NL2031362B1 - Method of measuring transient photovoltage of semiconductor photoelectric materials under induction of electric field or magnetic field - Google Patents
Method of measuring transient photovoltage of semiconductor photoelectric materials under induction of electric field or magnetic field Download PDFInfo
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- NL2031362B1 NL2031362B1 NL2031362A NL2031362A NL2031362B1 NL 2031362 B1 NL2031362 B1 NL 2031362B1 NL 2031362 A NL2031362 A NL 2031362A NL 2031362 A NL2031362 A NL 2031362A NL 2031362 B1 NL2031362 B1 NL 2031362B1
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- electric field
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- sample cell
- photovoltage
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- 230000001052 transient effect Effects 0.000 title claims abstract description 54
- 230000005684 electric field Effects 0.000 title claims abstract description 39
- 239000000463 material Substances 0.000 title claims abstract description 38
- 239000004065 semiconductor Substances 0.000 title claims abstract description 17
- 230000006698 induction Effects 0.000 title claims abstract description 14
- 238000000034 method Methods 0.000 title claims abstract description 11
- 238000005259 measurement Methods 0.000 claims abstract description 14
- 239000010445 mica Substances 0.000 claims abstract description 9
- 229910052618 mica group Inorganic materials 0.000 claims abstract description 9
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910001172 neodymium magnet Inorganic materials 0.000 claims abstract description 4
- 238000005516 engineering process Methods 0.000 description 10
- 239000000843 powder Substances 0.000 description 10
- 238000000926 separation method Methods 0.000 description 8
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 230000005012 migration Effects 0.000 description 6
- 238000013508 migration Methods 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 230000005693 optoelectronics Effects 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 230000004044 response Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001699 photocatalysis Effects 0.000 description 2
- 238000007146 photocatalysis Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003344 environmental pollutant Substances 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000013033 photocatalytic degradation reaction Methods 0.000 description 1
- 231100000719 pollutant Toxicity 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/08—Measuring electromagnetic field characteristics
- G01R29/0807—Measuring electromagnetic field characteristics characterised by the application
- G01R29/0814—Field measurements related to measuring influence on or from apparatus, components or humans, e.g. in ESD, EMI, EMC, EMP testing, measuring radiation leakage; detecting presence of micro- or radiowave emitters; dosimetry; testing shielding; measurements related to lightning
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S50/00—Monitoring or testing of PV systems, e.g. load balancing or fault identification
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The present disclosure relates to a method of measuring transient photovoltage of semiconductor photoelectric materials under induction of electric field or magnetic field. The method is completed based on a transient photovoltage measurement system, and the transient photovoltage measurement system is formed by a digital oscilloscope, an Nd: YAG laser, a preamplifier and a sample cell, Wherein each component unit is connected through a BNC data line, the sample cell is formed by an upper electrode, a mica sheet, a photoelectric material layer and a lower electrode from top to bottom, the lower electrode is grounded, a lock-in amplifier provides voltage (electric field) for the sample cell, two neodymium iron boron strong magnets with different polarities provide magnetic fields for the sample cell.
Description
METHOD OF MEASURING TRANSIENT PHOTOVOLTAGE OF
SEMICONDUCTOR PHOTOELECTRIC MATERIALS UNDER
INDUCTION OF ELECTRIC FIELD OR MAGNETIC FIELD
[01] The present disclosure belongs to a technical field of photogenerated charge measurement of semiconductor photoelectric materials, in particular to a method of measuring transient photovoltage of semiconductor photoelectric materials under induction of electric field or magnetic field.
[02] With the depletion of fossil energy and more and more serious environmental pollution, solar energy, as a clean, pollution-free and inexhaustible energy, has entered vision of researchers. Semiconductor optoelectronic materials have broad prospects in the conversion and utilization of solar energy and photocatalytic degradation of pollutants. The study of photogenerated charge behavior of semiconductor optoelectronic materials is one of the basic studies of semiconductor conversion and utilization of solar energy, which has great significance. Surface photovoltage technology and transient photovoltage technology are mature technologies to characterize the generation and separation of photogenerated charges of semiconductor optoelectronic materials. The surface photovoltage technology characterizes a photoelectric response of the photoelectric materials in a certain integration time at different wavelengths. The transient photovoltage technology characterizes a dynamic process of photogenerated charge generation, separation and recombination of photoelectric materials. The existing surface photovoltage technology and the transient photovoltage technology both characterize a migration behavior of photogenerated charge under a self-built electric field of semiconductor optoelectronic materials.
[03] When using semiconductor photoelectric materials for photocatalysis and photocatalysis experiments, the experiments are basically carried out under an action of electric field, magnetic field and so on. Therefore, the transient photovoltage measurement technology is improved to measure the transient photovoltage of semiconductor photoelectric materials under the induction of electric field or magnetic field.
