CN202633368U - Patterned substrate and mask for manufacturing same - Google Patents
Patterned substrate and mask for manufacturing same Download PDFInfo
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- CN202633368U CN202633368U CN 201220315633 CN201220315633U CN202633368U CN 202633368 U CN202633368 U CN 202633368U CN 201220315633 CN201220315633 CN 201220315633 CN 201220315633 U CN201220315633 U CN 201220315633U CN 202633368 U CN202633368 U CN 202633368U
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Abstract
The utility model provides a patterned substrate, which comprises a substrate and a periodical pattern located on the substrate, wherein the periodical pattern is formed by stacking m+1 round tables or elliptical tables or polygon tables sequentially from bottom to top in a step shape, or is formed by stacking m round tables or elliptical tables or polygon tables and one cone or elliptical cone or polygon cone sequentially from bottom to top in a step shape; and by means of the microstructure of the periodical pattern, stress caused by crystal lattice mismatched between epitaxial layers such as GaN and the substrate and dislocation density in the epitaxial layers such as GaN can be reduced, the crystal quality of the epitaxial layers such as GaN can be improved, and the luminous brightness of an LED (Light Emitting Diode) can be improved in a better way. The utility model further provides a mask formed by a round array or an elliptical array or a polygon array, wherein each round or elliptical or polygonal area in the array internally comprises m+1 concentric round rings or concentric elliptical rings or concentric polygonal rings with different light transmittance; and by utilization of the mask to manufacture the patterned substrate, the patterned substrate is easy to realize and low in cost.
Description
Technical field
The utility model relates to technical field of semiconductors, particularly a kind of patterned substrate and the mask that is used to make said substrate.
Background technology
With GaN, InGaN and A1GaN is that master's III-V nitride is the semi-conducting material that receives much concern in recent years; The direct band gap of its 1.9eV-6.2eV continuous variable; Excellent physics, chemical stability; Characteristics such as high saturated electrons mobility make it become the most preferably material of laser, light-emitting diode opto-electronic devices such as (LED).
Usually the nitride opto-electronic device is prepared on the Sapphire Substrate, and sapphire and GaN material lattice constant differ 15%, and it is bigger that thermal coefficient of expansion and chemical property also differ.Big lattice mismatch makes the nitride epitaxial layer defect concentration of on Sapphire Substrate, growing bigger, and these defectives can be stretched to adjacent window apertures backward, thereby the defect concentration of GaN active area is increased.When emission wavelength is 410 nanometers; The angle of total reflection of light is 44.8 ° between GaN material and the sapphire, and this makes active area produce nearly 90% light and be limited in the device, is absorbed through repeatedly reflecting; So promptly increased the caloric value of LED, its luminosity is weakened.
In order to alleviate the stress that causes owing to lattice mismatch between GaN epitaxial loayer and the substrate, reduce the dislocation density in the GaN epitaxial loayer, improve the crystal mass of GaN material, improve the luminosity of GaN base LED, the LED industry has been introduced patterned substrate.Said patterned substrate is on substrate, to form micro-structurals such as similar hemisphere, truncated cone-shaped, taper shape, triangular pyramidal, polygonal pyramid shape, cylindricality or some irregular figures through wet method high temperature corrosion or dry etching.Said patterned substrate forms scattering or diffuse reflection through these micro-structurals to light wave, increases the probability that photon is escaped, thereby improves the luminosity of LED.Yet no matter the micro-structural of patterned substrate in the prior art is hemisphere, truncated cone-shaped, taper shape or triangular pyramidal, or other figure, and its surface all is smooth, has no groove, convexity or ladder.In order to reduce the stress that lattice mismatch causes between GaN epitaxial loayer and the substrate better; Reduce the dislocation density in the GaN epitaxial loayer; Improve the crystal mass of GaN material, improve the luminosity of LED better, the work of on the micro-structural of patterned substrate, doing ladder again is imperative.Yet forming the technology more complicated of doing ladder on the patterned substrate again; Craft precision requires high, thereby cost is higher, how under the prerequisite that does not increase cost; Formation has the patterned substrate of the micro-structural of ladder, becomes one of research emphasis of present LED industry.
The utility model content
The mask that the purpose of the utility model provides a kind of patterned substrate and is used to make said substrate adopts a photoetching, secondarily etched technology to form the patterned substrate with notch cuttype micro-structural with said mask, and technology is simple, and cost is low.
The utility model provides a kind of patterned substrate; The periodic pattern that comprises substrate and substrate surface; Said periodic pattern comprises any one in the scenario: m many terrace with edges that m elliptical table that m round platform that m+1 many terrace with edges that m+1 the elliptical table that m+1 the round platform that (1) is stacked gradually by notch cuttype from bottom to up, (2) are stacked gradually by notch cuttype from bottom to up, (3) are stacked gradually by notch cuttype from bottom to up, (4) are stacked gradually by notch cuttype from bottom to up and 1 circular cone that is positioned at round platform topmost, (5) are stacked gradually by notch cuttype from bottom to up and the elliptic cone that is positioned at elliptical table topmost, (6) are stacked gradually by notch cuttype from bottom to up and the polygonal pyramid that is positioned at the many terrace with edges in the top; Wherein m is a natural number, and the span of said m is 1＜m＜1000.
As preferably: the side of said round platform, elliptical table, many terrace with edges, circular cone, elliptic cone or polygonal pyramid also has groove or convexity.
As preferably: said groove or convex shape are square, zigzag or irregularly shaped.
As preferably: i+1 round platform or elliptical table or many terrace with edges are positioned at the top of i round platform or elliptical table or many terrace with edges; And the bottom surface diameter of i+1 round platform or elliptical table or many terrace with edges is less than the end face diameter of i round platform or elliptical table or many terrace with edges, and the span of said i is 1≤i＜m.
As preferably: the side of said circular cone or elliptic cone or polygonal pyramid and the angle of bottom surface are 40 degree-60 degree.
As preferably: the side of said round platform or elliptical table or many terrace with edges and the angle of bottom surface are 40 degree-60 degree.
As preferably: the bottom critical size of said periodic pattern is 2 μ m-5 μ m, highly is 1.5 μ m-5 μ m, and the bottom spacing of adjacent two figures is 3 μ m-10 μ m.
The utility model also provides a kind of mask, and said mask comprises circular array, oval-shaped array or polygon array.
As preferably: each circle, ellipse or the polygonal intra-zone in said circular array, oval-shaped array or the changeable shape array comprises m+1 donut, concentration ellipse ring or polygon ring with one heart respectively.
As preferably: a said m+1 donut or concentration ellipse ring or with one heart the edge of polygon ring also have square, zigzag or erose pattern.
As preferably: i+1 annulus or elliptical ring or polygon ring are positioned at the inboard of i annulus or elliptical ring or polygon ring; And the light transmittance of m+1 annulus of said first annulus or elliptical ring or polygon ring to the or elliptical ring or polygon ring is the arithmetic progression of tolerance non-zero, and the span of said i is 1≤i＜m.
As preferably: the oval or polygonal critical size of said circle is 2 μ m-5 μ m, and the spacing of circular array or oval-shaped array or polygon array is 3 μ m-10 μ m.
Compared with prior art; The patterned substrate of the utility model; M+1 round platform that is stacked gradually by notch cuttype from bottom to up or elliptical table or many terrace with edges are formed; Or m the round platform that is stacked gradually by notch cuttype from bottom to up or elliptical table or many terrace with edges and 1 circular cone or elliptic cone or polygonal pyramid are formed; Can reduce the stress that causes by lattice mismatch between GaN homepitaxy layer and the substrate and the dislocation density in the GaN homepitaxy layer through the periodic pattern micro-structural, improve the crystal mass of GaN homepitaxy layer, improve the luminosity of LED better; What the utility model provided forms mask by circular array or ellipse or polygon array; Its circle or ellipse or polygonal region inside comprise m+1 donut or concentration ellipse ring or concentric polygon ring that light transmittance is different; Utilize this mask to make said patterned substrate, it is low to be easy to realization and cost.
