig. 2 is a schematic view of a metal surface plasmon structure according to an embodiment of the present invention, wherein (a) is a top view and (b) is a side view.
Fig. 3 is a schematic structural view of a microbolometer according to an embodiment of the present invention, wherein (a) a top view and (b) a side view are shown.
Fig. 4 is an infrared transmission diagram of a metal surface plasmon structure in an embodiment of the present invention.
FIG. 5 is a schematic representation of an infrared spectroscopy system formed from a multi-channel infrared spectroscopy detector in an embodiment of the invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, embodiments of the present invention will be described in detail with reference to the accompanying drawings. It is to be understood that the described embodiments are merely a subset of the embodiments of the invention and not all embodiments. The described embodiments are to be considered in all respects only as illustrative and not restrictive. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, the multi-channel infrared spectrum detector 105 based on the integrated circuit process of the present embodiment includes four detection array units composed of metal surface plasmonic structures 103 and a microbolometer 104. The metal surface plasmon structure 103 can realize narrow-band transmission of infrared wavelength, and the infrared transmission wavelength can be adjusted by changing the period of the metal surface plasmon structure 103. The metal surface plasmons 103 structures with different transmission wavelengths are designed in the same array detector structure, so that the simultaneous detection of signals with various wavelengths is realized. After the infrared light 101 irradiates the sample 102, the metal surface plasmon structure 103 selects infrared light with different narrow frequencies to transmit to the microbolometer 104, and thus infrared light signals with different wavelengths can be detected simultaneously.
As shown in fig. 2, which is a schematic structural diagram of the detection array unit in this embodiment, metal aluminum pillars 201 are grown on an absorber 203 of the microbolometer in a two-dimensional square arrangement, and air 202 is around the aluminum pillars 201. Wherein, P is the period of the aluminum columns, D is the diameter of the aluminum columns, and H is the height of the aluminum columns. The present embodiment uses the aluminum column surface plasmon structures arranged in a square shape to replace the traditional optical light splitting element, and the light splitting function is also realized, but the cost is greatly reduced, the stability is improved, and the present embodiment can be compatible with the integrated circuit process, and is integrated on an infrared detector to form a multi-channel infrared spectrum array detector.
Fig. 3 is a schematic view of a microbolometer structure, which is a microbridge structure. In a top view, the microbolometer comprises a bridge pier 302, a bridge arm 301, an infrared absorber 304 and a thermistor 303, wherein the bridge pier 302 is used for externally connecting a reading circuit and supporting a detector structure, and the bridge arm 301 is used for supporting the infrared absorber 304 and realizing thermal isolation of pixels.
The embodiment provides a multi-channel infrared spectrum detector based on a 0.18 mu mCMOS standard integrated circuit process. The metal surface plasmon polariton structure 103 of this embodiment is made of the sixth layer of metal aluminum in the integrated circuit process, in which a layer of metal aluminum pillars with a thickness of 2.17 μm are deposited in a square arrangement on the infrared absorber 304 of the microbolometer, and silicon dioxide with a thickness of 2.17 μm is deposited around the aluminum pillars, which are compatible with the integrated circuit process. And etching the silicon dioxide layer by an inductive coupling plasma etching method, wherein the etching speed is 140nm/min, the etching time is 15.5min, the aluminum columns 201 arranged in a square shape can be formed, and air 202 is arranged around the aluminum columns 201. The ICP etching method does not etch aluminum, a series of processes such as extra mask plate manufacturing, photoresist coating, exposure and development are not needed to protect the aluminum column, and the process steps for forming the aluminum column structure are greatly simplified.
The process for preparing the microbolometer comprises the following steps: a fourth layer of metallic aluminum with a thickness of 0.53 μm is a sacrificial layer 309, and a layer of SiO with a thickness of 0.85 μm is deposited on the sacrificial layer 3092 Layer 307 of SiO2Depositing a layer of S-shaped aluminum with the thickness of 0.53 μm as the thermistor 303 of the microbolometer, increasing the resistance of the thermistor by the designed S-shaped aluminum strip, and finally depositing a layer of SiO with the thickness of 1 μm on the thermistor 3032 Layer 305, which acts as an infrared absorber 304 for the microbolometer, is compatible with integrated circuit processes. Manufacturing a mask plate capable of protecting the infrared absorber 304, the supporting arm 301 and the bridge pier 302, coating photoresist with a fixed thickness on the microbolometer, and then covering the mask plate on the photoresist for exposure, development and other steps. Etching the unprotected silicon dioxide area by ICP etching method, the etching speed is 140nm/min, and the etching time is 30.5 min. And then putting the microbolometer into an etching solution consisting of 10ml of water, 80ml of phosphoric acid, 5ml of acetic acid and 5ml of nitric acid to etch away the fourth layer of metal aluminum, wherein the etching time is 40min, and finally, washing away redundant etching solution and photoresist by water and acetone in sequence to form an insulated air cavity 308.
When the wavelength of incident infrared light is near the surface plasmon excitation wavelength, the energy of the infrared light penetrating through the metal surface plasmon structure 103 is greatly enhanced, namely, the transmission is enhanced, the transmitted light is absorbed by an infrared absorber 304 of the microbolometer, converted into heat and transmitted to a thermistor 303 of an external constant current source, a voltage signal related to the transmitted infrared light intensity is output, the metal surface plasmon structure 103 with different surface plasmon excitation wavelengths and the microbolometer 104 form a multi-channel detector 105, the simultaneous detection of the infrared light with different wavelengths can be realized, and the infrared spectrum containing a plurality of wavelength components is obtained. In the present embodiment, the periods P of the four designed metal surface plasmon structures 103 are respectively: 8 μm, 9 μm, 10 μm and 11 μm, the diameters D of the corresponding aluminum pillars 201 are: 6.4 μm, 6.8 μm, 8.4 μm and 9.2 μm, the height of the aluminum column 201 is 2.17. mu.m.
