CN102097539A - Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction - Google Patents
Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction Download PDFInfo
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- CN102097539A CN102097539A CN2011100218652A CN201110021865A CN102097539A CN 102097539 A CN102097539 A CN 102097539A CN 2011100218652 A CN2011100218652 A CN 2011100218652A CN 201110021865 A CN201110021865 A CN 201110021865A CN 102097539 A CN102097539 A CN 102097539A
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Abstract
The invention relates to a device for continuously modulating a photoinduced voltage of a semiconductor hetetrojunction. A helium-neon gas laser, a chopper and a four-end sample holder are sequentially arranged on the same optical path at a preset distance, a programmable constant current source is connected with the two ends of the four-end sample holder in parallel, the other two ends of the four-end sample holder are connected with a direct current digital voltmeter and a phase-locked amplifier in parallel, and the programmable constant current source and the phase-locked amplifier are connected with a computer. The invention has the technical effect that the photoinduced voltage of the semiconductor hetetrojunction can be continuously modulated. The device and method in the invention are simple and convenient to implement, and the cost is low.
Description
Technical field
The present invention relates to a kind of device and method of photovoltage, relate in particular to a kind of device and method of continuous modulation heterojunction semiconductor photovoltage.
Background technology
The heterojunction semiconductor photovoltage is important embodiment in the photovoltaic effect; At present, because energy crisis, the heterojunction semiconductor photovoltaic generation has obtained extensive studies, but causes photoelectric conversion efficiency not high because photovoltage is low, and application prospect is still limited; So still in constantly studying, it is a field of photovoltaic power generation important techniques research direction to the method for raising heterojunction semiconductor photovoltage.
At present, people pay close attention to how to utilize semiconductor hetero-junction material kind variation (Sol. Energy Mater. Sol. Cells mostly, 92, PP909-913,2008), the variation of heterojunction doping content (J. Appl. Phys., 101,054504,2007), and the change of heterojunction structure (high cloud etc., a kind of Si/FeSi
2The solar cell of/Si sandwich structure consisting and manufacture method thereof, application for a patent for invention number: 200910273050), modulate the energy gap of heterojunction, so that improve the heterojunction internal electric field, improve photovoltage, finally improve the photoelectric conversion efficiency of heterojunction.But up to the present, result of study finds that above method can't realize modulating continuously internal electric field, realizes the continuous variation of photovoltage.For this reason, internal electric field in the magnetic semiconductor heterojunction is modulated continuously by the research external magnetic field by the group that has (Appl.Phys.Lett, 87,242501,2005), realizes that photovoltage is tunable.But this method but has difficulties for the modulation of non magnetic semiconductor internal electric field.So research external modulation means realize the continuous modulation of heterojunction internal electric field, realize that it is a kind of technology well that the heterojunction semiconductor photovoltage can be modulated continuously.
Summary of the invention
The object of the present invention is to provide a kind of device and method of continuous modulation heterojunction semiconductor photovoltage, can realize of the continuous variation of heterojunction semiconductor photovoltage, found the maximum of photovoltage with the external modulation means.
The present invention is achieved like this, modulate the device of heterojunction semiconductor photovoltage continuously, it comprises helium neon laser, chopper, continuous current able to programme source, dc digital voltmeter, lock-in amplifier, four end specimen holder and computers, it is characterized in that helium neon laser, chopper and four end specimen holders successively at a distance of preset distance on same light path, continuous current able to programme source is in parallel with the two ends of four end specimen holders, the other two ends of four end specimen holders and dc digital voltmeter and lock-in amplifier are connected in parallel, and continuous current able to programme source is connected computer with lock-in amplifier.
Method is: utilize computer control continuous current able to programme source to apply different directions and big or small direct current to heterojunction, modulation heterojunction internal electric field; Behind the laser radiation heterojunction that helium neon laser sends, utilize chopper and lock-in amplifier in conjunction with measuring heterojunction photovoltage under the different DC; Utilize dc digital voltmeter to measure heterojunction direct voltage under the different DC.
Technique effect of the present invention is: the photovoltage that can modulate heterojunction semiconductor continuously.The invention process is easy, and cost is low.
Description of drawings
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the Fe/Al that utilizes this system to test
2O
3The heterogeneous current/voltage figure that has under illumination and the no rayed of/GaAs.
Fig. 3 is the Fe/Al that utilizes system to test
2O
3/ GaAs heterojunction photovoltage is with the direct current variation diagram.
Helium neon laser 2, chopper 3, continuous current able to programme source 4, dc digital voltmeter 5, lock-in amplifier 6, four end specimen holders 7, computer in the drawings, 1.
Embodiment
As shown in Figure 1, the present invention is achieved like this, modulate the device of heterojunction semiconductor photovoltage continuously, helium neon laser 1, chopper 2 and four end specimen holders 6 successively at a distance of preset distance on same light path, continuous current able to programme source 3 is in parallel with the two ends of four end specimen holders 6, the other two ends of four end specimen holders 6 and dc digital voltmeter 4 and lock-in amplifier 5 are connected in parallel, and continuous current able to programme source 3 is connected computer 7 with lock-in amplifier 5.
Utilize computer 7 controls continuous current able to programme source 3 to give heterojunction two ends on the four end specimen holders 6, apply from negative 1 milliampere, to positive 1 milliampere of end, step-length is 1 microampere a direct current, modulation heterojunction internal electric field; Behind the heterojunction, utilize chopper 2 and lock-in amplifier 5 on the laser radiation four end specimen holders 6 that helium neon laser 1 sends in conjunction with the other two ends of heterojunction photovoltage on the four end specimen holders 6 under the measurement different DC; Utilize dc digital voltmeter 4 to measure under the different DC the other two ends of heterojunction direct voltage on the four end specimen holders 6.