Description of drawings
Fig. 1 a-1c is the sketch map of the mask plate patterns of the utility model specific embodiment.
Fig. 2 a-2c is the sketch map after the substrate photoetching of the utility model specific embodiment.
Fig. 3 a-3c is the structural representation of the patterned substrate of the utility model specific embodiment.
Fig. 4 a-4g is the profile of each processing step in the patterned substrate forming process of the utility model specific embodiment.
Embodiment
The utility model below will combine accompanying drawing to do further to detail:
A lot of details have been set forth in the following description so that make much of the utility model.But the utility model can be implemented much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of the utility model intension, so the utility model does not receive the restriction of following disclosed practical implementation.
Secondly, the utility model utilizes sketch map to be described in detail, when the utility model embodiment is detailed; For ease of explanation; The profile of expression device architecture can be disobeyed general ratio and done local the amplification, and said sketch map is instance, and it should not limit the scope of the utility model protection at this.The three dimensions size that in actual fabrication, should comprise in addition, length, width and the degree of depth.
See also shown in Fig. 3 a-3c; Present embodiment provides a kind of patterned substrate; The periodic pattern 2 that comprises substrate 1 and substrate surface; Said periodic pattern 2 comprises any one in the scenario: m many terrace with edges 21 that m the elliptical table 21 that m the round platform 21 that the many terrace with edge of m+1 of being stacked gradually by notch cuttype from bottom to up of m+1 the elliptical table 21 that m+1 the round platform 21 that (1) is stacked gradually by notch cuttype from bottom to up, (2) are stacked gradually by notch cuttype from bottom to up, (3) 21, (4) are stacked gradually by notch cuttype from bottom to up and 1 circular cone 22 that is positioned at round platform 21 topmost, (5) are stacked gradually by notch cuttype from bottom to up and 1 elliptic cone 22 that is positioned at elliptical table 21 topmost, (6) are stacked gradually by notch cuttype from bottom to up and 1 polygonal pyramid 22 that is positioned at the many terrace with edges 21 in the top; Wherein m is a natural number, and the span of said m is 1＜m＜1000.Wherein i+1 round platform or elliptical table or many terrace with edges are positioned at the top of i round platform or elliptical table or many terrace with edges; And the bottom surface diameter of i+1 round platform or elliptical table or many terrace with edges is less than the end face diameter of i round platform or many terrace with edges, and the span of said i is 1≤i＜m.
Preferably, the side of said round platform or elliptical table or many terrace with edges or circular cone or elliptic cone or polygonal pyramid can have the groove or the convexity of identical or different regular shapes such as square or zigzag simultaneously, and said groove or convexity can also be irregular shapes; Can also have regular shape or erose groove or convexity above some on the side of said round platform or elliptical table or many terrace with edges or circular cone or elliptic cone or polygonal pyramid, not have said regular shape or erose groove or convexity above some.
Preferably, the angle of the side of said circular cone or elliptic cone or polygonal pyramid 22 and bottom surface is 40 degree-60 degree.
Preferably, the angle of the side of said round platform or elliptical table or many terrace with edges 21 and bottom surface is 40 degree-60 degree.
Preferably, the base diameter of said periodic pattern 2 is 2 μ m-5 μ m, highly is 1.5 μ m-5 μ m, and the bottom spacing of periodic pattern is 3 μ m-10 μ m.When said periodic pattern 2 is the round platform of notch cuttype; Its base diameter is the base diameter of the 1st round platform; But when said periodic pattern 2 is the notch cuttype elliptical table; Its base diameter is the major axis of first elliptical table, and when said periodic pattern was the triangular pyramid of notch cuttype, its base diameter was the external diameter of a circle of bottom surface triangle of the 1st triangular pyramid; When said periodic pattern was the polygonal pyramid (the rib number is greater than 3) of notch cuttype, its base diameter was the 1st the polygonal diagonal in polygonal pyramid bottom surface.
Said substrate 1 can be sapphire, carborundum or silicon.The cross section of said many terrace with edges 21 is polygon; Can be regular figure; Also can be irregular figure, the cross section of said many terrace with edges 21 can be polygon or the rule at above-mentioned figure and its edge or the figure that irregular square or zigzag combinations of patterns forms etc. of triangle, square, rectangle, parallelogram, trapezoidal or other type.
The utility model also provides a kind of mask that is used to make patterned substrate; Shown in Fig. 1 a-1c; Said mask comprises by circular array or oval-shaped array or polygon array and forming, and said circle or ellipse or polygon 3 intra-zones comprise the different donut of m+1 light transmittance or concentration ellipse ring or polygon ring 31 with one heart.Wherein i+1 annulus or elliptical ring or polygon ring are positioned at the inboard of i annulus or elliptical ring or polygon ring; The span of said i is 1≤i＜m; Oval or the changeable shape of innermost circle is defined as m+1 annulus or elliptical ring or polygon ring; Outmost annulus or elliptical ring or polygon ring are defined as first annulus or elliptical ring or polygon ring, the said arithmetic progression that is the tolerance non-zero from first donut or elliptical ring or polygon ring to the light transmittance of m+1 donut or elliptical ring or polygon ring.A said m+1 donut or concentration ellipse ring or with one heart the edge of polygon ring can have regular patterns such as identical or different square, zigzag simultaneously, can also be irregular pattern; A said m+1 donut or concentration ellipse ring or with one heart the edge of polygon ring can also have on some pattern not have pattern on some, can be identical or different patterns on figuratum donut or concentration ellipse ring or the concentric polygon ring.
Said circle or oval or polygonal characteristic size are 2 μ m-5 μ m; The spacing of circular array or oval-shaped array or polygon array is 3 μ m-10 μ m, when the characteristic size of said circle is said diameter of a circle, when said oval-shaped characteristic size is a long axis of ellipse; When said polygon is triangle; Its characteristic size is the external diameter of a circle of triangle, when said polygon limit number greater than 3 the time, its characteristic size is its diagonal.
Said polygon can be regular figure; Also can be irregular figure, said polygon can be polygon or the rule at above-mentioned figure and its edge or the figure that irregular square or zigzag combinations of patterns forms etc. of triangle, square, rectangle, parallelogram, trapezoidal or other type.
