CN106711300B - A kind of InGaN base yellow light-emitting diode structure - Google Patents
A kind of InGaN base yellow light-emitting diode structure Download PDFInfo
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- CN106711300B CN106711300B CN201611222884.0A CN201611222884A CN106711300B CN 106711300 B CN106711300 B CN 106711300B CN 201611222884 A CN201611222884 A CN 201611222884A CN 106711300 B CN106711300 B CN 106711300B
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- 239000010410 layer Substances 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 238000002360 preparation method Methods 0.000 claims abstract description 18
- 239000002356 single layer Substances 0.000 claims abstract description 5
- 229910002601 GaN Inorganic materials 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims description 2
- 239000010980 sapphire Substances 0.000 claims description 2
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- 238000004020 luminiscence type Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 238000009877 rendering Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 230000000243 photosynthetic effect Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 241001062009 Indigofera Species 0.000 description 1
- 241001025261 Neoraja caerulea Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
- H01L33/24—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate of the light emitting region, e.g. non-planar junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a kind of InGaN base yellow light-emitting diode structures, it includes substrate, successively growth has buffer layer, n-layer, preparation layer, yellow light multiple quantum well layer and p-type layer from the bottom to top on substrate, it is characterized by: preparation layer and yellow light multiple quantum well layer position include the wimble structure of falling hexagonal of certain amount and size, preparation layer is the higher In of In componentxGa(1‑x)N thickness single layer structure, InxGa(1‑x)N layers with a thickness of 50-200nm.The higher In of In componentxGa(1‑x)N thickness single layer structure preparation layer can tensile stress suffered by significant relaxation yellow light multiple quantum well layer, obtain the yellow light multi-quantum well luminescence layer of high quality, the injection efficiency in p-type carrier (hole) can be substantially improved by being located at preparation layer and the wimble structure of falling hexagonal of yellow light multiple quantum wells layer region simultaneously, to promote the luminous efficiency of yellow light-emitting diode.
Description
Technical field
The present invention relates to technical field of semiconductor illumination, more particularly, to a kind of InGaN base yellow light-emitting diode structure.
Background technique
Light emitting diode (LED) obtains people with distinguishing features such as its energy conservation and environmental protection, reliability height and widely pays close attention to and grind
Study carefully.In today that energy crisis and environmental crisis increasingly aggravate, LED lighting technology is classified as national development by numerous countries and regions
Strategy.By research and effort in more than 20 years, LED growth technology, LED chip manufacturing technology and LED encapsulation technology
Rapid progress is obtained, so that LED is widely used in display screen, indicator light, Landscape Lighting, auto lamp, general illumination etc. very much
Field.
Currently, the mode that white light for illumination LED generallys use " blue-ray LED+fluorescent powder " is made, the white light of this form
LED has the disadvantage in that and is difficult to coordinate between 1, colour rendering index, colour temperature and luminous efficiency；2, the limited transfer efficiency of fluorescent powder
Have lost the luminous efficiency of part LED.For this purpose, such as incited somebody to action there has been proposed the technical solution of the multi-colored led synthesis white light of use " red+
White light LEDs are made in five primary-color LED chip packages of yellow+green+green+indigo plant " together.This white light LEDs will be expected to obtain low color temperature, height
The white light source of colour rendering index, high photosynthetic efficiency.However, current blue light, feux rouges and green light electro-optical efficiency all with higher,
And the electro-optical efficiency of green light and yellow light is not high, especially yellow light.It therefore, can be with existing five primary-color LED synthesis white light
The white light of high color rendering index (CRI), low color temperature is obtained, but light efficiency is not high.InGaN and AlGaInP material system can obtain yellow light
LED, AlGaInP material system from feux rouges are changed into yellow light with wavelength, and energy band is changed into indirect band gap by direct band gap, shine
Efficiency declines to a great extent, and physically there is the bottleneck for promoting yellow light light efficiency.And InGaN material system does not have physics bottleneck then.
Summary of the invention
The purpose of the present invention is to provide one kind can make tensile stress suffered by yellow light multiple quantum well layer obtain significant relaxation, from
And the InGaN base yellow light-emitting diode structure for promoting yellow light internal quantum efficiency, obtaining high photosynthetic efficiency.
