CN103792784A - Mask for patterned substrate, patterned substrate and manufacturing method thereof - Google Patents
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- CN103792784A CN103792784A CN201410058087.8A CN201410058087A CN103792784A CN 103792784 A CN103792784 A CN 103792784A CN 201410058087 A CN201410058087 A CN 201410058087A CN 103792784 A CN103792784 A CN 103792784A
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Abstract
The invention provides a mask for a patterned substrate, the patterned substrate and a manufacturing method thereof. The mask for the patterned substrate comprises a photoetching board, wherein a cell array and a grid are arranged on the photoetching board; the cell array comprises multiple units in mask patterns; the grid is formed by connecting strip-shaped side lines in a crossed mode and comprises multiple grid units formed by encircling of the strip-shaped side lines; a unit in the cell array is arranged inside each grid unit. An LED (light-emitting diode) structure growing on the patterned substrate manufactured by utilizing the mask for the patterned substrate has high crystalline quality and light extraction efficiency, and the LED device is excellent in electrical properties.
Description
Technical field
The invention belongs to technical field of semiconductors, be specifically related to a kind of mask plate, patterned substrate and manufacture method thereof for patterned substrate.
Background technology
Light emitting diode (being called for short LED) is the luminous semi-conductor electricity sub-element of a kind of energy, it is made up of gallium (Ga) and the compound of arsenic (As), phosphorus (P), nitrogen (N), indium (In) conventionally, when adding after forward voltage to light emitting diode, the electronics that is injected into the hole in N district from P district and be injected into P district by N district near PN junction in several microns respectively with the electronics in N district and the hole-recombination in P district, thereby produce the fluorescence of spontaneous radiation.Along with the development of semiconductor lighting technology, LED more and more enters into various lighting fields.
The outstanding advantages such as GaN based light-emitting diode (being called for short GaN-LED) is efficient because having, energy-saving and environmental protection are extensively concerned, it can be grown on the substrates such as silicon, silit, sapphire, and wherein the GaN-LED commercial use using Sapphire Substrate as substrate is the most extensive.But, there is huge lattice mismatch and coefficient of thermal expansion mismatch in Sapphire Substrate and GaN material, thereby cause the GaN material internal of heteroepitaxy to there is very high dislocation desity, it can cause the harmful effects such as Carrier Leakage and non-radiative recombination center increase, thereby reduces the internal quantum efficiency of device; On the other hand, because GaN Refractive Index of Material is higher than Sapphire Substrate and outer enclosure resin, make the photon of active area generation at GaN upper and lower interface generation multiple total reflection, seriously reduce the light extraction efficiency of device.
Patterned substrate (being called for short PSS) is by making the figure with fine structure on Sapphire Substrate surface, then carry out LED material epitaxy on patterned substrate surface, because patterned interface has changed the growth course of GaN material, thereby can suppress the extension of defect to epitaxial surface, and then improve device internal quantum efficiency; Meanwhile, the GaN sapphire interface energy scattering of roughening, from the photon of active area transmitting, makes the photon of total reflection originally have an opportunity to shine device outside, thereby can effectively improve the light extraction efficiency of device.The device parameters that epitaxial material based on patterned substrate is made shows, the luminous power that its optical power levels under 20mA is compared the device of common not patterned Sapphire Substrate making has increased more than 30%, and therefore adopting patterned substrate is to improve a kind of effective ways of GaN-LED light extraction efficiency.
At present, figure on traditional patterned sapphire substrate mainly adopts conical structure, and (also referred to as yurt structure, as shown in Figure 1), the diameter of cone bottom is about 2-3 μ m, highly be about 1-2 μ m, the bottom spacing of adjacent two cones is about 0-1 μ m.But, after the patterned substrate growing epitaxial of use said structure, can there is larger defect at some regional area, because GaN epitaxial growth in this patterned substrate is similar to epitaxial lateral overgrowth, cushion can form nucleus at cone bottom section after bakingout process, along with the raising of growth temperature and growth rate, GaN lateral growth can be more and more obvious, finally can be connected to form burnishing surface at cone top, this growth pattern can make the defects such as the dislocation of bottom generation bend, even concentrate on cone top, form dislocation bunch, serious also can form V-type defect at epitaxial surface, this defect can cause device performance sharply to worsen, especially more obvious with the deterioration performance of antistatic and reverse leakage.
