CN108051630A - A kind of method that photoelectric semiconductor material transient state photocurrent is measured under electric field or induced by magnetic field - Google Patents
A kind of method that photoelectric semiconductor material transient state photocurrent is measured under electric field or induced by magnetic field Download PDFInfo
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- CN108051630A CN108051630A CN201711296968.3A CN201711296968A CN108051630A CN 108051630 A CN108051630 A CN 108051630A CN 201711296968 A CN201711296968 A CN 201711296968A CN 108051630 A CN108051630 A CN 108051630A
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- transient state
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
Abstract
A kind of method that photoelectric semiconductor material transient state photocurrent is measured under electric field or induced by magnetic field, belongs to photoelectric semiconductor material photogenerated charge field of measuring technique.It is completed based on transient state photocurrent measuring system, and the test system is by digital oscilloscope, Nd：YAG laser, preamplifier and sample cell are formed, and are connected between each component units by BNC data cables；Sample cell from top to bottom, is made of top electrode, mica sheet, electro-optic material layer and lower electrode, lower electrode ground connection.Voltage (electric field) is provided for sample cell by lock-in amplifier, magnetic field is provided for sample cell by the neodymium iron boron strong magnet of two panels opposed polarity.Voltage is applied on upper and lower electrode, forms electric field between upper and lower electrode, at photoelectric material sample in the electric field, by applying the voltage of varying strength, the measurement not transient state photocurrent under same electric field.Two panels magnet N, S are extremely staggered relatively at left and right sides of sample cell, and magnetic direction, by applying the magnetic field of varying strength, realizes the transient state photocurrent measurement of induced by magnetic field parallel to electrode plane.
Description
Technical field
The invention belongs to photoelectric semiconductor material photogenerated charge field of measuring technique, and in particular to a kind of electric field or magnetic field lure
The method for leading lower measurement photoelectric semiconductor material transient state photocurrent.
Background technology
It is increasingly severe with the increasingly exhausted and environmental pollution of fossil energy, solar energy as cleanliness without any pollution, take it
The energy nexhaustible not to the utmost comes into the visual field of scientific research personnel, trans-utilization of the photoelectric semiconductor material in solar energy, photocatalysis
There is wide prospect in terms of degradation of contaminant.The photogenerated charge behavioral study of photoelectric semiconductor material is semiconductor trans-utilization
One of basic research of solar energy is significant.Surface Photovoltage technique and transient state photocurrent technology are characterization semiconductor optoelectronics
Material photogenerated charge generates, the technology of separated maturation.Surface Photovoltage technique characterization be photoelectric material at different wavelengths
Photoelectric respone in certain time of integration, transient state photocurrent characterized by techniques photoelectric material photogenerated charge generates, separation, compound dynamic
Mechanical process.Existing Surface Photovoltage technique and transient state photocurrent characterized by techniques are all photogenerated charges in semiconductor optoelectronic material
Expect the migratory behaviour under built-in field effect.
The work in fields such as electric field, magnetic fields is substantially when doing photocatalysis with photoelectric semiconductor material, photoelectrocatalysis being tested
With the lower experiment carried out, therefore we improve transient state photocurrent measuring technology, the test half under electric field or induced by magnetic field effect
The transient state photocurrent of conductor photoelectric material.
The content of the invention
It is an object of the invention to provide photoelectric semiconductor material (Fe is measured under a kind of electric field or induced by magnetic field2O3、TiO2、
ZnO、BiVO4、C3N4、WO3Deng) method of transient state photocurrent.The present invention is realized based on transient state photocurrent technology, in transient state
On the basis of photovoltage technique, electric field or magnetic field are introduced, the transient state photocurrent measurement under the induction of field is realized, and detects photoproduction electricity
Migratory behaviour of the lotus under electric field or induced by magnetic field.
The measurement of photoelectric semiconductor material transient state photocurrent of the present invention is complete based on transient state photocurrent measuring system
Into, the test system is by digital oscilloscope, Nd：YAG laser, preamplifier and sample cell are formed, between each component units
It is connected by BNC data cables.