Embodiment
We have utilized this systematic survey Fe/Al
2O
3The electrical properties of/GaAs heterojunction.Test result such as Fig. 2,3.Fig. 2 is Fe/Al
2O
3The heterogeneous current/voltage figure that has under illumination and the no rayed of/GaAs; We can see from figure, and photovoltage produces under the illumination; At direct voltage is zero place, and direct current is a negative value.Fig. 3 is the Fe/Al that utilizes system to test
2O
3/ GaAs heterojunction photovoltage is with the direct current variation diagram; We can see from figure, and photovoltage changes with direct current; Pay particular attention to, very wide peak value appears at approximately-0.00042A about, as arrow indication among the figure.
Above example illustrates that the system of the modulation heterojunction semiconductor photovoltage that we design has the characteristics of a highly significant, utilize this system exactly, we not only can measure the direct current and the d. c. voltage signal of heterojunction semiconductor sample simultaneously, monitor photovoltaic effect; And can be by the size of control direct current, the size of modulating photovoltage continuously finds maximum photovoltage.This system will obtain certain popularization in the middle of the research of controlling the heterojunction semiconductor internal electric field at present.
The above; only be the embodiment among the present invention, but protection scope of the present invention is not limited thereto, anyly is familiar with the people of this technology in the disclosed technical scope of the present invention; the conversion that can expect easily or replacement all should be encompassed in of the present invention comprising within the scope.
Claims (2)
1. continuous device of modulation heterojunction semiconductor photovoltage, it comprises helium neon laser, chopper, continuous current able to programme source, dc digital voltmeter, lock-in amplifier, four end specimen holder and computers, it is characterized in that helium neon laser, chopper and four end specimen holders successively at a distance of preset distance on same light path, continuous current able to programme source is in parallel with the two ends of four end specimen holders, the other two ends of four end specimen holders and dc digital voltmeter and lock-in amplifier are connected in parallel, and continuous current able to programme source is connected computer with lock-in amplifier.
2. the method for the described continuous modulation heterojunction semiconductor photovoltage of claim 1 is characterized in that method is: utilize computer control continuous current able to programme source to apply different directions and big or small direct current to heterojunction, modulation heterojunction internal electric field; Behind the laser radiation heterojunction that helium neon laser sends, utilize chopper and lock-in amplifier in conjunction with measuring heterojunction photovoltage under the different DC; Utilize dc digital voltmeter to measure heterojunction direct voltage under the different DC.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110021865A CN102097539B (en) | 2011-01-20 | 2011-01-20 | Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction |
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| CN201110021865A CN102097539B (en) | 2011-01-20 | 2011-01-20 | Device and method for continuously modulating photoinduced voltage of semiconductor hetetrojunction |
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| CN102097539A true CN102097539A (en) | 2011-06-15 |
| CN102097539B CN102097539B (en) | 2012-09-19 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104819938A (en) * | 2015-05-20 | 2015-08-05 | 吉林大学 | Surface photovoltage measuring method with combination of modulated light and non-modulated light |
| CN105044584A (en) * | 2015-07-03 | 2015-11-11 | 中国科学院物理研究所 | System used for detecting charge and electric field response of semiconductor device |
| CN105527483A (en) * | 2016-01-06 | 2016-04-27 | 中国科学院物理研究所 | Transient photovoltage test system capable of realizing electro-optic independent modulation |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002094175A (en) * | 2000-07-12 | 2002-03-29 | Sharp Corp | Semiconductor laser driving circuit |
| US20030201827A1 (en) * | 2002-04-26 | 2003-10-30 | Masami Ohnishi | High frequency power amplifier module |
| CN2589968Y (en) * | 2002-12-26 | 2003-12-03 | 南开大学 | Multifunctional photoelectric parameter measuring device |
| US20090237157A1 (en) * | 2008-03-05 | 2009-09-24 | Matsushita Electric Industrial Co., Ltd. | Power amplifier edge evaluation-alternative envelope modulator |
-
2011
- 2011-01-20 CN CN201110021865A patent/CN102097539B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002094175A (en) * | 2000-07-12 | 2002-03-29 | Sharp Corp | Semiconductor laser driving circuit |
| US20030201827A1 (en) * | 2002-04-26 | 2003-10-30 | Masami Ohnishi | High frequency power amplifier module |
| CN2589968Y (en) * | 2002-12-26 | 2003-12-03 | 南开大学 | Multifunctional photoelectric parameter measuring device |
| US20090237157A1 (en) * | 2008-03-05 | 2009-09-24 | Matsushita Electric Industrial Co., Ltd. | Power amplifier edge evaluation-alternative envelope modulator |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104819938A (en) * | 2015-05-20 | 2015-08-05 | 吉林大学 | Surface photovoltage measuring method with combination of modulated light and non-modulated light |
| CN105044584A (en) * | 2015-07-03 | 2015-11-11 | 中国科学院物理研究所 | System used for detecting charge and electric field response of semiconductor device |
| CN105527483A (en) * | 2016-01-06 | 2016-04-27 | 中国科学院物理研究所 | Transient photovoltage test system capable of realizing electro-optic independent modulation |
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| CN102097539B (en) | 2012-09-19 |
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