CN113517379A - Patterned substrate, preparation method thereof and LED chip - Google Patents
Patterned substrate, preparation method thereof and LED chip Download PDFInfo
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- CN113517379A CN113517379A CN202110740915.6A CN202110740915A CN113517379A CN 113517379 A CN113517379 A CN 113517379A CN 202110740915 A CN202110740915 A CN 202110740915A CN 113517379 A CN113517379 A CN 113517379A
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- 239000000758 substrate Substances 0.000 title claims abstract description 190
- 238000002360 preparation method Methods 0.000 title abstract description 9
- 230000003287 optical effect Effects 0.000 claims description 41
- 239000010409 thin film Substances 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 21
- 239000004065 semiconductor Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052681 coesite Inorganic materials 0.000 claims description 6
- 229910052906 cristobalite Inorganic materials 0.000 claims description 6
- 239000012788 optical film Substances 0.000 claims description 6
- 229910052594 sapphire Inorganic materials 0.000 claims description 6
- 239000010980 sapphire Substances 0.000 claims description 6
- 229910052682 stishovite Inorganic materials 0.000 claims description 6
- 229910052905 tridymite Inorganic materials 0.000 claims description 6
- 238000007788 roughening Methods 0.000 claims description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 229910009815 Ti3O5 Inorganic materials 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000001039 wet etching Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000000605 extraction Methods 0.000 abstract description 15
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 238000002310 reflectometry Methods 0.000 abstract description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 238000010586 diagram Methods 0.000 description 9
- 239000013078 crystal Substances 0.000 description 5
- 230000001788 irregular Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 238000001579 optical reflectometry Methods 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
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Abstract
The invention discloses a patterned substrate, a preparation method thereof and an LED chip, wherein the patterned substrate comprises: a substrate having opposing first and second face sides; and the plurality of boss-shaped protruding structures are formed on the first surface side of the substrate, the bottom areas of the protruding structures are larger than the top areas of the protruding structures, and the protruding structures are provided with coarsening microstructures on the top surfaces far away from the substrate. The patterned substrate can randomly scatter light incident to the substrate, so that the absorption of the substrate to the incident light is reduced, and the light extraction efficiency is improved; the side wall of the second part of the protruding structure is also provided with a stripe structure, and the stripe structure can also increase the reflectivity of the graph structure to light, so that the light emitting efficiency of the LED chip is further improved.
Description
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a patterned substrate, a preparation method thereof and an LED chip.
Background
In order to suppress the generation and slip of dislocations and obtain epitaxial layers with low dislocation density and high crystal quality, a patterned substrate technology has been developed in the prior art. Patterned substrate technology is used to pattern a microstructure on the surface of a foreign substrate, and then to perform LED material epitaxy on the patterned substrate surface. The patterned substrate forms diffuse reflection or diffuse reflection on light waves through the fine structure of the patterned substrate, so that the escape probability of photons is increased, and the light emitting brightness of the LED is improved. However, with the continuous update of LED products, the common patterned substrate cannot meet the requirement of high brightness of LED chips, and how to further improve the light extraction efficiency of LEDs through the patterned substrate also becomes a technical difficulty.
Disclosure of Invention
In order to solve at least one technical problem in the background art, the invention provides a patterned substrate, a preparation method thereof and an LED chip, which can effectively improve the light extraction efficiency and enhance the brightness of the LED chip.
The technical scheme adopted by the invention is as follows:
according to an aspect of the present invention, there is provided a patterned substrate comprising:
a substrate having opposing first and second face sides; and
the substrate comprises a plurality of boss-shaped protruding structures, the protruding structures are formed on the first surface side of the substrate, the bottom areas of the protruding structures are larger than the top areas of the protruding structures, and the protruding structures are formed with coarsening microstructures on the top surfaces far away from the substrate.
Optionally, in a direction parallel to the substrate, a bottom maximum area of the roughened microstructure is smaller than a top area of the raised structure, and in a thickness direction of the substrate, a maximum height of the roughened microstructure is smaller than a height of the raised structure.
Optionally, in a direction parallel to the substrate, a maximum span of a bottom surface of the roughened microstructure is less than 3 μm, and in a thickness direction of the substrate, a maximum height of the roughened microstructure is less than 3 μm.