In addition, the cone bottom spacing of this patterned substrate and the variation at inclination angle may cause the part light sending from active area still form total reflection in inside after the reflection of cone, aspect the extraction efficiency of light, still have certain rising space.Therefore, need to develop a kind of patterned substrate, make it in the time carrying out epitaxial growth, reduce defect concentration, improve LED device electric property, improve the light extraction efficiency of LED simultaneously, improve the optical property of LED device.
Summary of the invention
The invention provides a kind of mask plate, patterned substrate and manufacture method thereof for patterned substrate, the LED structure of growing in the patterned substrate of utilizing this patterned substrate mask plate to make has higher crystal mass and light extraction efficiency, LED device electric property excellence.
A kind of patterned substrate mask plate provided by the invention, comprise photolithography plate, on described photolithography plate, comprise cell array and grid, described cell array comprises that several are the unit of mask pattern, described grid is formed by the cross connection of strip sideline, and comprising the grid cell that several are surrounded by described strip sideline, described in each, the inside of grid cell is provided with a unit in described cell array.
Patterned substrate provided by the present invention with mask plate for forming default substrate figure on substrate, and it can be positive mask plate or negative mask plate.
When described patterned substrate mask plate is positive mask plate, described photolithography plate printing opacity, described cell array and grid are light tight, described cell array and grid can directly arrange (as attach) as described on a side surface of photolithography plate.In use, on described substrate, apply positive photoresist, after exposure and developing, the photoresist of below, mask plate light transmission part dissolves, thereby on photoresist, form photoetching offset plate figure (being the figure of lightproof part composition on mask plate), using this photoetching offset plate figure as mask, substrate is being carried out after etching, can on substrate, form substrate figure, can make patterned substrate.
Further, when described patterned substrate mask plate is negative mask plate, described photolithography plate is light tight, and described cell array can be for being formed at the perforate that is mask pattern on described photolithography plate, and described grid can be for being formed at the opening on described photolithography plate.In use, on described substrate, apply negative photoresist, after exposure and developing, the photoresist of mask plate lightproof part below dissolves, thereby on photoresist, form photoetching offset plate figure (being the figure of light transmission part composition on mask plate), using this photoetching offset plate figure as mask, substrate is being carried out after etching, can on substrate, form substrate figure, can make patterned substrate.
The present invention is at planning grid on mask plate for patterned substrate, and make each unit in described cell array be positioned at the grid cell inside of described grid, utilize the patterned substrate of this patterned substrate mask plate made can make the dislocation that between substrate unit, junction produces effectively be suppressed, thereby most of dislocation is ended on the sidewall of substrate unit or the sidewall of grid, therefore can greatly improve crystal mass and the light extraction efficiency of the LED growing in this patterned substrate.
According to patterned substrate mask plate provided by the present invention, described mask pattern is circular, and described grid cell is equilateral triangle, and described unit is positioned at the middle position of described grid cell.
In the present invention, described circle is not limited to conventional circle, and it can also be other shape of similar circle, for example ellipse, many prismatics etc.; The described grid cell minimum unit that described strip sideline surrounds of serving as reasons, described grid cell can be equilateral triangle, and the center of circle of described circle can be positioned at the center of described equilateral triangle grid unit.
Further, described unit can be lighttight disk.Particularly, patterned substrate provided by the invention comprises the photolithography plate of printing opacity with mask plate, on the photolithography plate of described printing opacity, be pasted with disk array and grid, described disk array comprises several lighttight disks, described grid is formed by the sideline cross connection of lighttight strip, described grid comprises the grid cell that several are surrounded by described strip sideline, and described in each, the inside of grid cell is provided with a described disk.
Further, the width in described strip sideline is 0.1-5um, for example, be 1-3um, is for example further 2-3um, the diameter of described circle is 0.1-5um, and for example 1-3um is for example further 2-3um, the length of side of described equilateral triangle is 0.1-10um, and for example 4-8um is for example further 6-8um.