[04] The present disclosure aims to provide a method of measuring transient photovoltage of semiconductor photoelectric materials (Fe203, TiO2, ZnO, BiVO,4, C:N,,
WOs, etc.) under an induction of electric field or magnetic field. The present disclosure is realized based on the transient photovoltage technology. On the basis of the transient photovoltage technology, the electric field or magnetic field is introduced to measure the transient photovoltage induced by the field, and detect the migration behavior of photogenerated charge induced by the electric field or magnetic field.
[05] The measurement of the transient photovoltage of the semiconductor photoelectric materials is completed based on a transient photovoltage measurement system, and the measurement system is formed by a digital oscilloscope, an Nd: YAG laser, a preamplifier and a sample cell, each component unit 1s connected through a BNC data line.
[06] The sample cell is formed by an upper electrode, a mica sheet, a photoelectric material layer and a lower electrode from top to bottom; the upper electrode is FTO (fluorine doped tin oxide) conductive glass, and a thickness of the mica sheet is 10 ~ 30 um; a thickness of the photoelectric material layer is 0.2 ~ 0.5mm; the mica sheet is used as a transparent and insulating material to separate the upper electrode and the photoelectric material sample to form a capacitive structure, which can not only transmit light, but also prevent charge flow between the upper electrode and the sample; the lower electrode 1s FTO conductive glass and grounded.
[07] The digital oscilloscope records test data, and which with a bandwidth of 20 ~ 500MHz and a sampling rate of 0.5 ~ 5G/s; a reference signal output by the Nd: YAG laser is used as a trigger signal of the digital oscilloscope; the digital oscilloscope has a function of "DC/AC detection", and the "AC detection" function is selected here to shield signal baseline rise caused by a voltage (electric field) provided by a lock-in amplifier.
[08] Nd: YAG laser is used as a light source of a test system; an available laser wavelengths are 1064nm, 532nm, 355nm, 266nm, a laser intensity is 10~500ulJ, a laser frequency is 1-20Hz, and a laser pulse period is 5~7ns; a laser incident direction is perpendicular to the upper electrode surface of the sample cell.
[09] The preamplifier as a signal acquisition device collects transient photovoltage signals of the photogenerated charge of the photoelectric material to amplify the transient photovoltage signals and input to the digital oscilloscope.
[10] The magnetic field is provided by two N35 neodymium iron boron strong magnets with different polarities, N and S poles of the two magnets are arranged opposite on the left and right sides of an area surrounded by the upper and lower electrodes of the sample cell; a direction of the magnetic field is parallel to a plane of the upper and lower electrodes, that is, perpendicular to the laser incident direction, and a magnetic induction intensity is 50 ~ 100mT.
[11] The electric field is provided by the lock-in amplifier, which has functions of outputting stable, continuous and adjustable voltage; the BNC data line is used to connect the lock-in amplifier with the upper and lower electrodes of the sample cell; the voltage is applied to the upper and lower electrodes, and an electric field is formed between the upper and lower electrodes. the photoelectric material sample is in the electric field, and the upper electrode potential is higher than the lower electrode potential, which is defined as a positive voltage, otherwise it is a negative voltage; a voltage range applied by the lock-in amplifier is -1~1V.
[12] The test method of transient photovoltage induced by electric field or magnetic field is as follows: the reference signal output by Nd: YAG laser triggers the digital oscilloscope; the laser output by Nd: YAG laser irradiates the photoelectric material and excites the photoelectric material to produce photogenerated charge; the preamplifier collects the transient photovoltage signal of photogenerated charge of photoelectric materials, amplifies the signal and inputs it to the digital oscilloscope; the digital oscilloscope records the transient photovoltage signal from the preamplifier. Firstly, measure the transient photovoltage signal of the photoelectric material without applying the electric field or magnetic field, and then measure the transient photovoltage signal of the photoelectric material after applying the electric field or magnetic field.
[13] Fig. 1 is a schematic diagram of an electric field (a) and a magnetic field (b) applied to a sample cell;
[14] Fig. 2 is a transient photovoltage spectrum of ZnO powder induced by the electric field according to embodiment 1;
[15] Fig. 3 1s a transient photovoltage spectrum of TiO2 powder induced by the electric field according to embodiment 2;
[16] Fig. 4 is a transient photovoltage spectrum of ZnO powder induced by the magnetic field according to embodiment 3;
[17] Fig 5 is a transient photovoltage spectrum of TiO: powder induced by the magnetic field according to embodiment 4.
[18] The present disclosure will be further described in detail below in combination with the embodiments and the accompanying drawings, but is not limited thereto.
[19] Embodiment 1
[20] Atransient photovoltage of commercial ZnO powder induced by an electric field is measured. A Nd: YAG (Dawa-200) laser is used as a system light source, a lock-in amplifier (Stanford, SR830) provides the electric field for a sample cell, a preamplifier (Brookdeal lectronics, 5003) collects signals of the transient photovoltage of a photoelectric material layer of the sample cell, and a digital oscilloscope (Tektronix, TDS 5054) records data collected by the preamplifier, and a mica sheet thickness is 20um; a
ZnO powder thickness is 0.3mm; a laser wavelength is 355nm, a laser intensity is 100ul.