In the present embodiment; With the mask shown in Fig. 1 a is that the patterned substrate that mask forms shown in Fig. 3 a is an example; Need to prove; Forming the stepped periodicity figure that is made up of circular cone of 2 round platforms with substrate surface among Fig. 4 a-4g is that example is explained, but does not influence the preparation method's that this patent is provided understanding.The manufacture method of patterned substrate under the following brief account:
Shown in Fig. 4 a, a substrate 1 is provided, in the present embodiment; Said substrate is a sapphire, on said substrate 1, applies photoresist 4, when said photoresist 4 is positive glue; Zone between the circle of said mask or the polygon array is complete printing opacity, said tolerance d＜0; If photoresist 4 is negative photoresists, the zone between the circle of said mask or the polygon array is lighttight fully, said tolerance d＞0, and the thickness of said photoresist 2 is the 1-5 micron;
Shown in Fig. 4 b, do mask with said mask, photoetching forms the periodic pattern 41 be 3 cylinders that notch cuttype piles up from bottom to up; M is 2 in the present embodiment; In the wherein said photoetching process, the time for exposure is 1-30 second, and developing time is 1-30 minute; The post bake time is 10 minutes-60 minutes, and the post bake temperature is 80 degree-200 degree;
Next; The said substrate of first step etching forms the periodic pattern that is 3 cylinders that notch cuttype piles up from bottom to up; As shown in table 1, said first step etching adopts dry etching, and the power of the top electrode that etching apparatus is used is 800-1200W; The power of bottom electrode is 500-800W, and first step etch period is 900-1800s.In first step etching technics; Lower electrode power is bigger; The plasma that top electrode produces is gone up by bottom electrode basically and is drawn downwards, so its plasma direction is substantially perpendicular to substrate surface, and promptly synchronous etching photoresist and substrate; Shown in Fig. 4 c, the substrate in the photoresist top of periodic pattern and the window is etched simultaneously; Shown in Fig. 4 d; Follow synchronous etching; The 3rd layer photoresist etches away fully, and its pattern and size are shifted on the second layer photoresist fully, and the pattern of former second layer photoresist and size are transferred on the ground floor photoresist fully; The pattern of former ground floor photoresist and size are transferred on the substrate 1 fully, and substrate surface forms the first rank cylinder; Shown in Fig. 4 e, continue synchronous etching, the photoresist of the second layer etches away fully; Its pattern and size are shifted on the ground floor photoresist fully, and the pattern of former ground floor photoresist and size are transferred on the substrate fully, and substrate surface forms the second rank cylinder on the basis of the first rank cylinder; Shown in Fig. 4 f; Continue synchronous etching, the photoresist of ground floor etches away fully, and its pattern and size are by on the complete translate substrate; Substrate surface forms the 3rd rank cylinder on the basis of the second rank cylinder, thereby forms the periodic pattern of 3 cylinders that are notch cuttype on the said substrate.
Continue the second step etching then, the substrate of etching shown in Fig. 4 f forms 2 round platforms being from bottom to up that notch cuttype piles up and the periodic pattern that is positioned at 1 circular cone on the round platform.The said second step etching adopts dry etching, and the power of the top electrode that etching apparatus is used is 800-1200W, and the power of bottom electrode is 100-300W; The said second step etch period is 100-300s; In the second step etching, the power of bottom electrode is less, so the downward force rate of being divided on each plasma is less; Be that the plasma direction be not to outdiffusion vertically downward; Shown in Fig. 4 g, be etched away at the edge of the stepped cylinder that forms on the substrate each rank cylinder in the second step dry etching behind the first step dry etching, and the height of figure is unaffected basically; Thereby form 2 round platforms that are notch cuttype and the periodic pattern that is positioned at 1 circular cone on the round platform on the said substrate; Through reducing the process time of the second step etching a little, the circular cone above the round platform also can be a round platform, promptly on said substrate, forms to be 3 round platforms that notch cuttype piles up.The utility model can also use the mask shown in Fig. 1 b to form the patterned substrate shown in Fig. 3 b; Adopt above-mentioned preparation method; Utilize different mask; Through adjusting the process time of the second step etching; Can also form on said substrate 1 surface by m+1 the round platform that is from bottom to up that notch cuttype piles up or elliptical table or many terrace with edges; Also the periodic pattern of forming by 1 circular cone on m the round platform that is from bottom to up that notch cuttype piles up or elliptical table or many terrace with edges and round platform or elliptical table or the many terrace with edges or elliptic cone or polygonal pyramid can formed on said substrate 1 surface; The side of said periodic pattern can also be provided with regular or irregular, square or zigzag groove or convexity; The utility model can also adopt different processes
condition to use above-mentioned preparation method to form by m+1 the round platform that is from bottom to up that notch cuttype piles up or elliptical table or many terrace with edges at the substrate surface of other material (like carborundum or silicon etc.), or the periodic pattern of being made up of 1 circular cone on m the round platform that is from bottom to up that notch cuttype piles up or elliptical table or many terrace with edges and round platform or elliptical table or the many terrace with edges or elliptic cone or polygonal pyramid.