The present invention also provides a kind of patterned substrate, comprise substrate, on described substrate, comprise substrate unit array and substrate grid, described substrate unit array comprises that several are the substrate unit of substrate figure, described substrate grid is formed by the cross connection of carinate sideline, and comprising the substrate grid cell that several are surrounded by described carinate sideline, described in each, the inside of substrate grid cell is provided with a substrate unit in described substrate unit array.
Further, described substrate figure is that cone, Rotary-table or top are the Rotary-table of camber line, and the base diameter of described substrate figure is 0.1-5um, is highly 0.1-5um, and the spacing between adjacent substrate figure bottom is 0.1-5um; The shape of transversal section, described carinate sideline is up-narrow and down-wide shape (can be for example triangle, circular arc, trapezoidal etc.), the bottom width in described carinate sideline is 0.1-5um, be highly 0.1-5um, described substrate grid cell is equilateral triangle, the length of side of described equilateral triangle is 0.1-10um, and described substrate unit is positioned at the middle position of described substrate grid cell.
Further, the base diameter of described substrate figure can be 1-3um, and for example 2-3um can be highly 1-3um, for example 1-1.5um, and angle (being the angle between substrate figure side and bottom surface) can be 10-80 degree, for example 45-80 degree; The bottom width in described carinate sideline can be 1-3um, and for example 2-3um can be highly 1-3um, for example 1-1.5um, and the length of side of described equilateral triangle is 4-8um, for example 6-8um, the base angle in described carinate sideline can be 10-80 degree, for example 45-80 degree.
In the present invention, the arrangement mode of described cell array/substrate unit array can be the arrangement mode of conventional patterned substrate; As long as the arrangement mode of described grid cell/substrate grid cell can make described described in each unit/substrate unit be placed in the inside of grid cell/substrate grid cell.In concrete scheme of the present invention, described grid/substrate grid can be formed by three groups of parallel strip sideline/carinate sideline cross connections, the parallel strip sideline/carinate sideline of each group intersects at an angle, and each one in three groups of parallel strip sideline/carinate sidelines surrounds described grid cell/substrate grid cell.Particularly, in three groups of parallel strip sideline/carinate sidelines, first group can be horizontal distribution, second group can distribute along first group of clockwise 60 degree, the 3rd group can distribute along first group of counterclockwise 60 degree, and respectively organize adjacent two strip sidelines/carinate sideline in parallel strip sideline/carinate sideline and there is identical spacing, now can surround grid cell/substrate grid cell of equilateral triangle.
Further, the each carinate sideline in three groups of form of parallel ridges sidelines intersects at a formation intersection, place, and described intersection is triangular prism shape structure.
Further, described patterned substrate is to utilize above-mentioned arbitrary described patterned substrate mask plate substrate is carried out to photoetching and etching and make.
The present invention also provides a kind of manufacture method of patterned substrate, utilizes above-mentioned arbitrary described patterned substrate mask plate to carry out photoetching and etching to substrate, makes patterned substrate.
Substrate of the present invention can be silicon substrate, silicon carbide substrates, glass substrate or Sapphire Substrate, and the size of described substrate can be 2 inches, 3 inches, 4 inches or large scale more; The photoetching technique that is lithographically this area routine of the present invention, described etching is dry etching or the wet etching of this area routine, further, described dry etching can be inductively coupled plasma (ICP) dry etching.
Particularly, manufacture method provided by the present invention, comprises the steps:
On substrate, apply photoresist;
Utilize above-mentioned arbitrary described patterned substrate mask plate that described photoresist is exposed and developed, on described photoresist, form photoetching offset plate figure;
The substrate that forms described photoetching offset plate figure is carried out to dry etching, on substrate, form after substrate figure, remove photoresist, make patterned substrate.
Particularly, while stating in the use positive mask plate, on substrate, apply positive photoresist; While stating in the use negative mask plate, on substrate, apply negative photoresist.The thickness of described photoresist can be 2-6um, for example 4um.
Further, the etching gas of described dry etching adopts Cl
2and BCl
3, described Cl
2with BCl
3throughput ratio be 1:2-8, for example 1: 4, the RF power of described dry etching was 1500-2500W, for example 2000W, ICP power is 700-1700W, for example 1200W.
