CN103439641A - Surface photovoltage method based semiconductor material parameter testing device and testing method - Google Patents
Surface photovoltage method based semiconductor material parameter testing device and testing method Download PDFInfo
- Publication number
- CN103439641A CN103439641A CN2013104049417A CN201310404941A CN103439641A CN 103439641 A CN103439641 A CN 103439641A CN 2013104049417 A CN2013104049417 A CN 2013104049417A CN 201310404941 A CN201310404941 A CN 201310404941A CN 103439641 A CN103439641 A CN 103439641A
- Authority
- CN
- China
- Prior art keywords
- semiconductor material
- sample
- infrared laser
- pole piece
- resistivity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention discloses a surface photovoltage method based semiconductor material parameter testing device and testing method. The testing device comprises a casing, a cantilever, a measuring probe and a sample bench, wherein the measuring probe is internally provided with an infrared laser and a sensing electrode slice; a pulse light source driver is positioned inside the casing; a semiconductor material sample to be tested is arranged on the sampling bench; the measuring probe is right over the sample to be tested; the sensing electrode slice is connected with a charge amplifier through a coaxial cable wire; and the infrared laser is connected with the pulse light source driver through a two-core shield wire. The testing method is as follows: the pulse light emitted by the infrared laser is vertically irradiated on the sample, the sensing electrode slice receives the static charge generated by the weak photovoltage on the surface of the sample for transmitting to the input end of the charge amplifier, and a liquid crystal display screen displays the conductive type and resistivity/sheet resistance values of the sample to be tested after the static charge is processed by a signal processing circuit. The testing device provided by the invention has the advantages of small volume, light weight, small power consumption and low cost.
Description
Technical field
The present invention relates to semiconductor material electrical parameter tester research field, particularly a kind of semiconductor material parameter tester and method of testing based on surface photovoltaic method.
Background technology
The conduction type of semiconductor material and resistivity/sheet resistance are important basic electricity parameters.Be acceptor or donor element according to adulterated element, semiconductor material is divided into to P type and the large class of N-type two.Measure semiconductor conductivity types and can provide original foundation for manufacturing semiconductor devices.At present, measure the semiconductor material conduction type both at home and abroad and mainly contain two kinds of methods: (1) cold-hot probe method; (2) three probe method.The cold-hot probe method is the thermoelectric effect principle of application semiconductor material, mainly is applicable to the measurement of low-resistivity sample; And three probe method is application rectification principle, mainly be applicable to the measurement of high resistivity sample.Two kinds of methods have certain scope of application, and these two kinds of methods are all to utilize probe directly to contact the contact method of sample surfaces, and its shortcoming is: (1) probe contact semiconductor surface, and surface can be subject to certain destruction; (2), if pressure is inadequate, the lip-deep oxide of detecting probe surface and semiconductor samples also may cause measuring error.
In addition, primary polycrystalline silicon material is comprised of a large amount of crystal grain not of uniform size, that crystal orientation is different, there are a large amount of crystal boundaries and potential barrier in a little polycrystalline, charge carrier moves very difficult in polycrystalline, because the resistivity of crystal grain is not high, and the grain boundary resistance rate is higher upper tens times than it, even thousands of times.Because there is grain boundary effect in polycrystalline material, traditional DC current method of testing is because the impact that is subject to the crystal boundary potential barrier can't be used.In order to accurately measure the resistivity of primary polycrystalline silicon material, before the resistivity that detects polysilicon, must on polycrystalline, drill through lining bar, and lining bar must clean in the factory building very high at cleanliness factor with electron level nitric acid, etching acid, high purity water, reinstall in the molten check in district stove and melt and grow up to monocrystalline, then could measure resistivity by two sonde methods.From material, clean to the molten process in shove charge district, the trace impurity in any container chemical, gas, radio-frequency coil and furnace chamber all can interference measurement results.Therefore polysilicon factory has consumed a large amount of human and material resources, electric power for the base phosphorus resistivity of check polysilicon, and produced spent acid when measuring, waste gas causes environmental pollution.
Development along with semiconductor material processing technology level, semiconductor wafer is done more and more thinlyyer (silicon wafer thickness for used for solar batteries has reached 160～180 μ m), measure its important electrical parameter and can not continue to use again three traditional probes, four probe method and cold and hot measuring equipment as model, resistivity/sheet resistance, because these measuring methods all must be pressed not only hard but also sharp metal probe to touch on silicon chip, very easily cause the silicon chip damage, these traditional methods also can't adapt to the requirement of modern silicon chip automatic sorting simultaneously.
Therefore tester and the method for testing thereof of a kind of contactless, undamaged semiconductor material conduction type and resistivity/sheet resistance need to be provided.
Summary of the invention
Fundamental purpose of the present invention is to overcome the shortcoming of prior art with not enough, a kind of semiconductor material parameter tester based on surface photovoltaic method is provided, this tester is realized based on surface photovoltaic method, without contact semiconductor material to be detected, therefore can avoid sample surfaces to be damaged, can greatly reduce the impact of grain boundary effect again, thereby accurately measure the correlation parameter of semiconductor material simultaneously, resistivity/sheet resistance for example, and cost is lower.
The shortcoming that another object of the present invention is to overcome prior art, with not enough, provides a kind of method of testing based on above-mentioned semiconductor material parameter tester, and the method has accurate, the undamaged advantage of measurement.
Purpose of the present invention realizes by following technical scheme: the semiconductor material parameter tester based on surface photovoltaic method, comprise casing, cantilever, sample stage, measuring sonde, described cantilever, sample stage are arranged on casing, measuring sonde is arranged on cantilever, and the measuring sonde end of probe is above sample stage; Be provided with infrared laser, induced electricity pole piece in described measuring sonde, the pulsed light of infrared laser emission certain frequency is through the perforate on the induced electricity pole piece, and vertical irradiation is on the sample be positioned on sample stage; Be provided with charge amplifier, signal processing circuit in cantilever, charge amplifier is connected with the induced electricity pole piece, the induced electricity pole piece is for being captured in the static charge that pulsed light excites the photovoltage on lower sample surfaces to cause, charge amplifier sends to signal processing circuit after electric charge is amplified, and signal processing circuit externally outputs test result after signal is processed.
Concrete, described tester also comprises display screen and display driver circuit, and display driver circuit is connected with signal processing circuit, for driving the result after display screen display processing circuit processes.
Concrete, be provided with infrared laser, induced electricity pole piece, coaxial wire, screened film, aluminium alloy sleeve barrel, aluminum alloy casing, two core shielding lines in described measuring sonde, infrared laser is placed in aluminium alloy sleeve barrel, both are by a pad isolation, one circular hole is arranged at the aluminium alloy sleeve barrel top, for infrared laser institute transponder pulse light, penetrates; Two core shielding lines are welded on two pins of infrared laser, from aluminium gold trap cylinder afterbody, pass, and with the light-pulse generator driver that is arranged on box house, are connected; That side of screened film conduction sticks on the aluminium alloy sleeve barrel end face, and a side of insulation is provided with the induced electricity pole piece; Coaxial wire is welded on the output terminal of induced electricity pole piece, from the space between aluminium alloy sleeve barrel and aluminum alloy casing, passes, and with the input end of charge amplifier in being arranged on cantilever, is connected.Measuring sonde adopts aluminum alloy casing to have shield effectiveness preferably.
Preferably, described screened film is a water white film, and thickness is 0.1-0.2mm, and one side insulate, and another side conducts electricity, and the one side of its conduction is starched the end face that sticks on aluminium alloy sleeve barrel by conduction electrocoagulation.Thereby can under the prerequisite of shading light not, can shield the interference of pulsed light again.
Further, the wavelength of described infrared laser is 0.895-0.91 μ m.
Preferably, it is 20-30Hz that described light-pulse generator driver produces pulse signal frequency, and pulse width is adjustable in 200ns-240 μ s scope, and voltage is adjustable in the 10-17V scope, and output momentary pulse power is 50-60W.
Preferably, the structure of described induced electricity pole piece is divided into two parts, a part is handle shape structure, another part is the disc-shaped structure, in measuring sonde, in two-part middle part, bend, the disc-shaped structure is placed in that side of screened film insulation, middle porose, the pulsed light of infrared laser emission by this hole vertical irradiation on the sample be positioned on sample stage; The central copper wire bonding of coaxial wire is on handle shape structure.This structure can obtain better inductive effects.
Further, described induced electricity pole piece is the beryllium-bronze material, chrome-faced.Adopt beryllium-bronze can well meet the requirement of collection signal, meet the demand of measuring than low-resistance; Electroplating Cr onto surface can prevent the impact of surface oxidation on measuring.
