CN107170868A - A kind of regular hexagon patterned substrate - Google Patents
A kind of regular hexagon patterned substrate Download PDFInfo
- Publication number
- CN107170868A CN107170868A CN201710294891.XA CN201710294891A CN107170868A CN 107170868 A CN107170868 A CN 107170868A CN 201710294891 A CN201710294891 A CN 201710294891A CN 107170868 A CN107170868 A CN 107170868A
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- China
- Prior art keywords
- regular hexagon
- patterned substrate
- periodization
- raised
- adjacent
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- 239000000758 substrate Substances 0.000 title claims abstract description 50
- 230000001413 cellular effect Effects 0.000 claims abstract description 4
- 229910052594 sapphire Inorganic materials 0.000 claims description 4
- 239000010980 sapphire Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 claims description 3
- 238000003763 carbonization Methods 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 4
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000000605 extraction Methods 0.000 abstract description 3
- 230000008569 process Effects 0.000 abstract description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 9
- 239000013078 crystal Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- JRVCPDVOFCWKAG-UHFFFAOYSA-N Amosulalol hydrochloride Chemical compound Cl.COC1=CC=CC=C1OCCNCC(O)C1=CC=C(C)C(S(N)(=O)=O)=C1 JRVCPDVOFCWKAG-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001534 heteroepitaxy Methods 0.000 description 1
- 238000001657 homoepitaxy Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The present invention relates to a kind of regular hexagon patterned substrate, including a substrate, the substrate surface has the raised or sunken figure of periodization, the base of raised or sunken figure is regular hexagon and is in cellular arrangement of compacting, the perpendicular bisector of i.e. each arrangement regular hexagon any side passes through center of the regular hexagon with corresponding adjacent regular hexagon, and there is same or analogous gap between adjacent regular hexagon, any side frontier juncture corresponding with adjacent regular hexagon of regular hexagon is arranged in the gap axial symmetry.The advantage of the invention is that：Regular hexagon patterned substrate of the present invention, wherein, the any side of the base regular hexagon of the raised or sunken figure of periodization side axial symmetry corresponding with adjacent positive hexagonal pattern, keep that dutycycle is constant and arrangement of compacting in the case of, with bigger inter-pattern space, the process window of extension has been widened, the yield and reliability of product is improved；And then can effectively reduce the epitaxial film dislocation density grown thereon and improve the light extraction efficiency of chip.
Description
Technical field
The invention belongs to substrate preparing technical field, more particularly to a kind of regular hexagon patterned substrate.
Background technology
Generally, the lattice constant mismatch and coefficient of thermal expansion mismatch of the substrate of GaN epitaxial film and bottom are very big, cause
GaN epitaxial film produces up to 109~1010 cm–2Threading dislocation density.High threading dislocation density will influence the light of epitaxial film
Learn and electrology characteristic, so that reliability and the internal quantum efficiency reduction of device.On the other hand, GaN refractive index is more than air
Refractive index (n=1) and substrate refractive index, therefore the critical angle of light escape pyramid is very small, the photon for causing active layer to produce
Only seldom a part is overflowed from surface, and most of photon fades away in inner full-reflection and changes into heat energy.
Using patterned substrate as GaN base light emitting epitaxial substrate, it can promote in transversal epitaxial growth, make lining
Line dislocation 90-degree bent above base map shape in GaN epitaxial layer, prevents line dislocation from reaching film surface, can so drop significantly
The threading dislocation density of low GaN epitaxial film.The exit probability of light can also be increased simultaneously, LED light extraction efficiency is improved.
Through retrieval, patent CN102925969B discloses a kind of patterned SiC substrate, is included in SiC single crystal substrate table
There is the raised or sunken figure of periodization of the method formation by plasma etching or wet etching in face, and periodization is raised or recessed
It is any in polygonal cone, Polygonal column shape, many prismatic table shapes, trapezoidal many side platform shapes, trapezoidal round platform, hemispherical or spherical crown to fall into figure
Kind；Periodic pattern is polygonal cone, Polygonal column shape, many prismatic table shapes, trapezoidal many side platform shapes, trapezoidal round platform, hemispherical or spherical crown
In two or more any combination；The SiC substrate of microscopic three-dimensional structural is produced, is improved with 4H-SiC and 6H-SiC
The epitaxial quality of hetero-epitaxy and 3C-SiC CN homoepitaxies for the GaN of substrate.The patterned SiC substrate be in order to
Patterned substrate small one by one is formed on substrate, and then forms small diode one by one.
And for overall patterned substrate, preferable patterned substrate is to keep as far as possible fewc- plane area accountings
While,c- plane width need to meet the minimum dimension requirement of extension initial growth.When dimension of picture reduces and keeps c-
In the case that plane area accountings are constant, traditional hemispherical patterned substrate gap is too small, and extension can not high-quality growth.
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of integrally-built regular hexagon patterned substrate, keeping accounting for
In the case that sky is than constant and arrangement of compacting, with bigger inter-pattern space, it is ensured that the high-quality growth of epitaxial material.
In order to solve the above technical problems, the technical scheme is that：A kind of regular hexagon patterned substrate, its innovative point
It is：Including a substrate, the substrate surface has the raised or sunken figure of periodization, and the base of the raised or sunken figure is
Regular hexagon and in cellular arrangement of compacting, i.e. the perpendicular bisector of arrangement regular hexagon any side passes through the regular hexagon and phase
The center for the adjacent regular hexagon answered, and between adjacent regular hexagon have gap, arrange regular hexagon any side with it is adjacent
The corresponding frontier juncture of regular hexagon is in the gap axial symmetry.
Further, the length cycles of the periodization figure are 100~8000nm, and the base length of side of periodization figure is
10~5000nm, the height of periodization figure is that the gap between 0.1~10 μm, adjacent regular hexagon is 50~1000nm.
Further, the raised or sunken figure is positive hexagonal platform shape, positive hexagonal pyramidal or positive hexagonal cylindricality
Any of.
Further, the drift angle of the regular hexagon can be with cambered, and the length of the radian is 0~500nm.
Further, the length of side of the regular hexagon can be any in the curve of straight line, the curve of evagination or indent
Kind.
Further, the substrate is any of sapphire, carborundum, silicon or lithium aluminate.
The advantage of the invention is that：
（1）Regular hexagon patterned substrate of the present invention, wherein, any of the base regular hexagon of the raised or sunken figure of periodization
The axial symmetry when corresponding with adjacent positive hexagonal pattern, keep dutycycle constant and arrangement of compacting in the case of, with more
Big inter-pattern space, has widened the process window of extension, improves the yield and reliability of product；And then can effectively reduce
The epitaxial film dislocation density and the light extraction efficiency of raising chip grown thereon；
（2）Regular hexagon patterned substrate of the present invention, wherein, the drift angle of regular hexagon is the regular hexagon of fillet, or side is outer
The regular hexagon of convex curve or side are the regular hexagon in inner concave curve, thus more can effectively suppress outer in patterned substrate
Prolong the dislocation density of layer, improve crystal mass.
Brief description of the drawings
The present invention is further detailed explanation with reference to the accompanying drawings and detailed description.
Fig. 1 is the structural representation of positive hexagonal platform shape patterned substrate in the present invention.
Fig. 2 is the structural representation of positive hexagonal pyramidal patterned substrate in the present invention.
Fig. 3 is the structural representation of positive hexagonal cylindricality patterned substrate in the present invention.
Fig. 4 is that insole binding regular hexagon drift angle of the present invention is the structural representation that circular curve is constituted.
Fig. 5 is the structural representation that the insole binding regular hexagon length of side of the present invention is straight line.
Fig. 6 is the structural representation that the insole binding regular hexagon length of side of the present invention is convex outer curve.
Fig. 7 is the structural representation that the insole binding regular hexagon length of side of the present invention is inner concave curve.
Fig. 8 is a kind of structural representation of regular hexagon columnar projections in the present invention.
Fig. 9 is a kind of raised structural representation of regular hexagon taper in the present invention.
Figure 10 is a kind of raised structural representation of regular hexagon mesa-shaped in the present invention.
Figure 11 is a kind of structural representation of regular hexagon column pit in the present invention.
Figure 12 is a kind of structural representation of regular hexagon taper pit in the present invention.
Figure 13 is a kind of structural representation of regular hexagon mesa-shaped pit in the present invention.
Embodiment
The following examples can make professional and technical personnel that the present invention is more fully understood, but therefore not send out this
It is bright to be limited among described scope of embodiments.
Embodiment
The present embodiment regular hexagon patterned substrate, as shown in Figure 1,2 and 3, including a Sapphire Substrate 1, the table of substrate 1
There are the raised or sunken positive hexagonal platform shape 2 of periodization formed by nano-imprinting method, positive hexagonal pyramidal 3 or positive hexagonal cylindricality in face
4, as shown in figure 5, the length of side of base regular hexagon is straight line.
In embodiment, base regular hexagon is in cellular arrangement of compacting, i.e., each to arrange the vertical of regular hexagon any side
Bisector has gap by center of the regular hexagon with corresponding adjacent regular hexagon, and between adjacent regular hexagon,
There is identical gap, the gap is 50~1000nm in error range；Arrange any side and adjacent regular hexagon of regular hexagon
Corresponding frontier juncture is in the gap axial symmetry；As embodiment, more specifically embodiment is that the Cycle Length of periodization figure is
100~8000nm, the base length of side of periodization figure is 10~5000nm, and the height of periodization figure is 0.1~10 μm.
In embodiment, the structural representation of the raised positive hexagonal platform shape 2 of periodization, positive hexagonal pyramidal 3 and positive hexagonal cylindricality 4
Figure, as shown in figs. 8-10；Positive hexagonal platform shape 2, positive hexagonal pyramidal 3 and the just structural representation of hexagonal cylindricality 4 of periodization depression
Figure, as shown in Figure 11~13.
In addition, the dislocation density in order to effectively suppress patterned substrate upper epitaxial layer, improves crystal mass；Such as Fig. 4
It is shown, the drift angle of base regular hexagon be able to can be set to cambered fillet 5, the length of radian is 0~500nm；Or
As shown in fig. 6, the length of side of regular hexagon can be set into convex outer curve；Or as shown in fig. 7, the length of side of regular hexagon can be set
For inner concave curve.
It is used as those skilled in the art, it should be appreciated that substrate is not limited to Sapphire Substrate 1, also can select carborundum lining
Any of bottom, silicon substrate or lithium aluminate substrate.
The general principle and principal character and advantages of the present invention of the present invention has been shown and described above.The skill of the industry
Art personnel are it should be appreciated that the present invention is not limited to the above embodiments, and described in above-described embodiment and specification is explanation
The principle of the present invention, without departing from the spirit and scope of the present invention, various changes and modifications of the present invention are possible, these
Changes and improvements all fall within the protetion scope of the claimed invention.The claimed scope of the invention by appended claims and
Its equivalent thereof.
Claims (6)
1. a kind of regular hexagon patterned substrate, it is characterised in that：Including a substrate, the substrate surface have periodization raised or
Concave patterns, the base of the raised or sunken figure arranges regular hexagon for regular hexagon and in cellular arrangement of compacting
The perpendicular bisector of any side is by center of the regular hexagon with corresponding adjacent regular hexagon, and between adjacent regular hexagon
With gap, any side frontier juncture corresponding with adjacent regular hexagon of regular hexagon is arranged in the gap axial symmetry.
2. regular hexagon patterned substrate according to claim 1, it is characterised in that：The length week of the periodization figure
Phase is 100~8000nm, and the base length of side of periodization figure is 10~5000nm, and the height of periodization figure is 0.1~10 μm,
Gap between adjacent regular hexagon is 50~1000nm.
3. regular hexagon patterned substrate according to claim 1, it is characterised in that：The raised or sunken figure is just
Any of positive hexagonal platform shape, positive hexagonal pyramidal or positive hexagonal cylindricality.
4. regular hexagon patterned substrate according to claim 1, it is characterised in that：The drift angle of the regular hexagon can be with
With cambered, the length of the radian is 0~500nm.
5. regular hexagon patterned substrate according to claim 1, it is characterised in that：The length of side of the regular hexagon can be with
It is any of curve of straight line, the curve of evagination or indent.
6. regular hexagon patterned substrate according to claim 1, it is characterised in that：The substrate is sapphire, carbonization
Any of silicon, silicon or lithium aluminate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2018/084108 WO2018153388A1 (en) | 2017-02-23 | 2018-04-23 | Hexagonally patterned substrate |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720166354 | 2017-02-23 | ||
| CN2017201663542 | 2017-02-23 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN107170868A true CN107170868A (en) | 2017-09-15 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720197444.8U Active CN206584948U (en) | 2017-02-23 | 2017-03-02 | A kind of nano-patterned substrate |
| CN201710294891.XA Pending CN107170868A (en) | 2017-02-23 | 2017-04-28 | A kind of regular hexagon patterned substrate |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201720197444.8U Active CN206584948U (en) | 2017-02-23 | 2017-03-02 | A kind of nano-patterned substrate |
Country Status (2)
| Country | Link |
|---|---|
| CN (2) | CN206584948U (en) |
| WO (1) | WO2018153388A1 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018153388A1 (en) * | 2017-02-23 | 2018-08-30 | 海迪科（南通）光电科技有限公司 | Hexagonally patterned substrate |
| CN108538969A (en) * | 2018-03-01 | 2018-09-14 | 马鞍山杰生半导体有限公司 | A kind of removing method of aln layer crackle and application |
| CN110752277A (en) * | 2018-07-23 | 2020-02-04 | 固美实国际股份有限公司 | Patterned substrate for light emitting diodes |
| KR20210067386A (en) * | 2019-11-29 | 2021-06-08 | 한국과학기술연구원 | Silicon wafer structures textured with quasi-hexagonal nano-pyramids and method for manufacturing the silicon wafer, and a solar cell comprising the same |
| CN113328019A (en) * | 2021-05-24 | 2021-08-31 | 厦门乾照光电股份有限公司 | Epitaxial growth substrate, semiconductor epitaxial structure and manufacturing method thereof |
| CN114710132A (en) * | 2021-05-26 | 2022-07-05 | 南京大学 | Elastic wave topological insulator with electrically adjustable frequency and functional component |
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| JP2002208757A (en) * | 2001-01-11 | 2002-07-26 | Nichia Chem Ind Ltd | Nitride semiconductor substrate and method for manufacturing it |
| CN103441202A (en) * | 2013-08-08 | 2013-12-11 | 华灿光电股份有限公司 | GaN substrate with graphical DBR structure and manufacturing method thereof |
| CN104810443A (en) * | 2015-04-30 | 2015-07-29 | 华南理工大学 | Arc-shaped hexagram cone graphical LED substrate and LED chip |
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| JP2000223417A (en) * | 1999-01-28 | 2000-08-11 | Sony Corp | Growing method of semiconductor, manufacture of semiconductor substrate, and manufacture of semiconductor device |
| CN102315342A (en) * | 2011-09-02 | 2012-01-11 | 华灿光电股份有限公司 | Novel GaN-based LED (Light Emitting Diode) epitaxial wafer and production method thereof |
| CN103137434B (en) * | 2011-11-23 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | The manufacture method of GaN Film on Si Substrate |
| CN206584948U (en) * | 2017-02-23 | 2017-10-24 | 海迪科（南通）光电科技有限公司 | A kind of nano-patterned substrate |
-
2017
- 2017-03-02 CN CN201720197444.8U patent/CN206584948U/en active Active
- 2017-04-28 CN CN201710294891.XA patent/CN107170868A/en active Pending
-
2018
- 2018-04-23 WO PCT/CN2018/084108 patent/WO2018153388A1/en active Application Filing
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002208757A (en) * | 2001-01-11 | 2002-07-26 | Nichia Chem Ind Ltd | Nitride semiconductor substrate and method for manufacturing it |
| CN103441202A (en) * | 2013-08-08 | 2013-12-11 | 华灿光电股份有限公司 | GaN substrate with graphical DBR structure and manufacturing method thereof |
| CN104810443A (en) * | 2015-04-30 | 2015-07-29 | 华南理工大学 | Arc-shaped hexagram cone graphical LED substrate and LED chip |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018153388A1 (en) * | 2017-02-23 | 2018-08-30 | 海迪科（南通）光电科技有限公司 | Hexagonally patterned substrate |
| CN108538969A (en) * | 2018-03-01 | 2018-09-14 | 马鞍山杰生半导体有限公司 | A kind of removing method of aln layer crackle and application |
| CN110752277A (en) * | 2018-07-23 | 2020-02-04 | 固美实国际股份有限公司 | Patterned substrate for light emitting diodes |
| CN110752277B (en) * | 2018-07-23 | 2020-10-30 | 固美实国际股份有限公司 | Patterned substrate for light emitting diodes |
| KR20210067386A (en) * | 2019-11-29 | 2021-06-08 | 한국과학기술연구원 | Silicon wafer structures textured with quasi-hexagonal nano-pyramids and method for manufacturing the silicon wafer, and a solar cell comprising the same |
| KR102307936B1 (en) | 2019-11-29 | 2021-10-05 | 한국과학기술연구원 | Silicon wafer structures textured with quasi-hexagonal nano-pyramids and method for manufacturing the silicon wafer, and a solar cell comprising the same |
| CN113328019A (en) * | 2021-05-24 | 2021-08-31 | 厦门乾照光电股份有限公司 | Epitaxial growth substrate, semiconductor epitaxial structure and manufacturing method thereof |
| CN113328019B (en) * | 2021-05-24 | 2022-08-23 | 厦门乾照光电股份有限公司 | Epitaxial growth substrate, semiconductor epitaxial structure and manufacturing method thereof |
| CN114710132A (en) * | 2021-05-26 | 2022-07-05 | 南京大学 | Elastic wave topological insulator with electrically adjustable frequency and functional component |
Also Published As
| Publication number | Publication date |
|---|---|
| CN206584948U (en) | 2017-10-24 |
| WO2018153388A1 (en) | 2018-08-30 |
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Application publication date: 20170915 |