Table 1
| First step etching | The second step etching | |
| Boron chloride (sccm) | 40-80 | 40-80 |
| Hydrogen (sccm) | 10-20 | 10-20 |
| Upper electrode power (W) | 800-1200 | 800-1200 |
| Lower electrode power (W) | 500-800 | 100-300 |
| Time (sec) | 900-1800 | 100-300 |
The utility model forms the m that pile up round platform or elliptical table or the many terrace with edge of substrate surface by notch cuttype with said mask; Or the periodic pattern of forming by the m that piles up round platform of notch cuttype or 1 circular cone on elliptical table or many terrace with edges and round platform or elliptical table or the many terrace with edges or oval vertebra or polygonal pyramid; The simple cost of technology is low; Said patterned substrate reduces the stress between GaN epitaxial loayer and the substrate, the dislocation density in the reduction GaN epitaxial loayer, improves the luminosity of LED.
The patterned substrate of the utility model; Comprise substrate and be positioned at the periodic pattern of substrate top; M round platform that said periodic pattern is stacked gradually by notch cuttype from bottom to up or elliptical table or many terrace with edges are formed; Or m the round platform that is stacked gradually by notch cuttype from bottom to up or elliptical table or many terrace with edges and 1 circular cone or elliptic cone or polygonal pyramid are formed; Notch cuttype micro-structural through periodic pattern can reduce the stress that caused by lattice mismatch between GaN homepitaxy layer and the substrate and the dislocation density in the GaN homepitaxy layer, improves the crystal mass of GaN homepitaxy layer, improves the luminosity of LED better; What the utility model provided forms mask by circular array or oval-shaped array or polygon array; Each single circle or ellipse or polygonal region inside comprise m+1 donut or concentration ellipse ring or the concentric polygon ring that light transmittance is different in its circular array or oval-shaped array or the polygon array; Utilize this mask to make said patterned substrate, it is low to be easy to realization and cost.
The above is merely the preferred embodiment of the utility model, and all equalizations of being done according to the utility model claim scope change and modify, and all should belong to the covering scope of the utility model claim.
Claims (13)
1. patterned substrate; The periodic pattern that comprises substrate and substrate surface; It is characterized in that: said periodic pattern comprises any one in the scenario: m many terrace with edges that m elliptical table that m round platform that m+1 many terrace with edges that m+1 the elliptical table that m+1 the round platform that (1) is stacked gradually by notch cuttype from bottom to up, (2) are stacked gradually by notch cuttype from bottom to up, (3) are stacked gradually by notch cuttype from bottom to up, (4) are stacked gradually by notch cuttype from bottom to up and 1 circular cone that is positioned at round platform topmost, (5) are stacked gradually by notch cuttype from bottom to up and the elliptic cone that is positioned at elliptical table topmost, (6) are stacked gradually by notch cuttype from bottom to up and the polygonal pyramid that is positioned at the many terrace with edges in the top; Wherein m is a natural number, and the span of said m is 1＜m＜1000.
2. patterned substrate according to claim 1 is characterized in that: the side of said round platform, elliptical table, many terrace with edges, circular cone, elliptic cone or polygonal pyramid also has groove or convexity.
3. patterned substrate according to claim 2 is characterized in that: said groove or convex shape are square, zigzag or irregularly shaped.
4. patterned substrate according to claim 1; It is characterized in that: i+1 round platform, elliptical table or many terrace with edges are positioned at the top of i round platform, elliptical table or many terrace with edges; And the bottom surface diameter of i+1 round platform, elliptical table or many terrace with edges is less than the end face diameter of i round platform, elliptical table or many terrace with edges, and the span of said i is 1≤i＜m.
5. patterned substrate according to claim 1 is characterized in that: the side of said circular cone, elliptic cone or polygonal pyramid and the angle of bottom surface are 40 degree-60 degree.