A kind of semiconductor material parameter test method based on surface photovoltaic method, contrary this principle of the polarity of the photovoltage produced while according to P-type semiconductor and N-type semiconductor, being subject to the infrared pulse irradiation, judge the conduction type of semiconductor material according to the positive-negative polarity of the surface photovoltage of the testing sample measured; Corresponding relation according to size and resistivity or the sheet resistance of known semiconductor material surface photovoltage, obtain resistivity or sheet resistance according to the surface photovoltage of the testing sample measured; Conduction type and resistivity or conduction type and the sheet resistance value of last externally output testing sample.
Concrete steps are as follows:
(1) semiconductor samples to be measured is positioned on sample stage, the pulsed light of light-pulse generator driver drives infrared laser emission certain frequency, pulsed light is radiated on semiconductor samples;
(2) the semiconductor samples surface inspires photovoltage under pulsed light irradiates, and the collection of induced electricity pole piece, because of the static charge that photovoltage causes, is sent to charge amplifier through coaxial wire;
(3) charge amplifier becomes static charge voltage signal and amplifies, and signal processing circuit is carried out synchronous shaping, polarity judgement, numerical value conversion to the voltage signal after amplifying, and obtains conduction type and resistivity or conduction type and the sheet resistance value of testing sample;
(4) externally output test result.
More specifically, in described step (3), signal processing circuit is synchronizeed and is amplified with the pulse signal of light-pulse generator driver the voltage signal received, then carry out reading of the judgement of signal positive-negative polarity and crest voltage, finally crest voltage is converted into to resistivity or the sheet resistance value of testing sample according to existing semiconductor material surface photovoltage and resistivity or sheet resistance calibration curve.
Concrete, in described step (4), signal processing circuit is connected with display screen by a display driver circuit, and the positive-negative polarity judged result of signal, resistivity or sheet resistance result are presented on display screen.
The present invention compared with prior art, has following advantage and beneficial effect:
1, the present invention has contactless, the undamaged advantage of test, can avoid sample surfaces to be damaged, can greatly reduce the impact of grain boundary effect again simultaneously, thereby accurately measure model, the resistivity/sheet resistance of semiconductor material, can be used for the measurement of the semiconductor material electrical parameters such as monocrystalline silicon, casting polycrystalline silicon and primary polysilicon.
2, the induced electricity pole piece in the present invention is divided into two parts, thereby can obtain better inductive effects.
3, the pulsed light itself due to middle infrared laser emission of the present invention is exactly an interference source, the induced electricity pole piece is when receiving the photoelectric signal of sample surfaces, also can receive the undesired signal of pulsed light, generally only think that undesired signal only comes from beyond instrument, and main interference comes from pulsed light itself in fact.In the present invention, a side of screened film conduction is starched the end face that sticks on aluminium alloy sleeve barrel by conduction electrocoagulation, adopts this structure can make electromagnetism to external world of device and the interference of other signal reach better shield effectiveness, thereby obtains more stable and accurate measurement result.
The accompanying drawing explanation
The one-piece construction schematic diagram that Fig. 1 is apparatus of the present invention;
The structural representation that Fig. 2 is measuring sonde in the present invention;
The structural representation that Fig. 3 is induced electricity pole piece in the present invention;
Fig. 4 is whole metering circuit principle schematic in the present invention.
Wherein in Fig. 1-2: the 1-LCDs; The 2-sample stage; The 3-measuring sonde; The 4-cantilever; The 5-casing; The 6-aluminium alloy sleeve barrel; The 7-infrared laser; The 8-screened film; The 9-coaxial wire; The 10-aluminum alloy casing; 11-induced electricity pole piece.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited to this.
As shown in Figure 1, the semiconductor material parameter tester of the present embodiment based on surface photovoltaic method comprises LCDs 1, sample stage 2, measuring sonde 3, cantilever 4, casing 5.Wherein sample stage 2 is arranged on casing 5 tops with cantilever 4, and measuring sonde 3 is arranged on cantilever 4 with LCDs 1, and measuring sonde 3 centers are aimed at sample stage 2 centers, and certain gap is left in centre, for placing testing sample.