Optionally, the diameter of the top surface of the protruding structure is 0-3 μm, and the diameter of the bottom surface of the protruding structure is 0.8-10 μm.
Optionally, the raised structure comprises a first portion and a second portion formed of different materials, and the second portion is located above the first portion.
Optionally, the cross-sectional area of the top surface of the first portion is equal to the cross-sectional area of the bottom surface of the second portion, and the height of the first portion is less than or equal to the height of the second portion.
Optionally, the protruding structure is formed as a circular truncated cone structure, and the included angle θ between the side surface and the bottom surface of the first part1Is smaller than the included angle theta between the side surface and the bottom surface of the second part2。
Optionally, the angle θ between the side surface and the bottom surface of the second part2At 0 °<θ2<90 DEG, the angle theta between the side surface and the bottom surface of the first part1At 0 °<θ1<θ2。
Optionally, the sidewall of the second portion is provided with a stripe structure, and the stripe structure extends from a side of the second portion close to the bottom surface of the substrate to a side of the second portion far from the top surface of the substrate.
Optionally, a width of the stripe structure in a circumferential direction of the protruding structure and a depth perpendicular to the sidewall of the second portion are smaller than a circumferential length of the protruding structure. Optionally, the width of the stripe structure in the circumferential direction of the protruding structure is 0 μm to 1 μm, and the depth of the stripe structure in the direction perpendicular to the side wall of the second portion is 0 μm to 1 μm.
Optionally, the material of the substrate comprises one of sapphire, SiC, Si and ZnO, and the material of the first portion of the raised structure is the same as the material of the substrate.
Optionally, the material of the second portion comprises SiO2、Si3N4、ZnO2、Si、SiC、GaAs、Ti3O5、TiO2One or more of (a).
According to another aspect of the present invention, there is provided a method of manufacturing a patterned substrate, comprising:
providing a substrate having opposite first and second face sides;
forming a plurality of mesa-shaped projection structures on a first surface side of a substrate;
the bottom size of the raised structure is larger than the top size of the raised structure, and the raised structure is provided with a coarsening microstructure on the top surface far away from the substrate.
Optionally, before forming the plurality of raised pattern structures on the surface of the substrate, the method further includes:
forming an optical thin film layer on the surface of the substrate, wherein the material of the optical thin film layer is different from that of the substrate;
roughening the surface of the optical thin film layer to form a roughened microstructure on the surface of the optical thin film layer;
forming a mask layer above the optical thin film layer with the coarsening microstructure;
and etching the optical thin film layer and part of the substrate under the shielding of the mask layer to form a protruding structure, wherein the part of the substrate forms a first part of the protruding structure, and the optical thin film layer forms a second part of the protruding structure.
Optionally, roughening the surface of the optical thin film layer to form a roughened microstructure on the surface of the optical thin film layer, including:
and etching the surface of the optical film layer by wet etching, wherein the etching time is controlled to be 1-1000S.
Optionally, etching the optical thin film layer and a portion of the substrate under the shielding of the mask layer to form a protruding structure, where the portion of the substrate forms a first portion of the protruding structure, and the optical thin film layer forms a second portion of the protruding structure, including:
and performing dry etching on the side wall of the second part of the protruding structure by using selective etching gas, controlling the etching rate in the vertical direction, and forming a stripe structure on the side wall of the second part, wherein the stripe structure extends from the side of the second part close to the bottom surface of the substrate to the side far away from the top surface of the substrate.
Optionally, a width of the stripe structure in a circumferential direction of the protruding structure and a depth perpendicular to the sidewall of the second portion are smaller than a circumferential length of the protruding structure.
The invention also provides an LED chip which comprises a substrate and an epitaxial layer formed on the surface of the substrate, wherein the substrate is the patterned substrate in any scheme, and the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer, wherein the first semiconductor layer, the active layer and the second semiconductor layer are sequentially formed on the first surface side, provided with the pattern, of the patterned substrate.
Compared with the prior art, the patterned substrate, the preparation method thereof and the LED chip have the following beneficial effects that:
the patterned substrate of the present invention comprises a substrate having opposing first and second face sides; and the plurality of boss-shaped protruding structures are formed on the first surface side of the substrate, the bottom size of each protruding structure is larger than the top size of each protruding structure, and the protruding structures are provided with coarsening microstructures on the top surfaces far away from the substrate. The coarsening microstructure is completely irregular and randomly distributed, such as mountain peak-shaped bulges and the like, and can randomly scatter light incident to the substrate, reduce the absorption of the substrate to the incident light and improve the light extraction efficiency.
Furthermore, the protruding structure in the invention comprises a first part and a second part, wherein a stripe structure is further formed on the side wall of the second part, and the stripe structure extends from the side of the second part close to the bottom surface of the substrate to the side far away from the top surface of the substrate, so that the light reflectivity of the protruding structure can be increased, and the light extraction efficiency of the LED chip is further improved.
Furthermore, an included angle between the side surface and the bottom surface of the first part is smaller than that between the side surface and the bottom surface of the second part, so that the lattice dislocation of the epitaxial layer can be reduced, and the crystal quality of the epitaxial layer is improved.
The preparation method of the patterned substrate and the LED chip provided by the invention comprise the patterned substrate, and the scattering rate of light can be increased, and the light extraction efficiency is improved.
Drawings
FIG. 1 is a schematic structural diagram of a patterned substrate according to an embodiment of the present invention;
FIG. 2 is a schematic structural diagram of the patterned substrate according to an embodiment of the present invention;
FIG. 3 is a flow chart of preparing the patterned substrate in an embodiment of the invention;
FIG. 4 is a schematic diagram of a structure for forming an optical thin film layer on a surface of a substrate according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram illustrating roughening of an optical thin film layer to form a roughened microstructure according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram illustrating a mask layer formed on an optical thin film layer according to an embodiment of the present invention;
FIG. 7 is a schematic diagram illustrating a structure of a patterned mask layer formed according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram illustrating an example of etching an optical thin film layer and forming a stripe structure on a sidewall of a second portion of a protrusion structure formed on the optical thin film layer according to an embodiment of the present invention;
FIG. 9 is a schematic structural diagram of a first portion of a substrate etched to form a raised structure according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of the LED chip according to the embodiment of the present invention.
List of reference numerals:
1 patterning a substrate
100 substrate
110 convex structure
111 first part
112 second part
1121 coarsening microstructure
1122 stripe structure
120 optical film layer
130 mask layer
200 epitaxial layer
201 first semiconductor layer
202 active layer
203 second semiconductor layer
301 first electrode
302 second electrode
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
The present embodiment provides a patterned substrate, and referring to fig. 1, the patterned substrate 1 includes a substrate 100, the substrate 100 having a first face side and a second face side opposite to each other; and a plurality of mesa-shaped protruding structures 110, wherein the protruding structures 110 are formed on the first surface side of the substrate 100, the bottom dimension of the protruding structures 110 is larger than the top dimension of the protruding structures 110, and the protruding structures 110 are formed with coarsening microstructures 1121 on the top surface away from the substrate 100.
The substrate 100 includes one of sapphire, SiC, Si, and ZnO, and a sapphire substrate is used in this embodiment. The protruding structure 110 is formed on the first surface side of the substrate 100, and the bottom area of the protruding structure 110 is larger than the top area of the protruding structure 110, and optionally, the diameter of the top surface of the protruding structure 110 is 0-3 μm, and the diameter of the bottom surface of the protruding structure 110 is 0.8-10 μm.
In an alternative embodiment, the protruding structure 110 includes a first portion 111 and a second portion 112 formed above the first portion 111, and the coarsening microstructure 1121 is formed on a surface of the second portion 112. The first portion 111 and the second portion 112 of the raised structure 110 are of different materials. Optionally, the material of the first portion 111 is the same as the material of the substrate 100, and the material of the second portion 112 comprises SiO2、Si3N4、ZnO2、Si、SiC、GaAs、Ti3O5、TiO2One or more of (a). Alternatively, the cross-sectional area of the top surface of the first portion 111 is equal to the cross-sectional area of the bottom surface of the second portion 112, e.g., having a diameter of 0.5-6 μm. The height of the first portion 111 is less than or equal to the height of the second portion 112, e.g., the height of the first portion 111 is between 0 μm and 3 μm; the height of the second portion 112 of the raised structure 110 is between 0.5 μm and 10 μm.
The side surfaces of the first portion 111 are at a smaller angle to the bottom surface than the side surfaces of the second portion 112. Optionally, the angle θ between the side and bottom surfaces of the second portion 1122At 0 °<θ2<90 deg., the angle theta between the side and bottom surfaces of the first portion 1111At 0 °<θ1<θ2. It should be noted that the included angle between the side surface and the bottom surface of the first portion 111 is smaller than the included angle between the side surface and the bottom surface of the second portion 112, so that the lattice dislocation of the epitaxial layer 200 grown on the patterned substrate 1 later can be reduced, and the crystal quality of the epitaxial layer 200 can be improved.
In the embodiment, the roughened microstructure is formed on the top surface of the convex structure, and the shape of the roughened microstructure is completely irregular, so that light incident on the substrate can be randomly scattered, the absorption of the substrate on the incident light is reduced, and the light extraction efficiency is improved. The included angle between the side surface and the bottom surface of the first part is smaller than that between the side surface and the bottom surface of the second part, so that the lattice dislocation of the epitaxial layer can be reduced, and the crystal quality of the epitaxial layer is improved.
Example 2
This embodiment provides a patterned substrate, and referring to fig. 2, the same points of the substrate as those in embodiment 1 are not described herein again, but the differences are:
in this embodiment, the sidewall of the second portion 112 of the bump structure is provided with a stripe structure 1122, and the stripe structure 1122 extends from a side of the second portion 112 close to the bottom surface of the substrate 100 to a side far away from the top surface of the substrate 100. Also, the width of stripe structure 1122 in the circumferential direction of raised structure 110 and the depth perpendicular to the sidewalls of second portion 112 are much smaller than the circumferential length of raised structure 110. In the present embodiment, the width of the stripe structure 1122 in the circumferential direction of the bump structure 110 is 0 μm to 1 μm, and the depth of the stripe structure 1122 in the direction perpendicular to the side wall of the second portion 112 is 0 μm to 1 μm.
Note that, in the present embodiment, the stripe structure 1122 is formed by spacing the grooves and the protrusions, and the width of the stripe structure 1122 refers to the width of the grooves or the protrusions, and the widths of the grooves or the protrusions are equal to each other. The stripe structure 1122 can increase the light-emitting area of the patterned substrate 1, thereby increasing the reflectivity of the patterned substrate and the light-emitting probability, and improving the light-emitting efficiency of the LED.
In this embodiment, a stripe structure is further formed on the sidewall of the second portion of the protruding structure, and the stripe structure can also increase the light reflectivity of the protruding structure, thereby further improving the light extraction efficiency of the LED chip.
Example 3
The present embodiment provides a method for manufacturing a patterned substrate, and refer to fig. 3.
S101: providing a substrate having opposite first and second face sides;
referring to fig. 4, a substrate 100 is provided, and the material of the substrate 100 includes one of sapphire, SiC, Si, and ZnO, and a sapphire substrate is used in the present embodiment.
Referring also to fig. 4, an optical thin film layer 120 is formed on the substrate 100, the optical thin film layer 120 having a thickness of 0.1 μm to 15 μm. Specifically, the optical thin film layer 120 may be formed by chemical vapor deposition, for example, Plasma Enhanced Chemical Vapor Deposition (PECVD).
As an example, the material of the optical thin film layer 120 includes SiO2、Si3N4、ZnO2、Si、SiC、GaAs、Ti3O5、TiO2One or more of (a).
Referring to fig. 5, the surface of the optical thin film layer 120 obtained in fig. 4 is roughened to form a roughened microstructure 1121 on the surface of the optical thin film layer 120. The coarsening microstructures 1121 are formed as microstructures which are completely irregular and randomly distributed, the maximum area of the bottom of the coarsening microstructures 1121 is far smaller than the area of the top of the protruding structure 110 in the direction parallel to the substrate 100, and the maximum height of the coarsening microstructures 1121 is far smaller than the height of the protruding structure 110 in the thickness direction of the substrate 100. Specifically, the maximum span of the bottom surface of coarsening microstructure 1121 in the direction parallel to the substrate 100 is less than 3 μm, and the maximum height of the coarsening microstructure 1121 in the thickness direction of the substrate 100 is less than 3 μm.
And corroding the surface of the optical thin film layer 120 by wet etching, wherein the corrosion time is controlled to be 1-1000S, so as to obtain the coarsening microstructure 1121. Specifically, the optical thin film layer 120 may be etched using HF acid with a concentration of 1%. It should be noted that the coarsening microstructure 1121 may also be implemented by other methods such as pressing, and will not be described herein again.
Referring to fig. 6, after forming roughened microstructures 1121 on the surface of optical thin film layer 120, the method further includes: a mask layer 130 is formed on the surface of the optical thin film layer 120 on which the coarsening microstructure 1121 is formed. The mask layer 130 used in this embodiment is a photoresist, and the thickness of the formed photoresist is 0.5 μm to 5 μm.
Referring to fig. 7, the photoresist layer is etched to form a patterned photoresist layer, the patterned photoresist layer is formed into a plurality of cylindrical photoresists, wherein the distance between two adjacent cylindrical photoresists is 0.5 μm to 10 μm, and the diameter of the bottom of a single cylindrical photoresist is 0.5 μm to 9.5 μm.
S102: forming a plurality of mesa-shaped projection structures on a first surface side of a substrate; the bottom size of the raised structure is larger than the top size of the raised structure, and the raised structure is provided with a coarsening microstructure on the top surface far away from the substrate.
Referring to fig. 8, the lower optical thin film layer 120 is etched under the shielding of the patterned photoresist, and the etching depth is 0.5 μm to 10 μm, so as to form a circular truncated cone structure; the etched optical film layer 120 is formed as the second portion 112 of the protrusion structure 110.
Referring to fig. 9, the etching of the underlying substrate 100 is continued to a depth of 0 μm to 3 μm to form a first portion 111 of the protruding structure 110; in the etching process, the etching rate of the substrate 100 is controlled so that the included angle between the side surface and the bottom surface of the first portion 111 formed by the substrate 100 is smaller than the included angle between the side surface and the bottom surface of the second portion 112 formed by the optical film layer 120. In the present embodiment, the first portion 111 is also formed in a circular truncated cone structure.
It should be noted that, during the etching process of the substrate 100, the photoresist layer on the surface of the optical thin film layer 120 is remained to protect the roughened microstructure 1121 on the surface thereof.
After etching the substrate 100 to form the first portion 111 in a truncated cone shape, the method further includes: the photoresist layer on the surface of the optical thin film layer 120 is removed to obtain the patterned substrate 1 shown in fig. 1.
The method for manufacturing the patterned substrate in this embodiment includes the patterned substrate described in embodiment 1, and can also increase reflection of light incident on the surface of the substrate, improve light extraction efficiency of the LED chip, and simultaneously ensure formation quality of the epitaxial layer and improve light emission brightness.
Example 4
This embodiment also provides a method for manufacturing a patterned substrate, which is the same as that in embodiment 3, and is not repeated herein, except that:
in step S102, referring to fig. 8, the lower optical thin film layer 120 is etched under the shielding of the patterned photoresist, and the etching depth is between 0.5 μm and 10 μm, so as to form a circular truncated cone structure; while forming the circular truncated cone structure, the side wall of the circular truncated cone structure is subjected to dry etching by using selective etching gas, the etching rate in the vertical direction is increased, and a stripe structure 1122 with grooves and protrusions alternated is formed on the side wall of the circular truncated cone structure. The striped structure 1122 extends from the side of the second portion 112 near the bottom surface of the substrate 100 to the side away from the top surface of the substrate 100. Also, the width of stripe structure 1122 in the circumferential direction of raised structure 110 and the depth perpendicular to the sidewalls of second portion 112 are much smaller than the circumferential length of raised structure 110. In the present embodiment, the width of the stripe structure 1122 in the circumferential direction of the bump structure 110 is 0 μm to 1 μm, and the depth of the stripe structure in the direction perpendicular to the side wall of the second portion 112 is 0 μm to 1 μm.
After the substrate 100 is etched to form the first portion 111 of the circular truncated cone shape, the photoresist layer on the surface of the optical thin film layer 120 is removed, and the patterned substrate 1 shown in fig. 2 is obtained.
The method for manufacturing the patterned substrate in this embodiment includes the patterned substrate in embodiment 2, and the reflectivity of the protrusion structure to light can also be increased, so that the light extraction efficiency of the LED chip is further improved.
Example 5
The present embodiment discloses an LED chip, and referring to fig. 10, the LED chip includes a substrate 100 and an epitaxial layer 200 formed on a surface of the substrate 100, where the substrate 100 is the patterned substrate 100 in embodiment 1 or embodiment 2, and the epitaxial layer 200 is formed on a side of the patterned substrate 100 having the protruding structure 110.
Specifically, referring to fig. 10, an epitaxial layer 200 composed of a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203 of the type opposite to that of the first semiconductor layer 201 is sequentially included on one side of the patterned substrate having the pattern; alternatively, the second electrode 302 is formed over the second semiconductor layer 203, and the first electrode 301 is formed over the first semiconductor layer 201. Alternatively, the first semiconductor layer 201 may be an N-type gallium nitride layer, and the second semiconductor layer 203 may be a P-type gallium nitride layer.
The embodiment also provides a preparation method of the LED chip, which comprises the following steps: providing a substrate 100, forming a plurality of raised protruding structures 110 on a surface of the substrate 100 to form the patterned substrate 100 as described in embodiment 1 or embodiment 2;
an epitaxial layer 200 is formed on one side of the patterned substrate 100 having the raised structure 110, and the epitaxial layer 200 includes a first semiconductor layer 201, an active layer 202 and a second semiconductor layer 203 of the opposite type to the first semiconductor layer 201, which are sequentially formed on one side of the patterned substrate 100 having the raised structure.
Since the LED chip in this embodiment includes the patterned substrate described in embodiment 1 or 2, the quality and light extraction efficiency of the epitaxial layer of the LED chip in this embodiment are both greatly improved, and the brightness is significantly increased.
In summary, the patterned substrate of the present invention comprises a substrate having opposing first and second face sides; and the plurality of boss-shaped protruding structures are formed on the first surface side of the substrate, the bottom size of each protruding structure is larger than the top size of each protruding structure, and the protruding structures are provided with coarsening microstructures on the top surfaces far away from the substrate. The coarsening microstructure is completely irregular and randomly distributed, such as mountain peak-shaped bulges and the like, and can randomly scatter light incident to the substrate, reduce the absorption of the substrate to the incident light and improve the light extraction efficiency.
Furthermore, the protruding structure in the invention comprises a first part and a second part, wherein a stripe structure is further formed on the side wall of the second part, and the stripe structure extends from the side of the second part close to the bottom surface of the substrate to the side far away from the top surface of the substrate, so that the light reflectivity of the protruding structure can be increased, and the light extraction efficiency of the LED chip is further improved.
Furthermore, an included angle between the side surface and the bottom surface of the first part is smaller than that between the side surface and the bottom surface of the second part, so that the lattice dislocation of the epitaxial layer can be reduced, and the crystal quality of the epitaxial layer is improved.
The preparation method of the patterned substrate and the LED chip provided by the invention comprise the patterned substrate, and the scattering rate of light can be increased, and the light extraction efficiency is improved.
The specific embodiments are only for explaining the invention, not for limiting the invention, and the skilled in the art can modify the embodiments as required after reading the description, but only by the protection of the patent law within the scope of the claims of the present invention.
Claims (20)
1. A patterned substrate, comprising:
a substrate having opposing first and second face sides; and
the substrate comprises a plurality of boss-shaped protruding structures, the protruding structures are formed on the first surface side of the substrate, the bottom areas of the protruding structures are larger than the top areas of the protruding structures, and the protruding structures are provided with coarsening microstructures on the top surfaces far away from the substrate.
2. The patterned substrate of claim 1, wherein a bottom maximum area of the roughened microstructure is smaller than a top area of the raised structures in a direction parallel to the substrate, and a maximum height of the roughened microstructure is smaller than a height of the raised structures in a thickness direction of the substrate.
3. The patterned substrate of claim 2, wherein the roughened microstructure has a base surface with a maximum span of less than 3 μm in a direction parallel to the substrate and a maximum height of less than 3 μm in a thickness direction of the substrate.
4. The patterned substrate of claim 1, wherein the top surface of the protruding structure has a diameter of 0-3 μm, and the bottom surface of the protruding structure has a diameter of 0.8-10 μm.
5. The patterned substrate of claim 1, wherein the raised structure comprises a first portion and a second portion formed over the first portion.
6. The patterned substrate of claim 1, wherein the raised structures comprise first and second portions formed of different materials, and the second portion is located above the first portion.
7. The patterned substrate according to claim 5 or 6, wherein a cross-sectional area of a top surface of the first portion is equal to a cross-sectional area of a bottom surface of the second portion, and a height of the first portion is equal to or less than a height of the second portion.
8. The patterned substrate of claim 7, wherein the raised structures are formed as truncated cone structures, and the side surfaces of the first portion form an angle θ with the bottom surface1Is smaller than the included angle theta between the side surface and the bottom surface of the second part2。
9. The patterned substrate of claim 8, wherein the side surface of the second portion forms an angle θ with the bottom surface2At 0 °<θ2<90 DEG, the angle theta between the side surface and the bottom surface of the first part1At 0 °<θ1<θ2。
10. The patterned substrate according to claim 5 or 6, wherein the sidewalls of the second portion are provided with stripe structures extending from a side of the second portion close to the bottom surface of the substrate to a side away from the top surface of the substrate.
11. The patterned substrate of claim 10, wherein the width of the stripe structure in the circumferential direction of the raised structures and the depth perpendicular to the sidewalls of the second portion are less than the circumferential length of the raised structures.
12. The patterned substrate according to claim 11, wherein the stripe structure has a width of 0 μm to 1 μm in a circumferential direction of the projection structure and a depth of 0 μm to 1 μm in a direction perpendicular to the side wall of the second portion.
13. The patterned substrate of claim 6, wherein the substrate comprises one of sapphire, SiC, Si, and ZnO, and the first portion of the raised structures comprises the same material as the substrate.
14. The patterned substrate of claim 5 or 6, wherein the material of the second portion comprises SiO2、Si3N4、ZnO2、Si、SiC、GaAs、Ti3O5、TiO2One or more of (a).
15. A method for preparing a patterned substrate, comprising:
providing a substrate having opposing first and second face sides;
forming a plurality of mesa-shaped projection structures on a first surface side of the substrate;
wherein the bottom dimension of the raised structure is larger than the top dimension of the raised structure, and the raised structure is formed with a roughened microstructure on the top surface away from the substrate.
16. The method for preparing the patterned substrate according to claim 15, further comprising, before forming the plurality of raised pattern structures on the surface of the substrate:
forming an optical thin film layer on the surface of the substrate, wherein the material of the optical thin film layer is different from that of the substrate;
roughening the surface of the optical thin film layer to form a roughened microstructure on the surface of the optical thin film layer; forming a mask layer above the optical thin film layer with the coarsening microstructure;
etching the optical film layer and part of the substrate under the shielding of the mask layer to form the protruding structure, wherein,
part of the substrate forms a first part of the raised structure and the optical film layer forms a second part of the raised structure.
17. The method for preparing the patterned substrate according to claim 16, wherein the roughening treatment is performed on the surface of the optical thin film layer to form a roughened microstructure on the surface of the optical thin film layer, and the method comprises:
and corroding the surface of the optical thin film layer by adopting wet etching, wherein the corrosion time is controlled to be 1-1000S.
18. The method of claim 16, wherein the step of forming the protruding structure by etching the optical thin film layer and a portion of the substrate under the mask of the mask layer, wherein a portion of the substrate forms a first portion of the protruding structure, and a portion of the optical thin film layer forms a second portion of the protruding structure comprises:
and carrying out dry etching on the side wall of the second part of the protruding structure by adopting selective etching gas, controlling the etching rate in the vertical direction, and forming a stripe structure on the side wall of the second part, wherein the stripe structure extends from the side of the second part, which is close to the bottom surface of the substrate, to the side far away from the top surface of the substrate.
19. The method of claim 18, wherein a width of the stripe structure in a circumferential direction of the protruding structure and a depth perpendicular to the sidewall of the second portion are smaller than a circumferential length of the protruding structure.
20. An LED chip, comprising a substrate and an epitaxial layer formed on the surface of the substrate, wherein the substrate is the patterned substrate of any one of claims 1 to 14, and the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer of the type opposite to that of the first semiconductor layer, which are sequentially formed on the patterned substrate on the side of the first surface with the pattern.
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