Manufacture method provided by the present invention, can also comprise the steps:
On substrate, form restraining barrier;
On described restraining barrier, apply photoresist;
Utilize above-mentioned arbitrary described patterned substrate mask plate that described photoresist is exposed and developed, on described photoresist, form photoetching offset plate figure;
The substrate that forms described photoetching offset plate figure is carried out to wet etching for the first time, on described restraining barrier, form restraining barrier figure;
Remove photoresist, the substrate that forms described restraining barrier figure is carried out to wet etching for the second time, on substrate, form after substrate figure, remove restraining barrier, make patterned substrate.
Further, described restraining barrier can be silicon dioxide layer, and its thickness can be 1-2um.The etching liquid that described wet etching for the first time adopts can be conventional BOE solution (HF:NH
4f=1:6).
Further, the etching liquid that described wet etching for the second time adopts is the mixed solution of phosphoric acid and sulfuric acid, the mass percent concentration of described phosphoric acid is 80-85%, the mass percent concentration of described sulfuric acid is 95-98%, in described mixed solution, the volume ratio of phosphoric acid and sulfuric acid is 1:1-2, for example 1:1.5, the temperature of described wet etching is for the second time 250-300 ℃, for example 280 ℃.The present invention can make by controlling related process parameter in above-mentioned dry etching or wet etching process the patterned substrate of different-shape, and for example can make substrate unit is circular cone or round platform etc.
Patterned substrate provided by the present invention is made simple of mask plate, applicability is strong, it is by the peripheral grid that forms in unit, thereby make to utilize the patterned substrate that this mask plate is made to form substrate grid in substrate unit periphery, it not only can stop the substrate unit extension of dislocation around, and can make the dislocation that between substrate unit, junction produces effectively be suppressed, thereby most of dislocation is ended on the sidewall of substrate unit or the sidewall of substrate grid, thereby crystal mass and the light extraction efficiency growth that can greatly improve the LED growing in this patterned substrate, device electric property excellence.
Accompanying drawing explanation
Fig. 1 is the structural representation of the patterned substrate of prior art;
Fig. 2 is the planar structure schematic diagram of the patterned substrate of the embodiment of the present invention 1;
Fig. 3 is the planar structure schematic diagram of the substrate grid of the embodiment of the present invention 1;
Fig. 4 is the local enlarged diagram of the substrate grid intersection of Fig. 3.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with drawings and Examples of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is the present invention's part embodiment, rather than whole embodiment.Based on the embodiment in the present invention, those of ordinary skills, not making the every other embodiment obtaining under creative work prerequisite, belong to the scope of protection of the invention.
Embodiment 1
One, make patterned substrate mask plate
On a side surface of transparent substrates (being photolithography plate), attach light tight grid and several light tight disks, make patterned substrate mask plate, the figure on mask plate is the figure being made up of light tight grid and light tight disk.
This patterned substrate is with in mask plate, three groups of parallel light tight strip sidelines that light tight grid is about 2um by width are 60 degree cross connections and form, and comprise the identical grid cell of shape and size that several are surrounded by light tight strip sideline, grid cell is equilateral triangle, and the length of side of equilateral triangle is about 6um; The diameter of light tight disk is about 2um, and the middle position of each grid cell inside is pasted with a light tight disk, and the center of circle of light tight disk is positioned at the center of equilateral triangle grid unit.
Two, manufacture patterned substrate
The step that adopts the patterned substrate mask plate of above-mentioned making and utilize dry etching to manufacture patterned substrate comprises:
1, photoetching
Get the Sapphire Substrate of 2 inches, apply thereon after the positive photoresist (as AZ500) that approximately 4 μ m are thick, photoresist is dried, and utilize the patterned substrate mask plate of above-mentioned making photoresist is exposed and develop, on photoresist, form photoetching offset plate figure (by the graph copying of mask plate to photoresist).
2, dry etching
Adopt ICP dry etching to carry out dry etching to the Sapphire Substrate that forms photoetching offset plate figure, wherein etching gas adopts Cl
2and BCl
3, Cl
2with BCl
3throughput ratio be about 1: 4, RF power is about 2000W, ICP power is about 1200W, thereby in Sapphire Substrate, forms substrate figure (transferring in Sapphire Substrate by photoetching offset plate figure), remove photoresist, make patterned substrate.
Adopt scanning electron microscope (SEM) to detect the pattern of the above-mentioned patterned substrate making, planar structure schematic diagram as shown in Figure 2; In this patterned substrate, comprise cone array and grid 102, cone array comprises several conical structures 101, and the base diameter of conical structure 101 is about 2um, is highly about 1.5um; The planar structure schematic diagram of grid 102 as shown in Figure 3, grid 102 is 60 degree cross connections by three groups of parallel carinate sidelines 104 and forms, 104 transversal section, carinate sideline are triangular in shape, the bottom width in carinate sideline 104 is about 2um, highly be about 1.5um, grid 102 comprises the grid cell 103 that several shape and size that surrounded by carinate sideline 104 are identical, grid cell 103 is equilateral triangle, the length of side of equilateral triangle is all about 6um, has a conical structure 102 on the center of each equilateral triangle grid unit 103; And in the grid 102 of this patterned substrate, every three carinate sidelines 104 intersect at a place, form intersection 105, every three intersections 105 form three summits of equilateral triangle grid unit 103, and intersection 105 is triangular prism shape (as shown in Figure 4).
Embodiment 2
The step that the patterned substrate mask plate that adopts embodiment 1 to make utilizes wet etching to manufacture patterned substrate comprises:
1, form restraining barrier
Get 2 inches of Sapphire Substrate, deposit a layer thickness thereon and be the silicon dioxide layer of 1.5 μ m as restraining barrier.
2, photoetching
On silicon dioxide layer, apply after the positive photoresist that 3 μ m are thick, photoresist is dried, and utilize the patterned substrate mask plate that embodiment 1 makes photoresist is exposed and develop, on photoresist, form photoetching offset plate figure.
3, wet etching for the first time
Adopt BOE solution (HF:NH
4f=1:6) Sapphire Substrate that forms photoetching offset plate figure is carried out to wet etching for the first time, on silicon dioxide layer, form restraining barrier figure (transferring on silicon dioxide layer by photoetching offset plate figure), remove subsequently photoresist.
4, wet etching for the second time
The Sapphire Substrate that forms restraining barrier figure is carried out to wet etching for the second time, the mixed solution of the phosphoric acid that wherein etching liquid is 85% and 98% sulfuric acid, in mixed solution, the volume ratio of phosphoric acid and sulfuric acid is 1:1.5, the temperature of etching is 280 ℃, thereby on substrate, form substrate figure, remove subsequently silicon dioxide layer, make the patterned substrate that pattern is identical with embodiment 1.
Embodiment 3
Use in mask plate step in making patterned substrate, three groups of parallel light tight strip sidelines that are about 3um by width except light tight grid are 60 degree cross connections and form, grid cell is equilateral triangle, and the length of side of equilateral triangle is about 8um, and the diameter of light tight disk is about 3um; Manufacture in graphical substrate step Cl
2with BCl
3throughput ratio be about outside 1: 8, the other the same as in Example 1, makes patterned substrate.
Adopt scanning electron microscope (SEM) to detect the pattern of the above-mentioned patterned substrate making, result shows: in this patterned substrate, comprise Rotary-table array and grid, Rotary-table array comprises several Rotary-table structures, the base diameter of Rotary-table structure is about 3um, highly be about 1um, angle (being the angle of Rotary-table side and bottom surface) is about 45 degree, spacing between adjacent Rotary-table structural base is about 4um, grid is 60 degree cross connections by three groups of parallel carinate sidelines and forms, transversal section, carinate sideline is isosceles trapezoid, the bottom width in carinate sideline is about 3um, highly be about 1um, base angle (being the angle between waist and the base of isosceles trapezoid) is about 45 degree, grid comprises the grid cell that several shape and size that surrounded by carinate sideline are identical, grid cell is equilateral triangle, the length of side of equilateral triangle is all about 8um, on the center of each equilateral triangle grid unit, there is a Rotary-table structure.
Reference examples 1
On a side surface of transparent substrates, attach several light tight disks, make patterned substrate mask plate, the diameter of light tight disk is 2um, and the arrangement mode of light tight disk is identical with embodiment 1.