As shown in Figure 2, measuring sonde 3 comprises aluminium alloy sleeve barrel 6, infrared laser 7, screened film 8, coaxial wire 9, aluminum alloy casing 10, induced electricity pole piece 11.Infrared laser 7 is placed in aluminium alloy sleeve barrel 6, and both are by the pad isolation of thin layer, and a circular hole is arranged at aluminium alloy sleeve barrel 6 tops, for infrared laser institute transponder pulse light, penetrates.Two core shielding lines are welded on two pins of infrared laser 7, enter casing 5 inside from aluminium gold trap cylinder 6 afterbodys through cantilever 4 and are connected with the light-pulse generator driver.That side of screened film 8 conductions sticks on aluminium alloy sleeve barrel 6 end faces with the conduction electrocoagulation slurry of strong cohesive force, and induced electricity pole piece 11 is placed in insulation one side of screened film 8.As shown in Figure 3, the structure of induced electricity pole piece 11 is divided into two parts, a part is handle shape structure 111, another part is disc-shaped structure 112, in measuring sonde, in two-part middle part, bend, disc-shaped structure 112 is placed in a side of screened film 8 insulation, middle porose, the pulsed light of infrared laser 7 emissions by this hole vertical irradiation on the sample be positioned on sample stage; The central copper wire bonding of coaxial wire 9 is on handle shape structure 111.Reach cantilever inside from the space between aluminium alloy sleeve barrel 6 and aluminum alloy casing 10 through measuring sonde 3 afterbodys, then be connected with the input end of charge amplifier.Measuring sonde 3 aluminum alloy casings 10 are cylindrical, and material is aluminium alloy, and its shell mechanism has better played the effect of shielding.
The described a kind of semiconductor material parameter test method based on surface photovoltaic method of the present embodiment, contrary this principle of the polarity of the photovoltage produced while according to P-type semiconductor and N-type semiconductor, being subject to the infrared pulse irradiation, judge the conduction type of semiconductor material according to the positive-negative polarity of the surface photovoltage of the testing sample measured; Corresponding relation according to size and resistivity or the sheet resistance of known semiconductor material surface photovoltage, obtain resistivity or sheet resistance according to the surface photovoltage of the testing sample measured; Conduction type and resistivity or conduction type and the sheet resistance value of last externally output testing sample.
As shown in Figure 4, the above-mentioned tester based on the present embodiment, concrete steps are described below:
(1) semiconductor samples to be measured is positioned on sample stage, the pulsed light of light-pulse generator driver drives infrared laser emission certain frequency, pulsed light is radiated on semiconductor samples;
(2) the semiconductor samples surface inspires very faint photovoltage under pulsed light irradiates, and the collection of induced electricity pole piece, because of the static charge that photovoltage causes, is sent to charge amplifier through coaxial wire;
(3) charge amplifier becomes static charge voltage signal and amplifies, and signal processing circuit is carried out synchronous shaping, polarity judgement, numerical value conversion to the voltage signal after amplifying;
Signal processing circuit is synchronizeed and is amplified with the pulse signal of light-pulse generator driver the voltage signal received, then carry out reading of the judgement of signal positive-negative polarity and crest voltage, finally crest voltage is converted into to the resistivity value of testing sample according to existing semiconductor material surface photovoltage and resistivity correction curve.
(4) signal processing circuit is connected with display screen by a display driver circuit, and positive-negative polarity judged result and the electrical resistivity results of signal are presented on display screen.
Signal processing circuit in the present embodiment comprises the digital collection processor, control module, the polarity processing module, wherein charge amplifier is connected with the polarity processing module with the digital collection processor respectively, the signal of charge amplifier is divided into two-way, one tunnel is input to the digital collection processor and carries out digitized processing, one tunnel is input to the polarity processing module and carries out the polarity processing, the signal that two-way was processed is input to control module again, control module judges the positive-negative polarity of signal on the one hand, on the one hand digitized voltage signal is converted into to resistivity/sheet resistance value, finally outputing to display driver circuit by control module again drives LCDs to show result.
Can implement the technology that the present invention describes by various means.For instance, these technology may be implemented in hardware, firmware, software or its combination.For the hardware implementation scheme, processing module may be implemented in one or more special ICs (ASIC), PLC, digital signal processor (DSP), programmable logic device (PLD), ready-made programmable gate array (FPGA), processor, controller, microcontroller, electronic installation, other through design with the electronic unit or its combination of carrying out function described in the invention in.
For firmware and/or implement software scheme, the module of available execution function described herein (for example, process, step, flow process etc.) is implemented described technology.Firmware and/or software code can be stored in storer and by processor and carry out.Storer may be implemented in processor or processor outside.