By using advanced optical simulation software, logical FDTD Solutions, four metal surface plasmon structure models are established according to the parameters of the four designed metal surface plasmon structures 103, and a series of solving calculations are carried out. Fig. 4 is an infrared transmission diagram of four metal surface plasmon structures. As can be seen from the figure, the four metal surface plasmon structures have transmission peaks in a bandwidth of 8 μm to 14 μm, and each structure has a transmittance of more than 80% at an excitation wavelength. The optical density value is an important parameter for representing the quality of a transmission peak, and the expression is OD (lg) (T)Permeable belt/TStop belt) Wherein T isPermeable beltExpressed is the average transmission, T, over the half-peak wavelength range of the transmission peakStop beltIndicating an average transmittance outside the half-peak wavelength range of the transmission peak, the optical density values OD of which are greater than 0.4 for all four metal surface plasmon structures 103. The SNR of crosstalk noise caused by adjacent channels, namely transmission peaks, is more than 4 dB. The bandwidth of the infrared spectrum detectable by the array infrared detector integrated by the four metal surface plasmon structures 103 and the microbolometer 104 is 6 μm. Therefore, the four metal surface plasmon structures completely meet the design requirements in the aspects of crosstalk, bandwidth, transmission peak intensity and the like.
Fig. 5 shows an infrared spectroscopy system formed using the multi-channel infrared spectroscopy detector described above, the system comprising: the system comprises an infrared light source 501, a condenser lens 502, a sample to be detected 503, an area array infrared detector 504, a data processing system 506 and a display 507. The infrared light source 501 emits a bundle of dispersed infrared light, the infrared light irradiates a sample 503 to be detected through the condenser lens 502, the transmitted light enters the condenser lens and then is converged to the area array infrared detector 504, the infrared detection array unit 505 consists of the metal surface plasmon structure 103 and the micro bolometer 104, each independent channel of the area array infrared detector 504 can simultaneously detect infrared light signals with various wavelengths, a proper constant current source is added at two ends of the thermistor 303 during work, and only infrared light with a specific narrow waveband can be absorbed by the infrared absorber 304 of the micro bolometer after the infrared light penetrates through the metal surface plasmon structure 103; the heat generated by the absorber is transferred to the thermistor 303 to cause the change of the resistance, and then a voltage signal related to the intensity of the transmitted infrared light can be output; a set of voltage signals is transmitted to the data processing system 506, and the processed infrared light signals are input to the display 507, so that an infrared spectrum containing a plurality of wavelength components can be obtained.
Claims (3)
1. The preparation method of the multi-channel infrared spectrum detector based on the integrated circuit technology comprises the following steps that the detector comprises a plurality of detection array units and a microbolometer, wherein the detection array units are composed of metal surface plasmon structures; the metal surface plasmon structure adopts metal cylinders which are arranged in a square cycle, and air is arranged around the metal cylinders; the microbolometer comprises a bridge pier, a bridge arm, an infrared absorber and a thermistor; the metal surface plasmon structure is deposited on an infrared absorber of the microbolometer; the parameters of the metal surface plasmon structures of the plurality of detection array units are different; the method is characterized in that the metal surface plasmon polariton structure is made of a sixth layer of metal aluminum in an integrated circuit process, in the integrated circuit process, a layer of metal cylinders arranged in a square periodic manner is deposited on an infrared absorber of a microbolometer, then a silicon dioxide layer with the same thickness as the cylinders is deposited around the metal cylinders, and the silicon dioxide layer is etched by using an inductive coupling plasma etching method, so that the metal cylinders arranged in the square periodic manner can be formed;
the process steps of the microbolometer are as follows:
(1) depositing a silicon dioxide layer above the metal sacrificial layer of the fourth layer of the integrated circuit, depositing a layer of S-shaped metal aluminum on the silicon dioxide layer to serve as a thermistor of the microbolometer, and finally depositing a silicon dioxide layer on the thermistor to serve as an infrared absorber of the microbolometer;
(2) coating photoresist with a fixed thickness on the microbolometer, covering a mask plate capable of protecting the infrared absorber, the supporting arm and the bridge pier above the photoresist, and then performing exposure and development;
(3) etching the unprotected silicon dioxide area by an ICP etching method, wherein the etching speed is 140nm/min, and the etching time is 30.5 min;
(4) placing the microbolometer in an etching solution composed of 10ml of water, 80ml of phosphoric acid, 5ml of acetic acid and 5ml of nitric acid to etch off the metal sacrificial layer on the fourth layer, wherein the etching time is 40 min;
(5) and finally, sequentially cleaning redundant corrosive liquid and photoresist by using water and acetone to form a heat-insulating air cavity.
2. The method according to claim 1, wherein the period of the metal surface plasmon structure is 7 to 12 μm, the diameter of the metal cylinder is 5 to 10 μm, and the height is 2.17 μm.
3. The production method according to claim 1, wherein in the step (1), the thickness of the metallic aluminum is 0.53 μm, and the thickness of the infrared absorber is 1 μm.
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