First, a transient photovoltage applied with OV voltage is measured, and then transient photovoltages at -0.1V and 0.1V are measured respectively. A measurement results show that signal peak intensity of signals of the ZnO under different voltages at 2.8x107s remains unchanged, which is a signal peak generated by a rapid separation of photogenerated charges caused by a ZnO self-built electric field, indicating that a separation of photogenerated charges under a self-built electric field is not affected by an external electric field. The intensity of the signal peak at 0.004s increases under an action of negative voltage, decreases under an action of positive voltage, and even has a negative 5 signal response, which is a signal peak caused by a diffusion of photogenerated charge under an action of concentration gradient. The negative voltage induces a migration of photogenerated holes to a surface, positive signals increase, while the positive voltage induces a migration of photogenerated electrons to a surface, which weakens the positive signals and generates a negative signal peak. [BIJ] Embodiment 2
[22] A transient photovoltage of commercial TiO; powder induced by an electric field is measured. A Nd: YAG (dawa-200) laser is used as a system light source, a lock-in amplifier (Stanford, SR830) provides the electric field for a sample cell, a preamplifier (Brookdeal lectronics, 5003) collects signals of the transient photovoltage of a photoelectric material layer of the sample cell, and a digital oscilloscope (Tektronix, TDS 5054) records data collected by the preamplifier, and a mica sheet thickness is 20um; a
TiO: powder thickness is 0.3mm; a laser wavelength is 355nm, a laser intensity is 100,1.
First, a transient photovoltage applied with OV voltage is measured, and then transient photovoltages at -0.1V and 0.1V are measured respectively. A measurement results show that signal peak intensity of signals of the TiO» under different voltages at 3x107s remains unchanged, which is a signal peak generated by a rapid separation of photogenerated charges caused by a TiO: self-built electric field, indicating that a separation of photogenerated charges under a self-built electric field is not affected by an external electric field. The intensity of the signal peak at 1.5x107s increases under an action of negative voltage, decreases under an action of positive voltage, and even has a negative signal response, which is a signal peak caused by a diffusion of photogenerated charge.
The negative voltage induces a migration of photogenerated holes to a surface, positive signals increase, while the positive voltage induces a migration of photogenerated electrons to a surface, and positive signals weakens.
[23] Embodiment 3
[24] A transient photovoltage of commercial ZnO induced by a magnetic field is measured. A Nd: YAG (dawa-200) laser is used as a system light source, a lock-in amplifier (Stanford, SR830) provides the electric field for a sample cell, a preamplifier (Brookdeal lectronics, 5003) collects signals of the transient photovoltage of a photoelectric material layer of the sample cell, and a digital oscilloscope (Tektronix, TDS 5054) records data collected by the preamplifier, and a mica sheet thickness is 20pm; a
ZnO powder thickness is 0.3mm; a laser wavelength is 355nm, a laser intensity is 100uJ.
First, a transient photovoltage without applying the magnetic field is measured, and then a transient optical voltage applying the magnetic field is measured. A magnetic induction intensity is 80mT. A measurement result show that the transient photovoltage intensity increases after applying the magnetic field, and the applied magnetic field promotes a separation of the photogenerated charges.
[25] Embodiment 4
[26] A transient photovoltage of commercial TiO: induced by a magnetic field is measured. A Nd: YAG (dawa-200) laser is used as a system light source, a lock-in amplifier (Stanford, SR830) provides the electric field for a sample cell, a preamplifier (Brookdeal lectronics, 5003) collects signals of the transient photovoltage of a photoelectric material layer of the sample cell, and a digital oscilloscope (Tektronix, TDS 5054) records data collected by the preamplifier, and a mica sheet thickness is 20pm; a
TiO; powder thickness is 0.3mm; a laser wavelength is 355nm, a laser intensity is 100pJ.
First, a transient photovoltage without applying the magnetic field is measured, and then a transient optical voltage applying the magnetic field is measured. Magnetic induction intensity is 80mT. A measurement result show that the transient photovoltage intensity increases after applying the magnetic field, and the applied magnetic field promotes a separation of the photogenerated charges.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2031362A NL2031362B1 (en) | 2022-03-22 | 2022-03-22 | Method of measuring transient photovoltage of semiconductor photoelectric materials under induction of electric field or magnetic field |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL2031362A NL2031362B1 (en) | 2022-03-22 | 2022-03-22 | Method of measuring transient photovoltage of semiconductor photoelectric materials under induction of electric field or magnetic field |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2031362A NL2031362A (en) | 2023-03-09 |
| NL2031362B1 true NL2031362B1 (en) | 2023-03-31 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2031362A NL2031362B1 (en) | 2022-03-22 | 2022-03-22 | Method of measuring transient photovoltage of semiconductor photoelectric materials under induction of electric field or magnetic field |
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2022
- 2022-03-22 NL NL2031362A patent/NL2031362B1/en active
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| NL2031362A (en) | 2023-03-09 |
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