Sample cell from top to bottom, is made of, top electrode is FTO (fluorine top electrode, mica sheet, electro-optic material layer and lower electrode
The stannic oxide of doping) electro-conductive glass, the thickness of mica sheet is 10~30 μm, photoelectric material 0.2~0.5mm of layer thickness, mica
Piece separates top electrode and photoelectric material sample as transparent, insulating materials, forms capacitance structure, light transmission but also can prevent from powering on
Charge circulation between pole and sample, lower electrode is FTO electro-conductive glass, and is grounded.
Digital oscilloscope records test data, and bandwidth is 20~500MHz, and sample rate is 0.5~5G/s, by Nd：YAG swashs
Trigger signal of the reference signal of light device output as digital oscilloscope.Digital oscilloscope has the function of " DC/AC detection ",
Here selection " exchange detection " function, signal base line caused by shielding the voltage (electric field) of lock-in amplifier offer with this raise.
Nd：YAG laser as test system source, it is possible to provide laser wave with 1064nm, 532nm, 355nm,
266nm, laser intensity 10~500 μ J, 1~20Hz of laser frequency, 5~7ns of laser pulse period.Laser light incident direction perpendicular to
The upper electrode surface of sample cell.
Preamplifier gathers the transient state photocurrent signal of the photoelectric material in sample cell as signal pickup assembly,
And digital oscilloscope is input to after signal is amplified.
Magnetic field is provided by the N35 neodymium iron borons strong magnet of two panels opposed polarity, and two panels magnet N, S are extremely staggered relatively upper and lower
Electrode surrounds the left and right sides in region, magnetic direction parallel to upper and lower electrode surface, i.e., perpendicular to laser light incident direction, magnetic
50~100mT of induction.
Electric field is provided by lock-in amplifier, and lock-in amplifier has the function of to export stable, continuous, adjustable voltage.Use BNC
Data cable connects the upper and lower electrode of lock-in amplifier and sample cell, and voltage is applied on upper and lower electrode, shape between upper and lower electrode
Into electric field, power on that electrode potential is higher than lower electrode potential to be defined as positive voltage at photoelectric material sample in the electric field, otherwise be negative electricity
Pressure；Voltage range -1~1V that lock-in amplifier applies.
The transient state photocurrent test method of electric field or induced by magnetic field is：Nd：The reference signal of YAG laser output is by number
Oscillograph triggers；Nd：The laser of YAG laser output is radiated on photoelectric material, and excitation photoelectric material generates photogenerated charge；Before
The transient state photocurrent signal of amplifier acquisition photoelectric material photogenerated charge is put, digital oscilloscope is input to after signal is amplified；Number
Transient state photocurrent signal of the word oscillograph recording from preamplifier, measures the photoelectric material for not applying electric field or magnetic field first
Transient state photocurrent signal, then measure the transient state photocurrent signal of the photoelectric material after applying electric field or magnetic field.
Description of the drawings
Fig. 1, sample cell apply electric field (a) and magnetic field (b) schematic diagram；
The transient state photocurrent spectrogram of the ZnO powder under electric field induction described in Fig. 2, embodiment 1；
The TiO under electric field induction described in Fig. 3, embodiment 22The transient state photocurrent spectrogram of powder；
The transient state photocurrent spectrogram of the ZnO powder under induced by magnetic field described in Fig. 4, embodiment 3；
The TiO under induced by magnetic field described in Fig. 5, embodiment 42The transient state photocurrent spectrogram of powder；
Specific embodiment
Below in conjunction with embodiment and attached drawing, the present invention is described in further detail, but not limited to this.
Embodiment 1
Transient state photocurrent of the commodity ZnO powder under electric field induction is measured, using Nd：YAG (radium is precious, Dawa-200) laser
Device provides electric field, preamplifier as system source, lock-in amplifier (Stanford, SR830) for sample cell
The signal of (Brookdeal lectronics, 5003) acquisition sample cell electro-optic material layer transient state photocurrent, digital oscilloscope
The data of (Tektronix, TDS 5054) record preamplifier acquisition, 20 μm of mica sheet thickness, ZnO powder thickness 0.3mm.Swash
Optical wavelength 355nm, 100 μ J of laser intensity.First measurement apply 0V voltages transient state photocurrent, then respectively measurement -0.1V and
Transient state photocurrent under 0.1V.Measurement result shows the signal of ZnO under different voltages 2.8 × 10-7Signal peak strength at s is not
Become, this is the signal peak that the quick separating of the photogenerated charge as caused by ZnO built-in fields generates, and illustrates photogenerated charge in self-built electricity
It is influenced when being separated under field action from external electric field；Signal peak at the 0.004s intensity enhancing under negative voltage effect, in positive electricity
Pressure acts on lower remitted its fury or even negative signal response occurs, this is that diffusion of the photogenerated charge under concentration gradient effect is drawn
The signal peak risen, negative voltage induces photohole, and to surface migration, positive signal enhances, and positive voltage induces light induced electron to table
Face migrates, and reduces positive signal, generates negative signal peak.
Embodiment 2
Measure commodity TiO2Transient state photocurrent of the powder under electric field induction, using Nd：YAG (radium is precious, Dawa-200) swashs
Light device provides electric field, preamplifier as system source, lock-in amplifier (Stanford, SR830) for sample cell
The signal of (Brookdeal lectronics, 5003) acquisition sample cell electro-optic material layer transient state photocurrent, digital oscilloscope
The data of (Tektronix, TDS 5054) record preamplifier acquisition, 20 μm of mica sheet thickness, TiO2Powder thickness 0.3mm.
Excitation laser wavelength 355nm, 100 μ J of laser intensity.Measurement applies the transient state photocurrent of 0V voltages first, then measure respectively-
Transient state photocurrent under 0.1V and 0.1V.Measurement result shows TiO under different voltages23 × 10-7Signal peak strength at s is not
Become, illustrate that separating behavior of the photogenerated charge under built-in field effect influences from external electric field；1.5 × 10-5Signal peak at s
The intensity enhancing under negative voltage effect, the remitted its fury under positive voltage effect, this is signal peak caused by the diffusion of photogenerated charge,
Negative voltage induces photohole, and to surface migration, positive signal enhancing, positive voltage induces light induced electron to surface migration, positive to believe
Number weaken.
Embodiment 3
Transient state photocurrents of the commodity ZnO under induced by magnetic field is measured, using Nd：YAG (radium is precious, Dawa-200) laser is done
For system source, lock-in amplifier (Stanford, SR830) provides electric field, preamplifier (Brookdeal for sample cell
Lectronics, 5003) signal of acquisition sample cell electro-optic material layer transient state photocurrent, digital oscilloscope (Tektronix, TDS
5054) data of preamplifier acquisition, 20 μm of mica sheet thickness, ZnO powder thickness 0.3mm are recorded.Excitation laser wavelength
355nm, 100 μ J of laser intensity.The transient state photocurrent for not applying magnetic field is measured first, then measures the transient state photoelectricity after applying magnetic field
Pressure, magnetic induction intensity 80mT.Measurement result is shown, applies transient state photocurrent intensity enhancing behind magnetic field, the magnetic field of application promotes
The separation of photogenerated charge.
Embodiment 4
Measure commodity TiO2Transient state photocurrent under induced by magnetic field, using Nd：YAG (radium is precious, Dawa-200) laser
As system source, lock-in amplifier (Stanford, SR830) provides electric field, preamplifier (Brookdeal for sample cell
Lectronics, 5003) signal of acquisition sample cell electro-optic material layer transient state photocurrent, digital oscilloscope (Tektronix, TDS
5054) data of preamplifier acquisition, 20 μm of mica sheet thickness, TiO are recorded2Powder thickness 0.3mm.Excitation laser wavelength
355nm, 100 μ J of laser intensity.The transient state photocurrent for not applying magnetic field is measured first, then is measured and applied magnetic induction intensity 80mT magnetic
The transient state photocurrent of field.Measurement result is shown, applies transient state photocurrent intensity enhancing behind magnetic field, the magnetic field of application promotes photoproduction
The separation of charge.