One of ordinary skill in the art will appreciate that: realize that the hardware that all or part of step of said method embodiment can be relevant by programmed instruction completes, aforesaid program can be stored in a computer read/write memory medium, this program, when carrying out, is carried out the step that comprises said method embodiment; And aforesaid storage medium comprises: various media that can be program code stored such as ROM, RAM, magnetic disc or CDs.
Above-described embodiment is preferably embodiment of the present invention; but embodiments of the present invention are not restricted to the described embodiments; other any do not deviate from change, the modification done under Spirit Essence of the present invention and principle, substitutes, combination, simplify; all should be equivalent substitute mode, within being included in protection scope of the present invention.
Claims (10)
1. the semiconductor material parameter tester based on surface photovoltaic method, comprise casing, cantilever, sample stage, measuring sonde, and described cantilever, sample stage are arranged on casing, and measuring sonde is arranged on cantilever, and the measuring sonde end of probe is above sample stage; It is characterized in that, be provided with infrared laser, induced electricity pole piece in described measuring sonde, the pulsed light of infrared laser emission certain frequency is through the perforate on the induced electricity pole piece, and vertical irradiation is on the sample be positioned on sample stage; Be provided with charge amplifier, signal processing circuit in cantilever, charge amplifier is connected with the induced electricity pole piece, the induced electricity pole piece is for being captured in the static charge that pulsed light excites the photovoltage on lower sample surfaces to cause, charge amplifier sends to signal processing circuit after electric charge is amplified, and signal processing circuit externally outputs test result after signal is processed.
2. the semiconductor material parameter tester based on surface photovoltaic method according to claim 1, it is characterized in that, described tester also comprises display screen and display driver circuit, display driver circuit is connected with signal processing circuit, for driving the result after display screen display processing circuit processes.
3. the semiconductor material parameter tester based on surface photovoltaic method according to claim 1, it is characterized in that, be provided with infrared laser, induced electricity pole piece, coaxial wire, screened film, aluminium alloy sleeve barrel, aluminum alloy casing, two core shielding lines in described measuring sonde, infrared laser is placed in aluminium alloy sleeve barrel, both are by a pad isolation, one circular hole is arranged at the aluminium alloy sleeve barrel top, for infrared laser institute transponder pulse light, penetrates; Two core shielding lines are welded on two pins of infrared laser, from aluminium gold trap cylinder afterbody, pass, and with the light-pulse generator driver that is arranged on box house, are connected; That side of screened film conduction sticks on the aluminium alloy sleeve barrel end face, and a side of insulation is provided with the induced electricity pole piece; Coaxial wire is welded on the output terminal of induced electricity pole piece, from the space between aluminium alloy sleeve barrel and aluminum alloy casing, passes, and with the input end of charge amplifier in being arranged on cantilever, is connected.
4. the semiconductor material parameter tester based on surface photovoltaic method according to claim 3, is characterized in that, the wavelength of described infrared laser is 0.895-0.91 μ m;
It is 20-30Hz that described light-pulse generator driver produces pulse signal frequency, and pulse width is adjustable in 200ns-240 μ s scope, and voltage is adjustable in the 10-17V scope, and output momentary pulse power is 50-60W;
Described screened film is a water white film, and thickness is 0.1-0.2mm, and one side insulate, and another side conducts electricity, and the one side of its conduction is starched the end face that sticks on aluminium alloy sleeve barrel by conduction electrocoagulation.
5. the semiconductor material parameter tester based on surface photovoltaic method according to claim 1, it is characterized in that, the structure of described induced electricity pole piece is divided into two parts, a part is handle shape structure, and another part is the disc-shaped structure, in measuring sonde, in two-part middle part, bend, the disc-shaped structure is placed in that side of screened film insulation, middle porose, the pulsed light of infrared laser emission by this hole vertical irradiation on the sample be positioned on sample stage; The central copper wire bonding of coaxial wire is on handle shape structure.
6. the semiconductor material parameter tester based on surface photovoltaic method according to claim 5, is characterized in that, described induced electricity pole piece is the beryllium-bronze material, chrome-faced.
