CN107039566A - A kind of rounded triangle patterned substrate - Google Patents
A kind of rounded triangle patterned substrate Download PDFInfo
- Publication number
- CN107039566A CN107039566A CN201710295714.3A CN201710295714A CN107039566A CN 107039566 A CN107039566 A CN 107039566A CN 201710295714 A CN201710295714 A CN 201710295714A CN 107039566 A CN107039566 A CN 107039566A
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- China
- Prior art keywords
- rounded triangle
- triangle
- rounded
- substrate
- adjacent
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- 239000000758 substrate Substances 0.000 title claims abstract description 44
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910003978 SiClx Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000005452 bending Methods 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Led Devices (AREA)
Abstract
The present invention relates to a kind of rounded triangle patterned substrate, including a substrate, the substrate surface has the raised or sunken figure of periodization, the base of the raised or sunken figure is rounded triangle and arrangement of compacting, the perpendicular bisector of i.e. each arrangement rounded triangle any side passes through center of the rounded triangle with corresponding adjacent rounded triangle, and there is gap between adjacent rounded triangle, any side frontier juncture corresponding with adjacent rounded triangle of rounded triangle is arranged in the gap axial symmetry.The advantage of the invention is that：Any side side axial symmetry corresponding with adjacent rounded triangle of base rounded triangle of the present invention, keep that dutycycle is constant and arrangement of compacting in the case of, with bigger inter-pattern space, widened the process window of extension, improved the yield and reliability of product；In addition, the more traditional wedge angle triangle of rounded triangle, can be effectively facilitated the epitaxial layer Dislocations bending grown thereon and mutually bury in oblivion, improve epitaxial layer crystal mass.
Description
Technical field
The invention belongs to substrate preparing technical field, more particularly to a kind of rounded triangle is graphical
Substrate.
Background technology
Gallium nitride（GaN）Based high-brightness light-emitting diode（HB-LED）With extensive use, particularly because in solid-state illumination
The application prospect of aspect and develop rapidly.
Although HB-LED has been commercialized, due to LED internal quantum efficiency（IQE）With light eduction rate（LEE）Limitation, makes
Efficient HB-LED is still difficult.The factor that restriction IQE is improved is to have larger lattice between GaN epitaxial layer and epitaxial substrate to lose
With degree and coefficient of thermal expansion mismatch degree, thus have 10 in planar substrate in GaN epitaxial layer8~1010cm-2Dislocation density, cause
Make LED IQE not high.The refractive index of other GaN layer and air is larger, causes in LED active layers photon escape angle too
It is small.Low IQE and LEE limits LED external quantum efficiency（EQE）That is the raising of light efficiency.
Patterned substrate technology is incorporated into GaN epitaxy growth, given birth to the horizontal extension that single epitaxial realizes GaN
It is long, two step extension shortcomings are overcome, threading dislocation density is substantially reduced.Patterned substrate can not only improve LED IQE, together
When can also improve LED LEE.
Through retrieval, the B of patent CN 102925969 disclose a kind of patterned SiC substrate, are included in SiC single crystal substrate
There is a raised or sunken figure of periodization by the formation of the method for plasma etching or wet etching on surface, periodization it is raised or
Concave patterns are times in polygonal cone, Polygonal column shape, many prismatic table shapes, trapezoidal many side platform shapes, trapezoidal round platform, hemispherical or spherical crown
It is a kind of；Periodic pattern is polygonal cone, Polygonal column shape, many prismatic table shapes, trapezoidal many side platform shapes, trapezoidal round platform, hemispherical or ball
Two or more any combination in hat；The SiC substrate of microscopic three-dimensional structural is produced, is improved with 4H-SiC and 6H-
Hetero-epitaxy and the epitaxial quality of 3C-SiC CN homoepitaxies that SiC is the GaN of substrate.The patterned SiC substrate be in order to
Patterned substrate small one by one is formed on substrate, and then forms small diode one by one.
And for overall patterned substrate, preferable patterned substrate is to keep as far as possible fewc- plane area accountings
While,c- plane width need to meet the minimum dimension requirement of extension initial growth.When dimension of picture reduces and keeps c-
In the case that plane area accountings are constant, traditional hemispherical patterned substrate gap is too small, and extension can not high-quality growth.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of integrally-built rounded triangle patterned substrate, keeping
Dutycycle is constant and arrangement of compacting in the case of, with bigger inter-pattern space, it is ensured that the high-quality growth of epitaxial material.
In order to solve the above technical problems, the technical scheme is that：A kind of rounded triangle patterned substrate, it is innovated
Point is：Including a substrate, the substrate surface has the raised or sunken figure of periodization, the base of the raised or sunken figure
For rounded triangle and arrangement of compacting, i.e., the perpendicular bisector of each arrangement rounded triangle any side passes through the rounded triangle
With the center of corresponding adjacent rounded triangle, and between adjacent rounded triangle have gap, arrangement rounded triangle appoint
While frontier juncture corresponding with adjacent rounded triangle is in the gap axial symmetry.
Further, the length cycles of the periodization figure are 100~8000 nm, the base length of side of periodization figure
For 10~5000 nm, the height of periodization figure is that the gap between 0.1~10 μm, adjacent rounded triangle is 50~1000
nm。
Further, the raised or sunken figure is any of fillet triangle table shape or fillet triangular pyramidal.
Further, the length of the radian of the drift angle of the rounded triangle is 0~500 nm.
Further, the substrate is any of sapphire, carborundum, silicon or lithium aluminate.
The advantage of the invention is that：Rounded triangle patterned substrate of the present invention, wherein, the raised or sunken figure of periodization
Base rounded triangle any side side axial symmetry corresponding with adjacent rounded triangle figure, keep dutycycle it is constant simultaneously
And in the case of arrangement of compacting, with bigger inter-pattern space, widened the process window of extension, improve product yield and
Reliability；In addition, the more traditional wedge angle triangle of rounded triangle, can more efficiently promote the epitaxial layer grown thereon
The bending of Dislocations and mutually bury in oblivion, improve the crystal mass of epitaxial layer, at the same also can multiple reflections light, improve chip
Light extraction efficiency.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Fig. 1 is the structural representation of fillet triangle table shape patterned substrate in the present invention.
Fig. 2 is the structural representation of fillet triangular pyramidal patterned substrate in the present invention.
Fig. 3 is the structural representation of insole binding rounded triangle of the present invention.
Fig. 4 is a kind of raised structural representation of rounded triangle mesa-shaped in the present invention.
Fig. 5 is a kind of raised structural representation of rounded triangle taper in the present invention.
Fig. 6 is a kind of structural representation of rounded triangle mesa-shaped pit in the present invention.
Fig. 7 is a kind of structural representation of rounded triangle taper pit in the present invention.
Embodiment
The following examples can make professional and technical personnel that the present invention is more fully understood, but therefore not send out this
It is bright to be limited among described scope of embodiments.
Embodiment
The present embodiment rounded triangle patterned substrate, as shown in Figure 1,2 and 3, including a Sapphire Substrate 1, the substrate 1
There are the raised or sunken fillet triangle table shape 2 of periodization formed by nano-imprinting method or fillet triangular pyramidal 3, each bottom in surface
The length of the radian of the drift angle of side rounded triangle is 0~500 nm.
In embodiment, rounded triangle is in arrangement of compacting, i.e., the perpendicular bisector of each arrangement rounded triangle any side
By center of the rounded triangle with corresponding adjacent rounded triangle, have in error range between adjacent rounded triangle
There is identical gap, the gap is 50~1000nm, arranges any side side corresponding with adjacent rounded triangle of rounded triangle
On the gap axial symmetry；As embodiment, more specifically embodiment be the Cycle Length of periodization figure be 100 ~
8000nm, the base length of side of periodization figure is 10 ~ 5000nm, and the height of periodization figure is 0.1 ~ 10 μm.
In embodiment, the structural representation of the raised fillet triangle table shape 2 of periodization and fillet triangular pyramidal 3, such as Fig. 4~
Shown in 5；The fillet triangle table shape 2 of periodization depression and the structural representation of fillet triangular pyramidal 3, as shown in figs. 6-7.
It is used as those skilled in the art, it should be appreciated that substrate is not limited to Sapphire Substrate 1, also can select carborundum lining
Any of bottom, silicon substrate or lithium aluminate substrate.
The general principle and principal character and advantages of the present invention of the present invention has been shown and described above.The skill of the industry
Art personnel are it should be appreciated that the present invention is not limited to the above embodiments, and described in above-described embodiment and specification is explanation
The principle of the present invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these
Changes and improvements all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and
Its equivalent thereof.
Claims (5)
1. a kind of rounded triangle patterned substrate, it is characterised in that：Including a substrate, the substrate surface has periodization raised
Or concave patterns, the base of the raised or sunken figure is rounded triangle and arrangement of compacting, i.e., each arrangement fillet triangle
The perpendicular bisector of shape any side is by center of the rounded triangle with corresponding adjacent rounded triangle, and adjacent fillet three
There is gap between angular, any side frontier juncture corresponding with adjacent rounded triangle of rounded triangle is arranged in the gap axis pair
Claim.
2. rounded triangle patterned substrate according to claim 1, it is characterised in that：The length of the periodization figure
Cycle is 100~8000 nm, and the base length of side of periodization figure is 10~5000 nm, the height of periodization figure for 0.1~
10 μm, the gap between adjacent rounded triangle is 50~1000 nm.
3. rounded triangle patterned substrate according to claim 1, it is characterised in that：The raised or sunken figure is
Any of fillet triangle table shape or fillet triangular pyramidal.
4. rounded triangle patterned substrate according to claim 1, it is characterised in that：The drift angle of the rounded triangle
Radian length be 0~500 nm.
5. rounded triangle patterned substrate according to claim 1, it is characterised in that：The substrate is sapphire, carbon
Any of SiClx, silicon or lithium aluminate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710295714.3A CN107039566A (en) | 2017-04-28 | 2017-04-28 | A kind of rounded triangle patterned substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710295714.3A CN107039566A (en) | 2017-04-28 | 2017-04-28 | A kind of rounded triangle patterned substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107039566A true CN107039566A (en) | 2017-08-11 |
Family
ID=59538269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710295714.3A Pending CN107039566A (en) | 2017-04-28 | 2017-04-28 | A kind of rounded triangle patterned substrate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN107039566A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050179130A1 (en) * | 2003-08-19 | 2005-08-18 | Hisanori Tanaka | Semiconductor device |
| CN101924173A (en) * | 2010-05-28 | 2010-12-22 | 孙文红 | High lighting effect pattern substrate and manufacturing method thereof |
| CN102925969A (en) * | 2012-11-12 | 2013-02-13 | 上海应用技术学院 | Graphical silicon carbide (SiC) substrate |
| US20130042801A1 (en) * | 2011-08-15 | 2013-02-21 | Thomas Gmitter | Off-axis epitaxial lift off process |
| CN103792784A (en) * | 2014-02-20 | 2014-05-14 | 圆融光电科技有限公司 | Mask for patterned substrate, patterned substrate and manufacturing method thereof |
| CN204029842U (en) * | 2014-07-31 | 2014-12-17 | 苏州新纳晶光电有限公司 | A kind of web substrate that is conducive to improve luminous flux |
| CN106067504A (en) * | 2016-07-27 | 2016-11-02 | 安徽三安光电有限公司 | A kind of patterned substrate and preparation method thereof |
-
2017
- 2017-04-28 CN CN201710295714.3A patent/CN107039566A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050179130A1 (en) * | 2003-08-19 | 2005-08-18 | Hisanori Tanaka | Semiconductor device |
| CN101924173A (en) * | 2010-05-28 | 2010-12-22 | 孙文红 | High lighting effect pattern substrate and manufacturing method thereof |
| US20130042801A1 (en) * | 2011-08-15 | 2013-02-21 | Thomas Gmitter | Off-axis epitaxial lift off process |
| CN102925969A (en) * | 2012-11-12 | 2013-02-13 | 上海应用技术学院 | Graphical silicon carbide (SiC) substrate |
| CN103792784A (en) * | 2014-02-20 | 2014-05-14 | 圆融光电科技有限公司 | Mask for patterned substrate, patterned substrate and manufacturing method thereof |
| CN204029842U (en) * | 2014-07-31 | 2014-12-17 | 苏州新纳晶光电有限公司 | A kind of web substrate that is conducive to improve luminous flux |
| CN106067504A (en) * | 2016-07-27 | 2016-11-02 | 安徽三安光电有限公司 | A kind of patterned substrate and preparation method thereof |
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| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170811 |