Adopt the patterned substrate mask plate of above-mentioned making and utilize the photoetching of embodiment 1 and dry etch step to manufacture patterned substrate, adopt scanning electron microscope to detect the pattern of the patterned substrate making, result shows: in this patterned substrate, comprise cone array and grid, cone array comprises several conical structures, the base diameter of conical structure is 2um, is highly 1.5um.
Test example 1
Adopt identical conventional LED growth technique (two-step approach growth pattern), the LED structure of growing in the patterned substrate making in embodiment 1 and reference examples 1 respectively, specifically comprise: the GaN cushion that forms 20nm in the patterned substrate first making in embodiment 1 and reference examples 1, then on GaN cushion, form the plain GaN layer of 2um, then on plain GaN layer, form the GaN layer of the N-shaped doping of 1.5um, growing InGaN/GaN multi-quantum pit structure (8 pairs) subsequently, the AlGaN layer of the p-type doping of regrowth 30nm and 300nm mix magnesium GaN layer, finally make p-type Ohmic contact and N-shaped Ohmic contact, make LED structure, the LED structure of growing in the patterned substrate that embodiment 1 and reference examples 1 are made is denoted as respectively LED structure 1 and LED structure 2.
Adopt the above-mentioned LED structure crystal quality making of X-ray diffractometer test, result shows: LED structure 1 is respectively 240 and 245 at the halfwidth of (002) and (102) direction, and LED structure 2 is 290 and 300 at the halfwidth of (002) and (102) direction, the crystal mass that the LED structure of growing in patterned substrate of the present invention is described is thus better than traditional graph Sapphire Substrate, its reason may be because the conical structure in patterned substrate of the present invention is formed with grid around, this grid makes the dislocation that between conical structure, junction produces obtain effective inhibition.
Test example 2
Adopt conventional method that the LED structure 1 in test example 1 and LED structure 2 are made into respectively to the chip that is of a size of 350 μ m × 350 μ m, be denoted as respectively chip 1 and chip 2.
Respectively said chip 1 and chip 2 are passed into after the electric current of 20mA, measure operating voltage and the luminosity of its LED structure, result shows: the operating voltage of the LED structure 1 of chip 1 is 2.95V, luminosity is 32mW, and the operating voltage of the LED structure 2 of chip 2 is 2.99V, luminosity is 28mW, illustrates that thus the light extraction efficiency of the LED structure of growing in patterned substrate of the present invention increases.
In addition, adopt the antistatic tester of LED to carry out antistatic effect test to said chip 1 and chip 2, result shows: the high energy of antistatic voltage breakdown of chip 1 reaches 8000V, and the highest 4000V that can only reach of the antistatic voltage breakdown of chip 2 shows to utilize patterned substrate of the present invention can significantly promote the electric property of LED device thus.
Finally it should be noted that: above each embodiment, only in order to technical scheme of the present invention to be described, is not intended to limit; Although the present invention is had been described in detail with reference to aforementioned each embodiment, those of ordinary skill in the art is to be understood that: its technical scheme that still can record aforementioned each embodiment is modified, or some or all of technical characterictic is wherein equal to replacement; And these modifications or replacement do not make the essence of appropriate technical solution depart from the scope of various embodiments of the present invention technical scheme.
Claims (10)
1. a patterned substrate mask plate, it is characterized in that, comprise photolithography plate, on described photolithography plate, comprise cell array and grid, described cell array comprises that several are the unit of mask pattern, described grid is formed by the cross connection of strip sideline, and comprises the grid cell that several are surrounded by described strip sideline, and described in each, the inside of grid cell is provided with a unit in described cell array.
2. patterned substrate mask plate according to claim 1, is characterized in that, described mask pattern is circular, and described grid cell is equilateral triangle, and described unit is positioned at the middle position of described grid cell.
3. patterned substrate mask plate according to claim 2, is characterized in that, the width in described strip sideline is 0.1-5um, and the diameter of described circle is 0.1-5um, and the length of side of described equilateral triangle is 0.1-10um.
4. a patterned substrate, it is characterized in that, comprise substrate, on described substrate, comprise substrate unit array and substrate grid, described substrate unit array comprises that several are the substrate unit of substrate figure, described substrate grid is formed by the cross connection of carinate sideline, and comprises the substrate grid cell that several are surrounded by described carinate sideline, and described in each, the inside of substrate grid cell is provided with a substrate unit in described substrate unit array.
5. patterned substrate according to claim 4, it is characterized in that, described substrate figure is that cone, Rotary-table or top are the Rotary-table of camber line, and the base diameter of described substrate figure is 0.1-5um, be highly 0.1-5um, the spacing between adjacent substrate figure bottom is 0.1-5um; The shape of transversal section, described carinate sideline is up-narrow and down-wide shape, the bottom width in described carinate sideline is 0.1-5um, be highly 0.1-5um, described substrate grid cell is equilateral triangle, the length of side of described equilateral triangle is 0.1-10um, and described substrate unit is positioned at the middle position of described substrate grid cell.
6. according to the patterned substrate described in claim 4 or 5, it is characterized in that, described patterned substrate is to utilize the arbitrary described patterned substrate mask plate of claim 1-3 substrate is carried out to photoetching and etching and make.
7. a manufacture method for patterned substrate, is characterized in that, comprises the steps:
On substrate, apply photoresist;
Utilize the arbitrary described patterned substrate mask plate of claim 1 to 3 that described photoresist is exposed and developed, on described photoresist, form photoetching offset plate figure;
The substrate that forms described photoetching offset plate figure is carried out to dry etching, on substrate, form after substrate figure, remove photoresist, make patterned substrate.
8. manufacture method according to claim 7, is characterized in that, the etching gas of described dry etching adopts Cl
2and BCl
3, described Cl
2with BCl
3throughput ratio be 1: 2-8, the RF power of described dry etching is 1500-2500W, ICP power is 700-1700W.
9. a manufacture method for patterned substrate, is characterized in that, comprises the steps:
On substrate, form restraining barrier;
On described restraining barrier, apply photoresist;
Utilize the arbitrary described patterned substrate mask plate of claim 1 to 3 that described photoresist is exposed and developed, on described photoresist, form photoetching offset plate figure;
The substrate that forms described photoetching offset plate figure is carried out to wet etching for the first time, on described restraining barrier, form restraining barrier figure;
Remove photoresist, the substrate that forms described restraining barrier figure is carried out to wet etching for the second time, on substrate, form after substrate figure, remove restraining barrier, make patterned substrate.
10. manufacture method according to claim 9, it is characterized in that, the etching liquid that described wet etching for the second time adopts is the mixed solution of phosphoric acid and sulfuric acid, the mass percent concentration of described phosphoric acid is 80-85%, the mass percent concentration of described sulfuric acid is 95-98%, in described mixed solution, the volume ratio of phosphoric acid and sulfuric acid is 1:1-2, and the temperature of described wet etching is for the second time 250-300 ℃.
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| CN106067504A (en) * | 2016-07-27 | 2016-11-02 | 安徽三安光电有限公司 | A kind of patterned substrate and preparation method thereof |
| CN107039566A (en) * | 2017-04-28 | 2017-08-11 | 海迪科（南通）光电科技有限公司 | A kind of rounded triangle patterned substrate |
| CN107342349A (en) * | 2016-04-29 | 2017-11-10 | 上海微电子装备（集团）股份有限公司 | Sapphire pattern substrate and the mask plate and method for making sapphire pattern substrate |
| CN110018610A (en) * | 2019-04-25 | 2019-07-16 | 武汉天马微电子有限公司 | Mask plate, display panel, manufacturing method of display panel and display device |
| CN112750928A (en) * | 2020-12-30 | 2021-05-04 | 广东中图半导体科技股份有限公司 | Bridge chain type graphical sapphire substrate, preparation method and LED epitaxial wafer |
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| CN102064257A (en) * | 2010-09-29 | 2011-05-18 | 苏州纳晶光电有限公司 | Sapphire patterned substrate and preparation method thereof |
| WO2012093601A1 (en) * | 2011-01-07 | 2012-07-12 | 三菱化学株式会社 | EPITAXIAL GROWTH SUBSTRATE AND GaN LED DEVICE |
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| CN106067504B (en) * | 2016-07-27 | 2019-05-17 | 安徽三安光电有限公司 | A kind of patterned substrate and preparation method thereof |
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