7. the semiconductor material parameter test method based on surface photovoltaic method, it is characterized in that, contrary this principle of the polarity of the photovoltage produced while according to P-type semiconductor and N-type semiconductor, being subject to the infrared pulse irradiation, judge the conduction type of semiconductor material according to the positive-negative polarity of the surface photovoltage of the testing sample measured; Corresponding relation according to size and resistivity or the sheet resistance of known semiconductor material surface photovoltage, obtain resistivity or sheet resistance according to the surface photovoltage of the testing sample measured; Conduction type and resistivity or conduction type and the sheet resistance value of last externally output testing sample.
8. the semiconductor material parameter test method based on surface photovoltaic method according to claim 7, is characterized in that, step is as follows:
(1) semiconductor samples to be measured is positioned on sample stage, the pulsed light of light-pulse generator driver drives infrared laser emission certain frequency, pulsed light is radiated on semiconductor samples;
(2) the semiconductor samples surface inspires photovoltage under pulsed light irradiates, and the collection of induced electricity pole piece, because of the static charge that photovoltage causes, is sent to charge amplifier through coaxial wire;
(3) charge amplifier becomes static charge voltage signal and amplifies, and signal processing circuit is carried out synchronous shaping, polarity judgement, numerical value conversion to the voltage signal after amplifying, and obtains conduction type and resistivity or conduction type and the sheet resistance value of testing sample;
(4) externally output test result.
9. the semiconductor material parameter test method based on surface photovoltaic method according to claim 8, it is characterized in that, in described step (3), signal processing circuit is synchronizeed and is amplified with the pulse signal of light-pulse generator driver the voltage signal received, then carry out reading of the judgement of signal positive-negative polarity and crest voltage, finally crest voltage is converted into to resistivity or the sheet resistance value of testing sample according to existing semiconductor material surface photovoltage and resistivity or sheet resistance calibration curve.
10. the semiconductor material parameter test method based on surface photovoltaic method according to claim 8, it is characterized in that, in described step (4), signal processing circuit is connected with display screen by a display driver circuit, and the positive-negative polarity judged result of signal, resistivity or sheet resistance result are presented on display screen.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310404941.7A CN103439641B (en) | 2013-09-06 | 2013-09-06 | Based on semiconductor material parameter tester and the method for testing of surface photovoltaic method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310404941.7A CN103439641B (en) | 2013-09-06 | 2013-09-06 | Based on semiconductor material parameter tester and the method for testing of surface photovoltaic method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103439641A true CN103439641A (en) | 2013-12-11 |
| CN103439641B CN103439641B (en) | 2016-02-10 |
Family
ID=49693346
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310404941.7A Active CN103439641B (en) | 2013-09-06 | 2013-09-06 | Based on semiconductor material parameter tester and the method for testing of surface photovoltaic method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103439641B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913635A (en) * | 2014-04-08 | 2014-07-09 | 中国人民解放军军械工程学院 | System for measuring surface resistivity of material on high-temperature condition |
| CN105158568A (en) * | 2015-08-28 | 2015-12-16 | 广州市昆德科技有限公司 | Capacitance-charging-discharging-principle-based semiconductor resistivity surveying instrument and surveying method |
| CN111829989A (en) * | 2019-04-23 | 2020-10-27 | 中国科学院大连化学物理研究所 | Detection method for surface photovoltage spectrum with enhanced spatial resolution |
| CN111913090A (en) * | 2020-07-22 | 2020-11-10 | 杭州电子科技大学 | Non-contact type method for judging conductivity type of semiconductor material |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003344480A (en) * | 2002-05-30 | 2003-12-03 | Sanyo Electric Co Ltd | Semiconductor device measuring instrument and semiconductor device measuring method |
| TW200540912A (en) * | 2003-03-14 | 2005-12-16 | Accent Optical Tech Inc | Method and device for determining of a characteristic of a semiconductor sample |
| CN1777984A (en) * | 2003-03-28 | 2006-05-24 | Qc塞路斯公司 | Real-time in-line testing of semiconductor wafers |
| US20120074981A1 (en) * | 2010-09-29 | 2012-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for device parameter measurement |