Claims (3)
1. the method for photoelectric semiconductor material transient state photocurrent is measured under a kind of electric field or induced by magnetic field, it is characterised in that：The party
Method is completed based on transient state photocurrent measuring system, and test system is by digital oscilloscope, Nd：YAG laser, preamplifier
It forms with sample cell, is connected between each component units by BNC data cables；Sample cell from top to bottom, by top electrode, mica sheet, light
Material layer and lower electrode composition, lower electrode ground connection, laser light incident direction is perpendicular to the upper electrode surface of sample cell；Nd：YAG swashs
The reference signal of light device output triggers digital oscilloscope, Nd：The laser of YAG laser output is radiated on photoelectric material, is swashed
The electric material that shines generates photogenerated charge；Preamplifier gathers the transient state photocurrent signal of photoelectric material photogenerated charge, by signal
Digital oscilloscope is input to after amplification；Digital oscilloscope records the transient state photocurrent signal from preamplifier；So as to complete
The measurement of the transient state photocurrent of photoelectric material under electric field or induced by magnetic field；Electric field is provided by lock-in amplifier for sample cell, locks phase
The voltage of amplifier output is applied on the upper and lower electrode of sample cell, and electric field is formed between upper and lower electrode；Magnetic field is by two panels not homopolarity
The neodymium iron boron strong magnet of property provides for sample cell, and two panels magnet N, S are extremely staggered relatively to surround region in the upper and lower electrode of sample cell
The left and right sides, magnetic direction parallel to upper and lower electrode plane, i.e., perpendicular to laser light incident direction.
2. the side of photoelectric semiconductor material transient state photocurrent is measured under a kind of electric field as described in claim 1 or induced by magnetic field
Method, it is characterised in that：Magnetic field is provided by the N35 neodymium iron borons strong magnet of two panels opposed polarity, 50~100mT of magnetic induction intensity.
3. the side of photoelectric semiconductor material transient state photocurrent is measured under a kind of electric field as described in claim 1 or induced by magnetic field
Method, it is characterised in that：The voltage range of lock-in amplifier output is -1~1V.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN111624158A (en) * | 2020-06-10 | 2020-09-04 | 苏州科技大学 | Online laser pulse ultrafast dynamics detection equipment and application method thereof |
| CN114002289A (en) * | 2022-01-04 | 2022-02-01 | 苏州大学 | Transient photovoltage test sample assembly, transient photovoltage measurement device and method |
| CN114002296A (en) * | 2022-01-04 | 2022-02-01 | 苏州大学 | Bioactive substance transient photovoltage measurement assembly, device and method |
| CN114002290A (en) * | 2022-01-04 | 2022-02-01 | 苏州大学 | Transient photovoltage measurement system and method in particle-scale sample in-situ reaction |
| CN114002484A (en) * | 2022-01-04 | 2022-02-01 | 苏州大学 | Transient photovoltage test sample assembly |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111624158A (en) * | 2020-06-10 | 2020-09-04 | 苏州科技大学 | Online laser pulse ultrafast dynamics detection equipment and application method thereof |
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| CN114002290A (en) * | 2022-01-04 | 2022-02-01 | 苏州大学 | Transient photovoltage measurement system and method in particle-scale sample in-situ reaction |
| CN114002484A (en) * | 2022-01-04 | 2022-02-01 | 苏州大学 | Transient photovoltage test sample assembly |
| CN114002290B (en) * | 2022-01-04 | 2022-03-22 | 苏州大学 | Transient photovoltage measurement system and method in particle-scale sample in-situ reaction |
| CN114002289B (en) * | 2022-01-04 | 2022-03-22 | 苏州大学 | Transient photovoltage test sample assembly, transient photovoltage measurement device and method |
| CN114002484B (en) * | 2022-01-04 | 2022-03-25 | 苏州大学 | Transient photovoltage test sample assembly |
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