6. patterned substrate according to claim 1 is characterized in that: the side of said round platform, elliptical table or many terrace with edges and the angle of bottom surface are 40 degree-60 degree.
7. patterned substrate according to claim 1 is characterized in that: the base diameter of said periodic pattern is 2 μ m-5 μ m, highly is 1.5 μ m-5 μ m, and the bottom spacing of adjacent two figures is 3 μ m-10 μ m.
8. mask that is used to make patterned substrate, it is characterized in that: said mask comprises circular array, oval-shaped array or polygon array.
9. mask according to claim 8 is characterized in that: each circle, ellipse or the polygonal intra-zone in said circular array, oval-shaped array or the changeable shape array comprises m+1 donut, concentration ellipse ring or concentric polygon ring respectively.
10. mask according to claim 9 is characterized in that: the pattern at the edge of a said m+1 donut, concentration ellipse ring or concentric polygon ring is square, zigzag or irregularly shaped.
11. mask according to claim 8; It is characterized in that: i+1 annulus, vesica piscis or polygon ring are positioned at the inboard of i annulus, elliptical ring or polygon ring; And the light transmittance of said first annulus, elliptical ring or m+1 annulus of polygon ring to the or elliptical ring or polygon ring is the arithmetic progression of tolerance non-zero, and the span of said i is 1≤i＜m.
12. mask according to claim 8 is characterized in that: said circle, ellipse, polygonal critical size are 2 μ m-5 μ m, and the spacing of circular array, oval-shaped array or polygon array is 3 μ m-10 μ m.
13. to the described mask of 12 arbitrary claims, it is characterized in that according to Claim 8: said mask is made the described patterned substrate of the said arbitrary claim of claim 1 to 7.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220315633 CN202633368U (en) | 2012-07-02 | 2012-07-02 | Patterned substrate and mask for manufacturing same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220315633 CN202633368U (en) | 2012-07-02 | 2012-07-02 | Patterned substrate and mask for manufacturing same |
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| CN202633368U true CN202633368U (en) | 2012-12-26 |
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| CN 201220315633 Expired - Lifetime CN202633368U (en) | 2012-07-02 | 2012-07-02 | Patterned substrate and mask for manufacturing same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102769082A (en) * | 2012-07-02 | 2012-11-07 | 杭州士兰明芯科技有限公司 | Patterned substrate, formation method of patterned substrate and mask for producing patterned substrate |
| CN103545411A (en) * | 2013-10-30 | 2014-01-29 | 华南理工大学 | LED patterned substrate with main patterns and secondary patterns and LED chip |
| CN105470353A (en) * | 2014-09-09 | 2016-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of patterned substrate |
| WO2023029295A1 (en) * | 2021-09-06 | 2023-03-09 | 淮安澳洋顺昌光电技术有限公司 | Patterned composite substrate and light-emitting element |
-
2012
- 2012-07-02 CN CN 201220315633 patent/CN202633368U/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102769082A (en) * | 2012-07-02 | 2012-11-07 | 杭州士兰明芯科技有限公司 | Patterned substrate, formation method of patterned substrate and mask for producing patterned substrate |
| CN103545411A (en) * | 2013-10-30 | 2014-01-29 | 华南理工大学 | LED patterned substrate with main patterns and secondary patterns and LED chip |
| CN105470353A (en) * | 2014-09-09 | 2016-04-06 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Preparation method of patterned substrate |
| CN105470353B (en) * | 2014-09-09 | 2018-05-08 | 北京北方华创微电子装备有限公司 | The preparation method of patterned substrate |
| WO2023029295A1 (en) * | 2021-09-06 | 2023-03-09 | 淮安澳洋顺昌光电技术有限公司 | Patterned composite substrate and light-emitting element |
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| GR01 | Patent grant | ||
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Granted publication date: 20121226 |