The object of the present invention is achieved like this:
A kind of InGaN base yellow light-emitting diode structure, including substrate are equipped with buffer layer, on the buffer layer on substrate
It is successively arranged n-layer, preparation layer, yellow light multiple quantum well layer and p-type layer, is characterized in: in preparation layer and yellow light multiple quantum well layer
Centre is equipped with the wimble structure of falling hexagonal of upward opening；The preparation layer is InxGa(1-x)N single layer structure, wherein 0.03≤x≤
0.15, InxGa(1-x)N layers with a thickness of hx, 50nm≤hx≤200nm；Yellow light multiple quantum well layer is InzGa(1-z)N/InwGa(1-w)N
Periodic structure, wherein 0.2≤z≤0.4,0≤w≤0.15；The periodicity of yellow light multiple quantum well layer is m, InzGa(1-z)N layers of thickness
Degree is hz, InwGa(1-w)N layers with a thickness of hw, wherein 3≤m≤10,2nm≤hz≤ 3nm, 7nm≤hw≤20nm。
Positioned at preparation layer and yellow light multiple quantum well layer position the wimble structure of falling hexagonal in growth plane distribution density be ρ,
The wimble structure of falling hexagonal and growth plane intersect regular hexagon when to yellow light multiple quantum well layer top, and regular hexagon side length is L, wherein
1×108cm-2≤ρ≤1×1010cm-2, 50nm≤L≤200nm.Growth plane is (0001) face of GaN material system, six
Six conical surfaces of pyramidal structure are six faces of GaN material system { 10-11 } face race.Terminate to the growth of yellow light multiple quantum well layer
When, the wimble structure of falling hexagonal shows as down the cavity (as shown in Figure 2) of hexagonal pyramidal, above-mentioned cavity during growing p-type layer
It is filled and led up.
Substrate is silicon substrate (Si), Sapphire Substrate (Al2O3), silicon carbide substrates (SiC) or gallium nitride substrate (GaN) etc.
One of monocrystal material.
Present invention is characterized in that it is higher first to grow one layer of average In component before growing yellow light multiple quantum well layer 501
And thicker InxGa(1-x)N single layer structure preparation layer 401, to be answered suffered by significant relaxation yellow light multiple quantum well layer 501
Power obtains the yellow light multi-quantum well luminescence layer of high quality；Draw simultaneously in preparation layer 401 and 501 region of yellow light multiple quantum well layer
Enter the wimble structure of falling hexagonal 701, the injection efficiency in p-type carrier (hole) can be substantially improved, further promotes Yellow luminous two pole
The internal quantum efficiency of pipe.
Detailed description of the invention
Fig. 1 is the sectional view of InGaN base yellow light-emitting diode of the present invention；
Fig. 2 is the solid at the end of InGaN base yellow light-emitting diode structure growth to yellow light multiple quantum well layer of the present invention
Structure；
Fig. 3 is the vertical view at the end of InGaN base yellow light-emitting diode structure growth to yellow light multiple quantum well layer of the present invention
Figure；
Fig. 4 is the section at the end of InGaN base yellow light-emitting diode structure growth to yellow light multiple quantum well layer of the present invention
Figure；
Wherein, 101-substrate, 201-buffer layers, 301-n-layers, 401-preparation layers, 501-yellow light multiple quantum wells
Layer, 601-p-type layers, the 701-wimble structure of falling hexagonal.
Specific embodiment
Below with reference to embodiment and compares attached drawing 1 the present invention is described in further detail.
Embodiment 1:
As shown in Figure 1, a kind of InGaN base yellow light-emitting diode structure, substrate 101 uses silicon (Si) substrate, buffer layer
201 be AlN, and n-layer is to mix Si concentration 2 × 1018-5×1018cm-3GaN；Preparation layer 401 is In0.1Ga0.9N/GaN lamination knot
Structure, lamination period are 20, In0.1Ga0.9N thickness 5nm, GaN layer thickness 1nm；Yellow light multiple quantum well layer 501 is 5 periods
In0.28Ga0.72N/GaN periodic structure, wherein In0.28Ga0.72N trap thickness 2.7nm, GaN build thickness 13nm；P-type layer 601 is dense to mix Mg
Degree 1 × 1020cm-3GaN.
Such as Fig. 2, shown in 3,4, the density of the wimble structure of falling hexagonal 701 is 5 × 108cm-2-1×109cm-2, until yellow light Multiple-quantum
The wimble structure of falling hexagonal 701 and growth plane intersect regular hexagon when well layer 501 is pushed up, and regular hexagon side length is 100-150nm.
Embodiment 2:
As shown in Figure 1, a kind of InGaN base yellow light-emitting diode structure, substrate 101 uses sapphire (Al2O3) substrate,
Buffer layer 201 is low temperature GaN, and n-layer is to mix Si concentration 5 × 1018-1×1019cm-3GaN；Preparation layer 401 is
In0.05Ga0.95N/In0.02Ga0.98N laminated construction, lamination period are 30, In0.05Ga0.95N thickness 60nm, In0.02Ga0.98N thickness
15nm；Yellow light multiple quantum well layer 501 is the In in 10 periods0.3Ga0.7N/GaN periodic structure, wherein In0.3Ga0.7N trap is thick
2.5nm, GaN build thickness 15nm；P-type layer 601 is to mix Mg concentration 5 × 1019cm-3GaN.
Such as Fig. 2, shown in 3,4, the density of the wimble structure of falling hexagonal 701 is 2 × 108cm-2-5×108cm-2, until yellow light Multiple-quantum
The wimble structure of falling hexagonal 701 and growth plane intersect regular hexagon when well layer 501 is pushed up, and regular hexagon side length is 150-200nm.
Claims (4)
1. a kind of InGaN base yellow light-emitting diode structure, including substrate, be equipped with buffer layer on substrate, on the buffer layer according to
It is secondary to be equipped with n-layer, preparation layer, yellow light multiple quantum well layer and p-type layer, it is characterized in: in preparation layer and yellow light multiple quantum well layer
Between be equipped with upward opening the wimble structure of falling hexagonal；The preparation layer is InxGa(1-x)N single layer structure, wherein 0.03≤x≤0.15,
InxGa(1-x)N layers with a thickness of hx, 50nm≤hx≤200nm；Yellow light multiple quantum well layer is InzGa(1-z)N/InwGa(1-w)The N period
Structure, wherein 0.2≤z≤0.4,0≤w≤0.15；The periodicity of yellow light multiple quantum well layer is m, InzGa(1-z)N layers with a thickness of
hz, InwGa(1-w)N layers with a thickness of hw, wherein 3≤m≤10,2nm≤hz≤ 3nm, 7nm≤hw≤20nm。
2. InGaN base yellow light-emitting diode structure according to claim 1, it is characterised in that: be located at preparation layer and Huang
The wimble structure of falling hexagonal of light multiple quantum well layer position distribution density in growth plane is ρ, until falling when yellow light multiple quantum well layer top
Hexagonal wimble structure and growth plane intersect regular hexagon, and regular hexagon side length is L, wherein 1 × 108cm-2≤ρ≤1×1010
cm-2, 50nm≤L≤200nm.
3. InGaN base yellow light-emitting diode structure according to claim 1 or 2, it is characterised in that: growth plane is
(0001) face of GaN material system, six conical surfaces of the wimble structure of falling hexagonal are six faces of GaN material system { 10-11 } face race；
To the growth of yellow light multiple quantum well layer, the wimble structure of falling hexagonal shows as down the cavity of hexagonal pyramidal, in the mistake of growth p-type layer
Above-mentioned cavity is filled and led up in journey.
4. InGaN base yellow light-emitting diode structure according to claim 1, it is characterised in that: the substrate is silicon lining
One of bottom, Sapphire Substrate, silicon carbide substrates or gallium nitride substrate.
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| CN201611222884.0A CN106711300B (en) | 2016-12-27 | 2016-12-27 | A kind of InGaN base yellow light-emitting diode structure |
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| CN201611222884.0A CN106711300B (en) | 2016-12-27 | 2016-12-27 | A kind of InGaN base yellow light-emitting diode structure |
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| CN111244235B (en) * | 2020-01-15 | 2021-03-02 | 湘能华磊光电股份有限公司 | Preparation method of LED chip |
| CN116391266A (en) * | 2020-11-24 | 2023-07-04 | 苏州晶湛半导体有限公司 | Multi-wavelength LED structure and manufacturing method thereof |
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| CN105226149A (en) * | 2015-11-02 | 2016-01-06 | 厦门市三安光电科技有限公司 | A kind of LED epitaxial structure and manufacture method |
| CN105870286A (en) * | 2016-04-22 | 2016-08-17 | 南昌大学 | GaN-based light emitting diode (LED) epitaxial structure with V-pit multi-quantum well multi-wavelength and fabrication method thereof |
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| US8698163B2 (en) * | 2011-09-29 | 2014-04-15 | Toshiba Techno Center Inc. | P-type doping layers for use with light emitting devices |
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| CN105226149A (en) * | 2015-11-02 | 2016-01-06 | 厦门市三安光电科技有限公司 | A kind of LED epitaxial structure and manufacture method |
| CN105870286A (en) * | 2016-04-22 | 2016-08-17 | 南昌大学 | GaN-based light emitting diode (LED) epitaxial structure with V-pit multi-quantum well multi-wavelength and fabrication method thereof |
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