CN206003807U - A kind of LED sapphire sheet substrat structure - Google Patents
A kind of LED sapphire sheet substrat structure Download PDFInfo
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- CN206003807U CN206003807U CN201620966938.3U CN201620966938U CN206003807U CN 206003807 U CN206003807 U CN 206003807U CN 201620966938 U CN201620966938 U CN 201620966938U CN 206003807 U CN206003807 U CN 206003807U
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- layer
- sapphire
- glass plate
- substrat structure
- led
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Abstract
The utility model discloses a kind of LED sapphire sheet substrat structure, including sapphire layer, described sapphire layer be internally provided with some tubular conduits, and the two ends of tubular conduit all with sapphire layer ft connection, the top of described sapphire layer is evenly arranged with irregular projection, and the grown on top of sapphire layer has epitaxial layer, irregular projection is coated by described epitaxial layer, the top of described epitaxial layer is uniformly arranged fluted, the bottom of described sapphire layer is fixedly connected with glass plate, and the bottom even of described glass plate is fixedly connected with lenticule.Setting tubular conduit, irregular projection and groove, improve the reflectance of Sapphire Substrate；Setting glass plate, and the bottom even of glass plate is fixedly connected with lenticule so that this substrate has preferable light extraction efficiency, thus improve the light extraction efficiency of light emitting diode；And tubular conduit is set, is conducive to the radiating of sapphire layer.
Description
Technical field
This utility model is related to semiconductor light technical field, specially a kind of LED sapphire sheet substrat structure.
Background technology
LED backing material is the foundation stone of semiconductor lighting industrial technology development, and different backing material needs not
LED growing technology together, chip manufacture technology and device packaging technique, backing material determines semiconductor illumination technique
Development course, the most common substrate currently used for GaN growth is sapphire material, its advantage be chemical stability good,
Do not absorb visible ray, moderate cost, manufacturing technology relative maturity;But, traditional sapphire pattern substrate, however it remains reflective
The low problem of efficiency, thus have impact on the problem of sapphire pattern substrate extensive utilization, for this reason, it is proposed that a kind of LED is blue precious
Flag substrat structure.
Utility model content
The purpose of this utility model is to provide a kind of LED sapphire sheet substrat structure, to solve in above-mentioned background technology
The problem proposing.
For achieving the above object, this utility model provides following technical scheme：A kind of LED sapphire sheet substrat structure, bag
Include sapphire layer, described sapphire layer be internally provided with some tubular conduits, and the two ends of tubular conduit are all and sapphire layer
Ft connection, the top of described sapphire layer is evenly arranged with irregular projection, and the grown on top of sapphire layer has epitaxial layer,
Irregular projection is coated by described epitaxial layer, and the top of described epitaxial layer is uniformly arranged fluted, the bottom of described sapphire layer
It is fixedly connected with glass plate, the bottom even of described glass plate is fixedly connected with lenticule.
Preferably, described epitaxial layer is gallium nitride layer.
Preferably, described groove all diagonally distributes, and the bottom of groove is curved.
Preferably, the spacing between described groove is 1～10um.
Preferably, described glass plate is fluorescent glass plate.
Preferably, the thickness of described epitaxial layer is 0.3～4.8um.
Preferably, the height of described irregular projection is 0.2～3.8um.
Compared with prior art, the beneficial effects of the utility model are：Setting tubular conduit, irregular projection and groove,
So that light is difficult to be transmitted on the interface of sapphire layer and is more easy to be reflected, improve the reflectance of Sapphire Substrate；Setting glass
Glass plate, and the bottom even of glass plate is fixedly connected with lenticule so that this substrate has preferable light extraction efficiency, thus improving
The light extraction efficiency of light emitting diode；And tubular conduit is set, is conducive to the radiating of sapphire layer.
Brief description
Fig. 1 is this utility model structural representation；
Fig. 2 is this utility model groove distribution schematic diagram.
In figure：1 sapphire layer, 2 tubular conduits, 3 irregular projections, 4 epitaxial layers, 5 grooves, 6 glass plates, 7 lenticulees.
Specific embodiment
Below in conjunction with the accompanying drawing in this utility model embodiment, the technical scheme in this utility model embodiment is carried out
Clearly and completely description is it is clear that described embodiment is only a part of embodiment of this utility model rather than whole
Embodiment.Based on the embodiment in this utility model, those of ordinary skill in the art are not under the premise of making creative work
The every other embodiment being obtained, broadly falls into the scope of this utility model protection.
Refer to Fig. 1-2, this utility model provides a kind of technical scheme：A kind of LED sapphire sheet substrat structure, including blue
Gem layer 1, sapphire layer 1 be internally provided with some tubular conduits 2, and the two ends of tubular conduit 2 all with sapphire layer 1 outside
Connection, the top of sapphire layer 1 is evenly arranged with irregular projection 3, and the height of irregular projection 3 is 0.2～3.8um, and blue
The grown on top of gem layer 1 has epitaxial layer 4, and epitaxial layer 4 is gallium nitride layer, and the thickness of epitaxial layer 4 is 0.3～4.8um, epitaxial layer
Irregular projection 3 is coated by 4, and the top of epitaxial layer 4 is uniformly arranged fluted 5, and groove 5 all diagonally distributes, and the bottom of groove 5
Curved, the spacing between groove 5 is 1～10um, and the bottom of sapphire layer 1 is fixedly connected with glass plate 6, and glass plate 6 is fluorescence
Glass plate, the bottom even of glass plate 6 is fixedly connected with lenticule 7, setting tubular conduit 2, irregular projection 3 and groove 5, makes
Light is difficult to be transmitted on the interface of sapphire layer 1 and is more easy to be reflected, improve the reflectance of Sapphire Substrate；Setting glass
Plate 6, and the bottom even of glass plate 6 is fixedly connected with lenticule 7 so that this substrate has preferable light extraction efficiency, thus carrying
The high light extraction efficiency of light emitting diode；And tubular conduit 2 is set, is conducive to the radiating of sapphire layer 1.
While there has been shown and described that embodiment of the present utility model, for the ordinary skill in the art,
It is appreciated that these embodiments can be carried out with multiple changes in the case of without departing from principle of the present utility model and spirit, repair
Change, replace and modification, scope of the present utility model is defined by the appended claims and the equivalents thereof.
Claims (7)
1. a kind of LED sapphire sheet substrat structure, including sapphire layer（1）It is characterised in that：Described sapphire layer（1）Interior
Portion is provided with some tubular conduits（2）, and tubular conduit（2）Two ends all and sapphire layer（1）Ft connection, described sapphire
Layer（1）Top be evenly arranged with irregular projection（3）, and sapphire layer（1）Grown on top have epitaxial layer（4）, described outer
Prolong layer（4）By irregular projection（3）Cladding, described epitaxial layer（4）Top be uniformly arranged fluted（5）, described sapphire layer
（1）Bottom be fixedly connected with glass plate（6）, described glass plate（6）Bottom even be fixedly connected with lenticule（7）.
2. a kind of LED sapphire sheet substrat structure according to claim 1 it is characterised in that：Described epitaxial layer（4）For nitrogen
Change gallium layer.
3. a kind of LED sapphire sheet substrat structure according to claim 1 it is characterised in that：Described groove（5）All oblique
Distribution, and groove（5）Bottom curved.
4. a kind of LED sapphire sheet substrat structure according to claim 1 it is characterised in that：Described groove（5）Between between
Away from for 1～10um.
5. a kind of LED sapphire sheet substrat structure according to claim 1 it is characterised in that：Described glass plate（6）For glimmering
Light glass plate.
6. a kind of LED sapphire sheet substrat structure according to claim 1 it is characterised in that：Described epitaxial layer（4）Thickness
Spend for 0.3～4.8um.
7. a kind of LED sapphire sheet substrat structure according to claim 1 it is characterised in that：Described irregular projection（3）
Height be 0.2～3.8um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620966938.3U CN206003807U (en) | 2016-08-29 | 2016-08-29 | A kind of LED sapphire sheet substrat structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620966938.3U CN206003807U (en) | 2016-08-29 | 2016-08-29 | A kind of LED sapphire sheet substrat structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN206003807U true CN206003807U (en) | 2017-03-08 |
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ID=58194596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201620966938.3U Active CN206003807U (en) | 2016-08-29 | 2016-08-29 | A kind of LED sapphire sheet substrat structure |
Country Status (1)
| Country | Link |
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| CN (1) | CN206003807U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267761A (en) * | 2021-12-22 | 2022-04-01 | 广东中图半导体科技股份有限公司 | Composite patterned substrate for LED growth, epitaxial wafer and preparation method |
-
2016
- 2016-08-29 CN CN201620966938.3U patent/CN206003807U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114267761A (en) * | 2021-12-22 | 2022-04-01 | 广东中图半导体科技股份有限公司 | Composite patterned substrate for LED growth, epitaxial wafer and preparation method |
| CN114267761B (en) * | 2021-12-22 | 2023-10-20 | 广东中图半导体科技股份有限公司 | Composite patterned substrate for LED growth, epitaxial wafer and preparation method |
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Legal Events
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|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |