CN2589968Y - Multifunctional photoelectric parameter measuring device - Google Patents

Multifunctional photoelectric parameter measuring device Download PDF

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CN2589968Y
CN2589968Y CN 02294293 CN02294293U CN2589968Y CN 2589968 Y CN2589968 Y CN 2589968Y CN 02294293 CN02294293 CN 02294293 CN 02294293 U CN02294293 U CN 02294293U CN 2589968 Y CN2589968 Y CN 2589968Y
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light
sample chamber
detector
lock
amplifier
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李德林
耿新华
薛俊明
赵颖
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KUNMING APOLLO YUANHONG ENERGY SCIENCE & TECHNOLOGY Co Ltd
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Nankai University
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Abstract

本实用新型公开了一种多功能光电参数测量装置。解决了现有仪器垂直入射光条件下不能测量光反射率R、测量功能单一等问题。技术方案:光源与单色仪相连,在单色仪输出狭缝处安装斩波器,斩波器输出端设置半透半反镜M,在透射光路中有一聚焦透镜,焦点在样品室内;样品室的一侧且与透射光束相垂直处安装激光器,另一侧安装位置敏感探测器;样品室与激光器之间和样品室与位置敏感探测器之间分别安装有聚焦透镜,在反射光路上设置光探测器;光探测器和位置敏感器的输出分别与锁相放大器的输入相连,锁相放大器的输出与计算机的输入相连。实现一机多功能。能节省大量的设备资金、实验室场地及维护管理方面的人力资源。

Figure 02294293

The utility model discloses a multifunctional photoelectric parameter measuring device. It solves the problems that the existing instrument cannot measure the light reflectance R under the condition of vertical incident light, and the measurement function is single. Technical solution: the light source is connected to the monochromator, a chopper is installed at the output slit of the monochromator, a half-transparent mirror M is installed at the output end of the chopper, and a focusing lens is placed in the transmitted light path, the focus is in the sample chamber; the sample A laser is installed on one side of the chamber perpendicular to the transmitted light beam, and a position-sensitive detector is installed on the other side; focusing lenses are respectively installed between the sample chamber and the laser and between the sample chamber and the position-sensitive detector, and are set on the reflected light path. a light detector; the outputs of the light detector and the position sensor are respectively connected with the input of the lock-in amplifier, and the output of the lock-in amplifier is connected with the input of the computer. Realize one machine with multiple functions. It can save a lot of equipment funds, laboratory space and human resources in maintenance and management.

Figure 02294293

Description

多功能光电参数测量装置Multifunctional Photoelectric Parameter Measuring Device

所属技术领域Technical field

本实用新型涉及一种材料光学、电学性能的测量装置。The utility model relates to a measuring device for optical and electrical properties of materials.

背景技术Background technique

目前,测量材料光电参数的仪器,在垂直入射光条件下不能测量材料的光反射率R,不能检测半导体光电材料的微量光吸收,而且测量功能单一。如现有的分光光度计,只能在有限范围内测量光的透射率、反射率;另外,在不同角度测量薄膜材料的光透过率T、光反射率R时,二者不是相关数据;尤其是在存在干涉的情况下,测量数据可能产生T+R≥1的情况,使光吸收出现不合理的负值。再如,光电导谱仪只能测量材料的光电导参数,其测量功能单一,测量不同的参数就需要各自不同的仪器。这样,不仅浪费设备资金、实验室场地,而且在维护管理方面也造成人力资源的浪费。At present, the instruments for measuring the photoelectric parameters of materials cannot measure the light reflectance R of materials under the condition of vertical incident light, and cannot detect the small amount of light absorption of semiconductor photoelectric materials, and the measurement function is single. For example, the existing spectrophotometer can only measure the transmittance and reflectance of light within a limited range; in addition, when measuring the light transmittance T and light reflectance R of thin film materials at different angles, the two are not relevant data; Especially in the case of interference, the measurement data may produce a situation of T+R≥1, which makes the light absorption appear unreasonably negative. Another example is that a photoconductive spectrometer can only measure the photoconductive parameters of materials, and its measurement function is single, so different instruments are required to measure different parameters. In this way, not only equipment funds and laboratory space are wasted, but also human resources are wasted in maintenance and management.

实用新型内容Utility model content

本实用新型是为了解决上述缺陷而设计的,其目的是提供一种在垂直入射光条件下能测量材料的光反射率R,集多种测量于一体,节约实验室空间和成本、加快测量速度和降低实验开支的多功能光电参数测量装置。The utility model is designed to solve the above-mentioned defects, and its purpose is to provide a light reflectance R that can measure the material under the condition of vertical incident light, which integrates multiple measurements, saves laboratory space and cost, and speeds up the measurement. And a multifunctional photoelectric parameter measuring device that reduces experimental expenses.

本实用新型的技术方案是:主要包括光源、单色仪、斩波器、光探测器、位置敏感器、锁相放大器、计算机、半透半反镜、激光器与样品室构成;光源与单色仪相连,在单色仪的输出狭缝处安装斩波器,在斩波器输出端的光路中设置一个半透半反镜M,在透射光束的光路中有一聚焦透镜,焦点在样品室内;在样品室的一侧且与透射光束相垂直处安装激光器,另一侧安装位置敏感探测器;样品室与激光器之间和样品室与位置敏感探测器之间分别安装有聚焦透镜,在反射光路上设置光探测器;光探测器和位置敏感器的输出端分别与锁相放大器的输入端相连,锁相放大器的输出端与计算机的输入端相连。The technical scheme of the utility model is: mainly comprising a light source, a monochromator, a chopper, a light detector, a position sensor, a lock-in amplifier, a computer, a semi-transparent mirror, a laser and a sample chamber; the light source and the monochromator Connect to the instrument, install a chopper at the output slit of the monochromator, set a half-transparent mirror M in the optical path of the output end of the chopper, and a focusing lens in the optical path of the transmitted beam, the focus is in the sample chamber; A laser is installed on one side of the sample chamber perpendicular to the transmitted light beam, and a position-sensitive detector is installed on the other side; focusing lenses are respectively installed between the sample chamber and the laser and between the sample chamber and the position-sensitive detector, and on the reflected light path A photodetector is set; the output terminals of the photodetector and the position sensor are respectively connected with the input terminals of the lock-in amplifier, and the output terminals of the lock-in amplifier are connected with the input terminals of the computer.

本实用新型的有益效果是:由于在光路中增设了半透半反镜(它可进行分光束),且半透半反镜与入射光成45°角。因此,可以在垂直入射光条件下测量材料的光反射率R。在测量具有干涉性能光电薄膜材料的光反射率R时,能保证与垂直入射光测量的透过率具有相关性,可以共同用于光学参数的计算,避免了二者不是相关数据、测量数据可能T+R≥1、光吸收出现不合理的负值等情况;该装置同时还可以测量材料的电学、电子学参数,如光电导谱、光电池量子效率和光热偏转谱,集多种测量于一体,实现一机多功能。这样,能节省大量的设备资金、实验室场地及维护管理方面的人力资源。The beneficial effects of the utility model are: due to the addition of a half-mirror (which can split beams) in the light path, and the half-mirror forms an angle of 45° with the incident light. Therefore, the light reflectance R of the material can be measured under the condition of normal incident light. When measuring the light reflectance R of photoelectric thin film materials with interference properties, it can ensure that there is a correlation with the transmittance measured by vertically incident light, and can be used for the calculation of optical parameters, avoiding that the two are not related data, and the measurement data may be T+R≥1, unreasonable negative value of light absorption, etc.; the device can also measure the electrical and electronic parameters of materials, such as photoconductivity spectrum, photocell quantum efficiency and photothermal deflection spectrum. All in one, realizing one machine with multiple functions. In this way, a lot of equipment funds, laboratory space and human resources in maintenance and management can be saved.

附图说明Description of drawings

图1是本实用新型的光路及结构示意方框图。Fig. 1 is a schematic block diagram of the light path and structure of the utility model.

图2是本实用新型测量光透过率的光路及结构示意方框图。Fig. 2 is a schematic block diagram of the optical path and structure of the utility model for measuring light transmittance.

图3是应用本实用新型测量光反射率的光路及结构示意方框图。Fig. 3 is a schematic block diagram of the optical path and structure of the application of the utility model to measure the light reflectivity.

图4是应用本实用新型测量光电导谱和光电池量子效率测量的光路及结构示意方框图。Fig. 4 is a schematic block diagram of the optical path and structure for measuring the photoconductive spectrum and photocell quantum efficiency of the utility model.

具体实施方式Detailed ways

下面结合附图对本实用新型作进一步详细描述。Below in conjunction with accompanying drawing, the utility model is described in further detail.

如图1所示,光源采用组合光源,氘灯和卤钨灯及其可控电源;单色仪采用光栅单色仪,其输出单色波长为200nm~2500nm;光探测器采用真空热电堆、Si或PbS光探测器,光位置敏感器采用双光电二极管式光位置敏感器、锁相放大器采用EG & G 5208、激光器用He-Ne激光器;光源与单色仪相连,在单色仪的输出狭缝处安装斩波器,在斩波器输出端的光路中设置一个半透半反镜M,在透射光束的光路中有一聚焦透镜,焦点在样品室内;在样品室的一侧且与透射光束相垂直处安装激光器,另一侧安装位置敏感探测器;样品室与激光器之间和样品室与位置敏感探测器之间分别安装有聚焦透镜,在反射光路上设置光探测器;光探测器和位置敏感器的输出端分别与琐相放大器的输入端相连,锁相放大器的输出端与计算机的输入端相连。As shown in Figure 1, the light source adopts a combination light source, deuterium lamp, tungsten halogen lamp and its controllable power supply; the monochromator adopts a grating monochromator, and its output monochromatic wavelength is 200nm-2500nm; the optical detector adopts a vacuum thermopile, Si or P b S light detector, the light position sensor adopts double photodiode type light position sensor, the lock-in amplifier adopts EG & G 5208, and the laser uses He-Ne laser; the light source is connected with the monochromator, and the monochromator A chopper is installed at the output slit of the chopper, a half-transparent mirror M is arranged in the optical path of the output end of the chopper, a focusing lens is arranged in the optical path of the transmitted light beam, and the focal point is in the sample chamber; A laser is installed where the transmitted light beam is perpendicular, and a position-sensitive detector is installed on the other side; focusing lenses are respectively installed between the sample chamber and the laser and between the sample chamber and the position-sensitive detector, and optical detectors are installed on the reflected light path; light detection The output terminals of the sensor and the position sensor are respectively connected with the input terminals of the lock-in amplifier, and the output terminals of the lock-in amplifier are connected with the input terminals of the computer.

本实用新型最好的方案是半透半反镜M与斩波器输出端光路中的光束成45°角。The best solution of the utility model is that the half-transparent mirror M forms an angle of 45° with the light beam in the chopper output end optical path.

1.测量光透过率:如图2所示,使用该装置中的光源、单色仪、斩波器、半透半反射镜M、光探测器、锁相放大器、计算机组合,可以测量材料样品的光透过率。1. Measuring light transmittance: As shown in Figure 2, using the light source, monochromator, chopper, half mirror M, light detector, lock-in amplifier, and computer combination in the device, the material can be measured The light transmittance of the sample.

测量时,在没有置入被测样品情况下,首先,扫描测量各波长的光强、单色仪的输出光经斩波器斩波,被半透半反射镜M反射,光将沿箭头方向进入光探测器,输出信号由锁相放大器放大后,将数据存入计算机;然后,在探测器入射窗前处置入被测样品,进行同样的测量,两次测量结果在计算机内进行归一化,即可得出样品的透过率随波长的变化关系。When measuring, without placing the sample under test, first, scan and measure the light intensity of each wavelength. The output light of the monochromator is chopped by the chopper and reflected by the half mirror M, and the light will follow the direction of the arrow. After entering the optical detector, the output signal is amplified by the lock-in amplifier, and the data is stored in the computer; then, the measured sample is placed in front of the detector incident window, and the same measurement is performed, and the two measurement results are normalized in the computer , the relationship between the transmittance of the sample and the wavelength can be obtained.

2.测量光反射率:如图3所示,使用该装置中的光源、单色器、斩波器、半透半反射镜M、光探测器、锁相放大器、计算机与样品室组合,可以测量材料样品的光反射率,但不同的是半透半反镜要旋转90°度,以保证测量时样品表面与入射光线保持垂直。2. Measure light reflectance: as shown in Figure 3, use the light source in this device, monochromator, chopper, half mirror M, light detector, lock-in amplifier, computer and sample room combination, can Measure the light reflectance of material samples, but the difference is that the half mirror should be rotated 90° to ensure that the sample surface is perpendicular to the incident light during measurement.

测量时,将标准反射镜置于穿过半透半反镜M的光束并与光束垂直的位置,进行波长扫描,计算机记录不同波长的光强信号;用被测样品替换标准反射镜,再次进行波长扫描,并记录样品光强数据;用标准反射镜的数据对样品数据归一化,即得到样品的光垂直反射率R。When measuring, place the standard reflector at a position perpendicular to the beam passing through the half-mirror M and perform wavelength scanning, and the computer records the light intensity signals of different wavelengths; replace the standard reflector with the sample to be measured, and perform wavelength scanning again. Scan and record the light intensity data of the sample; normalize the sample data with the data of the standard mirror to obtain the light vertical reflectance R of the sample.

反射率随波长变化的曲线如果存在两个(或以上)的干涉峰(谷),则可以由相应干涉峰(谷)的波长数据和样品的折射率利用光波干涉公式计算出薄膜材料的厚度d。If there are two (or more) interference peaks (valleys) in the curve of reflectivity versus wavelength, the thickness d of the film material can be calculated from the wavelength data of the corresponding interference peaks (valleys) and the refractive index of the sample using the light wave interference formula .

由光反射率R(λ)、光透过率T(λ)、厚度d可计算出吸收系数α(λ),并进一步得到光学带隙Eg。The absorption coefficient α(λ) can be calculated from the light reflectance R(λ), the light transmittance T(λ), and the thickness d, and the optical band gap Eg can be further obtained.

3.测量(恒定)光电导谱:如图4所示,使用该装置中的中光源、单色仪、斩波器、光探测器、半透半反镜、样品室、锁相放大器、计算机组合可以测量(恒定)光电导谱;该组合不同的是计算机输出端与光源相连接,可以控制光源的光输出,使测量过程中的光电流保持某一常数,即为恒定光电导谱。因此,对光电导谱测量有如下要求:3. Measure (constant) photoconductive spectrum: as shown in Figure 4, use medium light source, monochromator, chopper, light detector, half mirror, sample chamber, lock-in amplifier, computer in this device The combination can measure (constant) photoconductive spectrum; the difference of this combination is that the output terminal of the computer is connected to the light source, and the light output of the light source can be controlled to keep the photocurrent during the measurement process constant, which is the constant photoconductive spectrum. Therefore, there are the following requirements for photoconductive spectroscopy measurement:

(1)样品:对薄膜样品,要求在材料上制作出共面电极,两电极之间为光照区。电极引出可以采用银浆粘接电线,或弹簧片接触的办法。(2)电路连接:将电压源、锁相放大器电流输入端子、样品电极串联成回路。(3)样品放置:样品置于样品室,使单色光可充分照射样品两个测量电极之间的区域,并保证样品不会受到外界的光干扰。(1) Sample: For thin film samples, it is required to make coplanar electrodes on the material, and the light area is between the two electrodes. The electrodes can be drawn out by bonding wires with silver paste, or contacting with spring sheets. (2) Circuit connection: connect the voltage source, the current input terminal of the lock-in amplifier, and the sample electrode in series to form a loop. (3) Sample placement: The sample is placed in the sample chamber, so that the monochromatic light can fully illuminate the area between the two measuring electrodes of the sample, and ensure that the sample will not be disturbed by external light.

测量:用透过半透半反镜M的光来激发样品的光电流,锁相放大器1将光电流放大后输入计算机;光探测器接收到半透半反镜M的反射光强信号经锁相放大器2放大后输入计算机,当单色仪对各波长一次扫描后,计算机便记录下各波长下的光强数值和光电流数值。Measurement: use the light passing through the half-mirror M to excite the photocurrent of the sample, the lock-in amplifier 1 amplifies the photocurrent and then input it to the computer; Amplifier 2 is amplified and input to the computer. After the monochromator scans each wavelength once, the computer records the light intensity value and photocurrent value at each wavelength.

计算:计算机将光电流值换算成光电导数值,然后光强数值进行归一化,得到光电导光谱响应曲线σ(λ),即光电导谱。Calculation: The computer converts the photocurrent value into a photoconductive value, and then normalizes the light intensity value to obtain the photoconductive spectral response curve σ(λ), that is, the photoconductive spectrum.

4.测量量子效率:用如图4的装置还可以测量光电池的量子效率,所不同的是它不用外加电源。将被测光电池放置在样品室,用透过半透半反镜M的光来激发光电池的光电流,锁相放大器1将光电流放大后输入计算机;光探测器接收到半透半反镜M的反射光强信号经锁相放大器2放大后输入计算机,当单色仪对各波长一次扫描后,计算机便记录下各波长下的光强数值和光电池光电流数值。4. Measuring the quantum efficiency: the quantum efficiency of the photovoltaic cell can also be measured with the device shown in Figure 4, the difference is that it does not need an external power supply. Place the photocell to be tested in the sample chamber, use the light passing through the half-mirror M to excite the photocurrent of the photocell, the lock-in amplifier 1 amplifies the photocurrent and input it to the computer; the photodetector receives the light from the half-mirror M The reflected light intensity signal is amplified by the lock-in amplifier 2 and then input to the computer. After the monochromator scans each wavelength once, the computer records the light intensity value and the photocurrent value of the photocell at each wavelength.

计算机将光强数值换算成相应各波长(单位时间)入射的光子数,将光电流换算成单位时间产生的光生载流子数;二者比较即可得到量子效率,它是一个小于1的数。The computer converts the light intensity value into the number of incident photons corresponding to each wavelength (unit time), and converts the photocurrent into the number of photogenerated carriers generated per unit time; the quantum efficiency can be obtained by comparing the two, which is a number less than 1 .

5.测量光热偏转谱:图1的全部组合,是测量光热偏转谱结构示意方框图。半透半反镜M将单色光分为两部分,反射到光电探测器的部分用于测量光的能量,透射部分用于激发被测材料的光热效应,激光器和位置敏感器件用来测量光热偏转。5. Measuring the photothermal deflection spectrum: the whole combination of Fig. 1 is a schematic block diagram of the structure of the measurement photothermal deflection spectrum. The half mirror M divides the monochromatic light into two parts, the part reflected to the photodetector is used to measure the energy of the light, the transmitted part is used to excite the photothermal effect of the measured material, and the laser and position sensitive device are used to measure the light energy. thermal deflection.

(1)样品竖直立放于样品室内透明的石英盒内,单色光垂直聚焦照射到样品表面,激光测量光束掠过样品表面,与单色光在样品表面形成共焦,石英盒内充满测量工质(通常为四氯化碳)。(1) The sample is placed vertically in a transparent quartz box in the sample chamber. The monochromatic light is vertically focused and irradiated on the sample surface. Measuring working fluid (usually carbon tetrachloride).

(2)开启激光器,在样品不被单色光照射的情况下,调整位置敏感器(PSD)的位置(通常PSD是两个间隙很小的光电二极管),当探测激光束对两个光电二极管照射相等时,位置敏感器PDS输出为零。(2) Turn on the laser, and adjust the position of the position sensor (PSD) when the sample is not irradiated by monochromatic light (usually the PSD is two photodiodes with a small gap), when the detection laser beam hits the two photodiodes When the irradiation is equal, the position sensor PDS output is zero.

(3)用透过半透半反镜M的光照射到样品表面,样品吸收光产生的热量,使样品表面液体中产生一个以照射焦点为中心的温度梯度场,局部液体温度的升高使其光折射率改变,形成一个“液体透镜”,当测量激光光束通过该“透镜”时,光线就会发生偏转。偏转距离随光束前进而增大(几何比例),位置敏感器PSD检测到偏转量,由锁相放大器1放大,并输入到计算机;光探测器接收被半透半反镜反射的光强信号,由锁相放大器2放大,并将数据输入计算机。(3) Irradiate the surface of the sample with the light that passes through the half-mirror M, and the heat generated by the sample absorbs the light, so that a temperature gradient field centered on the irradiation focus is generated in the liquid on the surface of the sample, and the increase of the local liquid temperature makes it The light's refractive index changes, forming a "liquid lens" through which the measuring laser beam is deflected. The deflection distance increases as the light beam advances (geometric ratio), and the position sensor PSD detects the deflection amount, which is amplified by the lock-in amplifier 1 and input to the computer; the light detector receives the light intensity signal reflected by the half-transparent mirror, Amplified by the lock-in amplifier 2, and input the data into the computer.

测量光束的偏转量实际上反映了样品的光吸收,在对光强归一化后,就得到了不同波长下样品光吸收的特性。由于其灵敏度很高,因此,可以用来检测极小的光吸收系数α。The deflection of the measuring beam actually reflects the light absorption of the sample. After normalizing the light intensity, the characteristics of the light absorption of the sample at different wavelengths are obtained. Due to its high sensitivity, it can be used to detect extremely small light absorption coefficient α.

Claims (2)

1. multifunctional light electrical parameter measuring device, its feature comprise that mainly light source, monochromator, chopper, photo-detector, position sensor, lock-in amplifier, computing machine, laser instrument and sample chamber constitute; Light source links to each other with monochromator, at the output slit place of monochromator chopper is installed, and a semi-transparent semi-reflecting lens M is set in the light path of chopper output terminal, and a condenser lens is arranged in the light path of transmitted light beam, and focus is in the sample chamber; In a side of sample chamber and with the perpendicular place of transmitted light beam laser instrument, opposite side installation site sensing detector are installed; Be separately installed with condenser lens between sample chamber and the laser instrument and between sample chamber and the Position-Sensitive Detector, photo-detector is set on reflected light path; The output terminal of photo-detector and position sensor links to each other with the input end of lock-in amplifier respectively, and the output terminal of lock-in amplifier links to each other with input end and computer.
2. according to the multifunctional light electrical parameter measuring device described in the claim 1, it is characterized in that semi-transparent semi-reflecting lens and incident light angle at 45.
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Cited By (8)

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Publication number Priority date Publication date Assignee Title
CN101871992A (en) * 2010-06-28 2010-10-27 常州亿晶光电科技有限公司 Alternating current measuring device for quantum efficiency of solar battery and using method thereof
CN101881807A (en) * 2010-06-28 2010-11-10 常州亿晶光电科技有限公司 Alternating-current measuring device for quantum efficiency of solar cell
CN101893680A (en) * 2010-06-28 2010-11-24 常州亿晶光电科技有限公司 Direct current measurement device for quantum efficiency of solar cell
CN101893679A (en) * 2010-06-28 2010-11-24 常州亿晶光电科技有限公司 Direct-current measuring device for quantum efficiency of solar cell and using method thereof
CN101398453B (en) * 2007-09-26 2010-12-22 中国科学院半导体研究所 Single light path quantum efficiency test system
CN102097539A (en) * 2011-01-20 2011-06-15 南昌航空大学 Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction
CN104458598A (en) * 2014-12-12 2015-03-25 张晓勇 Novel photoelectric property integrated test system
CN104979230A (en) * 2015-07-13 2015-10-14 中国建材国际工程集团有限公司 Device for measuring defect density of amorphous silicon thin film band gap

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101398453B (en) * 2007-09-26 2010-12-22 中国科学院半导体研究所 Single light path quantum efficiency test system
CN101871992A (en) * 2010-06-28 2010-10-27 常州亿晶光电科技有限公司 Alternating current measuring device for quantum efficiency of solar battery and using method thereof
CN101881807A (en) * 2010-06-28 2010-11-10 常州亿晶光电科技有限公司 Alternating-current measuring device for quantum efficiency of solar cell
CN101893680A (en) * 2010-06-28 2010-11-24 常州亿晶光电科技有限公司 Direct current measurement device for quantum efficiency of solar cell
CN101893679A (en) * 2010-06-28 2010-11-24 常州亿晶光电科技有限公司 Direct-current measuring device for quantum efficiency of solar cell and using method thereof
CN102097539A (en) * 2011-01-20 2011-06-15 南昌航空大学 Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction
CN102097539B (en) * 2011-01-20 2012-09-19 南昌航空大学 Device and method for continuously modulating semiconductor heterojunction photogenerated voltage
CN104458598A (en) * 2014-12-12 2015-03-25 张晓勇 Novel photoelectric property integrated test system
CN104979230A (en) * 2015-07-13 2015-10-14 中国建材国际工程集团有限公司 Device for measuring defect density of amorphous silicon thin film band gap

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