| CN203433085U (en) * | 2013-09-06 | 2014-02-12 | 广州市昆德科技有限公司 | Semiconductor material parameter tester based on surface photovoltage method |
-
2013
- 2013-09-06 CN CN201310404941.7A patent/CN103439641B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003344480A (en) * | 2002-05-30 | 2003-12-03 | Sanyo Electric Co Ltd | Semiconductor device measuring instrument and semiconductor device measuring method |
| TW200540912A (en) * | 2003-03-14 | 2005-12-16 | Accent Optical Tech Inc | Method and device for determining of a characteristic of a semiconductor sample |
| CN1777984A (en) * | 2003-03-28 | 2006-05-24 | Qc塞路斯公司 | Real-time in-line testing of semiconductor wafers |
| US20120074981A1 (en) * | 2010-09-29 | 2012-03-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for device parameter measurement |
| CN203433085U (en) * | 2013-09-06 | 2014-02-12 | 广州市昆德科技有限公司 | Semiconductor material parameter tester based on surface photovoltage method |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103913635A (en) * | 2014-04-08 | 2014-07-09 | 中国人民解放军军械工程学院 | System for measuring surface resistivity of material on high-temperature condition |
| CN103913635B (en) * | 2014-04-08 | 2015-07-15 | 中国人民解放军军械工程学院 | System for measuring surface resistivity of material on high-temperature condition |
| CN105158568A (en) * | 2015-08-28 | 2015-12-16 | 广州市昆德科技有限公司 | Capacitance-charging-discharging-principle-based semiconductor resistivity surveying instrument and surveying method |
| CN105158568B (en) * | 2015-08-28 | 2018-03-02 | 广州市昆德科技有限公司 | Semiconductor resistor rate surveying instrument and mapping method based on capacitor charge and discharge principle |
| CN111829989A (en) * | 2019-04-23 | 2020-10-27 | 中国科学院大连化学物理研究所 | Detection method for surface photovoltage spectrum with enhanced spatial resolution |
| CN111829989B (en) * | 2019-04-23 | 2024-02-20 | 中国科学院大连化学物理研究所 | Detection method for surface photovoltage spectrum with enhanced spatial resolution |
| CN111913090A (en) * | 2020-07-22 | 2020-11-10 | 杭州电子科技大学 | Non-contact type method for judging conductivity type of semiconductor material |
| CN111913090B (en) * | 2020-07-22 | 2021-04-30 | 杭州电子科技大学 | Non-contact type method for judging conductivity type of semiconductor material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103439641B (en) | 2016-02-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104062527B (en) | Evaluation method of aging degree of operational composite insulator | |
| CN102288891B (en) | Method for extracting parameters of solar cell | |
| CN103439641B (en) | Based on semiconductor material parameter tester and the method for testing of surface photovoltaic method | |
| CN201653545U (en) | Photoelectric detector probe structure and irradiation uniformity tester using same | |
| CN106353344B (en) | Bipolar device ionization and the discriminating conduct of shifted radiation damage defect | |
| CN103439537B (en) | Harmless formula solar cell current-voltage test macro sample clamp | |
| CN106353665A (en) | IGBT (insulated gate bipolar transistor) transient heat characteristic testing device and operation method thereof | |
| CN105637624A (en) | Method and apparatus for non-contact measurement of forward voltage, saturation current density, ideality factor and i-v curves in p-n junctions | |
| CN101609155B (en) | Broad-energy-spectrum pulse gamma detector | |
| CN106814319A (en) | A kind of lithium ion battery self discharge detecting system | |
| CN102996117A (en) | Heat-resistant gas injection multi-parameter logger | |
| CN203433085U (en) | Semiconductor material parameter tester based on surface photovoltage method | |
| CN103344666A (en) | Material heat-conducting property tester | |
| CN204346967U (en) | A kind of water content of soil tester based on change in resistance principle | |
| CN202870004U (en) | Positron annihilation multi-parameter accordance measurement system | |
| CN103439676A (en) | UHF sensor sensitivity detection method | |
| CN108983063A (en) | The test method of crystal silicon solar batteries minority carrier life time | |
| CN104090222B (en) | A kind of original position multifunctional light electrical part probe tester | |
| CN106249122B (en) | The high frequency photoconduction life-span tester and its test method of controllable injection ratio | |
| CN106841317B (en) | Device for measuring conductivity of polluted soil and monitoring change of electrical parameters in electroosmosis process in real time | |
| CN103592585A (en) | Judging method and system for partial discharge position of IGBT power module | |
| CN204346974U (en) | A kind of pulse eddy current probe | |
| CN203405433U (en) | Tester for measuring heat-conducting property of material | |
| CN201252656Y (en) | Time-domain-method-based universal photo-electric device for measuring the service life of the fluorescence | |
| CN206020600U (en) | High frequency method of photoconductivity decay measurement carrier lifetime tester |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |